200525714200525714
五、發明說明α) 【發明所屬之技術領域】 本發明係有關一種影像感測器之封裝，特別是關於 種具有南潔淨度之影像感測晶片封裝結構及其封盤古^ 【先前技術】 法 在影像感測元件之封裝技術中，習知通常係利用晶片 直接連接基板（chip on board，C0B)之技術來達到封1 的。COB之封裝製程通常包括晶片切割（die saw )、黏晶 (die bond)、銲線（wire bond)及封膠（m〇id)等步 驟，由於COB封裝技術具有打線製程繁複、良率低、尺 大及整體製程繁複等缺失，目前已逐漸發展出利用覆曰 (flip chip)及晶圓級封裝等技術來組裝影像感測元件曰曰。 習知晶圓級封裝具有填充膠體易產生氣泡等問題而不 、，制良率° 3外’覆晶技術則係先在晶片上長金凸塊， :於接至電路基板上來達成覆晶之製作，然而 到污染，且因盔通去夕阳眩处址 勿又 _曰Η夕志&…、阻隔、"構，封裝膠體容易溢流至感 吏得晶片在整個封裝過程中遭受污染之機 2 ϊ:封i對於潔淨要求十分嚴格之影像感測晶片 而^該些封裝方法則不甚理想。 式影t ί: ί 4+ ΐ發明係針對上述之問題，提出-種覆晶 該等缺失。装、、·°構及其封裝方法，以有效克服習知之 【發明内容】 主要目的’係在提供一種影像感測晶片封裝 五、發明說明（2) 結構及其封裝方法，藉由蔣 晶，且在電路基板之：在電路基板上而後再覆 膠體，以改善習知晶片! 一隔絕膠體來隔絕封裝 感測曰β $古、智、< &片封裝時易遭受污染問題，達成影像 感測B曰片之同潔淨度及高可靠度之要求。 方法本ί:ΐί一目的’係在提供一種影像感測晶片封裝 ii yield)容易控制且產量高之優點者。 m再一目的’係使整體封裝結構之尺寸 片尺寸，並達成薄型化之功效。 為達到上述之目的，本發明係提供一電路基板，其係 3一開冑，並在電路基板上位於該開窗之周圍形成複數 •凸塊電連接該電路基板；接著將一影像感測晶片透過 該等導電凸塊覆晶在電路基板上，且使其感測區自該開窗 露出，並將一隔絕膠體設置在電路基板上且位於該感測區 及該等導電凸塊之間，而後將一封裝膠體填充在導電凸塊 之周圍’且填充時利用隔絕缪體隔絕該封裝膠體溢流至晶 片之感測區。 底下藉由具體實施例配合所附的圖式詳加說明，當更 容易瞭解本發明之目的、技術内容、特點及其所達成之功 效0 【實施方式】 本發明係將導電凸塊長在電路基板上，藉以將影像感 測晶片覆晶於電路基板，並在電路基板之開窗周圍設有一 隔絕膠體，以避免填充封裝膠體時污染影像感測晶片之感 測區。 200525714 五、發明說明（3) 本發明之影像感測晶片封裝結構通常為一塑膠無引腳 封裝體（plastic leadless chip carriers，PLCC)或陶甍 無引腳晶片封裝體（ceramic leadless chip carriers， CLCC)。如第一圖所示，為本發明之結構剖視圖，一影像 感測晶片封裝結構1 0包括一電路基板1 2，其係形成為一開 口朝下之容置室14，在容置室14之承載面開設有一開窗 1 6，且在容置室1 4之側壁内部埋設有複數引線1 §，每一引 線18之二端各延伸至容置室14之承載面表面及側壁表面， 以分別連接於一鮮墊（圖中未示）及一錫球28 ;該等銲墊係 設置在電路基板12位於開窗16周圍之下表面上，且在每一 知墊上鍵設有一導電凸塊2〇，以使導電凸塊2〇與電路基板 12内部之引線18形成電連接關係；在該等導電凸塊2〇覆上 汉有一影像感測晶片2 2，其係設有一感測區2 2 2對應於該 開窗16，以透過該等導電凸塊2〇而覆晶於電路基板12上， 且使感測區222朝向該開窗16露出；一封裝膠體24係填充 在該等導電凸塊20之周圍並包覆於影像感測晶片 測區外，此封裝膠體24通常為模塑化合物；另片在= 板1 2表面上且位於該感測區222及封裝膠體24之 :::膠體26，其通常係由環氧樹脂系之材料 含：；氧樹脂材料’以藉由隔絕膠體26隔絕 之==另右其在#填充時不會溢流至影像感測晶片22 二、、】£222，另有一透明蓋體3〇，其係蓋設在開窗^ ’以封閉該開窗1 6，該透明篆俨q n、s水炎 膠材質所構成者。4月盍體30通常為麵或透明塑V. Description of the invention α) [Technical field to which the invention belongs] The present invention relates to the packaging of an image sensor, and more particularly to a packaging structure of an image sensing chip with a South cleanliness and its sealing plate ^ [prior art] method In the packaging technology of image sensing elements, it is common practice to use the technology of directly connecting a chip on board (C0B) to achieve package 1. The packaging process of COB usually includes steps such as die saw, die bond, wire bond, and mold. Because COB packaging technology has complicated wiring process, low yield, The large size and the complexity of the overall process have been gradually developed. Currently, technologies such as flip chip and wafer-level packaging have been developed to assemble image sensing devices. It is known that wafer-level packaging has problems such as filling colloids that are prone to bubbles, and the yield rate is 3 °. The flip-chip technology is to first grow gold bumps on the wafer: the chip is connected to the circuit substrate to achieve the flip-chip production. However, when it is contaminated, and the helmet is gone to the setting point of the setting sun, it is _ Η Η 夕 志 & ..., barrier, " structure, the packaging colloid is easy to overflow to the sensor, the chip is subject to pollution during the entire packaging process 2 ϊ: Seal the image sensor chip with very strict cleanliness requirements. ^ These packaging methods are not ideal.式 影 t ί: ί 4+ The invention is to address the above-mentioned problems, and proposes-a kind of flip chip. Structure, packaging structure and packaging method to effectively overcome the conventional [Summary of the Invention] The main purpose is to provide an image sensing chip package. 5. Description of the invention (2) Structure and packaging method, by Jiang Jing, And in the circuit substrate: on the circuit substrate and then covered with gel, to improve the conventional chip! Isolate the gel to isolate the package sensor, such as β $ 古 、 智 、 < & Sense the same cleanliness and high reliability requirements of B-sheets. The method of the present invention is to provide an image sensing chip package which has the advantages of easy control and high yield. Another purpose of m is to reduce the size of the overall package structure and the size of the chip, and to achieve a thinning effect. In order to achieve the above-mentioned object, the present invention provides a circuit substrate, which is opened and closed, and a plurality of bumps are formed on the circuit substrate around the window to electrically connect the circuit substrate; and then an image sensing chip is provided. Through the conductive bumps to cover the circuit substrate with the sensing area exposed from the opening window, and an insulating gel is arranged on the circuit substrate between the sensing area and the conductive bumps, Then, a packaging gel is filled around the conductive bumps, and the sealing gel is used to isolate the packaging gel from overflowing to the sensing area of the chip during the filling. In the following, detailed descriptions will be provided with specific examples and accompanying drawings to make it easier to understand the purpose, technical content, features and achieved effects of the present invention. [Embodiment] The present invention is a conductive bump grown in a circuit The substrate is used to cover the image sensing chip on the circuit substrate, and an insulating gel is provided around the window of the circuit substrate to avoid contaminating the sensing area of the image sensing chip when the packaging gel is filled. 200525714 V. Description of the invention (3) The image sensing chip packaging structure of the present invention is usually a plastic leadless chip carrier (PLCC) or ceramic leadless chip carriers (CLCC) ). As shown in the first figure, it is a cross-sectional view of the structure of the present invention. An image-sensing chip package structure 10 includes a circuit substrate 12 which is formed as an accommodation chamber 14 with an opening facing downward. An opening window 16 is provided on the bearing surface, and a plurality of leads 1 § are buried inside the side wall of the accommodating room 14. Each end of each lead 18 extends to the surface of the accommodating surface 14 and the side wall of the accommodating room 14, respectively Connected to a fresh pad (not shown) and a solder ball 28; these pads are arranged on the lower surface of the circuit substrate 12 around the window 16 and a conductive bump 2 is provided on the key of each pad 〇, so that the conductive bumps 20 and the leads 18 inside the circuit substrate 12 form an electrical connection relationship; the conductive bumps 20 are covered with an image sensing chip 22, which is provided with a sensing area 2 2 2 corresponds to the opening window 16 so as to cover the circuit substrate 12 through the conductive bumps 20 and expose the sensing area 222 toward the opening window 16; a sealing gel 24 is filled in the conductive projections. Surrounding the block 20 and covering the image sensing chip outside the measuring area, the encapsulant 24 is usually molded and compounded. The other piece is on the surface of the plate 12 and is located in the sensing area 222 and the encapsulating gel 24 ::: colloid 26, which is usually made of epoxy-based materials :; the oxygen resin material is used to isolate The colloid 26 is isolated == the other is that it will not overflow to the image sensor chip 22 when it is filled. 2.】 £ 222, and a transparent cover 30, which is located in the opening window ^ 'to close the Windows 16 are made of transparent 篆 俨 qn, s hydrogel material. April Carcass 30 is usually noodle or transparent plastic
200525714 五、發明說明（4) 〜 睛再參閱第二圖所示，為本創作另一實施例之結構剖 視圖’在衫像感測晶片2 2位於非感測區之表面上更貼設有 一散熱片32，常用者為金屬片，以提供加強影像感測晶 22散熱之作用。 在了解本發明之整體結構後，接續將以第二圖所示結 構詳細說明本發明之各結構及製作方法，請參閱第三圖至 第九圖所示。製作此影像感測晶片封裝結構1〇之方法係包 括下列步驟：首先，如第三圖所示，提供一電路基板12， 此電路基板12通常為具有承載面及側壁之印刷電路板 jCB)，且該承載面係設有一開窗16，開窗16周圍已事先 設有複數銲墊（圖中未示），以作為1/〇訊號連接點，且於 電路基板12内部設有複數引線18分別連接至該等銲墊，每 一引線18並延伸至電路基板12之側壁表面外，其中位於電 =基板12内部之引線18，係可藉由習用之穿孔及電鍍技術 製作；如第四圖所示，在電路基板12的銲墊上鍍設複數 ，電凸塊20，常用者為金凸塊；在鍍完導電凸塊2〇之後， ，即如第五圖所示，將一隔絕膠體26塗在電路基板12的開 囪周圍且位於靠近窗口處，並烘烤該隔絕膠體26，此隔絕 膠體26通常係由環氧樹脂系之材料所構成，較佳者為無機 的含矽環氧樹脂系材料；待烘烤完之後，接著如第六圖所 示，將一影像感測晶片2 2銲接至該等導電凸塊2 〇上，以使 影像感測晶片22透過該等導電凸塊2〇電連接於電路基板 2，且令影像感測晶片22之感測區222朝向該開窗丨6而露200525714 V. Description of the invention (4) ~ Please refer to the second figure for a cross-sectional view of the structure of another embodiment of the present invention. A heat dissipation is attached to the surface of the shirt-like sensor chip 2 2 on the non-sensing area. The sheet 32 is usually a metal sheet, so as to enhance the heat dissipation of the image sensing crystal 22. After understanding the overall structure of the present invention, the structure and manufacturing method of the present invention will be described in detail with the structure shown in the second figure, please refer to the third to ninth figures. The method for manufacturing the image sensing chip package structure 10 includes the following steps: First, as shown in the third figure, a circuit substrate 12 is provided. The circuit substrate 12 is usually a printed circuit board (JCB) having a bearing surface and a sidewall. And, the bearing surface is provided with an opening window 16, and a plurality of solder pads (not shown in the figure) have been provided around the opening window 16 in advance to serve as 1/0 signal connection points, and a plurality of leads 18 are provided inside the circuit substrate 12 respectively. Connected to these pads, each lead 18 extends beyond the side wall surface of the circuit substrate 12, among which the leads 18 inside the electrical substrate 12 can be made by conventional perforation and electroplating techniques; as shown in the fourth figure As shown in the figure, a plurality of electrical bumps 20 are plated on the solder pads of the circuit substrate 12, and gold bumps are commonly used; after the conductive bumps 20 are plated, as shown in the fifth figure, an insulating gel 26 is coated. The insulating colloid 26 is baked around the opening of the circuit board 12 near the window, and the insulating colloid 26 is usually made of an epoxy resin material, preferably an inorganic silicon-containing epoxy resin. Materials; after baking, As shown in the sixth figure, an image sensing chip 22 is soldered to the conductive bumps 20 so that the image sensing chip 22 is electrically connected to the circuit substrate 2 through the conductive bumps 20, and The sensing area 222 of the image sensing chip 22 is exposed toward the opening window 6
200525714 五、發明說明（5) 其中，在進行影像感測晶片2 2的安裝步驟之前或之 後’更可再包括一步驟’如第七圖所示，係將一透明蓋體 30黏設於開窗1 6上，以封閉該開窗1 6，而後在於透明蓋體 3 0之表面上貼覆一保護膜。另外，由於凸塊覆晶之作業溫 度約400 °C，故前述隔絕膠體26之選用考量需耐熱4〇〇。€ = 上，且具有好的内聚力，藉以在烘烤過後不致爆開，同時 兼具有柔軟性，以便與影像感測晶片22形成良好之氣密且 不傷晶片表面。基於該等考量，隔絕膠體26之材料以無機 的含矽環氧樹脂系材料為佳。 在完成覆晶作業之後，接續如第八圖所示，將一封裝 谬體24填充於電路基板12上以包覆該等導電凸塊2〇，封裝 膠體24通常為模塑化合物，常見者為環氧樹脂，其中在填 充封裝膠體24之際，藉由隔絕膠體26之阻隔，係可有效防 止封裝膠體24溢流至影像感測晶片22之感測區222上；之 後再將複數錫球28焊接至電路基板12之引線18露出的位 置。至此，已初步完成影像感測晶片封裝結構丨〇 結構的製作。 王要 在完成錫球28之植設之後，接著如九圖所示，將一 熱片32貼設至影像感測晶片22之非感測區上， 膠體24填滿影像感測晶片22與電路基板_之^將= 封該影像感測晶片2 2之非感測區。 、 與上ΐ Ll對於第一圖所示之結構而言’纟製作方法大致 導電^ LI方法相同’不同處係在填充封裝膠體24以包覆 導電凸塊2〇之際’係、將封裝膠體24直接填滿空隙，以同時200525714 V. Description of the invention (5) Among them, before the installation steps of the image sensing chip 22 are performed, or “a step may be included”, as shown in the seventh figure, a transparent cover 30 is adhered to the opening. On the window 16, the open window 16 is closed, and a protective film is pasted on the surface of the transparent cover 30. In addition, since the operating temperature of the bump cladding is about 400 ° C, the selection and consideration of the aforementioned insulating colloid 26 needs to be heat-resistant 400. € =, and has good cohesion, so that it does not explode after baking, and at the same time has flexibility, so as to form a good airtightness with the image sensing wafer 22 without hurting the surface of the wafer. Based on these considerations, the material of the insulating colloid 26 is preferably an inorganic silicon-containing epoxy-based material. After completing the flip-chip operation, as shown in the eighth figure, a packaging body 24 is filled on the circuit substrate 12 to cover the conductive bumps 20. The packaging gel 24 is usually a molding compound, and the common one is Epoxy resin, in which the sealing gel 26 is blocked when filling the sealing gel 24, can effectively prevent the sealing gel 24 from overflowing to the sensing area 222 of the image sensing chip 22; then, a plurality of solder balls 28 Solder to a position where the leads 18 of the circuit board 12 are exposed. So far, the fabrication of the image sensing chip package structure has been preliminarily completed. After completing the installation of the solder ball 28, Wang Yao then affixed a hot piece 32 to the non-sensing area of the image sensing chip 22 as shown in Fig. 9, and the gel 24 filled the image sensing chip 22 and the circuit. The substrate_zhi ^ will seal the non-sensing area of the image sensing chip 22. For the structure shown in the first figure, the structure shown in the first figure is similar to the method of “纟 The manufacturing method is roughly conductive ^ The LI method is the same” The difference is that when the packaging gel 24 is filled to cover the conductive bump 20, the packaging gel is 24 directly fill the gaps to simultaneously
200525714 五、發明說明（6) ^ 包覆影像感測晶片22之非感測區，且後績之 熱片之設置。 則無散 因此，本發明捨棄習知將導電凸塊長在感 後覆晶之技術’藉由先將凸塊長在電路基板上而後^而 2並且j電路基板之開窗周圍設有隔絕膠體以： 膠體之溢流’以藉此改善習知封裝過程中晶片 封二 問題，俾能符合影像感測晶片之高潔淨度之要求.二：染 由於本發明提供之封裝方法為單顆晶片封•裝，故良卜， (yield)容易控制且產量高，可改善晶圓級封裝不易控 良率之問題，同時本發明更可克服習封^ 寸不易微縮之缺失，使整體封裝結構之尺寸近似晶尺 寸’並達成薄型化之功效。 以上所述係藉由實施例說明本發明之特點，其目 ，熟習該技術者能暸解本發明之内容並據以實施，而非 :士發明之專利範圍，&，凡其他未脫離本發明所揭示2 所完成之等效修飾或修改，仍應包含在以下 請專利範圍中。 ^心甲 第10頁 200525714200525714 V. Description of the invention (6) ^ The non-sensing area of the image sensing chip 22 is covered, and the post-heating sheet is set. Therefore, the present invention renounces the conventional technique of growing conductive bumps on the substrate after sensing, by 'growing the bumps on the circuit substrate first, and then ^ 2, and an insulating gel is provided around the opening of the circuit substrate. To: "The overflow of colloids" is used to improve the problem of wafer sealing during the conventional packaging process, which can meet the requirements of high cleanliness of image sensing wafers. 2: The packaging method provided by the present invention is a single wafer sealing • Installation, therefore, yield is easy to control and high yield, which can improve the problem of difficult to control the yield of wafer-level packaging. At the same time, the present invention can overcome the lack of easy-to-scale shrinkage and make the size of the overall packaging structure Approximate crystal size 'and achieve thinning effect. The above is the description of the characteristics of the present invention through the examples. The purpose is that those skilled in the art can understand the content of the present invention and implement it based on the scope of the invention, rather than the patent scope of the invention, & Equivalent modifications or amendments made by Revealed 2 should still be included in the scope of the following patents. ^ Heart p. 10 200525714
晶片封裝結樽 1 〇 影像感測 W電路基板 16開窗 20導電凸塊 222感測區 2 6 隔絕膠體 3 〇透明蓋體 14 18 22 24 28 32 t置室 弓丨線 影像感測晶片 封裝膠體 錫球 散熱片Chip package junction bottle 1 〇 Image sensing W Circuit board 16 Opening window 20 Conductive bump 222 Sensing area 2 6 Isolation gel 3 〇 Transparent cover 14 18 22 24 28 32 t Room bow 丨 Line image sensing chip packaging gel Solder ball heat sink