200525584 九、發明說明： 【發明所屬之技術領域】 本發明係、關於-種對於例如半導體晶圓等之基板施行氧 化處理、CVD等特定之熱處理的熱處理裝置以及熱處理方 法。 【先前技術】 作為對於半導體晶圓（以下簡稱為「晶圓」）分批施行藉由 CVD(chemical vapor deposition，化學氣相沉積）之成膜處理 或氧化、擴散處理等之熱處理的裝置有縱型熱處理裝置。 該熱處理裝置於加熱爐内設有縱型反應管，於開關反應管 之下端開口部之蓋體上搭載有晶圓保持具，於該晶圓保持 具將多數晶圓保持為架狀，藉由蓋體上升將晶圓保持具移 入反應管内之後，施行特定之熱處理。 另方面曰曰圓收谷於載體並移送至工廠内之各站臺或 保管庫，其間會附著有微粒或有機物，或藉由大氣形成自 然氧化膜。故而一般而言將如下進行，熱處理裝置另外設 置^洗淨裝置，於該洗淨裝置中使用以氫氟酸為主之複數 種藥液依次洗淨晶圓，並藉由載體將洗淨之晶圓搬運至熱 處理裝置中。 然而若於不同於熱處理裝置區域之其他區域設置洗淨裝 置’則自洗淨至移入至熱處理裝置之反應容器内為止將曝 露於大氣中，自然氧化膜得以成長，如若於裝置中薄膜化 進一步發展，則即使為較少之自然氧化膜亦會對裝置特性 造成影響。又有機物或無機物之雜質亦會對裝置特性造成 96002.doc 200525584 影響。作為構成例如CMOS之閘極氧化膜之矽氧化膜的目標 膜厚今後有設為1 0 nm以下之動向，於此種情況下要求盡可 能不將雜質帶入反應容器内，亦即盡可能使晶圓之表面保 持為清潔之狀態。 眾所周知自此種要求，有圖8(a)、（b)所示之熱處理裳置 (例如參照專利文獻1)。該熱處理裝置包含移入、移出收納 有晶圓之載體的移入移出組塊B 1，用以洗淨自載體所取出 之晶圓的洗淨腔B2，以及成膜洗淨後之晶圓w之成臈腔 B3。於洗淨腔B2内配置有將晶圓貨保持為架狀之晶舟u， 載體内之晶圓依次載置於晶舟11，並將洗淨腔B2内設為氣 密空間後，自垂直配置之喷嘴12噴射藥液至各晶圓w。之 後，自其他之喷嘴12供給純水，進而自喷嘴供給IPA(異丙 醇）後’藉由馬達Μ旋轉晶舟11，藉由其離心力甩開晶圓w 上之水滴。如此之後，將洗淨腔B2内設為氮氣氣體環境， 繼而晶舟11移載於成膜腔B3之下方的升降機。 [專利文獻1]曰本專利特開平8-203852號公報（段落〇〇28 之第7_9行，圖1、7、9) [發明所欲解決之問題] 然而於上述之熱處理裝置中，將洗淨後之晶圓w轉移至 成膜腔B3之期間，晶圓W曝露於周圍之氣體環境中例如會 於表面生成自然氧化膜，或於該氣體環境中浮游之例如烴 等之有機物或水分等之雜質會附著於晶圓W之表面。於此 狀態下若對於晶圓W施行用以形成例如矽氧化膜之熱處 理，則有以下之顧慮：自然氧化膜所形成之部位之膜厚將 96002.doc 200525584 k厚’於面内厚度產生不均_，形成包含雜質之低品質矽 氧化膜’其冑對所製造之裝置特性造成影響。 進而’需要用以洗淨之專用腔室或，將晶舟11自該腔室 轉移至舟升降機之舟處理器，故而裝置為較大規模，會姑 據較大空間。X ’於縱型熱處理裝置中，存有盡可能控制 反應容器之高度且增多處理片數之傾向，故而晶舟之間距 不斷變小。該情料，於自上述之圖8(b)料之喷嘴供給洗 淨液之方法中係難錢洗淨液充分遍佈各晶圓額，因此 存有無法充分洗淨例如於基板表面殘留有自然氧化膜之顧 慮。 本發明係基於此種情況開發而成者，其目的在於，提供 一種於加熱爐内熱處理基板時，可以高清潔度熱處理基板 表面之熱處理装置以及熱處理方法。 【發明内容】 本發明之熱處理裝置，其係對於反應容器内之基板藉由 加熱機構施行加熱，並施行特定之熱處理者，其特徵在於： 包含 洗淨液供給機構’其係於基板移入反應容器内之後，用 以將洗淨液供給至該反應容器内並洗淨基板， 排液口，其係用以自上述反應容器内排出洗淨液， 以及處理氣體供給機構，其於排出上述洗淨液之後，將 用以熱處理基板之處理氣體供給至反應容器内。 又’另一發明之熱處理裝置，其係對於反應容器内之基 板’藉由設置於反應容器外部之加熱機構施行加熱，並施 96002.doc 200525584 行特定之熱處理者，其特徵在於：包含 蓋體，其開關上述反應容器之移入口， 基板保持具，其設置於該蓋體並保持基板， 移入移出機構，其將該基板保持具移入、移出於上述 反應容器， 洗淨液供給機構，其係於保持基板之基板保持具移入反 應合器内之後，用以將洗淨液供給至該反應容器内並洗淨 基板， 排液口，其係用以自反應容器内排出洗淨液，以及 處理氣體供給機構，其於排出上述洗淨液之後，將用以 熱處理基板之處理氣體供給至反應容器内。 上述基板保持具亦可構成為使複數之基板分別朝向縱向 並於k向空間隔加以保持。又，洗淨液供給機構及/或排 液口亦可構成為設置於上述蓋體。進而洗淨液供給機構係 用以藉由洗淨液填滿反應容器内者，亦可構成為於供給洗 淨液期間排液口關閉。 本發明之熱處理方法，其特徵在於：包含 將基板移入至反應容器内之步驟， 其後，將洗淨液供給至上述反應容器内並洗淨基板之步 驟， 自上述反應各器内排出洗淨液之步驟， 、於排出上述洗淨液之後，將處理氣體供給至反應容器内 並加熱該反應容器内從而對於基板施行熱處理之步驟。 又另一發明之熱處理方法，其係對於反應容器内之基 96002.doc 200525584 板藉由設置於反應容器外部之加熱機構施行加熱，並施行 特定之熱處理者，其特徵在於：包含 使基板保持於基板保持具之步驟， 其次將上述基板保持具移人反應容㈣，藉由蓋體氣密 性地關閉反應容器之移入口之步驟， 其後，將洗淨液供給至上述反應容器内並洗淨基板之步 驟， 自上述反應容器内排出洗淨液之步驟，以及 於排出上述洗淨液之後，將處理氣體供給至反應容器内 並加熱該反應容器内從而對於基板施行熱處理之步驟。 使上述基板保持於基板保持具之步驟，亦可為以下步 驟：使複數片基板分別朝向縱向並於橫向空開間隔，使其 保持於基板保持具。又，亦可自設置於蓋體之喷口供給洗 淨液。進而，亦可自設置於蓋體之排液口排出洗淨液。進 而又供給洗淨液至反應容器内之步驟，亦可為以洗淨液填 滿該反應容器内之步驟。 [發明之效果] 根據本發明之熱處理裝置，藉由構成為於反應容器内藉 由洗淨液洗淨基板之後，繼而於該反應容器施行熱處理， 洗淨後之基板於無需曝露於周邊之氣體環境中繼續保持洗 淨後之清潔表面之狀態下施行熱處理。因此對於基板可施 行良好之熱處理。 【實施方式】 以下就本發明之熱處理裝置之實施形態加以說明，首先 96002.doc 200525584 參照圖1及圖2就裝置之整體構成加以 *况叨。该熱處理裝置 έ有移入移出口 A1，其用以移入移出 囬以木狀收納有例如15 片作為基板之晶圓W的載體C ;以及梦恭 及戎載區域（移載區 域)Α2,其用以將晶圓W移入至熱處理用之加熱爐内並施行 敎之熱處理’且此等移入移出σΑι與裝載區域Μ藉由分 隔壁20分隔氣體環境。200525584 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a heat treatment device and a heat treatment method for performing a specific heat treatment such as oxidation treatment, CVD, and the like on a substrate such as a semiconductor wafer. [Prior art] As a device for performing semiconductor film (hereinafter referred to as "wafer") batch-processing by CVD (chemical vapor deposition) film-forming treatment or oxidation, diffusion treatment, etc., there are vertical Type heat treatment device. The heat treatment device is provided with a vertical reaction tube in a heating furnace, and a wafer holder is mounted on a cover of an opening at the lower end of the switching reaction tube. The wafer holder holds a plurality of wafers in a rack shape. After the lid is lifted and the wafer holder is moved into the reaction tube, a specific heat treatment is performed. On the other hand, it is said that the round grains are collected on the carrier and transferred to the stations or storages in the factory, and there are particles or organic matter attached to them, or a natural oxide film is formed by the atmosphere. Therefore, in general, it will be performed as follows. The heat treatment device is additionally provided with a cleaning device. In the cleaning device, a plurality of chemical liquids mainly composed of hydrofluoric acid are used to sequentially clean the wafer, and the washed crystals are carried by the carrier. The circle is transferred to a heat treatment apparatus. However, if a cleaning device is installed in a region other than the heat treatment device area, it will be exposed to the atmosphere from the time of cleaning until it is moved to the reaction container of the heat treatment device, and the natural oxide film will grow. If the film is further developed in the device, , Even a small amount of natural oxide film will affect the characteristics of the device. In addition, impurities of organic or inorganic substances will also affect the characteristics of the device 96002.doc 200525584. The target film thickness of the silicon oxide film constituting, for example, the gate oxide film of CMOS, will be set to 10 nm or less in the future. In this case, it is required that impurities should not be brought into the reaction container as much as possible, that is, as much as possible. The surface of the wafer is kept clean. It is well known that from such a request, there are heat-treated clothes shown in Figs. 8 (a) and 8 (b) (for example, refer to Patent Document 1). The heat treatment device includes a moving-in and moving-out block B1 for moving in and out of a carrier containing a wafer, a cleaning chamber B2 for washing the wafer taken out from the carrier, and a wafer w臈 腔 B3. A wafer boat u that holds the wafer cargo in a rack shape is arranged in the cleaning chamber B2, and the wafers in the carrier are sequentially placed on the wafer boat 11. After the cleaning chamber B2 is set as an airtight space, it is vertical. The arranged nozzles 12 spray the chemical liquid onto each wafer w. After that, pure water is supplied from the other nozzles 12 and then IPA (isopropyl alcohol) is supplied from the nozzles', the wafer boat 11 is rotated by the motor M, and the water droplets on the wafer w are thrown away by the centrifugal force. After that, the inside of the cleaning chamber B2 is set to a nitrogen gas environment, and then the boat 11 is transferred to the elevator below the film forming chamber B3. [Patent Document 1] Japanese Patent Laid-Open No. 8-203852 (lines 7-9 of paragraph 0028, Figs. 1, 7, and 9) [Problems to be Solved by the Invention] However, in the above-mentioned heat treatment device, washing During the transfer of the cleaned wafer w to the film forming chamber B3, when the wafer W is exposed to the surrounding gas environment, for example, a natural oxide film may be formed on the surface, or organic matter such as hydrocarbons or water that floats in the gas environment Impurities will adhere to the surface of the wafer W. In this state, if a heat treatment is performed on the wafer W to form, for example, a silicon oxide film, there is a concern that the film thickness of the portion where the natural oxide film is formed will be 96002.doc 200525584 k 'in the in-plane thickness. The formation of a low-quality silicon oxide film containing impurities will affect the characteristics of the manufactured device. Furthermore, a special chamber for washing is needed or the crystal boat 11 is transferred from the chamber to the boat processor of the boat elevator, so the device is large-scale and will occupy a large space. X 'has a tendency to control the height of the reaction vessel as much as possible and increase the number of pieces to be processed in the vertical type heat treatment apparatus, so the wafer boat distance becomes smaller. In this case, in the method of supplying the cleaning liquid from the nozzle of the material shown in FIG. 8 (b) above, it is difficult to clean the cleaning liquid sufficiently across each wafer amount. Concerns about oxide film. The present invention was developed based on this situation, and an object thereof is to provide a heat treatment device and a heat treatment method capable of heat-treating a substrate surface with high cleanliness when heat-treating a substrate in a heating furnace. [Summary of the invention] The heat treatment device of the present invention is a person who heats the substrate in the reaction container by a heating mechanism and performs a specific heat treatment, and is characterized by including a cleaning liquid supply mechanism 'which is moved to the substrate in the reaction container. After that, the cleaning liquid is supplied to the reaction container and the substrate is cleaned. The liquid discharge port is used to discharge the cleaning liquid from the reaction container, and a processing gas supply mechanism is used to discharge the cleaning liquid. After the liquid is supplied, a processing gas for heat-treating the substrate is supplied into the reaction container. Another 'heat treatment device of the invention is for the substrate in the reaction container', and heating is performed by a heating mechanism provided outside the reaction container, and a specific heat treatment is performed by 96002.doc 200525584, which is characterized by including a cover body It opens and closes the moving inlet of the reaction container, and the substrate holder is provided on the cover and holds the substrate. The moving-in and removing mechanism moves the substrate holder into and out of the reaction container and the cleaning liquid supply mechanism. After the substrate holder holding the substrate is moved into the reactor, it is used to supply the cleaning liquid into the reaction container and clean the substrate. The drain port is used to discharge the cleaning liquid from the reaction container and process it. The gas supply mechanism supplies the processing gas for heat-treating the substrate into the reaction container after the cleaning liquid is discharged. The substrate holder may be configured such that a plurality of substrates are held in the vertical direction and spaced in the k-direction. The cleaning liquid supply mechanism and / or the liquid discharge port may be configured to be provided on the cover. Further, the cleaning liquid supply mechanism is configured to fill the reaction container with the cleaning liquid, and may be configured such that the liquid discharge port is closed during the supply of the cleaning liquid. The heat treatment method of the present invention is characterized in that it includes a step of moving a substrate into a reaction container, and thereafter, a step of supplying a cleaning solution into the reaction container and cleaning the substrate, and discharging and cleaning from each of the reaction containers. After the cleaning liquid is discharged, a process gas is supplied into the reaction container and the inside of the reaction container is heated to perform a heat treatment on the substrate. A heat treatment method according to still another invention is a method for heating a substrate 96002.doc 200525584 in a reaction vessel by a heating mechanism provided outside the reaction vessel and performing a specific heat treatment, characterized in that The step of the substrate holder, followed by the step of moving the substrate holder into a reaction container, and closing the inlet of the reaction container airtightly by a cover, and thereafter, supplying the cleaning solution into the above reaction container and washing A step of cleaning the substrate, a step of discharging the cleaning liquid from the reaction container, and a step of supplying a processing gas into the reaction container and heating the reaction container after the cleaning liquid is discharged, thereby performing a heat treatment on the substrate. The step of holding the substrate on the substrate holder may also be a step of orienting a plurality of substrates in the longitudinal direction and spaced apart in the lateral direction to hold the substrates on the substrate holder. Alternatively, the cleaning liquid may be supplied from a nozzle provided on the lid. Furthermore, the cleaning liquid may be discharged from a liquid discharge port provided in the cover. Furthermore, the step of supplying the washing liquid into the reaction container may be a step of filling the reaction container with the washing liquid. [Effects of the Invention] According to the heat treatment device of the present invention, the substrate is cleaned in the reaction container with a cleaning solution, and then the heat treatment is performed in the reaction container. The cleaned substrate is not exposed to surrounding gases. Heat treatment is performed while the cleaned surface is maintained in the environment. Therefore, a good heat treatment can be performed on the substrate. [Embodiment] The following describes an embodiment of the heat treatment apparatus of the present invention. First, 96002.doc 200525584 refers to Fig. 1 and Fig. 2 to describe the overall structure of the apparatus. The heat treatment device has a moving-in and moving-out port A1, which is used to move in and out of a carrier C that holds, for example, 15 wafers W as substrates in a wooden shape; and Meng Gong and Rong load area (transfer area) A2, which uses The wafer W is moved into a heating furnace for heat treatment, and the heat treatment is performed, and the moving in and out σAι and the loading area M are separated by a partition wall 20 from the gas environment.
移入移出口A1包含：將載體C自夕卜部移入移出之約載置 台21，載體c内之晶圓|於裝載區域A2移人移出時所設置之 第2載置台22，以及於兩個載置台21、22之間搬運載體c之 載體搬運機構23。該載體C，構成為為了防止於前後之步驟 =間移送晶圓W時晶圓W置於大氣中，設為例如附有蓋子之 氹閉型載體，且藉由組合於開關分隔壁2〇之開口部之門Μ 的蓋體開關機構可取下蓋體，從而載體c内得以置於裝載區 域A2之氣體環境中。 扁载區域A2形成有例如清潔空氣之側流，其分別設置有 :特疋之路徑移載晶圓w之第丨移載機構3以及第2移載機 籌 且5又置有對於晶圓W施行熱處理之加熱爐5以及將晶 圓之態樣於橫向與縱向之間變更之態樣變更機構6。 上述第1移載機構3係以特定之間隔以自由進退之方式將 自 卜 下方侧支持橫向態樣之晶圓W之裏面侧周緣部之例如複 奏^片'^_2L、 牙于以積層的臂單元31設置於搬運基體32且包含用 X將邊搬運基體32以橫向（熱處理裝置之寬度方向）以及上 下方向自由移動且圍繞垂直軸自由旋轉之驅動系33。該第1 移載機構3具有發揮於載體C與態樣變更機構6之間移載晶 96002.doc -12- 200525584 圓w之作用。 第2移載機構4係以自由進退之方式將自左右把持藉 由悲樣變更機構6得以朝向縱向之晶圓臀之周緣部例如裝 置形成區域之外側之一對臂於前後方向複數排列的臂單^ 41 6又置於搬運基體42且包含用以使該搬運基體42於橫向 (熱處理裝置之寬度方向)以及上下方向自由移動之驅動系 43。該第2移載機構4具有發揮於態樣變更機構6與加熱爐$ 之間移載晶圓W之作用。 接著參照圖3以及圖4就上述加熱爐5加以詳細敍述。圖中 5〇為爐本體，於該爐本體5〇内設置有例如圓筒型之反應容 器5 1，該反應容器5 1包含於熱處理時分隔放置有晶圓貿之 加熱氣體環境的非金屬例如石英、陶瓷等。於該反應容器 51之上端側形成有排氣口52，又於下端側形成有作為晶圓 貿之移入移出口之開口部53。於該開口部53之下方側，配 置有用以開關該開口部53之可升降之至少表面包含非金屬 例如石英、陶瓷等之蓋體7，進而，介以軸部72於該蓋體7 上叹置有於板向排列（並列）著保持有較多片例如2 5至5 〇片 縱向之晶圓W之晶舟71。該蓋體7以如下之方式構成：藉由 成為升降部之一部分的晶舟升降機73之蓋體7上升，將保持 於晶舟71之晶圓W移入至反應容器51内，且關閉反應容器 51之開口部53使該反應容器51内氣密。就使該反應容器51 氣密之構成加以詳細說明，反應容器5丨之下端部形成凸緣 部51a，繼而搭載晶舟71之蓋體7上升，當接於該凸緣部51a 之下面，藉由樹脂製密封材料例如0環5 lb氣密地密封與該 96002.doc -13- 200525584 下面之間從而塞住開口部53。 曰曰舟71洋細情況如圖5所示，於水平板74之表面對向配置 有一對縱向端板75，貫穿於該端板75、75間設置有例如3根 基板支持構件例如支持棒76。於該支持棒76之表面之一部 刀於長度方向空開間隔形成槽76a，於該槽76a例如藉由上 述第2移載機構4自上方向所載置之晶圓冒之外周緣以得以 扣合後可保持該晶圓w之方式構成。再者，亦可於水平板 74以及端板75相應需要形成使後述之處理氣體以及洗淨液 通過之開口部77。若設為此種構成，則於晶圓W處理時之 處理氣體或洗淨液流動變得順利，結果於晶圓臀彼此之間 之間隙内可均一供給處理氣體以及洗淨液，故而較為有利。 若返回圖3以及圖4說明，作為爐本體5〇之例如内側而於 ，應容器51之外側，設置有作為加熱機構之加熱器54例如 奴導線加熱器。該碳導線加熱器可以例如i 〇〇。〇 /分之高速升 溫速度加熱反應容器51内之處理氣體環境，故而較為理 想。關於該碳導線加熱器具體是，可使用將藉由使用複數 根例如線徑1〇微米左右之高純度碳纖維束編入之處理而形 成之碳導線封入於陶瓷例如外徑為十數毫米之透明石英管 中者，從而例如於爐本體50之内側沿著縱向得以形成。再 者加熱器並非僅限於此者亦可為例如鐵·鎳_鉻合 屬體。 哥义孟 认乃苟處理氣體供結 構之例如噴孔向下之供氣口 8，該供氣 必识秔口 8介以供氣路徑 例如供氣管分別連接於處理氣體之供給源，於本例中為 96〇〇2d〇C -14. 200525584 蒸氣供給源83，νι，閥門(供氣閥 υ。’於反應容器51之底部顯面，於反應容器$ 下端部上升至中階部進而於晶舟π上之晶圓w之排列方向 延伸之供給乾燥惰性氣體例如氮氣的供氮氣管84設置於晶 圓w之兩側於6亥供氮氣管84之基端側介以閥門^連& & 氮氣供給源85。該供氮氣管84 ’形成有朝向保持於晶舟7; :晶圓w噴附氣體之噴附孔84a，且具有供給至藉由後述洗 淨液洗淨後之晶圓輕其乾燥之作用。再者，亦可為於自 晶圓W之上端至下端之間的高度位置上下排列複數根供氮 軋官84之構成。若採用此種構成，則藉由晶圓W之面内可 確實地供給氮氣故而為便利之舉。又，亦可為可升降供氮 氣管84之構成。進而又於設置於反應容器51之上部之排氣 口 52構成為’連接有排氣路86例如排氣管，藉由介以閥門$ 料接之排氣機構87使反應容器51内之氣體環境得以排出 氣體至外部。於該排氣路86之中途構成為，介以閥門^連 接有例如來自上述供氮氣管84之分歧路8牦之一端，於關閉 閥門V5之狀態下打開閥門V6從而可自反應容器η之上方 供給氮氣。 又’於蓋體7之表面，以例如垂直上升之方式設置有作為 洗淨液供給機構之洗淨液喷嘴9，該洗淨液噴嘴9介以設置 於晶舟升降機73内之洗淨液供給路91例如洗淨液供給管分 別連接於作為洗淨液之例如5_1G重量％之氫氟酸供給源 92、純水供給源93以及IPA(異丙醇）之供給源94。再者， V7-V9為閥門（洗淨液供給閥門），ρι_ρ3為泵。又，於蓋體7 96002.doc 15 200525584 δ又置有用以排出洗淨液之排液口 95，該排液口 95介以設置 於曰曰曰舟升降機73内之排液路96例如排液管連通於未圖示之 沒取箱。又’於排液路96設置有開關排液口 95之閥門（排液 閥門）V10。 繼而參照圖6就變更圖1及圖2所揭示之晶圓W之態樣之 態樣變更機構6加以詳細敍述。圖中61為前面開口之旋轉 箱’於該旋轉箱6丨之内周面以空開相當於晶圓W之厚度之 間隔並上下排列之方式形成有階部62。構成為晶圓w插入 於階部62間，於該階部62支持裏面侧並保持為架狀。進而， 於旋轉箱61之背面側底部設置有於寬度方向水平延伸之旋 轉軸64，該旋轉軸64之基端側與旋轉機構65相連接。繼而 藉由该旋轉機構65旋轉軸64圍繞水平軸9〇度旋轉，藉此構 成為收納該晶圓W之旋轉箱61可前轉以及後轉，藉此晶圓w 之態樣可於縱向與橫向之間變更。 進而’於旋轉箱61之昔面揪忐古么丨l a __The moving-in and moving-out port A1 includes: the carrier 21 that has been moved into and out of the carrier C, the wafer in the carrier c | the second carrier 22 that is set when the human is moved out of the loading area A2, and the two carriers A carrier conveying mechanism 23 for conveying the carrier c between 21 and 22. The carrier C is configured to prevent the wafer W from being placed in the atmosphere when the wafer W is moved forward and backward. For example, the carrier C is a closed carrier with a lid, and is combined with the switch partition wall 20. The cover switch mechanism of the door M of the opening can be removed, so that the carrier c can be placed in the gas environment of the loading area A2. The flat load area A2 is formed with, for example, a side flow of clean air, which is respectively provided with a special transfer mechanism 3 and a second transfer mechanism 3 for transferring the wafer w on a special path, and 5 is provided with a wafer W A heating furnace 5 that performs heat treatment, and a state changing mechanism 6 that changes the state of the wafer between horizontal and vertical directions. The above-mentioned first transfer mechanism 3 is a method of freely advancing and retreating at a specific interval from a peripheral edge portion of the inner side of the wafer W that supports the lateral aspect from the lower side, such as a repetition ^ piece '^ _2L. The arm unit 31 is provided on the conveyance base 32 and includes a drive system 33 that freely moves the side conveyance base 32 in the lateral direction (the width direction of the heat treatment apparatus) and the vertical direction and rotates about the vertical axis with X. The first transfer mechanism 3 has a function of transferring a crystal 96002.doc -12- 200525584 circle w between the carrier C and the aspect change mechanism 6. The second transfer mechanism 4 is an arm in which the pair of arms are aligned in the front-rear direction by freely advancing from the left to the right by holding the saddle changing mechanism 6 toward the peripheral edge of the wafer hip in the longitudinal direction, such as one of the arms outside the device formation area. Unit 416 is placed on the transport base 42 and includes a drive system 43 for freely moving the transport base 42 in the lateral direction (the width direction of the heat treatment device) and the vertical direction. The second transfer mechanism 4 has a role of transferring the wafer W between the aspect change mechanism 6 and the heating furnace $. Next, the heating furnace 5 will be described in detail with reference to FIGS. 3 and 4. In the figure, 50 is a furnace body, and a cylindrical reaction container 51 is provided in the furnace body 50. The reaction container 51 includes non-metals such as a heating gas environment in which wafer wafers are separated during heat treatment. Quartz, ceramics, etc. An exhaust port 52 is formed on the upper end side of the reaction container 51, and an opening 53 is formed on the lower end side as a wafer inlet and outlet. On the lower side of the opening portion 53, a cover body 7 for opening and lowering at least the surface of the opening portion 53 including a non-metal such as quartz, ceramics, etc. is disposed, and further, a shaft portion 72 is sighed on the cover body 7. A wafer boat 71 is arranged in a plate direction (parallel) and holds a plurality of wafers W in a vertical direction, for example, 25 to 50 wafers. The lid body 7 is constituted as follows: the lid body 7 of the wafer boat lifter 73 which is a part of the lifting portion rises, moves the wafer W held in the wafer boat 71 into the reaction container 51, and closes the reaction container 51. The opening portion 53 hermetically seals the inside of the reaction container 51. The structure of making the reaction container 51 airtight will be described in detail. A flange portion 51a is formed at the lower end of the reaction container 5, and then the lid 7 carrying the boat 71 is raised. When it is connected below the flange portion 51a, A sealing material made of resin, for example, 0 ring 5 lb, is hermetically sealed between the bottom surface of the 96002.doc -13-200525584 and the opening 53 is blocked. The details of the boat 71 are shown in FIG. 5. A pair of longitudinal end plates 75 are arranged opposite to the surface of the horizontal plate 74. For example, three substrate support members such as a support rod 76 are arranged between the end plates 75 and 75. . A groove 76a is formed at a part of the surface of the support rod 76 at intervals in the longitudinal direction. The groove 76a can be obtained by, for example, raising the outer periphery of the wafer placed from the upper direction by the second transfer mechanism 4 described above. It can be constructed in such a manner that the wafer w can be held after being fastened. Furthermore, an opening 77 may be formed in the horizontal plate 74 and the end plate 75 to allow a processing gas and a cleaning solution to be described later, respectively. With this configuration, the flow of the processing gas or the cleaning liquid during the processing of the wafer W becomes smooth. As a result, the processing gas and the cleaning liquid can be uniformly supplied in the gap between the wafer hips, which is advantageous. . Returning to FIG. 3 and FIG. 4, as the inside of the furnace body 50, for example, a heater 54 such as a slave wire heater is provided as a heating mechanism outside the container 51. The carbon wire heater may be, for example, iOO. The high-temperature heating speed of 0 / min is preferable because the processing gas environment in the reaction container 51 is heated. As the carbon wire heater, a carbon wire formed by a process of weaving a plurality of high-purity carbon fiber bundles with a diameter of about 10 micrometers, for example, can be used to seal ceramics such as transparent quartz with an outer diameter of several ten millimeters. The tube is formed, for example, inside the furnace body 50 along the longitudinal direction. The heater is not limited to this, and may be, for example, an iron-nickel-chromium composite. Ge Yimeng acknowledged that the gas supply structure, such as the gas supply port 8 with a spray hole facing downward, must be recognized by the gas supply port 8 through a gas supply path, such as a gas supply pipe, respectively, to the supply source of the processing gas. In this example, Medium is 96〇2d〇C -14. 200525584 steam supply source 83, νι, valve (supply valve υ. 'On the bottom of the reaction container 51, the lower end of the reaction container $ rises to the middle stage and then crystal A nitrogen supply pipe 84 for supplying dry inert gas, such as nitrogen, extending in the array direction of the wafer w on the boat π is provided on both sides of the wafer w. A valve is provided at the base end side of the nitrogen supply pipe 84 through a valve ^ & & amp Nitrogen supply source 85. The nitrogen supply tube 84 'is formed to hold the wafer 7 in the direction; and: a wafer w spraying gas spray hole 84a is provided, and the wafer is supplied to the wafer after being cleaned by a cleaning solution described later; The drying effect is lightened. Furthermore, a plurality of nitrogen supply rollers 84 may be arranged up and down at a height position from the upper end to the lower end of the wafer W. If this configuration is adopted, the wafer W It is convenient for the nitrogen to be reliably supplied in the surface. Also, the nitrogen supply pipe 8 can be raised and lowered. The structure of 4. Further, the exhaust port 52 provided on the upper part of the reaction container 51 is configured to be connected to an exhaust path 86 such as an exhaust pipe, and the inside of the reaction container 51 is caused by an exhaust mechanism 87 connected through a valve. The gas environment can exhaust gas to the outside. In the middle of the exhaust path 86, a valve ^ is connected to one end of the branch path 8 牦 from the nitrogen supply pipe 84, for example, and the valve is opened with the valve V5 closed. V6 can thus supply nitrogen from above the reaction vessel η. Also, a cleaning liquid nozzle 9 as a cleaning liquid supply mechanism is provided on the surface of the cover body 7 in a vertically rising manner, for example. A cleaning liquid supply path 91, such as a cleaning liquid supply pipe, provided in the boat elevator 73 is connected to a hydrofluoric acid supply source 92, pure water supply source 93, and IPA (isopropyl), which are, for example, 5_1G% by weight of the cleaning liquid. Alcohol) supply source 94. In addition, V7-V9 are valves (cleaning liquid supply valve), and ρ_ρ3 are pumps. Also, in the cover body 7 96002.doc 15 200525584 δ is also used to drain the cleaning liquid. Port 95, the drain port 95 is provided at The drainage path 96 in the boat elevator 73, such as a drainage pipe, is connected to an unillustrated tank. The drainage path 96 is provided with a valve (drain valve) V10 that opens and closes the drain port 95. Then refer to FIG. 6 A detailed description will be given of the configuration change mechanism 6 for changing the configuration of the wafer W disclosed in FIG. 1 and FIG. 2. In the figure, 61 is a rotary box with a front opening, which is opened at the inner peripheral surface of the rotary box 6 丨. Step portions 62 are formed in a manner corresponding to the thickness of the wafer W and arranged vertically. The wafer w is inserted between the step portions 62, and the step portion 62 supports the back side and is held in a rack shape. A rotating shaft 64 extending horizontally in the width direction is provided on the bottom of the rear side of the box 61, and the base shaft of the rotating shaft 64 is connected to the rotating mechanism 65. Then, the rotation mechanism 64 rotates the rotation shaft 64 about 90 degrees around the horizontal axis, so that the rotation box 61 configured to store the wafer W can be rotated forward and backward, so that the appearance of the wafer w can be vertically and horizontally. Change between horizontal. Furthermore, "is the ancient face of the rotating box 61? L a __
板上推機構66與第2移載機構4之聯動作 將晶圓W上推至上 即，構成為藉由基 用可施行晶圓W之 96002.doc -16- 200525584 交接。 繼而就使用上述之熱處理裝置熱處理晶11W之步驟加以 說明。列舉用以於晶圓w之表面形成石夕氧化膜之氧化處理 為例說明熱處理。首先，藉由例如自動搬運機械手移入載 體c至如圖1及圖2所示之移入移出口 A1之第i載置台21，其 次於藉由m體搬運機構23得以暫時保管於例如I圖示之載 體保管庫内之後，搬運至第2載置台22。繼而載紅壓接於 分隔壁20之後，除去載體c之蓋繼而門24得以打開。 繼而第1移載機構3之臂單元31進入至載體，將複數片 例如5片曰曰圓w自載體C 一併取出並移入至縱向之旋轉箱 61。依次反覆該作業將載體C内之晶圓w移入旋轉箱61後， 藉由旋轉機構65使旋轉軸64旋轉，藉此旋轉箱61以9〇度後 轉。藉此，於旋轉箱61内水平保持之晶圓w之態樣變更為 縱向。繼而第2移載機構4之臂單元41於旋轉箱61之上方得 以引導，進而將藉由基板上推機構66自旋轉箱6丨内得以上 推至上方之複數片例如15片晶圓W—併接受並載置於晶舟 71。依次反覆該作業將特定片數之晶圓W載置於晶舟71 後，第2移載機構4將後退。 如此之後，晶舟升降機73上升保持晶圓W之晶舟71將得 以移入至反應容器5 1内，該反應容器5 1之開口部5 3藉由蓋 體7得以關閉成為氣密狀態。繼而打開閥門V5以及V7自洗 淨液喷嘴9之喷孔將洗淨液例如氫氟酸溶液供給至反應容 器5 1内，如圖7(a)所示反應容器5 1内將填滿氫氟酸溶液，並 藉由加熱器54調整洗淨液溫度至可促進反應容器5 1内所有 96002.doc 17 200525584 之洗淨液與自然氧化膜之反應而未沸騰之溫度例如8〇。〇。 再者此處之「填滿」係指洗淨液之液面位準成為高於晶圓 w之上端的狀態。如此將晶圓w浸於氳氟酸溶液中直至經過 特定之時間為止，藉此可除去形成於晶圓w表面之自然氧 化膜或附著於表面之雜質。其後，關閉閥門V7、V5，而打 開排液口 95之閥門V10並打開閥門V6，如圖7(b)所示將氮氣 自上方供給至反應容器51内並自反應容器51排出氫氟酸溶 液，於排出後關閉閥門V6、VI〇，而打開閥門V8、V5自洗 淨液噴鳴9供給作為洗淨液之純水，以純水填滿該反應容器 5 1内從而沖洗附著於晶圓w表面之氫氟酸溶液。進而關閉 閥門V8、V5，而打開閥門V6、vl〇自反應容器51排出純水 後關閉閥門V6、VI0，而打開閥門V5、V9自洗淨液喷嘴9 供給作為洗淨液之IPA並以IPA填滿反應容器51内，繼而關 閉閥門V9、V5,而打開閥門V6、V10自反應容器51排出IPA。 藉由供給該IPA之處理，附著於晶圓w之水滴（純水）之表面 張力會降低，並且沿著保持為縱向處於垂直狀態之晶圓w 之表面落下。The linkage operation of the on-board pushing mechanism 66 and the second transfer mechanism 4 pushes the wafer W up to the upper side, that is, it is configured to transfer the wafer W through the base 96002.doc -16- 200525584. Next, a procedure for heat-treating the crystal 11W using the heat-treating apparatus described above will be described. An example of the oxidation treatment for forming a stone oxide film on the surface of the wafer w is given as an example to explain the heat treatment. First, the carrier c is moved into, for example, the i-th mounting table 21 of the moving inlet A1 as shown in FIGS. 1 and 2 by an automatic conveying robot, and secondly, it is temporarily stored in, for example, the I icon by the m-body conveying mechanism 23. After being stored in the carrier storage, it is transferred to the second mounting table 22. Subsequently, the red-carrying crimp is pressed against the partition wall 20, the cover of the carrier c is removed, and the door 24 is opened. Then, the arm unit 31 of the first transfer mechanism 3 enters the carrier, and a plurality of pieces, for example, 5 pieces of circle w are taken out from the carrier C and moved to the vertical rotation box 61. After repeating this operation, the wafer w in the carrier C is moved into the rotation box 61, and then the rotation shaft 64 is rotated by the rotation mechanism 65, whereby the rotation box 61 is rotated at 90 degrees. As a result, the aspect of the wafer w held horizontally in the spin box 61 is changed to the vertical direction. Then, the arm unit 41 of the second transfer mechanism 4 is guided above the rotary box 61, and a plurality of wafers such as 15 wafers are pushed upward from the rotary box 6 丨 by the substrate push-up mechanism 66. W— And accepted and placed in the crystal boat 71. After repeating this operation, a specific number of wafers W are placed on the wafer boat 71, and the second transfer mechanism 4 is retracted. After that, the boat lifter 73 ascends and holds the wafer boat 71 of the wafer W to be moved into the reaction container 51, and the opening portion 5 3 of the reaction container 51 is closed by the cover body 7 to be airtight. Then the valves V5 and V7 of the self-cleaning liquid nozzle 9 are opened to supply the cleaning liquid such as hydrofluoric acid solution into the reaction container 51, as shown in FIG. 7 (a). The reaction container 51 will be filled with hydrogen fluoride. Acid solution, and the temperature of the cleaning solution is adjusted by the heater 54 to a temperature that can promote the reaction of all 96002.doc 17 200525584 cleaning solution in the reaction container 51 with the natural oxide film without boiling, such as 80. 〇. Furthermore, "filled up" here refers to a state where the liquid level of the cleaning liquid becomes higher than the upper end of the wafer w. In this way, the wafer w is immersed in the hydrofluoric acid solution until a specific time elapses, whereby the natural oxide film formed on the surface of the wafer w or the impurities attached to the surface can be removed. Thereafter, the valves V7 and V5 are closed, the valve V10 of the discharge port 95 and the valve V6 are opened. As shown in FIG. 7 (b), nitrogen is supplied into the reaction container 51 from above and the hydrofluoric acid is discharged from the reaction container 51. After the solution is discharged, the valves V6 and VI0 are closed, and the valves V8 and V5 are opened. The self-cleaning liquid spurts 9 and supplies pure water as the cleaning liquid. The reaction container 51 is filled with pure water to rinse the adhered crystals. Hydrofluoric acid solution on the surface of circle w. Further, the valves V8 and V5 are closed, and the valves V6 and v10 are opened. The pure water is discharged from the reaction container 51 and the valves V6 and VI0 are closed. The valves V5 and V9 are opened. The self-cleaning liquid nozzle 9 is supplied with IPA as the cleaning liquid and IPA is used. The reaction container 51 is filled, and then the valves V9 and V5 are closed, and the valves V6 and V10 are opened to discharge the IPA from the reaction container 51. By the process of supplying this IPA, the surface tension of the water droplets (pure water) attached to the wafer w is reduced, and it falls along the surface of the wafer w which is kept in the vertical state in the vertical direction.
如此於洗淨時按照氫氟酸溶液、純水以及IPA之順序施行 洗淨液供給之切換以及於排液時施行對反應容器5丨内之氮 供給之切換，以安裝於未圖示之控制部之序列程式為依據 施行切換，藉此施行此連續之閥門V5-V10之切換操作。進 而詳細的是’用以切換後述熱處理時之處理氣體、淨化氣 體之供給的閥門VI-V3、V5之切換操作亦可以安裝於該控 制部之序列程式為依據加以控制。再者，於該例中雖將IpA 96002.doc -18- 200525584 以液體狀供給’然、而亦可以蒸氣供給，此時例如亦可將另 外之IPA蒸氣之供給路設置於蓋體7。 如此之後，設為打開閥門V5關閉V6_V9之狀態，進而打 開閥門V4自供氮氣管84供給作為乾燥氣體之氮氣至反應容 器51内。如上所述般於供氮氣管84由於於對應於各晶圓ζ 之位置穿設有供氣孔84a，故而氮氣噴附至各晶圓w從而促 進乾燥，且反應容器5 1内之氮淨化亦得以施行。藉由氮氣 施行乾燥直至經過特定之時間為止後，關閉㈣叫亭止^ 氣之供給。再者，供給氮氣之期間打開設置於排氣管“之 閥門V5 ’於彳τ止氮氣之供給時關閉該閥門。 如此之後，藉由加熱器54使反應容器5 i内之處理氣體環 境升溫至特定之製程溫度例如1〇〇〇它為止，介以供氣管以< 及供氣口 8將例如氧氣以及水蒸氣之混合氣體的處理氣體 供給至反應容器51内，並藉由排氣機構87自排氣口 ^排 氣，藉此於反應容器51内形成特定之M力氣體環境例如微 減壓氣體環境，從而晶圓W之表面部之石夕得以氧化生成石夕 氧化膜。 施行上述熱處理直至經過特定之時間為止後， VU3停止處理氣體之供給，進而藉由氮氣氮淨化反應容写 加再關閉_V4之後，使晶舟升降機乃下降至特定之下 降位置為止並打開蓋體7從而使反應容器51自氣密狀態開 放’並自反應容器51内移出保持晶詩之晶舟71。繼而於 與上述之搬運路徑相反之流程，即第2移載機自晶舟^ 取出晶圓w並移入至旋轉箱61，使該旋轉箱6ΐ前轉從而變 96002.doc -19- 200525584 更阳圓w之態樣為水平之後，藉由第}移載機構3取出晶圓％ 放回至載體C從而結束熱處理。 根據上述貫施形態，構成為設置將洗淨液供給至用以熱 處理晶BJW之加熱爐5的機構，並洗淨晶圓w之後，其次供 給處理氣體至該加熱爐5從而施行熱處理，藉此洗淨後之晶 圓W可於未曝露於周邊之氣體環境中繼續維持洗淨後清潔 之表面之狀態下得以施行熱處理，從而於表面形成矽氧化 膜。因此藉由該熱處理於晶圓w之表面形成的矽氧化臈係 完全或幾乎不存在自然氧化臈之品質極為良好者，其結果 為使用s亥晶圓W可製造能獲得良好品質之薄膜閘極氧化膜 等之良好的半導體裝置。於此供給至反應容器51内之氮 氣，如上所述具有使洗淨後之晶圓W乾燥之作用，且兼有 淨化反應容器5 1内使洗淨後之晶圓w之表面保持清潔之作 用，因此於本例中可不必將裝載區域A2内設為氮氣氣體環 境，故而可簡化裝置構成，從而實現運轉成本之降低。 於上述之實施例中作為熱處理雖列舉有氧化處理，然而 亦可施行CVD，此時附著於反應容器5 i内例如反應容器$ i 之内表面、晶舟71以及蓋體7之表面等之膜為藉由洗淨液得 以洗淨之物質之情形時，可結合施行反應容器5 1内之洗 淨。作為此種膜可列舉氣化銨，作為製程可列舉副生成氣 化銨之反應例如使二氣矽烷等之矽烷系之氣體與氧氣反應 從而成膜為矽氮化膜（Si3N4膜）之製程。 進而於上述實施形態中，藉由設定將設為縱向之晶圓w 載置於晶舟71施行洗淨以及熱處理之構成，例如於洗淨 96002.doc -20- 200525584 ^應容n51排出洗淨液時，洗淨㈣由表面張力附 :於：於垂直狀態之表面之情形將較少’故該洗淨液藉由 力洛下所以可自晶圓评之表面迅速除去該等洗淨液。 因此可抑制於晶圓w之表面產生洗淨液之水痕，特別是於 由氮氣引起之乾燥時於晶圓之表面產生IPA之水痕。再者於 本發明：乾燥氣體並非僅限於氮氣’亦可選擇例如調製為 低氧且高i .高壓之乾燥空氣。此時與氮相比可更為確實 地抑制水痕之產生故而為較好之方法。 又’當說明熱處理時之效果時，於熱處理時將晶圓慨 為縱向可使自反應容器51之下端側朝向上端側流動之處理 氣體之流動方向與各晶圓w彼此間之間隙的延伸方向一 致，故而晶圓W間之氣體流動變得平穩。即於本例中藉由 將晶圓W設為縱向之處理會成為對應於反應容器51内之處 理氣體之流動的8£置，故而可均—供給處理氣體至晶圓w 之面内。再者於本發明中並非僅限於將複數片之晶圓w一 併施行熱處理之構成，例如亦可設為熱處理丨片晶圓w之枚 葉式。進而藉由載置為縱向，所獲得之效果會降低，然而 亦可將晶圓W保持為橫向施行處理。 於本發明中，並非僅限於如上所述選擇具有10(rc/分之升 溫能力的加熱器54之構成。然而如本發明般於共通之腔室 (加熱爐5)施行洗淨與熱處理之情形時，較好是於洗淨時將 洗淨液調溫至未沸騰之低溫，又於熱處理時為促進處理氣 體之反應而調溫至1000艺之高溫，因兩步驟之溫差較大， 故而選擇能力較高之加熱器54以縮短升溫時間，藉此於反 96002.doc -21 - 200525584 覆熱處理晶圓w之情形卩生％ _ 滑形時總體上可抑制產量降低。 進而於本發明中，θ ^ 日日囫貿由於得以洗淨並熱處理，故而 並非僅限於藉由密閉型 i之载體C移入移出於裝置之構成，亦 0 β i之载體。即使於該情形時亦可獲得與上述之 情形^之效果。進而亦可於載體c内縱向載置。 【圖式簡單說明】 圖1係表示本發明之熱處理裝置之實施形態的平面圖。In this way, the switching of the supply of the cleaning solution is performed in the order of the hydrofluoric acid solution, the pure water and the IPA during the cleaning, and the switching of the nitrogen supply in the reaction vessel 5 is performed during the drainage, so as to be installed in the control not shown in the figure. The sequence program of the ministry is based on switching, so that this continuous valve V5-V10 switching operation is performed. Further detailed is that the switching operation of the valves VI-V3 and V5 for switching the supply of the processing gas and the purification gas during the heat treatment described later can also be controlled based on a sequence program installed in the control section. In this example, although IpA 96002.doc -18-200525584 is supplied in a liquid state, it may be supplied by steam. In this case, for example, an additional supply path of IPA vapor may be provided on the cover 7. After that, the valve V5 is opened and the valves V6_V9 are closed, and the valve V4 is opened to supply nitrogen gas as a dry gas from the nitrogen supply pipe 84 to the reaction vessel 51. As described above, since the nitrogen supply pipe 84 is provided with a gas supply hole 84a at a position corresponding to each wafer ζ, nitrogen is sprayed to each wafer w to promote drying, and nitrogen purification in the reaction container 51 is also achieved. Execute. After drying with nitrogen until a specific time has elapsed, the supply of howling booth gas is turned off. During the supply of nitrogen, the valve V5 'provided in the exhaust pipe is opened and the valve is closed when the supply of nitrogen is stopped. After that, the temperature of the processing gas environment in the reaction vessel 5 i is raised to 5 by the heater 54. For a specific process temperature, for example, up to 1000, a processing gas such as a mixed gas of oxygen and water vapor is supplied into the reaction container 51 through the gas supply pipe < and the gas supply port 8, and an exhaust mechanism 87 is used. Exhaust from the exhaust port ^, thereby forming a specific M-force gas environment, such as a slightly decompressed gas environment, in the reaction container 51, so that the stone layer on the surface of the wafer W can be oxidized to form a stone layer oxide film. After a certain period of time elapses, VU3 stops the supply of the process gas, and then the nitrogen is purged and the reaction volume is added and then closed again_V4, so that the boat elevator is lowered to a specific lowering position and the cover body 7 is opened so that The reaction container 51 is opened from the airtight state, and the crystal boat 71 holding the crystal poem is removed from the reaction container 51. Then, the process opposite to the above-mentioned conveying path, that is, the second transfer machine from the crystal boat ^ Take out the wafer w and move it to the spin box 61, and then turn the spin box 6ΐ forward to change the shape of 96002.doc -19- 200525584 to a more positive round shape w, then take out the wafer by the} transfer mechanism 3 % Is returned to the carrier C to end the heat treatment. According to the above-mentioned embodiment, the mechanism is configured to supply a cleaning liquid to the heating furnace 5 for heat-treating the crystal BJW, and after cleaning the wafer w, the processing gas is then supplied to The heating furnace 5 is thus subjected to a heat treatment, whereby the cleaned wafer W can be subjected to a heat treatment in a state where the cleaned surface after cleaning is maintained without being exposed to the surrounding gas environment, thereby forming a silicon oxide film on the surface. Therefore, the silicon hafnium oxide formed on the surface of the wafer w by the heat treatment is completely or almost free of natural hafnium oxide with extremely good quality. As a result, the thin film gate can be manufactured using the silicon wafer W to obtain good quality. A good semiconductor device such as an oxide film. The nitrogen gas supplied into the reaction container 51 has the effect of drying the cleaned wafer W as described above, and also purifies the cleaned reaction container 51 and cleans the The surface of the circle w has the function of keeping clean, so in this example, it is not necessary to set the nitrogen gas environment in the loading area A2, so the device structure can be simplified, and the running cost can be reduced. There is an oxidation treatment, but CVD can also be performed. At this time, the films attached to the inner surface of the reaction container 5 i, such as the inner surface of the reaction container $ i, the surface of the crystal boat 71, and the cover body 7, are cleaned by the cleaning solution. In the case of a substance, washing in the reaction container 51 may be combined. As such a film, ammonium vaporization may be cited, and as a process, a reaction of by-product ammonium vaporization may be listed, for example, a silane-based gas such as digas silane and The process of forming a silicon nitride film (Si3N4 film) by the reaction of oxygen. Further, in the above embodiment, a structure in which the wafer w in the vertical direction is set on the wafer boat 71 and washed and heat-treated is set, for example, When washing 96002.doc -20- 200525584 ^ Ying Rong n51 discharged the washing liquid, the washing ㈣ is attached by the surface tension: in: the situation on the vertical surface will be less' so the washing liquid by Lilo Down so Removed from the surface of the wafer rapid assessment of such cleaning liquid. Therefore, it is possible to suppress the occurrence of water marks in the cleaning solution on the surface of the wafer w, and in particular, to generate IPA water marks on the surface of the wafer during drying caused by nitrogen. Furthermore, in the present invention, the drying gas is not limited to nitrogen ', and may be selected to be, for example, dry air with low oxygen and high i. High pressure. In this case, it is a better method to suppress the occurrence of water marks more reliably than nitrogen. Also, when describing the effect during heat treatment, the orientation of the wafer in the longitudinal direction during the heat treatment allows the flow direction of the processing gas flowing from the lower end side to the upper end side of the reaction container 51 and the extending direction of the gap between each wafer w. It is consistent, so the gas flow between the wafers W becomes stable. That is, in this example, by processing the wafer W in the vertical direction, the processing gas flows in the reaction container 51, so that the processing gas can be uniformly supplied to the surface of the wafer w. Furthermore, the present invention is not limited to a structure in which a plurality of wafers w are heat-treated together. For example, it may be a leaf type for heat-treating a plurality of wafers w. Furthermore, by placing it in the vertical direction, the effect obtained is reduced, but the wafer W can also be processed in the horizontal direction. In the present invention, it is not limited to the configuration in which the heater 54 having a heating capacity of 10 (rc / min.) Is selected as described above. However, the cleaning and heat treatment are performed in a common chamber (heating furnace 5) as in the present invention. In this case, it is better to adjust the temperature of the cleaning solution to a low temperature without boiling when washing, and to increase the temperature to 1000 ° C during the heat treatment to promote the reaction of the processing gas. The temperature difference between the two steps is large, so it is selected. The heater 54 having a higher capacity can shorten the temperature rising time, thereby generating %% in the case of anti-96002.doc -21-200525584 heat-treating the wafer w _ the overall reduction in yield during slipping can be suppressed. Further in the present invention, θ ^ Since the Japanese trade can be cleaned and heat-treated, it is not limited to the structure of the carrier i of the sealed type i being moved into the device, but also the carrier of 0 β i. Even in this case, The effect of the above-mentioned situation ^. It can also be placed vertically in the carrier c. [Brief description of the drawings] FIG. 1 is a plan view showing an embodiment of the heat treatment device of the present invention.
圖2係表示本發明之熱處理裝置之實施形態的縱剖面圖。 圖3係表示設置於上述熱處理裝置之加熱爐的縱剖面圖。 圖4係表示設置於上述熱處理裝置之加熱爐的平面圖。 圖5係表示上述加熱爐之基板保持具之立體圖。 圖6(a)、6(b)係表示設置於上述熱處理裝置4態樣變更機 構的立體圖。 圖7(a)、7(b)係表示供給洗淨液至上述熱處理裝置之反應 容器之情形的說明圖。 圖8(a)、8(b)係表示先前之熱處理裝置之說明圖。 【主要元件符號說明】 vl-Vl〇 閥門 P1_P3 泵 W 晶圓 A1 移入移出口 A2 裝載區域 3 第1移載機構 4 第2移載機構 96002.doc -22- 200525584 5 加熱爐 51 反應容器 6 態樣變更機構 61 旋轉箱 7 蓋體 8 供氣口 9 洗淨液供給口 50 爐本體 51 反應容器 51a 凸緣部 51b 0環 52 排氣口 53 開口部 54 加熱器 71 晶舟 72 軸部 73 晶舟升降機 74 水平板 75 端板 76 支持棒 77 開口部 81 供氣路徑 82 氧供給源 83 水蒸氣供給源Fig. 2 is a longitudinal sectional view showing an embodiment of the heat treatment apparatus of the present invention. Fig. 3 is a longitudinal sectional view showing a heating furnace provided in the heat treatment apparatus. Fig. 4 is a plan view showing a heating furnace provided in the heat treatment apparatus. Fig. 5 is a perspective view showing a substrate holder of the heating furnace. Figs. 6 (a) and 6 (b) are perspective views showing an aspect change mechanism provided in the heat treatment apparatus 4. Figs. Figs. 7 (a) and 7 (b) are explanatory views showing a state in which a cleaning solution is supplied to a reaction container of the heat treatment apparatus. 8 (a) and 8 (b) are explanatory views showing a conventional heat treatment apparatus. [Description of main component symbols] vl-Vl0 Valve P1_P3 Pump W Wafer A1 Move in and move out A2 Loading area 3 First transfer mechanism 4 Second transfer mechanism 96002.doc -22- 200525584 5 Heating furnace 51 Reaction container 6 state Sample changing mechanism 61 Rotary box 7 Lid 8 Air supply port 9 Cleaning liquid supply port 50 Furnace body 51 Reaction vessel 51a Flange part 51b 0 ring 52 Exhaust port 53 Opening part 54 Heater 71 Wafer 72 Shaft part 73 Crystal Boat elevator 74 Horizontal plate 75 End plate 76 Support rod 77 Opening 81 Air supply path 82 Oxygen supply source 83 Water vapor supply source
96002.doc -23- 200525584 84 供氮氣管 84a 喷附孔 85 氮氣供給源 86 排氣路 87 排氣機構 91 排液口 92 氟酸供給源 93 純水供給源 94 IPA(異丙醇）供給源 95 排液口 96 排液路 96002.doc -24-96002.doc -23- 200525584 84 Nitrogen supply pipe 84a Spray attachment hole 85 Nitrogen supply source 86 Exhaust path 87 Exhaust mechanism 91 Discharge port 92 Hydrofluoric acid supply source 93 Pure water supply source 94 IPA (isopropanol) supply source 95 Discharge port 96 Discharge path 96002.doc -24-