TW200530754A - Pattern forming process - Google Patents

Abstract

The object of the present invention is to provide pattern forming processes that may form permanent patterns such as a wiring pattern with high fineness and preciseness, and sufficient efficiency due to suppressing the image deformation formed on pattern forming materials. In order to attain the object, a pattern forming process is provided that comprises modulating a laser beam irradiated from a laser source, compensating the modulated laser beam, and exposing a photosensitive layer by the modulated and compensated laser beam, wherein the photosensitive layer is disposed on a support to form a pattern forming material, the modulating is performed by a laser modulator that comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and the compensating is performed by transmitting the modulated laser beam through plural microlenses each having a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portion, and the plural microlenses are arranged to a microlens array.

Description

200530754 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a pattern forming method, in which a laser beam modulated by a laser modulator (such as a spatial light modulator) images a pattern forming material, so The pattern forming material is exposed. [Prior Art] Exposure devices in which modulated light such as a spatial light modulator or a laser beam is guided to an imaging optical system to expose a pattern forming material have gradually become common. Generally speaking, this exposure device includes a spatial light modulator (which modulates incident light or laser beam depending on various control signals) equipped with a planar array of many imaging parts, and irradiates the laser beam to the spatial light modulator. Laser source of transformer, and imaging optical system for forming image on pattern forming material by modulated laser beam through spatial light modulator ("Shortening of Research and Application to Massproduction by Maskless Exposure" by Akito Ishikawa, Electronics Jisso Gijyutsu, Gicho

Published by Publishing & Advertising Co., Ltd., Vol. 18, No. 6, pp. 74-79 (2002); Japanese Patent Application Publication (jp-A) No. 2004_1244). Examples of the spatial light modulator include a liquid crystal display (LCD), a digital micromirror device (DM D), and the like. DMD refers to a mirror device with a flat array of many micromirrors as the imaging part that changes the reflection angle depending on the control signal. In an exposure device, it is often desired to enlarge an image projected onto a pattern forming material, and therefore a magnifying imaging optical system is used as an imaging optical system reflecting this demand. However, the method of only directing modulated light from the spatial light modulator to 200530754 into the magnifying imaging optical system resulted in magnifying the luminous flux from each imaging part of the spatial light modulator, resulting in pixel sharpness due to the pixels in the projection pattern. The disadvantage is that the size is enlarged and reduced. In order to solve this disadvantage, the aforementioned JP-A No. 2004-1 244 proposes an enlarged projection in which a first imaging optical device is placed on a path of a laser beam modulated by a spatial light modulator, and The lens array is disposed on the imaging surface of the first imaging optical device. Each of the microlenses corresponds to the imaging part of the spatial light modulator. The second imaging optical device is disposed on the path of the laser beam from the microlens array. The modulated light is used to image the pattern forming material or the screen, and the image is enlarged by the first and second imaging optical devices. In this proposal, when the size of the image projected onto the pattern forming material or the screen can be enlarged, the laser beam from each imaging part of the spatial light modulator is collected by the microlenses of the array; therefore, the projected image The drawing size or dot size is focused and reduced, resulting in higher image sharpness. In addition, an exposure device combining a DMD and a microlens array as a spatial light modulator has been proposed (see JP-A No. 2001-305663 patent). A similar device has also been proposed in which an opening (a microlens corresponding to the array) The perforated plate is arranged behind the micro lens array so that only the laser beam passing through the micro lens passes through this opening (see JP-A No. 200 1 -5 0062 8 patent). In these exposure devices, excluding incident laser beams from adjacent microlenses that do not correspond to each opening can increase the extinction ratio. However, these proposals suffer from the problem of distorting the image formed on the pattern forming material by using the laser beam collected by the microlenses of the array. This problem is particularly noticeable when using DMDs as spatial light modulators. 200530754 Therefore, a pattern forming method capable of forming a permanent pattern (such as a circuit pattern) having high precision and accuracy and sufficient efficiency due to suppression of image distortion formed on a pattern forming material has not yet been provided; This pattern forming method needs to be improved. [Summary of the Invention] An object of the present invention is to provide a pattern forming method capable of forming a permanent pattern (such as a circuit pattern) having high precision and accuracy and sufficient efficiency due to suppressing deformation of an image formed on a pattern forming material. This object can be achieved by the present invention. According to the present invention, a pattern forming method is provided, which includes modulating a laser beam irradiated from a laser light source, compensating the modulated laser beam, and exposing the photosensitive layer by modulating and compensating the laser beam, wherein The photosensitive layer is deposited on the support to form a patterning material. Modulation is performed by a laser modulator that includes a plurality of imaging parts that can each receive a laser beam and output the modulated laser light. It is performed by transmitting a modulated laser beam through a plurality of aspherical microlenses that can compensate for aberrations due to distortion of the output surface of the imaging part, and a plurality of microlenses are arranged into a microlens array. In this pattern forming method, the laser light source irradiates the laser beam toward the laser modulator, and the laser beam received by the plurality of imaging sections is modulated by irradiating the laser beam from the imaging section. The aberration caused by the distortion of the output surface of the imaging portion is compensated by transmitting the modulated laser beam through a plurality of microlenses, so the distortion of the image formed on the pattern forming material is effectively controlled. As a result, the exposure on the pattern forming material can be high-definition and accuracy, and the development of the photosensitive layer can result in a high-definition and precise pattern. 200530754 Preferably, the aspheric surface is a toric surface. The aspheric toric surface can effectively compensate for aberrations due to distortion of the output surface of the imaging part, and can effectively control the distortion of the image formed on the pattern forming material. As a result, the exposure on the pattern-forming material can be highly precise and precise, and the shadowing of the photosensitive layer can cause a fine and precise pattern in the barrel. Preferably, the laser modulator controls a portion of the plurality of imaging portions based on pattern information. Controlling one of the multiple imaging sections by viewing the project information can result in higher speed laser beam modulation. Preferably, the laser modulator is a spatial light modulator, and more preferably, the spatial light modulator is a digital micromirror device (DMD). Preferably, the exposure is performed by a laser beam transmitted through the aperture array. This can increase the extinction ratio by the exposure of the laser beam transmitted through the aperture array. As a result, the exposure on the pattern forming material can be highly precise and precise 'and the development of the photosensitive layer can result in a highly fine and accurate pattern. Preferably, this exposure is performed by moving the laser beam and the photosensitive layer relatively relatively simultaneously. This relatively moving the laser beam and the exposure of the photosensitive layer simultaneously can result in higher speed exposure. Preferably, the development of the photosensitive layer is performed after exposure, and the formation of a permanent pattern is performed after development. Preferably, the permanent pattern is a circuit pattern, and the permanent pattern is formed by at least one of an etching process and a plating process, which can result in a high-definition and precise circuit pattern. Preferably, the laser light source can illuminate two or more types of lasers together. Exposure to these two or more types of lasers may result in longer focal depth exposures. Results 200530754 The exposure on the fruit 'patterning material can be highly precise and precise, and the development of the photosensitive layer can result in high fine and precise patterns. Preferably, the laser light source includes a multi-laser, a multi-mode optical fiber, and a collecting optical system for collecting a laser beam of multi-gastric radiation into a multi-mode optical fiber. This configuration can result in deep focus exposures. As a result, the exposure on the pattern-forming material can be high-definition and accuracy, and the development of the photosensitive layer can result in a high-definition and precise pattern. Preferably, the photosensitive layer includes a binder, a polymerizable compound, and a photopolymerization initiator; preferably, the binder contains an acidic group; preferably, the binder contains a vinyl copolymer; and, more preferably, The pH of this binder is 70 to 250 mg KOH / g. Preferably, the polymerizable compound includes a monomer containing at least one of a urethane group and an aryl group. Preferably, the photopolymerization initiator comprises a member selected from the group consisting of a halogenated hydrocarbon derivative, a hexaarylimidazole, an oxime derivative, an organic peroxide, a sulfur compound, a ketone compound, an aromatic iron salt, a fluorenylphosphine oxide, and The metal complex compound 0 is preferably that the photosensitive layer includes 30 to 90% by mass of a binder, 5 to 60% by mass of a polymerizable compound, and 0.1 to .3% by mass of photopolymerization. Initiator; preferably, the thickness of the photosensitive layer is 1 to 100 microns. Preferably, the support body includes a synthetic resin and is transparent; preferably, the support body is elongated; preferably, the pattern forming material is an elongated shape formed by being rolled into a bundle shape. Preferably, a protective film is formed on the photosensitive layer of the pattern forming material. -10- 200530754 [Embodiment] (Pattern forming method) The pattern forming method according to the present invention includes an exposure step and other steps selected. [Exposure step] In the exposure step, a pattern forming method is provided, which includes a laser beam irradiated by a laser light source, and compensates the modulated laser light. The modulated and compensated laser beam exposes the photosensitive layer. A pattern forming material is formed on the support, and the modulation is performed by using a laser that includes multiple laser beams and outputs the modulated laser output imaging portion. The compensation is performed by transmitting the modulated laser beam through the multi imaging unit. The distortion of the output surface causes non-lens compensation to be implemented, and multiple microlenses are configured as a microlens array:-laser modulator-laser modulator is appropriately selected depending on the application, as long as it is imaging Part. Preferred examples of laser modulators include spatial light modulators. Specified examples of spatial light modulators include digital micromirror devices, microelectromechanical system-type spatial light modulators, PLZT elements, and chips; of which D M D is preferred. The laser modulator refers to the following diagram and exemplarily explains the DMD 50 as a mirror device of a photocell array (for example, 768) having a plurality of micromirrors 62 on the SRAM photocell 60 as shown in FIG. 1, where At the uppermost position of each micromirror as an imaging part of an imaging section, the micromirror 62 is supported by a pillar. And appropriately include modulation beams, and the light layer system can each receive a tunable modulator due to the small array of spherical surfaces. Includes multiple transformers. (DMD), and broken LCD or storage order, 1024 X copies. On the surface of the micromirror, a material (such as aluminum) having a higher reflectivity than -11- 200530754 is deposited. The reflectance of 62 is 90% or more; for example, the pitch of the longitudinal and width columns is 1 3.7 microns each. In addition, a silicon gate CMOS SRAM photocell 60 made of a conventional semiconductor memory is arranged under each micromirror via a hinge and a yoke. The mirror device is completely monolithic. In the SRAM photocell 60 in which the digital signal is written into the DMD 50, the micromirror 62 supported by the pillars faces the substrate on which the DMD 50 is arranged, and surrounds the soil α degrees which are the diagonals of the rotation axis, for example, 12 degrees. Figure 2 shows the situation where the micromirror 62 is tilted + α degrees in the on state, Figure 2B shows the situation where the micromirror 62 is tilted -α degrees in the off state. Therefore, the inclination angle of the micromirror 62 at the tilt angle DMD 50 of the imaging part of the DMD 50 in the imaging part of the DMD 50 is controlled by the viewing information to reflect the tilt of the micromirror 62 as shown in FIG. Incidentally, Fig. 1 exemplarily shows a part of the situation of DMD 50, in which the micromirror 62 is controlled at -α degree or + α degree. The controller 302 connected to 50 transmits the switching control of each micromirror 62. The optical absorption (not shown) is arranged on the path of the laser beam reflected by the micromirror 62 in the off state. Preferably, the case where the DMD 50 is slightly inclined to a predetermined angle with respect to the sub-scanning direction, for example, 0.1 to 5 degrees. Figure 3A does not include the scanning trajectory of reflected laser images or exposure light of each micromirror when DMD 50 is included; Figure 3B shows the scanning trajectory of reflected laser image or exposure light of each micromirror when DMD 50 is included. . In DMD50, match many micromirrors (for example, 1024 micromirror arrays, tilt I 2A to display the case qualification, and magnify the side of DMD receiver B to show the beam beam at 53). 200530754 is placed in the longer direction to form an array, and many arrays (for example, 7 5 6) are arranged in the shorter direction. Thus, by tilting the DMD 50 as shown in FIG. 3B, the scanning trajectory or line pitch P2 of the exposure beam 53 of each micromirror can be made smaller than the scanning trajectory or line pitch Pi of the exposure beam 53 without tilting the DMD 50. , So the resolution can be significantly improved. On the other hand, the tilt angle of the DMD 50 is small, and therefore, the scanning direction W2 when the DMD 50 is tilted is approximately the same as the scanning direction W 1 when D M D 50 is not tilted. The following explains the method of accelerating the modulation rate of the laser modulator (hereinafter referred to as "high-speed modulation"). . Preferably, the laser modulator can control the pattern information to control any imaging portion ("," ": 2 or greater) which is continuously arranged in the imaging portion and less than" η ". There is a limitation on the data processing rate of the radio modulator, and the modulation rate of each line is defined as being proportional to the number of imaging parts used. The modulation rate of each line can be continuously configured by using less than "η The high-speed modulation is explained with reference to the following figure. When the laser beam B is irradiated from the fiber array laser light source 66 to the DMD 50, the micromirror is in the on state of the DMD 50 The reflected laser beam is imaged on the pattern forming material 150 by the lenses 5 4, 5 8. Therefore, the laser beam irradiated from the fiber array laser light source is turned on or off by each imaging part, And the pattern forming material 150 is exposed in approximately the same number of imaging portion units or as the exposure area for the imaging portion of the DMD 50, 68. In addition, the pattern forming material is exposed on the platform 1 5 2 5 When feeding at a fixed rate, the scanner 162 The pattern forming material 15 is scanned in the direction opposite to the moving direction of the stage -13- 200530754, so as to form a strip-shaped exposure area 1 7 0 corresponding to each exposure head 16 6. In this example, the micromirror system is arranged at DMD 5 0 1 024 arrays in the main scanning direction and 76 8 arrays in the scanning direction, as shown in Figures 4A and 4 B. Among these micromirrors, a part of the micromirrors can be controlled and driven by the controller 302. For example, 1 024 X 25 6. In this control, a micromirror array arranged in the central area of the DMD 50 can be used, as shown in Figure 4A; or, a micromirror arranged in the edge area of the DMD 50 can be used. Array, as shown in Figure 4B. In addition, when the micromirror is partially damaged, the micromirror used can be appropriately changed depending on the situation, so that the unimpaired micromirror is used. Due to the data processing rate of DMD 50, Limitation, and the modulation rate of each line is defined as being proportional to the number of imaging parts used, and the use of the micromirror array results in a higher modulation rate per line. In addition, the exposure is continuous by the relative exposure area When moving the exposure head continuously, The scanning direction does not necessarily require the entire imaging part. The scanner 162 is used to scan the pattern forming material 15 times, and when the pattern forming material 15 is detected by the sensor 1 64, the stage 1 5 2 is along the guide. 1 5 8 returns to the original position at the top of the gate 1 60, and the platform 15 2 again moves along the guide 15 8 at a fixed rate from above the gate 16 to the bottom. For example, using the micromirror 7 6 8 The modulation rate can be doubled when using three or eight arrays out of three arrays compared to the use of all seven or eight arrays. In addition, in two or six out of seven or eight arrays using micromirrors The modulation rate can be tripled when compared to using all 768 arrays. -14- 200530754 As explained above, when DMD 50 has 1024 micromirror arrays in the main scanning direction and 768 micromirror arrays in the sub-scanning direction, compared to controlling and driving all micromirror arrays, the control and Driving part of the micromirror array can result in a higher modulation rate per row. Various angles on the reflective surface can be changed by various control signals, and when the substrate is longer in the specified direction than its vertical direction, in addition to controlling and driving part of the micromirror array, many of the micromirrors are arranged on the substrate in a flat array Shaped DMDs similarly increase the modulation rate. Preferably, the exposure is performed when the exposure laser and the thermal sensing layer are relatively moved; more preferably, the exposure is combined with the aforementioned high-speed modulation, so that the exposure can be performed at a higher rate in a shorter time. As shown in FIG. 5, the patterning material 150 may expose the entire surface by a single scan of the scanner 162 in the X direction; or, as shown in FIGS. 6A and 6B, the patterning material 150 may be scanned multiple times. Therefore, the pattern forming material 150 passes the scanner in the X direction! 6 2 scan, then move the scanner 162 one step in the Y direction, and then scan in the X direction, so that the entire surface is exposed. In this example, the scanner i 62 includes eighteen exposure heads 166; each exposure head includes a laser light source and a laser modulator. The exposure is performed on a part of the photosensitive layer, so that this part of the area is hardened ', and then the unhardened areas other than the part of the hardened area are removed in a later-described developing step, thereby forming a pattern. The patterning device including the laser modulator is exemplarily explained with reference to the following drawings. The patterning device including the laser modulator is equipped with a platform 152, which will -15-

200530754 The sheet-like pattern forming material i 50 is absorbed and retained on the surface. On the thick-plate worktable 156 supported by four feet 154, two guides 1 5 8 extending along the moving direction of the platform are arranged. The platform 1 is set such that the direction of elongation faces the direction of movement of the platform and is supported in such a manner that the guide 1 moves back and forth. The driving device is provided with a pattern forming device) to drive the platform 15 2 along the guide 15 8. A gate 160 is provided in the middle of the table 156, so that the gate 160 has a path of 1% 152. Each end of the gate 16 is fixed to the workbench. 5 6 Both sides of the scanner 1 6 2 are provided on one side of the gate 1 60, and multiple (for example, two test sensors 1 64 are provided on the opposite side of the gate 1 60). The front side and the rear side of the detection pattern are 1 50. The scanner 16 and the detection sensor 16 are placed on the gate 16 and fixedly arranged on the path of the platform 1 52. 162 and the detection sensor 164 are connected to a controller controlling the same as shown in Figs. 8 and 9B. The scanner 162 includes a plurality of (two) exposure heads 166, which are substantially "m columns x η rows" (Three X five) are arranged in an array. In this example, considering the width of the pattern material 150, four exposure heads 16 are arranged in the third row. In the "m" column and the "η" row The designated exposure head is shown as the exposure head i66mn. The exposure area 1 6 6 of the exposure head 1 6 8 is a square on the short side in the sub-scan square. Therefore, the exposure area 1 70 is formed in a belt corresponding to each exposure head 166 moving with the platform. Shape pattern forming material 15 °. The designated exposure area of the exposure head that should be in the “m” column and “η” line is shown as the field 168mn ○: surface, 5 2 series with 58 to be able to set (not Cross the platform I. Scanning will be carried out into materials and installed. 'Scanning (not shown as an example, for example; below the forming material will be moved to the length of 152 ′, and the next will be to the "exposure area-16- 200530754" As shown in Figures 9A and 9B, each exposure head in each line is arranged to have space in the line direction (space: (the longer side of the exposure area) X natural number; twice in this example), so that the strip exposure The area 1 70 is arranged so that there is no space in the vertical direction of the sub-scanning direction. Therefore, the non-exposed areas between the exposed areas 1 6 8 1 i and 1 6 8 12 in the first row can be exposed by exposing the second row. The area 16621 and the exposure area 16831 of the third column are exposed and exposed. Each of the exposure heads 166 to 166mn includes a digital micromirror device (DMD) 50 (available from US Texas Instruments Inc.) as the pattern information to modulate the incident laser beam Laser modulator or space light laser modulator, as shown in Figures 10 and 11. Connect each DMD 50 to the controller including the data processing part and the mirror control part 3 02, as shown in Figure 1. As shown in Figure 2. The data processing part of controller 3 02 is based on the input pattern information Generate control signals to control and drive the micromirrors in the control area of each exposure head 16 6. The control area is explained below. The mirror drive-control part is based on the control signal generated by the pattern information processing part, and presses each exposure head 1 6 6 Control the reflective surface angle of each micromirror of DMD 50. The control of reflective surface angle is explained below. On the incident laser side of DMD 50, a fiber array light source equipped with a laser irradiation part is arranged in this order 6 6 (where the illuminating end or emission position of the optical fiber is arranged in an array along the longer side of the corresponding exposure area 1 6 8), a lens system 67 that compensates the laser beam from the fiber array light source 66 and collects it on the DMD, and The reflected thunder beam passes through the lens system 67 toward the mirror 69 of the DMD 50. Figure 丨 〇 schematically shows the lens system 67. The lens system 67 includes a collection lens 7i that collects the laser beam B for illumination from the fiber array laser light source 66, and a rod-shaped optical integration inserted in the optical path of the laser through the collection lens 7 1-17-200530754. Device 72 (hereinafter referred to as "stick integration benefit"), and an imaging lens 74 arranged in front of the rod integrator 72 or on the side of the mirror 69, as shown in FIG. 11. The collecting lens 71, the rod integrator 72, and the imaging lens 74 enable the laser beam irradiated from the fiber array laser light source 66 to enter the DMD 50 to become an illumination flux of approximately parallel beams with uniform cross-section intensity. The shape and utility of the rod integrator are explained below. The laser beam B irradiated from the lens system 67 is reflected by the mirror 67, and is irradiated to the DMD 50 through total internal reflection 稜鏡 70 (not shown in Fig. 10). At the reflection side of the DMD 50, an imaging system is configured 51 causes the laser beam B reflected by the DMD 50 to be imaged on the pattern forming material 150. The imaging system 5 1 is equipped with a first lens system imaging system 5 2, 5 4, a second imaging lens system 57, 58, and a micro lens array 5 5 and an opening array 59 inserted between these imaging systems, as in the first 1 picture. A plurality of two-dimensional microlenses 5 5 a corresponding to each imaging portion of D M D 50 are arranged to form a micro lens array 55. In this example, driving d μ D 5 0 of 1 0 2 4 columns X 7 6 8 of 1 0 2 4 columns X 2 5 6 rows of micromirrors, so correspondingly 〇 2 4 columns X 2 5 6 lines. The arranged microlenses 5 5 a have a pitch of 41 μm in both the column and line directions. For example, the microlens 55a has a focal length of 0.19 mm and a numerical aperture (NA) of 0.11, and is formed of optical glass BK7. The shape of the microlenses is explained below. The laser beam B has a beam diameter of 41 m at the position of the micro lens 55a. The opening array 59 is formed by a plurality of openings 59a of the respective microlenses 55a of the corresponding microlens array 55. For example, the diameter of the opening 59a is 10 -18- 200530754 microns. The first imaging system forms D M D on the micro lens array 55 to form a magnified double image. The image formed by the second imaging system and projected through the array 55 becomes a 1.6 times magnified image. Therefore, the image is formed and projected on the pattern forming material ^^ to become an image. Incidentally, the “稜鏡 pair 73” is installed between the second imaging system | forming material 150; the color amount of the image on the weekly pattern forming material 150 which is moved up and down through the prism pair 7 3. In the nth case, the forming material 150 is fed in the direction of arrow F as the secondary scanning imaging part. The visible imaging part can be selected for the application provided by the laser beam set by the laser light source and can output the laser beam; for example, When an image pattern is formed according to the pattern forming method of the present invention, the imaging portion is a pixel, or when the laser is modulated, the imaging portion is a micromirror. g The number of imaging parts contained in the laser modulator can be selected depending on the application. 0 The adjustment of the imaging parts in the laser modulator can be used depending on the application; preferably, the imaging parts are arranged two-dimensionally, more preferably By grid. -Microlens array-The microlens array is appropriately selected depending on the application, and its condition is to compensate for the image plane caused by the strain on the surface illuminated by the imaging portion. The image of 50 is too micro lens DMD 5 0 is 4.8 times larger and pattern-shaped operation, you can choose the appropriate pattern as the shadow in the picture, the picture or the irradiation device! Including DMD and the appropriate selection of the appropriate sub-pattern as the aspherical lens -19- 200530754 The aspheric surface is appropriately selected depending on the application; for example, it is preferable that the aspheric surface is a toric surface. The above microlens array, aperture array, and imaging system are explained below with reference to the drawings. Figure 1 3 A is not equipped with DMD 50, laser light source 144 that irradiates the laser beam onto DMD 50, lens system or imaging optical system that magnifies and reflects the laser beam reflected by DMD 50 4 5 4 A microlens array 472 with a plurality of microlenses arranged at each imaging part corresponding to DMD 50, a microlens array 472 with a plurality of openings arranged at each microlens corresponding to the microlens array 472, and a laser beam passing through the openings for exposure. The lens system or the exposure heads of the imaging systems 480 and 482 on the surface 56. Figure 14 shows the flatness data of the reflective surface of the micromirror 62 of the DMD 50. In Fig. 14, the contour lines represent the same height of the reflective surface; the pitch of the contour lines is five nanometers. In FIG. 14, the X direction and the Υ direction are two diagonal directions of the micromirror 62, and the micromirror 62 rotates around a rotation axis extending in the Υ direction. 15A and 15B each show the height displacement of the micromirror 62 in the X and Υ directions. As shown in Figs. 14, 15A, and 15B, there is strain on the reflective surface of the micromirror 62, and particularly in the central region of the mirror, the strain in one diagonal direction (Υ direction) is greater than the other diagonal direction (X Direction). Therefore, the shape distortion problem may be caused at a position where the laser beam B is collected by the microlenses 55a of the microlens array 55. To prevent this problem, the microlenses 55a of the microlens array 55 have a special shape different from the prior art, as explained below. -20- 200530754. Figures 16A and 16B show the front and side shapes of all microlens arrays 55 in detail. In Figures 16 A and 16 B, the parts of the microlens array are shown in mm (millimeters). In the pattern forming method according to the present invention, the micromirrors of 1024 columns X 2 5 6 rows of the DMD 50 are driven as explained above; the micro lens array 55 corresponds to 1024 arrays in the length direction, and There are 256 arrays in the width direction. In FIG. 16A, the positions of the microlenses are shown as the "j" th row and the "k" th column. 17A and 17B each show the front shape and the side shape of one microlens ® 55a of the microlens array 55. FIG. 17A also shows the contours of the microlenses 55a. The end surface of each microlens 5 5 a on the irradiation side has an aspheric surface to compensate for the strain aberration of the reflective surface of the micromirror 62. In particular, the microlens 55a is a toric surface; the radius of curvature Rx in the optical X direction is -0.125 mm, and the radius of curvature Ry in the optical Y direction is -0.1 mm. Therefore, the collection of the laser beams B in the cross-sections parallel to the X and Y directions is approximately as shown in Figures 18A and 18B. That is, when comparing the X and Y directions, the micro lens 55a in the Y direction has a shorter radius of curvature and a shorter focal length I. Figures 19A, 19B, 19C, and 19D show simulations of the beam diameters near the focal point of the lens 5 5a in the shape shown above. For reference, the 'Nos. 20A, 20B, 20C, and 20D figures show similar simulations of microlenses with R X = R y =-0 · 1 mm. "Z" in the figure indicates the distance between the evaluation position of the focal direction of the micro lens 55a and the light irradiation surface of the micro lens 55a. The surface shape of the micro lens 5 5 a in this simulation can be calculated by the following equation: -21-200530754, C; Z2 + C272 • " l + sqrt (\-c ^ FTc / r2) In the above equation, Cx represents the X direction The radius of curvature (= 1 / Rx), Cy represents the radius of curvature (= i / Ry) in the Y direction, X represents the distance from the optical axis 0 in the X direction, and Y represents the distance from the optical axis 0 in the Y direction. From the comparison of the 19A to 19D images and the 20A to 20D images, it is clear that the toric surface is used as the micro lens 5 5 a (the cross section in the parallel Y direction has a shorter focal length than the cross section in the parallel X direction) The patterning method according to the present invention can reduce the beam shape strain near the collection position. Therefore, the image can be exposed on the pattern forming material 150 with high definition and no strain. Further, it is clear that the mode of the present invention shown in Figs. 19A to 19D can produce a wider area with a smaller beam diameter, that is, a longer focal depth. By the way, in contrast to the above, when a large or small strain occurs at the central region of the micromirror 62, a microlens having a focal length shorter than that of the parallel Y-direction cross-section in the cross-section in the parallel X direction can be used in Patterning® Material 150 exposes the image with high definition and no strain. The opening array 5 9 arranged near the collecting position of the micro lens array 55 is structured so that each opening 5 9 a receives only the laser beam passing through the corresponding micro lens 5 5 a. That is, the opening array 59 can provide openings which can ensure that light can be prevented from entering from the adjacent opening 5 5 a and can increase the extinction ratio. In fact, providing a smaller opening 5 9a diameter for the purpose shown above can provide the effect of reducing the beam shape strain at the collection position of the microlens 5 5a. However, this configuration inevitably increases the amount of light -22-200530754 obstructed by the opening array 59, resulting in lower light amount efficiency. In contrast, the non-spherical shape of the microlenses 5 5 a does not cause light obstruction, and thus results in maintaining high light quantity efficiency. In the pattern forming method according to the present invention, the microlenses 55a may be non-spherical of second order or higher order (e.g., fourth or sixth order). The use of higher aspheric surfaces results in higher beam shape accuracy. In the above mode, the end surface of the irradiated side of the micro lens 5 5 a is an aspheric surface or a toric surface; or, by forming one of the end surfaces as a spherical surface and the other surface as a cylindrical surface, a micro lens is provided in this way, substantially Can have similar effects. In addition, in the above mode, the microlenses 55a of the microlens array 55 are non-spherical to compensate for aberrations caused by the strain of the reflective surface of the microlens 62; or, by providing compensation for each microlens array, The refractive index distribution of aberrations caused by the strain on the reflective surface of the micromirror 62 can derive substantially the same effect. 22A and 22B illustrate this microlens 155a by way of example. Figures 22A and 2 2B each show the front shape and the side shape of the microlens 1 5 5 a. The entire shape of the micro β lens 155a is a flat plate, as shown in FIGS. 22A and 22B. The X and Y directions in FIGS. 22A and 22B have the same meanings as described above. Figures 23A and 23B each show the situation where the laser beam B is collected by the micro lens 1 5 5 a in a cross section parallel to the X and Y directions. The microlens 1 5 a shows a refractive index distribution in which the refractive index gradually increases from the optical axis 0 to the outward direction; the dotted lines in Figs. 23A and 23B indicate positions where the refractive index decreases from the optical axis 0 by a specific value. As shown in Figs. 2 3 A and 2 3 B, a comparison of a cross section in the parallel X direction and a cross section in the parallel Y direction 'is shown. The latter shows a rapid change in refractive index score -23- 200530754' and a shorter focal length. Therefore, a microlens array having this refractive index distribution can provide similar effects as the above-mentioned microlens array 55. In addition, a microlens having an aspheric surface as shown in FIGS. 17 and 18 can have this refractive index distribution, and Both the surface shape and the refractive index profile can compensate for aberrations due to strain on the reflective surface of the micromirror 62. In the above mode, the aberration caused by the strain of the reflective surface of the micromirror 62 is compensated in the DMD 50; similarly, in the pattern forming method according to the present invention using a spatial light modulator other than DMD®, the strain When appearing on the surface of the imaging portion of the spatial light modulator, it can compensate for possible aberrations due to strain and prevent beam shape strain. The above-mentioned imaging optical system is explained below. In the exposure head, when the laser beam is irradiated from the laser light source 144, the cross section of the illumination flux reflected to the on-direction of the DMD 50 is magnified by the lens system 454, 45 8 several times, for example, twice. The magnified laser beam is collected by the micro lenses of the micro lens array 472 corresponding to each imaging part of the DMD 50, and then transmitted through the corresponding openings of the opening array 476. By the lens system 480, 482, the laser beam passing through the opening is exposed on the exposure surface. In the imaging optical system, the laser beam reflected by the DMD 50 is magnified several times by the magnifying lenses 454 and 458, and is projected on the exposure surface 56. Therefore, the entire image area is enlarged. When the microlens array 472 and the opening array 4 7 6 are not configured, the size of the exposed area 4 6 8 will be projected to one drawing size or one point size of each beam spot BS on the exposure surface 56. Therefore, M TF (modulation Transfer function) The quality is reduced, which is a measure of sharpness at the exposed area -24- 200530754 • 4 6 8 as shown in Figure 1 3B. On the other hand, when the microlens array 472 and the opening array 476 are not arranged, the laser beam reflected by the DMD 50 is collected by the microlenses of the microlens array 472 corresponding to the imaging parts of the DMD 50. Therefore, the spot size of each beam spot BS can be reduced to a desired size, for example, 10 μm × 10 μm, even when the exposure area is enlarged, as shown in FIG. 13C, and MFT properties can be prevented. It is reduced and exposure can be performed with higher accuracy. Incidentally, the tilt of the exposure area 468 is caused by the DMD 50 tilted in order to exclude the space between the imaging parts. In addition, even when there is a beam thickness due to microlens aberrations, the beam shape can be arranged by an array of openings to form dots with a fixed size on the exposure surface 56, and by transmitting the beam through the openings provided for the respective imaging sections Array to prevent crosstalk between adjacent imaging sections. In addition, since the angle of the incident illumination flux from the lens 45 8 into the microlens array 4 7 2 becomes narrower, using a higher illumination laser light source as the $ laser light source 1 44 can prevent the illumination flux from adjoining The imaging part partially enters; that is, a higher extinction ratio can be achieved. -Other optical systems-In the pattern forming method according to the present invention, other optical systems may be combined, which are appropriately selected by a conventional system, for example, an optical system that compensates for the light amount distribution may be additionally used. The optical system that compensates the light quantity distribution changes the width of the illumination flux at each output position, so that the ratio of the width of the illumination flux in the peripheral region to the width of the illumination flux in the central region near the optical axis is higher on the output side than on the input side, so it is- 25- 200530754 'When the parallel illumination flux from the laser light source is irradiated to the DMD, the light amount distribution at the exposed surface is compensated to be approximately fixed. The optical system for compensating the light quantity distribution is explained below with reference to the following drawings. First explain the optical system in which the full width H0 and H1 of the illumination flux between the input illumination flux and the output illumination flux are the same, as shown in FIG. 24A. The part indicated by reference number 5 1, 5 2 in Fig. 2 A is an imaginary representation of the input surface and output surface of the optical system that compensates the light quantity distribution. In the optical system that compensates the light quantity distribution, it is assumed that the illumination flux width h0 of the illumination flux entering at the central region near the optical axis Z 1 ® and the illumination flux width of the illumination flux entering at the nearby peripheral region hi is the same (h0 = hl). The optical system that compensates the light quantity distribution generates laser beams h0, h1 with the same illumination flux on the illumination side, and is used to amplify the illumination flux width h0 of the input illumination flux at the central area, and to the contrary in the periphery Reduce the illumination flux width h 1 of the input illumination flux at the area. That is, this optical system generates an output illumination flux width h10 in the central region and an output illumination flux width h11 in the peripheral region, and is adjusted to h11 < hl0. In other words, the ratio of the width of the illumination flux, (the output flux width at the peripheral area) / (the output flux width at the center area), is less than the input ratio, that is, [hll / hlO] is less than (hl / h0 = l) or (hll / hl0 < l). Since the width of the illumination flux is changed, the illumination flux at the central area representing a higher light amount can be supplied to the peripheral region where the light amount is insufficient; therefore, the light amount distribution at the exposure surface is approximately uniform without reducing the utilization efficiency. The degree of uniformity is controlled so that the unevenness of the light amount in the effective area is 30% or less, for example, preferably 20% or less. -26- 200530754 When the illumination flux width of the input side and output side is completely changed, the operation and effect caused by the optical system that compensates the light quantity distribution are similar to those shown in 24A, 24B, and 24C. Fig. 24B shows a case where the entire optical flux beam H0 is reduced and the output becomes an optical flux beam H2 (H0 > H2). In this case, the optical system that compensates the light quantity distribution also tends to process the laser beam (where the input side illumination flux width h0 is the same as hi) to become the illumination flux width hlO at the central area larger than the peripheral area, and the output side illumination The measurement width h 1 1 is smaller than the central region. Considering the reduction ratio of the illumination flux, compared to the surrounding area, the optical system is used to reduce the reduction ratio of the input illumination flux at the central area, and compared to the central area, it is used to increase the reduction of the input illumination flux at the peripheral area. proportion. In this case, (output lighting flux width at the peripheral area) / (output lighting flux width at the center area) is also smaller than the input ratio, that is, [H11 / H10] is smaller than (hl / h0 = l) or (hll / hl0 < l). Fig. 24C illustrates a case where the full width h0 of the input side illumination flux is enlarged and the output becomes a width Η 3 (Η 0 < Η 3). In this case, the optical system that compensates the light quantity distribution ^ also tends to process the laser beam (where the input side illumination flux width ho and hi are the same) into the illumination flux width hl0 at the central area that is greater than the peripheral area, and the output side illumination The flux width h 1 1 is smaller than the central region. Considering the reduction ratio of the illumination flux, compared with the surrounding area, the optical system is used to increase the magnification ratio of the input illumination flux at the central area, and compared to the central area, it is used to reduce the amplification of the input illumination flux at the peripheral area. proportion. In this case, (output lighting flux width at the peripheral area) / (output lighting flux width at the center area) is also smaller than the input ratio, gp, -27- 200530754 • [HI 1 / H10] is less than (hl / h0 = l ) Or (hi l / hl0 < l). Therefore, the optical system that compensates the light quantity distribution changes the width of the illumination flux at each input position, and reduces the ratio of the output side (the output illumination flux width at the peripheral region) / (the output illumination flux width at the center region) compared to the input side. ); Therefore, a laser beam with the same illumination flux becomes a laser beam with a larger width of the illumination flux at the output side at the central region than at the peripheral region and an illumination flux at the peripheral region smaller than the central region. Due to this effect, the illumination flux at the central area can be supplied to the surrounding area, so the light quantity distribution is approximately uniform at the cross section of the illumination ® flux without reducing the utilization efficiency of the entire optical system. The following specifically explains the specific lens data of a combination lens pair of an optical system for compensating the light quantity distribution. In this discussion, lens data explaining the case where the light quantity distribution shows a Gaussian distribution at the cross section of the output illumination flux, such as the case where the laser light source is the above-mentioned laser array. In the case where a semiconductor laser is connected to the signal mode fiber output end, the light amount distribution of the output illumination flux from the fiber shows a Gaussian distribution. In addition, the pattern forming method according to the present invention can be applied to a situation where the amount of light near the central area is significantly larger than the amount of light in the surrounding area, for example, as if the core diameter of a multimode fiber is reduced & similar to a single mode fiber. situation. The important information of the lens is summarized in Table 1 below. Table 1 — Basic lens information Si η di Ni (surface number) (curvature radius) (surface distance) (refractive index) 01 aspherical 5.000 1.52811 02 〇〇50.000 03 〇〇7.000 1.52811 — 04 aspheric -28-200530754 * As shown in Table 1, a pair of combined lenses is formed by two rotationally symmetrical aspheric lenses. The lens surface is defined as that the input side surface of the first lens disposed at the light input side is the first surface; the opposite surface at the light input side is the second surface; the input side surface of the second lens disposed at the light input side is The third surface; and the opposite surface at the light input side is the fourth surface. The first and fourth surfaces are aspherical. In Table 1, "Si (surface number)" indicates the "i" th surface (i = 1-4), and "ri (radius of curvature)" indicates the radius of curvature ^ of the "i" th surface, di (surface distance ) Indicates the distance between the "i" th surface and the "i + 1" th surface. The unit of di (surface distance) is millimeter (mm). Ni (refractive index) represents the refractive index of an optical element including the "i" surface to light having a wavelength of 40 5 nm. In Table 2 below, the aspherical data of the first and fourth surfaces are summarized. Table 2 Aspheric data First surface Fourth surface C -1.4098 X l〇 · 2 -9.8 5 06 X IO · 3 K -4.2192-3.6 2 5 3 X 1 0 a 3-1.0027 X 1 〇-4-8.9 9 8 0 X 1 Ο'5 a4 3.0 5 9 1 X l〇 · 5 2.3 060 X 1 〇 · 5 a 5 -4.5 115 X 1 〇-7 -2.2 8 60 X ΙΟ · 6 a 6 -8.2819 X i〇- 9 8.766 1 X ΙΟ'8 a7 4.1 020 X 1 〇 · 12 4.402 8 X 1 0_10 a 8 1.22 3 1 X 1 〇_13 1.3 624 X 1 〇 · 12 a9 5.3 7 5 3 X l〇-i6 3.3 9 6 5 X ΙΟ · 15 al 0 1.6315Xl0-i8 7.4 8 2 3 X ΙΟ'18 The above aspheric data can be expressed by the following coefficients of equation (A) representing asphericity. _ C.P2 — 1 + small-κ-

(Λ) In the above formula (Α), the coefficient system is defined as follows: -29- 200530754-z: extending from a point on the aspheric surface of the height P (mm) on the optical axis to the aspheric convex tangent plane or the vertical optical axis plane Vertical length; P: distance from the optical axis (mm); K: conic coefficient; c: paraxial curvature (1 / r, r: paraxial curvature radius); ai: "i" th aspheric coefficient (i = 3 to 10). Fig. 26 shows the light quantity distribution of the illumination light obtained by one of the paired lenses shown in Tables 1 and 2. The abscissa indicates the distance from the optical axis, and the ordinate indicates ® the amount of light (%). Figure 25 shows the light amount distribution (Gaussian distribution) of the uncompensated illumination light. As is clear from Figs. 25 and 26, the compensation of the light amount distribution by the optical system compensation results in a substantially uniform light amount distribution that significantly exceeds that without compensation. Therefore, the uniform laser beam can achieve uniform exposure without reducing the optical utilization efficiency. -Optical irradiation device or laser light source-The optical irradiation device is appropriately selected depending on the application; examples thereof include extremely high pressure mercury lamps, xenon lamps, carbon arc lamps, halogen lamps, fluorescent tubes, LEDs, semiconductor lasers, and Other conventional laser light sources are also combinations of these devices. Of these devices, devices that can illuminate two or more types of light or laser are preferred. Examples of the light or laser beam radiated from the optical irradiation device or the laser light source include UV rays, visible light, X-rays, laser beams, and the like. Among them, the laser beam is better, and more preferably, it contains two or more types of laser beams (hereinafter sometimes referred to as “combined laser”). The wavelength of UV rays and visible light is preferably 300 to 1500 nm, more preferably 320 to 800 nm, and most preferably 330 to 650 nm. -30- 200530754 • The wavelength of the laser beam is preferably 200 to 1500 nm, more preferably 300 to 800 nm, still more preferably 330 to 500 nm, and most preferably 400 to 450 nm. As for a device for irradiating a combination laser, this device is preferably exemplified as including a plurality of laser irradiation devices, a multi-mode optical fiber, and a collection optical system that collects each laser beam and is connected to the multi-mode optical fiber. The device for irradiating a combination laser or fiber array laser light source is explained with reference to the following drawings. The B-fiber array laser light source 66 is equipped with a plurality of (for example, fourteen) laser modules 64, as shown in FIG. 27A. One end of each multi-mode optical fiber 30 is connected to each laser module 64. Connect the other end of each multi-mode fiber 30 to the fiber 31 with the same core diameter as the multi-mode fiber 30 and a smaller coating diameter than the multi-mode fiber 30. Specifically, as shown in FIG. 2B, the ends of the multi-mode optical fiber 31 at the opposite ends of the multi-mode optical fiber 30 are arranged into seven ends along the main scanning direction of the vertical sub-scanning direction, and the seven ends are arranged into Two columns, thus constituting the laser output section 6 8. The laser output portion 68 formed by the ends of the multi-mode optical fiber 31 is fixed by being inserted between two flat support plates 65, as shown in Fig. 27B. Preferably, in order to protect the output end surface, a transparent protective plate such as a glass plate is arranged on the output end surface of the multi-mode optical fiber 31. The output end surface of the multi-mode optical fiber 31 tends to carry dust and degrade due to its higher optical density; the above-mentioned protective plate can prevent dust from being deposited on the end surface and can prevent degradation. In this example, in order to arrange the optical fibers 31 with smaller cladding diameters into the array without gaps, stack the multimode optical fibers 30 in two contacts -31-200530754 _multimode fibers with larger cladding diameters 30, and the output end of the optical fiber 31 connected to the stacked multimode optical fiber 30 is inserted between the output ends of the two optical fibers 31 connected to the two multimode optical fibers 30 which are in contact with the larger cladding diameter. This optical fiber can be manufactured by concentrically connecting an optical fiber 31 having a length of 1 to 30 cm and a smaller coating diameter to a multi-mode optical fiber 30 having a larger coating diameter and a top end portion of the laser beam output side, for example, As shown in Figure 2-8. The two optical fibers are connected so that the input end surface of the optical fiber 31 is fused to the output end surface of the multi-mode optical fiber 30 so that the central axes of the two optical fibers are consistent. As mentioned above ®, the diameter of the core 3 1 a of the fiber 31 is the same as the diameter of the core 30 a of the multi-mode fiber 30. In addition, a shorter optical fiber manufactured by fusing a smaller-clad fiber to a shorter-length and larger-clad fiber can be connected to the output end of the multi-mode fiber through a ferrule, an optical connector, and the like. For example, when the optical fiber with a smaller coating diameter is partially damaged, it can be easily replaced by an output terminal in an attachable and detachable manner through a connector or the like, which advantageously results in lower maintenance costs of the exposed optical head . The optical fiber 31 is sometimes referred to as the "output end portion" of the multi-mode optical fiber 30. The multi-mode optical fiber 30 and the optical fiber 31 may be any of a segment-oriented optical fiber, a grating-oriented optical fiber, and a combination optical fiber. For example, a segmented guide fiber manufactured by Mitsubishi Cable Industries, Ltd. can be used. In one of the best modes according to the present invention, the multi-mode optical fiber 30 and the optical fiber 31 are segment-directed optical fibers; in the multi-mode optical fiber 30, the cladding diameter = 125 micrometers, the core diameter = 50 micrometers, and NA = 0 · 2. Transmittance = 99.5% or more (at the surface coating of the output end); and in the optical fiber 31, cladding straight -32- 200530754 diameter = 60 microns, core diameter = 50 microns, NA = 0.2. Laser beams in the infrared region generally decrease with the fiber coating diameter and increase propagation loss. Therefore, the proper coating diameter is usually defined by the long area of the laser beam. However, the shorter the wavelength, the smaller the propagation loss; In a laser beam with a wavelength of 40 5 nm irradiated by a GaN semiconductor laser, even when the cladding thickness (cladding diameter-core diameter) is propagated / 2 When the coating thickness of an infrared light beam with a wavelength of 800 nm is dry, or when the thickness of the infrared light with a propagation wavelength of 1.5 micrometers is about 1/4 of the coating thickness, the propagation loss does not increase significantly. Therefore, the cover diameter can be as small as 60 microns. Needless to say, the diameter of the optical fiber 31 should not be limited to 60 microns. The covering diameter of the fiber using the known fiber array laser light source is 125 microns; the smaller the diameter, the deeper the focal depth; therefore, the covering diameter of the multi-mode fiber is preferably 80 microns or less, more preferably 6 0 microns or less, still 40 microns or less. On the other hand, since the core diameter is appropriately less than 3 to 4 micrometers, the covering diameter of the optical fiber 31 is preferably 10 micrometers or the laser module 64 is composed of a combined laser light source or a fiber array laser. As shown. Group. The combined laser light source is configured by a plurality of (eg, seven) multi-mode or single-mode semiconductor lasers LD1, LD2, LD3, LD4, LD5, LD6, and collimating lens 11 on the heating zone 10 , 12, 13, 14, 15, 16, and 17, a collection of 20, and a multimode fiber 30. Needless to say, semiconductor lasers are not limited to seven. For example, regarding the coating diameter = 60 micrometers, the core increasing wave, such as a 1/2 beam, is better to cover the coating and straightening is better to a larger light source. The number of GaN LD7 lenses is set to 200530754 = 50. Nanometer, ΝΑ = 0 · 2 multi-mode fiber, can input up to 20 semi- ^ conductor lasers, so you can reduce the number of fibers and get the amount of light required by the exposure head.

GaN semiconductor lasers LD1 to LD7 have commonly collimated wavelengths, such as 405 nm, and commonly used maximum output ', for example, 100 milliwatts for multi-mode lasers and 30 milliwatts for single-mode lasers. The GaN semiconductor lasers LD1 to LD7 may be those having a collimated wavelength other than 405 nm, as long as it is within a wavelength of 350 to 450 nm. The β-combined laser light source is housed in a box-shaped package 40 having an upper opening and other optical components, as shown in Figs. 30 and 31. The package 40 is provided with a package lid 41 for closing the opening. After the pumping step and closing of the opening of the package 40 with the package cover 41, the introduction of a sealed gas generates a closed space or a sealed volume composed of the package 40 and the package cover 41, and the combined laser light source is configured in a sealed condition. Fix the base plate 4 2 to the bottom of the package 40; install the heating zone 10, the collection lens holder 45 that supports the collection lens 20, and the fiber holder 46 that supports the multi-mode optical fiber 30 input end on the base plate 42 On the surface. The multi-mode optical fiber 30 output end is extracted from the package through the opening provided at the wall of the package 40. A collimating lens holder 44 is attached to the side wall of the heating zone 10, thereby supporting the collimating lenses 11 to 17. An opening is provided at the wall of the package 40, and a line 47 for supplying driving power to the GaN semiconductor lasers LD1 to LD7 is guided to leave the package through the opening.

In Fig. 31, in order not to complicate the pattern excessively, among the plurality of GaN-34-200530754 'semiconductor lasers, only the GaN semiconductor laser LD7 is shown with a reference mark and only the collimator lens 1 is used in the plurality of collimators. 7 is displayed with a reference mark. Fig. 32 shows the previous state of the attachment portions of the collimating lenses 11 to 17. Each of the collimating lenses 11 to 17 is formed into a shape in which a region including an optical axis of an aspherical circular lens is cut into a long piece having a plurality of parallel planes. Long lenses can be manufactured by molding. The collimating lenses 11 to 17 are closely arranged in the direction of the emission points so that the elongation direction is aligned perpendicular to the emission points of the GaN semiconductors LD1 to LD7. ® On the other hand, as for the GaN semiconductor lasers LD1 to LD7, the following lasers are used, which include an active layer with an emission width of 2 micrometers. The divergence angle is 10 degrees in parallel and perpendicular to the active layer; In this case, each of the laser beams B1 to B7 is emitted. The GaN semiconductor laser to LD 7 series configuration allows the emission positions to be arranged in a row of parallel active layers. Therefore, the direction of the larger divergence angle of the laser beams B1 to B7 emitted from each emission position is consistent with the length direction of each collimator lens, and the divergence angle. The smaller direction is consistent with the width direction of each collimating lens ® Enter the long collimating lens 1 1 to 17. That is, regarding each collimator lens 1 17, the width is 1.1 mm and the length is 4.6 mm, and for the laser beams B1. To B7 entering the lens, the horizontal beam diameter is 0 m and the vertical direction is 2.6 mm. As for the length of each collimator lens, 11 to 17 points, Π = 3mm, NA = 0.6, and the lens pitch is set to 1.25mm, a collection lens 20 is formed by cutting a part of a circular lens with an optical axis and an aspheric surface. The placement makes the long film longer in the direction of collimation through i to 17 (that is, the horizontal direction), and it is shown in the vertical direction. The shape of the laser beam with collimation arrangement can make ^ 3 0 LD 1 〇 And hair shape, 1 to collimated 9 millimeters, focus 0 long film iii direction is shorter than -35- 200530754. As for the collecting lens, the focal length f2 = 23 mm and NA = 0.2. For example, the 'collecting lens 20 can be manufactured by molding resin or optical glass. In addition, since a high-illumination fiber array laser beam is used, it is arranged at the optical fiber output end of a combined laser light source for illuminating a D M D lighting device, and a pattern forming device having a higher output and a deeper focal depth can be obtained. In addition, 'the higher output of each fiber array laser beam can result in a smaller number of fiber array laser beams required for the necessary output, and lower patterning device costs. Furthermore,' the output diameter of the fiber output end is smaller than the input end The cladding diameter 'thus' the diameter at the emission position is further reduced, resulting in a higher fiber array laser light source illumination. As a result, a pattern forming apparatus having a deeper focal depth can be obtained. For example, even very high-resolution exposures can achieve sufficient focal point depth, making the beam diameter 1 micron or less and the resolution 0 · 1 micron or less, resulting in fast and accurate exposure. Therefore, this pattern forming device is suitable for thin film transistor (TFT) exposure requiring high resolution. The lighting device is not limited to a fiber array laser β beam equipped with a plurality of combined laser light sources; for example, a fiber array laser light source equipped with a fiber laser light source can be used and the 繊 dimensional laser light source is provided by a group of * An array of optical fiber structures for semiconductor laser output laser beams at ^ emission positions. In addition, as for the lighting device having multiple emission positions, a laser array including a plurality of (eg, seven) pointed semiconductor lasers L D1 to LD 7 arranged on the heating zone 100 can be used, such as the third Figure 3 shows. In addition, a porous laser 1 10 is known, which includes a plurality of (for example, five) emission positions 1 10a arranged in a specific direction, as shown in FIG. 34A. In the porous laser 1 10-36- 200530754 — compared with the arrangement of pointed semiconductor lasers, the emission positions are accurately aligned, so it can be easily combined from each emission position beam. As the deflection tends to produce a hole laser 1 1 0 in the laser as the number increases, the number of emission positions 11 0a is preferably related to the lighting device. The above-mentioned porous laser 1 1 (which is configured such that the porous laser 1 1 0 Arranged in the same direction as the spirits of each tip, as shown in Figure 3 4 B, the combination of laser light sources is not limited to the combination of multiple laser beams emitted from multiple Bs. For example, a bag can be used, three) The pointed porous laser light source at the emission position 1 10a is shown in FIG. The combined laser light 110, the multi-mode optical fiber 130, and the collecting lens 120. 110 can be a GaN laser with a collimation wavelength of 4 05 nanometers in the structure shown above. Each laser beam B emitted from a porous laser 110 11a is made of a collection lens multimode fiber 1 3 0 core 1 3 0 a in. Entering the nuclear 4 ® beam propagates inside the fiber and combines into a laser light. The laser beam B is connected to the multi-mode fiber 1 3 0. The multiple emission positions of the porous laser 1 1 0 are the same as the core diameter of the 1 3 0 and the core diameter of the used fiber 1 3 0 is about the same. The surface of the straight active layer of the convex lens will be enhanced by a rod lens from a porous laser 110. The laser light emitted by the device can be set at a higher size to generate five or less in the generation process. >, or a porous array, a laser light source at a radiation position 1 1 0 a. The pointed semiconductor laser includes a combination of multiple (for example, 1 1 0) laser sources with a porous laser, for example, a porous laser diode. Each of the multiple emission positions 1 2 0 collects and enters the lightning in two 130a. The beam can then be transmitted from the fiber by using the multi-mode fiber focal length and multi-mode. It is also used to collimate only the vertical output beam. -37- 200530754 — In addition, as shown in Figure 3 and 5 A combined laser light source having a laser array 140 uses a porous laser 110 equipped with multiple (for example, three) emission positions by combining multiple (for example, nine) porous lasers 1 1 0 to The same gap is formed on the heating zone Η 1. The porous laser 1 10 is arranged and fixed in the same direction as the emission position 1 1 0a of each tip. This combined laser light source is equipped with a laser array 1 40, Multiple lens arrays 1 1 4 arranged for each porous laser I 1 0, rod lenses 1 1 3 arranged between laser array 1 40 and ® lens array 1 1 4 and multi-mode optical fibers 1 3 0, and Collecting lens 1 2 0. The lens array 1 1 4 is equipped with a plurality of corresponding porous mines. In the structure shown above, the laser beams B emitted from the multiple emission positions II 〇a of the multiple porous lasers 110 are collected in a specific direction by the rod lens 113 and then borrowed. The microlenses of the microlens array 1 1 4 are parallelized. The parallel laser beam L is collected by the collection lens 1 2 0 and input into the core 1 3 0 a of the multi-mode optical fiber 1 3 0. Enter the core 1 3 0 a The medium laser beam propagates inside the fiber ^ and combines into a laser beam and then outputs from the fiber. An example of another combined laser light source is shown below. In this combined laser light source, the cross-section in the direction of the optical axis is L-shaped The heating zone 1 8 2 is installed on the rectangular heating zone 180, as shown in FIGS. 36A and 36B, and an enclosing space is formed between the two heating zones. On the upper surface of the L-shaped heating zone 1 8 2, where A plurality (for example, two) of multiple (for example, two) porous lasers 1 1 10 arranged in a plurality of (for example, five) emission positions are arranged and fixed in the same direction as the arrangement direction of each pointed emission position with the same gap therebetween. 200530754 * Provide recess on rectangular heating zone 1 8 0 Two) Porous lasers 1 1 0 are arranged to heat multiple porous lasers 1 1 0. A plurality of emission sites are arranged. The emission positions are arranged therein, and the same vertical surface disposed on the surface of the end emission positions is positioned on the porous lasers 1 1 0. The laser beam input 184 makes the collimating lens correspond to each tip. In the collimating lens array 184, the direction of each collimated ® beam showing a wider divergence angle or the width direction of the fast lens is the same as that of the laser beam. The space efficiency of forming the collimating lens array can increase the combined laser and reduce the number of parts, which advantageously results in a lower laser fiber 130 in the collimating lens array 1 84 and a combination of the multimode fiber 130 Collect lens 1 2 0. ^ #In the structure shown above, self-arranged at each emission position of the laser porous laser 11 〇 1 1 〇 a 平行 Parallelized by collimating lens array ′ The core 130 a of the multi-mode optical fiber 130 is collected through. The 7 beams propagate inside the fiber and are combined into a single laser. This combined laser light source can produce a high output power surface portion through a porous laser collimating lens array; multiple (for example, on the upper surface of area 180, A collimator lens array is arranged on (for example, five) and the laser tip on the heating area 182, the emission position is 1 10a, and the length direction of the array lens is consistent with the laser axis direction, and each collimation is small. The divergence of the direction of the divergence angle or the slow integration can increase the output power of the laser beam source, and the manufacturing cost. On the beam output side, a multi-mode input is configured to collect the laser beam and emit multiple beams on the area 1 80, 1 82. Each laser beam B is collected by a series of mirrors 1 2 0 and then entered into the nucleus; multiple arrangements of the laser beams in L ·, 1 3 0 a are then emitted from the optical fiber output (especially the rate light source. This combined laser beam -39 -200530754 source can constitute fiber array laser light source and fiber bundle laser light source, so it is suitable for fiber laser light source and constitutes the laser light source of the patterning device in the present invention. Incidentally, the laser module can be used by To shell It is constituted by surrounding each combined laser light source 'and pulling out the output end of the multi-mode optical fiber 130. In the above explanation, the fiber array laser light source with higher illumination is exemplified, among which the multi-mode of the combined laser light source The output end of the optical fiber is connected to another optical fiber with the same core diameter as the multimode optical fiber and the cladding diameter is smaller than the multimode optical fiber; or, for example, a cladding diameter of 125 microns, 80 microns, 60 microns, etc. can be used but the output A multi-mode optical fiber that is not connected to another optical fiber. The pattern forming method according to the present invention is further explained. As shown in FIG. 29, in each of the exposure heads 166 of the scanner 162, a self-constituting fiber array laser light source 6 6 The laser beams Bl, B2, B3, B4, B5, B6, and B7 corresponding to the collimating lenses 11 to 17 emitted by the G aN semiconductor lasers LD1 to LD7 of the combined laser light source are parallelized. The light beams B 1 to B 7 are collected by the collecting lens 20 and are emitted at the input end surface of the core 30 a of the multi-mode optical fiber 30. In this example, the collecting optical system is composed of collimating lenses 11 to 17 and a collecting lens 2 0 constitutes, and The combined optical system is composed of a collection optical system and a multi-mode optical fiber 30. That is, the laser beams B1 to B7 collected by the collection lens 20 enter the core 30a of the multi-mode optical fiber 30 and propagate inside the optical fiber to form a laser. Beam B is then output from fiber 3 1 connected at the output end of multimode fiber 30. -40- 200530754 In each laser module, the combined efficiency of laser beams B 1 to B 7 and multimode fiber 30 It is 0.85 and each output of the GaN semiconductor laser LD1 to 30 milliwatts. Each optical fiber arranged in an array can form a combined laser beam B of 180 milliwatts (= 30 milliwatts X 0.85 X 7). The output of the laser emitting part 6 of the array of six optical fibers 31 is 1 watt (= 180 mW x 6). The laser emitting part of the fiber array light source is arranged in a 6-8 series so that the clearer emission positions are aligned in the main scanning direction. The conventional fiber laser light source that connects a semiconductor laser beam to an optical fiber has a low output, because the required output cannot be achieved, unless many lasers are arranged in an array; a combined laser light source can produce a higher output , A lower number (for example) of combined laser light sources can produce the required output. For example, a conventional fiber in which a semiconductor laser and an optical fiber are connected generally uses a semiconductor laser with an output of about 30 milliwatts, and uses a core diameter of 50 micrometers, a coating diameter of 125 micrometers, and several chirp openings; Mode fiber is used as the fiber. Therefore, in order to obtain about 1 W (Watt output, 48 (8 X 6) multi-mode optical fibers are necessary; since the area of the emission is 0.62 square millimeters (0.675 mm X 0.925 mm), the illuminance of the emission section is 68. 1 · 6 X 1 〇6 (W / m 2) Illumination of each fiber is 3 · 2 X 1 0 6 (W / m 2). Conversely, the laser emitting device is a launchable combination laser Timeline multi-mode fiber can produce an output of about 1 watt. Since the area of the emission area in the laser emission 68 is 0.0081 square millimeters (0.325 millimeters 0 · 0 2 5 mm), the illuminance of the laser emission section 68 is 1 2 3: The type of light LD7, so the output is 约: Gao Zhaozhi Lei here, and the area from 5-middle, straight I 0.2 :), thunder, and, six-part meter X xlO6 -41-200530754 ' (Watts per square meter), which is equivalent to about 80 times the brightness of conventional devices. The illuminance of each optical fiber is 90 X 1 06 (W / m 2), which is equivalent to about 28 times the illuminance of conventional devices. The difference in the depth of focus between the conventional exposure head and the exposure head of the present invention is explained with reference to FIGS. 37A and 37B. For example, the diameter of the exposure head in the sub-scanning direction of the emission area of the beam-shaped fiber laser light source is 0.675 mm, and the diameter of the exposure head in the sub-scanning direction of the emission area of the fiber array laser light source is 0.25 mm. As shown in FIG. 37A, in the conventional exposure head, the emission area of the illumination device or the beam-shaped fiber laser light source 1 is better. Therefore, the angle of the laser beam entering the DMD 3 is larger, causing a larger entrance to the scanning surface. Laser beam angle of 5. Therefore, the 'beam diameter' tends to increase in the collection direction and cause deviation in the focus direction. On the other hand, as shown in FIG. 37B, the exposure head in the pattern forming device of the present invention has a smaller fiber array laser light source 66 emitting area diameter in the sub-scanning direction, and therefore enters DMD50 through the lens system 67. The smaller laser beam angle results in a smaller laser beam angle 'that is' a greater focal depth that enters the scanning surface 56. In this example, the diameter of the emission area in the sub-scanning direction is about 30 times the diameter of the prior art. Therefore, the focal depth corresponding to the limited diffraction can be obtained, which is suitable for the exposure of extremely small points. As the amount of light required by the exposure head becomes larger, the effect of the depth of focus becomes more significant. In this example, the size of an imaging portion projected on the exposed surface is 10 micrometers by 10 micrometers. The DMD is a reflective spatial light modulator; it is shown in the enlarged views in Figures 37A and 37B to explain the optical relationship. Connect the pattern information input of the W exposure pattern to the control of the DMD50 -42- 200530754, controller (not shown), and flash memory recorded in the controller. The pattern * information is the data representing the density of the imaging part of the constituent pixels in two numbers (ie, with or without a dot record). The platform 15 for absorbing pattern forming material 15 2 on the surface is borrowed by a device (not shown) along the guide member 15 8 at a fixed rate from the upstream of the gate 16 downstream. When the platform 15 2 passes under the gate 160, and when the pattern-forming material is detected at the gate 16 〇 detection sensor 16 4, the reading is sequentially performed in multiple lines by multiple lines. The pattern information recorded in the flash memory and the pattern information read by the base B data processing section generate a control number for each exposure head 1 6 6. Then, each micromirror of the DMD 50 is controlled by the switch of the exposure head 166 based on the generated control signal. When the laser beam from the fiber array laser light source 66 is irradiated on the DMD 50, the laser beam reflected by the micromirror of the DMD 50 in the on state is exposed by the lens system 54, 58 on the pattern forming material 15 Imaging on the surface. Therefore, the laser beam emitted from the fiber array laser light source 66 is controlled by each of the imaging parts, and the number of imaging parts or exposure areas 1 6 8 (the number is about the same as that used for the DMD 50 0 imaging part). The same) exposes the pattern forming material 150. In addition, by moving the patterning material 150 at a speed of 疋 with the stage 152, the patterning material 150 is scanned by the scanner 162 in the direction opposite to the direction of the stage movement, and each exposure head 166 forms a strip-shaped exposure area 170. [Adduct] The material to be exposed is appropriately selected without particular limitation as long as the material is a pattern forming material including a photosensitive layer. Preferably, the exposure is performed on a place where light is moved to the light area of the light area of the light area, and the light is fixed to the light area. This layer is a -43- 200530754 ^ substrate including a pattern forming material. < Pattern-forming material > The pattern-forming material may be appropriately selected depending on the application without particular limitation as long as this material includes a photosensitive layer on the support. The photosensitive layer may be appropriately selected from conventional pattern-forming materials without particular limitation; it is preferable that the photosensitive layer includes, for example, a binder, a polymerizable compound, a photopolymerization initiator, and other ingredients (if necessary). The number of laminated photosensitive layers may be appropriately selected without particular limitation; the number of laminated B layers may be one layer, or not less than two layers. -Binder- Preferably, the binder is swellable in an alkaline aqueous solution, and more preferably, the | binder is soluble in the alkaline aqueous solution. For example, a binder that is swellable or soluble in an alkaline aqueous solution is one having an acidic group. The acidic group is appropriately selected depending on the application without particular limitation; Examples J thereof include a carboxyl group, a sulfonic acid group, a phosphate group, and the like. Among these groups, a carboxyl group is preferred. Examples of the carboxyl group-containing adhesive include a carboxyl group-containing vinyl copolymer, a polyurethane resin, a polyamic acid resin, and a modified epoxy resin. Among these, carboxyl group-containing vinyl copolymers are preferred from the viewpoints of solubility in coating solvents, solubility in alkaline developers, synthetic energy Λ, and ease of adjusting film properties. A carboxyl-containing vinyl copolymer can be synthesized by copolymerizing at least (i) a carboxyl-containing vinyl polymer, and (ii) a monomer copolymerizable with a vinyl monomer. Examples of carboxyl group-containing vinyl polymers include (meth) acrylic acid, -44-200530754 ethyl basic acid, maleic acid, maleic acid monoester, fumaric acid, itaconic acid, Addition of crotonic acid, cinnamic acid, acrylic acid dimer, hydroxyl-containing monomer (such as 2-hydroxyethyl (meth) acrylate) and cyclic anhydride (such as maleic anhydride), acetic anhydride, and cyclohexyl Dicarboxylic acid anhydride and ω_residue-polycaprolactone mono (meth) acrylate. Among them, (meth) acrylic acid is particularly preferable from the viewpoints of copolymerization ability, cost, and solubility. In addition, as for the carboxyl precursor, anhydride-containing monomers such as maleic anhydride, itaconic anhydride, and citraconic anhydride can be used. ® copolymerizable monomers are appropriately selected depending on the application; examples include (meth) acrylates, crotonic acid esters, vinyl esters, maleic acid diesters, fumaric acid diesters, itaconic acid Diesters, (meth) acrylamide, vinyl ethers, vinyl alcohol esters, styrene, methacrylonitrile; heterocyclic compounds with substituted vinyl groups, such as vinylpyridine, vinylpyridine, and vinylcarbazole ; N-vinylformamide, N-vinylacetamide, N-vinylimidazole, vinylcaprolactone, 2-acrylamido-2-methylpropanesulfonic acid, phosphoric acid mono (2-propenyloxy) Ethyl ester), mono (1-methyl-2-propenyloxyethyl) phosphate, and B hS groups (such as fee-based formate, venyl, mineral amine, discretionary, and imine) Based) vinyl monomer. Examples of the (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate Ester, isobutyl (meth) acrylate, third butyl (meth) acrylate, n-hexyl (meth) acrylate, cyclohexyl (meth) acrylate, third butyl cyclohexyl (meth) acrylate , 2-ethylhexyl (meth) acrylate, tertiary -45-2005-30754 (meth) acrylate-octyl ester, dodecyl (meth) acrylate, (meth) propyl > ester, (methyl ) Acetyloxyethyl acrylate, (meth), 2-hydroxyethyl (meth) acrylate, (meth) propylene | ethyl, 2-ethoxyethyl (meth) acrylate, (methyl 2 -(2-methoxyethoxy) ethyl ester, hydroxypropyl (meth) acrylate, diphenylethylene diketone (meth) acrylate, diethylene (meth) acrylate, diethylene glycol monoethyl ether (Meth) diethylene glycol monophenyl ether (meth) acrylate, triethylene glycol®-based) acrylate, triethylene glycol monoethyl ether (methyl) Propylene glycol monomethyl ether (meth) acrylate, polyethylene glycol monoethyl acrylate, (meth) acrylic acid β-phenoxyethoxyethoxy polyethylene glycol (meth) acrylate, ( (Meth) propyl, dicyclopentenyloxyethyl (meth) acrylate, (methyltrifluoroethyl, octafluoropentyl (meth) acrylate, (methylfluorooctyl), (meth) acrylate Bromophenyl, and (methyl-bromophenoxyethyl.) Examples of crotonic acid esters include butyl crotonic acid and vinyl crotonic acid. Examples include vinyl acetate, vinyl propionate, vinyl methoxy Examples of acetate, maleic acid diester with ethyl benzoate include diethyl maleate and dibutyl maleate. Examples of maleate Examples include diethyl fumarate, diethyl fumarate and dibutyl fumarate. Examples of Iconate diesters include dimethyl iconate, phenyl octadecanoate, etc. -Methoxy) acrylic acid 3-phenoxy-2-diol monomethyl ether acrylate, monomethyl ether (formate, polyether (methyl) ester, nonyl Acid cyclopentyl two benzene) acrylic acid) acrylic per) acrylate, hexyl acrylate. Esters, ethyl methyl butyrate, maleic acid methyl ester, diethyl fumarate -46- 200530754 ^ and dibutyl iconate. Examples of (meth) acrylamide include (meth) acrylamide, methyl (meth) acrylamide, N-ethyl (meth) acrylamide, meth (meth) acrylamide, N- Isopropyl (meth) acrylamide, butyl (meth) acrylamine, N-tertiary butyl (meth) propane, N-cyclohexyl (meth) acrylamine, N- (2 -Methoxyethyl) () acrylamide, N, N-dimethyl (meth) acrylamide, N, N-di (meth) acrylamide, N-phenyl (meth) acryl Ammonium, N-digastric diketone (meth) acrylamide, (meth) acrylfluorenylmorpholine, and ketoacrylamide. Examples of styrene include styrene, methylstyrene, dimethylene, trimethylstyrene, ethylstyrene, isopropylstyrene, butylene, hydroxystyrene, methoxystyrene, butadiene Oxystyrene, oxystyrene, chlorostyrene, dichlorostyrene, bromostyrene, chlorostyrene; protective groups (such as t-Boc) based styrene that can be protected by acid substances; vinyl benzoate Methyl ester, and α-methylstyrene. Examples of vinyl ethers include methyl vinyl ether, butyl vinyl ether, hexene ether, and methoxyethyl vinyl ether. A method for synthesizing a functional group-containing vinyl monomer is, for example, addition reaction of an iso group with a mesogen or an amine group; specifically exemplified are an isocyanate-containing monomer and a hydroxyl-containing compound or a first or second amine Reaction between radical compounds, and addition reaction between monomers containing hydroxyl groups or monomers containing first or second amine groups and acid groups. Addition of N-N-propyl N-n-amine, methyl ethyl phenethyl dipropyl phenethyl acetophenone methyl hydroxyl cyanocyanate monocyano-47- 200530754 monomer containing isocyanate Examples include transformations represented by the following formulas (1) to (3)

HR1 C = C-C〇-NCO Formula (2) i Η

NCO formula (3) In the above formulae (1) to (3), R1 represents a hydrogen atom or a methyl group. Examples of the above-mentioned monoisocyanate include cyclohexyl isocyanate, n-butyl isocyanate, toluene isocyanate, diphenylethylene diketone isocyanate, and examples of monomers containing a hydroxyl group with benzene isocyanate include the following formula ( 4) The combination represented by (12)

Thing 0

Style ⑷ -48- 200530754

〇 -Η Formula (5)

Type ⑹ Type ⑺ Type (8) Type (9) Type ⑽

OH type (11)

Formula (12) In the above formulae (4) to (12), R1 represents a hydrogen atom or a methyl group, and "η" represents an integer of one or more. -49- 200530754 Examples of S hydroxyl compounds include alcohols such as methanol, ethanol, alcohol, isopropanol, n-butanol, second butanol, n-propanol, n-hexanol, h ethylhexanol: n-decanol 1 Dodecyl alcohol, n-octadecyl alcohol, cyclopentyl alcohol, hexyl, ethyl ketone alcohol, and phenyl ethanol; phenols, such as phenol, cresol, and naphthalene, and compounds containing additional substituents Examples include fluoroethanol, difluoroethanol, methoxyacetamidine, phenoxyethanol, chlorophenol, dichlorophenol, methoxyphenol, and ethoxylate.

Examples of the above-mentioned mono- or amine-containing monomers include vinyl diphenylethylene diketamine. Examples of the first or second amine-containing compound include alkylamines such as methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, second butylamine, thallium butylamine, hexylamine, 2-ethyl Hexylamine, decylamine, dodecylamine, octadecylamine, dimethylamine, monoethylamine, monobutylamine, and dioctylamine; cyclic alkylamines, such as cyclopentylamine and cyclohexylamine; aromatic compounds Amines, such as diphenylethylenedione amine and phenethylamine; arylamines, such as aniline, toluidine, xylylamine, and naphthylamine; combinations thereof, such as N-methyl-N-diphenylethylenedione amine; And substituted amines, such as trifluoroethylamine, hexafluoroisopropylamine, methoxyaniline, and methoxypropylamine. Examples of the copolymerizable monomer other than the above include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, diphenone (meth) acrylate, (meth) ) 2-ethylhexyl acrylate, styrene, chlorostyrene 'bromostyrene, and hydroxystyrene. The above copolymerizable monomers can be used alone or in combination. The above-mentioned vinyl copolymer can be prepared by copolymerizing appropriate monomers according to a conventional method; for example, a solution polymerization method can be used, which dissolves the monomers in an appropriate -50-200530754 Agent, thereby causing polymerization in a solvent; or a so-called emulsion polymerization method, which polymerizes the monomers under conditions in which the monomers are dispersed in an aqueous solvent, may be used. The solvent used in the solution polymerization method is appropriately selected depending on the solubility of the monomer, the obtained copolymer, and the like; examples of this solvent include methanol, ethanol, propanol, isopropanol, 1-methoxy-2-propanol, acetone , Methyl ethyl ketone, methyl isobutyl ketone, methoxypropyl acetate, ethyl lactate, ethyl acetate, acetonitrile, tetrahydrofuran, dimethylformamide, chloroform, and toluene. These solvents can be used individually or in combination. The above-mentioned radical polymerization initiator can be appropriately selected without particular limitation; examples thereof include azo compounds such as 2,2'-azofluorene (isobutyronitrile) (AIBN) and 2,2'-azofluorene ( 2,4'_dimethylpentamidine); peroxides, such as benzamyl peroxide; persulfates, such as potassium persulfate and ammonium persulfate. The content of the carboxyl copolymerizable compound in the above-mentioned vinyl copolymer may be appropriately selected without particular limitation; preferably, the content is 5 to 50 mol%, more preferably 10 to 40 mol%, and Still more preferably 15 to 35 mole%. When the content is less than 5 mol%, the developing power in the test solution may be insufficient, and when the content exceeds 50 mol%, the durability of the hardened portion or the imaging portion to the anti-developing liquid is insufficient. The molecular weight of the above carboxyl-containing adhesive can be appropriately selected without particular limitation; preferably, the weight average molecular weight is 2000 to 300,000, more preferably 4,000 to 150,000 °. When the weight average molecular weight is less than 2000, the film strength is likely to be insufficient. -51-200530754, and the process tends to be unstable, and at an average weight of 3 0 0 0 0, the developing power tends to decrease. The above carboxyl-containing adhesives can be used alone or in combination. This kind of combination of adhesives can be exemplified as two or more adhesives, two or more adhesives with different weight averages, and two or more adhesives with different degrees of dispersion in the aforementioned In carboxyl adhesives, some or all of the sexual substances are neutralized. In addition, this adhesive can be combined with different types of resins selected from the group of polyester resins, polyurethane resins, epoxy resins, and polyethylene gelatin. In addition, the aforementioned carboxyl-containing adhesive may be a resin soluble in an alkaline aqueous solution as described in Japanese Patent No. The content of the adhesive in the above-mentioned photosensitive layer may be appropriately restricted; the content is preferably 10 to 90% by mass to 80% by mass, and still more preferably 40 to 80% by mass. When the content is less than 10% by mass, the adhesion of the printed circuit board substrate (such as a copper laminate) in the alkali solution is significant, and when the content exceeds 90% by mass, the stability of the hardened film or the stretching period or Strength may be insufficient. The content of the binder may be appropriately selected according to the application, and the acid content of the binder may be appropriately combined with the content of other polymer binders as required; more preferably 70 to 250 mg KOH / g, more preferably 90 to 200], Still more preferred is 100 to 180 mg KOH / g. When the acid content is less than 70 mg KOH / g, the molecular weight of the developing force exceeds: two or more: viscosity with different copolymer f molecular weights. The carboxyl group can be selected by alkali resin, polyenol resin, No. 2873889 without special , More preferably, the 20 influence or the development of the shape tends to reduce the development of the radiation film is regarded as the total content of the adhesive. For this reason, acid KOH / g may be insufficient '-52- 200530754 — the analytical properties may be poor, or permanent patterns may not be accurately formed, such as circuit patterns, and when the acid is more than 250 mg KOH / g, The durability of the pattern against the developer and / or the adhesion property of the pattern tends to degrade, so it is impossible to form a permanent pattern accurately, such as a circuit pattern. < Polymerizable compound > The polymerizable compound may be appropriately selected without particular limitation; preferably, the polymerizable compound is a urethane-containing and / or aryl-containing monomer or oligomer; preferably For example, the polymerizable compound contains two or more types of polymerizable groups. Examples of the polymerizable group include ethylenically unsaturated bonds such as (meth) acrylfluorenyl, (meth) acrylfluorenyl, styryl, vinyl (eg, vinyl ester, vinyl ether), and allyl (Eg, allyl ether, allyl ester); and polymerizable cyclic ethers, such as epoxy and oxabutane. Of these, ethylene unsaturated bonds are preferred. -Urethane group-containing monomer-The above urethane group-containing monomer may be appropriately selected without particular limitation; examples thereof include Japanese Patent Application Publication (JP-B) No. 48-4 No. 1 708 ®, Japanese Patent Application Publication (JP-A) No. 5 1 -3 7 1 93, JP-B Nos. 5-50737, 7-7208, and JP-A Nos. 2001-154346, 2001- 3 No. 6476; in particular, it can be exemplified as an adduct of a polyisocyanate compound having two or more isocyanate groups in the molecule and a vinyl monomer having a hydroxyl group in the molecule. The polyisocyanate compound having two or more isocyanate groups in the above molecule includes diisocyanates such as dihexyl diisocyanate, trimethyl dihexyl diisocyanate, isophorone diisocyanate , Xylene diisocyanate, methyl-53-200530754 benzene diisocyanate, phenylene diisocyanate, norbornene diisocyanate, diphenylmethane diisocyanate 3,3'-dimethyl-4 , 4'-diphenyl esters; polyaddition products of these diisocyanates, wherein the polyaddition products are isocyanate at each end, such as diurea or isocyanurate methylurea; obtained with polyfunctional alcohols (such as trihydroxy Addition of methylpropane, isopentyl alcohol functional alcohol and ethylene oxide adduct. Vinyl monomers with hydroxyl groups in the above molecules include ® acid 2-hydroxyethyl ester, (meth) acrylic acid 2- Hydroxypropyl ester, 4-hydroxybutyl acid, diethylene glycol mono (meth) acrylate (meth) acrylate, tetraethylene glycol mono (meth) propylene glycol mono (meth) acrylate, polyethylene glycol Alcohol mono (methyl, dipropylene glycol mono (meth) acrylate, tripropylene glycol enoate, tetrapropylene glycol mono Meth) acrylate, octayl) acrylate, polypropylene glycol mono (meth) acrylate mono (meth) acrylate, tributylene glycol mono (meth) butylene glycol mono (meth) acrylate, octabutane Alcohol mono (ester, polybutylene glycol mono (meth) acrylate, trimethylol) acrylate, and isopentyl alcohol (meth) acrylate alkenyl monomers can be exemplified as two different alkylene oxides. Random or block copolymers of alcohol and propylene oxide) groups) acrylic ester component. Examples of the above-mentioned urethane group-containing monomers include compounds having an acidic ring, such as tri (methyl) isocyanurate, diisocyanate, diisocyanate, and difunctional alkyd acid groups; From diisocyanate and glycerol) or poly (meth) propylene (meth) propylene, triethylene glycol monoenoate, octaethyl) propane; (¾ester mono (methyl) propylene glycol mono (methyl ester) , Dibutylene glycol acrylate, tetramethacrylic acid propane (methyl. In addition, this ethyl (for example, if one end has (a with isocyanuric acid ethoxy ethoxy-54- 200530754) (Meth) acrylated isotricyanate, and tris (meth) acrylate of diethylene cyanide modified with ethylene oxide, wherein the compound represented by formula (i 3) or formula (1 4) From the viewpoint of radiating properties, it is particularly preferred to include compounds represented by at least formula (14). These compounds may be used alone or in combination.

Equation (13)

Formula (14) In Formulas (13) and (M), R1 to R3 each represent a hydrogen atom or a methyl group; \ to X3 represent epoxy alkyl groups, which may be the same or different from each other. Examples of the alkylene oxide group include ethylene oxide group, propylene oxide group, butylene oxide group, pentyl oxide group, hexane oxide group, and a random or block combination thereof. Among them, ethylene oxide group, propylene oxide group, butylene oxide group, and combinations thereof are preferred; and ethylene oxide group and propylene oxide group are more preferable. In the formulae (13) and (14), ml to m3 each represent an integer of 1 to 60, preferably 2 to 30, and more preferably 4 to 15. In formulae (13) and (14), each of Y1 and Y2 represents a divalent organic group having 2 to 30 carbon atoms, such as an alkylene group, an alkylene group, an alkylene group, an alkylene group, and a carbonyl group (-CO -), An oxygen atom, a sulfur atom, an imine group (-NH-), a substituted imine group in which a hydrogen atom on the imine group is replaced by a monovalent hydrocarbon group, a sulfonyl group (-S02-), and combinations thereof; Among them, the alkylene group, the alkylene group, and a combination thereof are preferably -55- 200530754 The above alkylene group may have a split-shape structure. Examples of the alkylene group include a methylene group, an alkylene group, and an alkylene group. Propyl / cfa, isopropyl, isobutyl, isobutyl

, Pendyl, pendyl, pendyl, trimethylhexyl, cyclohexyl, heptyl, octyl, its fine- * hexyl, hexanonyl, hexadecyl, hexadecyl ch5

-CH

CH2- a CH,

CHc CH, 〇2 is eleven carbon base, eighteen carbon base, and the base represented by the following formula.

Extenders may be substituted with a hydrocarbon group; examples of Extenders include Extenders, Extenders, Di-Extenders, Extenders, and the following groups. An example of the above combination is exemplified by xylylene. The above-mentioned radicals, aryls, and combinations thereof may further contain a substituent; examples of the substituent include a halogen atom, such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom; an aryl group; Ethoxy, ethoxy and 2-ethoxyethoxy; aryloxy, such as phenoxy, fluorenyl, such as ethenyl and propionyl; ethoxy, such as ethoxy and butyl Oxy; alkoxycarbonyl, such as methoxy and ethoxy; and aryloxy, such as phenoxy. In the formulae (13) and (14), "n" represents an integer of 3 to 6, and from the viewpoint of a feed that can be used to synthesize a polymerizable monomer, preferably "η" represents 3, 4 or 6 in the formula ( In 13) and (14), "η" represents an integer of 3 to 6; Z represents a linking group of η "valence (η = 3 to 6). Examples of Z include the following groups. F

-56- 200530754 'In the above formula, X4 represents an alkylene oxide; m4 represents an integer from 1 to 20; represents an integer from 3 to 6; and A represents an organic group having a valence of η "(n = 3 to 6). Examples of the above-mentioned organic group A include an η-valent aliphatic group, an η-valent aromatic group, and these groups and an alkylene group, an alkylene group, an alkylene group, an alkylene group, a carbonyl group, an oxygen atom, a sulfur atom, and an imine. Group, a substituted imine group in which a hydrogen atom on the imino group is replaced by a monovalent hydrocarbon group, and a combination with a sulfofluorenyl group (_S Ο 2-); more preferably an η-valent aliphatic group, an η-valent aromatic group, And combinations of these groups with alkylene, aryl, or ® oxygen atoms; particularly preferred are η-valent aliphatic groups, and combinations of η-valent aliphatic groups and alkylene or oxygen atoms. Carbon of A in the above-mentioned organic groups The number of atoms is preferably from 1 to 100, more preferably from 1 to 50, and most preferably from 3 to 30. The above η-valent aliphatic group may have a branched or ring structure. The number of carbon atoms in the aliphatic group is larger than The number is preferably from 1 to 30, more preferably from 1 to 20, and most preferably from 3 to 10. The number of carbon atoms in the above η-valent aromatic group is preferably from 6 to 100, and more preferably from 6 to 50, and The number is preferably 6 to 30. The η-valent aliphatic group and the η-valent aromatic group may further contain a substituent; examples of the substituent include a hydroxyl group, a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, and iodine Atoms; aryl groups; alkoxy groups, such as methoxy, ethoxy, and 2-ethoxyethoxy; aryloxy groups, such as phenoxy; fluorenyl groups, such as ethenyl and propionyl; fluorene Groups such as ethoxyl and butyryloxy; alkoxycarbonyls such as methoxycarbonyl and ethoxycarbonyl; and aryloxycarbonyls such as phenoxycarbonyl. The above alkylene groups may be branched or cyclic Structure. The number of carbon atoms -57-200530754 in the alkylene group is preferably from 1 to 18, and more preferably from 1 to 10. The above alkylene group may be further substituted with a hydrocarbon group. The number of carbon atoms in the alkylene group is larger than that in the alkylene group. It is preferably 6 to 18, and more preferably 6 to 10. The number of carbon atoms of the hydrocarbon group in the substituted imine group is preferably 1 to 18, and more preferably 1 to 10. The above organic group A preferred example of A is as follows.

—Yan 2 —CH2—G—CHg—CH3 —CH2— < pH2 -CH2 3H2—e—CH3 —CH2-e—CH2Br —ch2 —ch2 CH2—CH—CH2 CH3—CH2-CH2-CH—CH-CH2 -ch2 One CH £ ~ G—H One CH2 One? h2 —CH —H2

1 ^ 2- I CH2 * ~ CH2 ~ CH2—GH-CHg " 〇Η2ΧΓ ~ WLUn-k CH 「CH2-CH2-CH2 a-ch2 V- CH3-CH2 — ^-CH2 " _〇 ~~ CH2-3 ~ CHg-CH3 ~ ch2 One strict 2 〒H2— CH2—C—CHg—O—CH2—0—CH2 —ch2 ch2—

The compounds represented by the formulae (13) and (14) are specifically exemplified by the following formulae (15) to (37). -58- 200530754

〇

Ο

Equation (18) Equation (19)

Formula (21) -59- 200530754 R 〇

丨 2) 6—NHCOO 入 广 CONH— (CH2) e—meaning enter meaning— (GH 丨

(iH2) e-NHCOO 〇 式 Formula (22)

Equation (25)

-60- 200530754

Formula (30) -61-200530754

Equation (32)

-62- 200530754

An integer from 1 to 60; "1" represents an integer from 1 to 20; and R represents a hydrogen atom φ or a methyl group. -Aryl-containing monomer_ The above-mentioned aryl-containing monomer may be appropriately selected as long as the monomer contains an aryl group; examples of the aryl-containing monomer include at least one aryl-containing polyvalent alcohol compound, polyvalent Esters and amines of amine compounds and polyvalent amino alcohol compounds with at least one unsaturated carboxylic acid. Examples of the aryl group-containing polyvalent alcohol compound, polyvalent amine compound, and polyvalent amino alcohol compound include polystyrene oxide, xylene glycol, bis (β-hydroxyethoxy) benzene, 1,5-dihydroxy 1,2,3,4-tetrahydronaphthalene, 2,2-diphenyl- -63- 200530754 1,3-propanediol, hydroxybenzyl alcohol, hydroxyethylresorcinol, bphenyl-i, 2 -Ethylene glycol, 2,3,5,6-tetramethyl-p-xylene-OC, oc'-diol, i, i, 4,4-tetraphenyl-1,4-butanediol, 1 , 1,4,4-tetraphenyl-2-butane-1,4-diol,, -bi-naphthol, dihydroxyphenol, 1,1'-methylenebis-2-naphthol, i, 2,4-triol, biphenol, 2,2, -fluorene (4-hydroxyphenyl) butane, 1,1-fluorene (4-hydroxyphenyl) cyclohexane, fluorene (hydroxyphenyl) ) Methane, catechol, 4-chlororesorcinol, hydroquinone, hydroxybenzyl alcohol, methylhydroquinone, methylene-2,4,6-trihydroxybenzoate, fluoroglucosyl alcohol, gallicol , Resorcinol, a- (1-aminoethyl) -p-hydroxybenzyl alcohol, and 3-amino-4-hydroxyphenylphosphonium. In addition, xylene fluorene (meth) acrylamide; adducts of phenolic lacquer epoxy resin or epoxy propyl compounds (such as biphenol A diglycidyl ether) and α, Bu unsaturated carboxylic acid; Ester compounds of phthalic acid with 1,2,4-benzenetricarboxylic acid and hydroxyl-containing vinyl monomers; diallyl phthalate, triallyl 1,2,4-benzenetricarboxylic acid, benzenesulfonic acid Diallyl acid; cationic polymerizable monoethyl ether as polymerizable monomer, such as hydrazone A; epoxy compounds, such as hydrazone

Lacquer epoxy resin and difluoride A dipropylene oxide ether; ethyl green esters, such as diethyl phthalate, divinyl terephthalate, and divinylbenzene, 3-disulfonate; and benzene E-refined substances, such as monovinylbenzene, p-propylstyrene, and p-isopropene styrene, among which compounds represented by the following formula (38) are preferred. = ^ R4 / \ R5 -Ar2-^-X3 ^ -〇〇〇 Formula (38) m6 In the above formula (38), Han 4 and R5 each represent a hydrogen atom or an alkyl group. In the above formula 08), Xs and Xfi each represent an alkylene oxide group, and the alkylene oxide may be one kind or two or more kinds. Examples of the alkylene oxide group include an ethylene oxide group, a propylene oxide group, a butylene oxide group, an pentyl oxide group, a hexane oxide group, -64-200530754 and a random or block combination thereof. Among them, ethylene oxide group, propylene oxide flame retardant group, butylene oxide group, and combinations thereof are preferred; and ethylene oxide group and propylene oxide group are more preferable. In formula (38), m5 and m6 each represent 1 to 60, preferably 2 to 30, and more preferably an integer of 4 to 15. In formula (38), T represents a divalent linking group, such as methylene, ethylidene, MeCMe, CF3CCF3, CO, S02.

In formula (38), Ar1 and Ar2 each represent any group which may contain a substituted group. Examples of Al: 1 and Ar2 include phenylene and naphthyl; examples include alkyl, aryl, aralkyl , Halogen atom, combinations thereof. And substituted alkoxy groups, and

Examples of the above-mentioned aryl-containing monomer include 2,2_Λ [4_ (3_ (meth) propenyloxy-2-hydroxypropyl) phenyl] propane, 2,2_ 贰 [4 _ ((meth) propene 醯Oxyethoxy) phenyl] propane; in which the number of ethoxy groups substituted for a phenolic fluorene is 20 of 2,2_wei [4_ (((methyl) propyloxyethoxy) phenyl)]] , Such as 2,2. Dai [4_ ((meth) acrylic acid oxydiethoxy) phenyl] acetone, 2,2 [[(((methyl) propionic acid oxytethoxylate) Phenyl] phenyl] propionate, 2,2 礞 [4 _ ((methyl) propanyloxypentaethoxy) phenyl] propionate, 2,2_dai [4 _ ((methyl) propionic acid Xingyl decaethoxy) phenyl] propionate, 22-ϊΓ "Λ r, 贰 [4-(((meth) propenyloxypentadecylethoxy) phenyl] propene] propionate; 22 2,2- 贰[4_ ((Meth) acryloxypropoxy) phenyl] propane, 2'2 'in the number of substituted ethoxylates of one phenolic OH group is 2 to 20 [4-(( (Meth) acrylic acid_propoxy) phenyl] propane, such as 2,2,4 · ((meth) fluorenyloxy-65- 200530754 dipropoxy) phenyl] propane, 2,2 -贰 [4-((meth) acrylic alkoxytetrapropoxy) phenyl] propane, 2 2,2-[[(Meth) propenyloxypentapropoxy) phenyl] propane, 2,2-[[(Meth) propenyloxypentadecyloxy) phenyl] ] Propane, 2,2-pyrene [4-((meth) propenyloxypentadecyloxy) phenyl] propane; with polyethylene oxide backbone and polypropylene oxide backbone as ethers in one molecule Compounds at the position, such as those described in International Publication No. WO 0 1/9 8 8 3 2 and commercially available products BPE-2-0, BPE-5 0 0 and BPE-1000 (Shin-nakamura Chemical Co ·) ; And polymerizable compounds with polyethylene oxide backbone and polypropylene oxide backbone. In these compounds, the position obtained from biphenol A can be changed to the position obtained from biphenol F, biphenol S, etc. Polymerizable compounds of ethylene oxide backbone and polypropylene oxide backbone include adducts of biphenol and ethylene oxide or propylene oxide, and compounds having a hydroxyl group at the terminal, where the compound is formed as a multi-addition product In addition, this compound has isocyanate and polymerizable groups, such as ethyl 2-isocyanate (meth) acrylate, and α, α-dimethylvinyl diphenylethylene diketone isocyanate. Ester, etc.-Other polymerizable monomers-In the pattern forming method according to the present invention, the above-mentioned monomers having a urethane group or an aryl group can be used together within a range that does not make the characteristics of the pattern forming material. Polymerizable monomers other than. Examples of monomers other than monomers having a urethane group or an aromatic ring include unsaturated carboxylic acids such as acrylic acid, methacrylic acid, itaconic acid, crotonic acid, and isocrotonic acid. ) Esters with aliphatic polyvalent alcohols, and unsaturated carboxylic acids and polyvalent amines-66-200530754 (i) Propylene glycol (methyl glycol, decayl)) Propane (dodecenoic acid via cyclopropaneate) Acetate methyl glycolate) Tetrakis (diisoenolate). The aforementioned non-alkenoyl alkenyl group) propylene di (methylene diacrylate diacrylate) propylene glycol ester, oxypropane tris (methyl, triolane tri (, 1,4-) propylene saturated carboxylic acid and Mostly aliphatic, ethylene glycol bis (methyl polyethylene glycol bis (methacrylate, triethylene glycol) propylene) propylene di (methyl glycol alcohol di (meth) acrylate, radical) Examples of acrylates and nonadesters include (methacrylic acid esters having 2 to 18 acid esters such as diethylene glycol diyl) acrylate, tetraethylene di (meth) acrylate, and tetradecyl ethylene glycol di (methyl Purpose, with 2 to 18 diene's such as dipropylene glycol di (meth) acrylate, tetrapropylene glycol di (di (meth) acrylate; new ethylene oxide modified neopentyl glycol di modified neopentyl glycol Di (meth) yl) acrylate, trimethylolmethylpropane tri (meth) propylene meth) acrylate, 1,3-butanediol di (meth) acrylate, hexanediol di ( Methyl) alcohols (methacrylates, tripropylene glycol meth) acrylates, and pentanediol di (methyl) (Meth) acrylate, acrylate, trimethylolpropane di (meth) acryloxypropyl ether, trimethylol glycol di (meth) acrylate, 1,6-hexanediol di (acrylic acid) Ester, 1,4-cyclohexanedi (meth) acrylate, H4-butanetriol tri (meth) propylene, 1,5-pentanediol di (meth) acrylate, isopentaerythritol di (methyl) Propionic acid ester, isopentaerythritol tri (meth) acrylate, isopentaerythritol meth) acrylate, diisopentaerythritol penta (meth) acrylate, pentaerythritol hexa (meth) acrylate , Glucitol tri (meth) propyl, Glucitol tetra (meth) acrylate, Glucitol penta (methyl-67-200530754) acrylate, Glucitol hexa (meth) acrylate, Dimethyloldi Cyclopentane di (meth) acrylate, tricyclodecane di (meth) acrylate, trimethylolpropane di (meth) acrylate modified by neopentyl glycol; has ethylene glycol chain and propylene glycol chain At least one di (meth) acrylate of an alkanediol chain, as described in International Patent No. W 0 0 1/9 8 8 3 2 Compounds; tris (meth) acrylate with trimethylolpropane added to at least one of ethylene oxide and propylene oxide; polybutylene glycol di (meth) acrylate, glycerol di (meth) acrylate, Glycerin tri (meth) acrylate and xylenol di (meth) acrylate. Among the (meth) propionic acid esters mentioned above, ethylene glycol di (methyl) is preferred in terms of availability. Base) acrylate 'polyethylene glycol di (meth) propionate, propylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, having at least one of ethylene glycol chain and propylene glycol chain One (meth) propionic acid ester of alkanediol chain, three (meth) propionic acid trimethyl ester, isopropyltetraol tetra (meth) acrylate, isoprene tetraacrylate , Isopentaerythritol di (meth) bis-ester, diisopentaerythritol penta (meth) acrylate, diisopentaerythritol hexa (meth) acrylate, glycerol tri (meth) acrylate, Glycerol di (meth) acrylate, 丨, 3 _ propylene glycol di (meth) acrylate, 1,2,4-butanetriol (Meth) acrylate, i, 4-cyclohexanediol di (meth) propionate, 1,5-pentanediol di (meth) acrylate, neopentyl glycol di (meth) acrylic acid Ester, and the second (meth) propionic acid ester of the third acrylic resin with methyl epoxy resin. Examples of the above-mentioned esters of Ikonic acid and aliphatic polyvalent alcohol compounds (ie, Ikonate) include ethylene glycol diIconate, propylene glycol diIconate -68- 200530754-, 1,3- Butanediol di-econate, 1,4-butanediol di-econate, alcohol di-econate, isopentaerythritol di-econate, and glucose alcohol tetra-ester. Examples of the above-mentioned esters of crotonic acid and an aliphatic polyvalent alcohol compound (ie, croton) include ethylene glycol dicrotonate, butanediol dicroton, isopentaerythritol dicrotonate, and glucositol tetracrotonate ester. Examples of the above-mentioned esters of isocrotonic acid and an aliphatic polyvalent alcohol compound (ie, crotyl esters) include ethylene glycol diisocrotonate, isopentyl tetraol ® crotonate, and glucosyl tetraisocrotonate. Examples of the above-mentioned esters of maleic acid and an aliphatic polyvalent alcohol compound (ie, adipic acid esters) include ethylene glycol dimaleic acid ester, glycol dimaleic acid ester, isoprene Tetraol dimaleate, and sugar alcohol tetramaleate. The above-mentioned amines derived from polyvalent amine compounds and unsaturated carboxylic acids include methylene fluorene (meth) acryl fluorene, ethyl fluorene (methyl) fluorene, 1,6-hexyl fluorene (methyl ) Acrylamide, octylamine ($) acrylamide, diethylene glycol trisamine (meth) acrylamide, and ditriamine (meth) acrylamide. As for the above-mentioned polymerizable monomers, the following compounds may be additionally exemplified by adding an α, β-unsaturated carboxylic acid to an epoxy-group-containing compound, such as butanediol-1,4-dipropylene oxide Ether, cyclohexyl dimethanol propylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, dipropylene glycol oxypropyl ether, hexanediol diglycidyl ether, tricyclic methylpropane tricyclic ring Propylene isoprene tetraol glycidyl ether and glycerol triglycidyl ether; JP-A Diconic acid esters of diisocis-butyric acid diisobutyrate Sodium propylene methyl ethylene: Compound ether, — ^ Ether, polyester acrylate and polyester (meth) acrylate oligomers as described in the patents of 48- -69- 200530754 64183 and JP-B Nos. 49-43191 and 52-30490; polyfunctional acrylic acid Esters or methacrylates, such as those obtained from methacrylic epoxy compounds (such as butanediol-1,4-diglycidyl ether, cyclohexyl dimethanol glycidyl ether, diethylene glycol diglycidyl ether , Dipropylene glycol diglycidyl ether, hexanediol diglycidyl ether, trimethylolpropane triglycidyl ether, isopentaerythritol tetraglycidyl ether, and tricyclic glycerol Propyl ether) epoxy acrylate; photocurable monomers and oligomers described in Journal of Adhesion Society of Japan 'Vol. 20, No. 7, pp. 300-308 (1984); allyl Esters, such as diallyl phthalate, diallyl adipate, and diallyl malonate; diallylamine, such as diallylacetamide; cationically polymerizable divinyl ether, such as Butanediol-1,4-divinyl ether, cyclohexyl dimethanol divinyl ether, ethylene glycol divinyl ether, diethylene glycol divinyl ether, dipropylene glycol divinyl ether, hexanediol divinyl ether, trihydroxy Methylpropane trivinyl ether, isoprene tetraethylene ether, and glyceryl vinyl ether; epoxy compounds such as butanediol-1,4-diglycidyl ether, cyclohexyl dimethanol glycidyl ether, ethylene glycol Alcohol diglycidyl ether, diethylene glycol diglycidyl ether, dipropylene glycol diglycidyl ether, hexanediol diglycidyl ether, trimethylolpropane triglycidyl ether, isoprene tetraol Glycidyl ether, and glycerin triglycidyl ether; butylene oxide 'such as 1,4-fluorene [(3-ethyl-3-epoxybutylmethoxy) methyl] benzene and International Bulletin No. W 01 / 22165; compounds with two or more different types of ethylenically unsaturated double bonds, such as Ν-β-ethyl-β-methylpropionamine ethylpropionate, Ν , N-fluorene (β-methacryloxyethyl) propanamide, allyl methacrylate. -70- 200530754 'Examples of the above vinyl esters include vinyl succinate and vinyl adipate. These polyfunctional monomers or oligomers can be used alone or in combination. The above polymerizable monomers can be combined with a polymerizable compound having one polymerizable group in the molecule, that is, a monofunctional monomer. Examples of the monofunctional monomer include a compound exemplified as a raw material of the above-mentioned adhesive, a binary monofunctional monomer, such as a mono (meth) acrylic alkoxyalkyl ester, a monohydroxy alkyl ester, and γ-chloro-β -Hydroxypropyl-β'-methacryloxyethyl-o-orthoester, and JP-A Nos. 06-236031, JP-B Nos. 2746443 and 2 5480 16 and International Patent No. WO 00 / 5 25 The compound described in the 29 patent. The content of the polymerizable compound in the photosensitive layer is preferably 5 to 90% by mass, more preferably 15 to 60% by mass, and still more preferably 20 to 50% by mass. When the content is less than 5% by mass, the tensile strength of the stretched film may decrease, and when the content exceeds 90% by mass, the edge fusion during storage is insufficient and the problem of exudation may be induced. The content of the polyfunctional monomer having two or more polymerizable groups in the above-mentioned molecule is preferably 5 to 100% by mass, more preferably 20 to 100% by mass, and still more preferably 40 to 1 〇〇 ％。 Mass%. &lt; Photopolymerization initiator &gt; The photopolymerization initiator may be appropriately selected from those skilled in the art without particular limitation 'as long as it has the property of initiating polymerization; an initiator which is photosensitive to ultraviolet to visible light is preferred. Depending on the type of monomer, the initiator can be an active substance that generates free radicals due to the photosensitizer effect, or a substance that initiates cationic polymerization. Preferably, the photopolymerization initiator contains at least one molecular extinction coefficient in the range of about 300 to 800 nanometers, more preferably about 300 to 500 nanometers, which is about 50 M · 1 cm. Ingredients of 1. Examples of the photoinitiator include halogenated hydrocarbon derivatives (such as those with a three-stemmed trunk or an oxadiazole trunk), hexaaryl diimidazole, oxime derivatives, organic peroxides, sulfur compounds, ketone compounds, aromatic sulfonium salts, Fluorenylphosphine oxide, and ® metal complex. Among these compounds, from the viewpoints of the sensitivity of the photosensitive layer, self-stability, and the adhesion between the photosensitive layer and the substrate for printed wiring boards, halogenated hydrocarbon derivatives, oxime derivatives, ketone compounds, and hexaaryldiamines with a three-stemmed backbone are available. Imidazole compounds are preferred. Examples of hexaaryldiimidazole compounds include 2,2'-fluorene (2-chlorophenyl) -4,4 ', 5,5'-tetraphenyldiimidazole, 2,2'-fluorene (o-fluorophenyl) ) _ 4,4 ', 5,5'-tetraphenyldiimidazole, 2,2'-fluorene (o-bromophenyl) -4,4', 5,5'-tetraphenyldiimidazole, 2,2 , Fluorene (2,4-dichlorophenyl) -4,4 ', 5,5' · tetraphenyl ^ imidazole, 2,2, -fluorene (2-chlorophenyl) -4,4 ', 5 , 5'-tetra (3-methoxyphenyl) diimidazole, 2,2'-fluorene (2-chlorophenyl) -4,4 ', 5,5'-tetra (4-methoxyphenyl) ) I. miso-sat, 2,2'-dai (4-methoxybenzyl) -4,4,5,5-tetraphenyldiimidazole, 2,2, hydrazone (2,4-dichlorophenyl) ) -4,4 ', 5,5'-tetraphenyldiimidazole, 2,2, -fluorene (2-nitrophenyl) -4,4,5,5'-tetraphenyldiimidazole, 2 , 2, -fluorene (2-methylphenyl) -4,4,5,5,5-tetraphenyldiimidazole, 2,2, -fluorene (2-trifluoromethylphenyl) -4,4 , 5,5, tetraphenyldiimidazole, and compounds described in International Publication No. WO 00/5 2 5 2 9 patent. -72- 200530754 'The above hexaaryldiimidazole can be easily used, for example, Bulletin of the Chemical Society of Japan, 33, 5 6 5 (1960) and Journal of Organic Chemistry, 36, [16], 2262 (1971) Manufactured by the method described. Examples of halogenated hydrocarbon derivatives with a three-till trunk include Bulletin of the Chemical Society of Japan, Wakabayasi, 42, 2924 (1 969); British Patent No. 1 3 8 8 492; JP-A No. 5 3-1 3 3 Patent No. 42 8; German Patent No. 3 3 7024; Journal of Organic Chemistry by FC Schaefer et al., 29, 1 527 (1 964); JP-A Nos. 62-58241, 5-281728, and 5-34920 Patent No .; and the compound described in US Patent No. 4 2 1 2 976. Examples of the compound described in the above-mentioned Bulletin of the Chemical Society of Japan, 42, 2924 (1969) of Wakab ay asi include 2-phenyl-4,6-fluorene (trichloromethyl) -1,3,5- Sangen, 2- (4-chlorophenyl) -4,6-hydrazone (trichloromethyl) -1,3,5-trigen, 2- (4-tolyl) -4,6-hydrazone (tri (Chloromethyl) -1,3,5-trigon, 2- (4-methoxyphenyl) -4,6-hydrazone (trichloromethyl ^)-l, 3,5-trigon, 2- (2,4-dichlorophenyl) -4,6-hydrazone (trichloromethyl) -1,3,5-trigon, 2,4,6-ginseno (trichloromethyl) -1,3, 5-trigon, 2-methyl-4,6-fluorene (trichloromethyl) -1,3,5-trigon, 2-n-nonyl_4,6-fluorene (trichloromethyl) -1 , 3,5-three-cultivation, and 2- (〇6, <<, 0-trichloroethyl) -4,6-hydrazone (trichloromethyl) -1,3,5-three-cultivation. Examples of the compounds described in the aforementioned British Patent No. 1 3 8 8 4 9 2 include 2-phenethyltertyl-4,6-dai (trichloromethyl) -1,3,5-dioxane, 2- ( 4 -methylstyryl) -4,6-fluorene (trichloromethyl) -1,3,5-Sanken, 2- (4-methoxy-73- 200530754 * ylstyryl) -4, 6-fluorene (trichloromethyl) -1,3,5-triple, and 2- (4-methoxystyryl) -4-amino-6-trichloromethyl-1,3,5 -Sangen. Examples of the compounds described in the aforementioned JP-A No. 5 3-1 3 3 4 2 8 patent include 2- (4-methoxynaphthalene-1-yl) -4,6-fluorenetrichloromethyl-1 , 3,5 -trioxine, 2- (4-ethoxynaphthalene-1-yl) -4,6-fluorenetrichloromethyl_1,3,5-trigon, 2- [4- (2 -Ethoxyethyl) naphthalene-1-yl] -4,6-fluorenetrichloromethyl-l, 3,5-trigenol, 2- (4,7-dimethoxynaphthylfluorene-butyl) ) -4,6-fluorenetrichloromethyl-1,3,5-trigonol, and 2- (ethanenaphthacene-5-yl) -4,6-fluorenetrichloromethyl-1,3 , 5-three farming. Examples of the compounds described in the aforementioned German Patent No. 3 3 3 7 024 include 2- (4-styrylphenyl) -4,6-fluorene (trichloromethyl) -1,3,5-trigon, 2- (4- (4-methoxystyryl) phenyl) -4,6-fluorene (trichloromethyl) _ 1,3,5-triazine, 2- (1-naphthyl vinylene benzene Yl) -4,6-fluorene (trichloromethyl) -1,3,5-trigon, 2-chlorostyrylphenyl-4,6-fluorene (trichloromethyl) -1,3,5 -Sangen, 2- (4-thiophen-2-vinylphenyl) -4,6-fluorene (trichloromethyl) -1,3,5-trigen, 2- (4-thiophen-3- Vinylphenyl) -4,6- 贰 ^ (trichloromethyl) -1,3,5-Tri well, 2- (4-furan-2-vinylphenyl) -4,6 · 贰(Trichloromethyl) -1,3,5-Sangen, and (4-benzofuran-2-vinylphenyl) _4,6-fluorene (trichloromethyl) -1,3,5- Three farms. Examples of the compounds described in the above F.C.Schaefer et al. Journa 1 of Ο r gani c Chemistry, 29, 1 27 (1 964) include 2-methyl-4,6-fluorene ( Tribromomethyl) -1,3,5-Sanka, 2,4,6-san (tribromomethyl) -1,3,5-sanka, 2,4,6-san (Dibromomethyl) ) -1,3,5-trigeno, 2-amino-4-methyl-6-tribromomethyl-1,3,5-tribo, and 2-methoxy-4-methyl-6 --74- 200530754 'Trichloromethyl-1,3,5-trioxine. Examples of the compounds described in the aforementioned JP-A No. 6 2-5 8 24 1 include 2- (4-phenylethylphenyl) -4,6-fluorene (trichloromethyl) -1,3, 5-trigon, 2- (4-naphthyl-1-ethynylphenyl) -4,6-fluorene (trichloromethyl) -1,3,5-trigon, 2- (4- (4- Triethynyl) phenyl) -4,6-fluorene (trichloromethyl) -1,3,5-Sanken, 2- (4- (4-methoxyphenyl) ethynylphenyl) -4 , 6-fluorene (trichloromethyl) -1,3,5-Sanken, 2- (4- (4-isopropylphenylethynyl) phenyl) -4,6-fluorene (trichloromethyl ) -1,3,5-trioxine, and 2- (4- (® 4-ethylphenylethynyl) phenyl) -4,6-fluorene (trichloromethyl) -1,3,5_ Coax three. Examples of the compounds described in the aforementioned JP-A No. 5 -2 8 1 7 2 8 patent include 2- (4-trifluoromethylphenyl) -4,6-fluorene (trichloromethyl) -1,3 , 5-Sanken, 2- (2,6-difluorophenyl) -4,6-fluorene (trichloromethyl) -1,3,5-trioxane, 2- (2,6-dichlorobenzene) ) -4,6-fluorene (trichloromethyl) -1,3,5-trioxo, and 2- (2,6-dibromophenyl) -4,6-fluorene (trichloromethyl)- 1,3,5-three_. Examples of the compounds described in the above-mentioned JP-A No. 5-3,492,0 include 2,4-fluorene (trichloromethyl) -6- [4- (N, N-diethoxycarbonylamidoamine) -Bromo) -3-bromophenyl] -1,3,5-Sanken, trihalomethyl-s-Sanken compounds described in U.S. Patent No. 42 3 9 8 50, and 2,4,6 -Ginseng (trichloromethyl) -s-trioxine, and 2- (4-chlorophenyl) -4,6-ginseng (trichloromethyl) -s-sanken. Examples of the compounds described in the aforementioned U.S. Patent No. 42 1 2976 include compounds having an oxadiazole backbone such as 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2-trichloro Methyl-5- (4-chlorophenyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-oxadiazole, 2 -Trichloromethyl-5- (2-naphthalene-75-200530754yl) -1,3,4-fluorenediazole, 2-tribromomethyl-5-phenyl-1,3,4-fluorenediazole , 2-tribromomethyl-5- (2-naphthyl) -1,3,4-fluorenediazole, 2-trichloromethyl-5-styryl-1,3,4-fluorenediazole, 2-trichloromethyl-5- (4-chlorostyryl) -1,3,4-fluorenediazole, 2-trichloromethyl-5- (4-methoxystyryl) -1, 3,4-fluorenediazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-fluorenediazole, 2-trichloromethyl-5- (4-n-butylbenzene Vinyl) -1,3,4-fluorenediazole and 2-tribromomethyl-5-styryl-1,3,4-fluorenediazole. Examples of the above-mentioned derivatives include compounds represented by the following formulae (3 9) to (72) 200530754

CH3〇hQ &gt; N CH3CH3 JJ--N CH3 ch3

Equation (39) Equation (40)

PC4H9 CH3S- ^)

Equation (41) Equation (42)

ch3o- &lt; P &gt; Ρ〇ι2Η25

Formula (43) pC2H4〇C2H4OCH3 ch3s- &lt; Q &gt;

ch3s- &lt; P &gt;

och2 N II

oo2CH3

Equation (45) Equation (46)

pCH2C02CH3 Formula (47) ch3s pCH2C02C2H5 N y_, II / \ -JJ__κι r \ Formula (48) ch3sH〇 &gt; pCH2C02C4H9

Equation (49) -77- 200530754 pC2H4C02C2H5ch3s- &lt; P &gt; -UnMd Equation (50)

CH3S

OCH

3 och2co2ch2 N Plant 11 κ · Factory Type (51) Type (52)

Equation (55)

(57) -78- 200530754

Formula (58) 〇 \ r = N—〇—C—C2H5 t = \ \ Formula (60) 〇—C ^ ~ CH3

Type A (59)

N-0-0 S〇2

ch3 type (64)

弍 （65) -79- 200530754

(70) P &quot; CH3C6H4

R Formula (71) η-〇3Η7 Formula (72) p-CH3C6H4 Examples of the above ketone compounds include diphenyl ketone, 2-methyldiphenyl ketone 3-methyldiphenyl ketone, 4-methyldiphenyl Ketone, 4-methoxydiphenyl ketone 2-chlorodiphenyl ketone, 4-chlorodiphenyl ketone, 4-bromodiphenyl ketone, 2-carboxy-80- 200530754 ^ diphenyl ketone, 2 -Ethoxycarbonyldiphenyl ketone, diphenylketone tetracarboxylic acid and its tetramethyl ester, 4-methoxy-4'-dimethylaminodiphenyl ketone, 4,4'-dimethoxydi Phenyl ketone, 4-dimethylaminodiphenyl ketone, 4-dimethylaminoacetophenone, anthraquinone, 2-tert-butylanthraquinone, 2-methylanthraquinone, phenanthrenequinone, fluorene [1 | Ketone, 2-chlorothioxanthinone, 2,4-dimethylthiocarbone, 2,4-diethylthio Plij ketone, mango, acridone, benzoin; benzoin ether, such as benzoin methyl ether, benzoin Diethyl ether, benzoin propyl ether, benzoin isopropyl ether, and benzoin phenyl ether; benzyldimethylketal, acridone, chloroacridone, N-methylacridone, N-butylacridone, • With N-butylchloroacridone. Examples of metal complexes include fluorene (η5-2,4-cyclopentadien-1-yl) -fluorene (2,6-difluoro · 3- (1fluorene-pyrrole-1-yl) phenyl) titanium, η5-cyclopentadienyl-η6-cumyl iron (1 +)-hexafluorophosphate (1-), and JP-A 53-133 42 8, JP-B 57-1819 and 5 Compounds described in US Patent No. 7-6096, and US Patent No. 3 6 1 5 4 5 5. As for the photopolymerization initiator other than the above, the following are further exemplified: acridine derivatives such as 9-phenylacridine and 1,7-fluorene (9,9'-acridyl ^) heptane; polyhalogenated compounds , Such as carbon tetrabromide, phenyltribromo maple, and phenyltrichloromethanone; lavender, such as 3- (2-benzofuranyl) -7-diethylamine lavender, 3- (2-Benzofuranosyl) -7- (1-pyrrolidinyl) diethylamino-vanacin, 3-Benzofuranyl-7-diethylamino-vanacin, 3- (2- Methoxybenzyl) -7-diethylamino-Lavannin, 3- (4-dimethylaminobenzyl) -7-Diethylamino-Lavannin, 3,3'-carbonyl Samarium (5,7-di-n-propoxy humor), 3,3'-carbonyl hydrazone (7-diethylamino lavender), 3-benzyl methoxy lavender, 3- (2-furanyl) -7-diethylamino-lavender-81-200530754, 3- (4-diethylaminocinnamonyl) -7-diethylamino-lavender, 7-methyl ' Oxy-3- (3-pyridylcarbonyl) humulin, 3-benzylidene-5,7-dipropoxyhumulin, and 7-benzotriazol-2-ylhumulin, And JP-A Nos. 5- 1 9475, 7-27 1 028, 2002-3 63 206, 2002-3 63207, 2002-3 6 3 2 0 8, and 2 002-3 63 2 09 humectin compounds; amines, such as 4-dimethylaminobenzoic acid ethyl ester, 4- N-butyl dimethylaminobenzoate, phenethyl 4-dimethylaminobenzoate, 2-phthalimide 4-dimethylaminobenzoate, 2-methyl 4-dimethylaminobenzoate Propylene ethoxylate, pentyl hydrazone ^ (4-dimethylamino benzoate), phenethyl 3-dimethylamino benzoate, pentyl ester, 4-dimethylamino benzaldehyde , 2-chloro-4-dimethylaminobenzaldehyde, 4-dimethylaminobenzyl alcohol, ((4-dimethylaminobenzyl) acetate) ethyl acetate, 4-piperidineacetophenone, 4- Dimethylaminobenzoin, N, N-dimethyl-4-toluidine, N, N-diethyl-3-ethoxyaniline, tribenzylamine, dibenzylphenylamine, N-methylphenyl Benzylamine, 4-bromo_N, N-diethylaniline, and tri-dodecylamine; amino fluorescent yellow precursors, such as ODB and ODBII; colorless crystal violet; fluorenyl phosphine oxides, such as fluorene (2 , 4,6-trimethylbenzylidene) phenylphosphine oxide, 贰 (2,6-dimethylbenzylidene) _2,4,4-trimethylpentylphenylphosphine oxide , And LucirinTPO. In addition, as for other photopolymerization initiators, the following are exemplified as follows: · Adjacent polyketal compounds described in US Patent No. 2367660; ketol ether compounds described in US Patent No. 2448 8〗 8; US patents Alpha-hydrocarbon substituted aromatic keto alcohol compounds described in No. 2 7 2 2 5 1 2; polynuclear quinone compounds described in U.S. Pat. Nos. 3046127 and 2951758; JP-A No. 2002-229 1 94 Various substances, such as organic boron compounds, -82-200530754 free radical generators, triaryl salts (for example, salts with hexafluoroantimony or hexafluorophosphate ^), _ salts (for example, (phenylphenylthio) Diphenylene (effective cationic polymerization initiator)), and the amidine compounds described in International Publication No. WO 0 1/7 1 42 8 patent. These photopolymerization initiators can be used alone or in combination. The combination of two or more photopolymerization initiators may be, for example, a combination of a hexaaryl diimidazole compound and an amino ketone described in US Patent No. 3 5 4 9 3 6 7; JP-B No. 5 485 16 Combination of benzothiazole and trihalomethyl-s-triazine compound as described in No. 6; aromatic ketone compound (such as oxysulfur) and hydrogen donor substance (such as dialkylamine-based compound or phenol compound ); A combination of a hexaaryl diimidazole compound and a ferrocene; and a combination of humorin, ferrocene, and phenylglycine. The content of this photopolymerization initiator in the photosensitive layer is preferably 0.1 to 30% by mass, more preferably 0.5 to 20% by mass, and still more preferably 0.5 to 15% by mass. &lt; Other ingredients &gt; As for other ingredients, examples are sensitizers, thermal polymerization initiators, plasticizers, colorants, and colorants; in addition, other auxiliary agents can be used together, such as substrate surface adhesion promoters, pigments, and conductive materials. Granules, pastes, defoamers, flame retardants, leveling agents, stripping accelerators, antioxidants, perfumes, thermal crosslinkers, surface tension modifiers, chain transfer agents, etc. By properly incorporating these components, desired properties of the pattern forming material, such as time stability, photographic properties, developing properties, film properties, and the like can be obtained. -Photosensitizer- The photosensitizer can be appropriately selected from conventional substances without particular limitation; Photosensitizer-83- 200530754 * Examples of the agent include polynuclear aromatics such as osmium, northern and terphenyl; p-types such as fluorescent yellow , Eosin, erythrosin, rose red B, and rose red; anthocyanins, such as indigo cyanine, thiocarbonyl cyanine, and oxanthine cyanine; some anthocyanins, such as some anthocyanins and mineral Fractionated green, thiothiazines, such as osmium, methylene blue, and toluidine blue; Py, 定, 定, 定, 定, orange, chloroflavin, and ργ [[dingsulfonin; | quinones, such as anthraquinone; history Cardinals, such as skaline; Acridinones, such as acridone, chloroacridone, N-methylacridone, N-butylacridone, N-butylchloroacridone; Oxylides, such as 3- (2-benzofuranyl) -7-diethylamine lavender®, 3- (2-benzofuranyl) -7- (1-pyrrolidinyl) Oxalin, 3_benzofuranyl-7-diethylamine humulin, 3- (2-methoxybenzyl) -7-diethylamino humin, 3- (4- Dimethylamino benzamidine) _7_Diethylamino lavender, 3,3'-carbonyl fluorene (5,7-di-n-propoxy lavender) 3-Benzylfluorenyl-7-methoxyvannyl, 3- (2-furanfluorenyl) -7-diethylaminovannin, 3- (4-diethylaminocinnamonyl)- 7-diethylamino humulin, 7-methoxy-3 (3-pyridylcarbonyl) humulin, 3-benzyl-5,7-dipropoxy humin, and JP -A No. 5-1 9475, 7-27 1 028, 2002-363206 &gt; 2002-363207, 2002-363208, and humectin compounds described in 2002-363209. As for the combination of a photopolymerization initiator and a photosensitizer, an initiation mechanism involving electron transfer can be exemplified as (1) an electron pre-initiator and a photosensitizer dye, (2) an electron acceptor initiator and a photosensitizer dye, and (3 ) The combination of an electron donor initiator and an electron acceptor initiator with a photosensitizer dye (ternary structure), as described in JP-A No. 2001-305734. The content of the photosensitizer is preferably -84- 200530754 ′ 0.05 to 30% by mass, and more preferably 0.1 to 20% by mass based on the entire composition of the photosensitive resin. To 10% by mass. When the content is less than 0.05% by mass, the activity may be decreased, the exposure procedure may take a longer time and tend to decrease, and when the content exceeds 30% by mass, it may precipitate from the photosensitive dye. -Thermal Polymerization Inhibitor-In order to prevent the polymerization inhibitor from being added to the photosensitive layer due to higher temperature or over time. Examples of thermal polymerization inhibitors include 4-methoxyj-based or aryl-substituted hydroquinone, third butyl catechol, pentadiphenyl ketone, 4-methoxy-2-hydroxydiphenyl ketone, chlorine Cox, chloroquinone, naphthylamine, β-naphthylamine, 2,6-di-methylene 2,2, -methylene-fluorene (4-methyl-6-tert-butylphenol), dinitrobenzene , Picric acid, 4-toluidine, reaction products of methylene mixture, methyl salicylate, chelating compounds of nitrosyl compounds and A1, etc. The content of the thermal polymerization inhibitor is preferably from 0.001 to 5% by mass, more preferably from 0.005 to 2 and even more preferably from 0.1 to 1% by mass in the photosensitive layer. When the content is less than 0, storage stability may be insufficient, and when the content exceeds 5, the sensitivity of sexual energy rays may be reduced. -Plasticizer- In order to adjust the film properties, that is, the flexibility of the photosensitive layer / 0, it is still better to be 0.2 sensitive to the energy ray, and the productivity is, the polymerization of the photosensitive agent during storage, thermal polymerization, hydroquinone, Magnesol, 2-hydroxylated cuprous acid, benzothia'yl-4-cresol, pyridine, nitrobenzene blue, copper and organic clamps, and nitroso compound polymer compounds are calculated in mass%, and still .001 At mass%, at mass%, it can be mixed with plastic-85-200530754, sex agent. Examples of the plasticizer include phthalates such as dimethyl phthalate, dibutyl phthalate, diisobutyl phthalate, diheptyl phthalate, dioctyl phthalate, dicyclohexyl phthalate, phthalate Di-tridecyl acid, butyl benzyl phthalate, diisodecyl phthalate, diphenyl phthalate, diallyl phthalate, and octyl octyl phthalate; glycol esters such as triethyl Diethylene glycol diacetate, tetraethylene glycol diacetate, dimethyl glycol phthalate, ethyl glycolate, ethyl glycolate, butyl glycolate, butyl glycolate , Triethylene glycol dicaprylate; phosphate esters, such as ^ tricresyl phosphate and triphenyl phosphate; amidoamines, such as 4-toluidineamine, benzylamine, N-n-butylammonamine And N-n-acetamidine; aliphatic dibasic acid esters, such as diisobutyl adipate, dioctyl adipate, dimethyl sebacate, dibutyl sebacate, sebacic acid Dioctyl ester and dibutyl maleate; triethyl citrate, tributyl citrate, triacetin, butyl laurate, 4,5-diepoxycyclohexyl-1, Dioctyl 2-dicarboxylate; and glycols such as polyethylene glycol and polypropylene glycol . The content of the aforementioned plasticizer is preferably from 0.1 to 50% by mass, more preferably from 0.5 to 40% by mass, and still more preferably from 1 to 30% by mass. -Colorant- The toner may be used to provide a visible image or provide developing properties to the above-mentioned photosensitive layer after exposure. Examples of the toner include amine triaryl methanes, such as ginseng (4-dimethylaminophenyl) methane (colorless crystal violet), ginseng (4-diethylaminophenyl) methane, ginseng (4-di Methylamino-2-methylphenyl) methane, ginseng (4-diethylamino-2-methylphenyl) methane, ginseng (4-dibutylaminophenyl)-[4- (2-cyano -86- 200530754 _ylethyl) methylaminophenyl] methane, and ginseng (4-dipropane; amine group D, such as 3,6-fluorene (diethylamino) _ 3 -amino group- 6-Dimethylamino-2-methyl-9- (o-chlorophenyl) koushans, such as 3,6-fluorene (diethylamino) -9- (2-ethoxythiosulfan 3,6-fluorenyl (dimethylamino) sulfur-drinking; amines 3 pyridines, such as 3,6--fluoren (diethylamino) -9,10-dihydro-3,6-fluoren (diethylamino) ) -9,10-dihydro-9-methylacridines, such as 3,7-fluorene (diethylamino) morphine; amine group 3,7-fluorene (diethylamino) morphine ; Aminodihydrogen (diethylamino) -5-hexyl-5, 10-dihydrophenone; Amine such as amidine (4-dimethylaminophenyl) aniline methane; Amine such as 4- Amino-4'-dimethylaminophenylmethane and 4-amino-α methyl picate; hydrazines, Such as 1- (2-naphthyl) phenyldihydroanthraquinones, such as 1,4-bis (ethylamino) -2,3-dihydroaniline, such as Ν, Ν-diethyl-p-phenylethyl Aniline; fluorenyl derivatives containing basic dyes, such as 10-ethylfluorenyl-3,7-fluorene® phenothiazone; no hydrogen oxidizable and oxidizable to colored compounds' such as reference (4 ·-— ^ Ethylamino-2-tolyl) ethoxy white dyes; such as U.S. Patent Nos. 3042515 and 304 2 517 which are converted into colored forms of organic amines, such as 4,4'-ethylenedi j N, N-dimethylaniline, 4,4'-methylenediamine triphenylamine, #azole. Among these colorants, such as the colorless crystal violet triaryl group, it is known that the above colorants can be combined with halogenated compounds to produce color. Aminophenyl) 9-Phenyl Pill and Kou Shan Chang; Aminothiocarbonylphenyl) S -9,10-dihydroacrylic 9-phenylacridine and: Aminophylline thiophene, such as, such as 3,7-fluorenylmethanes, hydrocinnamic acids, β-dicyanohydrocinnazine; amine-2,3-anthraquinone; phenylethyl nitro group free (dimethylamino) compounds It looks like colorless carbonyl methane; Oxygen, diphenylamine, | Ν -Acetylcarbamate is particularly good. From colorless -87- 200530754-Examples of this halogenated compound include halogenated hydrocarbons such as carbon tetrabromide, iodoform, ethylene bromide, dibromomethane, bromopentane, bromoisopentane, iodopentane, bromoisobutene , Iodobutane, diphenylmethyl bromide, hexachloromethane, 1,2-dibromoethane, 1,1,2,2-tetrabromoethane, 1,2-dibromo-1,1,2 -Trichloroethane, 1,2,3-tribromopropane, 1-bromo-4-chlorobutane, 1,2,3,4-tetrabromobutane, tetrachlorocyclopropene, hexachlorocyclopentadiene , Dibromocyclohexane, and 1,1,1_trichloro-2,2-fluorene (4-chlorophenyl) ethane; halogenated alcohol compounds, such as 2,2,2-trichloroethanol, tribromoethanol , 1,3-dichloro-2-propanol, 1,1,1-trichloro-2-propanol, bis (iododecylethyl) aminoisopropanol, tribromotributanol, and 2 , 2,3-trichlorobutane-1,4-diol; halogenated carbonyl compounds such as 1,1-dichloroacetone, 1,3-dichloroacetone, hexachloroacetone, hexabromoacetone, 1,1,3 1,3-tetrachloroacetone, 1,1,1-trichloroacetone, 3,4-dibromo-2-butanone, and 1,4-dichloro-2-butanone-dibromocyclohexanone; halogenated ethers Compounds such as 2-bromoethyl methyl ether, 2-bromoethyl ether Di (2-bromoethyl) ether and 1,2-dichloroethyl ether; halogenated ester compounds, such as ethyl bromoacetate, ethyl trichloroacetate, trichloroethyl trichloroacetate, and acrylic acid 2,3- Isomeric and copolymers of dibromopropyl ester, trichloroethyl dibromopropionate, and ethyl 1 α, β-dichloroacrylate; halogenated amine compounds, such as acetochlor, bromoacetamide, and dichloride Acetylamine, trichloroacetamide, tribromoacetamide, trichloroethyltrichloroacetamide, 2-bromoisopropylamine, 2,2,2-trichloropropanamide, N-chloroamber Amidine, and N-bromosuccinamine; compounds containing sulfur and / or phosphorus atoms, such as tribromomethylphenyl maple, 4-nitrophenyltribromomethyl maple, 4-chlorophenyltribromomethyl Base mill, ginseng phosphate (2,3-dibromopropyl), and 2,4-fluorene (tribromomethyl) -6-phenyltriazole. Among the organic halogenated compounds, those containing two or more halogen atoms -88- 200530754 * are preferably attached to one carbon atom, more preferably those having three halogen atoms are attached to one carbon atom. The organic halogenated compounds may be used alone or in combination. Of these halogenated compounds, tribromomethylphenylsulfonium and 2,4-fluoren (tribromomethyl) -6-phenyltriazole are preferred. The content of the colorant is preferably from 0.01 to 20% by mass, more preferably from 0.5 to 10% by mass, and still more preferably from 0.1 to 5% by mass based on the total components in the photosensitive layer. The content of the halogenated compound is preferably 0.001 to 5 mass%, more preferably 0.005 to 1 mass based on the total components in the photosensitive layer. / 0. • -Dye-To increase color for easy handling or to enhance storage stability, dyes can be incorporated into the above-mentioned photosensitive layer. Examples of dyes include bright green, eosin, ethyl violet, erythromycin B, methyl green, crystal violet, basic fuchsin, phenolphthalein, 1,3-diphenyl triphenol, alizarin red S, and ruephthalide , Methyl violet 2B, quinacridine red, rose red, m-amine yellow, stomathiophthalein, xylene blue, methyl orange, orange IV, diphenylthiocarbazide, 2,7-dichlorofluorescent yellow, P-methyl red, Congo red, phenylviolin 4B, α-naphthyl red, Nile Blue 2B, Nile Blue A, phenacetarin, methyl violet, cypress L, fin green, para magenta, oil blue # 603 (Orient Chemical Industry Co., Ltd.), Rose Red B, Rose Red 6G, and Victoria Pure Blue Beta. Among these dyes, cationic dyes such as malachite green oxalate and malachite green sulfate are preferred. Anionic pairs of cationic dyes can be residues of organic or inorganic acids such as bromic acid, iodic acid, sulfuric acid, phosphoric acid, oxalic acid, methanesulfonic acid, and toluenesulfonic acid. The content of the dye based on the total components in the photosensitive layer is preferably from 0.001 to 10-89-200530754 ^ mass%, more preferably from 0.001 to 5 mass%, and still more preferably from 0.1 to 2 quality%. -Adhesion promoter- In order to enhance the adhesion between the layers or the pattern forming material and the substrate, a so-called adhesion promoter can be used. Examples of the above-mentioned adhesion promoters include those described in JP-A Nos. 5- 1 1 43 9, 5-3 4 1 5 3 2 and 6-43 6 3 8; specified examples of the adhesion promoter include benzimidazole, Benzoxazole, benzothiazole, 2-fluorenylbenzimidazole, ® 2-fluorenylbenzoxazole, 2-fluorenylbenzothiazole, 3-morpholinylmethyl-1-phenyltriazole- 2-keto, 3-morpholinylmethyl-5 -fluorenediazole-2 -one, 5-amino-3 -morpholinylmethylthiadiazol-2-one, 2-fluorenyl-5-methyl Thiothiadiazole, triazole, tetrazole, benzotriazole, carboxybenzotriazole, amine-containing benzotriazole, and silane coupling agent. The content of the adhesion promoter is preferably 0.001 to 20% by mass, more preferably 0.01 to 10% by mass, and still more preferably 0.1 to 5% by mass based on the total components in the photosensitive layer. As described in "Light Sensitive Systems" by J. Curser, Chapter 5, the photosensitive layer may contain organic sulfur compounds, peroxides, redox compounds, azo or diazo compounds, photoreductive dyes, or organic halogen compounds. Examples of organic sulfur compounds include di-n-butyl disulfide, dibenzyl disulfide, 2-fluorenylbenzothiazole, 2-fluorenylbenzoxazole, thiophene, ethyl trichloromethanesulfonate, and 2- Fluorenyl benzimidazole. Examples of peroxides include di-n-butyl peroxide, benzamidine peroxide • 90-200530754 * and methyl ethyl ketone peroxide. The redox compound is a combination of peroxide and reducing agent, persulfate ion and ferrous ion, peroxide and iron ion, and the like. Examples of the above-mentioned azo or diazo compound include diazo salts such as α, ιazoazoisobutyronitrile, 2-azoamidin-2-methylbutyronitrile, and 4-aminodiphenylamine. Examples of the above-mentioned photoreductive dyes include rose red, erythromycin, eosin, acridine xanthophyll, riboflavin, and thiazepine. • -Surfactant- In order to improve the surface uniformity produced in the production of the pattern forming material of the present invention, a conventional surfactant can be used. The surfactant can be appropriately selected from an anionic surfactant, a cationic surfactant, a nonionic surfactant, an amphoteric surfactant, a surfactant-containing agent, and the like. The content of the surfactant is preferably 0.001 to 10% by mass based on the solid content of the photosensitive resin composition. When the content is less than 0.001% by mass, the effect of improving unevenness may be insufficient, and when the content exceeds 10% by mass, the adhesion may be deteriorated. In addition, as for the surfactant, the fluorine-containing polymer surfactant is preferably exemplified as having 40 mass% or more of fluorine atoms' having a carbon chain of 3 to carbon atoms, and having an aliphatic (wherein A hydrogen atom to the terminal to the first carbon atom is substituted with a fluorine atom) an acrylic or methacrylic acid copolymer. The thickness of the photosensitive layer can be appropriately selected without particular limitation; preferably, the fluorine content may be 20 ene-91-200530754 * This thickness is 1 to 100 microns, more preferably 2 to 50 microns, and even more preferably 4 Up to 30 microns. [Manufacture of pattern forming material] The pattern forming material of the present invention can be produced as follows. First, a solution of a photosensitive resin composition is prepared by dissolving, emulsifying, or dispersing various components or materials in water or a solvent. The solvent of the photosensitive resin composition solution can be appropriately used depending on the application. Examples of the solvent include alcohols such as ethanol, methanol, n-propanol, ®, n-butanol, second butanol, and n-hexanol; ketones such as acetone, methyl alcohol Methyl isobutyl ketone, cyclohexanone, and diisobutyl ketone; esters such as ethyl, butyl acetate, n-pentyl acetate, methyl sulfate, ethyl propionate, methyl ester, ethyl benzoate, and Methoxypropyl acetate; aromatic hydrocarbons benzene, xylene, benzene, and ethylbenzene; halogenated hydrocarbons, such as carbon tetrachloride, ethylene, chloroform, trichloroethane, methylene chloride, and monochlorobenzene, such as tetrahydrofuran , Diethyl ether, ethylene glycol monomethyl ether, ethylene glycol mono and 1-methoxy-2-propanol; dimethylformamide, dimethylacetamidine® methylmethylene maple, and cyclobutadiene. They can be used individually or in combination. In addition, it is conventional to add a surfactant to this solvent. A pattern-forming material can be manufactured by applying a solution of the photosensitive resin composition on a support and drying the light layer. The method for coating the photosensitive resin composition may be selected depending on the application; examples of the coating method include a spray method, a roll coating method, a rotary coating method, an extrusion coating method, a curtain coating method, a die coating method, and a gravure coating method. Method, coating method, and knife coating method. And still more from the top, and the choice, isopropyl alcohol ethyl ketone, acid ethyl phthalic acid di, such as methyl, trichloro; ether ether, amine, di, can be formed by selective coating method, wire rod coating -92- 200530754 — The drying conditions of the coating method usually depend on various ingredients, solvent species, and the amount of solvent; the temperature is generally 60 to 丨 丨 〇 and the time is 30 seconds to 15 minutes. &lt; &lt; Support and protective film &gt; The support is appropriately selected depending on the application; preferably, the support exhibits a peeling force to the photosensitive layer, and the support is highly transparent and has a high surface flatness. It is preferred that the support system is formed of a transparent synthetic resin; examples of the synthetic resin include polyethylene terephthalate, polyethylene naphthalate, triethylcellulose®, diethylcellulose, polyalkylmethacrylate Ester, Polymethacrylate Copolymer, Polyvinyl Chloride, Polyvinyl Alcohol, Polycarbonate, Polystyrene, Xerofan, Polyvinyl Chloride Copolymer, Polyamide, Polyimide, Vinyl Chloride-Acetic Acid Polyethylene terephthalate copolymer, polytetrafluoroethylene, polytrifluoroethylene, cellulose film, and nylon film; among these resins, polyethylene terephthalate is particularly good. These resins can be used alone or in combination. The thickness of the support can be appropriately selected depending on the application; preferably, the thickness is 2 to 150 microns, more preferably 5 to 100 microns, and still more preferably 8 to 50 microns. The shape of the support body is appropriately selected depending on the application; preferably, the shape is an elongate shape. For example, the length of the elongated support is selected from 10 to 20,000 meters. In the pattern forming material, a protective film may be provided on the photosensitive layer. The material of the protective film may be exemplified with respect to the above-mentioned support, and may also be paper, polyethylene, polypropylene laminated paper, or the like. Of these materials, polyethylene films and polypropylene films are preferred. The thickness of the protective film can be appropriately selected without particular limitation; preferably -93-200530754 ^, the thickness is 5 to 100 microns, more preferably 8 to 50 microns, and still more preferably 10 to 30 microns. In the application of the protective film, it is preferable that the adhesive strength A between the photosensitive layer and the support and the adhesive strength B between the photosensitive layer and the protective film indicate the following relationship: the adhesive strength A &gt; the adhesive strength B. The combination of a support and a protective film, that is, (support / protective film), exemplified as (polyethylene terephthalate / polypropylene), (polyvinyl chloride / saifan), (polyimide / poly Acrylic), and (Polyethylene terephthalate / Polyethylene terephthalate). In addition, the surface treatment of the support and / or the protective film can cause the above-mentioned adhesion strength relationship. The surface treatment of the support can be used to enhance the adhesion strength to the photosensitive layer; examples of surface treatments include undercoating deposition, corona discharge treatment, flame treatment, UV ray treatment, RF exposure treatment, glow discharge treatment, activated plasma treatment, And laser beam processing. The static friction coefficient between the support and the protective film is preferably 0.3 to 1.4, and more preferably 0.5 to 1.2. $ When the static friction coefficient is less than 0.3, due to too high sliding properties, the winding displacement can usually produce a bundle configuration, and when the static friction coefficient exceeds 1.4, it becomes difficult to roll the material into a bundle configuration. Preferably, the pattern forming material is wound around a cylindrical roll core and stored in a long bundle configuration. The length of the elongated pattern-forming material can be appropriately selected without particular limitation, and for example, the length is 10 to 2000 meters. In addition, for ease of handling at the time of use, the pattern forming material can be subjected to a notch treatment, and can be provided as a bundle configuration every 100 to 100 meters. Preferably, the pattern-forming material is wound so that the support body exists in the outermost layer of the bundle configuration. In addition, -94-200530754 cuts the patterning material into pieces. During storage, Extraordinarily provides a waterproof isolator with a desiccant at the end surface of the forming material to prevent edge fusion. Packaging is carried out with a higher waterproof material. In order to control the adhesive property between the protective film and the photosensitive layer, the surface is protected by protection. The surface treatment is performed, for example, by providing a primer layer of a polymer (such as polyorganosiloxane, fluorinated polyolefin, polyvinyl fluoride) on the surface of the protective film. The undercoat layer can be formed by polymerizing the surface of the protective film, and then drying the coating at 30 to 150 ° C ® and 50 to 120 ° C for 1 to 30 minutes. In addition to the support and the protective film, other layers such as a peeling layer, an adhesive absorption layer, and a surface protective layer can be provided. &lt; Substrate &gt; The substrate may be appropriately selected from commercially available materials, except that the highly smooth surface is an uneven surface. Preferably, the substrate is plate-shaped; in particular, it is selected from materials such as a printed wiring board (for example, a copper-plated plate), a glass plate (sodium glass), a synthetic resin film, paper, and a metal plate. The substrate is used by laminating the photosensitive layer of the pattern forming material on the substrate. In this configuration, the pattern may be subjected to a development step, for example, by exposing the photosensitive layer of the pattern forming material on the laminate to harden the exposed area. The pattern forming material of the present invention can be applied to a printed wiring board, a display member such as a tubular member, a rib member, a separator, and a piece; a hologram, a micromachine, and a sample piece. This pattern forming material is used in a pattern forming method according to the present invention. In the pattern, and for the surface of the film, ene, liquids, especially light layers, layers, and light, can be formed on the substrate, for example, to form sudden light, because the color filter distribution structure can also be -95-200530754. '[Other steps] Other steps, such as a development step, an etching step, and a plating step, may be appropriately performed by applying a conventional pattern forming step. These steps can be used alone or in combination. In the developing step, the photosensitive layer of the pattern forming material is exposed 'to harden the exposed area of the photoconductive layer, and then the unhardened area is removed, thereby producing a pattern. The method of removing the unhardened area can be appropriately selected without particular limitation ®; for example, the unhardened area can be removed by a developer. The developer is appropriately selected depending on the application; examples of the developer include an alkaline aqueous solution, an aqueous developing liquid, and an organic solvent; among them, a weakly alkaline aqueous solution is preferred. The basic components of the weakly alkaline aqueous solution are exemplified by lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium bicarbonate, sodium bicarbonate, potassium bicarbonate, sodium phosphate, potassium phosphate, coke Sodium phosphate, potassium pyrophosphate, and borax. Preferably, the weakly alkaline aqueous solution exhibits a pH of about 8 to 12, and more preferably about 9 ^ to 11. An example of this solution is an aqueous solution of sodium carbonate and potassium carbonate at a concentration of 0.1 to 5% by mass. The developer temperature may be appropriately selected depending on the developing power of the developer; for example, the developer temperature is about 25 to 40 ° C. This developer can be combined with surfactants and defoamers; organic bases, such as ethylenediamine, ethanolamine, tetramethylene ammonium hydroxide, diethylenetriamine, triethyleneethylenepentamine, morpholine, and triethanolamine; promote Organic solvents for development, such as alcohols, ketones, esters, ethers, amidines, and lactones. The above-mentioned developer may be an aqueous developer selected from the group consisting of an aqueous solution, an alkaline aqueous solution, and a combination solution of an aqueous solution and an organic solvent, or an organic developer. Etching can be performed by a method appropriately selected from conventional etching methods. The uranium etching liquid in the etching method is appropriately selected depending on the application; when the metal layer is formed of copper, it is exemplified by a copper chloride solution for uranium etching liquid, a ferric chloride solution, an alkaline etching solution, and a hydrogen peroxide solution. Among them, in terms of etching factors, a ferric chloride solution is preferred. The patterning material is etched and removed to form a permanent pattern on the substrate. The permanent pattern is appropriately selected depending on the application; for example, the pattern is a B-line. The electroplating step can be performed by a method selected from conventional electroplating treatment methods. Examples of the plating treatment include copper plating such as copper sulfate plating and copper pyrophosphate plating, welding plating such as high-gloss welding plating, nickel plating such as watt bath (nickel sulfate-nickel chloride) plating and nickel sulfamate plating, and Gold plating, such as hard gold plating and soft gold plating. The permanent pattern can be formed by performing an electroplating process in the electroplating step, and then removing the pattern forming material, and using an optional etching process for unnecessary portions. In the pattern forming method according to the present invention, the permanent pattern can be prevented from being formed on the pattern. The image on the forming material is distorted to accurately and efficiently form 'so' this pattern forming method can be successfully applied to various patterns requiring high-precision exposure, especially high-precision line patterns. [Method of manufacturing printed wiring board] The pattern forming method according to the present invention can be successfully applied to the manufacture of printed wiring boards', especially printed wiring boards having perforations or via holes. Based on -97- 200530754 — The method of manufacturing a printed wiring board according to the pattern forming method of the present invention is explained below. In the method of manufacturing a printed wiring board having perforations and / or via holes, the pattern may be formed by (i) The forming material is laminated on the printed circuit board substrate with holes so that the photosensitive layer faces the substrate, thereby forming a laminate. (Π) irradiating light from the opposite side of the laminate substrate to the area for forming a circuit pattern and holes, Therefore, the photosensitive layer is hardened, (iii) the pattern-forming material support is removed from the laminate, and (iv) the photosensitive layer of the laminate is developed to remove the uncured portion of the laminate. Incidentally, the removal of the support in (iii) may be performed between (i) and (Π) instead of (ii) and (iv) above. Therefore, using the formed pattern, the printed wiring board can be manufactured by etching or plating the printed wiring board substrate by a conventional elimination or additive method (for example, a semi-additive or full additive method). Of these methods, in order to form a printed wiring board by industrially advantageous pultruding, a eliminating method is preferred. After this treatment, the hardened resin remaining on the printed circuit board substrate is stripped, or in the case of a semi-additive method, the copper thin film is etched after stripping, and then the intended printed wiring board is obtained. In the case of a multilayer printed wiring board, a method similar to this printed wiring board can be applied. A method of manufacturing a printed wiring board having a perforation by using a pattern forming material is explained below. First, a printed wiring board substrate in which the surface of the substrate is coated with a metal plating layer is prepared. The printed circuit board substrate may be a copper laminated layer substrate, a substrate manufactured by forming a copper plating layer on an insulating substrate (such as glass or epoxy resin), or -98- 200530754 laminated on these substrates to form copper plating Layer of substrate. In the case where the protective layer exists on the pattern forming material, the protective layer is peeled off, and the photosensitive layer of the pattern forming material is contacted and bonded to the surface of the printed circuit board as a lamination process by a pressure roller, so that the printed circuit board substrate and the printed circuit board can be obtained. A laminate of the above-mentioned laminate. The lamination temperature of the pattern forming material may be appropriately selected without particular limitation; this temperature may be about room temperature, such as 15 to 30 ° C, or a higher temperature, such as 30 to 180 ° C, and is preferably Substantially warm temperatures, such as 60 to 140 ° C. The pressure of the contact-bonding roller can be appropriately selected without particular limitation; preferably, the pressure is 0.1 to 1 MPa; the speed of the contact-bonding can be appropriately selected without specific limitation, and the speed is preferably 1 to 3 meters. /second. The printed circuit board substrate can be preheated before contact bonding; and the substrate can be laminated under low pressure. The laminated body can be formed by laminating a patterning material on a printed wiring board substrate; or, by directly coating the patterning material with a photosensitive resin composition ^ solution on the printed wiring board substrate, and then drying the solution, Therefore, a photosensitive layer is formed by laminating a printed wiring board substrate. Then, the laser beam is irradiated onto the photosensitive layer from the opposite side of the laminated substrate, so that the photosensitive layer is hardened. In this case, the irradiation is performed after the support is stripped, depending on the need for reduced transparency of the support. In the case where the supporter is present on the supporter after the laser irradiation, the supporter is peeled from the laminate as the supporter peeling step. The uncured area of the photosensitive layer on the printed circuit board substrate is developed and dissolved by appropriate development-99-200530754 ~ agent to form a pattern containing a hardened layer for forming a circuit pattern and a hardened layer for protecting a perforated metal layer, and printing The metal layer is exposed at the surface of the circuit board substrate as a development step. Additional processing to promote the hardening reaction, for example, may be performed by post heating or post exposure as appropriate. The development may be a wet method or a dry development method described above. An etching liquid is then used to dissolve the exposed metal layer on the surface of the printed circuit board substrate as an etching procedure. The opening of the perforation is covered with hardened resin or radiating film. Therefore, the etching liquid does not penetrate into the perforation and corrodes the gold in the perforation. Metal plating and metal plating can maintain the specified shape, so that a circuit pattern can be formed on the printed circuit board substrate. . The etching liquid may be appropriately selected depending on the application; when the metal layer is formed of copper, the etching liquid may be exemplified by a copper chloride solution, a ferric chloride solution, an alkaline etching solution, and a hydrogen peroxide solution; In other words, a ferric chloride solution is preferred. Then, for example, the hardened layer is removed from the printed circuit board base I board by a strong alkaline aqueous solution as a hardened material removing step. # The alkali component of the strong alkaline aqueous solution can be appropriately selected without particular limitation, and examples of the alkali component include sodium hydroxide and potassium hydroxide. The pH of the strong alkaline aqueous solution may be, for example, about 12 to 14, preferably about 13 to 14. The strong alkali aqueous solution may be a sodium hydroxide or potassium hydroxide aqueous solution having a concentration of 1 to 10% by mass. The printed wiring board may have a multilayer structure. Incidentally, the above-mentioned pattern forming material can be applied to a plating process instead of the above-mentioned etching process. The plating method can be copper plating, such as copper sulfate plating and copper pyrophosphate plating, welding plating such as Gaohui-100-200530754 light welding plating, nickel plating, such as Watt bath (nickel sulfate-nickel chloride) plating and nickel sulfamate Electric ore, and gold plating, such as hard gold plating and soft gold plating. The present invention is described in more detail with reference to the examples shown below, but it does not limit the invention. All parts are by weight unless otherwise indicated. (Example 1)-Manufacture of pattern forming material-A solution of a photosensitive resin composition containing the following components was applied to a 20-micron-thick polyethylene terephthalate film as a support, and the coating solution was dried to form A 15-micron-thick photosensitive layer was prepared as a patterning material. [Components of the photosensitive resin composition solution]-15 parts of methyl methacrylate / 2-ethylhexyl acrylate / methacrylic acid; ester / methacrylic acid copolymer (mass ratio: 50/20/7/23, Weight average molecular weight; 90,000, acid hydrazone: 150)-7.0 parts of polymerizable monomer represented by the following formula (73)-adduct of dihexyl diisocyanate and tetraethylene oxide monomethacrylic acid (mass ratio : 1/2) 7.0 parts -N-methylacridone 0.11 parts -2,2-fluorene (o-chlorophenyl) -4,4 ', 5,5'. Phenyldiimidazole 2.17 parts 2-fluorene 0.23 parts of benzimidazole-0.02 parts of malachite green salt-0.26 parts of colorless crystal violet-40 parts of methyl ethyl ketone-1 -methoxy-2-propanol 20 parts -101-200530754 h2c = cc. Axe ch2ch2 ^ j &gt; h ^^-Let H2CH2_〇hC〇-Formula (73) wherein, in Formula (73), m + n = 10. The compound represented by the formula (7 3) is included in the compound represented by the above formula (38). A 20-micron-thick polyethylene film as a protective film was laminated on the photosensitive layer of the pattern forming material. A polished, laundered and dried copper laminated φ plate (without perforations, copper thickness: 12 microns) was then prepared as a substrate. When using a laminator (8B-720-PH type manufactured by Taisei-Laminator Co.) to peel off the protective film of the pattern forming material, the photosensitive layer is contact-bonded to the copper laminate to make the photosensitive layer contact the copper laminate. Thus, a laminate including a copper laminate, a photosensitive layer, and polyethylene terephthalate as a support in this order was obtained. The contact bonding conditions were contact bonding roll temperature: 105 ° C, contact bonding roll pressure: 0.3 MPa, and lamination rate: 1 m / min. The obtained laminate was evaluated for resolution, exposure rate, and etching properties. The results are shown in Table 3. &lt; Resolution &gt; (1) Method for measuring the shortest developing time The polyethylene terephthalate film as a support was peeled from the laminate, and then a sodium carbonate aqueous solution having a concentration of 1% by mass was removed at 30 ° C. And 0.15 MPa was sprayed on the entire surface of the photosensitive layer on the copper laminate. The time from the start of spraying to the dissolving layer on the copper laminate was measured, and this time was defined as the shortest developing time. As a result, the minimum development time was 10 seconds. (2) Sensitivity measurement • 102- 200530754 • The laser beam is irradiated to the photosensitive layer of the patterning material of the laminate, in which the optical energy of the laser beam is changed from 0.1 mJ / cm 2 dark 2 1/2 times in increments To 100 mJ / cm², a laser beam is irradiated from the polyethylene terephthalate film side by a pattern forming device described later, and a part of the photosensitive layer is hardened. After standing at room temperature for 10 minutes, the polyethylene terephthalate film as a support was peeled from the laminate, and then a sodium carbonate aqueous solution having a concentration of 1% by mass was sprayed at 30 ° C and 0.15 MPa. On the entire surface of the photosensitive layer on the copper laminate, the minimum development time obtained in (1) above was twice the minimum development time, so the unhardened portion was removed and the thickness of the remaining hardened layer was measured. A sensitivity curve is then prepared by plotting the relationship between the amount of irradiated light and the thickness of the hardened layer. From the obtained sensitivity curve, the optical energy of the thickness of the hardened region of 15 m was determined, and this optical energy was defined as the optical energy required to harden the photosensitive layer. As a result, the optical energy required to harden the photosensitive layer was 3 mJ / cm. &lt; &lt; Pattern-forming device &gt;: &gt; The pattern-forming device used includes the combined laser light source shown in Figs. 27A to 32 as the laser light source; DMD .50 as the laser modulator, which is shown in Fig. 4 In the main scanning direction, 1,024 micromirrors are arranged in an array, and in the sub-scanning direction, 7 6 8 groups of arrays are arranged. In these micromirrors, it can be driven. 〇 2 4 columns X 256 rows; The surface is a toric surface as shown in FIG. 13). The micro lens array 4 72 arranged in an array; and the optical system 4 8 0, 4 8 2 that makes Lei Bow * image on the pattern forming material through the micro lens array. -103- 200530754 * The toric surface of the micro lens is as follows. In order to compensate the distortion of the output surface of the micro lens 4 7 4 as the imaging part, the distortion at the output surface is measured, and the results are shown in FIG. 14. In Fig. 14, the contour lines indicate the same reflective surface locality. The local distance of the local line is 5 nm. In Fig. 14, the X and γ directions are two diagonal lines of the microlens 62, and the microlens 62 can rotate about a rotation axis extending in the γ direction. In Figs. 15A and 15B, the height displacements of the microlenses 62 are shown in the X and Y directions, respectively. As shown in Figures 14, 15A, and 15B, there is distortion at the reflective ® surface of the microlens 62. Relative to the central portion of the micromirror, the distortion in one diagonal direction (ie, the Y direction) is greater than the other diagonal direction. Therefore, the shape of the laser beam B should be distorted at the collection position of the microlenses 55a passing through the microlens array 55. Figures 16A and 16B show the front and side shapes of all microlens arrays 55 in detail, and also show the size of each part in micrometer (mm) units. In DMD 50, the microlenses 62 of 1 024 rows X 2 5 6 columns are driven as explained above with reference to FIG. 4; the microlens array 5 5 enables 1 024 microlenses 55a to be arranged in a row in the width direction, and The longitudinal direction is arranged in 2 5 6 rows and is correspondingly constituted. In Fig. 16A, the position of each microlens 5 5 a is indicated by "j" in the width direction and "k" in the length direction. 17A and 17B each show a front shape and a side shape of one micro lens 55a of the micro lens array 55. FIG. 17A also shows the contours of the microlenses 55a. The end surfaces of the microlenses 5 5 a are aspheric to compensate for aberrations caused by the distortion of the reflective surface of the microlenses 62. In particular, the microlens 55a is a toric surface; the radius of curvature Rx in the optical X direction is -0.125 mm -104-200530754 ', and the radius of curvature Ry in the optical Y direction is -0.1 mm. Therefore, the collection of the laser beams B in the cross-sections parallel to the X and Y directions is approximately as shown in Figs. 18A and 18B. In other words, the χ and γ directions' Y-direction Z microlenses 55a have a shorter radius of curvature and a shorter focal length. Tables 19A, 19B, 19C, and 19D show simulations of the beam diameters near the focal point of the micro lens 55a in the shape shown above. For reference, the 20A, 20B, 20C, & 20D graphs show the simulation of a micro-lens of $ bRm. "Z" in the figure indicates the distance of the evaluation position of the focal direction of the microlens 55a from the laser beam irradiation surface of the microlens 55a. The surface shape of the micro lens 55a in this simulation can be calculated by the following equation: C; Z2, + C; 72 l + SQRT ^^ C ^ X1 -Cy2Y2) In the above formula, Cx represents the radius of curvature in the X direction (= 1 / Rx ), Cy represents the radius of curvature (= 1 / Ry) in the Y direction, X represents the distance from the optical axis β 0 in the χ direction, and Υ represents the distance from the optical axis 0 in the Υ direction. From the comparison of the 19A to 19D images and the 20A to 20D images, it is clear that toric surfaces are used as the microlenses 5 5 a (the cross section in the parallel γ direction has a shorter focal length than the cross section in the parallel X direction) The pattern forming method according to the present invention can reduce the beam shape strain near the collection position. As a result, the image can be exposed on the pattern forming material 150 with high definition and no strain. In addition, it is clear that the mode of the present invention shown in Figures 19A to 19D can produce a wider area with a smaller beam diameter, that is, a longer focal length -105- 200530754 k-point depth. In addition, the openings 5 9 arranged near the collection position of the micro lens array 55 are configured so that each of the openings 5 9 a receives only the laser beam passing through the corresponding micro lens 5 5 a. That is, the opening array 5 9 can provide openings that can ensure that light is prevented from entering from the adjacent opening 5 5 a and that the extinction ratio can be increased. (3) Resolution measurement A laminate was prepared under the same conditions as the method for measuring the shortest developing time as described in (1) above, and it was left to stand for 10 minutes in a surrounding condition of 2 ° C and 55% relative humidity. On the obtained laminated body, a polyethylene terephthalate film as a support, a line pattern exposure was performed according to the following conditions by using the above pattern forming device: line / gap = 1/1, line width: 10 to 50 microns, line increase Amount: 5 microns / line. The optical exposure was adjusted to the optical energy required to harden the photosensitive layer obtained in the above (2) sensitivity measurement, and the polyethylene terephthalate film as a support was peeled from the laminate, and then the concentration was 1 The mass% sodium carbonate aqueous solution was sprayed on the entire surface of the photosensitive layer on the copper laminate at 30 ° C. and 0.15 MPa, and the shortest developing time obtained in the above (1) was twice as long as the unhardened portion was removed. Observe the copper laminate with hardened resin pattern by optical microscope; and determine the narrowest line width without line anomalies (such as blocking, deformation, etc.), and then define the narrowest line width as the resolution. That is, the smaller this threshold is, the better the resolution is. &lt; Exposure rate &gt; By the above pattern forming method, the relative transfer rates of the exposure laser and the photosensitive layer were changed, and thus the speed of forming a general pattern was measured. The exposure was performed from the side of the poly (ethylene terephthalate) film on the photosensitive layer of the pattern forming material of the laminated -106- 200530754 body. Patterns can be formed more efficiently with a lower exposure rate. &lt; Etching properties &gt; The laminate having a pattern formed in the above-mentioned (3) resolution measurement is etched with uranium, so that an iron chloride etchant (an iron chloride-containing etching solution '4 0 wave Mido, solution temperature: 40 ° C) sprayed on the surface of the bare copper laminate for 36 seconds at 0.25 MPa to dissolve the bare copper layer without hardened layer. Then, the pattern was removed by spraying a 2% by mass sodium hydroxide aqueous solution, thereby preparing a printed wiring board having a copper layer circuit pattern as a permanent pattern. Observe the obtained line pattern with an optical microscope and determine the narrowest line width of the line pattern. The smaller the narrowest line width, the more accurate the line pattern and the better the etching properties (Example 2). The pattern forming material was manufactured in the same manner as in Example 1, except that the diisocyanate of tetraisocyanate and the tetracyclic ring of the photosensitive resin composition solution were produced. The addition product of oxyethane monomethacrylate (Molar ratio: 1/2) was changed to a compound represented by the following formula (74). The patterning materials manufactured were evaluated for resolution, exposure rate, and etching properties. The results are shown in Table 3. The shortest developing time is 10 seconds, and the optical mesh g required for curing the photosensitive layer is 3 mJ / cm². The compound represented by the formula (74) is included in the compounds represented by the above formula (24). , _ (? H2) 6 side coo (ch2ch2o) 8-co CO (OCH2CH2) eOCOHN- (CH ^ \ NV (^^^ Formula (74) -107- 200530754) (Example 3) In the same manner as in Example 1 To produce a pattern forming material, in addition to changing the addition product of ethylene diisocyanate and ethylene oxide monomethacrylate (mole ratio: 1/2) of the photosensitive resin composition solution to the following formula ( The compound represented by 7 5). The resolution, exposure rate, and etching properties of the manufactured patterning material were evaluated. The results are shown in Table 3. The minimum development time was 10 seconds, and the optical energy required to harden the photosensitive layer was 3 Halo: Coke / cm 2. The compound represented by the formula (75) is included in the compound represented by the formula (22).

Et—C ^ CH2〇CH2CH2OCONH- (CH2) 6-NHCOO- (CH2CH2〇) 8C (y &gt; ===: = 2) Formula (75) (Example 4) A pattern forming material was manufactured in the same manner as in Example 1, Except for the copolymer of methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid (mass ratio: 50/20/7/23, weight average molecular weight Lu; 90,000, acid : 150) into a copolymer of methyl methacrylate / styrene / benzyl methacrylate / methacrylic acid (mass ratio: 8/30/37/25, weight average molecular weight; 60,000, acid hydrazone: 163). The patterning materials manufactured were evaluated for resolution, exposure rate, and etching properties. The results are not in Table 3. The minimum development time is 10 seconds, and the optical energy required to harden the photosensitive layer is 3 mJ / cm². (Comparative Example 1) Evaluation of the properties of resolution, exposure rate, and etching -108-200530754 was performed in the same manner as in Example 1, except that the microlens array of the patterning device of Example 1 was not used. The results are shown in Table 3. The shortest development time is 10 seconds' and the optical energy required to harden the photosensitive layer is 3 mJ / cm². (Comparative Example 2) Evaluation of resolution, exposure rate, and etching properties were performed in the same manner as in Example 1, except that the microlens array without the patterning device of Example 1 and all the micromirrors (1024 X 7) of the DMD were used. 6 8) are all driven under control. The results are shown in Table 3. The minimum development time was 10 seconds, and the optical energy required to harden the photosensitive layer was 3 mJ / cm². Table 3 Resolution (μιη) Etching properties ㈣ Exposure rate (mm / sec) Example 1 15 25 40 Example 2 15 25 40 Example 3 15 25 40 Example 4 15 25 40 Comparative example 1 25 35 20 Comparative example 25 35 13 Table The results of 3 prove that the wiring patterns of Examples 1 to 4 are significantly more accurate than those of Comparative Examples 1 and 2, and that the exposure rates of Examples 1 to 4 are higher than those of Comparative Examples 1 and 2, resulting in effective wiring pattern formation. In the pattern forming method according to the present invention, it is possible to form a permanent pattern having a high degree of precision and accuracy, and a sufficient efficiency caused by suppressing the deformation of an image formed on the pattern forming material. It is used in various pattern formations that require high-precision exposure, especially circuit patterns with high accuracy. -109- 200530754 [Brief description of the drawings] Figure 1 is an enlarged view showing a part of the structure of the digital micromirror device (DMD) as an example. FIG. 2A is a diagram for explaining the operation of the DMD by way of example. Fig. 2B is a diagram for explaining the operation of the DMD by way of example. Fig. 3A is an exemplary plan view showing the exposure beam and scanning lines in a case where DMD is not included. Figure 3B is an exemplary plan view showing the exposure beam and scanning line B in the case where DMD is included. FIG. 4A is an illustration showing an available area of the DMD. Figure 4B is an illustration showing another DMD available area. Fig. 5 is an exemplary plan view explaining a method of exposing a photosensitive layer in a single scan of a scanner. Fig. 6A is an exemplary plan view explaining the manner in which the photosensitive layer is exposed by multiple scans of the scanner. _ Fig. 6B is another exemplary plan view explaining the manner in which the photosensitive layer is exposed by multiple scans of the scanner. Table 7 is a schematic front view showing a pattern forming device as an example. The figure 8 is not shown as an example. The scanning structure of the patterning device is a slightly irregular view. Fig. 9A is an exemplary plan view showing an exposed area formed on a photosensitive layer. Fig. 9B is an exemplary plan view showing an area exposed by each exposure head -110- 200530754 'Fig. 10 is a schematic front view showing an exposure head including a laser modulator as an example. Fig. 11 is an exemplary cross section showing the structure of the exposure head shown in Fig. 10 in the sub-scanning direction along the optical axis. Figure 12 shows an example controller that controls DMD based on pattern information. Fig. 13A is an exemplary cross section showing the configuration of another exposure head in another collecting optical system along the optical axis. Fig. 13B is an exemplary plan view showing an optical image projected onto an exposed surface when a microlens is not used. Fig. 13C is an exemplary plan view showing an optical image projected onto an exposed surface when a microlens is used. Fig. 14 is an illustration showing the distortion of the reflective surface of the micromirrors constituting the DMD by contour lines. Fig. 15A is an exemplary graph showing the height displacement of the micromirror in the X direction. 0 Fig. 15B is an exemplary graph showing the height displacement of the micromirror in the Y direction. Fig. 16A is a graph illustrating the use of a pattern forming device. An example of a microlens array is a front view. Figure 16B is an exemplary side view showing a microlens array used in a patterning device. Figure 17A is an exemplified front view showing a microlens of a microlens array. FIG. 17B is an exemplary side view showing a microlens of a microlens array. Figure 18 A is an illustration showing the laser collection in a micro-lens cross section -111-200530754. Fig. 18B is an example diagram showing the laser collection situation with another microlens cross section. Fig. 19A is an exemplary diagram showing a simulation of a beam diameter at a focal point of a microlens according to the present invention. Fig. 19B is a diagram showing another example of the simulation of other positions according to the present invention, which is similar to Fig. 19A. Fig. 19C is an illustration showing the similarity to Fig. 19A in accordance with the present invention with respect to other bit-by-simulation. Fig. 19D is an illustration showing another simulation similar to Fig. 19A regarding other positions according to the present invention. Fig. 20A is a diagram showing an example of simulation of a beam diameter near a focal point of a microlens in a conventional pattern forming method. Figure 20B is an illustration showing another simulation similar to Figure 20a for other locations. Figure 20C is an illustration showing another simulation similar to Figure 20A for other locations. Figure 20D is an illustration showing another simulation similar to Figure 20A for other locations. Fig. 21 is an exemplary plan view showing another structure of a combined laser light source. Fig. 22A is an exemplary front view showing a microlens of a microlens array. Fig. 22B is an exemplary side view showing a microlens of a microlens array. Fig. 23A is a schematic view showing the collection situation of the microlens as shown in Fig. 22B -112- 200530754 ^ Fig. 23B is an example diagram showing the laser collection situation with another cross section of the microlens shown in Fig. 22B. Fig. 24A is a diagram illustrating an example of a compensation concept of an optical system for light amount distribution compensation. Fig. 24B is another diagram explaining the compensation concept of the optical system for the compensation of the light amount distribution. Fig. 24C is a diagram illustrating the compensation concept of the optical system for compensation of light amount distribution. Fig. 25 is a diagram showing an example of a light amount distribution of a Gaussian distribution without light amount compensation. Fig. 26 is a diagram showing an example of the compensated light quantity distribution of the optical system compensated by the light quantity distribution. Figure 27A (A) is an exemplary front view showing the composition of a fiber array laser light source. Figure 27A (B) is an enlarged view of part of Figure 27A (A). Figure 27A (C) is an exemplary plan view showing the arrangement of the laser output emission positions. Figure 27 A (D) is a plan view illustrating another arrangement of laser emission positions. Figure 27B is an exemplary front view showing the arrangement of laser emission positions in a fiber array laser light source. Fig. 28 is an illustration showing the structure of a multi-mode optical fiber. Fig. 29 is an exemplary plan view showing the structure of a combined laser light source. -113- 200530754 * Figure 30 is an exemplary plan view showing the structure of a laser module. Fig. 31 is a side view showing an example of the structure of the laser module shown in Fig. 30. Figure 32 is a side view showing part of the structure of the laser module shown in Figure 30. Figure 33 is an exemplary front view showing the structure of the laser array. Figure 3 4 A is an exemplary front view showing a porous laser structure. Fig. 34B is an exemplary front view showing a porous laser array, and the porous laser system shown in Fig. 34A is arranged in an array. Fig. 35 is an exemplary plan view showing another structure of the combined laser light source. Fig. 36A is an exemplary plan view showing another structure of the combined laser light source. Figure 3 6B is an example cross-section of Figure 3 6 A along the optical axis. Fig. 37A is an exemplary cross-section of an exposure device, showing the depth of focus of the prior art 0 pattern forming method. Figure 3 7B is an exemplary cross section of an exposure device showing the depth of focus according to the pattern forming method of the present invention. [Description of main component symbols] 10 heating zone 11-17 collimating lens 20 collecting lens 30 multi-mode fiber 3 0a core -114 · 200530754

3 1 Optical fiber 3 1a Core 40 Packaging 4 1 Packaging cover 42 Base plate 44 Collimation lens holder 45 Collecting see-through holder 46 Fiber holder 47 Line 50 Digital micromirror device 5 1 Imaging system 52 Lens system 5 3 Exposure Light beam 54 Lens system 55 Micro lens array 55a Micro lens 56 Scanning surface 5 8 Lens system 59 On □ Array 59a On P 60 Storage unit 62 Micro mirror 64 Laser module 65 Flat support plate 66 Fiber array laser light source-115- 200530754

67 Lens system 68 Laser emission part 69 Mirror 70 Total internal reflection 稜鏡 7 1 Collecting lens 7 2 Rod integrator 73 稜鏡 pair 74 Imaging lens 100 Heating zone 110 Porous laser 1 10a Emission location 111 Heating zone 113 Rod shape Lens 114 Lens array 120 Collection lens 130 Multi-mode fiber 130a Core 140 Laser array 144 Laser light source 150 Patterning material 152 Platform 1 54 feet 155a Micro lens 1 56 Workbench 15 8 Guide-116- 200530754 1 60 Gate 1 62 Sweep 1 64 Detect 1 66 Expose 168 Expose 1 70 Expose 1 80 Plus 1 82 Plus 1 84 Standard 454 Put 45 8 Put 468 Expose 472 Micro 474 Micro 476 Open 478 Open 480 into 482 into B mine B 1 -B7 mine BS light

Scanner Measuring Sensor Optical Head Light Area Light Area Hot Area Hot Area Straight Lens Array Large Lens Large Lens Light Area Lens Array Lens Array 歹 ij □ Image System Image System Beam Beam Beam Spot LD1-LD7 GaN Semiconductor Laser

Claims (1)

200530754: 10. Scope of patent application: 1. A pattern forming method, comprising: modulating a laser beam irradiated from a laser light source, compensating the modulated laser beam, and thereby modulating and compensating the laser beam The photosensitive layer is exposed, wherein the photosensitive layer is deposited on the support to form a pattern forming material. The modulation system includes a plurality of lasers each capable of receiving a laser beam and outputting the modulated laser imaging portion. The modulator is implemented, and the repairman is implemented by transmitting a circularly varying laser beam through a plurality of aspherical microlenses that can compensate for aberrations due to distortion of the output surface of the imaging part, and The system is configured as a micro lens array. 2 · The pattern forming method according to item 1 of the patent application, wherein the aspheric surface is a toric surface. 3. The pattern forming method according to item 1 of the scope of patent application, wherein the laser modulator controls one of the plurality of imaging parts depending on the pattern information. $ 4. The pattern forming method according to item 1 of the patent application scope, wherein the laser modulator is a spatial light modulator. 5. The pattern forming method according to item 4 of the application, wherein the spatial light modulator is a digital micromirror device (DMD). 6 · The pattern forming method according to item 1 of the patent application range, wherein the exposure is performed by a laser beam transmitted through the opening array. 7 · The pattern forming method according to item 1 of the patent application range, wherein the exposure is performed while moving the laser beam and the photosensitive layer relatively. 8 · The pattern forming method according to item 1 of the patent application range, wherein the photosensitive layer -118- 200530754 'development is performed after exposure. 9 · Pattern formation as described in item 1 of the patent application Patterns are implemented after development. I 0 · If the pattern in item 9 of the patent application is formed as a circuit pattern, and this permanent pattern is formed by one of the less etched. II · If the pattern formation in the first item of the patent application is applied, two or more lasers can be irradiated together. ® 1 2. If the pattern formation in the scope of the patent application includes multi-laser, multi-mode fiber, and collection optics collected in the future in the multi-mode fiber 1 3 · Pattern formation in the scope of the patent application includes adhesive , Polymerizable compound, and photopolymerization 14. The pattern shape as in item 13 of the patent application contains acidic groups. $ 1 5 · Pattern-like vinyl-containing copolymer as in item i 3 of the patent application. 1 6. If the pattern-shaped acid in item 3 of the patent application range is 70 mg KOH / g to 2 50 millimeters 17 · If the pattern-shaped compound in item 13 of the patent application range includes a urethane-containing ester Radical and aryl 1 8 · The pattern-shaped initiator according to item 3 of the patent application scope includes a method selected from halogenated hydrocarbon derivatives, six compounds, organic peroxides, sulfur compounds, and ketone methods, in which a permanent method is formed, in which a permanent pattern Engraving treatment and electroplating treatment method, wherein the laser light source force method, wherein the laser light source is a multi-laser laser beam system. A method wherein the photosensitive layer contains an initiator. A method of forming a binder, a method of forming a binder, a method of forming a binder, and a gram of KOH / g of a binder. A method in which at least one of the monomers can be polymerized. A method for photopolymerization of a square-based diamidine compound, a derivative compound, an aromatic iron salt, -119-200530754, and a metal complex compound. 19. The pattern forming method according to item 1 of the scope of the patent application, wherein the photosensitive layer includes 30% to 90% by mass of a binder, 5% to 60% by mass of a polymerizable compound, and 0.1% by mass to 30% by mass of a photopolymerization initiator. 20. The pattern forming method according to item 1 of the patent application range, wherein the thickness of the photosensitive layer is 1 to 100 micrometers. 2 1 · The pattern forming method according to item 1 of the scope of patent application, wherein the support comprises a synthetic resin and is transparent. 2 2 · The pattern forming method according to item 1 of the scope of patent application, wherein the support body is elongated. 2 3 · The pattern forming method according to item 1 of the scope of patent application, wherein the pattern forming material is an elongated shape formed by being rolled into a bundle shape. 24. The pattern forming method according to item 1 of the scope of patent application, wherein a protective film is formed on the photosensitive layer of the pattern forming material. -120-