JP2006308980A - Pattern forming material and method, and pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pattern forming material capable of preventing light fog under a safe light even when a photosensitive layer has high sensitivity, and suitable for use in production of a printed circuit board. <P>SOLUTION: The pattern forming material has on a support at least a photosensitive layer which can be developed by applying ≥50 mJ/cm<SP>2</SP>energy at 350-450 nm wavelength, wherein when the photosensitive layer is exposed and developed, the minimum energy of light for the exposure which does not change the thickness of an exposed portion of the photosensitive layer before and after the development is 1-20 mJ/cm<SP>2</SP>, and the photosensitive layer contains one or more dyes having a maximum absorption wavelength at 500-650 nm. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a pattern forming material suitably used for manufacturing a printed circuit board, and the like, and a pattern forming method and pattern using the pattern forming material.

  Conventionally, pattern forming materials have been widely used for circuit forming photoresists, solder resists, interlayer insulating films, color filters for liquid crystal display color filters, etc., which are used in the manufacture of printed circuit boards. Pattern formation is performed.

On the other hand, as an exposure apparatus that performs the photolithography method, an exposure apparatus using a photomask is known. Along with the miniaturization of the pattern, a problem of positional deviation of the pattern due to expansion and contraction due to temperature change and humidity change of the photomask film has become apparent during the process. As a solution to the problem of misalignment, a photomask (hereinafter sometimes referred to as “glass mask”) formed on an expensive glass substrate with little deformation has been used.
However, even if the glass mask is used, there is a problem of yield reduction due to contamination of the photomask during the photolithography process.

  In recent years, laser light in the ultraviolet to visible region, such as semiconductor lasers and gas lasers, has been developed based on exposure patterns formed from digital data such as wiring patterns. An exposure apparatus using a laser direct imaging (hereinafter sometimes referred to as “LDI”) system that performs patterning by directly scanning a photosensitive layer on the photosensitive layer has been studied.

As an exposure apparatus using the LDI, light from the light irradiation means is received in accordance with a control signal by a light modulation means having n pixel portions for receiving and emitting light from the light irradiation means using laser light as a light source. A spatial light modulation element that modulates, an enlargement imaging optical system for enlarging an image of light modulated by the spatial light modulation element, and a spatial light modulation element arranged on an imaging plane by the enlargement imaging optical system An exposure apparatus comprising a microlens array having microlenses arranged in an array corresponding to each pixel part, and an imaging optical system that forms an image of light that has passed through the microlens array on a pattern forming material or a screen Is known (for example, see Non-Patent Document 1 and Patent Document 1).
According to the exposure apparatus based on the LDI, even if the size of the pattern projection material or the image projected on the screen is enlarged, the light from each picture element portion of the spatial light modulator is transmitted to each microlens of the microlens array. On the contrary, the pixel size (spot size) in the image that is condensed and projected by the lens is reduced and kept small, so that the sharpness of the image can be kept high.

In addition, the spatial light modulation element is a digital micro-array in which a large number of micromirrors that change the angle of the reflecting surface according to a control signal are two-dimensionally arranged on a semiconductor substrate such as silicon as a picture element. A mirror device (DMD) is known (see Patent Document 2).
Further, in the conventional exposure apparatus, an aperture plate having an aperture corresponding to each microlens of the microlens array is further arranged on the rear side of the microlens array, and the corresponding microlens is arranged. There has been proposed an exposure apparatus in which only the passed light passes through the opening (see Patent Document 3).

  However, the pattern forming material that can be processed with a 395 nm to 415 nm blue ultraviolet laser has a higher sensitivity of the photosensitive layer than the conventional pattern forming material. When exposed to light, free radicals are generated and the polymerization inhibitor is decreased, so that exposure to 395 nm to 415 nm light later increases the sensitivity and the resulting resist line width, so the problem of so-called optical fog is likely to occur. The current situation is that the solution is desired.

JP 2004-1244 A JP 2001-305663 A Special table 2001-500628 gazette Akihito Ishikawa "Development shortening and mass production application by maskless exposure", "Electrotronics packaging technology", Technical Research Committee, Vol.18, No.6, 2002, p.74-79

This invention is made | formed in view of this present condition, and makes it a subject to solve the said various problems in the past, and to achieve the following objectives. That is, the present invention has at least a photosensitive layer that can be developed on a support by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm or more and 450 nm or less,
In the case where the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . Suitable for the production of printed circuit boards, etc. that contain at least one dye having a maximum absorption wavelength of 500 nm or more and 650 nm or less and can prevent light fogging under a safety light even in a highly sensitive photosensitive layer It is an object of the present invention to provide a pattern forming material to be used, and a pattern forming method and pattern using the pattern forming material.

Means for solving the problems are as follows. That is,
<1> On the support, at least a photosensitive layer that can be developed by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm or more and 450 nm or less,
In the case where the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . And a pattern forming material comprising at least one dye having a maximum absorption wavelength of 500 nm to 650 nm.
The pattern forming material according to <1> has at least a photosensitive layer that can be developed by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm to 450 nm on the support,
In the case where the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . And having at least one dye having a maximum absorption wavelength of 500 nm or more and 650 nm or less, so even if it has a highly sensitive photosensitive layer, even if the dye becomes a filter and is irradiated with safety light The decrease in the polymerization inhibitor is suppressed, and even if the light of 395 nm to 415 nm is exposed later, the sensitivity and the obtained resist line width are less changed, and light fogging under a safety light can be prevented.
<2> The pattern forming material according to <1>, wherein an exposure wavelength when obtaining a minimum energy amount of light used for exposure is 395 to 415 nm.
<3> The pattern forming material according to any one of <1> to <2>, wherein the maximum absorption wavelength of the dye is 2 or more in a range of 500 nm to 650 nm.
Although there are a plurality of wavelengths at which the high-sensitivity photosensitive layer is likely to cause a photoreaction with respect to safety light, in the pattern forming material according to <3>, the maximum absorption wavelength of the dye is 2 or more at 500 nm or more and 650 nm or less. Therefore, light fogging under a safety light can be prevented more reliably.
<4> Any one of <1> to <3>, wherein the maximum absorption wavelength of any one of the dyes is 500 nm or more and less than 575 nm, and any other maximum absorption wavelength of the dye is 575 nm or more and 650 nm or less. The pattern forming material described in 1.
In the pattern forming material according to <4>, any one of the dyes has a maximum absorption wavelength of 500 nm or more and less than 575 nm, and any one of the other dyes has a maximum absorption wavelength of 575 nm or more and 650 nm or less. Therefore, it is possible to more reliably prevent light fogging under a safety light.
<5> The pattern forming material according to any one of <1> to <4>, wherein the absorbance at a wavelength of 500 nm to 650 nm is 0.02 to 1.
<6> The pattern forming material according to any one of <1> to <5>, wherein the pattern is a roll wound so that the photosensitive layer is positioned inside.
<7> The pattern forming material according to any one of <1> to <6>, which is a laminated sheet.
<8> After the photosensitive layer modulates the light from the light irradiating means by the light modulating means having n picture elements for receiving and emitting the light from the light irradiating means, the emission surface in the picture element portion The pattern forming material according to any one of <1> to <7>, wherein the pattern forming material is exposed with light that has passed through a microlens array in which microlenses having aspherical surfaces capable of correcting aberrations due to distortion of the lens.

<9> After the pattern forming material according to any one of <1> to <8> is transferred and laminated on the substrate surface under at least one of heating and pressurization to form a photosensitive layer, The pattern forming method is characterized in that the photosensitive layer is exposed and developed.
<10> The pattern forming method according to <9>, wherein the wiring pattern is formed.
<11> The pattern forming method according to <9>, wherein a solder resist pattern is formed.
<12> The pattern forming method according to <9>, wherein the interlayer insulating film is patterned.
<13> A photosensitive layer for each color of R, G, and B in sequence with a predetermined arrangement on the surface of the substrate using at least the pattern forming composition colored in the three primary colors of R, G, and B The pattern forming method according to <9>, wherein the color filter is formed by repeating the formation step, the exposure step, and the development step.
<14> From <9> to <13, wherein the exposure is performed using a light irradiation unit that emits light and a light modulation unit that modulates light emitted from the light irradiation unit based on pattern information to be formed. > The pattern forming method according to any one of the above.
<15> The light modulation unit further includes a pattern signal generation unit that generates a control signal based on pattern information to be formed, and the pattern signal generation unit generates light emitted from the light irradiation unit. The pattern forming method according to <14>, wherein the pattern is modulated according to a signal.
<16> The light modulation means has n pixel parts, and forms any less than n pixel parts continuously arranged from the n pixel parts. The pattern forming method according to any one of <14> to <15>, which is controllable according to pattern information.
<17> The pattern forming method according to any one of <14> to <16>, wherein the light modulation unit is a spatial light modulation element.
<18> The pattern forming method according to <17>, wherein the spatial light modulation element is a digital micromirror device (DMD).
<19> A pattern formed by the pattern forming method according to any one of <9> to <18>.

According to the present invention, the conventional problems can be solved, and at least a photosensitive layer that can be developed by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm to 450 nm on the support,
When the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . A pattern forming material that can prevent light fogging under a safety light even when it has a highly sensitive photosensitive layer by including at least one dye having a maximum absorption wavelength of 500 nm to 650 nm. provide.

(Pattern forming material)
The pattern forming material of the present invention can be developed on a support by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm or more and 450 nm or less (hereinafter also simply referred to as “having photosensitive characteristics”). Have at least
In the case where the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . And a pattern forming material comprising at least one dye having a maximum absorption wavelength of 500 nm to 650 nm.

  In the pattern forming material of the present invention, the photosensitive layer contains at least one dye having a maximum absorption wavelength of 500 nm or more and 650 nm or less, so that even if it is a highly sensitive photosensitive layer, light fogging under a safety light is prevented. Can be prevented. That is, a pattern forming material having a photosensitive layer having a photosensitive characteristic in the vicinity of a wavelength of 400 nm (395 to 415 nm) has a maximum absorption spectral distribution in the vicinity of a wavelength of 580 nm as shown in FIG. It is easy to cause a photoreaction, and when irradiated with light with the yellow safety light, free radicals are generated and the polymerization inhibitor is reduced, so that exposure to light of 395 nm to 415 nm later can provide sensitivity and gain. Although the so-called optical fogging that increases the resist line width has been a problem, as described above, by including a dye having a maximum absorption wavelength of 500 nm or more and 650 nm or less, even if it is a high-sensitivity photosensitive layer. Even when the dye is used, the decrease in the thermal polymerization inhibitor is suppressed even when the dye becomes a filter and is irradiated with safety light. Is, after change of the resist line width also sensitivity and obtained by exposing the light 395nm~415nm is reduced, it can be reliably prevent light fog safety lamp, it is possible to obtain a good sensitivity.

[Support]
There is no restriction | limiting in particular as said support body, Although it can select suitably according to the objective, It is preferable that light transmittance is favorable, and it is more preferable that surface smoothness is further favorable.

The support is preferably made of a synthetic resin and transparent, for example, polyethylene terephthalate, polyethylene naphthalate, polypropylene, polyethylene, cellulose triacetate, cellulose diacetate, poly (meth) acrylic acid alkyl ester, poly ( (Meth) acrylic acid ester copolymer, polyvinyl chloride, polyvinyl alcohol, polycarbonate, polystyrene, cellophane, polyvinylidene chloride copolymer, polyamide, polyimide, vinyl chloride / vinyl acetate copolymer, polytetrafluoroethylene, polytrifluoro Various plastic films, such as ethylene, a cellulose film, and a nylon film, are mentioned, Among these, polyethylene terephthalate is particularly preferable. These may be used alone or in combination of two or more.
As the support, for example, the support described in JP-A-4-208940, JP-A-5-80503, JP-A-5-173320, JP-A-5-72724, or the like is used. You can also.

  There is no restriction | limiting in particular as thickness of the said support body, Although it can select suitably according to the objective, For example, 4-300 micrometers is preferable, 5-175 micrometers is more preferable, and 10-100 micrometers is especially preferable.

  There is no restriction | limiting in particular as a shape of the said support body, Although it can select suitably according to the objective, A long shape is preferable. There is no restriction | limiting in particular as the length of the said elongate support body, For example, the thing of length of 10-20,000 m is mentioned.

(Photosensitive layer)
The photosensitive layer can be developed by applying energy of 50 mJ / cm ² at a wavelength of 350 nm to 450 nm. When the photosensitive layer is exposed and developed, the thickness of the exposed portion is not changed before and after the development. The minimum energy of light used for the exposure is 1 to 20 mJ / cm ² , and at least one dye having a maximum absorption wavelength of 500 nm to 650 nm is included. If the minimum energy is less than 1, fog may occur in the processing step, and if it exceeds 20, the time required for exposure may become long and the processing speed may be slow.
Here, “the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer after the exposure / development” is so-called development sensitivity, for example, when the photosensitive layer is exposed. It can be determined from a graph (sensitivity curve) showing the relationship between the amount of light energy (exposure amount) used for the exposure and the thickness of the cured layer generated by the development process following the exposure.
The thickness of the cured layer increases as the amount of exposure increases, and then becomes substantially the same and substantially constant as the thickness of the photosensitive layer before the exposure. The development sensitivity is a value obtained by reading the minimum exposure when the thickness of the cured layer becomes substantially constant.
Here, when the thickness of the cured layer is a minimum exposure amount with a thickness change within -5% with respect to the thickness that is constant due to the overexposure amount, the thickness of the cured layer is changed by exposure and development. Consider it not.
A method for measuring the thickness of the cured layer and the photosensitive layer before exposure is not particularly limited and may be appropriately selected depending on the intended purpose. However, a film thickness measuring device, a surface roughness measuring machine (for example, Surfcom) 1400D (manufactured by Tokyo Seimitsu Co., Ltd.)) and the like.
The exposure wavelength when determining the minimum energy amount of light used for the exposure is 405 nm.
The photosensitive layer is a copolymer obtained by reacting a primary amine compound with an anhydride group of a maleic anhydride copolymer (hereinafter also referred to as “binder”), a polymerizable compound. And a photopolymerization initiator, and further, a pattern forming composition containing other components appropriately selected as necessary.

-Dye-
As the dye, an organic solvent-soluble dye is preferable from the viewpoint of serving as a filter for safety light as described above. If the dye is a water-soluble dye, it may not be able to fully serve as a filter for safety light.
The organic solvent-soluble dye is not particularly limited as long as it has a maximum absorption wavelength of 500 nm or more and 650 nm or less, and can be appropriately selected and used. Gran, BS RED-T, BS RED-H (manufactured by LANXESS), VPB-NAPS, DIAMOND GREEN (manufactured by Hodogaya Chemical Co., Ltd.), Orasol Blue BL, Orasol Red G (manufactured by Ciba Special Chemicals) ), ASTRA Blue Base 6GLL, MACROLEX Blue RR Gran, MACROLEX Blue 3R Gran (manufactured by Bayer Chemicals), Neozapon pin 478, Neozapon RZD 355, NeoZap3on Preferred examples include 65, Neozapon Red 395 (manufactured by BASF Japan), Sandoplast Blue 2B, Sandoplast Violet RSB, Sandoplast Blue R, Sandoplast RLS (manufactured by Clariant Japan).

Among these, a dye having a maximum absorption wavelength of 2 or more at 500 nm or more and 650 nm or less is preferable. There are multiple wavelengths at which the high-sensitivity photosensitive layer is likely to cause a photoreaction with safety light. By using a dye having a maximum absorption wavelength of 2 to 500 nm or more and 650 nm or less, light under a safety light can be more reliably obtained. Fog can be prevented.
Examples of the dye having a maximum absorption wavelength of 2 or more at 500 nm or more and 650 nm or less include BS Redviolet R Gran, MACROLEX Blue RR Gran, MACROLEX Blue 3R Gran, Orasol Blue BL, Sandoplast Blue 2B, and the like.

Moreover, although the said dye may be used individually by 1 type, it is more preferable to use combining 2 or more types. When two or more dyes are used, it is preferable to combine at least a dye having a maximum absorption wavelength of 500 nm to less than 575 nm and a dye having a maximum absorption wavelength of 575 nm to 650 nm from the above viewpoint.
Examples of the dye having the maximum absorption wavelength of 500 nm or more and less than 575 nm include, for example, BS
Red-T, BS Red-H, Neozapon Red355, Neozapon Pink 478, and the like.
Examples of the dye having the maximum absorption wavelength of 575 nm or more and 650 nm or less include VPB-NAPS, DIAMOND GREEN, Sandoplast Blue R, and the like.

The addition amount of the dye is preferably 0.01 to 0.2% by mass, and more preferably 0.03 to 0.1% by mass with respect to the total amount of the photosensitive layer.
The absorbance of the pattern forming material of the present invention at a wavelength of 500 nm to 600 nm when the dye is added is preferably 0.02 or more and 1 or less, more preferably 0.3 or more and 0.85 or less. preferable. If the absorbance is less than 0.02, the dye may not sufficiently serve as a filter for safety light, and light fogging may not be prevented. In addition, the printing function that gives a visible image to the photosensitive layer after exposure may not be exhibited.

-Binder-
The binder is preferably, for example, swellable with an alkaline liquid, and more preferably soluble in an alkaline liquid.
As the binder exhibiting swellability or solubility with respect to the alkaline liquid, for example, those having an acidic group are preferably mentioned.

There is no restriction | limiting in particular as said acidic group, According to the objective, it can select suitably, For example, a carboxyl group, a sulfonic acid group, a phosphoric acid group etc. are mentioned, Among these, a carboxyl group is preferable.
Examples of the binder having a carboxyl group include a vinyl copolymer having a carboxyl group, a polyurethane resin, a polyamic acid resin, and a modified epoxy resin. Among these, the solubility in a coating solvent, the solubility in an alkali developer, and the like. A vinyl copolymer having a carboxyl group is preferable from the viewpoint of solubility, suitability for synthesis, ease of adjustment of film properties, and the like. From the viewpoint of developability, a copolymer of at least one of styrene and a styrene derivative is also preferable.

  The vinyl copolymer having a carboxyl group can be obtained by copolymerization of at least (1) a vinyl monomer having a carboxyl group, and (2) a monomer copolymerizable therewith.

Examples of the vinyl monomer having a carboxyl group include (meth) acrylic acid, vinyl benzoic acid, maleic acid, maleic acid monoalkyl ester, fumaric acid, itaconic acid, crotonic acid, cinnamic acid, acrylic acid dimer, and hydroxyl group. An addition reaction product of a monomer (for example, 2-hydroxyethyl (meth) acrylate) and a cyclic anhydride (for example, maleic anhydride, phthalic anhydride, cyclohexanedicarboxylic anhydride), ω-carboxy-polycaprolactone mono Examples include (meth) acrylate. Among these, (meth) acrylic acid is particularly preferable from the viewpoints of copolymerizability, cost, solubility, and the like.
Moreover, you may use the monomer which has anhydrides, such as maleic anhydride, itaconic anhydride, and citraconic anhydride, as a precursor of a carboxyl group.

  The other copolymerizable monomer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include (meth) acrylic acid esters, crotonic acid esters, vinyl esters, and maleic acid diesters. , Fumaric acid diesters, itaconic acid diesters, (meth) acrylamides, vinyl ethers, esters of vinyl alcohol, styrenes (eg styrene, styrene derivatives, etc.), (meth) acrylonitrile, complex substituted with vinyl groups Cyclic groups (for example, vinylpyridine, vinylpyrrolidone, vinylcarbazole, etc.), N-vinylformamide, N-vinylacetamide, N-vinylimidazole, vinylcaprolactone, 2-acrylamido-2-methylpropanesulfonic acid, monophosphate ( 2-Acryllo Ciethyl ester), phosphoric acid mono (1-methyl-2-acryloyloxyethyl ester), vinyl monomers having a functional group (for example, urethane group, urea group, sulfonamide group, phenol group, imide group) and the like. Of these, styrenes are preferred.

  Examples of the (meth) acrylic acid esters include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, and isobutyl (meth) ) Acrylate, t-butyl (meth) acrylate, n-hexyl (meth) acrylate, cyclohexyl (meth) acrylate, t-butylcyclohexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, t-octyl (meth) acrylate, Dodecyl (meth) acrylate, octadecyl (meth) acrylate, acetoxyethyl (meth) acrylate, phenyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-methoxyethyl (meth) acrylate 2-ethoxyethyl (meth) acrylate, 2- (2-methoxyethoxy) ethyl (meth) acrylate, 3-phenoxy-2-hydroxypropyl (meth) acrylate, benzyl (meth) acrylate, diethylene glycol monomethyl ether (meta ) Acrylate, diethylene glycol monoethyl ether (meth) acrylate, diethylene glycol monophenyl ether (meth) acrylate, triethylene glycol monomethyl ether (meth) acrylate, triethylene glycol monoethyl ether (meth) acrylate, polyethylene glycol monomethyl ether (meth) acrylate , Polyethylene glycol monoethyl ether (meth) acrylate, β-phenoxyethoxyethyl acrylate, Nylphenoxypolyethylene glycol (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, trifluoroethyl (meth) acrylate, octafluoropentyl (meth) Examples thereof include acrylate, perfluorooctylethyl (meth) acrylate, tribromophenyl (meth) acrylate, and tribromophenyloxyethyl (meth) acrylate.

  Examples of the crotonic acid esters include butyl crotonate and hexyl crotonate.

  Examples of the vinyl esters include vinyl acetate, vinyl propionate, vinyl butyrate, vinyl methoxyacetate, vinyl benzoate, and the like.

  Examples of the maleic acid diesters include dimethyl maleate, diethyl maleate, and dibutyl maleate.

  Examples of the fumaric acid diesters include dimethyl fumarate, diethyl fumarate, dibutyl fumarate and the like.

  Examples of the itaconic acid diesters include dimethyl itaconate, diethyl itaconate, and dibutyl itaconate.

  Examples of the (meth) acrylamides include (meth) acrylamide, N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-propyl (meth) acrylamide, N-isopropyl (meth) acrylamide, N- n-butylacryl (meth) amide, Nt-butyl (meth) acrylamide, N-cyclohexyl (meth) acrylamide, N- (2-methoxyethyl) (meth) acrylamide, N, N-dimethyl (meth) acrylamide, Examples thereof include N, N-diethyl (meth) acrylamide, N-phenyl (meth) acrylamide, N-benzyl (meth) acrylamide, (meth) acryloylmorpholine, diacetone acrylamide and the like.

  Examples of the styrenes include styrene, methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, isopropyl styrene, butyl styrene, hydroxy styrene, methoxy styrene, butoxy styrene, acetoxy styrene, chlorostyrene, dichlorostyrene, bromostyrene, chloro Examples include methylstyrene, hydroxystyrene protected with a group that can be deprotected by an acidic substance (for example, t-Boc and the like), methyl vinylbenzoate, α-methylstyrene, and the like.

  Examples of the vinyl ethers include methyl vinyl ether, butyl vinyl ether, hexyl vinyl ether, and methoxyethyl vinyl ether.

  Examples of the method for synthesizing the vinyl monomer having a functional group include an addition reaction of an isocyanate group and a hydroxyl group or an amino group, specifically, a monomer having an isocyanate group and a compound containing one hydroxyl group. Alternatively, an addition reaction with a compound having one primary or secondary amino group, an addition reaction between a monomer having a hydroxyl group or a monomer having a primary or secondary amino group, and a monoisocyanate can be given.

  Examples of the monomer having an isocyanate group include compounds represented by the following structural formulas (1) to (3).

However, in the above structural formula (1) ~ (3), R 1 represents a hydrogen atom or a methyl group.

  Examples of the monoisocyanate include cyclohexyl isocyanate, n-butyl isocyanate, toluyl isocyanate, benzyl isocyanate, and phenyl isocyanate.

  Examples of the monomer having a hydroxyl group include compounds represented by the following structural formulas (4) to (12).

However, in the structural formulas (4) to (12), R ¹ represents a hydrogen atom or a methyl group, and n represents an integer of 1 or more.

  Examples of the compound containing one hydroxyl group include alcohols (for example, methanol, ethanol, n-propanol, i-propanol, n-butanol, sec-butanol, t-butanol, n-hexanol, 2-ethylhexanol). , N-decanol, n-dodecanol, n-octadecanol, cyclopentanol, cyclohexanol, benzyl alcohol, phenylethyl alcohol, etc.), phenols (eg, phenol, cresol, naphthol, etc.), and further containing substituents Examples thereof include fluoroethanol, trifluoroethanol, methoxyethanol, phenoxyethanol, chlorophenol, dichlorophenol, methoxyphenol, acetoxyphenol, and the like.

  Examples of the monomer having a primary or secondary amino group include vinylbenzylamine.

  Examples of the compound containing one primary or secondary amino group include alkylamines (methylamine, ethylamine, n-propylamine, i-propylamine, n-butylamine, sec-butylamine, t-butylamine, hexyl). Amine, 2-ethylhexylamine, decylamine, dodecylamine, octadecylamine, dimethylamine, diethylamine, dibutylamine, dioctylamine), cyclic alkylamine (cyclopentylamine, cyclohexylamine, etc.), aralkylamine (benzylamine, phenethylamine, etc.), Arylamines (aniline, toluylamine, xylylamine, naphthylamine, etc.), combinations thereof (N-methyl-N-benzylamine, etc.), and amines containing substituents (trifluoroethylamino , Hexafluoro isopropyl amine, methoxyaniline, methoxypropylamine and the like) and the like.

  Examples of the other copolymerizable monomers other than those described above include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, benzyl (meth) acrylate, and (meth) acrylic. Preferable examples include 2-ethylhexyl acid, styrene, chlorostyrene, bromostyrene, and hydroxystyrene.

  The said other copolymerizable monomer may be used individually by 1 type, and may use 2 or more types together.

  The vinyl copolymer can be prepared by copolymerizing the corresponding monomers by a known method according to a conventional method. For example, it can be prepared by using a method (solution polymerization method) in which the monomer is dissolved in a suitable solvent and a radical polymerization initiator is added thereto to polymerize in a solution. Moreover, it can prepare by utilizing superposition | polymerization by what is called emulsion polymerization etc. in the state which disperse | distributed the said monomer in the aqueous medium.

  The suitable solvent used in the solution polymerization method is not particularly limited and may be appropriately selected depending on the monomer used and the solubility of the copolymer to be produced. For example, methanol, ethanol, propanol, Examples include isopropanol, 1-methoxy-2-propanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, methoxypropyl acetate, ethyl lactate, ethyl acetate, acetonitrile, tetrahydrofuran, dimethylformamide, chloroform, toluene and the like. These solvents may be used alone or in combination of two or more.

  The radical polymerization initiator is not particularly limited, and examples thereof include 2,2′-azobis (isobutyronitrile) (AIBN) and 2,2′-azobis- (2,4′-dimethylvaleronitrile). Examples thereof include peroxides such as azo compounds and benzoyl peroxide, and persulfates such as potassium persulfate and ammonium persulfate.

There is no restriction | limiting in particular as content rate of the polymeric compound which has a carboxyl group in the vinyl copolymer which has the said carboxyl group, Although it can select suitably according to the objective, For example, 5-50 mol% is preferable, 10-40 mol% is more preferable and 15-35 mol% is especially preferable.
If the content is less than 5 mol%, the developability to alkaline water may be insufficient, and if it exceeds 50 mol%, the developer resistance of the cured portion (image portion) may be insufficient.

There is no restriction | limiting in particular as molecular weight of the binder which has the said carboxyl group, Although it can select suitably according to the objective, For example, 2,000-300,000 are preferable as a mass mean molecular weight, 4,000-150 1,000 is more preferable.
When the mass average molecular weight is less than 2,000, the strength of the film tends to be insufficient and stable production may be difficult, and when it exceeds 300,000, developability may be deteriorated.

  The binder which has the said carboxyl group may be used individually by 1 type, and may use 2 or more types together. Examples of the case where two or more binders are used in combination include, for example, a combination of two or more binders composed of different copolymer components, two or more binders having different mass average molecular weights, and two or more binders having different dispersities. Is mentioned.

  The binder having a carboxyl group may be partially or entirely neutralized with a basic substance. The binder may be used in combination with resins having different structures such as polyester resin, polyamide resin, polyurethane resin, epoxy resin, polyvinyl alcohol, and gelatin.

  Moreover, as the binder, a resin soluble in an alkaline liquid described in Japanese Patent No. 2873890 and the like can be used.

Furthermore, the following binders can also be used suitably.
For example, JP 51-131706, JP 52-94388, JP 61-243869, JP 64-62375, JP 2-97513, JP 3-289656, JP The epoxy acrylate compound which has an acidic group as described in each gazette, such as 2002-296776, is mentioned.
Specifically, phenol novolac type epoxy acrylate monotetrahydrophthalate, cresol novolac epoxy acrylate monotetrahydrophthalate, bisphenol A type epoxy acrylate monotetrahydrophthalate, etc., for example, (meth) acrylic to epoxy resin or polyfunctional epoxy compound It is obtained by reacting a carboxyl group-containing monomer such as an acid and further adding a dibasic anhydride such as phthalic anhydride.

  The molecular weight of the epoxy acrylate compound is preferably 1,000 to 200,000, and more preferably 2,000 to 100,000. When the molecular weight is less than 1,000, the tackiness of the surface of the photosensitive layer may become strong, so that the film quality may become brittle or the surface strength may be deteriorated after curing of the photosensitive layer. If it exceeds 000, the developability may deteriorate.

An acrylic resin having at least one polymerizable group such as an acidic group and a double bond described in JP-A-6-295060 can also be used.
Specifically, at least one polymerizable double bond in the molecule, for example, an acrylic group such as a (meth) acrylate group or (meth) acrylamide group, various polymerizations such as vinyl ester of carboxylic acid, vinyl ether, allyl ether Sex double bonds can be used.
More specifically, acrylic resins containing carboxyl groups as acidic groups, glycidyl esters of unsaturated fatty acids such as glycidyl acrylate, glycidyl methacrylate, cinnamic acid, and epoxy groups such as cyclohexene oxide in the same molecule (meth) An isocyanate group-containing polymerizable compound such as isocyanate ethyl (meth) acrylate is added to a compound obtained by adding an epoxy group-containing polymerizable compound such as a compound having an acryloyl group, an acrylic resin containing an acidic group and a hydroxyl group. Examples thereof include compounds obtained by addition, and compounds obtained by adding a polymerizable compound containing a hydroxyl group such as hydroxyalkyl (meth) acrylate to an acrylic resin containing an anhydride group.
Examples of these commercially available products include Kaneka Resin AX (manufactured by Kaneka Chemical Co., Ltd.) and cyclomer (CYCLOMER) A-200 (manufactured by Daicel Chemical Industries, Ltd.). Cyclomer (CYCLOMER) M-200 (manufactured by Daicel Chemical Industries, Ltd.).

  In addition, a reaction product of hydroxyalkyl acrylate or hydroxyalkyl methacrylate described in JP-A-50-59315 with any of polycarboxylic anhydride and shrimp halohydrin can also be used.

  Further, a compound obtained by adding an acid anhydride to an epoxy acrylate having a fluorene skeleton described in JP-A-5-70528, a polyamide (imide) resin described in JP-A-11-288087, and JP-A-2-97502. Copolymers of styrene or styrene derivatives containing amide groups and acid anhydrides described in JP-A No. 2003-20310, and polyimide precursors described in JP-A No. 11-282155 can also be used.

The molecular weight of the binder such as the acrylic resin, epoxy acrylate having a fluorene skeleton, polyamide (imide), amide group-containing styrene / acid anhydride copolymer or polyimide pre-dried body is preferably 3,000 to 500,000. 5,000 to 100,000 are more preferable. If the molecular weight is less than 3,000, the tackiness of the surface of the photosensitive layer may become strong, so the film quality may become brittle or the surface strength may deteriorate after curing of the photosensitive layer. If it exceeds 000, the developability may deteriorate.
These binders may be used alone or in combination of two or more.

There is no restriction | limiting in particular as content of the said binder in the said photosensitive layer, Although it can select suitably according to the objective, For example, 10-90 mass% is preferable, 20-80 mass% is more preferable, 40- 80% by mass is particularly preferred.
When the content is less than 10% by mass, alkali developability and adhesion to a printed wiring board forming substrate (for example, a copper-clad laminate) may be deteriorated. Stability and strength of the cured film (tent film) may be reduced. The content may be the total content of the binder and the polymer binder used in combination as necessary.

The acid value of the binder is not particularly limited and may be appropriately selected depending on the intended purpose. For example, it is preferably 70 to 250 mgKOH / g, more preferably 90 to 200 mgKOH / g, and 100 to 180 mgKOH / g. Particularly preferred.
When the acid value is less than 70 mgKOH / g, developability may be insufficient, resolution may be inferior, and permanent patterns such as wiring patterns may not be obtained with high definition. When the acid value exceeds 250 mgKOH / g In some cases, at least one of the developer resistance and adhesion of the pattern deteriorates, and a permanent pattern such as a wiring pattern cannot be obtained with high definition.

-Polymerizable compound-
The polymerizable compound is not particularly limited and may be appropriately selected depending on the intended purpose. However, the polymerizable compound has at least one addition-polymerizable group in the molecule and has a boiling point of 100 ° C. or higher at normal pressure. A compound is preferable, and at least one selected from monomers having a (meth) acryl group is more preferable.

  There is no restriction | limiting in particular as a monomer which has the said (meth) acryl group, According to the objective, it can select suitably, For example, monofunctional acrylate and monofunctional methacrylate (for example, polyethylene glycol mono (meth) acrylate, polypropylene glycol) Mono (meth) acrylate, phenoxyethyl (meth) acrylate, etc.), polyfunctional alcohol, and (meth) acrylated after addition reaction of ethylene oxide or propylene oxide (eg, polyethylene glycol di (meth) acrylate, polypropylene) Glycol di (meth) acrylate, trimethylol ethane triacrylate, trimethylol propane triacrylate, trimethylol propane diacrylate, neopentyl glycol di (meth) acrylate , Pentaerythritol tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, hexanediol di (meth) acrylate, trimethylolpropane tri (acryloyl) Oxypropyl) ether, tri (acryloyloxyethyl) isocyanurate, tri (acryloyloxyethyl) cyanurate, glycerin tri (meth) acrylate, trimethylolpropane, glycerin, bisphenol, etc.), Japanese Patent Publication No. 48-41708, Japanese Patent Publication No. 50- Nos. 6034 and 51-37193, and urethane acrylates described in JP-A-48-64183 and JP-B-49-43191. And polyester acrylates, polyfunctional acrylates and methacrylates (for example, epoxy acrylates which are reaction products of an epoxy resin and (meth) acrylic acid) and the like described in JP-B 52-30490, etc. It is done. Among these, trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and dipentaerythritol penta (meth) acrylate are particularly preferable.

  2-50 mass% is preferable, as for solid content in the said composition for pattern formation of the said polymeric compound, 4-40 mass% is more preferable, and 5-30 mass% is especially preferable. If the solid content is less than 2% by mass, problems such as deterioration in developability and reduction in exposure sensitivity may occur, and if it exceeds 50% by mass, the adhesiveness of the photosensitive layer may become too strong. Yes, not preferred.

-Photopolymerization initiator-
The photopolymerization initiator is not particularly limited as long as it has the ability to initiate polymerization of the polymerizable compound, and can be appropriately selected from known photopolymerization initiators, and a photoexcited sensitizer and It may be an activator that generates some action and generates active radicals, and may be an initiator that initiates cationic polymerization depending on the type of monomer, but is sensitive to visible light from the ultraviolet region. Those having high properties, more preferably those having high sensitivity to exposure with a laser beam having a wavelength of 395 to 415 nm, halogenated hydrocarbon derivatives, phosphine oxides, hexaarylbiimidazoles, oxime derivatives, organic peroxides, In particular comprising at least one selected from thio compounds, ketone compounds, aromatic onium salts and ketoxime ethers Masui.
The photopolymerization initiator preferably contains at least one component having a molecular extinction coefficient of at least about 50 within a range of about 300 to 800 nm (more preferably 330 to 500 nm).

  Examples of the photopolymerization initiator include halogenated hydrocarbon derivatives (for example, those having a triazine skeleton, those having an oxadiazole skeleton, those having an oxadiazole skeleton), phosphine oxide, hexaarylbiimidazole, Examples include oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, and ketoxime ethers.

  Examples of the halogenated hydrocarbon compound having a triazine skeleton include those described in Wakabayashi et al., Bull. Chem. Soc. Japan, 42, 2924 (1969), a compound described in British Patent 1388492, a compound described in JP-A-53-133428, a compound described in German Patent 3337024, F.I. C. J. Schaefer et al. Org. Chem. 29, 1527 (1964), compounds described in JP-A-62-258241, compounds described in JP-A-5-281728, compounds described in JP-A-5-34920, US Pat. No. 4,221,976 And the compounds described in the book.

  Wakabayashi et al., Bull. Chem. Soc. As a compound described in Japan, 42, 2924 (1969), for example, 2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-chlorophenyl) -4,6 -Bis (trichloromethyl) -1,3,5-triazine, 2- (4-tolyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxyphenyl)- 4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2,4-dichlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2, 4,6-tris (trichloromethyl) -1,3,5-triazine, 2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2-n-nonyl-4,6- Bis (trichloromethyl) 1,3,5-triazine, and 2-(alpha, alpha, beta-trichloroethyl) -4,6-bis (trichloromethyl) -1,3,5-triazine.

Examples of the compound described in the British Patent 1388492 include, for example, 2-styryl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methylstyryl) -4,6- Bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxystyryl)- 4-amino-6-trichloromethyl-1,3,5-triazine and the like can be mentioned.
Examples of the compounds described in JP-A-53-133428 include 2- (4-methoxy-naphth-1-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2 -(4-Ethoxy-naphth-1-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- [4- (2-ethoxyethyl) -naphth-1-yl]- 4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4,7-dimethoxy-naphth-1-yl) -4,6-bis (trichloromethyl) -1,3,5- Examples include triazine and 2- (acenaphtho-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine.

  Examples of the compound described in the specification of German Patent 3333724 include 2- (4-styrylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4 -Methoxystyryl) phenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (1-naphthylvinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5 -Triazine, 2-chlorostyrylphenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-thiophen-2-vinylenephenyl) -4,6-bis (trichloromethyl)- 1,3,5-triazine, 2- (4-thiophene-3-vinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-furan-2 Vinylenephenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, and 2- (4-benzofuran-2-vinylenephenyl) -4,6-bis (trichloromethyl) -1,3 5-triazine etc. are mentioned.

  F. above. C. J. Schaefer et al. Org. Chem. 29, 1527 (1964) include, for example, 2-methyl-4,6-bis (tribromomethyl) -1,3,5-triazine, 2,4,6-tris (tribromomethyl); -1,3,5-triazine, 2,4,6-tris (dibromomethyl) -1,3,5-triazine, 2-amino-4-methyl-6-tri (bromomethyl) -1,3,5- Examples include triazine and 2-methoxy-4-methyl-6-trichloromethyl-1,3,5-triazine.

  Examples of the compounds described in JP-A-62-258241 include 2- (4-phenylethynylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- Naphthyl-1-ethynylphenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4-tolylethynyl) phenyl) -4,6-bis (trichloromethyl) -1 , 3,5-triazine, 2- (4- (4-methoxyphenyl) ethynylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4-isopropylphenyl) Ethynyl) phenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4- (4-ethylphenylethynyl) phenyl) -4,6-bis (trichloromethyl) Le) -1,3,5-triazine.

  Examples of the compound described in JP-A-5-281728 include 2- (4-trifluoromethylphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2, 6-difluorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2,6-dichlorophenyl) -4,6-bis (trichloromethyl) -1,3,5- Examples include triazine, 2- (2,6-dibromophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine.

  Examples of the compound described in JP-A-5-34920 include 2,4-bis (trichloromethyl) -6- [4- (N, N-diethoxycarbonylmethylamino) -3-bromophenyl] -1, 3,5-triazine, trihalomethyl-s-triazine compounds described in US Pat. No. 4,239,850, 2,4,6-tris (trichloromethyl) -s-triazine, 2- (4-chlorophenyl) Examples include -4,6-bis (tribromomethyl) -s-triazine.

  Examples of the compound described in US Pat. No. 4,221,976 include compounds having an oxadiazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2-trichloromethyl). -5- (4-chlorophenyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4-oxadiazole, 2-trichloromethyl-5- ( 2-naphthyl) -1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2-tribromomethyl-5- (2-naphthyl) -1 , 3,4-oxadiazole; 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5- (4-chlorostyryl) -1, , 4-oxadiazole, 2-trichloromethyl-5- (4-methoxystyryl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (1-naphthyl) -1,3,4- Oxadiazole, 2-trichloromethyl-5- (4-n-butoxystyryl) -1,3,4-oxadiazole, 2-tripromemethyl-5-styryl-1,3,4-oxadiazole, etc. ) And the like.

  Examples of the oxime derivative suitably used in the present invention include 3-benzoyloxyiminobutan-2-one, 3-acetoxyiminobutan-2-one, 3-propionyloxyiminobutan-2-one, and 2-acetoxy. Iminopentan-3-one, 2-acetoxyimino-1-phenylpropan-1-one, 2-benzoyloxyimino-1-phenylpropan-1-one, 3- (4-toluenesulfonyloxy) iminobutane-2- ON, and 2-ethoxycarbonyloxyimino-1-phenylpropan-1-one.

  Further, as photopolymerization initiators other than the above, acridine derivatives (for example, 9-phenylacridine, 1,7-bis (9,9′-acridinyl) heptane, etc.), N-phenylglycine, and the like, polyhalogen compounds (for example, Carbon tetrabromide, phenyltribromomethylsulfone, phenyltrichloromethylketone, etc.), coumarins (for example, 3- (2-benzofuroyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl) -7- (1-pyrrolidinyl) ) Coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3′-carbonylbis (5 , 7-di-n-propoxycoumarin), 3,3′-carbonylbis (7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3- (2-furoyl) -7-diethylaminocoumarin, 3- (4-diethylaminocinnamoyl) -7-diethylaminocoumarin, 7-methoxy-3- (3-pyridylcarbonyl) coumarin, 3-benzoyl-5,7-dipropoxycoumarin, 7-benzotriazol-2-ylcoumarin, JP-A-5-19475, JP-A-7-271028, JP-A-2002-363206 No., JP-A-2002-363207, JP-A-2002-363208, JP-A-2002-363209, etc.), amines (for example, ethyl 4-dimethylaminobenzoate, 4-dimethylaminobenzoate) N-butyl acid, 4-dimethylaminobenzoic acid phenethyl, 4-dimethyl 2-phthalimidoethyl tilaminobenzoate, 2-methacryloyloxyethyl 4-dimethylaminobenzoate, pentamethylenebis (4-dimethylaminobenzoate), phenethyl of 3-dimethylaminobenzoic acid, pentamethylene ester, 4-dimethylaminobenzaldehyde, 2-chloro-4-dimethylaminobenzaldehyde, 4-dimethylaminobenzyl alcohol, ethyl (4-dimethylaminobenzoyl) acetate, 4-piperidinoacetophenone, 4-dimethylaminobenzoin, N, N-dimethyl-4-toluidine, N, N-diethyl-3-phenetidine, tribenzylamine, dibenzylphenylamine, N-methyl-N-phenylbenzylamine, 4-bromo-N, N-dimethylaniline, tridodecylamine, amino Nofluoranes (ODB, ODBII, etc.), crystal violet lactone, leuco crystal violet, etc.), acylphosphine oxides (for example, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) ) -2,4,4-trimethyl-pentylphenylphosphine oxide, Lucirin TPO, etc.), metallocenes (for example, bis (η5-2,4-cyclopentadien-1-yl) -bis (2,6-difluoro-3-) (1H-pyrrol-1-yl) -phenyl) titanium, η5-cyclopentadienyl-η6-cumenyl-iron (1 +)-hexafluorophosphate (1-), etc.), JP-A-53-133428, Kosho 57-1819, 57-60 No. 96, US Pat. No. 3,615,455, and the like.

Examples of the ketone compound include benzophenone, 2-methylbenzophenone, 3-methylbenzophenone, 4-methylbenzophenone, 4-methoxybenzophenone, 2-chlorobenzophenone, 4-chlorobenzophenone, 4-bromobenzophenone, 2-carboxybenzophenone, 2-ethoxycarbonylbenzolphenone, benzophenonetetracarboxylic acid or tetramethyl ester thereof, 4,4′-bis (dialkylamino) benzophenone (for example, 4,4′-bis (dimethylamino) benzophenone, 4,4′- Bisdicyclohexylamino) benzophenone, 4,4′-bis (diethylamino) benzophenone, 4,4′-bis (dihydroxyethylamino) benzophenone, 4-methoxy-4′-dimethylaminobenzophen Non, 4,4′-dimethoxybenzophenone, 4-dimethylaminobenzophenone, 4-dimethylaminoacetophenone, benzyl, anthraquinone, 2-t-butylanthraquinone, 2-methylanthraquinone, phenanthraquinone, xanthone, thioxanthone, 2-chloro -Thioxanthone, 2,4-diethylthioxanthone, fluorenone, 2-benzyl-dimethylamino-1- (4-morpholinophenyl) -1-butanone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino -1-propanone, 2-hydroxy - 2-methyl- [4- (1-methylvinyl) phenyl] propanol oligomer, benzoin, benzoin ethers (for example, benzoin methyl ether, benzoin ethyl ether, benzoin pro Pyrether, benzoin isopropyl ether, benzoin phenyl ether, benzyldimethyl ketal), acridone, chloroacridone, N-methylacridone, N-butylacridone, N-butyl-chloroacridone and the like.
As solid content in solid content of the said composition for pattern formation of the said photoinitiator, 0.1-30 mass% is preferable, 0.5-20 mass% is more preferable, 0.5-15 mass % Is particularly preferred. When the solid content is less than 0.1% by mass, the sensitivity is insufficient and the film hardness after curing tends to be low, and when it exceeds 30% by mass, precipitation from the photosensitive layer is likely to occur. May be.

In addition to the photopolymerization initiator, a sensitizer can be added for the purpose of adjusting the exposure sensitivity and the photosensitive wavelength in the exposure of the photosensitive layer.
The sensitizer can be appropriately selected by visible light, ultraviolet light, visible light laser, or the like as a light irradiation means described later.
The sensitizer is excited by active energy rays and interacts with other substances (for example, radical generator, acid generator, etc.) (for example, energy transfer, electron transfer, etc.), thereby generating radicals, acids, etc. It is possible to generate a useful group of

The sensitizer is not particularly limited and may be appropriately selected from known sensitizers. For example, known polynuclear aromatics (for example, pyrene, perylene, triphenylene), xanthenes (for example, , Fluorescein, eosin, erythrosine, rhodamine B, rose bengal), cyanines (eg, indocarbocyanine, thiacarbocyanine, oxacarbocyanine), merocyanines (eg, merocyanine, carbomerocyanine), thiazines (eg, thionine, Methylene blue, toluidine blue), acridines (eg, acridine orange, chloroflavin, acriflavine), anthraquinones (eg, anthraquinone), squariums (eg, squalium), acridones (eg, acridone, chloroacrine) Don, N-methylacridone, N-butylacridone, N-butyl-chloroacridone, etc.), coumarins (for example, 3- (2-benzofuroyl) -7-diethylaminocoumarin, 3- (2-benzofuroyl)- 7- (1-pyrrolidinyl) coumarin, 3-benzoyl-7-diethylaminocoumarin, 3- (2-methoxybenzoyl) -7-diethylaminocoumarin, 3- (4-dimethylaminobenzoyl) -7-diethylaminocoumarin, 3,3 '-Carbonylbis (5,7-di-n-propoxycoumarin), 3,3'-carbonylbis (7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3- (2-furoyl) -7- Diethylaminocoumarin, 3- (4-diethylaminocinnamoyl) -7-diethylaminocoumarin, - methoxy-3- (3-pyridylcarbonyl) coumarin, 3-benzoyl-5,7-dipropoxycoumarin etc. elevation Gerare other in JP-A-5-19475, JP-A-7-271028, JP 2002- No. 363206, JP-A No. 2002-363207, JP-A No. 2002-363208, JP-A No. 2002-363209, and the like.

  Examples of the combination of the photopolymerization initiator and the sensitizer include, for example, an electron transfer start system described in JP-A-2001-305734 [(1) an electron donating initiator and a sensitizing dye, (2) A combination of an electron-accepting initiator and a sensitizing dye, (3) an electron-donating initiator, a sensitizing dye and an electron-accepting initiator (ternary initiation system), and the like.

  As content of the said sensitizer, 0.05-30 mass% is preferable with respect to all the components in the said composition for pattern formation, 0.1-20 mass% is more preferable, 0.2-10 mass % Is particularly preferred. When the content is less than 0.05% by mass, the sensitivity to active energy rays is reduced, the exposure process takes time, and productivity may be reduced. The sensitizer may be precipitated from the photosensitive layer.

The said photoinitiator may be used individually by 1 type, and may use 2 or more types together.
Particularly preferred examples of the photopolymerization initiator include halogenated carbonization having the phosphine oxides, the α-aminoalkyl ketones, and the triazine skeleton capable of supporting laser light having a wavelength of 405 nm in the exposure described later. Examples include a composite photoinitiator, a hexaarylbiimidazole compound, or titanocene, which is a combination of a hydrogen compound and an amine compound as a sensitizer described later.

  As content in the said pattern formation composition of the said photoinitiator, 0.1-30 mass% is preferable, 0.5-20 mass% is more preferable, 0.5-15 mass% is especially preferable.

-Other ingredients-
Examples of the other components include thermal crosslinking agents, thermal polymerization inhibitors, plasticizers, color formers, coloring pigments, extender pigments, and the like, and adhesion promoters to the substrate surface, thermosetting accelerators, and other components. Auxiliaries (for example, conductive particles, fillers, antifoaming agents, flame retardants, leveling agents, peeling accelerators, antioxidants, fragrances, surface tension adjusting agents, chain transfer agents, etc.) may be used in combination. By appropriately containing these components, properties such as the stability, photographic properties, and film properties of the intended photosensitive composition or photosensitive transfer material can be adjusted.

-Thermal crosslinking agent-
The pattern forming composition preferably includes a thermal crosslinking agent.
There is no restriction | limiting in particular as said thermal crosslinking agent, Although it can select suitably according to the objective, It is preferable that it is alkylation methylol melamine.
In addition, as the thermal crosslinking agent, in order to improve the strength of the cured film on the surface of the photosensitive layer formed by using the pattern forming composition, for example, an epoxy is used as long as it does not adversely affect developability and the like. A polymer insoluble in an aqueous alkali solution such as a resin or a melamine resin can be added. These may be used individually by 1 type and may use 2 or more types together. Among these, alkylated methylol melamine is preferable and hexamethylated methylol melamine is particularly preferable in that it has good storage stability and is effective in improving the surface hardness of the photosensitive layer or the film strength itself of the cured film.
1-40 mass% is preferable, as for solid content in the said composition for pattern formation of the said thermal crosslinking agent, 3-30 mass% is more preferable, and 5-25 mass% is especially preferable. When the solid content is less than 1% by mass, improvement in the film strength of the cured film is not recognized, and when it exceeds 40% by mass, the developability and the exposure sensitivity may be lowered.

Examples of the thermal polymerization inhibitor include 4-methoxyphenol, hydroquinone, alkyl or aryl-substituted hydroquinone, t-butylcatechol, pyrogallol, 2-hydroxybenzophenone, 4-methoxy-2-hydroxybenzophenone, cuprous chloride, phenothiazine. , Chloranil, naphthylamine, β-naphthol, 2,6-di-tert-butyl-4-cresol, 2,2′-methylenebis (4-methyl-6-tert-butylphenol), pyridine, nitrobenzene, dinitrobenzene, picric acid 4-toluidine, methylene blue, copper and organic chelating agent reactant, methyl salicylate, and phenothiazine, nitroso compound, chelate of nitroso compound and Al, and the like.
As content of the said thermal-polymerization inhibitor, 0.001-5 mass% is preferable with respect to the said polymeric compound, 0.005-2 mass% is more preferable, 0.01-1 mass% is especially preferable. When the content is less than 0.001% by mass, the stability during storage may decrease, and when it exceeds 5% by mass, the sensitivity to active energy rays may decrease.
When the composition for pattern formation contains the thermal polymerization inhibitor, thermal polymerization or temporal polymerization of the polymerizable compound can be prevented.

There is no restriction | limiting in particular as said coloring pigment, According to the objective, it can select suitably, For example, Victoria pure blue BO (CI. 42595), auramine (CI. 41000), fat black HB (CI. 26150), Monolite Yellow GT (CI Pigment Yellow 12), Permanent Yellow GR (CI Pigment Yellow 17), Permanent Yellow HR (CI Pigment Yellow HR). Yellow 83), Permanent Carmine FBB (CI Pigment Red 146), Hoster Balm Red ESB (CI Pigment Violet 19), Permanent Ruby FBH (CI Pigment Red 11) Fastel Pink B Supra (CI Pigment Red 81) Monastral Fa Strike Blue (C.I. Pigment Blue 15), mono Light Fast Black B (C.I. Pigment Black 1), carbon, C. I. Pigment red 97, C.I. I. Pigment red 122, C.I. I. Pigment red 149, C.I. I. Pigment red 168, C.I. I. Pigment red 177, C.I. I. Pigment red 180, C.I. I. Pigment red 192, C.I. I. Pigment red 215, C.I. I. Pigment green 7, C.I. I. Pigment green 36, C.I. I. Pigment blue 15: 1, C.I. I. Pigment blue 15: 4, C.I. I. Pigment blue 15: 6, C.I. I. Pigment blue 22, C.I. I. Pigment blue 60, C.I. I. Pigment blue 64 and the like. These may be used alone or in combination of two or more.
The solid content in the solid content of the pattern forming composition of the color pigment can be determined in consideration of the exposure sensitivity and resolution of the photosensitive layer at the time of pattern formation, depending on the type of the color pigment. Generally, 0.05 to 10% by mass is preferable, 0.075 to 8% by mass is more preferable, and 0.1 to 5% by mass is particularly preferable.

  The color former is not particularly limited and may be appropriately selected depending on the intended purpose. For example, tris (4-dimethylaminophenyl) methane (leucocrystal violet), tris (4-diethylaminophenyl) methane, tris ( 4-dimethylamino-2-methylphenyl) methane, tris (4-diethylamino-2-methylphenyl) methane, bis (4-dibutylaminophenyl)-[4- (2-cyanoethyl) methylaminophenyl] methane, bis ( Aminotriarylmethanes such as 4-dimethylaminophenyl) -2-quinolylmethane and tris (4-dipropylaminophenyl) methane; 3,6-bis (dimethylamino) -9-phenylxanthine, 3-amino-6- Dimethylamino-2-methyl-9- (2-chlorophenyl) xa Aminoxanthines such as tin; aminothioxanthenes such as 3,6-bis (diethylamino) -9- (2-ethoxycarbonylphenyl) thioxanthene and 3,6-bis (dimethylamino) thioxanthene; Amino-9,10-dihydroacridines such as bis (diethylamino) -9,10-dihydro-9-phenylacridine, 3,6-bis (benzylamino) -9,10-dividro-9-methylacridine; Aminophenoxazines such as 7-bis (diethylamino) phenoxazine; aminophenothiazines such as 3,7-bis (ethylamino) phenothiazone; 3,7-bis (diethylamino) -5-hexyl-5,10-dihydrophenazine Aminodihydrophenazines such as bis (4-dimethylaminophenyl) ani Aminophenylmethanes such as nomethane; aminohydrocinnamic acids such as 4-amino-4′-dimethylaminodiphenylamine, 4-amino-α, β-dicyanohydrocinnamic acid methyl ester; 1- (2-naphthyl)- Hydrazines such as 2-phenylhydrazine; amino-2,3-dihydroanthraquinones such as 1,4-bis (ethylamino) -2,3-dihydroanthraquinones; phenethyl such as N, N-diethyl-4-phenethylaniline Anilines; acyl derivatives of leuco dyes containing basic NH such as 10-acetyl-3,7-bis (dimethylamino) phenothiazine; oxidizable hydrogen such as tris (4-diethylamino-2-tolyl) ethoxycarbonylmentane A leuco-like compound that is not possessed but can be oxidized to a coloring compound; Dyes; organic amines that can be oxidized to a colored form as described in US Pat. Nos. 3,042,515 and 3,042,517 (eg, 4,4′-ethylenediamine, diphenylamine, N , N-dimethylaniline, 4,4′-methylenediaminetriphenylamine, N-vinylcarbazole), and among these, triarylmethane compounds such as leucocrystal violet are preferable.

Furthermore, it is generally known that the color former is combined with a halogen compound for the purpose of coloring the leuco body.
Examples of the halogen compound include halogenated hydrocarbons (for example, carbon tetrabromide, iodoform, ethylene bromide, methylene bromide, amyl bromide, isoamyl bromide, amyl iodide, isobutylene bromide, butyl iodide, Diphenylmethyl bromide, hexachloroethane, 1,2-dibromoethane, 1,1,2,2-tetrabromoethane, 1,2-dibromo-1,1,2-trichloroethane, 1,2,3-tribromopropane 1-bromo-4-chlorobutane, 1,2,3,4-tetrabromobutane, tetrachlorocyclopropene, hexachlorocyclopentadiene, dibromocyclohexane, 1,1,1-trichloro-2,2-bis (4 -Chlorophenyl) ethane and the like; halogenated alcohol compounds (for example, 2,2,2-trichloroethanol, Libromoethanol, 1,3-dichloro-2-propanol, 1,1,1-trichloro-2-propanol, di (iodohexamethylene) aminoisopropanol, tribromo-t-butyl alcohol, 2,2,3-trichlorobutane -1,4-diol and the like; halogenated carbonyl compounds (for example, 1,1-dichloroacetone, 1,3-dichloroacetone, hexachloroacetone, hexabromoacetone, 1,1,3,3-tetrachloroacetone, 1, 1,1-trichloroacetone, 3,4-dibromo-2-butanone, 1,4-dichloro-2-butanone-dibromocyclohexanone, etc .; halogenated ether compounds (eg 2-bromoethyl methyl ether, 2-bromoethyl ethyl) Ether, di (2-bromoethyl) ether, 1,2 Halogenated ester compounds (eg, bromoethyl acetate, ethyl trichloroacetate, trichloroethyl trichloroacetate, homopolymers and copolymers of 2,3-dibromopropyl acrylate, trichloroethyl dibromopropionate, α, β) Halogenated amide compounds (for example, chloroacetamide, bromoacetamide, dichloroacetamide, trichloroacetamide, tribromoacetamide, trichloroethyltrichloroacetamide, 2-bromoisopropionamide, 2,2,2- Trichloropropionamide, N-chlorosuccinimide, N-bromosuccinimide, etc.); compounds having sulfur or phosphorus (for example, tribromomethylphenylsulfone, 4-ni B phenyl tribromomethyl sulfone, 4-chlorophenyl tribromomethyl sulfone, tris (2,3-dibromopropyl) phosphate, etc.), e.g., 2,4-bis (trichloromethyl) 6- phenyltriazole and the like. As the organic halogen compound, a halogen compound having two or more halogen atoms bonded to the same carbon atom is preferable, and a halogen compound having three halogen atoms per carbon atom is more preferable. The said organic halogen compound may be used individually by 1 type, and may use 2 or more types together. Among these, tribromomethylphenyl sulfone and 2,4-bis (trichloromethyl) -6-phenyltriazole are preferable.

  The content of the color former is preferably 0.01 to 20% by mass, more preferably 0.05 to 10% by mass, and particularly preferably 0.1 to 5% by mass with respect to all components of the photosensitive layer. Moreover, as content of the said halogen compound, 0.001-5 mass% is preferable with respect to all the components of the said photosensitive layer, and 0.005-1 mass% is more preferable.

The extender pigment is not particularly limited and may be appropriately selected from known ones. Examples thereof include kaolin, barium sulfate, barium titanate, silicon oxide powder, finely divided silicon oxide, amorphous silica, and crystalline silica. And organic or inorganic fine particles such as fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, and mica.
The average particle size of the extender is preferably less than 10 μm, and more preferably 3 μm or less. When the average particle size is 10 μm or more, resolution may be deteriorated due to light scattering.
There is no restriction | limiting in particular as said organic fine particle, According to the objective, it can select suitably, For example, a melamine resin, a benzoguanamine resin, a crosslinked polystyrene resin etc. are mentioned. Further, silica having an average particle diameter of 1 to 5 μm and an oil absorption of about 100 to 200 m ² / g, spherical porous fine particles made of a crosslinked resin, and the like can be used.
5-60 mass% is preferable, as for the addition amount of the said extender, 10-50 mass% is more preferable, and 15-45 mass% is especially preferable. When the addition amount is less than 5% by mass, the linear expansion coefficient may not be sufficiently reduced. When the addition amount exceeds 60% by mass, when the cured film is formed on the photosensitive layer surface, The film quality becomes brittle, and when a wiring is formed using a pattern, the function of the wiring as a protective film may be impaired.
When the pattern forming composition contains the extender pigment, it is possible to improve the surface hardness of the pattern, to keep the coefficient of linear expansion low, or to keep the dielectric constant and dielectric loss tangent of the cured film itself low. It becomes.

Preferred examples of the adhesion promoter include adhesion promoters described in JP-A Nos. 5-11439, 5-341532, and 6-43638. Specifically, benzimidazole, benzoxazole, benzthiazole, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzthiazole, 3-morpholinomethyl-1-phenyl-triazole-2-thione, 3-morpholino Methyl-5-phenyl-oxadiazole-2-thione, 5-amino-3-morpholinomethyl-thiadiazole-2-thione, and 2-mercapto-5-methylthio-thiadiazole, triazole, tetrazole, benzotriazole, carboxybenzotriazole Amino group-containing benzotriazole, silane coupling agents, and the like.
As content of the said adhesion promoter, 0.001 mass%-20 mass% are preferable with respect to all the components in the said composition for pattern formation, 0.01-10 mass% is more preferable, 0.1 mass % To 5% by mass is particularly preferable.
When the composition for pattern formation contains the adhesion promoter, the adhesion between each layer or the adhesion between the photosensitive layer and the substrate can be improved.
Furthermore, the pattern forming composition may contain a thermosetting accelerator.
As content of the said thermosetting accelerator, 0.005 mass%-20 mass% are preferable with respect to all the components in the said pattern formation composition, 0.01-15 mass% is more preferable, and 0.025 A mass% to 12 mass% is particularly preferred.

  There is no restriction | limiting in particular as thickness of the said photosensitive layer in the said pattern formation material, Although it can select suitably according to the objective, For example, 3-100 micrometers is preferable, 5-70 micrometers is more preferable, 10-50 micrometers is especially preferable. preferable.

  There is no restriction | limiting in particular as a preparation method of the said pattern formation material, According to the objective, it can select suitably, For example, the composition which comprises the said oxygen barrier layer, and the said cushion layer are comprised on the said support body. At least one of the compositions is dissolved, emulsified or dispersed in water or a solvent to prepare a solution, and the solution is applied directly on the support and dried, whereby at least one of the oxygen barrier layer and the cushion layer. Then, the photosensitive composition solution is prepared in the same manner, and the pattern forming composition solution is applied onto at least one of the oxygen barrier layer and the cushion layer and dried. The oxygen barrier layer formed on the support, formed by applying the pattern-forming composition solution on another temporary support and drying it; And a method of transferring at least on one of cushion layer.

  There is no restriction | limiting in particular as said solvent, According to the objective, it can select suitably, For example, alcohols, such as methanol, ethanol, n-propanol, isopropanol, n-butanol, sec-butanol, n-hexanol; acetone , Ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone; esters such as ethyl acetate, butyl acetate, n-amyl acetate, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate, and methoxypropyl acetate Aromatic hydrocarbons such as toluene, xylene, benzene, and ethylbenzene; halogenated carbonization such as carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroethane, methylene chloride, and monochlorobenzene Motorui; tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 1-ethers such as methoxy-2-propanol; dimethylformamide, dimethylacetamide, dimethyl sulfoxide, and sulfolane. These may be used alone or in combination of two or more. Moreover, you may add a well-known surfactant.

The coating method is not particularly limited and can be appropriately selected depending on the purpose. For example, using a spin coater, a slit spin coater, a roll coater, a die coater, a curtain coater, etc. The method of apply | coating is mentioned.
The drying conditions vary depending on each component, the type of solvent, the use ratio, and the like, but are usually about 60 to 110 ° C. for about 30 seconds to 15 minutes.

Before the pattern forming material is laminated on the substrate, for example, the photosensitive layer is preferably covered with a protective film. The protective film is attached to the photosensitive layer side during transportation or the like to prevent and protect the photosensitive layer from being stained and damaged, and is peeled off when the pattern forming material is laminated on the substrate.
Examples of the protective film include those similar to the support, silicone paper, polyethylene, polypropylene laminated paper, polyolefin or polytetrafluoroethylene sheet, and among these, polyethylene film, polypropylene A film is preferred.
There is no restriction | limiting in particular as thickness of the said protective film, Although it can select suitably according to the objective, For example, 5-100 micrometers is preferable, 8-50 micrometers is more preferable, 10-40 micrometers is especially preferable.
When the protective film is used, the oxygen barrier layer and the support have an adhesive force A, the oxygen barrier layer and the photosensitive layer have an adhesive force B, and the photosensitive layer and the protective film have an adhesive force C. It is preferable that the relationship is the following formula, adhesive force B> adhesive force A> adhesive force C.

  Examples of the combination of the support and the protective film (support / protective film) include polyethylene terephthalate / polypropylene, polyethylene terephthalate / polyethylene, polyvinyl chloride / cellophane, polyimide / polypropylene, polyethylene terephthalate / polyethylene terephthalate, and the like. . Moreover, the relationship of the above adhesive forces can be satisfy | filled by surface-treating at least any one of a support body and a protective film. The surface treatment of the support may be performed in order to increase the adhesive force with the photosensitive layer. For example, coating of a primer layer, corona discharge treatment, flame treatment, ultraviolet irradiation treatment, high frequency irradiation treatment, glow treatment Examples thereof include a discharge irradiation process, an active plasma irradiation process, and a laser beam irradiation process.

Moreover, as a static friction coefficient of the said support body and the said protective film, 0.3-1.4 are preferable and 0.5-1.2 are more preferable.
When the coefficient of static friction is less than 0.3, it slips too much, so when it is made into a roll, winding deviation may occur. When it exceeds 1.4, it becomes difficult to wind into a good roll. Sometimes.

  The protective film may be surface-treated in order to adjust the adhesion between the protective film and the photosensitive layer. In the surface treatment, for example, an undercoat layer made of a polymer such as polyorganosiloxane, fluorinated polyolefin, polyfluoroethylene, or polyvinyl alcohol is formed on the surface of the protective film. The undercoat layer can be formed by applying the polymer coating solution to the surface of the protective film and then drying at 30 to 150 ° C. (especially 50 to 120 ° C.) for 1 to 30 minutes.

  The pattern forming material is preferably either a roll form or a laminated sheet form. For example, the pattern forming material is preferably wound around a cylindrical core, wound into a long roll, and stored. . There is no restriction | limiting in particular as length of the said elongate pattern formation material, For example, it can select suitably from the range of 10m-20,000m. Further, slitting may be performed so that the user can easily use, and a long body in the range of 100 m to 1,000 m may be formed into a roll. In this case, it is preferable that the support is wound up so as to be the outermost side. The roll-shaped pattern forming material may be slit into a sheet shape. When storing, from the viewpoint of protecting the end face and preventing edge fusion, it is preferable to install a separator (particularly moisture-proof and containing a desiccant) on the end face, and use a low moisture-permeable material for packaging. Is preferred.

The pattern forming material of the present invention can prevent light fogging under a safety light, has a small surface tackiness, good laminating property and handling property, excellent storage stability, excellent chemical resistance after development, surface It has a photosensitive layer on which a pattern forming composition that expresses hardness, heat resistance and the like is laminated. For this reason, it can be widely used for pattern formation of display members such as printed wiring boards, pillar materials, rib materials, spacers, partition walls, holograms, micromachines, proofs, etc., and is suitable for the pattern of the present invention and its formation method. Can be used.
In particular, since the thickness of the film of the pattern forming material of the present invention is uniform, the pattern is formed on the substrate more finely.

(pattern)
The pattern of the present invention is obtained by laminating the pattern forming material of the present invention on the surface of the substrate under at least one of heating and pressurization, exposing and developing by the pattern forming method of the present invention. It is done.
The pattern of the present invention is suitable for pattern formation of printed wiring boards, color filters, pillar materials, rib materials, spacers, partition members and other display members, holograms, micromachines, proofs, etc., and in particular, printed circuit boards and liquid crystals. It is preferable for a color filter for a display device (LCD).

(Pattern formation method)
The pattern forming method of the present invention includes at least a lamination step, an exposure step, and a development step, and further includes other steps that are appropriately selected.
As the pattern forming method, for example, a photosensitive layer is laminated on a base material, a layering step of covering the surface of the base material with a photo solder resist, an exposure step of exposing the photosensitive layer, and developing the photosensitive layer A pattern forming method of forming a predetermined pattern on the substrate by leaving the photosensitive layer in a predetermined pattern on the substrate.

  In the pattern forming method of the present invention, the pattern formed after the development step is preferably a method of forming at least one of a protective film and an interlayer insulating film.

[Lamination process]
The lamination step is a step of laminating the pattern forming material on the surface of the base material so that the photosensitive layer is on the surface side of the base material by at least one of heating and pressurization.

In addition, when the said pattern formation material has a protective film mentioned later, it is preferable to peel this protective film and to laminate | stack so that the said photosensitive layer may overlap with the said base material.
There is no restriction | limiting in particular as a pressure of the said pressurization, According to the objective, it can select suitably, For example, 0.01-1.0 MPa is preferable and 0.05-1.0 MPa is more preferable.

  There is no restriction | limiting in particular as an apparatus which performs at least any one of the said heating and pressurization, According to the objective, it can select suitably, For example, heat press, a heat roll laminator (For example, Taisei Laminator company make, VP-II). ), A vacuum laminator (for example, MVLP500, manufactured by Meiki Seisakusho) and the like are preferable.

<Base material>
The substrate used in the photosensitive layer forming step is not particularly limited, and can be appropriately selected from known materials having high surface smoothness to those having an uneven surface. The substrate (substrate) is preferably, specifically, a known printed wiring board forming substrate (for example, copper-clad laminate), a glass plate (for example, soda glass plate), a synthetic resin film, paper, A metal plate etc. are mentioned.

[Exposure process]
The exposure step is a step of peeling the support after the laminating step and then exposing the photosensitive layer.
By peeling off the support, it is possible to prevent a blurred image from being formed on an image formed on the pattern forming composition layer due to light scattering, refraction, or the like by the support. It is obtained by.
In the exposure step, light from the light irradiation means is modulated by a light modulation means having n picture elements for receiving and emitting light from the light irradiation means, and then the exit surface of the picture element is formed. A photosensitive layer laminated on the substrate by the laminating step by light passed through a microlens array in which microlenses having aspherical surfaces capable of correcting aberration due to distortion are arranged via the oxygen blocking layer. It is preferable to have a step of exposing.

In the exposure step, the light emitted from the light irradiation means is not particularly limited and may be appropriately selected depending on the purpose. For example, an electromagnetic wave that activates a photopolymerization initiator or a sensitizer, Examples include ultraviolet to visible light, electron beams, X-rays, and laser beams. Among these, laser beams that can perform on / off control of light in a short time and easily control light interference are preferable.
The wavelength of the ultraviolet to visible light is not particularly limited and may be appropriately selected depending on the purpose. However, in order to shorten the exposure time of the pattern forming composition, 330 to 650 nm is preferable, 395 to 415 nm is more preferable, and 405 nm is particularly preferable.
The light irradiation method by the light irradiation means is not particularly limited and can be appropriately selected according to the purpose. For example, a high pressure mercury lamp, a xenon lamp, a carbon arc lamp, a halogen lamp, a cold cathode tube for a copying machine, The method of irradiating with well-known light sources, such as LED and a semiconductor laser, is mentioned. In addition, it is preferable to synthesize and irradiate two or more light beams from these light sources, and to irradiate a laser beam (hereinafter sometimes referred to as “combined laser beam”) composed of two or more light beams. Is particularly preferred.
There is no restriction | limiting in particular as the irradiation method of the said combined laser beam, Although it can select suitably according to the objective, A laser irradiated from a several laser light source, a multimode optical fiber, and this several laser light source There is a method of forming and irradiating a combined laser beam with a collective optical system that collects light and couples it to the multimode optical fiber.

In the exposure step, the method for modulating light is not particularly limited as long as it is a method for modulating light by means of light modulation means having n number of pixel parts for receiving and emitting light from the light irradiation means. Although it can select suitably according to this, The method of controlling the arbitrary less than n image-element parts arrange | positioned continuously from n image element parts according to pattern information is mentioned suitably.
There is no restriction | limiting in particular as the number (n) of said picture element parts, According to the objective, it can select suitably.
The arrangement of the picture element portions in the light modulation means is not particularly limited and may be appropriately selected according to the purpose. For example, it is preferably arranged two-dimensionally and arranged in a lattice pattern. Is more preferable.
The light modulation method is not particularly limited and may be appropriately selected depending on the intended purpose. A preferable example is a method using a spatial light modulation element as the light modulation means.
The spatial light modulation element is not particularly limited and may be appropriately selected depending on the intended purpose. However, a digital micromirror device (DMD) or a MEMS (Micro Electro Mechanical Systems) type spatial light modulation element (SLM) may be used. A Special Light Modulator), an optical element that modulates transmitted light by an electro-optic effect (PLZT element), a liquid crystal light shutter (FLC), and the like. Among these, a DMD is particularly preferable.

In the exposure step, the light modulated by the modulation means is allowed to pass through a microlens array in which microlenses having aspherical surfaces capable of correcting aberrations due to distortion of the exit surface in the picture element portion are arranged.
The microlens arranged in the microlens array is not particularly limited as long as it has an aspheric surface, and can be appropriately selected according to the purpose. However, the microlens is a microlens having a toric surface. Preferably there is.
Further, in the exposure step, it is preferable that the light modulated by the modulation means is allowed to pass through an aperture array, a coupling optical system, other optical systems appropriately selected, and the like.

In the exposure step, the method for exposing the photosensitive layer is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include digital exposure and analog exposure, but digital exposure is preferred. .
The digital exposure method is not particularly limited and may be appropriately selected depending on the purpose. For example, the digital exposure method is performed using laser light modulated according to a control signal generated based on predetermined pattern information. Is preferred.
Furthermore, in the exposure step, the method for exposing the photosensitive layer is not particularly limited and can be appropriately selected according to the purpose. From the viewpoint of enabling high-speed exposure in a short time, It is preferably carried out while relatively moving the photosensitive layer, and particularly preferably used in combination with the digital micromirror device (DMD).

  A pattern forming apparatus suitably used in the pattern forming method of the present invention will be described below with reference to the drawings.

FIG. 7 is a schematic perspective view showing the appearance of a pattern forming apparatus preferably used in the pattern forming method of the present invention.
As shown in FIG. 7, the pattern forming apparatus including the light modulation means adsorbs the sheet-like pattern forming material 150 on the upper surface of a thick plate-like installation table 156 supported by four legs 154. A flat plate-like stage 152 is provided.
The stage 152 is arranged so that the longitudinal direction thereof faces the stage moving direction, and is supported by a guide 158 formed on the upper surface of the installation table 156 so as to be reciprocally movable. The pattern forming apparatus has a drive device (not shown) for driving the stage 152 along the guide 158.

  A downward C-shaped gate 160 is provided at the center of the installation table 156 so as to straddle the movement path of the stage 152. Each end portion of the gate 160 is fixed to both side surfaces in the longitudinal center portion of the installation table 156. A scanner 162 is provided on one side of the gate 160, and a plurality of (for example, two) detection sensors 164 that detect the front and rear ends of the pattern forming material 150 are provided on the other side. ing. The scanner 162 and the detection sensor 164 are respectively attached to the gate 160 and fixedly arranged above the moving path of the stage 152. The scanner 162 and the detection sensor 164 are connected to a controller (not shown) that controls them.

FIG. 8 is a schematic perspective view showing the configuration of the scanner. FIG. 9A is a plan view showing an exposed region formed on the photosensitive layer, and FIG. 9B is a diagram showing an arrangement of exposure areas by the exposure head.
As shown in FIGS. 8 and 9B, the scanner 162 includes a plurality of (for example, 14) exposure heads 166 arranged in a substantially matrix of m rows and n columns (for example, 3 rows and 5 columns). ing. In this example, four exposure heads 166 are arranged in the third row in relation to the width of the pattern forming material 150. In addition, when showing each exposure head arranged in the m-th row and the n-th column, it is expressed as an exposure head 166 _mn .
An exposure area 168 by the exposure head 166 has a rectangular shape with a short side in the sub-scanning direction. Accordingly, as the stage 152 moves, a strip-shaped exposed region 170 is formed in the pattern forming material 150 for each exposure head 166. In addition, when showing the exposure area by each exposure head arranged in the m-th row and the n-th column, it is expressed as an exposure area 168 _mn .

Further, as shown in FIGS. 9A and 9B, each of the exposure heads in each row arranged in a line so that the strip-shaped exposed regions 170 are arranged in the direction orthogonal to the sub-scanning direction without gaps. These are arranged with a predetermined interval (natural number times the long side of the exposure area, twice in this example) in the arrangement direction. Therefore, can not be exposed portion between the exposure area _{168 11} in the first row and the exposure area _{168 12,} it can be exposed by the second row of the exposure area _{168 21} and the exposure area _{168 31} in the third row.

FIG. 10 is a perspective view showing a schematic configuration of the exposure head.
As shown in FIG. 10, each of the exposure heads 166 _{11 to} 166 _mn serves as the light modulation means (spatial light modulation element for modulating each pixel) that modulates a light beam according to pattern information. A digital micromirror device (hereinafter also referred to as “DMD”) 50 manufactured by Instruments Co., Ltd. A fiber array light source 66 as a light irradiating means 66 provided with laser emitting portions 68 arranged in a line along a direction corresponding to the side direction, and a laser beam emitted from the fiber array light source 66 are corrected and placed on the DMD. A condensing lens system 67, a mirror 69 that reflects laser light transmitted through the lens system 67 toward the DMD 50, and a laser reflected by the DMD 50 The B, and an image forming optical system 51 forms an image on the pattern forming material 150. In FIG. 10, the lens system 67 is schematically shown.

FIG. 12 shows a controller that controls the DMD based on the pattern information.
As shown in FIG. 12, the DMD 50 is connected to a controller 302 having a data processing unit, a mirror drive control unit, and the like. The data processing unit of the controller 302 generates a control signal for driving and controlling each micromirror in the area to be controlled by the DMD 50 for each exposure head 166 based on the input pattern information. The area to be controlled will be described later. The mirror drive control unit controls the angle of the reflection surface of each micromirror of the DMD 50 for each exposure head 166 based on the control signal generated by the pattern information processing unit.

FIG. 1 is a partially enlarged view showing a configuration of a digital micromirror device (DMD) as the light modulation means.
As shown in FIG. 1, in the DMD 50, a large number (for example, 1024 × 768) of micromirrors (micromirrors) 62 each constituting a pixel (pixel) are arranged on a SRAM cell (memory cell) 60 in a lattice shape. This is a mirror device arranged in a row. In each pixel, a micromirror 62 supported by a support column is provided at the top, and a material having high reflectance such as aluminum is deposited on the surface of the micromirror 62. The reflectance of the micromirror 62 is 90% or more, and the arrangement pitch is 13.7 μm as an example in both the vertical and horizontal directions. A silicon gate CMOS SRAM cell 60 manufactured in a normal semiconductor memory manufacturing line is disposed directly below the micromirror 62 via a support including a hinge and a yoke. The entire structure is monolithically configured. ing.

2A and 2B are diagrams for explaining the operation of the DMD.
When a digital signal is written in the SRAM cell 60 of the DMD 50, the micromirror 62 supported by the support is tilted in a range of ± α degrees (for example, ± 12 degrees) with respect to the substrate side on which the DMD 50 is disposed with the diagonal line as the center. It is done. 2A shows a state in which the micromirror 62 is tilted to + α degrees when the micromirror 62 is in an on state, and FIG. 2B shows a state in which the micromirror 62 is tilted to −α degrees that is in an off state.
Therefore, by controlling the tilt of the micromirror 62 in each pixel of the DMD 50 according to the pattern information, the laser light incident on the DMD 50 is reflected in the tilt direction of each micromirror 62.
FIG. 1 shows an example of a state in which the micromirror 62 is controlled to + α degrees or −α degrees. On / off control of each micromirror 62 is performed by the controller 302 connected to the DMD 50. A light absorber (not shown) is arranged in the direction in which the laser beam B reflected by the micromirror 62 in the off state travels.

The DMD 50 is preferably arranged with a slight inclination so that the short side forms a predetermined angle θ (for example, 0.1 ° to 5 °) with the sub-scanning direction.
3A shows the scanning trajectory of the reflected light image (exposure beam) 53 by each micromirror when the DMD 50 is not tilted, and FIG. 3B shows the scanning trajectory of the exposure beam 53 when the DMD 50 is tilted. Show.
As shown in FIG. 3B, the DMD 50 has a plurality of micromirror arrays (for example, 756 pairs) arranged in the short direction, in which a large number (for example, 1024) of micromirrors are arranged in the longitudinal direction. and which is, by inclining the DMD 50, the pitch P ₂ of the scanning locus of the exposure beams 53 from each micromirror (scan line), it becomes narrower than the pitch P ₁ of the scanning line in the case of not tilting the DMD 50, significant resolution Can be improved. On the other hand, the inclination angle of the DMD 50 is small, the scanning width _{W 2} in the case of tilting the DMD 50, which is substantially equal to the scanning width _{W 1} when not inclined DMD 50.

Next, a method for increasing the modulation speed in the optical modulation means (hereinafter referred to as “high-speed modulation”) will be described.
When the laser light B is irradiated from the fiber array light source 66 to the DMD 50, the laser light emitted from the fiber array light source 66 is turned on and off for each pixel, and the pattern forming material 150 has approximately the same number of pixels as the DMD 50 used. Exposure is performed in elementary units (exposure area 168). Further, when the pattern forming material 150 is moved at a constant speed together with the stage 152, the pattern forming material 150 is sub-scanned in the direction opposite to the stage moving direction by the scanner 162, and a strip-shaped exposed region 170 is provided for each exposure head 166. Is formed.
Here, the data processing speed of the entire DMD 50 is limited, and the modulation speed per line is determined in proportion to the number of pixels to be used. Therefore, one line can be obtained by using only a part of the micromirror array. The modulation speed per hit is increased. On the other hand, in the case of an exposure method in which the exposure head is continuously moved relative to the exposure surface, it is not necessary to use all the pixels in the sub-scanning direction.
In the DMD 50, 768 micromirror rows in which 1024 micromirrors are arranged in the main scanning direction are arranged in the subscanning direction, but a part of micromirror rows (eg, 1024 × 256 rows) is arranged by the controller 302. Only is controlled to drive.
4 (A) and 4 (B) are diagrams showing areas where DMD is used.
As shown in FIG. 4 (A), the DMD use area may be a micromirror array arranged at the center of the DMD 50. As shown in FIG. 4 (B), the end of the DMD 50 may be used. Arranged micromirror rows may be used. In addition, when a defect occurs in some of the micromirrors, the micromirror array to be used may be appropriately changed depending on the situation, such as using a micromirror array in which no defect has occurred.
For example, in the case of using only 384 sets out of 768 sets of micromirror arrays, the modulation can be performed twice as fast per line as compared with the case of using all 768 sets. Also, when only 256 pairs are used in the 768 sets of micromirror arrays, modulation can be performed three times faster per line than when all 768 sets are used.

  As described above, according to the pattern forming method of the present invention, the micromirror array in which 1,024 micromirrors are arranged in the main scanning direction includes the DMD in which 768 sets are arranged in the subscanning direction. By controlling so that only a part of the micromirror rows are driven by the controller, the modulation rate per line becomes faster than when all the micromirror rows are driven.

  In addition, an example in which the DMD micromirror is partially driven has been described, but the length of the direction corresponding to the predetermined direction is reflected on the substrate longer than the length of the direction intersecting the predetermined direction according to the control signal. Even if a long and narrow DMD in which a large number of micromirrors capable of changing the surface angle are arranged in a two-dimensional manner is used, the number of micromirrors for controlling the angle of the reflecting surface is reduced. Can do.

As the exposure method, as shown in FIG. 5, the entire surface of the pattern forming material 150 may be exposed by a single scan in the X direction by a scanner 162.
Further, as the exposure method, as shown in FIGS. 6A and 6B, after the pattern forming material 150 is scanned in the X direction by the scanner 162, the scanner 162 is moved by one step in the Y direction. The entire surface of the pattern forming material 150 may be exposed by a plurality of scans by repeating scanning and movement, such as scanning in the direction.

  The exposure is performed on a partial area of the photosensitive layer to cure the partial area, and uncured areas other than the cured partial area are removed in a development step described later. A pattern is formed.

Next, the lens system 67 and the imaging optical system 51 will be described.
FIG. 11 is a cross-sectional view in the multiple scanning direction along the optical axis showing the details of the configuration of the exposure head in FIG.
As shown in FIG. 11, the lens system 67 includes a condensing lens 71 that condenses laser light B as illumination light emitted from the fiber array light source 66, and a rod that is inserted in the optical path of the light that has passed through the condensing lens 71. And an imaging lens 74 arranged in front of the rod integrator 72, that is, on the mirror 69 side.
The condensing lens 71, the rod integrator 72, and the imaging lens 74 cause the laser light emitted from the fiber array light source 66 to enter the DMD 50 as a light beam that is close to parallel light and has a uniform beam cross-sectional intensity.

  The laser beam B emitted from the lens system 67 is reflected by the mirror 69 and irradiated to the DMD 50 via the TIR (total reflection) prism 70. In FIG. 10, the TIR prism 70 is omitted.

  As shown in FIG. 11, the imaging optical system 51 includes a first imaging optical system including lens systems 52 and 54, a second imaging optical system including lens systems 57 and 58, and these imaging optical systems. And an aperture array 59. The microlens array 55 is inserted between the microlens array 55 and the aperture array 59.

The microlens array 55 is formed by two-dimensionally arranging a large number of microlenses 55a corresponding to the pixels of the DMD 50. In this example, as will be described later, only 1024 × 256 rows of the 1024 × 768 rows of micromirrors of the DMD 50 are driven, and accordingly, 1024 × 256 rows of microlenses 55a are arranged.
The arrangement pitch of the micro lenses 55a is 41 μm in both the vertical direction and the horizontal direction. The focal length of the micro lens 55a is 0.19 mm, and the NA (numerical aperture) is 0.11.
Further, the microlens 55a is formed from the optical glass BK7.
The beam diameter of the laser beam B at the position of each microlens 55a is 41 μm.

  In the aperture array 59, a large number of apertures (openings) 59a corresponding to the respective microlenses 55a of the microlens array 55 are formed. The diameter of each aperture 59a is 10 μm.

The first imaging optical system forms an image on the microlens array 55 by enlarging the image by the DMD 50 three times.
The second imaging optical system enlarges the image that has passed through the microlens array 55 by 1.6 times, and forms and projects the image on the pattern forming material 150.
Accordingly, in the entire optical system, an image formed by the DMD 50 is magnified 4.8 times and formed and projected on the pattern forming material 150.

  A prism pair 73 is disposed between the second imaging optical system and the pattern forming material 150. By moving the prism pair 73 in the vertical direction in FIG. 11, an image on the pattern forming material 150 is obtained. The focus can be adjusted. In the figure, the pattern forming material 150 is sub-scanned in the direction of arrow F.

  Next, the microlens array, the aperture array, the imaging optical system, and the like will be described with reference to the drawings.

FIG. 13A is a cross-sectional view along the optical axis showing the configuration of the exposure head.
As shown in FIG. 13A, the exposure head includes a light irradiating means 144 for irradiating the DMD 50 with laser light, and a lens system (imaging optical system) 454 for enlarging the laser light reflected by the DMD 50 to form an image. 458, a microlens array 472 in which a large number of microlenses 474 are arranged corresponding to each pixel portion of the DMD 50, and an aperture array 476 in which a large number of apertures 478 are provided corresponding to each microlens of the microlens array 472. , And lens systems (imaging optical systems) 480 and 482 for forming an image of the laser beam that has passed through the aperture on the exposed surface 56.

FIG. 14 is a diagram showing a result of measuring the flatness of the reflecting surface of the micromirror 62 constituting the DMD 50.
In FIG. 14, the same height positions of the reflecting surfaces are shown connected by contour lines, and the pitch of the contour lines is 5 nm. In the drawing, the x direction and the y direction are two diagonal directions of the micromirror 62, and the micromirror 62 rotates around the rotation axis extending in the y direction as described above.
FIGS. 15A and 15B show the height position displacement of the reflecting surface of the micromirror 62 along the x direction and the y direction in FIG. 14, respectively.
As shown in FIGS. 14 and 15, there is distortion on the reflection surface of the micromirror 62, and when attention is particularly paid to the center of the mirror, distortion in one diagonal direction (y direction) is different from that in the other diagonal line. It is larger than the distortion in the direction (x direction). For this reason, the problem that the shape in the condensing position of the laser beam B condensed with the micro lens 55a of the micro lens array 55 may be distorted may occur.

FIGS. 16A and 16B are views showing the front and side shapes of the entire microlens array 55, respectively.
As shown in FIG. 16A, the microlens array 55 is configured by arranging microlenses 55a in parallel in the horizontal direction and 1024 rows and in the vertical direction corresponding to the micromirrors 62 of the DMD 50, respectively.
The long side dimension of the microlens array 55 is 50 mm, and the short side dimension is 20 mm.
In FIG. 9A, the arrangement order of the micro lenses 55a is indicated by j for the horizontal direction and k for the vertical direction.

FIGS. 17A and 17B are diagrams showing a front shape and a side shape of the microlens constituting the microlens array. Note that FIG. 17A also shows the contour lines of the microlens 55a.
As shown in FIGS. 17A and 17B, the end surface of the microlens 55a on the light emission side has an aspherical shape that corrects aberration due to distortion of the reflection surface of the micromirror 62.
Specifically, the aspherical microlens 55a is a toric lens having a radius of curvature Rx in the x direction of −0.125 mm and a radius of curvature Ry in the y direction of −0.1 mm.
FIG. 18 is a schematic diagram showing a condensing state by the microlens in one cross section (A) and another cross section (B).
As shown in FIG. 18, since a toric lens having an aspherical end surface on the light emission side is used as the microlens 55a constituting the microlens array, the laser beam B in a cross section parallel to the x and y directions is used. In the light condensing state, when the parallel cross section in the x direction is compared with the parallel cross section in the y direction, the radius of curvature of the microlens 55a is smaller in the latter cross section, and the focal length becomes shorter. .

The shape of the microlens 55a may be a secondary aspherical shape or a higher order (4th order, 6th order,...) Aspherical shape. By adopting the higher order aspherical shape, the beam shape can be further refined.
In addition to making the end surface shape of the light exit side of the microlens 55a a toric surface, it is also possible to form a microlens array from microlenses having one of two light passing end surfaces as a spherical surface and the other as a cylindrical surface. It is.

19A, 19B, 19C, and 19D are diagrams showing the results of simulating the beam diameter in the vicinity of the condensing position (focal position) of the microlens 55a by a computer.
For comparison, FIGS. 20a, 20b, 20c, and 20d show the results of a similar simulation performed when the microlens has a spherical shape with a radius of curvature Rx = Ry = −0.1 mm. In addition, the value of z in each figure has shown the evaluation position of the focus direction of the micro lens 55a with the distance from the beam emission surface of the micro lens 55a.
The surface shape of the microlens 55a used for the simulation is calculated by the following calculation formula.

In the above formula, Cx is the curvature in the x direction (= 1 / Rx), Cy is the curvature in the y direction (= 1 / Ry), X is the distance from the lens optical axis O in the x direction, Y Indicates the distance from the lens optical axis O in the y direction, respectively.

  19A to 19D and FIGS. 20A to 20D, in the pattern forming method of the present invention, the microlens 55a has a focal length in the cross section parallel to the y direction that is greater than the focal distance in the cross section parallel to the x direction. Since the toric lens is also small, distortion of the beam shape in the vicinity of the condensing position is suppressed. Therefore, it is possible to expose the pattern forming material 150 with a higher definition image without distortion.

  In addition, when the magnitude relation of the distortion of the center part in the x direction and the y direction of the micromirror 62 is opposite to the above, the focal length in the parallel section in the x direction is the focal length in the parallel section in the y direction. If the microlens is formed of a smaller toric lens, the pattern forming material 150 can be similarly exposed to a higher-definition image without distortion.

The aperture array 59 is disposed in the vicinity of the light collection position of the microlens array 55. Only the light that has passed through the corresponding microlens 55 a is incident on each aperture 59 a provided in the aperture array 59. Therefore, it is possible to prevent light from the adjacent micro lens 55a not corresponding to one aperture 59a corresponding to the one micro lens 55a from entering, and to increase the extinction ratio.
If the diameter of the aperture 59a is reduced to some extent, an effect of suppressing distortion of the beam shape at the condensing position of the microlens 55a can be obtained, but the amount of light blocked by the aperture array 59 is increased, and the light utilization efficiency is reduced. . In this case, the microlens 55a having the aspherical shape prevents light from being blocked and keeps light use efficiency high.

  The micro lens array 55 and the aperture array 59 correct the aberration caused by the distortion of the reflection surface of the micro mirror 62 constituting the DMD 50. In the pattern forming method of the present invention using a spatial light modulation element other than the DMD. However, if there is distortion on the surface of the picture element portion of the spatial light modulator, the present invention can be applied to correct the aberration due to the distortion and prevent the beam shape from being distorted.

  As shown in FIG. 13A, the imaging optical system includes lenses 480 and 482, and the light passing through the aperture array 59 is imaged on the exposed surface 56 by the imaging optical system.

As described above, in the pattern forming apparatus, the laser light reflected by the DMD 50 is magnified several times by the magnifying lenses 454 and 458 of the lens system and projected onto the exposed surface 56, so that the entire image area is Become wider. At this time, if the microlens array 472 and the aperture array 476 are not arranged, as shown in FIG. 13B, one pixel size (spot size) of each beam spot BS projected onto the exposed surface 56 is set. MTF (Modulation Transfer Function) characteristics representing the sharpness of the exposure area 468 are reduced depending on the size of the exposure area 468.
On the other hand, since the pattern forming apparatus includes the micro lens array 472 and the aperture array 476, the laser light reflected by the DMD 50 corresponds to each pixel part of the DMD 50 by each micro lens of the micro lens array 472. Focused. As a result, as shown in FIG. 13C, even when the exposure area is enlarged, the spot size of each beam spot BS can be reduced to a desired size (for example, 10 μm × 10 μm). It is possible to perform high-definition exposure while preventing deterioration of characteristics.
Note that the exposure area 468 is inclined because the DMD 50 is inclined and disposed in order to eliminate the gap between the pixels.
In addition, the aperture array can shape the beam so that the spot size on the surface to be exposed 56 is constant even if the beam is thick due to the aberration of the micro lens. Thus, crosstalk between adjacent picture elements can be prevented by passing through the aperture array.
Further, by using a high-intensity light source for the light irradiating means 144, the angle of the light beam incident from the lens 458 to each microlens of the microlens array 472 is reduced, so that a part of the light flux of the adjacent pixel enters. Can be prevented. That is, a high extinction ratio can be realized.

FIGS. 22A and 22B are views showing the front shape and side shape of another microlens array.
As shown in FIG. 22, as another microlens array, each microlens has a refractive index distribution for correcting aberration due to distortion of the reflection surface of the micromirror 62.
As illustrated, the external shape of the other microlens 155a is a parallel plate. The x and y directions in the figure are as described above.
FIG. 23 is a schematic view showing a condensing state of the laser beam B in the cross section parallel to the x direction and the y direction by the micro lens 155a of FIG.
As shown in FIG. 23, the micro lens 155a has a refractive index distribution that gradually increases outward from the optical axis O. In FIG. 23, the broken line shown in the micro lens 155a indicates that the refractive index is light. A position changed from the axis O at a predetermined equal pitch is shown. As shown in the drawing, when the parallel cross section in the x direction is compared with the parallel cross section in the y direction, the ratio of the refractive index change of the microlens 155a is larger in the latter cross section, and the focal length is shorter. It has become. Even when a microlens array composed of such a gradient index lens is used, it is possible to obtain the same effect as when the microlens array 55 is used.
In addition, in the microlens 55a shown in FIGS. 17 and 18, the refractive index distribution is given together, and the aberration due to the distortion of the reflecting surface of the micromirror 62 can be corrected by both the surface shape and the refractive index distribution. Is possible.

In the pattern forming method of the present invention, it may be used in combination with other optical systems appropriately selected from known optical systems, for example, a light amount distribution correcting optical system composed of a pair of combination lenses.
The light amount distribution correcting optical system changes the light flux width at each exit position so that the ratio of the light flux width at the peripheral portion to the light flux width at the central portion close to the optical axis is smaller on the exit side than on the incident side. When the DMD is irradiated with the parallel light flux from the light irradiation means, the light amount distribution on the irradiated surface is corrected so as to be substantially uniform. Hereinafter, the light quantity distribution correcting optical system will be described with reference to the drawings.

FIG. 24 is an explanatory diagram showing the concept of correction by the light quantity distribution correction optical system.
As shown in FIG. 24A, the case where the entire luminous flux width (total luminous flux width) H0 and H1 is the same for the incident luminous flux and the outgoing luminous flux will be described. In FIG. 24A, the portions denoted by reference numerals 51 and 52 virtually indicate the entrance surface and the exit surface in the light amount distribution correcting optical system.
In the light quantity distribution correcting optical system, it is assumed that the light flux widths h0 and h1 of the light beam incident on the central portion near the optical axis Z1 and the light beam incident on the peripheral portion are the same (h0 = hl). The light quantity distribution correcting optical system expands the light flux width h0 of the incident light beam in the central portion with respect to the light having the same light flux widths h0 and h1 on the incident side, and conversely changes the incident light flux in the peripheral portion. On the other hand, the light beam width h1 is reduced. That is, the width h10 of the outgoing light beam at the center and the width h11 of the outgoing light beam at the periphery are set to satisfy h11 <h10. In terms of the ratio of the luminous flux width, the ratio “h11 / h10” of the luminous flux width in the peripheral portion to the luminous flux width in the central portion on the emission side is smaller than the ratio on the incident side (h1 / h0 = 1) ( (H11 / h10) <1).

  By changing the light flux width in this way, the light flux in the central part, which normally has a large light quantity distribution, can be utilized in the peripheral part where the light quantity is insufficient, and the overall light utilization efficiency is not reduced. In addition, the light quantity distribution on the irradiated surface is made substantially uniform. The degree of uniformity is, for example, such that the unevenness in the amount of light in the effective area is within 30%, preferably within 20%.

  The operations and effects of the light quantity distribution correcting optical system are the same when the entire luminous flux width is changed between the incident side and the exit side (FIGS. 24B and 24C).

  FIG. 24B shows a case where the entire light flux width H0 on the incident side is “reduced” to the width H2 and emitted (H0> H2). Even in such a case, the light quantity distribution correcting optical system has the same light beam width h0, h1 on the incident side, and the light beam width h10 in the central part is larger than that in the peripheral part on the emission side. Conversely, the luminous flux width h11 at the peripheral part is made smaller than that at the central part. Considering the reduction rate of the light beam, the reduction rate with respect to the incident light beam in the central part is made smaller than that in the peripheral part, and the reduction rate with respect to the incident light beam in the peripheral part is made larger than that in the central part. Also in this case, the ratio “H11 / H10” of the light flux width in the peripheral portion to the light flux width in the central portion is smaller than the ratio (h1 / h0 = 1) on the incident side ((h11 / h10) <1). .

  FIG. 24C shows a case where the entire light flux width H0 on the incident side is “enlarged” by the width Η3 and emitted (H0 <H3). Even in such a case, the light quantity distribution correcting optical system has the same light beam width h0, h1 on the incident side, and the light beam width h10 in the central part is larger than that in the peripheral part on the emission side. Conversely, the luminous flux width h11 at the peripheral part is made smaller than that at the central part. Considering the expansion rate of the light beam, the expansion rate for the incident light beam in the central portion is made larger than that in the peripheral portion, and the expansion rate for the incident light beam in the peripheral portion is made smaller than that in the central portion. Also in this case, the ratio “h11 / h10” of the light flux width in the peripheral portion to the light flux width in the central portion is smaller than the ratio (h1 / h0 = 1) on the incident side ((h11 / h10) <1). .

  As described above, the light quantity distribution correcting optical system changes the light flux width at each emission position, and the ratio of the light flux width in the peripheral portion to the light flux width in the central portion close to the optical axis Z1 is larger on the outgoing side than on the incident side. Since the light having the same luminous flux width on the incident side is larger on the outgoing side, the luminous flux width in the central portion is larger than that in the peripheral portion, and the luminous flux width in the peripheral portion is smaller than that in the central portion. Become smaller. As a result, it is possible to make use of the light beam at the center part to the peripheral part, and it is possible to form a light beam cross-section with a substantially uniform light amount distribution without reducing the light use efficiency of the entire optical system.

Next, an example of specific lens data of a pair of combination lenses used as the light quantity distribution correcting optical system will be shown. In this example, lens data is shown in the case where the light amount distribution in the cross section of the emitted light beam is a Gaussian distribution, as in the case where the light irradiation means is a laser array light source. When one semiconductor laser is connected to the incident end of the single mode optical fiber, the light quantity distribution of the emitted light beam from the optical fiber becomes a Gaussian distribution. The pattern forming method of the present invention can be applied to such a case. Further, the present invention can be applied to a case where the light amount in the central portion near the optical axis is larger than the light amount in the peripheral portion, for example, by reducing the core diameter of the multi-mode optical fiber and approaching the configuration of the single mode optical fiber.
Table 1 below shows basic lens data.

  As can be seen from Table 1, the pair of combination lenses is composed of two rotationally symmetric aspherical lenses. If the light incident side surface of the first lens disposed on the light incident side is the first surface and the light exit side surface is the second surface, the first surface is aspherical. In addition, when the surface on the light incident side of the second lens disposed on the light emitting side is the third surface and the surface on the light emitting side is the fourth surface, the fourth surface is aspherical.

In Table 1, the surface number Si indicates the number of the i-th surface (i = 1 to 4), the curvature radius ri indicates the curvature radius of the i-th surface, and the surface interval di indicates the i-th surface and the i + 1-th surface. The distance between surfaces on the optical axis is shown. The unit of the surface interval di value is millimeter (mm). The refractive index Ni indicates the value of the refractive index with respect to the wavelength of 405 nm of the optical element having the i-th surface.
Table 2 below shows the aspheric data of the first surface and the fourth surface.

  The aspheric data is expressed by a coefficient in the following formula (A) that represents the aspheric shape.

In the above formula (A), each coefficient is defined as follows.
Z: Length of a perpendicular line (mm) drawn from a point on the aspheric surface at a height ρ from the optical axis to the tangent plane (plane perpendicular to the optical axis) of the apex of the aspheric surface
ρ: Distance from optical axis (mm)
K: conic coefficient C: paraxial curvature (1 / r, r: paraxial radius of curvature)
ai: i-th order (i = 3 to 10) aspheric coefficient In the numerical values shown in Table 2, the symbol “E” indicates that the subsequent numerical value is a “power index” with 10 as the base. The numerical value represented by the exponential function with the base of 10 is multiplied by the numerical value before “E”. For example, “1.0E-02” indicates “1.0 × 10 ⁻² ”.

FIG. 26 shows a light amount distribution of illumination light obtained by the pair of combination lenses shown in Tables 1 and 2. Here, the horizontal axis represents coordinates from the optical axis, and the vertical axis represents the light amount ratio (%). For comparison, FIG. 25 shows a light amount distribution (Gaussian distribution) of illumination light when correction is not performed.
As shown in FIGS. 25 and 26, the light amount distribution correction optical system performs a correction to obtain a substantially uniform light amount distribution as compared with the case where the correction is not performed. Thereby, it is possible to perform exposure with uniform laser light without reducing the use efficiency of light, without causing any unevenness.

Next, the fiber array light source 66 as a light irradiation means will be described.
27A (A) is a perspective view showing a configuration of a fiber array light source, FIG. 27A (B) is a partially enlarged view of (A), and FIGS. 27A (C) and (D) are laser emitting portions. It is a top view which shows the arrangement | sequence of the light emission point in. FIG. 27 b is a front view showing the arrangement of the light emitting points in the laser emission part of the fiber array light source.

  As shown in FIG. 27 a, the fiber array light source 66 includes a plurality of (for example, 14) laser modules 64, and one end of the multimode optical fiber 30 is coupled to each laser module 64. An optical fiber 31 having the same core diameter as that of the multimode optical fiber 30 and a smaller cladding diameter than the multimode optical fiber 30 is coupled to the other end of the multimode optical fiber 30. As shown in detail in FIG. 27b, seven end portions of the multimode optical fiber 31 opposite to the optical fiber 30 are arranged along the main scanning direction orthogonal to the sub-scanning direction, and they are arranged in two rows to form a laser. An emission unit 68 is configured.

  As shown in FIG. 27b, the laser emitting portion 68 is sandwiched and fixed between two support plates 65 having a flat surface. In addition, a transparent protective plate such as glass is preferably disposed on the light emitting end face of the multimode optical fiber 31 for protection. The light exit end face of the multimode optical fiber 31 has high light density and is likely to collect dust and easily deteriorate. However, the protective plate as described above prevents the dust from adhering to the end face and deteriorates. Can be delayed.

  Further, in order to arrange the emission ends of the optical fibers 31 having a small cladding diameter in a row without any gaps, the multi-mode optical fibers 30 are stacked between two adjacent multi-mode optical fibers 30 in a portion having a large cladding diameter, The exit end of the optical fiber 31 coupled to the stacked multi-mode optical fiber 30 is between the two exit ends of the optical fiber 31 coupled to the two adjacent multi-mode optical fibers 30 at a portion where the cladding diameter is large. It is arranged to be sandwiched between.

  In such an optical fiber, as shown in FIG. 28, an optical fiber 31 having a length of 1 to 30 cm and having a small cladding diameter is coaxially provided at the tip of the multimode optical fiber 30 having a large cladding diameter on the laser light emission side. It can be obtained by bonding. In the two optical fibers, the incident end face of the optical fiber 31 is fused and joined to the outgoing end face of the multimode optical fiber 30 so that the central axes of both optical fibers coincide. As described above, the diameter of the core 31 a of the optical fiber 31 is the same as the diameter of the core 30 a of the multimode optical fiber 30.

  In addition, a short optical fiber in which an optical fiber having a short cladding diameter and a large cladding diameter is fused to an optical fiber having a short cladding diameter and a large cladding diameter may be coupled to the output end of the multimode optical fiber 30 via a ferrule or an optical connector. Good. By detachably coupling using a connector or the like, the tip portion can be easily replaced when an optical fiber having a small cladding diameter is broken, and the cost required for exposure head maintenance can be reduced. Hereinafter, the optical fiber 31 may be referred to as an emission end portion of the multimode optical fiber 30.

  The multimode optical fiber 30 and the optical fiber 31 may be any of a step index type optical fiber, a graded index type optical fiber, and a composite type optical fiber. For example, a step index type optical fiber manufactured by Mitsubishi Cable Industries, Ltd. can be used. In the present embodiment, the multimode optical fiber 30 and the optical fiber 31 are step index type optical fibers, and the multimode optical fiber 30 has a cladding diameter = 125 μm, a core diameter = 50 μm, NA = 0.2, an incident end face. The transmittance of the coat is 99.5% or more, and the optical fiber 31 has a cladding diameter = 60 μm, a core diameter = 50 μm, and NA = 0.2.

  In general, in laser light in the infrared region, propagation loss increases as the cladding diameter of the optical fiber is reduced. For this reason, a suitable cladding diameter is determined according to the wavelength band of the laser beam. However, the shorter the wavelength, the smaller the propagation loss. In the case of laser light having a wavelength of 405 nm emitted from a GaN-based semiconductor laser, the cladding thickness {(cladding diameter−core diameter) / 2} is set to an infrared light having a wavelength band of 800 nm. The propagation loss hardly increases even if it is about ½ of the case of propagating infrared light and about ¼ of the case of propagating infrared light in the 1.5 μm wavelength band for communication. Therefore, the cladding diameter can be reduced to 60 μm.

  However, the clad diameter of the optical fiber 31 is not limited to 60 μm. The clad diameter of the optical fiber used in the conventional fiber array light source is 125 μm, but the depth of focus becomes deeper as the clad diameter becomes smaller. More preferably, it is 40 μm or less. On the other hand, since the core diameter needs to be at least 3 to 4 μm, the cladding diameter of the optical fiber 31 is preferably 10 μm or more.

  The laser module 64 includes a combined laser light source (fiber array light source) shown in FIG. This combined laser light source includes a plurality of (for example, seven) chip-like lateral multimode or single mode GaN-based semiconductor lasers LD1, LD2, LD3, LD4, LD5, LD6, arrayed and fixed on the heat block 10. And LD7, collimator lenses 11, 12, 13, 14, 15, 16, and 17 provided corresponding to each of the GaN-based semiconductor lasers LD1 to LD7, one condenser lens 20, and one multi-lens. Mode optical fiber 30. The number of semiconductor lasers is not limited to seven. For example, as many as 20 semiconductor laser beams can be incident on a multimode optical fiber having a cladding diameter = 60 μm, a core diameter = 50 μm, and NA = 0.2. In addition, the number of optical fibers can be further reduced.

  The GaN-based semiconductor lasers LD1 to LD7 all have the same oscillation wavelength (for example, 405 nm), and the maximum output is also all the same (for example, 100 mW for the multimode laser and 30 mW for the single mode laser). As the GaN-based semiconductor lasers LD1 to LD7, lasers having an oscillation wavelength other than the above 405 nm in a wavelength range of 350 nm to 450 nm may be used.

  As shown in FIGS. 30 and 31, the combined laser light source is housed in a box-shaped package 40 having an upper opening together with other optical elements. The package 40 includes a package lid 41 created so as to close the opening thereof. After the deaeration process, a sealing gas is introduced, and the package 40 and the package lid 41 are closed by closing the opening of the package 40 with the package lid 41. 41. The combined laser light source is hermetically sealed in a closed space (sealed space) formed by 41.

  A base plate 42 is fixed to the bottom surface of the package 40, and the heat block 10, a condensing lens holder 45 that holds the condensing lens 20, and the multimode optical fiber 30 are disposed on the top surface of the base plate 42. A fiber holder 46 that holds the incident end is attached. The exit end of the multimode optical fiber 30 is drawn out of the package from an opening formed in the wall surface of the package 40.

  Further, a collimator lens holder 44 is attached to the side surface of the heat block 10, and the collimator lenses 11 to 17 are held. An opening is formed in the lateral wall surface of the package 40, and wiring 47 for supplying a driving current to the GaN-based semiconductor lasers LD1 to LD7 is drawn out of the package through the opening.

  In FIG. 31, in order to avoid complication of the figure, only the GaN-based semiconductor laser LD7 among the plurality of GaN-based semiconductor lasers is numbered, and only the collimator lens 17 among the plurality of collimator lenses is numbered. is doing.

  FIG. 32 shows the front shape of the attachment part of the collimator lenses 11-17. Each of the collimator lenses 11 to 17 is formed in a shape obtained by cutting a region including the optical axis of a circular lens having an aspherical surface into an elongated shape on a parallel plane. This elongated collimator lens can be formed, for example, by molding resin or optical glass. The collimator lenses 11 to 17 are closely arranged in the arrangement direction of the light emitting points so that the length direction is orthogonal to the arrangement direction of the light emitting points of the GaN-based semiconductor lasers LD1 to LD7 (left and right direction in FIG. 32).

  On the other hand, each of the GaN-based semiconductor lasers LD1 to LD7 includes an active layer having a light emission width of 2 μm, and each of the laser beams B1 to B1 has a divergence angle of, for example, 10 ° and 30 ° in a direction parallel to and perpendicular to the active layer. A laser emitting B7 is used. These GaN-based semiconductor lasers LD1 to LD7 are arranged so that the light emitting points are arranged in a line in a direction parallel to the active layer.

In the laser beams B1 to B7 emitted from the respective light emitting points, the direction in which the divergence angle is large coincides with the length direction and the direction in which the divergence angle is small with respect to the elongated collimator lenses 11 to 17 as described above. Incident light is incident in a state that coincides with the width direction (direction orthogonal to the length direction). That is, the collimator lenses 11 to 17 have a width of 1.1 mm and a length of 4.6 mm, and the horizontal and vertical beam diameters of the laser beams B1 to B7 incident thereon are 0.9 mm and 6 mm. Each of the collimator lenses 11 to 17 has a focal length f ₁ = 3 mm, NA = 0.6, and a lens arrangement pitch = 1.25 mm.

The condensing lens 20 is obtained by cutting a region including the optical axis of a circular lens having an aspherical surface into an elongated shape in a parallel plane so as to be long in the arrangement direction of the collimator lenses 11 to 17, that is, in a horizontal direction and short in a direction perpendicular thereto. Is formed. This condenser lens 20 has a focal length f ₂ = 23 mm and NA = 0.2. This condensing lens 20 is also formed by molding resin or optical glass, for example.

Since the fiber array light source uses a high-intensity fiber array light source in which the output ends of the optical fibers of the combined laser light source are arranged in an array as the light irradiating means for illuminating the DMD, it has a high output and a deep focus. A pattern forming apparatus having a depth can be realized. Furthermore, since the output of each fiber array light source is increased, the number of fiber array light sources required to obtain a desired output is reduced, and the cost of the pattern forming apparatus can be reduced.
Further, since the cladding diameter of the output end of the optical fiber is smaller than the cladding diameter of the incident end, the diameter of the light emitting portion is further reduced, and the brightness of the fiber array light source can be increased. Thereby, a pattern forming apparatus having a deeper depth of focus can be realized. For example, even in the case of ultra-high resolution exposure with a beam diameter of 1 μm or less and a resolution of 0.1 μm or less, a deep depth of focus can be obtained, and high-speed and high-definition exposure is possible. Therefore, it is suitable for a thin film transistor (TFT) exposure process that requires high resolution.

  The light irradiating means is not limited to a fiber array light source including a plurality of the combined laser light sources. For example, a single laser beam that emits laser light incident from a single semiconductor laser having one light emitting point is emitted. A fiber array light source obtained by arraying fiber light sources including optical fibers can be used.

  As the light irradiation means having a plurality of light emitting points, for example, as shown in FIG. 33, a laser array in which a plurality of (for example, seven) chip-shaped semiconductor lasers LD1 to LD7 are arranged on the heat block 100 is used. Can be used. A chip-shaped multicavity laser 110 in which a plurality of (for example, five) light emitting points 110a shown in FIG. 34A are arranged in a predetermined direction can also be used. Since the multicavity laser 110 can arrange the light emitting points with higher positional accuracy than the case where the chip-shaped semiconductor lasers are arranged, it is easy to multiplex laser beams emitted from the respective light emitting points. However, as the number of light emitting points increases, the multicavity laser 110 is likely to be bent at the time of laser manufacturing. Therefore, the number of light emitting points 110a is preferably 5 or less.

  As the light irradiation means, the multi-cavity laser 110 or a plurality of multi-cavity lasers 110 on the heat block 100 in the same direction as the arrangement direction of the light emitting points 110a of each chip as shown in FIG. An arrayed multi-cavity laser array can be used as a laser light source.

The combined laser light source is not limited to one that combines laser beams emitted from a plurality of chip-shaped semiconductor lasers.
For example, as shown in FIG. 21, a combined laser light source including a chip-shaped multicavity laser 110 having a plurality of (for example, three) light emitting points 110a can be used. This combined laser light source is configured to include a multi-cavity laser 110, one multi-mode optical fiber 130, and a condensing lens 120. The multi-cavity laser 110 can be composed of, for example, a GaN-based laser diode having an oscillation wavelength of 405 nm.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 110 a of the multicavity laser 110 is collected by the condenser lens 120 and enters the core 130 a of the multimode optical fiber 130. The laser light incident on the core 130a propagates in the optical fiber, is combined into one, and is emitted.

  A plurality of light emitting points 110 a of the multicavity laser 110 are arranged in parallel within a width substantially equal to the core diameter of the multimode optical fiber 130, and a focal point substantially equal to the core diameter of the multimode optical fiber 130 is formed as the condenser lens 120. By using a convex lens of a distance or a rod lens that collimates the outgoing beam from the multicavity laser 110 only in a plane perpendicular to the active layer, the coupling efficiency of the laser beam B to the multimode optical fiber 130 can be increased. it can.

  As shown in FIG. 35, a multi-cavity laser 110 having a plurality of (for example, three) emission points is used, and a plurality of (for example, nine) multi-cavity lasers 110 are equidistant from each other on the heat block 111. A combined laser light source including the laser array 140 arranged in (1) can be used. The plurality of multi-cavity lasers 110 are arranged and fixed in the same direction as the arrangement direction of the light emitting points 110a of each chip.

  This combined laser light source includes a laser array 140, a plurality of lens arrays 114 arranged corresponding to each multi-cavity laser 110, and a single rod arranged between the laser array 140 and the plurality of lens arrays 114. The lens 113, one multimode optical fiber 130, and a condenser lens 120 are provided. The lens array 114 includes a plurality of microlenses corresponding to the emission points of the multi-capability laser 110.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 110a of the plurality of multi-cavity lasers 110 is condensed in a predetermined direction by the rod lens 113, and then each microlens of the lens array 114. It becomes parallel light. The collimated laser beam L is condensed by the condenser lens 120 and enters the core 130a of the multimode optical fiber 130. The laser light incident on the core 130a propagates in the optical fiber, is combined into one, and is emitted.

  Furthermore, as another combined laser light source, as shown in FIGS. 36A and 36B, a heat block 182 having an L-shaped cross section in the optical axis direction is mounted on a heat block 180 having a substantially rectangular shape. A storage space is formed between the two heat blocks. On the upper surface of the L-shaped heat block 182, a plurality of (for example, two) multi-cavity lasers 110 in which a plurality of light emitting points (for example, five) are arranged in an array form the light emitting points 110a of each chip. It is arranged and fixed at equal intervals in the same direction as the arrangement direction.

  A concave portion is formed in the substantially rectangular heat block 180, and a plurality of (for example, two) light emitting points (for example, five) are arranged in an array on the upper surface of the space side of the heat block 180. The multi-cavity laser 110 is arranged such that its emission point is located on the same vertical plane as the emission point of the laser chip arranged on the upper surface of the heat block 182.

  On the laser beam emission side of the multi-cavity laser 110, a collimator lens array 184 in which collimator lenses are arranged corresponding to the light emission points 110a of the respective chips is arranged. In the collimating lens array 184, the length direction of each collimating lens coincides with the direction in which the divergence angle of the laser beam is large (fast axis direction), and the width direction of each collimating lens is in the direction in which the divergence angle is small (slow axis direction). They are arranged to match. Thus, by collimating and integrating the collimating lenses, the space utilization efficiency of the laser light can be improved, the output of the combined laser light source can be increased, and the number of parts can be reduced and the cost can be reduced. .

  Further, on the laser beam emitting side of the collimating lens array 184, there is one multimode optical fiber 130, and a condensing lens 120 that condenses and combines the laser beam at the incident end of the multimode optical fiber 130. Is arranged.

  In the above configuration, each of the laser beams B emitted from each of the plurality of emission points 110a of the plurality of multi-cavity lasers 110 arranged on the laser blocks 180 and 182 is collimated by the collimating lens array 184 and collected. The light is condensed by the optical lens 120 and enters the core 130 a of the multimode optical fiber 130. The laser light incident on the core 130a propagates in the optical fiber, is combined into one, and is emitted.

  As described above, the combined laser light source can achieve particularly high output by the multistage arrangement of multicavity lasers and the array of collimating lenses. By using this combined laser light source, a higher-intensity fiber array light source or bundle fiber light source can be configured, so that it is particularly suitable as a fiber light source constituting the laser light source of the pattern forming apparatus of the present invention.

  It should be noted that a laser module in which each of the combined laser light sources is housed in a casing and the emission end of the multimode optical fiber 130 is pulled out from the casing can be configured.

  In addition, the other end of the multimode optical fiber of the combined laser light source is coupled with another optical fiber having the same core diameter as the multimode optical fiber and a cladding diameter smaller than the multimode optical fiber. However, for example, a multimode optical fiber having a cladding diameter of 125 μm, 80 μm, 60 μm or the like may be used without coupling another optical fiber to the emission end.

  In each exposure head 166 of the scanner 162, laser beams B1, B2, B3, B4, B5, and B6 emitted in a divergent light state from each of the GaN-based semiconductor lasers LD1 to LD7 constituting the combined laser light source of the fiber array light source 66. , And B7 are collimated by corresponding collimator lenses 11-17. The collimated laser beams B <b> 1 to B <b> 7 are collected by the condenser lens 20 and converge on the incident end face of the core 30 a of the multimode optical fiber 30.

The condensing optical system includes collimator lenses 11 to 17 and a condensing lens 20. Also, the converging optical system and the multimode optical fiber 30 constitute a multiplexing optical system.
The laser beams B1 to B7 condensed as described above by the condenser lens 20 are incident on the core 30a of the multimode optical fiber 30, propagate through the optical fiber, and are combined into one laser beam B. The light exits from the optical fiber 31 coupled to the exit end of the multimode optical fiber 30.

  In each laser module, when the coupling efficiency of the laser beams B1 to B7 to the multimode optical fiber 30 is 0.85 and each output of the GaN-based semiconductor lasers LD1 to LD7 is 30 mW, the light arranged in an array For each of the fibers 31, a combined laser beam B with an output of 180 mW (= 30 mW × 0.85 × 7) can be obtained. Therefore, the output from the laser emitting unit 68 in which the six optical fibers 31 are arranged in an array is about 1 W (= 180 mW × 6).

  In the laser emitting section 68 of the fiber array light source 66, high-luminance light emitting points are arranged in a line along the main scanning direction. A conventional fiber light source that couples laser light from a single semiconductor laser to a single optical fiber has a low output, so that a desired output cannot be obtained unless multiple rows are arranged. Since the laser light source has a high output, a desired output can be obtained even with a small number of columns, for example, one column.

For example, in a conventional fiber light source in which a semiconductor laser and an optical fiber are coupled on a one-to-one basis, a laser having an output of about 30 mW (milliwatt) is usually used as the semiconductor laser, and the core diameter is 50 μm and the cladding diameter is 125 μm. Since a multimode optical fiber having a numerical aperture (NA) of 0.2 is used, if an output of about 1 W (watt) is to be obtained, 48 multimode optical fibers (8 × 6) must be bundled. Since the area of the light emitting region is 0.62 mm ² (0.675 mm × 0.925 mm), the luminance at the laser emitting portion 68 is 1.6 × 10 ⁶ (W / m ² ) and one optical fiber is used. The luminance per hit is 3.2 × 10 ⁶ (W / m ² ).

On the other hand, when the light irradiating means is a means capable of irradiating a combined laser, an output of about 1 W can be obtained with six multimode optical fibers, and the area of the light emitting region at the laser emitting portion 68 can be obtained. Is 0.0081 mm ² (0.325 mm × 0.025 mm), the luminance at the laser emitting portion 68 is 123 × 10 ⁶ (W / m ² ), which is about 80 times higher than the conventional luminance. be able to. Further, the luminance per optical fiber is 90 × 10 ⁶ (W / m ² ), and the luminance can be increased by about 28 times compared with the conventional one.

  Here, with reference to FIGS. 37A and 37B, the difference in depth of focus between the conventional exposure head and the exposure head of the present embodiment will be described. The diameter of the light emission region of the bundled fiber light source of the conventional exposure head in the sub-scanning direction is 0.675 mm, and the diameter of the light emission region of the fiber array light source of the exposure head in the sub-scanning direction is 0.025 mm. As shown in FIG. 37A, in the conventional exposure head, since the light emitting area of the light irradiating means (bundle-shaped fiber light source) 1 is large, the angle of the light beam incident on the DMD 3 is increased, and as a result, the scanning surface 5 is moved. The angle of the incident light beam increases. For this reason, the beam diameter tends to increase with respect to the light condensing direction (shift in the focus direction).

  On the other hand, as shown in FIG. 37B, in the exposure head in the pattern forming apparatus of the present invention, the diameter of the light emitting region of the fiber array light source 66 in the sub-scanning direction is small, so that it passes through the lens system 67 and enters the DMD 50. As a result, the angle of the light beam incident on the scanning surface 56 is reduced. That is, the depth of focus becomes deep. In this example, the diameter of the light emitting region in the sub-scanning direction is about 30 times that of the conventional one, and a depth of focus substantially corresponding to the diffraction limit can be obtained. Therefore, it is suitable for exposure of a minute spot. This effect on the depth of focus is more prominent and effective as the required light quantity of the exposure head is larger. In this example, the size of one pixel projected on the exposure surface is 10 μm × 10 μm. The DMD is a reflective spatial light modulator, but FIGS. 37A and 37B are developed views for explaining the optical relationship.

Next, the pattern forming method of the present invention using the pattern forming apparatus will be described.
First, pattern information corresponding to the exposure pattern is input to a controller (not shown) connected to the DMD 50 and temporarily stored in a frame memory in the controller. This pattern information is data representing the density of each pixel constituting the image as binary values (whether or not dots are recorded).
Next, the stage 152 having the pattern forming material 150 adsorbed on the surface thereof is moved at a constant speed from the upstream side to the downstream side of the gate 160 along the guide 158 by a driving device (not shown). When the leading edge of the pattern forming material 150 is detected by the detection sensor 164 attached to the gate 160 when the stage 152 passes under the gate 160, the pattern information stored in the frame memory is sequentially read out for a plurality of lines. Then, a control signal is generated for each exposure head 166 based on the pattern information read by the data processing unit. Then, each of the micromirrors of the DMD 50 is on / off controlled for each exposure head 166 based on the generated control signal by the mirror drive control unit.
Next, when the DMD 50 is irradiated with laser light from the fiber array light source 66, the laser light reflected when the micromirrors of the DMD 50 are turned on is exposed to the exposed surface 56 of the pattern forming material 150 by the lens systems 54 and 58. Imaged on top.
In this way, the laser light emitted from the fiber array light source 66 is turned on / off for each pixel, and the pattern forming material 150 is exposed in approximately the same number of pixel units (exposure area 168) as the number of used pixel elements of the DMD 50. The
Further, when the pattern forming material 150 is moved at a constant speed together with the stage 152, the pattern forming material 150 is sub-scanned in the direction opposite to the stage moving direction by the scanner 162, and a strip-shaped exposed region 170 is provided for each exposure head 166. Is formed.

[Development process]
Examples of the development step include a step of developing by removing an uncured region of the photosensitive layer exposed in the exposure step.
There is no restriction | limiting in particular as the removal method of the said unhardened area | region, According to the objective, it can select suitably, For example, the method etc. which remove using a developing solution are mentioned.

  There is no restriction | limiting in particular as said developing solution, Although it can select suitably according to the objective, For example, alkaline aqueous solution, an aqueous developing solution, an organic solvent etc. are mentioned, Among these, weakly alkaline aqueous solution is preferable. Examples of the basic component of the weak alkaline aqueous solution include lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium phosphate, phosphorus Examples include potassium acid, sodium pyrophosphate, potassium pyrophosphate, and borax.

The pH of the weak alkaline aqueous solution is, for example, preferably about 8 to 12, and more preferably about 9 to 11. Examples of the weak alkaline aqueous solution include a 0.1 to 5% by mass aqueous sodium carbonate solution or an aqueous potassium carbonate solution.
The temperature of the developer can be appropriately selected according to the developability of the photosensitive layer, and is preferably about 25 ° C. to 40 ° C., for example.

  The developer includes a surfactant, an antifoaming agent, an organic base (for example, ethylenediamine, ethanolamine, tetramethylammonium hydroxide, diethylenetriamine, triethylenepentamine, morpholine, triethanolamine, etc.) and accelerates development. Therefore, it may be used in combination with an organic solvent (for example, alcohols, ketones, esters, ethers, amides, lactones, etc.). The developer may be an aqueous developer obtained by mixing water or an aqueous alkali solution and an organic solvent, or may be an organic solvent alone.

[Other processes]
There is no restriction | limiting in particular as said other process, Although selecting suitably from the process in well-known pattern formation is mentioned, For example, a hardening process process, an etching process, a plating process, etc. are mentioned. These may be used alone or in combination of two or more.

-Curing process-
When the pattern forming method of the present invention is a pattern forming method for forming a pattern such as a protective film or an interlayer insulating film, the pattern forming method includes a curing process step for performing a curing process on the photosensitive layer after the development step. It is preferable.
There is no restriction | limiting in particular as said hardening process, Although it can select suitably according to the objective, For example, a whole surface exposure process, a whole surface heat processing, etc. are mentioned suitably.

Examples of the entire surface exposure processing method include a method of exposing the entire surface of the laminate on which the pattern is formed after the developing step. The entire surface exposure accelerates the curing of the resin in the pattern forming composition for forming the photosensitive layer, and the surface of the pattern is cured.
There is no restriction | limiting in particular as an apparatus which performs the said whole surface exposure, Although it can select suitably according to the objective, For example, UV exposure machines, such as an ultrahigh pressure mercury lamp, are mentioned suitably.

Examples of the entire surface heat treatment method include a method of heating the entire surface of the laminate on which the pattern is formed after the developing step. The whole surface heating increases the film strength of the surface of the pattern.
As heating temperature in the said whole surface heating, 120-250 degreeC is preferable and 120-200 degreeC is more preferable. When the heating temperature is less than 120 ° C., the film strength may not be improved by the heat treatment. When the heating temperature exceeds 250 ° C., the resin in the pattern forming composition is decomposed, and the film quality is weak and brittle. May be.
The heating time in the entire surface heating is preferably 10 to 120 minutes, and more preferably 15 to 60 minutes.
There is no restriction | limiting in particular as an apparatus which performs the said whole surface heating, According to the objective, it can select suitably from well-known apparatuses, For example, a dry oven, a hot plate, IR heater etc. are mentioned.

-Etching process-
The etching step can be performed by a method appropriately selected from known etching methods.
There is no restriction | limiting in particular as an etching liquid used for the said etching process, Although it can select suitably according to the objective, For example, when the said metal layer is formed with copper, a cupric chloride solution, Examples thereof include a ferric chloride solution, an alkali etching solution, and a hydrogen peroxide-based etching solution. Among these, a ferric chloride solution is preferable from the viewpoint of an etching factor.
A pattern can be formed on the surface of the substrate by removing the pattern after performing the etching process in the etching step.
There is no restriction | limiting in particular as said pattern, According to the objective, it can select suitably, For example, a wiring pattern etc. are mentioned suitably.

-Plating process-
The plating step can be performed by an appropriately selected method selected from known plating processes.
Examples of the plating treatment include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high throw solder plating, watt bath (nickel sulfate-nickel chloride) plating, nickel plating such as nickel sulfamate, and hard plating. Examples thereof include gold plating such as gold plating and soft gold plating.
A pattern can be formed on the surface of the substrate by removing the pattern after plating by the plating step and further removing unnecessary portions by etching or the like as necessary.

  The pattern forming method of the present invention can form a permanent pattern with high definition and efficiency by suppressing distortion of an image formed on the pattern forming material, so that high-definition exposure is required. In particular, it can be suitably used for forming high-definition wiring patterns.

-Method for forming protective film and interlayer insulating film-
When the pattern forming method of the present invention is a pattern forming method of forming at least one of a protective film and an interlayer insulating film using a so-called solder resist, the pattern forming method of the present invention is used on a printed wiring board. A pattern can be formed and soldering can be performed as follows.
That is, the development step forms a hardened layer that is the permanent pattern, and the metal layer is exposed on the surface of the printed wiring board. Gold plating is performed on the portion of the metal layer exposed on the surface of the printed wiring board, and then soldering is performed. Then, a semiconductor or a component is mounted on the soldered portion. At this time, the permanent pattern by the hardened layer exhibits a function as a protective film or an insulating film (interlayer insulating film), and prevents external impact and conduction between adjacent electrodes.

  In the pattern forming method of the present invention, when the permanent pattern formed by the permanent pattern forming method is the protective film or the interlayer insulating film, the wiring can be protected from impact and bending from the outside. In the case of the interlayer insulating film, for example, it is useful for high-density mounting of semiconductors and components on a multilayer wiring board, a build-up wiring board, and the like.

-Printed wiring pattern formation method-
When the pattern forming method of the present invention is a pattern forming method for forming a printed wiring pattern, the pattern can be formed at a high speed, and thus can be widely used for forming various patterns. It can be suitably used for manufacturing, particularly for manufacturing a printed wiring board having a hole portion such as a through hole or a via hole.

  As a method for producing a printed wiring board having a hole portion such as the through hole or via hole by the pattern forming method of the present invention, (1) the pattern is formed on a printed wiring board forming substrate having a hole portion as the substrate. The forming material is laminated in such a positional relationship that the photosensitive layer is on the substrate side, and (2) if there is a support from the laminate, the support in the pattern forming material is removed ( 3) From the opposite side of the laminate to the base, the wiring pattern formation region and the hole portion formation region are irradiated with light in an inert gas atmosphere to cure the photosensitive layer, and (4) the photosensitive layer in the laminate. The pattern can be formed by developing and removing uncured portions in the laminate.

  Thereafter, in order to obtain a printed wiring board, a method of etching or plating the printed wiring board forming substrate using the formed pattern (for example, a known subtractive method or additive method (for example, a semi-additive method) And the full additive method)). Among these, in order to form a printed wiring board by industrially advantageous tenting, the subtractive method is preferable. After the treatment, the cured resin remaining on the printed wiring board forming substrate is peeled off. In the case of the semi-additive method, a desired printed wiring board can be manufactured by further etching the copper thin film portion after peeling. it can. A multilayer printed wiring board can also be manufactured in the same manner as the printed wiring board manufacturing method.

Next, the manufacturing method of the printed wiring board which has a through hole using the said pattern formation material is further demonstrated.
First, a printed wiring board forming substrate having through holes and having a surface covered with a metal plating layer is prepared. As the printed wiring board forming substrate, for example, a copper-clad laminate substrate and a substrate in which a copper plating layer is formed on an insulating base material such as glass-epoxy, or an interlayer insulating film is laminated on these substrates, and a copper plating layer is formed. A formed substrate (laminated substrate) can be used.

Next, when a protective film is provided on the pattern forming material, the protective film is peeled off so that the photosensitive layer in the pattern forming material is in contact with the surface of the printed wiring board forming substrate. Is used for pressure bonding (lamination process). Thereby, the laminated body which has the said board | substrate for printed wiring board formation and the said laminated body in this order is obtained.
There is no restriction | limiting in particular as lamination | stacking temperature of the said pattern formation material, For example, room temperature (15-30 degreeC) or under heating (30-180 degreeC) is mentioned, Among these, under heating (60-140 degreeC) ) Is preferred.
There is no restriction | limiting in particular as roll pressure of the said crimping | compression-bonding roll, For example, 0.1-1 Mpa is preferable.
There is no restriction | limiting in particular as the speed | rate of the said crimping | compression-bonding, and 1-3 m / min is preferable.
The printed wiring board forming substrate may be preheated or laminated under reduced pressure.

  In the formation of the laminate, the pattern forming material may be laminated on the printed wiring board forming substrate, and the pattern forming composition solution for producing the pattern forming material is used as the printed wiring board forming substrate. The photosensitive layer may be laminated on the printed wiring board forming substrate by directly applying to the surface of the substrate and drying.

  Next, the photosensitive layer is cured by irradiating light from the surface of the laminate opposite to the substrate in an inert atmosphere. At this time, in the case of a laminated transfer type material, exposure is performed after the support is peeled off (support peeling step).

  Next, the uncured region of the photosensitive layer on the printed wiring board forming substrate is dissolved and removed with an appropriate developer to form a pattern of the cured layer for forming the wiring pattern and the cured layer for protecting the metal layer of the through hole. And a metal layer is exposed on the surface of the printed wiring board forming substrate (developing step).

  Moreover, you may perform the process which further accelerates | stimulates the hardening reaction of a hardening part by post-heat processing or post-exposure processing as needed after image development. The development may be a wet development method as described above or a dry development method.

  Next, the metal layer exposed on the surface of the printed wiring board forming substrate is dissolved and removed with an etching solution (etching step). Since the opening of the through hole is covered with a cured resin composition (tent film), the metal plating of the through hole is predetermined without etching liquid entering the through hole and corroding the metal plating in the through hole. It will remain in the shape. Thus, a wiring pattern is formed on the printed wiring board forming substrate.

  There is no restriction | limiting in particular as said etching liquid, Although it can select suitably according to the objective, For example, when the said metal layer is formed with copper, a cupric chloride solution, a ferric chloride solution , Alkaline etching solutions, hydrogen peroxide-based etching solutions, and the like. Among these, ferric chloride solutions are preferable from the viewpoint of etching factors.

Next, it removes from the said board | substrate for printed wiring board formation by making the said hardened layer into a peeling piece with strong alkaline aqueous solution etc. (hardened | cured material removal process).
There is no restriction | limiting in particular as a base component in the said strong alkali aqueous solution, For example, sodium hydroxide, potassium hydroxide, etc. are mentioned.
As pH of the said strong alkali aqueous solution, about 12-14 are preferable, for example, and about 13-14 are more preferable.
There is no restriction | limiting in particular as said strong alkali aqueous solution, For example, 1-10 mass% sodium hydroxide aqueous solution or potassium hydroxide aqueous solution etc. are mentioned.

The printed wiring board may be a multilayer printed wiring board or a flexible substrate.
The pattern forming material may be used not only for the above etching process but also for a plating process. Examples of the plating method include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high-slow solder plating, watt bath (nickel sulfate-nickel chloride) plating, nickel plating such as nickel sulfamate, and hard plating. Gold plating such as gold plating and soft gold plating can be used.

-Color filter formation method-
When the pattern forming method of the present invention is a pattern forming method of forming a color filter using the color resist layer, pixels of three primary colors are formed on a transparent substrate such as a glass substrate by the pattern forming method of the present invention. Can be arranged in a mosaic or stripe form.
There is no restriction | limiting in particular as a dimension of each pixel, According to the objective, it can select suitably, For example, it is preferable to set it as 40-200 micrometers. In the case of a stripe shape, a width of 40 to 200 μm is usually used.
As the color filter forming method, for example, a photosensitive layer colored in black on a transparent substrate is used to perform exposure and development to form a black matrix, and then a photosensitive color that is colored in one of the three primary colors of RGB. A color filter in which the three primary colors of RGB are arranged in a mosaic or stripe pattern on the transparent substrate by repeating exposure and development for each color in a predetermined arrangement with respect to the black matrix using a layer. The method of forming is mentioned.
The color filter formed by the color filter forming method can be suitably used for a video camera, a monitor, a liquid crystal color television, and the like.

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto. The photosensitive layer formed in each example can be developed by applying energy of 50 mJ / cm ² at a wavelength of 350 nm or more and 450 nm or less by a spectrophotograph.

Example 1
A 16 μm thick polyethylene terephthalate film (manufactured by Toray Industries, Inc., 16QS52) as the support is coated with a pattern forming composition solution having the following composition and dried to form a 15 μm thick photosensitive layer on the support. Then, the pattern forming material was manufactured.

[Composition of pattern forming composition solution]
-Phenothiazine 0.0049 part by mass- Methacrylic acid / methyl methacrylate / styrene copolymer (copolymer composition (mass ratio): 29/19/52, mass average molecular weight: 60,000, acid value 189) 11.8 mass Part, polymerizable monomer represented by the following structural formula (78) 5.6 parts by mass, ½ molar ratio adduct of hexamethylene diisocyanate and tetraethylene oxide monomethacrylate 5.0 parts by mass, dodecapropylene glycol diacrylate 56 parts by weight, 2,2-bis (o-chlorophenyl) -4,4 ′, 5,5′-tetraphenylbiimidazole 1.7 parts by mass, 10-butyl-2-chloroacridone 0.09 parts by mass, DAIAMMOND GREEN (Hodogaya Chemical Co., Ltd., AIZEN DIAMOND GREEN GH 0.056 parts by mass Leuco crystal violet 0.1 part by weight Methyl ethyl ketone 40 parts by mass 1-Methoxy-2-propanol 20 parts by weight
-Fluorosurfactant (D780, manufactured by Dainippon Ink & Co., Ltd.) 0.021 parts by mass The diamond green is a dye.

However, m + n represents 10 in Structural Formula (78).

  On the photosensitive layer of the pattern forming material, a 20 μm-thick polypropylene film (manufactured by Oji Paper Co., Ltd., Alphan-200) was laminated as the protective film. Next, a laminator (MODEL8B-720-PH) was used as the substrate while peeling the protective film of the pattern forming material on the surface of a copper clad laminate (no through-hole, copper thickness 12 μm) polished, washed with water and dried. , Manufactured by Taisei Laminator Co., Ltd.) to prepare a laminate in which the copper-clad laminate, the photosensitive layer, and the polyethylene terephthalate film (support) were laminated in this order.

  The pressure bonding conditions were a pressure roll temperature of 105 ° C., a pressure roll pressure of 0.3 MPa, and a laminating speed of 1 m / min.

For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4.

<Maximum absorption wavelength and absorbance at that time>
The pattern forming material is irradiated with visible light gradually changing from a wavelength of 350 nm to 700 nm by a spectrophotometer UV2400 (manufactured by Shimadzu Corporation), the absorbance is measured, and the wavelength of the light having the maximum absorbance is determined. The maximum absorption wavelength of the dye was used. However, for a dye having an absorbance with a maximum value of 2 or more, the wavelength of light having the maximum value was taken as the maximum absorption wavelength of the dye. The results are shown in Table 3. In Table 3, “absorbance” refers to the absorbance at the maximum absorption wavelength derived from this dye.

<Minimum development time>
The polyethylene terephthalate film (support) is peeled off from the laminate, and a 1 mass% sodium carbonate aqueous solution at 30 ° C. is sprayed on the entire surface of the photosensitive layer on the copper clad laminate at a pressure of 0.15 MPa. The time required from the start of spraying until the photosensitive layer on the copper clad laminate was dissolved and removed was measured, and this was taken as the shortest development time.
As a result, the shortest development time was 10 seconds.

<Sensitivity>
(1) Measurement of sensitivity The pattern forming apparatus having a 405 nm laser light source as the light irradiating means from the polyethylene terephthalate film (support) side to the photosensitive layer of the pattern forming material in the laminated body was set to 0. Exposure was performed by irradiating with different light energy amounts from 1 mJ / cm ² to 100 mJ / cm ^{2 at} intervals of 2 ^1/2 times to cure a part of the photosensitive layer. After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) is peeled off from the laminate, and an aqueous sodium carbonate solution (30 ° C., 1% by mass) is sprayed on the entire surface of the photosensitive layer on the copper clad laminate. Spraying was performed at a pressure of 0.15 MPa for twice the shortest development time, and the uncured region was dissolved and removed, and the thickness of the portion other than the portion removed by development (cured region) was measured. Next, a sensitivity curve is obtained by plotting the relationship between the light irradiation amount and the thickness of the cured layer. From the sensitivity curve thus obtained, the light energy amount when the thickness of the cured region was 15 μm was determined as the minimum light energy amount (sensitivity) necessary for curing the photosensitive layer. The results are shown in Table 4. The pattern forming apparatus includes a light modulating unit made of the DMD and includes the pattern forming material.

(2) Sensitivity variation measurement With a safety light (yellow fluorescent lamp) (Hitachi, FLR40S-Y / MB), light is irradiated for 6 hours with an illuminance of 500 lx (measured by Minolta, T-1M). With respect to the laminate before irradiation and the laminate after the irradiation, the absolute value of the difference was measured as the amount of change in sensitivity by the measurement method (1). Moreover, when the value was 1.0% or less, it evaluated as (circle), and when it exceeded 1.0%, it evaluated as x. The sensitivity fluctuation amount and the evaluation results are shown in Table 4.

<Resolution>
The laminate was allowed to stand at room temperature (23 ° C., 55% RH) for 10 minutes, and line / space = 1 was used on the polyethylene terephthalate film (support) of the obtained laminate using the pattern forming apparatus. / 1, each line width was exposed in 1 μm increments from 5 μm to 20 μm in line width, and each line width was exposed in 5 μm increments from 20 μm to 50 μm in line width. The exposure amount at this time is the minimum amount of light energy necessary for curing the photosensitive layer of the pattern forming material obtained by the sensitivity measurement. After standing at room temperature for 10 minutes, the polyethylene terephthalate film (support) was peeled off from the laminate. An aqueous solution of sodium carbonate (30 ° C., 1% by mass) as the developer is sprayed over the entire surface of the photosensitive layer on the copper-clad laminate at a spray pressure of 0.15 MPa for twice the shortest development time to obtain an uncured area. Was dissolved and removed. The surface of the copper-clad laminate with the cured resin pattern thus obtained was observed with an optical microscope, and the minimum line width without any abnormalities such as tsumari and twisting was measured on the cured resin pattern line. did. The smaller the numerical value, the better the resolution. The results are shown in Table 4.

<Line width of resist pattern>
(1) Measurement of resist line width The laminate was allowed to stand at room temperature (23 ° C., 55% RH) for 10 minutes. From the obtained polyethylene terephthalate (support) of the laminate, the pattern forming apparatus is used to irradiate 20 patterns each having a 50 μm wide by 300 μm long hole at the bottom. And a part of the photosensitive layer was cured. The exposure amount at this time is the minimum amount of light energy necessary for curing the photosensitive layer of the pattern forming material obtained by the sensitivity measurement.
This was developed as described above to dissolve and remove uncured regions. The obtained pattern was observed with an optical microscope, the width of the bottom of the formed pattern was measured, the average value of the widths was determined, and this was used as the line width of the resist pattern.

(2) Measurement of variation in line width of resist pattern With safety light (yellow fluorescent lamp) (Hitachi, FLR40S-Y / MB), with 500 lx illuminance (measured by Minolta, T-1M) About the laminated body before irradiating light for 6 hours, and the laminated body after the said irradiation, the line width of a resist pattern is measured by the measuring method of (1), and the absolute value of the difference is the line width of the resist pattern. Measured as variation. Moreover, it evaluated as (circle) if the value was less than 1 micrometer, (triangle | delta) if it was 1-1.5 micrometer, and x if it exceeded 1.5 micrometer. Table 4 shows variations in the line width of the resist pattern and evaluation results thereof.

(Example 2)
In Example 1, the pattern forming material and the laminate are the same as Example 1 except that 0.016 parts by mass of DIAMOND GREEN and 0.056 parts by mass of BS RED-H (manufactured by LANXESS) are used as the dyes. Manufactured.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

(Example 3)
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.042 parts by mass of BS RED-T (manufactured by LANXESS) was used as the dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.
Example 4
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.102 parts by mass of VPB-NAPS (Hodogaya Kogyo Co., Ltd.) was used as the dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

(Example 5)
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.170 parts by mass of BS Redviolet R Gran (manufactured by LANXESS) was used as the dye.
About the said pattern formation material, maximum absorption wavelength and the light absorbency at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

(Example 6)
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.008 parts by mass of BS RED-T (manufactured by LANXESS) was used as the dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

(Example 7)
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.112 parts by mass of MACROLEX Blue 3R Gran (manufactured by Bayer Chemicals) was used as the dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

(Example 8)
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.112 parts by mass of MACROLEX Blue RR Gran (manufactured by Bayer Chemicals) was used as the dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

Example 9
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.0085 parts by mass of Orasol Blue BL (manufactured by Ciba Special Chemicals) was used as a dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.

(Comparative Example 1)
In Example 1, a pattern forming material and a laminate were produced in the same manner as in Example 1 except that 0.127 parts by mass of Orange 272 (manufactured by BASF) was used as a dye.
For the pattern forming material, the maximum absorption wavelength and the absorbance at that time were evaluated. The results are shown in Table 3.
The laminated body was evaluated for sensitivity, resolution, and resist pattern line width. The results are shown in Table 4. The shortest development time was 10 seconds.
From the results of Tables 3 and 4, it was found that the pattern forming materials of Examples 1 to 9 have little fluctuation in sensitivity and line width of the resist pattern, and can prevent light fogging under a safety light. In particular, Example 2 using a dye having a maximum absorption wavelength in a wavelength range of 500 nm or more and less than 575 nm and a dye having a maximum absorption wavelength in a wavelength range of 575 nm or more and 650 nm or less, and 2 in a wavelength range of 500 nm or more and 650 nm. In Examples 5 and 7 to 9 using dyes having two maximum absorption wavelengths, it was found that there was almost no variation in the line width of the resist pattern, and light fogging under a safety light could be prevented more reliably. On the other hand, in the comparative example, the sensitivity and the line width of the resist pattern varied greatly, and it was found that light fogging under a safety light could not be prevented.

The pattern forming material of the present invention has at least a photosensitive layer that can be developed on a support by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm or more and 450 nm or less,
In the case where the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . In addition, it contains at least one dye having a maximum absorption wavelength of 500 nm or more and 650 nm or less and can prevent light fogging under a safety light even in a highly sensitive photosensitive layer, and is suitable for use in the production of printed circuit boards. It is done.

FIG. 1 is an example of a partially enlarged view showing a configuration of a digital micromirror device (DMD). 2A and 2B are examples of explanatory diagrams for explaining the operation of the DMD. FIGS. 3A and 3B are examples of plan views showing the arrangement of the exposure beam and the scanning line in a case where the DMD is not inclined and in a case where the DMD is inclined. 4A and 4B are examples of diagrams illustrating examples of DMD usage areas. FIG. 5 is an example of a plan view for explaining an exposure method in which the photosensitive layer is exposed by one scanning by the scanner. 6A and 6B are examples of plan views for explaining an exposure method for exposing a photosensitive layer by a plurality of scans by a scanner. FIG. 7 is an example of a schematic perspective view illustrating an appearance of an example of the pattern forming apparatus. FIG. 8 is an example of a schematic perspective view illustrating the configuration of the scanner of the pattern forming apparatus. FIG. 9A is an example of a plan view showing an exposed region formed on the photosensitive layer, and FIG. 9B is an example of a diagram showing an array of exposure areas by each exposure head. FIG. 10 is an example of a perspective view showing a schematic configuration of an exposure head including light modulation means. FIG. 11 is an example of a sectional view in the sub-scanning direction along the optical axis showing the configuration of the exposure head shown in FIG. FIG. 12 is an example of a controller that controls DMD based on pattern information. FIG. 13A is an example of a cross-sectional view along the optical axis showing the configuration of another exposure head having a different coupling optical system. FIG. 13B is an example of a plan view showing a light image projected on the exposed surface when a microlens array or the like is not used. FIG. 13C is an example of a plan view showing a light image projected on the exposed surface when a microlens array or the like is used. FIG. 14 is an example of a diagram showing the distortion of the reflection surface of the micromirror constituting the DMD with contour lines. FIGS. 15A and 15B are examples of graphs showing the distortion of the reflection surface of the micromirror in the two diagonal directions of the mirror. FIG. 16 is an example of a front view (A) and a side view (B) of a microlens array used in the pattern forming apparatus. FIG. 17 is an example of a front view (A) and a side view (B) of the microlens constituting the microlens array. FIG. 18 is an example of a schematic diagram illustrating a condensing state by a microlens in one cross section (A) and another cross section (B). FIG. 19a is an example of a diagram showing a result of simulating the beam diameter in the vicinity of the condensing position of the microlens. FIG. 19B is an example of a diagram showing the same simulation result as that in FIG. 19A at another position. FIG. 19c is an example of a diagram showing the same simulation result as in FIG. 19a at another position. FIG. 19d is an example of a diagram showing the same simulation result as in FIG. 19a at another position. FIG. 20a is an example of a diagram showing the result of simulating the beam diameter in the vicinity of the condensing position of the microlens in the conventional pattern forming method. FIG. 20b is an example of a diagram showing the same simulation result as in FIG. 20a at another position. FIG. 20c is an example of a diagram showing the same simulation result as in FIG. 20a for another position. FIG. 20d is an example of a diagram illustrating simulation results similar to those in FIG. 20a at different positions. FIG. 21 is an example of a plan view showing another configuration of the combined laser light source. FIG. 22 shows an example of a front view (A) and an example of a side view (B) of the microlens constituting the microlens array. FIG. 23 is an example of a schematic diagram illustrating a light condensing state by the microlens of FIG. 22 in one cross section (A) and another cross section (B). FIGS. 24A to 24C are examples of explanatory diagrams about the concept of correction by the light amount distribution correction optical system. FIG. 25 is an example of a graph showing the light amount distribution when the light irradiation means has a Gaussian distribution and the light amount distribution is not corrected. FIG. 26 is an example of a graph showing the light amount distribution after correction by the light amount distribution correcting optical system. 27A (A) is a perspective view showing the configuration of the fiber array light source, FIG. 27A (B) is an example of a partially enlarged view of (A), and FIGS. 27A (C) and (D) are lasers. It is an example of the top view which shows the arrangement | sequence of the light emission point in an emission part. FIG. 27 b is an example of a front view showing the arrangement of light emitting points in the laser emission part of the fiber array light source. FIG. 28 is an example of a diagram illustrating a configuration of a multimode optical fiber. FIG. 29 is an example of a plan view showing the configuration of the combined laser light source. FIG. 30 is an example of a plan view showing the configuration of the laser module. FIG. 31 is an example of a side view showing the configuration of the laser module shown in FIG. 32 is a partial side view showing the configuration of the laser module shown in FIG. FIG. 33 is an example of a perspective view showing a configuration of a laser array. FIG. 34A is an example of a perspective view illustrating a configuration of a multicavity laser. FIG. 34B is an example of a perspective view of a multi-cavity laser array in which the multi-cavity lasers shown in FIG. 34A are arranged in an array. FIG. 35 is an example of a plan view showing another configuration of the combined laser light source. FIG. 36A is an example of a plan view illustrating another structure of the combined laser light source. FIG. 36B is an example of a cross-sectional view along the optical axis in FIG. FIGS. 37A and 37B are examples of cross-sectional views along the optical axis showing the difference between the depth of focus in the conventional exposure apparatus and the depth of focus by the pattern forming method (pattern forming apparatus) of the present invention. FIG. 38 is a graph showing the spectral distribution of the safety light source.

Explanation of symbols

LD1 to LD7 GaN-based semiconductor lasers 11 to 17 Collimator lens 20 Condensing lens 30 to 31 Multimode optical fiber 44 Collimator lens holder 45 Condensing lens holder 46 Fiber holder 50 Digital micromirror device (DMD)
52 Lens system 53 Reflected light image (exposure beam)
54 Lens of second imaging optical system 55 Micro lens array 56 Surface to be exposed (scanning surface)
55a Micro lens 57 Lens of second imaging optical system 58 Lens of second imaging optical system 59 Aperture array 64 Laser module 66 Fiber array light source 67 Lens system 68 Laser emitting unit 69 Mirror 70 Prism 73 Prism pair 74 Imaging lens 100 Heat block 110 Multi cavity laser 111 Heat block 113 Rod lens 120 Condensing lens 130 Multimode optical fiber 130a Core 140 Laser array 144 Light irradiation means 150 Photosensitive layer 152 Stage 155a Micro lens 156 Installation table 158 Guide 160 Gate 162 Scanner 164 Sensor 166 Exposure head 168 Exposure area 170 Exposed area 180 Heat block 184 Collimating lens array 302 Controller 30 4 Stage Drive Device 454 Lens System 468 Exposure Area 472 Micro Lens Array 476 Aperture Array 478 Aperture 480 Lens System

Claims (13)

On the support, at least a photosensitive layer that can be developed by applying energy of 50 mJ / cm ² or more at a wavelength of 350 nm or more and 450 nm or less,
In the case where the photosensitive layer exposes and develops the photosensitive layer, the minimum energy of light used for the exposure that does not change the thickness of the exposed portion of the photosensitive layer before and after the development is 1 to 20 mJ / cm ² . And a pattern forming material comprising at least one dye having a maximum absorption wavelength of 500 nm to 650 nm.   The pattern forming material according to claim 1, wherein an exposure wavelength when determining a minimum energy amount of light used for exposure is 395 to 415 nm.   The pattern forming material according to claim 1, wherein the maximum absorption wavelength of the dye is 2 or more at 500 nm or more and 650 nm or less.   The pattern forming material according to any one of claims 1 to 3, wherein any one of the dyes has a maximum absorption wavelength of 500 nm or more and less than 575 nm, and any one of the other dyes has a maximum absorption wavelength of 575 nm or more and 650 nm or less. .   The pattern forming material according to any one of claims 1 to 4, wherein the absorbance at a wavelength of 500 nm or more and 650 nm or less is 0.02 or more and 1 or less.   The photosensitive layer modulates the light from the light irradiating means by the light modulating means having n picture elements for receiving and emitting the light from the light irradiating means. 6. The pattern forming material according to claim 1, wherein the pattern forming material is exposed with light passing through a microlens array in which microlenses having aspherical surfaces capable of correcting aberrations are arranged.   The pattern forming material according to claim 1 is transferred under at least one of heating and pressurization and laminated on the surface of the substrate to form a photosensitive layer, and then the photosensitive layer is exposed. The pattern formation method characterized by developing.   8. The pattern forming method according to claim 7, wherein the exposure is performed using a light irradiation unit that irradiates light and a light modulation unit that modulates light emitted from the light irradiation unit based on pattern information to be formed.   The light modulation means further comprises a pattern signal generation means for generating a control signal based on the pattern information to be formed, and the light emitted from the light irradiation means corresponds to the control signal generated by the pattern signal generation means The pattern forming method according to claim 8, wherein the pattern is modulated.   The light modulation means has n picture element parts, and pattern information to form any less than n picture element parts continuously arranged from the n picture element parts. The pattern forming method according to claim 8, wherein the pattern forming method can be controlled accordingly.   The pattern forming method according to claim 8, wherein the light modulation means is a spatial light modulation element.   The pattern formation method according to claim 11, wherein the spatial light modulation element is a digital micromirror device (DMD). A pattern formed by the pattern forming method according to claim 7.