TW200520231A - Method of forming a floating gate for a stacked gate flash memory device - Google Patents
Method of forming a floating gate for a stacked gate flash memory deviceInfo
- Publication number
- TW200520231A TW200520231A TW093118584A TW93118584A TW200520231A TW 200520231 A TW200520231 A TW 200520231A TW 093118584 A TW093118584 A TW 093118584A TW 93118584 A TW93118584 A TW 93118584A TW 200520231 A TW200520231 A TW 200520231A
- Authority
- TW
- Taiwan
- Prior art keywords
- conductor layer
- regions
- memory device
- flash memory
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004020 conductor Substances 0.000 abstract 6
- 230000000873 masking effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/728,216 US6916708B2 (en) | 2003-12-04 | 2003-12-04 | Method of forming a floating gate for a stacked gate flash memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200520231A true TW200520231A (en) | 2005-06-16 |
TWI252588B TWI252588B (en) | 2006-04-01 |
Family
ID=34633658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093118584A TWI252588B (en) | 2003-12-04 | 2004-06-25 | Method of forming a floating gate for a stacked gate flash memory device |
Country Status (2)
Country | Link |
---|---|
US (1) | US6916708B2 (zh) |
TW (1) | TWI252588B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022041768A1 (zh) * | 2020-08-31 | 2022-03-03 | 无锡华润上华科技有限公司 | 分栅式闪存器件及其制备方法、电子设备 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262096B2 (en) * | 2004-01-15 | 2007-08-28 | Powerchip Semiconductor Corp. | NAND flash memory cell row and manufacturing method thereof |
US20070155092A1 (en) * | 2005-12-29 | 2007-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a tip |
KR100719382B1 (ko) * | 2006-04-10 | 2007-05-18 | 삼성전자주식회사 | 세 개의 트랜지스터들이 두 개의 셀을 구성하는 비휘발성메모리 소자 |
US7606076B2 (en) * | 2007-04-05 | 2009-10-20 | Sandisk Corporation | Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise |
US7539060B2 (en) * | 2007-04-05 | 2009-05-26 | Sandisk Corporation | Non-volatile storage using current sensing with biasing of source and P-Well |
TWI423261B (zh) * | 2009-10-27 | 2014-01-11 | Acer Inc | A method of making SONOS transistors both switch and memory |
CN102054532B (zh) * | 2009-10-30 | 2014-07-09 | 宏碁股份有限公司 | 一种使sonos电晶体兼具开关以及记忆体的方法 |
CN108122920B (zh) * | 2017-12-13 | 2019-03-26 | 武汉新芯集成电路制造有限公司 | 提高浮栅型闪存擦除效率的方法以及浮栅型闪存 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5970371A (en) | 1998-07-06 | 1999-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM |
US6165845A (en) | 1999-04-26 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Method to fabricate poly tip in split-gate flash |
JP3587100B2 (ja) | 1999-09-17 | 2004-11-10 | セイコーエプソン株式会社 | 不揮発性メモリトランジスタを含む半導体装置の製造方法 |
US6204126B1 (en) | 2000-02-18 | 2001-03-20 | Taiwan Semiconductor Manufacturing Company | Method to fabricate a new structure with multi-self-aligned for split-gate flash |
US6358820B1 (en) * | 2000-04-17 | 2002-03-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
JP3418383B2 (ja) * | 2001-05-31 | 2003-06-23 | 沖電気工業株式会社 | 半導体装置の製造方法 |
US6528844B1 (en) | 2001-10-31 | 2003-03-04 | National Semiconductor Corporation | Split-gate flash memory cell with a tip in the middle of the floating gate |
-
2003
- 2003-12-04 US US10/728,216 patent/US6916708B2/en not_active Expired - Fee Related
-
2004
- 2004-06-25 TW TW093118584A patent/TWI252588B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022041768A1 (zh) * | 2020-08-31 | 2022-03-03 | 无锡华润上华科技有限公司 | 分栅式闪存器件及其制备方法、电子设备 |
Also Published As
Publication number | Publication date |
---|---|
US6916708B2 (en) | 2005-07-12 |
US20050124115A1 (en) | 2005-06-09 |
TWI252588B (en) | 2006-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |