TW200520045A - Immersion lithography process and mask layer structure applied in the same - Google Patents

Immersion lithography process and mask layer structure applied in the same

Info

Publication number
TW200520045A
TW200520045A TW092133974A TW92133974A TW200520045A TW 200520045 A TW200520045 A TW 200520045A TW 092133974 A TW092133974 A TW 092133974A TW 92133974 A TW92133974 A TW 92133974A TW 200520045 A TW200520045 A TW 200520045A
Authority
TW
Taiwan
Prior art keywords
barrier layer
lithography process
layer
photoresist layer
same
Prior art date
Application number
TW092133974A
Other languages
Chinese (zh)
Other versions
TWI222670B (en
Inventor
Vencent Chang
George Liu
Norman Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW092133974A priority Critical patent/TWI222670B/en
Application granted granted Critical
Publication of TWI222670B publication Critical patent/TWI222670B/en
Publication of TW200520045A publication Critical patent/TW200520045A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An immersion lithography process is described as follows. A photoresist layer and a barrier layer are sequentially formed on a material layer, and then an immersion exposure step is performed to define an exposed portion and an unexposed portion in the photoresist layer. A solubilization step is conducted to solubilize the barrier layer on the exposed portion of the photoresist layer, and then a development step is conducted to remove the exposed portion of the photoresist layer and the barrier layer thereon. Since the photoresist layer is covered with the barrier layer, the chemicals in the photoresist layer do not diffuse into the immersion liquid to cause contamination. The barrier layer can be patterned simultaneously in the development step, and no extra step is required to remove the barrier layer. Therefore, the whole lithography process is not complicated.
TW092133974A 2003-12-03 2003-12-03 Immersion lithography process and mask layer structure applied in the same TWI222670B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW092133974A TWI222670B (en) 2003-12-03 2003-12-03 Immersion lithography process and mask layer structure applied in the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092133974A TWI222670B (en) 2003-12-03 2003-12-03 Immersion lithography process and mask layer structure applied in the same

Publications (2)

Publication Number Publication Date
TWI222670B TWI222670B (en) 2004-10-21
TW200520045A true TW200520045A (en) 2005-06-16

Family

ID=34546532

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092133974A TWI222670B (en) 2003-12-03 2003-12-03 Immersion lithography process and mask layer structure applied in the same

Country Status (1)

Country Link
TW (1) TWI222670B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4488890B2 (en) 2004-12-27 2010-06-23 株式会社東芝 Resist pattern forming method and semiconductor device manufacturing method
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same

Also Published As

Publication number Publication date
TWI222670B (en) 2004-10-21

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent