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Priority claimed from US11/144,857external-prioritypatent/US7807335B2/en
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Publication of TW200715063ApublicationCriticalpatent/TW200715063A/en
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure
(AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials
(AREA)
Materials For Photolithography
(AREA)
Abstract
A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering layer includes one or more polymers, one or more cation complexing agents and a casting solvent.