200529270 (1) 九、發明說明 【發明所屬之技術領域】 本發明是關於一種具備相對配置的基板、和配設於基 Η 板間的分隔件（spacer )構體之影像顯示裝置。 % 【先前技術】 近年來，就取代陰極線管（以下，稱爲CRT )的新世 0 代輕量、薄型顯示裝置而言，各種平面型影像顯示裝置備 受囑目。例如，正在進行表面傳導型電子射出裝置（以下 ，稱爲SED )的開發，作爲一種具有平面顯示裝置功能的 場效發射裝置（Field Emission device，FED)。 • 該SED具備保持預定間隔而相對配置的第1基板及第 • 2基板，而此等基板是經由矩形側壁，將周邊部彼此接合 ，而構成真空外圍器。在第1基板的內面形成有3色螢光 體層，在第2基板的內面配列有與各畫素對應的多數電子 φ 發射元件，作爲激勵螢光體的電子發射源。而各電子發射 元件是由電子發射部、在該電子發射部施加電壓的一對電 極等所構成。 SED中，將第1基板及第2基板間的空間，即真空外 圍器內，維持高真空度是很重要的。真空度低時，會使電 子發射元件的壽命減短，進而導致裝置的壽命減短。此外 ，由於第1基板與第2基板間是真空的，所以會對第1基 板、第2基板作用大氣壓。因此，爲了支持作用於此等基 板的大氣壓負載且維持基板間的間隙’故在兩基板間配置 -5- 2^00529270 (2) 有多數板狀或柱狀分隔件。 爲了將分隔件配置於第1基板及第2基板的整面，使 之不與第1基板的螢光體、第2基板的電子發射元件接觸 ，所以必須是極薄的板狀或極細的柱狀分隔件。由於這些 ^ 分隔件不得不與電子發射元件極靠近地設置，所以必須使 用絕緣體材料作爲分隔件。同時，檢討第1基板及第2基 板的薄板化時，必須有更多的分隔件，使得製造更加困難 p 。例如，在日本特開200 1 - 272927號公報中揭示有：在 支持基板上立設多數的柱狀分隔件而構成分隔件構體，並 將該分隔件構體配置於第1及第2基板間的裝置。 關於對於第1基板的螢光體間及第2基板的電子發射 元件間之分隔件的位置對準，可考慮瞄準螢光體間或電子 發射元件間，直接安裝分隔件的方法；或者在預先形成有 可供通過電子之電子束通過孔的金屬板上，以高位置精確 度形成多數分隔件，並使形成於該金屬板上的分隔件對準 φ 第1基板或第2基板的位置之方法。 後者的方法，根據例如日本特開2002 - 082850號公 報所揭示之方法時，令分別形成有與分隔件形狀對應之多 數孔的兩片成形模密接於金屬板的表面，並在該狀態下將 膠狀的分隔件形成材料充塡於成形模的孔。此外，分隔件 形成材料的溢出部分，可利用橡皮刮板（squeegee )刮除 成形模的表面來去除。繼之，提案有令使充塡的分隔件形 成材料在成形模內部硬化後，將兩片成形模從金屬板拆除 ’而製得形成於金屬板上之柱狀分隔件的方法等。 -6 - 2D0529270 (3) 上述方法中，將分隔件形成材料充塡至成形模時，若 金屬板與成形模沒有緊密地密接的話，則分隔件形成材料 會進入金屬板和成形模之間。此時，不僅無法形成正常形 狀的分隔件，也會有滲出的分隔件形成材料堵塞金屬板的 電子束通過孔之虞。電子束通過孔被堵塞的部位，電子束 無法到達螢光體，難以顯示所期望的影像。 滲到金屬板上的分隔件形成材料及接著劑成分，其滲 φ 出形狀不規則，且容易成爲放電的產生源。當分隔件形成 材料的滲出部分帶電時，自電子發射元件射出的電子束會 被受到滲出部分吸引，而偏離原來的軌道。結果，對於螢 光體層，電子束發生著點錯誤（miss landing )，而產生 顯示影像之色純度劣化的問題。 曰本特開200 1 — 229824號公報中，提案有製造影像 顯示裝置之真空外圍器的方法，係以預先將第1基板、第 2基板、分隔件構體設置於真空內，而維持密封後的真空 φ 度爲目的，在第1基板的金屬背層上塗佈吸氣層後，以挾 持分隔件構體之方式密封第1基板與第2基板的製造方法 〇 在以上述方式構成的SED中顯示影像時，可在第1基 板與第2基板之間施加例如1 0KV的高電壓，作爲電子束 的加速電壓。在高電壓下，與金屬背層疊合而設置吸氣層 時，在金屬背層和第1基板之間容易產生放電現狀。而且 ，產生放電時，會有螢光體層、金屬背層及第2基板上的 電子發射元件等受到破壞之虞。 200529270 (4) 又，在以上述方式構成的分隔件構體中，難以將所有 的分隔件以相同高度形成，而會有發生分隔件的高度不齊 的可能性。分隔件不齊時，難以藉由分隔件穩定地支持作 羲 用於第1基板及第2基板的大氣壓負載，故外圍器的耐大 氣壓強度會降低。此外，也會有在高度較高的分隔件作用 較大的負載，而損傷該分隔件之虞，此時，分隔件構體本 身的強度會降低。再者，當高度較低之分隔件的前端和基 g 板間形成間隙時，該間隙是導致放電產生的主要原因。 上述構成的SED中，分隔件及電子束通過孔相對於第 1基板及第2基板的位置對準是重要的課題。例如，形成 於支持基板的電子束通過孔及分隔件，必須以不會遮蔽自 電子發射元件射出的電子之形狀來設置。尤其，必須使支 持基板以高精度度對準第1基板及第2基板的位置，使自 電子發射元件射出而朝螢光體行進的電子束軌道不會受到 支持基板遮蔽。此問題在越大型且高精細度的顯示裝置中 φ 越嚴重。 又，顯示裝置大型化時，亦必須將分隔件及支持基板 所構成的分隔件構體本身大型化，然而既有的製造方法中 ，會有分隔件構體難以大型化的可能性。或者，可預知構 件製造成本很昂貴。在板狀的支持基板中，支持基板的尺 寸越大時，電子束通過孔的形成位置座標精確度會越劣化 【發明內容】 -8 - 200529270 (5) 本發明係有鑑於上述問題點而開發者，其目的在於提 供一種可抑制因分隔件形成材料的滲入而導致影像不良， 且可提升顯不品質的影像顯示裝置。 4 本發明之其他目的在於提供一種可抑制放電的產生， 同時可提升耐大氣壓強度的影像顯示裝置。 本發明之又一其他目的在於提供一種可大型化及高精 細化的影像顯不裝置。 p 爲了達成上述目的，本發明形態的影像顯示裝置係具 備：第1基板，其形成有螢光面；和第2基板，其與上述 第1基板保持間隙而相對配置，同時設有用以激勵上述螢 光面之複數電子發射源；和分隔件構體，其設置於上述第 1及第2基板間，而用以支持作用於上述第1及第2基板 之大氣壓負載， 並且上述分隔件構體具備：與上述第1及第2基板相 對，同時具有分別與上述電子發射源相對之複數電子束通 φ 過孔的板狀支持基板、和立設於上述支持基板之表面上的 複數分隔件，而上述複數電子束通過孔中，上述分隔件立 設位置附近的電子束通過孔，具有比其他電子束通過孔大 的面積 本發明形態的影像顯示裝置具備：第1基板，其具有 含螢光體層的螢光面、及與該螢光面疊合而設置的金屬背 層；和第2基板，其與上述第1基板保持間隙而相對配置 ，同時配置有朝上述螢光面射出電子的複數電子發射源； 和支持基板，其配設於上述第1及第2基板間，具有抵接 200529270 (6) 於上述第1基板的第1表面、及與上述第2基板相對的第 2表面、及與上述電子發射源相對的複數電子束通過孔， 同時藉由絕緣性物質被覆；和複數分隔件，其立設於上述 支持基板的第2表面與上述第2基板之間，而用以支持作 ' 用於第1及第2基板之大氣壓，而上述支持基板具有分別 抵接於上述分隔件，同時可在分隔件的高度方向彈性變形 而形成的複數高度緩和部。 g 本發明之其他形態的影像顯示裝置係具備：第1基板 ，具有含螢光體層的螢光面、及與該螢光面疊合而設置的 金屬背層、及與金屬背層疊合而形成的吸氣膜；和第2基 板，其與上述第1基板保持間隙而相對配置，同時配置有 朝上述螢光面射出電子的複數電子發射源；和支持基板， 其配設於上述第1及第2基板間，具有抵接於上述第1基 板的第1表面、及與上述第2基板相對的第2表面、及與 上述電子發射源相對的複數電子束通過孔、及形成於上述 φ 第1表面的複數凹部，同時藉由絕緣性物質被覆；和複數 分隔件，其立設於上述支持基板的第2表面和上述第2基 板之間，用以支持作用於上述第1及第2基板之大氣壓。 本發明之形態的影像顯示裝置具備：第1基板，其形 成有螢光面；和第2基板，其與上述第1基板保持間隙而 相對配置，同時設有用以激勵上述螢光面之複數電子發射 源；和複數分隔件構體，其分別設置於上述第1及第2基 板之間，而用以支持作用於上述第1及第2基板之大氣壓 負載，而上述各分隔件構體具備：與上述第1及第2基板 -10 - 200529270 (7) 相對’同時具有分別與上述電子發射源相對的複數電子束 通過孔之板狀支持基板，及立設於上述支持基板之表面上 的複數分隔件。 【實施方式】 以下，參佐圖面，詳細說明將本發明應用於平面型影 像顯示裝置之SED的第1實施形態。 g 如第1圖至第3圖所示，SED具備分別由矩形玻璃板 構成的第1基板1 0及第2基板1 2，且此等基板係保持約 1.0至2.0mm的間隙地相對配置。第1基板10及第2基 板12藉由玻璃所構成的矩形框狀側壁14，使周緣部彼此 相互接合，而構成內部維持真空的扁平真空外圍器15。 在第1基板10的內面，形成有具螢光面功能的螢光 體螢幕16。螢光體螢幕16是將發出紅、藍、綠之螢光體 層R、G、B及遮光層11排列而構成，而這些螢光體層係 φ 形成條紋狀、點（dot)狀或矩形。在螢光體螢幕16上， 依序形成由鋁等構成的金屬背層（metal back) 17及吸氣 (getter)膜 1 9。 在第2基板1 2的內面，分別形成有用以射出電子束 的多數表面傳導型電子發射元件18，作爲激勵螢光體螢幕 16之螢光體層R、G、B的電子發射源。這些電子發射元 件1 8係與各畫素對應而配列成複數行及複數列。各電子 發射元件18是由未圖示之電子發射部、和在該電子發射 部施加電壓之一對元件電極等所構成。在第2基板1 2的 -11 - 200529270 (8) 內面上，用以將電位供給至電子發射元件1 8的多數條配 線2 1係設成矩陣狀，且其端部係拉引至真空外圍器1 5的 外部。 具有接合構件功能的側壁1 4，是藉由例如低熔點玻璃 ‘ 、低熔點金屬等的密封材20，密封於第1基板1 0之周緣 部及第2基板1 2之周緣部，而將此等基板彼此接合。 如第2圖至第4圖所示，SED具有配設於第1基板10 φ 及第2基板12之間的分隔件（spacer )構體22。本實施 形態中，分隔件構體22是由：配設於第1及第2基板10 、1 2間之矩形金屬板所構成的支持基板24 ;及一體立設 於支持基板兩面的多數柱狀分隔件所構成。 更詳細闡述之，支持基板24具有與第1基板10之內 面相對的第1表面24 a、及與第2基板12之內面相對的第 2表面2 4b，並與此等基板平行配置。在支持基板24上， 藉由蝕刻等形成有多數電子束通過孔26。電子束通過孔 φ 26係在與真空外圔器15之長度方向平行的第1方向X， 經由橋接部（bridge ) 27以第1間距排列，同時在與第1 方向X直交的第2方向Y，以大於第1間距的第2間距排 列。電子束通過孔26分別與電子發射元件1 8相對而配列 ，得以透過從電子發射元件發射的電子束。 支持基板2 4係由例如鐵-鎳系金屬板，形成厚度0.1 至0.3mm。在支持基板24的表面形成有由構成金屬板之 元素所形成的氧化膜，例如由Fe304、NiFe2〇4所形成的 氧化膜。支持基板24的表面24a、24b與各電子束通過孔 -12- 200529270 (9) 26的壁面，係由具放電電流限制效果的高電阻膜所； 該高電阻膜係由以玻璃爲主成分的高電阻物質形成。 複數第1分隔件30a係一體立設於支持基板24 表面24a上，且分別位在排列於第2方向Y之電子束 孔26間。第1分隔件30a的前端係經由吸氣膜19、 背層17及螢光體螢幕16的遮光層11，抵接於第1 1 0的內面。 p 複數第2分隔件30b係一體立設於支持基板24纪 表面24b上，且分別位在排列於第2方向Y之電子束 孔26間。第2分隔件30b的前端係抵接於第2基板 內面。此處，各第2分隔件3 Ob的前端係位於設置於 基板12之內面上的配線21上。各第1及各第2分 3 0a、3 0b彼此整齊排列，並在將支持基板24從兩面 的狀態下，與支持基板一體形成。 第1及第2分隔件30a、30b分別形成從支持基: φ 側朝向延伸端，直徑逐漸變小的前端細錐狀。例如， 1分隔件3 0a具有大致橢圓狀的橫剖面形狀，形成位 持基板24側之基端的直徑約0.3mm X 2mm、延伸端的 約0.2mmx2mm、高度約0.6mm。各第2分隔件30b 大致橢圓狀的橫剖面形狀，形成位於支持基板24側 端的直徑約〇 · 3 m m X 2 m m、延伸端的直徑約0.2 m m X 、高度約〇 · 8 m m。 如第4圖所示，各電子束通過孔26係形成矩形 了分隔件立設位置附近的電子束通過孔外，其他的電 覆。 ΪΙ第1 通過 金屬 基板 ?第2 通過 12的 r第2 隔件 挾持 板24 各第 於支 直徑 具有 之基 2mm 。除 子束 -13- 200529270 (10) 通過孔26係分別形成第1方向X的尺寸爲〇.2mm、第2 方向的尺寸L1爲〇.2mm。電子束通過孔中，分隔件立設 位置附近的電子束通過孔26a係形成第1方向X的尺寸爲 0.2mm、第2方向的尺寸L2爲0.25 mm，具有比其他電子 束通過孔26更大的面積。此外，分隔件立設位置附近的 電子束通過孔26a係表示與第1及第2分隔件30a、30b 相對的電子束通過孔，本實施形態中，位於分隔件各側之 三個電子束通過孔26a的面積係大於其他電子束通過孔的 面積而形成。此種面積較大之電子束通過孔26a的數量並 不侷限於三個，亦可根據需要，在分隔件的單側形成四個 以上。 以上述方式構成的分隔件構體22係配設於第1基板 10及第2基板12間。藉由第1及第2分隔件30a、30b抵 接於第1基板1 〇及第2基板12的內面，得以支持作用於 此等基板的大氣壓負載，而將基板間的間隔維持在預定値 〇 SED具有：在支持基板24及第1基板10之金屬背層 1 7，施加電壓的未圖示電壓供給部。該電壓供給部係分別 與支持基板24及金屬背層17連接，例如在支持基板24 施加12kV的電壓，在金屬背層17施加10kV的電壓。在 SED中顯示影像時，係在螢光體螢幕16及金屬背層17施 加陽極電壓，藉由陽極電壓使從電子發射元件射出的電子 束加速而朝螢光體螢幕16撞擊。因此，螢光體螢幕16的 螢光體層被激勵而發光，而顯示影像。 14- 200529270 (11) 繼之，說明以上述方式構成之SED的製造方法。首先 ，說明關於分隔件構體22的製造方法。 如第5圖所示，準備預定尺寸的支持基板24、和與該 1 支持基板具有大致相同尺寸之矩形板狀的上模3 6a及下模 ' 36b。此時，將Fe— 50%Ni所構成之板厚0.12mm的支持 基板加以脫脂·洗淨·乾燥後，藉由蝕刻形成電子束通過 孔26、26a。將支持基板24整體施以氧化處理後，在含電 g 子束通過孔26、26a之內面的支持基板表面，形成絕緣膜 。再者，在絕緣膜上，將以玻璃爲主成分的塗佈液，塗佈 ，乾燥後，藉由燒成，形成高電阻膜。以此方式，製得支 持基板24。 作爲成形模的上模36a及下模36b，係由可透過紫外 線的透明材料，例如透明矽、透明聚對苯二甲酸乙二酯（ PET)等，形成平坦的板狀。上模36a具有：抵接於支持 基板2 4的平坦抵接面4 1 a ;及用以成形第1分隔件3 0 a之 鲁 多數有底的分隔件形成孔4 0 a。分隔件形成孔4 0 a分別在 上模3 0 a的抵接面4 1 a形成開口，同時保持預定間隔地配 列。同樣地，下模3 6 b具有：平坦的抵接面41 b ;及用以 成形第2分隔件30b之多數有底的分隔件形成孔4〇b。分 隔件形成孔4 0 b係分別在下模3 6 b的抵接面4 1 b形成開口 ，同時保持預定間隔地配列。 繼之，在上模36a的分隔件形成孔4〇a及下模36b的 分隔件形成孔4 0 b，充塡分隔件形成材料4 6。就分隔件形 成材料46而言，係使用至少含有紫外線硬化型黏合劑（ -15- 200529270 (12) binder)(有機成分）及玻璃塡料（glass filler)的玻璃 糊（glasspaste)。而玻璃糊的比重、黏度可適當選擇。 如第6圖所示，將上模3 6a定位且令抵接面4 1 a密接 於支持基板24的第1表面24a，使充塡有分隔件形成材料 ' 46的分隔件形成孔40a，分別與鄰接之電子束通過孔26 間的區域相對。同樣地，將下模36b定位且令抵接面41b 密接於支持基板24的第2表面24b，使各分隔件形成孔 g 40b與鄰接之電子束通過孔2 6間的區域相對。此外，亦可 在支持基板 24的分隔件立設位置，藉由點膠機（ dispenser )或印刷，預先塗佈接著劑。如上所述，構成由 支持基板2 4、上模3 6 a及下模3 6 b所形成的組裝體4 2。 在組裝體42中，上模36a的分隔件形成孔40a與下模3 6b 的分隔件形成孔40b，係夾著支持基板24相對配列。 繼之，藉由配置於上模36a及下模36b之外側的紫外 線燈管62a、62b，朝上模及下模照射紫外線（UV )。上 φ 模3 6 a及下模3 6 b是分別由紫外線透過材料形成者。因此 ，從紫外線燈管6 2 a、6 2 b照射的紫外線，會透過上模3 6 a 及下模36b，照射在所充塡的分隔件形成材料46。以此方 式’可在維持組裝體4 2密接的狀態下，使分隔件形成材 料46紫外線硬化。 如第7圖所示，將上模36a及下模36b從支持基板24 脫模，使硬化的分隔件形成材料4 6殘留於支持基板2 4上 。其後，將設有分隔件形成材料46的支持基板24在加熱 爐內進行熱處理，待黏合劑自分隔件形成材料內發散後， -16- 200529270 (13) 以約500至5 5 0t，約30分至1小時，將分隔件形成材料 正式煅燒。以此方式，可獲得支持基板24上形成有第1 及第2分隔件30a、30b的分隔件構體22。 另一方面，在SED的製造中，事先準備：設有螢光體 _ 螢幕16及金屬背層17的第1基板10;和設有電子發射元 件1 8及配線21，同時與側壁14接合的第2基板12。然 後，將以上述方式獲得的分隔件構體22定位配置於第2 p 基板12上。在該狀態下，將第1基板10、第2基板12及 分隔件構體22配置於真空室內，並將真空室內真空排氣 後，經由側壁14將第1基板與第2基板接合。以此方式 ，可製造具備分隔件構體22的SED。 根據以上述方式構成的SED，支持基板24所形成的 複數電子束通過孔26中，分隔件立設位置附近之電子束 通過孔26a的面積係大於其他電子束通過孔的面積而形成 。故，製造分隔件構體時，即使是分隔件形成材料滲入電 φ 子束通過孔26a內的情況，相對於電子束通過孔整體之面 積，被分隔件形成材料堵塞之面積的比例也會變小。因此 ，可防止通過電子束通過孔26a的電子束，碰觸到滲出的 分隔件形成材料。通常，滲進電子束通過孔側的分隔件形 成材料，會沿著電子束通過孔端緣擴延。所以，藉由使電 子束通過孔26a的面積變大，使孔端緣變長，可減少分隔 件形成材料於電子束通過孔內的溢出量。結果，可防止通 過電子束通過孔26a的電子束，碰觸到滲出的分隔件形成 材料。藉由上述構成，可提供一種得以抑制分隔件形成材 -17- 200529270 (14)200529270 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to an image display device having a substrate disposed oppositely and a spacer structure arranged between the substrates. % [Previous technology] In recent years, in the new generation of the light weight and thin display devices of the Gen 0 replacing the cathode-ray tubes (hereinafter referred to as CRTs), various flat-type image display devices have been proposed. For example, the development of a surface-conduction electron emission device (hereinafter referred to as SED) is being carried out as a field emission device (FED) having a function of a flat display device. • This SED includes a first substrate and a second substrate that are arranged opposite to each other at a predetermined interval. These substrates are connected to each other via rectangular side walls to form a vacuum peripheral. A three-color phosphor layer is formed on the inner surface of the first substrate, and a plurality of electron φ emitting elements corresponding to each pixel are arranged on the inner surface of the second substrate as an electron emission source for exciting the phosphor. Each electron-emitting element is composed of an electron-emitting portion, a pair of electrodes to which a voltage is applied to the electron-emitting portion, and the like. In the SED, it is important to maintain a high degree of vacuum in the space between the first substrate and the second substrate, that is, in the vacuum peripheral. When the vacuum degree is low, the life of the electron-emitting device is shortened, and the life of the device is shortened. In addition, since the first substrate and the second substrate are vacuumed, atmospheric pressure is applied to the first substrate and the second substrate. Therefore, in order to support the atmospheric pressure load acting on these substrates and maintain the gap between the substrates', -5- 2 ^ 00529270 is arranged between the two substrates (2) There are many plate-shaped or column-shaped spacers. In order to arrange the spacers on the entire surface of the first substrate and the second substrate so as not to contact the phosphors of the first substrate and the electron-emitting elements of the second substrate, they must be extremely thin plates or extremely thin columns. Shaped partitions. Since these spacers have to be placed very close to the electron-emitting element, an insulator material must be used as the spacer. At the same time, when reviewing the thinning of the first substrate and the second substrate, more spacers must be made, making it more difficult to manufacture p. For example, Japanese Patent Application Laid-Open No. 200 1-272927 discloses that a plurality of columnar spacers are erected on a supporting substrate to constitute a spacer structure, and the spacer structures are arranged on the first and second substrates. Device. Regarding the alignment of the spacers between the phosphors on the first substrate and the electron-emitting elements on the second substrate, a method of directly mounting the spacers between the phosphors or the electron-emitting elements may be considered; or A plurality of spacers are formed with high position accuracy on a metal plate on which an electron beam passing hole through which electrons pass is formed, and the spacers formed on the metal plate are aligned with the position of the φ first substrate or the second substrate. method. In the latter method, for example, according to the method disclosed in Japanese Patent Application Laid-Open No. 2002-082850, two forming molds each having a plurality of holes corresponding to the shape of the separator are closely adhered to the surface of the metal plate, and in this state, The gel-like separator forms a hole in which the material fills the forming die. In addition, the overflow portion of the separator forming material can be removed by scraping the surface of the forming die with a squeegee. Next, a method has been proposed in which the filled spacer forming material is hardened inside the forming mold, and two pieces of the forming mold are removed from the metal plate to obtain a columnar separator formed on the metal plate. -6-2D0529270 (3) In the above method, when the spacer forming material is filled in the forming die, if the metal plate and the forming die are not tightly in contact, the spacer forming material may enter between the metal plate and the forming die. At this time, not only the separator having a normal shape cannot be formed, but also an exuded separator forming material may block the electron beam passage holes of the metal plate. The electron beam passes through the part where the hole is blocked, the electron beam cannot reach the phosphor, and it is difficult to display a desired image. The separator forming material and the adhesive component infiltrated on the metal plate are irregular in shape and can easily become a source of electric discharge. When the exudation portion of the separator-forming material is charged, the electron beam emitted from the electron emitting element is attracted by the exudation portion and deviates from the original orbit. As a result, with respect to the phosphor layer, a miss landing occurs in the electron beam, which causes a problem that the color purity of a displayed image is deteriorated. Japanese Patent Application Laid-Open No. 200 1-229824 proposes a method for manufacturing a vacuum peripheral for an image display device. The first substrate, the second substrate, and the spacer structure are set in a vacuum in advance, and the seal is maintained. For the purpose of vacuum φ degree, after coating the getter layer on the metal back layer of the first substrate, the method for manufacturing the first substrate and the second substrate is sealed by holding the spacer structure. In the SED structured as described above, When displaying an image in the middle, a high voltage of, for example, 10 kV can be applied between the first substrate and the second substrate as an acceleration voltage of the electron beam. When a gettering layer is provided by laminating with a metal back at a high voltage, a state of discharge easily occurs between the metal back layer and the first substrate. In addition, when a discharge occurs, the phosphor layer, the metal back layer, and the electron-emitting elements on the second substrate may be damaged. 200529270 (4) Furthermore, in the separator structure configured as described above, it is difficult to form all the separators at the same height, and there is a possibility that the heights of the separators are not uniform. When the spacers are not uniform, it is difficult to stably support the spacers for the atmospheric pressure load applied to the first substrate and the second substrate. Therefore, the atmospheric pressure resistance of the peripheral device is reduced. In addition, there is a possibility that a larger load acts on the spacer having a higher height, and the spacer may be damaged. At this time, the strength of the spacer structure itself may be reduced. Furthermore, when a gap is formed between the front end of the lower-level separator and the base plate, the gap is the main cause of the discharge. In the SED structured as described above, alignment of the spacer and the electron beam passing hole with respect to the first substrate and the second substrate is an important issue. For example, the electron beam passing holes and the spacers formed in the support substrate must be provided in a shape that does not shield the electrons emitted from the electron emitting elements. In particular, it is necessary to align the supporting substrate with the positions of the first substrate and the second substrate with high accuracy so that the electron beam track emitted from the electron emitting element and traveling toward the phosphor is not blocked by the supporting substrate. This problem is more serious in larger and higher-definition display devices. In addition, when the display device is enlarged, it is also necessary to enlarge the separator structure itself composed of the separator and the supporting substrate. However, in the conventional manufacturing method, it may be difficult to increase the size of the separator structure. Alternatively, it is foreseeable that the component is expensive to manufacture. In a plate-shaped support substrate, the larger the size of the support substrate, the worse the coordinate accuracy of the formation position of the electron beam passing hole will be deteriorated. [Summary of the Invention] -8-200529270 (5) The present invention was developed in view of the above problems It is an object of the present invention to provide an image display device capable of suppressing defective images due to infiltration of a separator-forming material and improving display quality. 4 Another object of the present invention is to provide an image display device capable of suppressing the occurrence of electric discharge and improving the atmospheric pressure resistance. Still another object of the present invention is to provide an image display device which can be enlarged and refined. In order to achieve the above object, the image display device according to the aspect of the present invention includes: a first substrate having a fluorescent surface formed thereon; and a second substrate which is disposed opposite to the first substrate while maintaining a gap therebetween, and is also provided to excite the foregoing A plurality of electron emission sources on a fluorescent surface; and a spacer structure provided between the first and second substrates to support atmospheric pressure loads acting on the first and second substrates, and the spacer structure A plate-shaped support substrate facing the first and second substrates, and having a plurality of electron beam passing φ vias respectively facing the electron emission sources, and a plurality of spacers standing on the surface of the support substrate, In the plurality of electron beam passage holes, the electron beam passage holes near the stand-up position of the separator have a larger area than other electron beam passage holes. The image display device according to the aspect of the present invention includes a first substrate having fluorescent light A phosphor layer on the bulk layer, and a metal back layer provided on the phosphor layer; and a second substrate, which is disposed opposite to the first substrate while maintaining a gap therebetween, and is disposed at the same time A plurality of electron emission sources that emit electrons toward the fluorescent surface; and a supporting substrate, which is disposed between the first and second substrates and has a contact 200529270 (6) on the first surface of the first substrate and the first surface A second surface opposite to the second substrate, and a plurality of electron beam passing holes opposite to the electron emission source, while being covered with an insulating substance; and a plurality of spacers standing on the second surface of the support substrate and the first substrate The two substrates are used to support the atmospheric pressure used for the first and second substrates, and the support substrates have a plurality of heights formed by abutting on the spacers and being elastically deformable in the height direction of the spacers. Mitigation Department. g An image display device according to another aspect of the present invention includes a first substrate having a fluorescent surface including a phosphor layer, a metal back layer provided on top of the fluorescent surface, and a laminate formed on the metal back. A getter film; and a second substrate disposed opposite to the first substrate while maintaining a gap therebetween, and provided with a plurality of electron emission sources that emit electrons toward the fluorescent surface; and a support substrate disposed on the first and the first substrates. The second substrate has a first surface in contact with the first substrate, a second surface facing the second substrate, a plurality of electron beam passage holes facing the electron emission source, and a plurality of holes formed in the φth A plurality of concave portions on the first surface, which are simultaneously covered with an insulating substance; and a plurality of spacers which are erected between the second surface of the support substrate and the second substrate to support the first and second substrates. Atmospheric pressure. An image display device according to an aspect of the present invention includes a first substrate having a fluorescent surface formed thereon, and a second substrate disposed opposite to the first substrate while maintaining a gap therebetween, and provided with a plurality of electrons for exciting the fluorescent surface. An emission source; and a plurality of spacer structures, which are respectively disposed between the first and second substrates to support atmospheric pressure loads acting on the first and second substrates, and each of the spacer structures includes: (1) Opposite to the first and second substrates -10-200529270 (7) A plate-shaped support substrate having a plurality of electron beam passage holes opposite to the above-mentioned electron emission sources, and a plurality of support substrates standing on the surface of the support substrate Divider. [Embodiment] Hereinafter, a first embodiment of the SED in which the present invention is applied to a flat-type image display device will be described in detail with reference to the drawings. g As shown in Figs. 1 to 3, the SED includes a first substrate 10 and a second substrate 12 each made of a rectangular glass plate, and these substrates are arranged opposite each other with a gap of about 1.0 to 2.0 mm. The first substrate 10 and the second substrate 12 have rectangular frame-shaped side walls 14 made of glass, and the peripheral edge portions are joined to each other to form a flat vacuum peripheral 15 that maintains a vacuum inside. On the inner surface of the first substrate 10, a phosphor screen 16 having a phosphor function is formed. The phosphor screen 16 is formed by arranging red, blue, and green phosphor layers R, G, B, and a light-shielding layer 11, and these phosphor layers are formed in a stripe, dot, or rectangular shape. On the phosphor screen 16, a metal back 17 made of aluminum or the like and a getter film 19 are formed in this order. On the inner surface of the second substrate 12, a plurality of surface-conduction electron emission elements 18 for emitting an electron beam are formed as electron emission sources for exciting the phosphor layers R, G, and B of the phosphor screen 16, respectively. These electron emitting elements 18 are arranged in plural rows and plural columns corresponding to each pixel. Each electron-emitting element 18 is composed of an electron-emitting portion (not shown), a pair of element electrodes, and the like by applying a voltage to the electron-emitting portion. On the inner surface of the second substrate 1 2-11-200529270 (8), a plurality of wirings 2 1 for supplying potentials to the electron emitting elements 18 are arranged in a matrix, and the ends thereof are pulled to a vacuum. Peripherals 1 to 5 outside. The side wall 14 having the function of a bonding member is sealed to the peripheral edge portion of the first substrate 10 and the peripheral edge portion of the second substrate 12 with a sealing material 20 such as low-melting-point glass' or a low-melting-point metal. The substrates are bonded to each other. As shown in FIGS. 2 to 4, the SED includes a spacer structure 22 disposed between the first substrate 10 φ and the second substrate 12. In this embodiment, the spacer structure 22 is composed of a support substrate 24 composed of rectangular metal plates disposed between the first and second substrates 10 and 12, and a plurality of columnar shapes integrally provided on both sides of the support substrate. Composed of dividers. To explain in more detail, the support substrate 24 has a first surface 24a opposed to the inner surface of the first substrate 10 and a second surface 24b opposed to the inner surface of the second substrate 12, and is arranged in parallel with these substrates. A plurality of electron beam passage holes 26 are formed in the support substrate 24 by etching or the like. The electron beam passing holes φ 26 are in a first direction X parallel to the length direction of the vacuum envelope 15, and are arranged at a first pitch via a bridge 27, and in a second direction Y orthogonal to the first direction X , Arranged at a second pitch greater than the first pitch. The electron beam passing holes 26 are arranged opposite to the electron emitting elements 18, respectively, so that the electron beams emitted from the electron emitting elements can be transmitted. The supporting substrate 24 is formed of, for example, an iron-nickel metal plate and has a thickness of 0.1 to 0.3 mm. An oxide film made of elements constituting a metal plate, such as an oxide film made of Fe304 and NiFe204, is formed on the surface of the support substrate 24. The surfaces 24a, 24b of the supporting substrate 24 and the walls of each electron beam passing hole-12-200529270 (9) 26 are made of a high-resistance film with a discharge current limiting effect; the high-resistance film is made of glass High-resistance substances are formed. The plurality of first spacers 30a are integrally erected on the surface 24a of the support substrate 24, and are respectively located between the electron beam holes 26 arranged in the second direction Y. The front end of the first separator 30a is in contact with the inner surface of the first 10 through the getter film 19, the back layer 17, and the light shielding layer 11 of the phosphor screen 16. The p plurality of second spacers 30b are integrally erected on the 24th surface 24b of the support substrate, and are respectively located between the electron beam holes 26 arranged in the second direction Y. The front end of the second spacer 30b is in contact with the inner surface of the second substrate. Here, the tip of each second spacer 3 Ob is located on a wiring 21 provided on the inner surface of the substrate 12. Each of the first and second points 3aa, 3b is aligned with each other, and is formed integrally with the support substrate with the support substrate 24 on both sides. The first and second spacers 30a and 30b are respectively formed in a tapered shape from the support base: φ side toward the extended end, and the diameter gradually decreases. For example, 1 spacer 30a has a substantially elliptical cross-sectional shape, and has a diameter of about 0.3 mm x 2 mm at the base end of the holding substrate 24 side, about 0.2 mm x 2 mm at the extended end, and a height of about 0.6 mm. Each of the second spacers 30b has a substantially elliptical cross-sectional shape, and is formed at a side end of the support substrate 24 with a diameter of about 0.3 m X 2 m m, an extended end diameter of about 0.2 m m X, and a height of about 0.8 m. As shown in Fig. 4, each of the electron beam passing holes 26 is formed in a rectangular shape, and the electron beam passing holes near the stand-up position of the separator are covered with other electrons. The first pass through the metal substrate and the second pass through the r second spacer holding plate 24 each have a base of 2 mm in diameter at the support. Diode beam -13- 200529270 (10) The size of the first direction X is 0.2 mm, and the size of the second direction L1 is 0.2 mm through the holes 26 series. In the electron beam passing hole, the electron beam passing hole 26 a near the stand-up position is formed to have a size of 0.2 mm in the first direction X and 0.25 mm in the second direction L2, which is larger than other electron beam passing holes 26. Area. In addition, the electron beam passage holes 26a near the standing position of the spacers are electron beam passage holes facing the first and second spacers 30a, 30b. In this embodiment, three electron beams located on each side of the spacer pass through. The area of the hole 26a is larger than that of other electron beam passing holes. The number of such large-area electron beam passage holes 26a is not limited to three, and four or more may be formed on one side of the separator as required. The separator structure 22 configured as described above is disposed between the first substrate 10 and the second substrate 12. The first and second spacers 30a and 30b are in contact with the inner surfaces of the first substrate 10 and the second substrate 12, thereby supporting the atmospheric pressure load acting on these substrates and maintaining the interval between the substrates at a predetermined level. 〇SED includes a voltage supply unit (not shown) that applies a voltage to the metal back layer 17 of the support substrate 24 and the first substrate 10. This voltage supply unit is connected to the support substrate 24 and the metal back layer 17, respectively. For example, a voltage of 12 kV is applied to the support substrate 24, and a voltage of 10 kV is applied to the metal back layer 17. When an image is displayed in the SED, an anode voltage is applied to the phosphor screen 16 and the metal back layer 17, and the electron beam emitted from the electron-emitting element is accelerated by the anode voltage to strike the phosphor screen 16. Therefore, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed. 14- 200529270 (11) Next, the manufacturing method of the SED configured as described above will be described. First, a method for manufacturing the spacer structure 22 will be described. As shown in FIG. 5, a support substrate 24 having a predetermined size and a rectangular plate-shaped upper mold 36a and a lower mold 36b having substantially the same size as the one support substrate are prepared. At this time, a support substrate having a thickness of 0.12 mm made of Fe-50% Ni was degreased, washed, and dried, and then electron beam passage holes 26 and 26a were formed by etching. After the entire supporting substrate 24 is subjected to an oxidation treatment, an insulating film is formed on the surface of the supporting substrate including the inner surfaces of the electric g-beam passing holes 26 and 26a. Furthermore, a coating liquid containing glass as a main component is coated on the insulating film, dried, and then fired to form a high-resistance film. In this manner, the supporting substrate 24 is produced. The upper mold 36a and the lower mold 36b, which are forming molds, are formed into a flat plate shape from a transparent material that can transmit ultraviolet rays, such as transparent silicon, transparent polyethylene terephthalate (PET), and the like. The upper mold 36a has a flat abutment surface 4a that abuts on the support substrate 24, and a plurality of bottomed spacers for forming the first spacer 30a. The holes 40a are formed. The spacer-forming holes 40a form openings in the abutment surfaces 4a of the upper mold 30a, respectively, while being arranged at predetermined intervals. Similarly, the lower mold 3 6 b has a flat abutting surface 41 b and a plurality of bottomed spacer forming holes 40 b for forming the majority of the second spacer 30 b. The spacer forming holes 4 0 b are formed in the abutment surfaces 4 1 b of the lower mold 3 6 b respectively, and are arranged at a predetermined interval. Next, the spacer forming hole 40a in the upper die 36a and the spacer forming hole 40b in the lower die 36b are filled with the spacer forming material 46. As the separator-forming material 46, a glass paste containing at least an ultraviolet curing adhesive (-15-200529270 (12) binder) (organic component) and a glass filler is used. The specific gravity and viscosity of the glass paste can be appropriately selected. As shown in FIG. 6, the upper mold 36a is positioned so that the abutment surface 41a is in close contact with the first surface 24a of the support substrate 24, so that the spacer forming holes 40a filled with the spacer forming material 46 are respectively Opposite the area between the adjacent electron beam passing holes 26. Similarly, the lower mold 36b is positioned so that the abutting surface 41b is in close contact with the second surface 24b of the support substrate 24, and each partition forming hole g40b is opposed to the area between the adjacent electron beam passing holes 26. In addition, an adhesive may be applied in advance at a stand-up position of the partition supporting the substrate 24 by a dispenser or printing. As described above, the assembly 4 2 formed by the support substrate 2 4, the upper mold 3 6 a and the lower mold 3 6 b is configured. In the assembly 42, the spacer forming holes 40 a of the upper mold 36 a and the spacer forming holes 40 b of the lower mold 36 b are arranged opposite to each other with the supporting substrate 24 therebetween. Next, ultraviolet rays (UV) are radiated toward the upper and lower molds by the ultraviolet lamp tubes 62a and 62b arranged outside the upper and lower molds 36a and 36b. The upper φ die 3 6 a and the lower die 3 6 b are each formed of an ultraviolet transmitting material. Therefore, the ultraviolet rays irradiated from the ultraviolet lamp tubes 6 2 a and 6 2 b pass through the upper mold 3 6 a and the lower mold 36 b and irradiate the filled spacer forming material 46. In this manner, the spacer-forming material 46 can be UV-cured while maintaining the assembled body 42 tightly attached. As shown in FIG. 7, the upper mold 36 a and the lower mold 36 b are released from the support substrate 24, and the hardened spacer forming material 46 is left on the support substrate 24. Thereafter, the support substrate 24 provided with the spacer-forming material 46 is heat-treated in a heating furnace. After the adhesive is dispersed from the spacer-forming material, -16-200529270 (13) is about 500 to 5 5 0t, about From 30 minutes to 1 hour, the separator-forming material is formally calcined. In this way, the spacer structure 22 in which the first and second spacers 30 a and 30 b are formed on the support substrate 24 can be obtained. On the other hand, in the manufacture of SED, the following are prepared in advance: a first substrate 10 provided with a phosphor_screen 16 and a metal back layer 17; The second substrate 12. Then, the spacer structure 22 obtained in the above manner is positioned and disposed on the second p substrate 12. In this state, the first substrate 10, the second substrate 12, and the spacer structure 22 are placed in a vacuum chamber, and the vacuum chamber is evacuated, and then the first substrate and the second substrate are bonded via the side wall 14. In this manner, an SED including the spacer structure 22 can be manufactured. According to the SED structured as described above, in the plurality of electron beam passage holes 26 formed in the support substrate 24, the area of the electron beam passage holes 26a near the stand-up position is larger than that of other electron beam passage holes. Therefore, when the separator structure is manufactured, even if the separator forming material penetrates into the electric φ sub-beam passing hole 26a, the proportion of the area blocked by the separator forming material with respect to the entire area of the electron beam passing hole changes. small. Therefore, it is possible to prevent the electron beam passing through the electron beam passing hole 26a from coming into contact with the oozing separator-forming material. Generally, a material formed by the infiltrating electron beam passing through the side of the hole will spread along the edge of the electron beam passing through the hole. Therefore, by increasing the area of the electron beam passing hole 26a and making the edge of the hole longer, it is possible to reduce the amount of overflow of the spacer forming material in the electron beam passing hole. As a result, it is possible to prevent the electron beam passing through the electron beam passing hole 26a from coming into contact with the oozing separator-forming material. With the above configuration, a separator-forming material can be provided. -17- 200529270 (14)
料之滲出所導致的影像不良，而顯示品質得以提升的SED 〇 ， 再者’根據本實施形態，電子束通過孔26a係形成矩 形’藉由擴大其配列間距較大之第2方向的尺寸，可形成 比其他電子束通過孔更大的面積。此時，不須將位於排列 於第1方向X之電子束通過孔間的橋接部27寬度縮小， 而可防止支持基板2 4的強度降低。 | 繼之’說明關於本發明之第2實施形態的SED分隔件 構體22。如第8圖所示，支持基板24上所形成的複數電 子束通過孔26中，在分隔件立設位置附近，構成排列於 第1方向X的複數電子束通過孔彼此連續且細長的矩形開 孔26a。本實施形態中，細長的開孔26a係分別形成於分 隔件的兩側，各開孔26a係將例如四個的電子束通過孔連 通而構成。除了分隔件立設位置附近的電子束通過孔外， 其他的電子束通過孔26係分別形成第1方向X的尺寸爲 φ 〇.2mm、第2方向的尺寸L1爲0.2mm。相對於此，各開孔 26a之第1方向X的尺寸大約是電子束通過孔26的4倍 ，其第2方向的尺寸L2則形成0.25mm，具有比其他電子 束通過孔26更大的面積。各開孔26a並不侷限於四個電 子束通過孔，亦可形成連續兩個、三個、或五個以上的尺 寸。 第2實施形態中，SED的其他構成係與上述第1實施 形態相同’而在相同的部分添附相同的參考符號，以省略 其詳細說明。 200529270 (15) 根據上述第2實施形態，支持基板24上所形成的複 數電子束通過孔26中，分隔件立設位置附近的電子束通 過孔26係由將複數電子束通過孔連通的細長開孔所形成 ，而形成比其他電子束通過孔大的面積。故，製造分隔件 構體時，即使是分隔件形成材料滲入電子束通過孔26a內 的情況，相對於電子束通過孔整體之面積，被分隔件形成 材料堵塞之面積的比例也會變小。因此，可防止通過電子 p 束通過孔26a的電子束，碰觸到滲出的分隔件形成材料。 通常，滲進電子束通過孔側的分隔件形成材料，會沿著電 子束通過孔端緣擴延。所以，藉由使電子束通過孔26a的 面積變大，使孔端緣變長，可減少分隔件形成材料溢入電 子束通過孔內的量。結果，可防止通過電子束通過孔26a 的電子束，碰觸到滲出的分隔件形成材料。藉由上述構成 ，可提供一種得以抑制分隔件形成材料的滲出所導致的影 像不良，而顯示品質得以提升的SED。 φ 上述實施形態中，分隔件構體22係構成一體具備第i 及第2分隔件及支持基板，然而，第2分隔件30b亦可構 成形成於第2基板1 2上。又，分隔件構體亦可構成僅具 備支持基板及第2分隔件，而支持基板與第1基板接觸。 如第9圖所示，根據本發明第3實施形態的SED，分 隔件構體22具有：由矩形金屬板構成的支持基板24 ;和 僅一體立設於支持基板之一邊表面的多數柱狀分隔件3 0。 支持基板24具有與第1基板10之內面相對的第1表面 24a，及與第2基板12之內面相對的第2表面24b，並與 -19- 200529270 (16) 此等基板平行配置。在支持基板24上，藉由蝕刻等形成 有多數電子束通過孔26。電子束通過孔26係在與真空外 圍器15之長度方向平行的第1方向X，藉由橋接部27以 第1間距排列，同時在與第1方向直交的第2方向Y，以 大於第1間距的第2間距排列。電子束通過孔26分別與 電子發射元件1 8相對而配列，得以透過從電子發射元件 射出的電子束。 p 支持基板之第1及第2表面24a、24b、各電子束通過 孔26的內壁面，係藉由作爲絕緣模之以玻璃、陶瓷等爲 主成分之絕緣性物質所構成的高電阻膜被覆。支持基板24 是在其第1表面24a經由吸氣膜、金屬背層17、螢光體螢 幕1 6，而與第1基板1 〇的內面形成面接觸的狀態下設置 。設置於支持基板24的電子束通過孔26係與螢光體螢幕 16的螢光體層R、G、B相對。藉此構成，各電子發射元 件1 8係經由電子束通過孔26，與相對應之螢光體層相對 • 〇 複數分隔件3 0係一體立設於支持基板24的第2表面 2 4b上，且分別位於排列於第2方向Y之電子束通過孔26 間。各分隔件3 0的延伸端係抵接於第2基板1 2的內面， 此處係抵接於設置於第2基板1 2之內面上的配線2 1上。 各分隔件3 0係形成從支持基板24側朝向延伸端，直徑逐 漸變小的前端細錐狀。例如，分隔件30係形成高度約 1 · 4mm。沿著與支持基板表面平行方向之分隔件30的剖面 係形成大約橢圓形。 -20- 200529270 (17) 支持基板24的各電子束通過孔26係形成矩形。除了 分隔件立設位置附近的電子束通過孔外，其他的電子束通 過孔26係分別形成第1方向X的尺寸爲〇.2mm、第2方 向的尺寸爲〇.2mm。在電子束通過孔中，分隔件立設位置 ‘ 附近的電子束通過孔26a係形成第1方向X的尺寸爲 0.2mm、第2方向的尺寸爲0.25mm，具有比其他電子束通 過孔26更大的面積。本實施形態中，位於分隔件各側之 | 三個電子束通過孔26a的面積係大於其他電子束通過孔的 面積而形成。此種面積較大之電子束通過孔26a的數量並 不侷限於三個，亦可根據需要，在分隔件的單側形成四個 以上。 以上述方式構成的分隔件構體22，藉由支持基板24 與第1基板1 0形成面接觸，且分隔件3 0的延伸端抵接於 第2基板1 2的內面，得以支持作用於此等基板的大氣壓 負載，而將基板間的間隔維持在預定値。 g 第3實施形態中，其他構成係與上述第1實施形態相 同，而在相同的部分添附相同的參考符號，以省略其詳細 說明。第3實施形態之S ED及其分隔件構體，可藉由與上 述實施形態之製造方法相同的製造方法來製造。第3實施 形態中’亦可獲得與上述第1實施形態相同的作用效果。 繼之’詳細說明關於本發明第4實施形態的S ED。 如第10圖至第12圖所示，SED具備：分別由矩形玻 璃板構成的第1基板1 0及第2基板1 2，而此等基板係保 持約1 · 〇至2 · 0 mm的間隙而相對配置。第1基板1 〇及第 -21 - 200529270 (18) 2基板1 2藉由玻璃所構成的矩形框狀側壁1 4，使周緣部 彼此相互接合’而構成內部維持真空的扁平矩形真空外圍 器1 5。 在第1基板10的內面，具顯示面功能的螢光體螢幕 1 6係形成於大致整面。螢光體螢幕1 6係將發出紅、藍、 綠之螢光體層R、G、B及遮光層丨丨排列而構成者，而這 些螢光體層係形成條紋狀或點狀。此外，在螢光體螢幕i 6 _ 上，依序形成有由鋁等構成的金屬背層17及吸氣膜19。 在第2基板1 2的內面，分別形成有用以發射電子束 的多數表面傳導型電子發射元件18，作爲激勵螢光體螢幕 16之螢光體層R、G、B的電子發射源。電子發射元件18 係與各畫素對應而配列成複數行及複數列。各電子發射元 件1 8係由未圖示之電子發射部、和在該電子發射部施加 電壓之一對元件電極等所構成。在第2基板12的內面上 ，將電位供給至電子發射元件1 8之多數條配線2 1係設成 φ 矩陣狀，且其端部係拉引至真空外圍器1 5的外部。 具有接合構件功能的側壁1 4，是藉由例如低熔點玻璃 、低熔點金屬等的密封材20，密封於第1基板1 0之周緣 部及第2基板1 2之周緣部，而將此等基板彼此接合。 如第11圖及第12圖所示，SED具有配設於第1基板 1〇及第2基板12之間的分隔件構體22。分隔件構體22 具備：由金屬板所構成的支持基板24 ;及一體立設於支持 基板上的多數柱狀分隔件30。支持基板24係形成與螢光 體螢幕16對應之尺寸的矩形，其具有：與第1基板10之 -22- 200529270 (19) 內面相對的第1表面24a ;及與第2基板12之內面相對的 第2表面24b，且與此等基板平行配置。 支持基板24係藉由例如鐵-鎳系金屬板，形成厚度 0 · 1至0 · 2 5 m m。在支持基板2 4上，藉由蝕刻等形成有複 數電子束通過孔26。電子束通過孔26係形成例如0.15至 0.25mmx0.15至0.25mm的矩形。如第13圖所示，將第1 基板10及第2基板12的長度方向設成X，寬度方向設成 Y時，電子束通過孔26係沿著X方向，以預定間距配列 ，而沿著Y方向，則以比X方向之間距大的間距配列。 形成於第1基板1〇之螢光體螢幕16的螢光體層R、G、B 及第2基板12上的電子發射元件18，在X方向及Y方向 ，係分別以相同於電子束通過孔26的間距配列，而分別 與電子束通過孔相對。 支持基板的第1及第2表面24a、24b、和各電子束通 過孔26的內壁面，係藉由以玻璃等爲主成分的絕緣性物 質，例如鋰系鹼性硼砂酸玻璃（alkali borosilicate glass )所構成之厚度約40 μπι的絕緣層37被覆。 支持基板24的第1表面24a，係藉由絕緣層37與第 1基板1 〇的吸氣膜1 9接觸而設置。設置於支持基板24的 電子束通過孔26,係與螢光體螢幕16的螢光體層R、G、 B及第2基板1 2上的電子發射元件1 8相對。以此構成， 各電子發射元件18經由電子通過孔26與對應之螢光體層 相對。 如第1 1圖至第12圖所示，多數分隔件3 0係一體立 -23- 200529270 (20) 設於支持基板24的第2表面24b上。各分隔件3〇的延伸 端係抵接於第2基板1 2的內面，此處係抵接於設置於第2 基板1 2之內面上的配線21上。各分隔件3 0係形成從支 持基板2 4側朝向延伸端，直徑逐漸變小的前端細錐狀。 例如，分隔件3 0的高度約形成1 · 8mm。沿著與支持基板 24表面平行方向之分隔件30的剖面係形成大約橢圓形。 各分隔件3 0主要是由以玻璃爲主成分之作爲絕緣物質的 g 分隔件形成材料所形成。 如第1 1圖至第13圖，支持基板24具有分別形成於 分隔件3 0之立設位置的複數高度緩和部54。各高度緩和 部54具有形成於支持基板24之第1表面24a側的凹部56 ’其相對於支持基板之其他部分的板厚，係形成1 / 2以 下的板厚。藉此構成，各高度緩和部54係形成可在大致 垂直於第1表面24a的方向，即沿著分隔件30的高度方 向彈性變形。各分隔件30在支持基板24的第2表面24b φ 上係立設於高度緩和部5 4，而與凹部5 6相對。 在支持基板24的第1表面24a上，除了與分隔件30 相對的凹部56外，還形成有複數凹部56。這些凹部56之 任一者均位在電子束通過孔26之間，形成於第1表面24a 〇 凹部56係形成在大氣壓作用時，具有可吸收分隔件 30的局度不齊且可變形之強度的深度。可考量各種在支持 基板24加工凹部56的方法，然而例如在支持基板24的 製作中使用触刻時，藉由將支持基板施以半蝕刻（haif •24· 200529270 (21) etching )，可容易地加工高部且可與電子束通過孔同時加 工。又，凹部56亦可藉由沖壓（press )加工等機械加工 形成。 本實施形態中，各凹部5 6係形成與分隔件3 0之支持 • 基板24側的端面，即抵接面大致相同的形狀。凹部5 6的 面積係大於分隔件3 0之抵接面的面積而形成。支持基板 50的表面，包含凹部56的內面，係由絕緣層37所被覆。 _ 理想的情況是，在真空外圍器1 5內事先將與凹部連 通的溝、孔等形成於支持基板24上，使凹部56不會成爲 完全的閉塞空間。 以上述方式構成之分隔件構體22藉由其支持基板24 與第1基板1 〇接觸，且分隔件3 0的延伸端抵接於第2基 板1 2的內面，得以支持作用於此等基板的大氣壓負載， 而將基板間的間隔維持在預定値。 SED具有：在支持基板24及第1基板1〇之金屬背層 φ 1 7，施加電壓的未圖示電壓供給部，例如可在支持基板施 力口 8kV的電壓，在金屬背層施加10kV的電壓。在SED中 顯示影像時，係驅動電子發射元件1 8，將電子束從任意的 電子發射元件射出，同時在在螢光螢幕16及金屬背層17 施加陽極電壓，從電子發射元件射出的電子束藉由陽極電 壓而加速，而朝螢光體螢幕撞擊。因此，螢光體螢幕16 的螢光體層被激勵而發光，而顯示影像。 繼之，說明以上述方式構成之SED的製造方法。首先 ，說明關於分隔件構體22的製造方法。 -25- 200529270 (22) 首先，將Fe — 50%Ni所構成之板厚〇.12mm的支持基 板加以脫脂·洗淨·乾燥後，在兩面形成抗蝕劑膜。接著 ，將金屬板的兩面加以曝光、顯影、乾燥，而形成抗蝕劑 圖案。藉由蝕刻，在金屬板的預定位置，形成0.1 8 X 0.18mm的電子束通過孔26。同時，將金屬板的第1表面 側，即與第1基板1 〇相對之表面的預定位置施以半蝕刻 ，而分別形成長軸直徑3mm、短軸直徑〇.4mm的凹部56 。然後，在支持基板24的整面，塗佈厚度40 μιη的玻璃熔 塊（glass frit )，加以乾燥後，藉由燒成，形成絕緣層37 〇 其後，準備與支持基板24具有大致相同矩形板狀的 成形模。成形模係由可透過紫外線的透明材料，例如以透 明聚對苯二甲酸乙二酯爲主體的透明矽等，形成平坦的板 狀。成形模具有：抵接於支持基板24的平坦抵接面；及 用以用以成形分隔件之多數有底的分隔件形成孔。分隔件 形成孔分別在成形模的抵接面形成開口，同時保持預定間 隔地配列。各分隔件形成孔係與分隔件相對應，而形成長 度1mm、寬度0.35mm、高度1.8mm。然後，在成形模的 分隔件形成孔，充塡分隔件形成材料。就分隔件形成材料 而言，係使用至少含有紫外線硬化型黏合劑（binder )( 有機成分）及玻璃塡料（glass filler)的玻璃糊（glass paste)。而玻璃糊的比重、黏度可適當選擇。 繼之，將成形模定位且令抵接面密接於支持基板24 的第2表面24b，使充塡有分隔件形成材料的分隔件形成 -26- 200529270 (23) 孔，位於電子束通過孔之間。以此構成，構成由支持基板 24及成形模所形成的組裝體。 使用例如紫外線燈管等，從支持基板2 4及成形模的 外面側，對所充塡的分隔件形成材料，照射紫外線（UV )’使分隔件形成材料UV硬化。此時，成形模係由作爲 紫外線透過材料的透明砂形成。所以，紫外線可直接及透 過成形模照射在分隔件形成材料。因此，可確實地使所充 φ 塡的分隔件形成材料硬化至其內部。 將成形模從支持基板24脫模，使硬化的分隔件形成 材料殘留於支持基板上。其後，將設有分隔件形成材料的 支持基板24在加熱爐內進行熱處理，待黏合劑自分隔件 形成材料內發散後，以約5 0 0至5 5 0 °C，約3 0分至1小時 ’將分隔件形成材料正式煅燒而形成玻璃化。以此方式， 可獲得分隔件30 —體製成於支持基板24之第2表面24b 上的分隔件構體22。 φ 另一方面，在SED的製造中，事先準備：設有螢光體 營幕16及金屬背層17的第1基板10;和設有電子發射元 件1 8及配線21，同時與側壁14接合的第2基板12。然 後’將以上述方式獲得的分隔件構體22定位配置於第2 基板1 2上後，將支持基板24的四角，熔接於立設於第2 基板之四個隅角部的金屬製支柱。以此方式，將分隔件構 體22固定於第2基板12。此外，支持基板24的固定部位 只要至少兩個即可。 然後，將第1基板1 〇、及固定有分隔件構體22的第 -27- 200529270 (24) 2基板12配置於真空室內，並將真空室內真空排氣後，在 第1基板的金屬背層1 7上形成吸氣膜1 9。繼而，經由側 壁14將第1基板與第2基板接合，同時將分隔件構體22 挾持於此等基板間。以此方式，可製造具備分隔件構體22 的 SED。 根據以上述方式構成的SED，藉由僅在支持基板24 的第2基板1 2側，設置分隔件3 0，可將各分隔件的長度 _ 變長，且可將支持基板24與第2基板12的距離拉開。因 此，支持基板與第2基板之間的耐壓性得以提升，且可抑 制此等基板之間所產生的放電。 支持基板24具有高度緩和部54，各分隔件3〇係設置 於該高度緩和部上。如第14圖所示，高度緩和部54可發 揮板彈簧或盤簧的作用，即使分隔件30的高度等產生不 齊時，亦可在分隔件的高度方向彈性變形，吸收高度的不 齊。因此，藉由分隔件3 0，可穩定地支持作用於第1基板 φ 10及第2基板12的大氣壓負載，且可提昇真空外圍器J5 的耐大氣壓強度。同時，可防止因高度的不齊而導致分隔 件損傷。 再者，即使分隔件30的高度不齊時，亦可防止分隔 件的前端與第1基板1 0之間產生間隙，且可抑制因該間 隙所生之放電。由於支持基板24係藉由絕緣層3 7被覆， 故支持基板本身亦具備得以抑制放電之屏蔽（shield )功 能。因此，可獲致得以抑制放電的產生，同時耐大氣壓強 度得以提升的SED。 -28- 200529270 (25) 支持基板24的第1表面24a係經由吸氣膜19抵接於 第1基板1 〇。因此，金屬背層1 7和支持基板24係相同電 位，又，形成在第1基板10和支持基板24之間挾持金屬 背層1 7及吸氣膜1 9的構成。此時，可防止金屬背層1 7 ^ 及吸氣膜1 9的剝離、與金屬背層及螢光面的損傷。因此 ，可長時間維持優良的影像品質。同時，可抑止因剝離的 金屬背層、吸氣膜所產生的放電，而獲致可靠性提升的 • SED。 在抵接於吸氣膜19之支持基板24的第1表面24a， 形成複數凹部5 6，而各凹部係經由未圖示的溝、孔，與真 空外圍器連通。所以，即使藉由支持基板24覆蓋吸氣膜 1 9時，亦可削減支持基板與吸氣膜1 9的接觸面積，增加 吸氣膜的露出面積。因此，可減緩吸氣效率的降低，而可 維持真空。 上述第4實施形態中，支持基板24之凹部5 6係形成 φ 與分隔件30之端面相似的形狀，然而只要具有大於該端 面的面積即可，其形狀則可依需要改變。如第1 5圖所示 ，凹部56亦可藉由將支持基板24之電子束通過孔26之 間的溝延伸而形成，而連續延伸於排列於長軸X方向的複 數高度緩和部54。凹部56的形成數亦可依需要增減。 繼之，詳細說明本發明第5實施形態的SED。 如第16圖至第18圖所示，SED具備：分別由矩形玻 璃板構成的第1基板1 0及第2基板12，且此等基板係保 持約1 . 〇至2 · 0mm的間隙而相對配置。第1基板1 0及第 -29 - 200529270 (26) 2基板1 2是經由玻璃所構成的矩形框狀側壁1 4，而接合 周緣部彼此，而構成內部維持真空的扁平矩形真空外圍器 15。將與第1基板10及第2基板12的長邊平行的方向設 成第1方向X，與短邊平行的方向設成第2方向Y時， * SED的有效顯示區域係形成第1方向X爲8 00mm、第2 方向Y爲500mm的矩形。 在第1基板10的內面形成有螢光體螢幕16。螢光體 p 螢幕16係將發出紅、藍、綠之螢光體層R、G、B (僅圖 示螢光體層G)及遮光層11排列而構成者，而這些螢光 體層係形成條紋狀、點狀或矩形。在螢光體螢幕1 6上， 依序形成有由鋁等構成的金屬背層1 7及吸氣膜1 9。 在第2基板12的內面，分別設有用以射出電子束之 多數表面傳導型電子發射元件18，作爲激勵螢光體螢幕 16之螢光體層R、G、B的電子發射源。這些電子發射元 件1 8係與各畫素對應而配列成複數行及複數列。各電子 φ 發射元件1 8係由未圖示之電子發射部、和在該電子發射 部施加電壓之一對元件電極等所構成。在第2基板1 2的 內面上，將電位供給至電子發射元件1 8之多數條配線21 係設成矩陣狀，且其端部係拉引至真空外圍器1 5的外部 。側壁1 4係藉由低熔點玻璃、低熔點金屬等密封材20 ’ 密封於第1基板1 〇之周緣部及第2基板12之周緣部，而 將此等基板彼此接合。 如第17圖及第19圖所示，SED具有配設於第1基板 1 〇及第2基板1 2之間的複數分隔件構體，例如具有四個 -30- 200529270 (27) 分隔件構體22a、22b、22c、22d。而各分隔件構體22a、 22b、22c、22d是由：由配設於第1及第2基板10、11之 間之矩形金屬板所構成的支持基板24 ;及一體立設於支持 基板的兩面之多數柱狀分隔件。四個分隔件構體22a、22b ^ 、22c、22d具有相同的構造，在第2方向Y保持間隙地 排列設置，而覆蓋顯示區域整體地配置。 以分隔件構體22b爲代表詳細說明時，支持基板24 g 係形成第1方向X的長度爲8 0 0mm、第2方向Y的長度 爲120mm的矩形。支持基板24具有：與第1基板10之 內面相對的第1表面24 a;及與第2基板12之內面相對的 第2表面24b，且與此等基板平行配置。在支持基板24上 ，藉由蝕刻等形成有多數電子束通過孔26。電子束通過孔 26係在第1方向X經由橋接部以第1間距排列，同時在 第2方向Y，以大於第1間距的第2間距排列。電子束通 過孔26分別與電子發射元件1 8相對地配列，得以透過從 φ 電子發射元件射出的電子束。 支持基板24是由例如鐵-鎳系金屬板，形成厚度0.1 至0.3 mm。在支持基板24的表面形成有：由構成金屬板 之元素所形成的氧化膜，例如Fe304、NiFe204所構成的 氧化膜。此外，支持基板24的表面24a、24b與各電子束 通過孔26的壁面，係藉由以例如玻璃、陶瓷等爲主成分 的絕緣層27被覆。再者，支持基板24的表面24a、24b、 周緣部與各電子束通過孔26的壁面，係由具有二次電子 發生防止效果之作爲高電阻膜的塗佈（coat)層28被覆。 -31 - 200529270 (28) 塗佈層28係與絕緣層27疊合而形成。 塗佈層28含有二次電子射出係數爲0.4至2.0的低係 數材料，例如氧化鉻。此種低二次電子射出係數的材料有 很多種，一般多存在於具有自由電子的良導體。然而，如 後所述，SED中，係在第1基板及第2基板間施加10kV 左右之較高的電壓，故必須選擇絕緣材料或半導體等較高 電阻的材料作爲塗佈層。氧化鉻的體積電阻値大約是 lOMcm的較高電阻，且也是低二次電子射出係數的材料 。並且，構成分隔件構體22的支持基板24中，表面電阻 以107ncm以上爲佳。在此，本實施形態中，藉由混合有 玻璃糊（glass paste)與氧化鉻之粉末的複合材料，形成 塗佈層28，而將支持基板24的表面電阻値微細地提升， 而獲致放電抑制效果。 如第1 7圖至第19圖所示，複數第1分隔件3 Oa係一 體立設於支持基板24的第1表面24a上，且分別位於排 列於第2方向Y之電子束通過孔26間。第1分隔件30a 的前端係經由吸氣膜19、金屬背層17及螢光體螢幕16的 遮光層11，抵接於第1基板1〇的內面。 複數第2分隔件30b係一體立設於支持基板24的第2 表面24b上，且分別位於排列於第2方向Y之電子束通過 孔26間。第2分隔件3 Ob的前端係抵接於第2基板1 2的 內面。此處，各第2分隔件3 Ob的前端係位於設置於第2 基板12內面上的配線21上。各第1及各第2分隔件30a 、3 0 b彼此整齊排列，而在將支持基板2 4從兩面挾持的狀 -32- 200529270 (29) 態與支持基板2 4 —體形成。 第1及第2分隔件30a、3 0b係分別形成從支持基板 24側朝向延伸端，直徑逐漸變小的前端細錐狀。例如，各 第1分隔件30a具有大致橢圓狀的橫剖面形狀，形成位於 ' 支持基板24側之基端的直徑約0.3mm X 2 mm、延伸端的直 徑約〇.2mmx2mm、高度約0.6mm。各第2分隔件30b具 有大致橢圓狀的橫剖面形狀，形成位於支持基板24側之 | 基端的直徑約 〇.3mm X 2mm、延伸端的直徑約 0.2mm x 2mm、高度約 〇.8mm。 以上述方式構成的四個分隔件構體22a、22b、22c、 2 2d，係形成各個支持基板24的長邊與第2基板12的第1 方向X平行延伸的狀態，且在第2方向保持間隙而配列。 四個支持基板24係彼此平行，且與第1基板1 0及第2基 板平行配設。各支持基板24的第1方向X端部，分別固 定於立設於第2基板內面的支持構件32。藉由各分隔件構 φ 體的第1及第2分隔件30a、30b抵接於第1基板10及第 2基板1 2的內面，得以支持作用於此等基板的大氣壓負載 ，而將基板間的間隔維持在預定値。 SED具有在支持基板24及第1基板10之金屬背層17 ，施加電壓的未圖示電壓供給部。該電壓供給部分別與支 持基板24及金屬背層1 7連接，例如在支持基板24施加 12kV的電壓，在金屬背層17施加10kV的電壓。在SED 中顯示影像時，係在螢光螢幕1 6及金屬背層1 7施加陽極 電壓，藉由陽極電壓使自電子發射元件18射出的電子束 -33- 200529270 (30) 螢 先 該 該 爲 加 〇 之 27 得 用 凝 的 透 成 抵 形 加速而朝螢光體螢幕16撞擊。因此，螢光體螢幕16的 光體層被激勵而發光，而顯示影像。 繼之，說明以上述方式構成之SED的製造方法。首 ，說明關於分隔件構體22的製造方法。 ^ 如第19圖所示，準備預定尺寸的支持基板24、與 支持基板具有大致相同尺寸之矩形板狀的上模及下模。 支持基板24是使用含有45至55重量％鎳、其餘部分 _ 鐵、不可免雜質之板厚0.12mm的金屬板。該將金屬板 以脫脂·洗淨·乾燥後，藉由蝕刻形成電子束通過孔26 將金屬板整體施以氧化處理後，在含電子束通過孔26 內面的支持基板表面，形成絕緣膜27。又，在絕緣膜 上，將玻璃糊中混入有約30重量％的氧化鉻（Cr203 — α α=— 0.5〜0.5)的塗佈液，以噴塗（spray)方式塗佈 加以乾燥後，藉由燒成，形成塗佈層28。以此方式，製 支持基板24。氧化鉻原料以粒徑0.1〜ΙΟμιη、純度98 φ 99.9%之材質爲佳。 此外，塗佈層28並不侷限於塗佈膜，亦可以是利 真空蒸鑛法、濺鍍法、離子噴鍍（i ο η ρ 1 a t i n g )法、或 膠（sol gel )法，在支持基板表面將氧化鉻形成薄膜狀 層。 作爲成形模的上模及下模，是藉由可透過紫外線的 明材料，例如透明矽、透明聚對苯二甲酸乙二酯等，形 平坦的板狀。上模具有：可抵接於支持基板24的平坦 接面；及用以成形第1分隔件3 0a之多數有底的分隔件 -34- 200529270 (31) 成孔。分隔件形成孔分別在上模的抵接面形成有開口，同 時保持預定間隔地配列。同樣地，下模具有：平坦的抵接 面；及用以成形第2分隔件3 Ob之多數有底的分隔件形成 孔。分隔件形成孔分別在下模的抵接面形成有開口，同時 ' 保持預定間隔地配列。 繼之，在上模的分隔件形成孔及下模的分隔件形成孔 ，充塡分隔件形成材料。就分隔件形成材料而言，是使用 _ 至少含有紫外線硬化型黏合劑（binder )(有機成分）及 玻璃塡料（glass filler)的玻璃糊（glass paste)。而玻 璃糊的比重、黏度可適當選擇。 將上模定位，且令抵接面密接於支持基板24的第1 表面24a，使充塡有分隔件形成材料的分隔件形成孔，分 別與電子束通過孔26之間相對。同樣地，以各分隔件形 成孔與電子束通過孔26之間相對的方式，定位下模3，而 使抵接面密接於支持基板24的第2表面24b。此外，亦可 φ 在支持基板24的分隔件立設位置，利用點膠機（ dispenser )或印刷，預先塗佈接著劑。因此，構成由支持 基板2 4、上模及下模所形成的組裝體。在組裝體中，上模 的分隔件形成孔與下模的分隔件形成孔，係夾著支持基板 24而相對配列。 繼之’藉由配置於上模及下模之外側的紫外線燈管， 朝上模及下模照射紫外線（UV )。上模及下模分別以紫 外線透過材料形成。因此，從紫外線燈管照射的紫外線， 會透過上模及下模，照射在所充塡的分隔件形成材料。以 -35- 200529270 (32) 此構成’可在維持組裝體密接的狀態下，令分隔件形成材 料紫外線硬化。 將上模及下模從支持基板24脫模，使硬化的分隔件 形成材料殘留於支持基板24上。其後，將設有分隔件形 成材料的支持基板在加熱爐內進行熱處理，待黏合劑自分 隔件形成材料內發散後，以約5 0 0至5 5 0 °C，約3 0分至1 小時，將分隔件形成材料正式煅燒。以此方式，可獲得支 持基板24上形成有第1及第2分隔件30a、30b的分隔件 構體。由同樣的構成，形成四個分隔件構體22a、22b、 22c 、 22d 〇 在SED的製造中，事先準備：設有螢光體螢幕16及 金屬背層17的第1基板10;與設有電子發射元件18及配 線21，同時接合側壁14的第2基板1 2。然後，將以上述 方式獲得的分隔件構體22a、22b、22c、22d定位配置於 第2基板1 2上，且固定於支持構件3 2。在該狀態下，將 第1基板1 〇、第2基板1 2及分隔件構體2 2配置於真空室 內，將真空室內真空排氣後，經由側壁14將第1基板與 第2基板接合。由上述方式，可製造具備分隔件構體22 a 、22b、22c、22d 的 SED。 根據以上述方式構成的SED，相對於顯示區域分割成 四部分，將分別形成800mmx 1 20mm之橫長帶狀的分隔件 構體22a、22b、22c、22d，配列設置於縱方向，即的2方 向Y。因此，可將各分隔件構體獨立地對準第1及第2基 板的位置，與使用覆蓋顯示裝置整體之單一分隔件構體的 -36- 200529270 (33) 情形相比較，可提升分隔件構體之位置對準的精確度。尤 其，本實施形態中，可將各分隔件構體中長度較短之第2 方向的位置對準精確度大幅提升。 同時，藉由將分隔件構體分割成複數，形成小型化， 可提升蝕刻加工、雷射加工等各分隔件本身的加工精確度 。再者，可利用既有的製造方法，廉價地製造各分隔件構 體。因此，將SED的畫素間距縮小而達成高精細化時，又 g ，將SED大型化時，均可以高精確度將分隔件構體的位置 對準電子發射元件等的位置等。因此，可獲得大型且高精 細化的SED。 上述SED中，各分隔件構體之支持基板24的表面及 周緣部，是藉由含有二次電子射出係數爲0.4〜2.0之材料 的塗佈層2 8被覆。所以，即使自電子發射元件1 8射出的 部分電子撞擊支持基板24的表面時，亦可大幅降低支持 基板表面之二次電子的發生。藉此構成，可抑制因二次電 φ 子射出所產生的放電，且可防止因放電而導致電子發射元 件、螢光面、第1基板上之配線的破壞或劣化。此外，可 防止因二次電子之分隔件的帶電，且可減少電子束相對於 螢光體層的軌道偏離情形，而可令顯示影像的色純度提升 。同時，可防止電子束被吸引至相鄰之支持基板24間的 間隙，且可防止因該間隙而產生的線顯示在畫面中。 此外，上述SED中，分隔件構體的分割數並不限定於 四個，可依需要增減。又，分隔件構體的分割方向並不限 定於第2方向Y，亦可爲分割於第1方向或第1及第2方 -37- 200529270 (34) 向之構成。 根據第2 0圖所示之第6實施形態的S E D ’設有分割 成5個的分隔件構體22a、22b、22c、22d、22e。各分隔 ' 件構體的支持基板24係在第2方向Y形成細長的帶狀’ • 例如形成第1方向X爲200mm，第2方向Υ爲500mm。 在支持基板24上形成有多數電子束通過孔26°複數第1 分隔件30a係一體立設於支持基板24的第1表面24a上 P ，複數第2分隔件30b係一體立設於支持基板24的第2 表面24b上。 五個構體22a、22b、22c、22d、22e，分別在支持基 板24的長邊與第2基板12的第2方向Y平行延伸的狀態 ，且於第1方向保持間隙而配列。五個支持基板24彼此 平行，且與第1基板10及第2基板平行配設。各支持基 板24之第2方向X兩端部，分別固定於立設於第2基板 1 2內面的支持構件3 2。藉由各分隔件構體的第1及第2 φ 分隔件30a、30b抵接於第1基板1〇及第2基板12的內 面’得以支持作用於此等基板的大氣壓負載，而將基板間 的間隔維持在預定値。 第6實施形態中，其他構成係與上述第5實施形態 相同’且在相同部分添附相同的參照符號，以省略其詳細 說明。而且，第6實施形態亦可獲致與上述第5實施形態 相同的作用效果。 根據第2 1圖所示之第7實施形態的s ED，顯示區域 係形成第1方向X爲12〇〇mm，第2方向¥爲75〇mm。而 -38 - 200529270 (35) 且，設有分割於第1方向及第2方向的四個分隔件構體 22a、22b、22c、22d。各分隔件構體的支持基板24係形 成與第2基板10大致相似的矩形，例如形成第1方向X 爲600mm，第2方向Y爲375 mm。在支持基板24上形成 * 有多數電子束通過孔26。複數第1分隔件30a係一體立設 於支持基板24的第1表面24a上，而複數第2分隔件30b 係一體立設於支持基板24的第2表面2 4b上。 | 四個分隔件構體22a、22b、22c、22d、22e，形成支 持基板24的長邊及短邊分別與第2基板12的第1方向X 及第方向Y平行延伸的狀態，且在第1方向及第2方向保 持間隙而配列成2列、2行。再者，四個支持基板24彼此 平行且與第1基板10及第2基板平行配設。各支持基板 24的角部中，與其他支持基板相對且位於第1基板1 2之 周緣部側的角部，係固定於立設於第2基板12內面的支 持構件3 2。亦即，各支持基板24之沒有置納於影像有效 φ 區域的兩個角部係固定於支持構件32。藉由各分隔件構體 的第1及第2分隔件30a、30b抵接於第1基板10及第2 基板1 2的內面，得以支持作用於此等基板的大氣壓負載 ’而將基板間的間隔維持在預定値。 第7實施形態中，其他構成係與上述第5實施形態相 同’且在相同部分添附相同的參照符號，以省略其詳細說 明。第7實施形態亦可獲致與上述第1實施形態相同的作 用效果。 此外’第5至第7實施形態中，複數分隔件構體不需 -39- 200529270 (36) 形成彼此相同的尺寸，亦可形成彼此相異的尺寸。 上述實施形態中，各分隔件構體係一體具備第1及第 2分隔件及支持基板的構成，然而亦可爲第2分隔件30b 形成於第2基板1 2上之構成。又，各分隔件構體亦可爲 ' 僅具備支持基板及第2分隔件，且支持基板與第1基板接 觸的構成。 如第22圖所示，根據本發明之第8實施形態的SED g ，設有例如分割成四部分的分隔件構體22a、22b、22c、 22d。各分隔件構體具有：由矩形金屬板所構成的支持基 板24 ;和僅一體立設於支持基板之一邊表面的多數柱狀分 隔件3 0。支持基板24具有與第1基板1 0之內面相對的第 1表面24 a、及與第2基板12之內面相對的第2表面24b ，且與此等基板平行配置。在支持基板24上，藉由蝕刻 等形成有多數電子束通過孔26。電子束通過孔26分別與 電子發射元件1 8相對而配列’得以透過從電子發射元件 φ 射出的電子束。 支持基板24之第1及第2表面24a、24b、和各電子 束通過孔2 6的內壁面，係藉由作爲絕緣層之例如以玻璃 、陶瓷等爲主成分的絕緣層27被覆’又，與絕緣層疊合 而形成有塗佈層28。支持基板24的第1表面24a係經由 吸氣膜19、金屬背層17、螢光體螢幕16,而在與第1基 板1 〇的內面形成面接觸的狀態下設置。設置於支持基板 24的電子束通過孔26係與螢光體螢幕16的螢光體層R、 G、B相對。以此構成’各電子發射元件1 8係經由電子束 -40- 200529270 (37) 通過孔26，與相對應之螢光體層相對。 複數分隔件3 0係一體立設於支持基板24的第2表面 24b上，且分別位於電子束通過孔26間。各分隔件30的 延伸端係抵接於第2基板1 2的內面，此處係抵接於設置 於第2基板12之內面上的配線2 1上。各分隔件3 〇係形 成從支持基板24側朝向延伸端，直徑逐漸變小的前端細 錐狀。例如，分隔件3 0係形成高度約1.4mm。沿著與支 持基板表面平行方向之分隔件3 0的剖面係形成大約橢圓 形。 以上述方式構成的四個分隔件構體22a、22b、22c、 22d係在例如第2方向Y保持間隙而配列，而覆蓋顯示區 域整體。各分隔件構體係藉由支持基板24與第1基板1 〇 形成面接觸，且分隔件30的延伸端抵接於第2基板12的 內面，而得以支持作用於此等基板的大氣壓負載，而將基 板間的間隔維持在預定値。 第8實施形態中，其他構成係與上述第1實施形態相 同，且在相同部分添附相同的參照符號，以省略其詳細說 明。第8實施形態之 SED及其分隔件構體係可利用與上 述實施形態之製造方法相同的製造方法製造。第8實施形 態亦可獲致與上述第1實施形態相同的作用效果。 繼之，說明關於本發明之第9實施形態。 如第23圖至25圖所示，根據本發明，SED設有例如 分割成四部分的分隔件構體22a、22b、22c、22d。各分隔 件構體具有：由矩形金屬板所構成的支持基板24 ;和僅一 -41 - 200529270 (38) 體立設於支持基板之一邊表面的多數柱狀分隔件3 0。支持 基板24具有與第1基板10之內面相對的第1表面24a及 與第2基板12之內面相對的第2表面24b，且與此等基板 平行配置。在支持基板24上，藉由蝕刻等形成有多數電 ' 子束通過孔26。電子束通過孔26分別與電子發射元件18 相對而配列，得以透過從電子發射元件射出的電子束。 各分隔件構體之支持基板24之第1及第2表面24a、 24b、和各電子束通過孔26的內壁面，係藉由作爲絕緣層 9 之例如以玻璃、陶瓷等爲主成分的絕緣層27被覆，又， 與絕緣層疊合而形成有塗佈層28。支持基板24的第1表 面24a是經由吸氣膜19、金屬背層17、螢光體螢幕16， 而在與第1基板1 〇的內面形成面接觸的狀態下設置。設 置於支持基板24的電子束通過孔26係與螢光體螢幕16 的螢光體層R、G、B相對。以此構成，各電子發射元件 1 8經由電子束通過孔26，與相對應之螢光體層相對。 φ 複數分隔件30係一體立設於支持基板24的第2表面 2 4b上，且分別位於電子束通過孔26間。各分隔件30的 延伸端係抵接於第2基板1 2的內面，此處係抵接於設置 於第2基板12之內面上的配線21上。各分隔件3 0係形 成從支持基板24側朝向延伸端，直徑逐漸變小的前端細 錐狀。例如，分隔件30係形成高度約1.4mm。沿著與支 持基板表面平行方向之分隔件3 0的剖面形成大約橢圓形 〇 如第25圖所示，形成於支持基板24的各電子束通過 -42- 200529270 (39) 孔2 6係形成矩形。除了分隔件立設位置附近的電子束通 過孔外，其他的電子束通過孔2 6分別形成第1方向X的 尺寸爲0.2mm、第2方向的尺寸L1爲0.2mm。在電子束 通過孔中，分隔件立設位置附近的電子束通過孔26a係形 * 成第1方向X的尺寸爲〇.2mm、第2方向的尺寸L2爲 0.25mm，具有比其他電子束通過孔26更大的面積。此外 ，分隔件立設位置附近的電子束通過孔26a係表示相對於 _ 第1及第2分隔件30a、30b的電子束通過孔，本實施形 態中，位於分隔件各側之三個電子束通過孔26a的面積係 大於其他電子束通過孔的面積而形成。此種面積較大之電 子束通過孔26a的數量並不侷限於三個，亦可依需要，在 分隔件的單側形成四個以上。 如第24圖及第25圖所示，各分隔件構體的支持基板 24具有：分別形成於分隔件3 0之立設位置的複數高度緩 和部54。各高度緩和部54具有形成於支持基板24之第1 φ 表面24a側的凹部5 6，其相對於支持基板其他部分的板厚 ’係形成1 / 2以下的板厚。藉此構成，各高度緩和部54 係形成可在大致垂直於第1表面24a的方向，即沿著分隔 件3 0的高度方向彈性變形。各分隔件3 〇在支持基板24 的第2表面24b上係立設於高度緩和部54，而與凹部56 相對。 凹部5 6係形成在大氣壓作用時，具有可吸收分隔件 3〇的高度不齊且可變形之強度的深度。可考慮各種在支持 基板24加工凹部56的方法，然而例如在支持基板24的 -43· 200529270 (40) 製作中，使用蝕刻時，藉由將支持基板施以半蝕刻 etching)，可容易且可與電子束通過孔同時加工凹 ，凹部56亦可藉由沖壓（press )加工等機械加工形 本實施形態中，各凹部5 6係形成與分隔件3 0 * 基板24側的端面，即抵接面相似的形狀。凹部56 係大於分隔件3 0之抵接面的面積而形成。支持基板 表面，包含凹部56的內面，乃由絕緣層37所被覆。 g 以上述方式構成的四個分隔件構體22a、22b、 22d係在例如第2方向Y保持間隙而配列，而覆蓋 域整體。各分隔件構體藉由支持基板24與第1基板 成面接觸，且分隔件3 0的延伸端抵接於第2基板1 面，而得以支持作用於此等基板的大氣壓負載，而 間的間隔維持在預定値。 第9實施形態中，其他構成係與上述第1、第 8實施形態相同，且在相同部分添附相同的參照符 0 省略其詳細說明。第9實施形態之 SED及其分隔 係可利用與上述實施形態之製造方法相同的製造方 造。第9實施形態亦可獲致與上述第1、第4及第 形態相同的作用效果。 此外，本發明並不限定於上述實施形態，實施 在不逸離其要旨的範圍內均可將構成要素變形而具 又’藉由上述實施形態所揭示之複數構成要素的適 ’可形成各種發明。例如，亦可從實施形態所示的 成要素，刪除幾個構成要素。再者，亦可將不同實 (half 部。又 成。 之支持 的面積 :50的 22c、 顯不區 :10形 2的內 將基板 4及第 號，以 件構體 法來製 5實施 階段中 體化。 當組合 所有構 施形態 -44 - 200529270 (41) 的構成要素加以適當組合。 分隔件的直徑或高度、其他構成要素的尺寸、材質等 並不限定於上述實施形態，亦可依需要加以適當選擇。分 隔件形成材料的充塡條件可依需要進行各種選擇。再者， ' 本發明並不限定於使用表面傳導型電子發射元件作爲電子 源，亦可適用於使用電場發射型、奈米碳管（Carbon Nano-Tube，CNT)等其他電子源的影像顯示裝置。 〔產業上利用之可能性〕 在形成於支持基板的複數電子束通過孔中，藉由使分 隔件立設位置附近之電子束通過孔的面積，大於其他電子 束通過孔的面積，可提供得以抑制因分隔件材料之滲入而 導致影像不良，且顯示品質得以提升的影像顯示裝置。再 者，可提供一種得以抑制放電的產生，同時耐大氣壓強度 得以提升的影像顯示裝置。 φ 藉由將分隔件構體分割成複數而形成小型化，可達成 各分隔件構體之定位精確度及加工精確度的提升，與製造 成本的降低。因此，可獲致大型且高精細的影像顯示裝置 【圖式簡單說明】 第1圖是表示本發明第1實施形態之SED的斜視圖。 第2圖是沿著第1圖的線Π 一 Π切斷之上述SED的 斜視圖。 -45- 200529270 (42) 第3圖是放大上述SED的剖面圖。 第4圖是表示放大上述SED之分隔件構體的一部分之 斜視圖。 第5圖是表示使用於上述分隔件構體的製造之支持基 板及成形模的剖面圖。 第6圖是表示使上述成形模及支持基板密接之組裝體 的剖面圖。 第7圖是表示打開上述成形模的狀態之剖面圖。 第8圖是表示本發明之第2實施形態之SED的分隔件 構體之斜視圖。 第9圖是表示本發明之第3實施形態的SED之剖面圖 〇 第10圖是表示本發明之第4實施形態的SED之剖面 圖。SED caused by poor material leakage and improved display quality. Furthermore, according to this embodiment, the electron beam passage holes 26a form a rectangular shape. By expanding the size in the second direction with a larger arrangement pitch, A larger area can be formed than other electron beam passing holes. At this time, it is not necessary to reduce the width of the bridge portion 27 between the electron beam passing holes arranged in the first direction X, and it is possible to prevent the strength of the supporting substrate 24 from being reduced. Next, the SED separator structure 22 according to the second embodiment of the present invention will be described. As shown in FIG. 8, in the plurality of electron beam passage holes 26 formed on the support substrate 24, near the stand-up position, the plurality of electron beam passage holes arranged in the first direction X are continuous and elongated rectangular openings. Hole 26a. In this embodiment, the elongated openings 26a are formed on both sides of the separator, and each of the openings 26a is formed by connecting, for example, four electron beams through the holes. Except for the electron beam passing holes near the standing position of the separator, the other electron beam passing holes 26 respectively form the first direction X with a size of φ 〇. 2mm, the dimension L1 in the second direction is 0. 2mm. In contrast, the size of the first direction X of each of the openings 26a is approximately 4 times that of the electron beam passing hole 26, and the size L2 of the second direction is 0. 25 mm, having a larger area than the other electron beam passing holes 26. Each of the openings 26a is not limited to four electron beam passing holes, and may be formed in two, three, or five or more consecutive sizes. In the second embodiment, the other components of the SED are the same as those of the first embodiment described above, and the same reference numerals are attached to the same portions to omit detailed descriptions thereof. 200529270 (15) According to the second embodiment, in the plurality of electron beam passage holes 26 formed on the support substrate 24, the electron beam passage holes 26 near the stand-up position are formed by the elongated openings that communicate the plurality of electron beam passage holes. The holes are formed to form a larger area than other electron beam passing holes. Therefore, when the separator structure is manufactured, even if the separator forming material penetrates into the electron beam passing hole 26a, the proportion of the area blocked by the separator forming material with respect to the entire area of the electron beam passing hole becomes small. Therefore, it is possible to prevent the electron beam passing through the electron p-beam passing hole 26a from coming into contact with the oozing separator-forming material. Normally, the material forming the infiltrating electron beam passing through the side of the hole will spread along the edge of the electron beam passing through the hole. Therefore, by increasing the area of the electron beam passing hole 26a and making the end edge of the hole longer, it is possible to reduce the amount of the spacer forming material spilling into the electron beam passing hole. As a result, it is possible to prevent the electron beam passing through the electron beam passing hole 26a from coming into contact with the oozing separator-forming material. With the above configuration, it is possible to provide an SED which can suppress image defects caused by the bleeding of the spacer forming material and improve display quality. φ In the above embodiment, the spacer structure 22 is integrally provided with the i-th and second spacers and the supporting substrate. However, the second spacer 30b may be formed on the second substrate 12. The spacer structure may include only the supporting substrate and the second spacer, and the supporting substrate may be in contact with the first substrate. As shown in FIG. 9, according to the SED according to the third embodiment of the present invention, the separator structure 22 includes a support substrate 24 made of a rectangular metal plate, and a plurality of columnar partitions that are integrally provided on only one side surface of the support substrate. Piece 3 0. The support substrate 24 has a first surface 24a opposite to the inner surface of the first substrate 10, and a second surface 24b opposite to the inner surface of the second substrate 12, and is arranged in parallel with the substrates of -19-200529270 (16). A plurality of electron beam passage holes 26 are formed in the support substrate 24 by etching or the like. The electron beam passing hole 26 is in a first direction X parallel to the length direction of the vacuum peripheral 15 and is arranged at a first pitch by the bridge portion 27. At the same time, the second direction Y orthogonal to the first direction is larger than the first direction X. The second pitch of the pitch is aligned. The electron beam passing holes 26 are arranged opposite to the electron emitting elements 18, respectively, so that the electron beams emitted from the electron emitting elements can be transmitted. p The first and second surfaces 24a, 24b of the supporting substrate, and the inner wall surfaces of the electron beam passage holes 26 are covered with a high-resistance film composed of an insulating material mainly composed of glass, ceramics, etc. as an insulating mold . The support substrate 24 is provided in a state where the first surface 24a is in surface contact with the inner surface of the first substrate 10 via the getter film, the metal back layer 17, and the phosphor screen 16. The electron beam passing holes 26 provided in the support substrate 24 are opposed to the phosphor layers R, G, and B of the phosphor screen 16. With this configuration, each of the electron emitting elements 18 is opposed to the corresponding phosphor layer through the electron beam passage hole 26. The plural spacers 30 are integrally provided on the second surface 24b of the support substrate 24, and The electron beam passing holes 26 arranged in the second direction Y are respectively located. The extended end of each spacer 30 is in contact with the inner surface of the second substrate 12, and in this case, it is in contact with the wiring 21 provided on the inner surface of the second substrate 12. Each of the spacers 30 is formed in a tapered shape from the support substrate 24 side toward the extended end, and gradually decreases in diameter. For example, the spacer 30 is formed to have a height of about 1.4 mm. The cross section of the spacer 30 along the direction parallel to the surface of the support substrate is formed into an approximately elliptical shape. -20- 200529270 (17) Each electron beam passing hole 26 of the supporting substrate 24 is formed into a rectangle. Except for the electron beam passing holes near the standing position of the separator, the other electron beam passing holes 26 are respectively formed in the first direction X with a size of 0. 2mm, the dimension in the second direction is 0. 2mm. In the electron beam passing hole, the spacer is erected at a position ‘near the electron beam passing hole 26 a to form the first direction X with a size of 0. 2mm, the dimension in the second direction is 0. 25 mm, having a larger area than the other electron beam passage holes 26. In this embodiment, the area of the three electron beam passage holes 26a located on each side of the separator is larger than the area of other electron beam passage holes. The number of such large-area electron beam passage holes 26a is not limited to three, and four or more may be formed on one side of the separator as required. The spacer structure 22 configured as described above is in surface contact with the first substrate 10 through the support substrate 24, and the extended end of the spacer 30 abuts against the inner surface of the second substrate 12 to support the effect. These substrates are loaded with atmospheric pressure, and the interval between the substrates is maintained at a predetermined value. g In the third embodiment, the other components are the same as those in the first embodiment, and the same reference numerals are added to the same portions to omit detailed descriptions. The S ED and the spacer structure of the third embodiment can be manufactured by the same manufacturing method as the manufacturing method of the above embodiment. In the third embodiment, the same effects as those of the first embodiment can be obtained. Next, the S ED according to the fourth embodiment of the present invention will be described in detail. As shown in FIGS. 10 to 12, the SED includes a first substrate 10 and a second substrate 12 each made of a rectangular glass plate, and these substrates maintain a gap of about 1.0 mm to 2.0 mm And relative configuration. First substrate 1 0 and -21-200529270 (18) 2 substrate 12 2 rectangular frame-shaped side walls 14 made of glass, the peripheral edges of each other are joined to each other to form a flat rectangular vacuum peripheral 1 that maintains an internal vacuum. 5. On the inner surface of the first substrate 10, a phosphor screen 16 having a display surface function is formed on substantially the entire surface. The phosphor screen 16 is formed by arranging red, blue, and green phosphor layers R, G, B, and a light-shielding layer, and these phosphor layers are formed into stripes or dots. In addition, on the phosphor screen i 6 _, a metal back layer 17 made of aluminum or the like and a getter film 19 are sequentially formed. On the inner surface of the second substrate 12, a plurality of surface-conduction electron emission elements 18 for emitting electron beams are formed as electron emission sources for exciting the phosphor layers R, G, and B of the phosphor screen 16, respectively. The electron emission elements 18 are arranged in a plurality of rows and a plurality of columns corresponding to each pixel. Each electron-emitting element 18 is composed of an electron-emitting portion (not shown), a pair of element electrodes, and the like by applying a voltage to the electron-emitting portion. On the inner surface of the second substrate 12, a plurality of wirings 21, which supply potentials to the electron emitting elements 18, are arranged in a φ matrix shape, and the ends thereof are drawn to the outside of the vacuum peripheral 15. The side wall 14 having the function of a bonding member is sealed to a peripheral portion of the first substrate 10 and a peripheral portion of the second substrate 12 with a sealing material 20 such as low-melting glass or low-melting metal, and the like. The substrates are bonded to each other. As shown in FIGS. 11 and 12, the SED includes a spacer structure 22 disposed between the first substrate 10 and the second substrate 12. The spacer structure 22 includes a support substrate 24 made of a metal plate, and a plurality of columnar spacers 30 integrally provided on the support substrate. The supporting substrate 24 is formed in a rectangular shape corresponding to the phosphor screen 16 and includes: a first surface 24a opposite to the inner surface of the first substrate 10-22-200529270 (19); and the second substrate 12 The second surface 24b facing each other is arranged parallel to the substrates. The support substrate 24 is formed of, for example, an iron-nickel metal plate to a thickness of 0 · 1 to 0 · 2 5 mm. A plurality of electron beam passage holes 26 are formed in the support substrate 24 by etching or the like. The electron beam passes through the hole 26 to form, for example, 0.1. 15 to 0. 25mmx0. 15 to 0. 25mm rectangle. As shown in FIG. 13, when the length direction of the first substrate 10 and the second substrate 12 is set to X and the width direction is set to Y, the electron beam passing holes 26 are arranged along the X direction at a predetermined pitch, and In the Y direction, they are aligned at a larger pitch than the distance between the X directions. The phosphor layers R, G, B of the phosphor screen 16 on the first substrate 10 and the electron emitting elements 18 on the second substrate 12 are respectively formed in the X direction and the Y direction with the same electron beam passing holes. The pitches of 26 are aligned and opposed to the electron beam passing holes. The first and second surfaces 24a, 24b of the supporting substrate and the inner wall surfaces of the electron beam passage holes 26 are made of insulating materials mainly composed of glass, such as lithium-based alkaline borosilicate glass. ) Is covered with an insulating layer 37 having a thickness of about 40 μm. The first surface 24a of the support substrate 24 is provided through the insulating layer 37 in contact with the getter film 19 of the first substrate 10. The electron beam passing holes 26 provided in the support substrate 24 are opposed to the phosphor layers R, G, and B of the phosphor screen 16 and the electron emission elements 18 on the second substrate 12. With this configuration, each of the electron emission elements 18 is opposed to the corresponding phosphor layer through the electron passage hole 26. As shown in FIGS. 11 to 12, most of the spacers 30 are integrally formed. -23- 200529270 (20) is provided on the second surface 24 b of the support substrate 24. The extended ends of the spacers 30 abut against the inner surface of the second substrate 12, and here, they abut against the wiring 21 provided on the inner surface of the second substrate 12. Each of the spacers 30 is formed in a tapered shape from the support substrate 24 side toward the extended end, and the diameter gradually decreases. For example, the height of the partition member 30 is approximately 1.8 mm. The cross section of the partition member 30 along a direction parallel to the surface of the support substrate 24 is formed into an approximately elliptical shape. Each of the spacers 30 is mainly formed of a g-separator-forming material having glass as a main component as an insulating substance. As shown in Figs. 11 to 13, the support substrate 24 includes a plurality of height-reducing portions 54 formed at the standing positions of the spacers 30, respectively. Each of the height-relief portions 54 has a recessed portion 56 'formed on the first surface 24a side of the support substrate 24, and has a plate thickness of 1/2 or less with respect to the plate thickness of the other portions of the support substrate. With this configuration, each of the height relaxation portions 54 is formed to be elastically deformable in a direction substantially perpendicular to the first surface 24a, that is, in a height direction of the partition 30. Each of the spacers 30 is erected on the second surface 24b φ of the support substrate 24 at the height relaxation portion 54 and is opposed to the concave portion 56. A plurality of recesses 56 are formed on the first surface 24 a of the support substrate 24 in addition to the recesses 56 facing the spacer 30. Any one of these recesses 56 is located between the electron beam passage holes 26 and is formed on the first surface 24a. The recesses 56 are formed under the action of atmospheric pressure, and have the strength to absorb the unevenness and deformability of the separator 30. depth. Various methods for processing the recessed portion 56 in the support substrate 24 can be considered. However, for example, when the touch-etching is used in the production of the support substrate 24, the support substrate can be subjected to half-etching (haif • 24 · 200529270 (21) etching), which can be easily performed. The upper part can be processed at the same time as the electron beam passing hole. The recessed portion 56 may be formed by a machining process such as a press process. In this embodiment, each recessed portion 56 is formed to have substantially the same shape as the end surface on the substrate 24 side, that is, the contact surface. The area of the concave portion 56 is larger than the area of the abutting surface of the separator 30. The surface of the support substrate 50, including the inner surface of the recessed portion 56, is covered with an insulating layer 37. _ Ideally, grooves, holes, etc. communicating with the recesses are formed in the vacuum peripheral 15 in advance on the support substrate 24 so that the recesses 56 do not become completely closed spaces. The spacer structure 22 configured as described above is in contact with the first substrate 10 through its supporting substrate 24, and the extended end of the spacer 30 is abutted against the inner surface of the second substrate 12 to support and act thereon. The atmospheric pressure of the substrates is loaded, and the interval between the substrates is maintained at a predetermined value. The SED includes a voltage supply unit (not shown) that applies a voltage to the metal back layer φ 17 of the support substrate 24 and the first substrate 10. For example, a voltage of 8 kV can be applied to the support substrate bias port, and a 10 kV Voltage. When displaying an image in SED, the electron emission element 18 is driven to emit an electron beam from an arbitrary electron emission element. At the same time, an anode voltage is applied to the fluorescent screen 16 and the metal back layer 17, and the electron beam emitted from the electron emission element It is accelerated by the anode voltage and strikes the phosphor screen. Therefore, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed. Next, the manufacturing method of the SED comprised as mentioned above is demonstrated. First, a method for manufacturing the spacer structure 22 will be described. -25- 200529270 (22) First, the thickness of Fe-50% Ni plate. After a 12 mm support substrate was degreased, washed, and dried, a resist film was formed on both sides. Next, both sides of the metal plate are exposed, developed, and dried to form a resist pattern. By etching, at a predetermined position on the metal plate, 0 is formed. 1 8 X 0. An 18 mm electron beam passes through the hole 26. At the same time, the first surface side of the metal plate, that is, a predetermined position on the surface opposite to the first substrate 10 was subjected to half-etching to form a major axis diameter of 3 mm and a minor axis diameter of 0.1. 4mm recess 56. Then, a glass frit having a thickness of 40 μm is applied to the entire surface of the support substrate 24, dried, and then fired to form an insulating layer 37. Thereafter, a substantially rectangular shape similar to that of the support substrate 24 is prepared. Plate-shaped forming die. The molding die is formed into a flat plate shape from a transparent material which can transmit ultraviolet rays, for example, transparent silicon mainly composed of transparent polyethylene terephthalate. The forming die has: a flat abutting surface abutting on the supporting substrate 24; and a bottomed spacer for forming a majority of the spacer to form a hole. The spacer-forming holes each form an opening in the abutting surface of the forming die, while maintaining a predetermined interval. Each partition forms a hole system corresponding to the partition, and forms a length of 1mm and a width of 0. 35mm, height 1. 8mm. Then, a hole is formed in the spacer of the forming die, and the spacer forming material is filled. As the material for forming the separator, a glass paste containing at least an ultraviolet-curable binder (organic component) and a glass filler is used. The specific gravity and viscosity of the glass paste can be appropriately selected. Next, the forming die is positioned and the abutting surface is in close contact with the second surface 24b of the support substrate 24, so that the spacer filled with the spacer forming material forms a -26-200529270 (23) hole, which is located in the electron beam passing hole. between. With this configuration, an assembly formed by the support substrate 24 and the molding die is configured. The filled spacer-forming material is irradiated with ultraviolet (UV) 'from the outer surface of the support substrate 24 and the molding die using, for example, an ultraviolet lamp and the like, and the spacer-forming material is UV-cured. At this time, the molding die is formed of transparent sand as an ultraviolet transmitting material. Therefore, ultraviolet rays can be irradiated onto the spacer-forming material directly and through the forming mold. Therefore, the filled spacer forming material φ 形成 can be surely hardened to the inside. The forming mold is released from the support substrate 24 so that the hardened spacer forming material remains on the support substrate. Thereafter, the support substrate 24 provided with the spacer-forming material is heat-treated in a heating furnace. After the adhesive is dispersed from the spacer-forming material, the temperature is about 500 to 5 50 ° C, about 30 minutes to 1 hour 'Formally calcined the separator-forming material to form vitrification. In this manner, the separator structure 22 integrally formed on the second surface 24 b of the support substrate 24 can be obtained. φ On the other hand, in the manufacture of SED, prepare in advance: a first substrate 10 provided with a phosphor screen 16 and a metal back layer 17; and an electron emitting element 18 and a wiring 21, and bonded to the side wall 14 at the same time The second substrate 12. Then, after the spacer structure 22 obtained as described above is positioned on the second substrate 12, the four corners of the support substrate 24 are welded to metal pillars standing at the four corners of the second substrate. In this way, the spacer structure 22 is fixed to the second substrate 12. In addition, at least two fixing portions of the support substrate 24 are sufficient. Then, the first substrate 10 and the -27-200529270 (24) 2 substrate 12 to which the spacer structure 22 is fixed are placed in a vacuum chamber, and the vacuum chamber is evacuated, and then the metal back of the first substrate is evacuated. A gettering film 19 is formed on the layer 17. Then, the first substrate and the second substrate are bonded to each other via the side wall 14, and the spacer structure 22 is held between these substrates. In this manner, an SED including the spacer structure 22 can be manufactured. According to the SED configured as described above, by providing the spacer 30 only on the second substrate 12 side of the support substrate 24, the length _ of each spacer can be increased, and the support substrate 24 and the second substrate can be made longer. 12 distances apart. Therefore, the withstand voltage between the support substrate and the second substrate is improved, and a discharge generated between these substrates can be suppressed. The support substrate 24 has a height-relief portion 54 on which each spacer 30 is provided. As shown in Fig. 14, the height alleviating portion 54 can function as a leaf spring or a coil spring. Even if the height of the partition member 30 is uneven, it can be elastically deformed in the height direction of the partition member to absorb the uneven height. Therefore, the spacer 30 can stably support the atmospheric pressure load acting on the first substrate φ 10 and the second substrate 12, and the atmospheric pressure resistance of the vacuum peripheral J5 can be improved. At the same time, damage to the separator due to uneven height can be prevented. Furthermore, even when the height of the spacer 30 is not uniform, a gap can be prevented from being generated between the front end of the spacer and the first substrate 10, and a discharge due to the gap can be suppressed. Since the support substrate 24 is covered by the insulating layer 37, the support substrate itself also has a shield function capable of suppressing discharge. Therefore, it is possible to obtain an SED which can suppress the occurrence of electric discharge and at the same time have an improved atmospheric pressure resistance. -28- 200529270 (25) The first surface 24a of the support substrate 24 is in contact with the first substrate 10 via the getter film 19. Therefore, the metal back layer 17 and the support substrate 24 are at the same potential, and a structure in which the metal back layer 17 and the getter film 19 are held between the first substrate 10 and the support substrate 24 is formed. In this case, peeling of the metal back layer 17 and the getter film 19 and damage to the metal back layer and the fluorescent surface can be prevented. Therefore, excellent image quality can be maintained for a long time. At the same time, it can suppress the discharge caused by the peeled metal back layer and the getter film, which can improve the reliability of SED. A plurality of recessed portions 56 are formed on the first surface 24a of the support substrate 24 that is in contact with the gettering film 19, and each recessed portion communicates with the vacuum peripheral device through grooves and holes (not shown). Therefore, even when the getter film 19 is covered with the support substrate 24, the contact area between the support substrate and the getter film 19 can be reduced, and the exposed area of the getter film can be increased. Therefore, the decrease in the suction efficiency can be reduced, and the vacuum can be maintained. In the fourth embodiment described above, the recessed portion 56 of the support substrate 24 has a shape φ similar to that of the end surface of the spacer 30. However, as long as it has an area larger than the end surface, its shape can be changed as needed. As shown in FIG. 15, the recessed portion 56 may also be formed by extending a groove between the electron beams of the support substrate 24 through the hole 26, and continuously extend to the plurality of height-relief portions 54 arranged in the long axis X direction. The number of the recesses 56 may be increased or decreased as necessary. Next, the SED of the fifth embodiment of the present invention will be described in detail. As shown in Figs. 16 to 18, the SED includes a first substrate 10 and a second substrate 12 each composed of a rectangular glass plate, and these substrates are maintained at approximately 1. Relatively arranged with a gap of 0 to 2.0 mm. The first substrate 10 and the -29-200529270 (26) 2 The substrate 12 is a flat rectangular vacuum peripheral 15 that is connected to the peripheral edge portions via a rectangular frame-shaped side wall 14 made of glass to maintain a vacuum inside. When the direction parallel to the long sides of the first substrate 10 and the second substrate 12 is set to the first direction X, and the direction parallel to the short sides is set to the second direction Y, the effective display area of the SED forms the first direction X. It is a rectangle of 800 mm and the second direction Y is 500 mm. A phosphor screen 16 is formed on the inner surface of the first substrate 10. The phosphor p screen 16 is formed by arranging red, blue, and green phosphor layers R, G, and B (only the phosphor layer G is shown) and the light-shielding layer 11, and these phosphor layers form a stripe shape. , Dotted or rectangular. On the phosphor screen 16, a metal back layer 17 made of aluminum or the like and an getter film 19 are sequentially formed. On the inner surface of the second substrate 12, a plurality of surface-conduction electron emission elements 18 for emitting an electron beam are provided as electron emission sources for exciting the phosphor layers R, G, and B of the phosphor screen 16, respectively. These electron emitting elements 18 are arranged in plural rows and plural columns corresponding to each pixel. Each electron φ emitting element 18 is composed of an electron emitting portion (not shown), a pair of element electrodes, etc., to which one of the voltages is applied to the electron emitting portion. On the inner surface of the second substrate 12, a plurality of wirings 21 that supply potentials to the electron emitting elements 18 are arranged in a matrix, and the ends thereof are drawn to the outside of the vacuum peripheral 15. The side walls 14 are sealed to a peripheral portion of the first substrate 10 and a peripheral portion of the second substrate 12 by a sealing material 20 'such as low-melting glass or low-melting metal, and the substrates are bonded to each other. As shown in FIG. 17 and FIG. 19, the SED has a plurality of spacer structures arranged between the first substrate 10 and the second substrate 12, for example, four -30-200529270 (27) spacer structures The bodies 22a, 22b, 22c, 22d. And each partition structure 22a, 22b, 22c, 22d is composed of: a support substrate 24 composed of a rectangular metal plate arranged between the first and second substrates 10, 11; Most columnar dividers on both sides. The four spacer structures 22a, 22b, 22c, and 22d have the same structure, and are arranged in the second direction Y with a gap, and are arranged so as to cover the entire display area. In the detailed description using the spacer structure 22b as a representative, the support substrate 24 g is formed into a rectangle having a length of 800 mm in the first direction X and a length of 120 mm in the second direction Y. The support substrate 24 has a first surface 24a opposite to the inner surface of the first substrate 10, and a second surface 24b opposite to the inner surface of the second substrate 12, and is arranged in parallel with these substrates. A plurality of electron beam passage holes 26 are formed in the support substrate 24 by etching or the like. The electron beam passing holes 26 are arranged at a first pitch in the first direction X via the bridging portion, and at the same time in the second direction Y at a second pitch larger than the first pitch. The electron beam passing holes 26 are arranged opposite to the electron emitting elements 18, respectively, and can pass the electron beams emitted from the? Electron emitting element. The support substrate 24 is made of, for example, an iron-nickel-based metal plate and has a thickness of 0. 1 to 0. 3 mm. On the surface of the support substrate 24, an oxide film made of elements constituting a metal plate, such as an oxide film made of Fe304 or NiFe204, is formed. The surfaces 24a, 24b of the support substrate 24 and the wall surfaces of the electron beam passage holes 26 are covered with an insulating layer 27 composed mainly of glass, ceramics, or the like. In addition, the surfaces 24a, 24b, peripheral portions of the support substrate 24, and the wall surfaces of the electron beam passage holes 26 are covered with a coating layer 28 as a high-resistance film having a secondary electron generation prevention effect. -31-200529270 (28) The coating layer 28 is formed by overlapping the insulating layer 27. The coating layer 28 contains a secondary electron emission coefficient of 0. 4 to 2. Low-coefficient materials such as chromium oxide. There are many kinds of such materials with low secondary electron emission coefficients, and they generally exist in good conductors with free electrons. However, as described later, in the SED, a high voltage of about 10 kV is applied between the first substrate and the second substrate. Therefore, it is necessary to select a high-resistance material such as an insulating material or a semiconductor as the coating layer. The volume resistance of chromium oxide 値 is a relatively high resistance of about 1OMcm, and it is also a material with a low secondary electron emission coefficient. The support substrate 24 constituting the separator structure 22 preferably has a surface resistance of 107 ncm or more. Here, in this embodiment, a composite material mixed with a glass paste and a powder of chromium oxide is used to form the coating layer 28, and the surface resistance 値 of the support substrate 24 is finely increased, thereby suppressing discharge. effect. As shown in FIGS. 17 to 19, the plurality of first spacers 3 Oa are integrally erected on the first surface 24 a of the support substrate 24 and are respectively located between the electron beam passing holes 26 arranged in the second direction Y. . The front end of the first spacer 30a is in contact with the inner surface of the first substrate 10 via the getter film 19, the metal back layer 17, and the light shielding layer 11 of the phosphor screen 16. The plurality of second spacers 30b are integrally erected on the second surface 24b of the support substrate 24, and are respectively located between the electron beam passing holes 26 arranged in the second direction Y. The tip of the second spacer 3 Ob is in contact with the inner surface of the second substrate 12. Here, the tip of each second spacer 3 Ob is located on the wiring 21 provided on the inner surface of the second substrate 12. Each of the first and second spacers 30a, 30b is aligned with each other, and is formed in a state where the support substrate 24 is held from both sides by the -32-200529270 (29) state and the support substrate 24 is formed as a single body. The first and second spacers 30a and 30b are each formed in a tapered shape with a diameter gradually decreasing from the support substrate 24 side toward the extended end. For example, each of the first spacers 30a has a substantially elliptical cross-sectional shape, and is formed at a base end on the side of the support substrate 24 with a diameter of about 0. 3mm X 2 mm, the diameter of the extension end is about 0. 2mmx2mm, height about 0. 6mm. Each of the second spacers 30b has a substantially elliptical cross-sectional shape, and the diameter of the base end on the support substrate 24 side is about 0.1. 3mm X 2mm, the diameter of the extension is about 0. 2mm x 2mm, height about 〇. 8mm. The four spacer structures 22a, 22b, 22c, and 2d configured as described above are formed in a state where the long sides of the respective support substrates 24 extend parallel to the first direction X of the second substrate 12, and are held in the second direction. Gaps. The four supporting substrates 24 are parallel to each other, and are arranged in parallel with the first substrate 10 and the second substrate. The first direction X end portion of each support substrate 24 is fixed to a support member 32 standing on the inner surface of the second substrate, respectively. The first and second spacers 30a, 30b of each spacer structure φ body abut against the inner surfaces of the first substrate 10 and the second substrate 12 to support the atmospheric pressure load acting on these substrates, and the substrate The interval is maintained at a predetermined interval. The SED includes a voltage supply unit (not shown) that applies a voltage to the metal back layer 17 of the support substrate 24 and the first substrate 10. This voltage supply unit is connected to the support substrate 24 and the metal back layer 17, respectively. For example, a voltage of 12 kV is applied to the support substrate 24, and a voltage of 10 kV is applied to the metal back layer 17. When displaying an image in SED, an anode voltage is applied to the fluorescent screen 16 and the metal back layer 17 to make the electron beam emitted from the electron-emitting element 18 by the anode voltage-33- 200529270 (30) Plus 27, it must be accelerated toward the phosphor screen 16 with a condensate. Therefore, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed. Next, the manufacturing method of the SED comprised as mentioned above is demonstrated. First, a method for manufacturing the spacer structure 22 will be described. ^ As shown in FIG. 19, a support substrate 24 of a predetermined size, a rectangular plate-shaped upper mold and a lower mold having approximately the same size as the support substrate are prepared. The support substrate 24 is made of a plate having a thickness of 0 to 55% by weight of nickel, the rest _ iron, and inevitable impurities. 12mm metal plate. After the metal plate is degreased, washed, and dried, an electron beam passage hole 26 is formed by etching. The entire metal plate is subjected to oxidation treatment, and then an insulating film 27 is formed on the surface of the support substrate including the inner surface of the electron beam passage hole 26. . Also, about 30% by weight of chromium oxide (Cr203 — α α = — 0.) was mixed into the glass paste on the insulating film. 5 ~ 0. 5) The coating liquid is spray-coated and dried, and then fired to form a coating layer 28. In this manner, the supporting substrate 24 is manufactured. The chromium oxide raw material has a particle size of 0. 1 ~ 10μιη, purity 98 φ 99. 9% is better. In addition, the coating layer 28 is not limited to a coating film, and may be a vacuum evaporation method, a sputtering method, an ion spraying method (i ο η ρ 1 ating) method, or a sol gel method. The substrate surface will form chromium oxide into a thin film layer. The upper and lower dies used as the forming dies are flat plate-like shapes made of transparent materials that can transmit ultraviolet rays, such as transparent silicon and transparent polyethylene terephthalate. The upper mold has: a flat contact surface that can abut against the support substrate 24; and most bottomed spacers for forming the first spacer 30a -34- 200529270 (31) hole formation. Separator-forming holes are formed with openings in the contact surfaces of the upper mold, respectively, and are arranged at predetermined intervals. Similarly, the lower mold has: a flat abutting surface; and a bottomed partition forming hole for forming the second partition 3 Ob. Separator-forming holes are formed with openings in the abutting surfaces of the lower mold, respectively, and are arranged at predetermined intervals. Next, a hole is formed in the spacer of the upper mold and a hole is formed in the spacer of the lower mold, and the material for forming the spacer is filled. As the material for forming the separator, a glass paste containing at least an ultraviolet-curable binder (organic component) and a glass filler is used. The specific gravity and viscosity of the glass paste can be appropriately selected. The upper mold is positioned so that the abutting surface is in close contact with the first surface 24a of the support substrate 24, so that the spacers filled with the spacer-forming material form holes, which are opposed to the electron beam passage holes 26, respectively. Similarly, the lower mold 3 is positioned so that the holes formed by the spacers and the electron beam passing holes 26 face each other so that the abutting surface is in close contact with the second surface 24b of the support substrate 24. In addition, it is also possible to apply an adhesive in advance at a stand-up position of the supporter 24 by using a dispenser or printing. Therefore, an assembly formed by the supporting substrate 24, the upper mold, and the lower mold is configured. In the assembly, the spacer forming holes of the upper mold and the spacer forming holes of the lower mold are arranged opposite to each other with the support substrate 24 interposed therebetween. Subsequently, ultraviolet rays (UV) are radiated toward the upper mold and the lower mold by the ultraviolet lamp tubes arranged outside the upper mold and the lower mold. The upper mold and the lower mold are formed of ultraviolet transmitting materials, respectively. Therefore, the ultraviolet rays irradiated from the ultraviolet lamp tube pass through the upper mold and the lower mold, and irradiate the filled spacer forming material. With the structure of -35- 200529270 (32), the spacer forming material can be hardened by ultraviolet rays while maintaining the tightness of the assembly. The upper mold and the lower mold are released from the support substrate 24 so that the hardened spacer forming material remains on the support substrate 24. After that, the supporting substrate provided with the spacer forming material is heat-treated in a heating furnace. After the adhesive is dispersed from the spacer forming material, the temperature is about 500 to 5 50 ° C, about 30 minutes to 1 After hours, the separator-forming material was formally calcined. In this way, a spacer structure in which the first and second spacers 30a, 30b are formed on the support substrate 24 can be obtained. With the same structure, four spacer structures 22a, 22b, 22c, and 22d are formed. In the production of SED, the following is prepared in advance: a first substrate 10 provided with a phosphor screen 16 and a metal back layer 17; and The electron emission element 18 and the wiring 21 are simultaneously bonded to the second substrate 12 of the side wall 14. Then, the separator structures 22a, 22b, 22c, and 22d obtained as described above are positioned on the second substrate 12 and fixed to the support member 32. In this state, the first substrate 10, the second substrate 12 and the spacer structure 22 are arranged in a vacuum chamber, and after the vacuum chamber is evacuated, the first substrate and the second substrate are bonded via the side wall 14. In the manner described above, an SED including the separator structures 22 a, 22 b, 22 c, and 22 d can be manufactured. According to the SED structured as described above, the display area is divided into four parts, and the spacer structures 22a, 22b, 22c, and 22d forming a horizontally long strip shape of 800 mm x 1 20 mm are arranged in the vertical direction, that is, 2 Direction Y. Therefore, each spacer structure can be independently aligned with the positions of the first and second substrates, and the spacer can be improved compared to the case of -36- 200529270 (33) where a single spacer structure covering the entire display device is used. Accuracy of structuring position alignment. In particular, in this embodiment, the positional alignment accuracy in the second direction with a shorter length in each of the separator structures can be greatly improved. At the same time, by dividing the separator structure into a plurality of pieces to form a miniaturization, the processing accuracy of each separator such as etching processing and laser processing can be improved. Furthermore, each of the separator structures can be manufactured at low cost by using an existing manufacturing method. Therefore, when the pixel pitch of the SED is reduced to achieve high definition, and when the SED is enlarged, the position of the spacer structure can be aligned with the position of the electron emission element or the like with high accuracy. Therefore, a large and highly refined SED can be obtained. In the above-mentioned SED, the surface and the peripheral portion of the support substrate 24 of each of the separator structures are formed by containing a secondary electron emission coefficient of 0. 4 ~ 2. A coating layer 2 of a material of 0 is coated. Therefore, even when part of the electrons emitted from the electron emitting element 18 hits the surface of the support substrate 24, the generation of secondary electrons on the surface of the support substrate can be significantly reduced. With this structure, it is possible to suppress the discharge caused by the secondary electron φ emission, and to prevent the electron emission element, the fluorescent surface, and the wiring on the first substrate from being damaged or deteriorated due to the discharge. In addition, it is possible to prevent the charging of the separator due to the secondary electrons, and to reduce the deviation of the orbit of the electron beam relative to the phosphor layer, thereby improving the color purity of the displayed image. At the same time, it is possible to prevent the electron beam from being attracted to the gap between the adjacent supporting substrates 24, and it is possible to prevent lines generated due to the gap from being displayed on the screen. In addition, in the above SED, the number of divisions of the separator structure is not limited to four, and may be increased or decreased as necessary. In addition, the division direction of the separator structure is not limited to the second direction Y, and may be a structure divided in the first direction or the first and second directions. According to S E D 'of the sixth embodiment shown in Fig. 20, there are provided spacer structures 22a, 22b, 22c, 22d, and 22e divided into five. The support substrate 24 of each partitioned structure is formed in an elongated strip shape in the second direction Y '. For example, the first direction X is 200 mm, and the second direction Υ is 500 mm. A plurality of electron beam passing holes 26 ° are formed in the support substrate 24. A plurality of first spacers 30a are integrally erected on the first surface 24a of the support substrate 24, and a plurality of second spacers 30b are integrally erected on the support substrate 24. On the second surface 24b. The five structures 22a, 22b, 22c, 22d, and 22e are respectively aligned in a state where the long sides of the support substrate 24 extend parallel to the second direction Y of the second substrate 12 while maintaining a gap in the first direction. The five supporting substrates 24 are arranged in parallel with each other, and are arranged in parallel with the first substrate 10 and the second substrate. Both ends of each support base plate 24 in the second direction X are fixed to support members 32, which are erected on the inner surface of the second base plate 12, respectively. The first and second φ spacers 30a, 30b of each spacer structure abut on the inner surfaces of the first substrate 10 and the second substrate 12 to support the atmospheric pressure load acting on these substrates, and the substrate The interval is maintained at a predetermined interval. In the sixth embodiment, the other components are the same as those of the fifth embodiment described above, and the same reference numerals are attached to the same portions to omit detailed descriptions thereof. In addition, the sixth embodiment can obtain the same effects as the fifth embodiment. According to the s ED of the seventh embodiment shown in Fig. 21, the display area is formed in a first direction X of 1200 mm and a second direction of 7500 mm. And -38-200529270 (35) Furthermore, four partition structures 22a, 22b, 22c, and 22d divided in the first direction and the second direction are provided. The support substrate 24 of each spacer structure is formed into a rectangle substantially similar to the second substrate 10, and is formed, for example, in a first direction X of 600 mm and a second direction Y of 375 mm. A plurality of electron beam passing holes 26 are formed in the support substrate 24. The plurality of first spacers 30a are integrally erected on the first surface 24a of the support substrate 24, and the plurality of second spacers 30b are integrally erected on the second surface 24b of the support substrate 24. The four spacer structures 22a, 22b, 22c, 22d, and 22e form a state in which the long and short sides of the support substrate 24 extend parallel to the first direction X and the direction Y of the second substrate 12, respectively, and The first direction and the second direction are arranged in two rows and two rows with a gap. The four supporting substrates 24 are arranged in parallel with each other and in parallel with the first substrate 10 and the second substrate. Of the corners of each support substrate 24, the corners facing the other support substrates and located on the peripheral edge side of the first substrate 12 are fixed to the support member 32 standing on the inner surface of the second substrate 12. That is, the two corner portions of each support substrate 24 that are not housed in the image effective φ region are fixed to the support member 32. The first and second spacers 30a and 30b of each spacer structure are in contact with the inner surfaces of the first substrate 10 and the second substrate 12 to support the atmospheric pressure load acting on these substrates, and the substrates can be spaced between substrates. The interval is maintained at a predetermined interval. In the seventh embodiment, the other components are the same as those of the fifth embodiment described above, and the same reference numerals are attached to the same portions to omit detailed descriptions. The seventh embodiment can also obtain the same effects as the first embodiment. In addition, in the 5th to 7th embodiments, it is not necessary for the plural spacer structures to be formed in the same size as each other, and it is also possible to form different sizes. In the embodiment described above, each of the partition structure systems includes the first and second partitions and the supporting substrate as a whole. However, the second partition 30b may be formed on the second substrate 12. In addition, each of the separator structures may have a configuration including only the support substrate and the second separator, and the support substrate being in contact with the first substrate. As shown in FIG. 22, the SED g according to the eighth embodiment of the present invention is provided with, for example, separator structures 22a, 22b, 22c, and 22d divided into four parts. Each of the spacer structures includes a support base plate 24 made of a rectangular metal plate, and a plurality of columnar spacers 30 which are integrally erected on only one side surface of the support substrate. The support substrate 24 has a first surface 24 a opposed to the inner surface of the first substrate 10 and a second surface 24 b opposed to the inner surface of the second substrate 12, and is arranged in parallel with these substrates. A plurality of electron beam passage holes 26 are formed in the support substrate 24 by etching or the like. The electron beam passing holes 26 are arranged so as to be opposed to the electron emitting elements 18, respectively, so that the electron beams emitted from the electron emitting elements φ can be transmitted. The first and second surfaces 24a, 24b of the support substrate 24 and the inner wall surfaces of the electron beam passage holes 26 are covered with an insulating layer 27, which is mainly composed of glass, ceramics, or the like as an insulating layer. The insulating layer is laminated to form a coating layer 28. The first surface 24a of the supporting substrate 24 is provided in a state of being in surface contact with the inner surface of the first substrate 10 through the getter film 19, the metal back layer 17, and the phosphor screen 16. The electron beam passing holes 26 provided in the support substrate 24 are opposed to the phosphor layers R, G, and B of the phosphor screen 16. With this configuration, each of the electron-emitting elements 18 passes through the hole 26 through the electron beam -40-200529270 (37) and opposes the corresponding phosphor layer. The plurality of spacers 30 are integrally provided on the second surface 24b of the support substrate 24, and are respectively located between the electron beam passing holes 26. The extended ends of the spacers 30 abut against the inner surface of the second substrate 12, and here, they abut against the wirings 21 provided on the inner surface of the second substrate 12. Each of the spacers 30 is formed in a tapered shape from the support substrate 24 side toward the extended end, and the diameter gradually decreases. For example, the separator 3 0 is formed to a height of about 1. 4mm. The cross section of the partition member 30 along a direction parallel to the surface of the supporting substrate is formed into an approximately elliptical shape. The four spacer structures 22a, 22b, 22c, and 22d configured as described above are arranged in a gap in the second direction Y, for example, and cover the entire display area. Each of the partition member systems is in surface contact with the first substrate 10 by the support substrate 24, and the extended end of the partition member 30 abuts against the inner surface of the second substrate 12, thereby supporting the atmospheric pressure load acting on these substrates. The interval between the substrates is maintained at a predetermined interval. In the eighth embodiment, the other components are the same as those of the first embodiment described above, and the same reference numerals are attached to the same portions to omit detailed descriptions. The SED and the partition structure of the eighth embodiment can be manufactured by the same manufacturing method as the manufacturing method of the above embodiment. In the eighth embodiment, the same effects as those in the first embodiment can be obtained. Next, a ninth embodiment of the present invention will be described. As shown in Figs. 23 to 25, according to the present invention, the SED is provided with, for example, partition structures 22a, 22b, 22c, and 22d divided into four parts. Each of the spacer structures includes a support substrate 24 made of a rectangular metal plate, and a plurality of columnar spacers 30, which are erected on one side surface of the support substrate. The support substrate 24 has a first surface 24a opposed to the inner surface of the first substrate 10 and a second surface 24b opposed to the inner surface of the second substrate 12, and is arranged in parallel with these substrates. A plurality of electron beam passing holes 26 are formed in the support substrate 24 by etching or the like. The electron beam passing holes 26 are arranged opposite to the electron emitting elements 18, respectively, and can pass through the electron beams emitted from the electron emitting elements. The first and second surfaces 24a, 24b of the support substrate 24 of each spacer structure, and the inner wall surfaces of the electron beam passage holes 26 are insulated by, for example, glass, ceramics or the like as the main component of the insulating layer 9 The layer 27 is covered and laminated with insulation to form a coating layer 28. The first surface 24a of the support substrate 24 is provided in a state of being in surface contact with the inner surface of the first substrate 10 through the getter film 19, the metal back layer 17, and the phosphor screen 16. The electron beam passing holes 26 provided in the support substrate 24 are opposed to the phosphor layers R, G, and B of the phosphor screen 16. With this configuration, each of the electron emitting elements 18 is opposed to the corresponding phosphor layer through the electron beam passing hole 26. The plural φ spacers 30 are integrally provided on the second surface 24b of the support substrate 24, and are respectively located between the electron beam passing holes 26. The extension ends of the spacers 30 are in contact with the inner surface of the second substrate 12, and in this case, they are in contact with the wiring 21 provided on the inner surface of the second substrate 12. Each of the spacers 30 is formed in a tapered shape from the support substrate 24 side toward the extension end, and the diameter gradually decreases. For example, the spacer 30 is formed to a height of about 1. 4mm. An approximately elliptical shape is formed along the cross section of the partition member 30 parallel to the surface of the support substrate. As shown in FIG. 25, each electron beam formed in the support substrate 24 passes through -42-200529270 (39). . Except for the electron beam passing holes near the standing position of the separator, the other electron beam passing holes 2 6 are formed in the first direction X and have a size of 0. 2mm, the dimension L1 in the second direction is 0. 2mm. In the electron beam passing hole, the electron beam passing hole 26a near the standing position of the separator is formed in the first direction X to have a size of 0. 2mm, the dimension L2 in the second direction is 0. 25 mm, has a larger area than other electron beam passing holes 26. In addition, the electron beam passing holes 26a near the standing position of the separator indicate the electron beam passing holes with respect to the _ first and second separators 30a and 30b. In this embodiment, three electron beams are located on each side of the separator. The area of the passage hole 26a is larger than that of other electron beam passage holes. The number of such large-area electron beam passage holes 26a is not limited to three, and if necessary, four or more may be formed on one side of the separator. As shown in Fig. 24 and Fig. 25, the support substrate 24 of each of the spacer structures includes a plurality of height relaxation portions 54 formed at the standing positions of the spacer 30, respectively. Each of the height-relief portions 54 has a recessed portion 56 formed on the first φ surface 24a side of the support substrate 24, and has a plate thickness of 1/2 or less with respect to the plate thickness of the other portion of the support substrate. With this configuration, each of the height relaxation portions 54 is formed to be elastically deformable in a direction substantially perpendicular to the first surface 24a, that is, in a height direction of the partition member 30. Each of the spacers 30 is erected on the second surface 24 b of the support substrate 24, and is opposed to the recessed portion 56. The recess 5 6 is formed to have a depth capable of absorbing the uneven and deformable strength of the spacer 30 when the atmospheric pressure is applied. Various methods for processing the recessed portion 56 on the support substrate 24 can be considered. For example, in the case of -43 · 200529270 (40) for the production of the support substrate 24, when the etching is performed, the support substrate is subjected to half-etching. The recesses are processed simultaneously with the electron beam passing holes, and the recesses 56 can also be formed by machining such as press processing. In this embodiment, each of the recesses 56 is formed on the end surface of the spacer 30 on the substrate 24 side, that is, abuts Faces are similar in shape. The recessed portion 56 is formed larger than the area of the abutting surface of the separator 30. The surface of the support substrate, including the inner surface of the recessed portion 56, is covered with an insulating layer 37. g The four separator structures 22a, 22b, and 22d configured as described above are arranged in a gap in the second direction Y, for example, and cover the entire area. Each spacer structure is in surface contact with the first substrate through the support substrate 24, and the extended end of the spacer 30 abuts on the second substrate 1 surface, thereby supporting the atmospheric pressure load acting on these substrates, while the The interval is maintained at a predetermined interval. In the ninth embodiment, the other components are the same as those in the first and eighth embodiments described above, and the same reference numerals are attached to the same portions. The detailed description is omitted. The SED of the ninth embodiment and its partitioning system can be manufactured using the same manufacturing method as the manufacturing method of the above embodiment. In the ninth embodiment, the same effects as those of the first, fourth, and fourth embodiments can be obtained. In addition, the present invention is not limited to the above-mentioned embodiments, and various elements can be deformed within the scope that does not deviate from the gist of the invention, and various inventions can be formed by adapting the plural components disclosed in the above embodiments . For example, several constituent elements may be deleted from the constituent elements shown in the embodiment. In addition, it is also possible to combine different realities (half department. And into.) Supported area: 22c of 50, display area: 10 internal substrates 4 and No. 2 of the shape, the system is made by the piece structure method 5 implementation stage Centralized. When all the constituent elements of the construction form -44-200529270 (41) are combined appropriately, the diameter or height of the separator, the dimensions and materials of other constituent elements are not limited to the above-mentioned embodiments, and may be based on Appropriate selection needs to be made. The charging conditions of the material for forming the separator can be variously selected as needed. Furthermore, the present invention is not limited to the use of a surface-conduction electron-emitting device as an electron source. Image display devices for other electron sources, such as carbon nano-tubes (CNTs). [Possibility of industrial use] In a plurality of electron beam passing holes formed in a support substrate, a spacer is placed in an upright position. The area of the nearby electron beam passing hole is larger than the area of other electron beam passing holes, which can prevent the image from being defective due to the penetration of the separator material, and the display quality can be reduced. Image display device. Furthermore, it is possible to provide an image display device capable of suppressing the occurrence of electric discharge and improving the atmospheric pressure resistance. Φ It is possible to achieve miniaturization by dividing the separator structure into a plurality of sizes, and each separator can be achieved. Structure positioning accuracy and processing accuracy are improved, and manufacturing cost is reduced. Therefore, a large and high-definition image display device can be obtained. [Schematic description] FIG. 1 is a SED showing a first embodiment of the present invention Figure 2 is a perspective view of the SED cut along line II-II of Figure 1. -45- 200529270 (42) Figure 3 is an enlarged cross-sectional view of the SED. Figure 4 shows An enlarged perspective view of a part of the spacer structure of the above-mentioned SED. Fig. 5 is a cross-sectional view showing a supporting substrate and a molding die used in the manufacture of the spacer structure. A cross-sectional view of a tightly assembled assembly. Fig. 7 is a cross-sectional view showing a state in which the above-mentioned forming die is opened. Fig. 8 is a perspective view showing a separator structure of the SED according to the second embodiment of the present invention. Fig. 9 is a sectional view showing an SED according to a third embodiment of the present invention. Fig. 10 is a sectional view showing an SED according to a fourth embodiment of the present invention.
第11圖是沿著第10圖的線XI — XI切斷的上述SED 的斜視圖。 第12圖是表示放大上述Sed的剖面圖。 第13圖是表示上述SED之分隔件構體的支持基板之 平面圖。 第14圖是表示放大上述SED的一部分之剖面圖。 第15圖是表示本發明之其他實施形態的SED的支持 基板之平面圖。 第16圖是表示本發明之第5實施形態的SED之斜視 圖。 •46- 200529270 (43) 第1 7圖是表示沿著第1 6圖的線X V 11 _ X V11切斷之 上述SED的斜視圖。 第18圖是表示放大上述SED的剖面圖。 第19圖是表示上述SED之第2基板及複述分隔件構 體的斜視圖。 第20圖是表示本發明之第6實施形態之SED的第2 基板及複數分隔件構體的斜視圖。 第21圖是表示本發明之第7實施形態之SED的第2 基板及複數分隔件構體的斜視圖。 第22圖是表示本發明之第8實施形態之SED的剖面 圖。 第23圖是表示本發明之第9實施形態之SED之部分 剖切的斜射圖。 第24圖是前述SED的剖面圖。 第25圖是表示前述SED的分隔件構體的斜射圖。 [ 主要兀件符號說 10 第1基板 11 遮光層 12 第2基板 14 側壁 15 真空外圍器 16 螢光體螢幕 17 金屬背層 -47- 200529270 (44) 18 電子發射元件 19 吸氣膜 20 密封材 2 1 配線 22、22a、22b、22c、22d 分隔件構體 24、50 支持基板 24a 第1表面Fig. 11 is a perspective view of the SED cut along a line XI-XI in Fig. 10. Fig. 12 is an enlarged cross-sectional view showing the Sed. Fig. 13 is a plan view showing a supporting substrate of the spacer structure of the SED. Fig. 14 is a cross-sectional view showing a part of the SED in an enlarged manner. Fig. 15 is a plan view showing a support substrate for an SED according to another embodiment of the present invention. Fig. 16 is a perspective view showing an SED according to a fifth embodiment of the present invention. • 46- 200529270 (43) Fig. 17 is a perspective view showing the SED cut along the line X V 11 _ X V11 in Fig. 16. Fig. 18 is an enlarged cross-sectional view showing the SED. Fig. 19 is a perspective view showing the second substrate and the repeater spacer structure of the SED. Fig. 20 is a perspective view showing a second substrate and a plurality of spacer structures of an SED according to a sixth embodiment of the present invention. Fig. 21 is a perspective view showing a second substrate and a plurality of spacer structures of an SED according to a seventh embodiment of the present invention. Fig. 22 is a sectional view showing an SED according to an eighth embodiment of the present invention. Fig. 23 is an oblique view showing a partial cut of an SED according to a ninth embodiment of the present invention. Fig. 24 is a sectional view of the SED. Fig. 25 is an oblique view showing a spacer structure of the SED. [Symbols of main components 10 First substrate 11 Light-shielding layer 12 Second substrate 14 Side wall 15 Vacuum peripheral 16 Phosphor screen 17 Metal backing layer-47- 200529270 (44) 18 Electron emitting element 19 Air-absorbing film 20 Sealing material 2 1 Wiring 22, 22a, 22b, 22c, 22d Separator structure 24, 50 Support substrate 24a First surface
24b 第2表面 26、26a 電子束通過孔 27 28 30 30a 30b 32 36a 36b 橋接 塗佈層 分隔件 第1分隔件 第2分隔件 支持構件 上模 下模 3 7 絕緣層 4 0 a、4 0 b 分隔件形成孔 4 1 a、4 1 b 抵接面 42 組裝體 54 高度緩和部 56 凹部 -48-24b 2nd surface 26, 26a Electron beam passage holes 27 28 30 30a 30b 32 36a 36b Bridge coating layer partition 1st partition 2nd partition support upper die 3 7 Insulating layer 4 0 a, 4 0 b Separator forming holes 4 1 a, 4 1 b abutment surface 42 assembly 54 height relief portion 56 recessed portion -48-