TW200519528A - Chromeless phase shifting mask, method to fabricate the same and method to fabricate semiconductor devices using the same - Google Patents
Chromeless phase shifting mask, method to fabricate the same and method to fabricate semiconductor devices using the sameInfo
- Publication number
- TW200519528A TW200519528A TW093123087A TW93123087A TW200519528A TW 200519528 A TW200519528 A TW 200519528A TW 093123087 A TW093123087 A TW 093123087A TW 93123087 A TW93123087 A TW 93123087A TW 200519528 A TW200519528 A TW 200519528A
- Authority
- TW
- Taiwan
- Prior art keywords
- fabricate
- same
- semiconductor devices
- shifting mask
- phase shifting
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/730,533 US20050123838A1 (en) | 2003-12-08 | 2003-12-08 | Clear field annular type phase shifting mask |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200519528A true TW200519528A (en) | 2005-06-16 |
Family
ID=34634189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093123087A TW200519528A (en) | 2003-12-08 | 2004-08-02 | Chromeless phase shifting mask, method to fabricate the same and method to fabricate semiconductor devices using the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050123838A1 (zh) |
CN (2) | CN1325994C (zh) |
TW (1) | TW200519528A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7531295B2 (en) * | 2005-03-31 | 2009-05-12 | Intel Corporation | Method and apparatus for lithographic imaging using asymmetric illumination |
US8309297B2 (en) | 2007-10-05 | 2012-11-13 | Micron Technology, Inc. | Methods of lithographically patterning a substrate |
DE102009017952B4 (de) | 2009-04-17 | 2021-08-12 | Advanced Mask Technology Center Gmbh & Co. Kg | Lithographische Maske und Verfahren zur Herstellung der lithographischen Maske |
CN102519521B (zh) * | 2011-11-30 | 2014-03-19 | 上海华力微电子有限公司 | 一种相位移焦距检测光罩及制造方法及检测焦距差的方法 |
TWI639884B (zh) * | 2017-11-23 | 2018-11-01 | Powerchip Technology Corporation | 相移式光罩及其製作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5367588A (en) * | 1992-10-29 | 1994-11-22 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Communications | Method of fabricating Bragg gratings using a silica glass phase grating mask and mask used by same |
US5240796A (en) * | 1991-07-09 | 1993-08-31 | Micron Technology, Inc. | Method of fabricating a chromeless phase shift reticle |
US5302477A (en) * | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
JP2718893B2 (ja) * | 1993-06-04 | 1998-02-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 移相マスクの移相欠陥を修復する方法 |
DE19524846B4 (de) * | 1994-07-08 | 2004-11-11 | Hyundai Electronics Industries Co., Ltd., Ichon | Verfahren zur Herstellung einer feinen, ringförmigen Ladungsspeicherelektrode in einer Halbleitervorrichtung unter Benutzung einer Phasensprungmaske |
KR0172790B1 (ko) * | 1995-09-18 | 1999-03-20 | 김영환 | 위상반전 마스크 및 그 제조방법 |
TW372283B (en) * | 1998-09-05 | 1999-10-21 | United Microelectronics Corp | Method for automatically generating annular phase shifting mask |
US6335130B1 (en) * | 2000-05-01 | 2002-01-01 | Asml Masktools Netherlands B.V. | System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features |
CN1400630A (zh) * | 2001-07-26 | 2003-03-05 | 旺宏电子股份有限公司 | 无铬相移掩膜及使用该掩膜的设备 |
US6605396B2 (en) * | 2001-08-06 | 2003-08-12 | Infineon Technologies, Ag | Resolution enhancement for alternating phase shift masks |
JP4876357B2 (ja) * | 2001-09-06 | 2012-02-15 | 大日本印刷株式会社 | 文字記号部を有する基板とその文字記号部の加工方法 |
US7056645B2 (en) * | 2002-11-27 | 2006-06-06 | Intel Corporation | Use of chromeless phase shift features to pattern large area line/space geometries |
-
2003
- 2003-12-08 US US10/730,533 patent/US20050123838A1/en not_active Abandoned
-
2004
- 2004-08-02 TW TW093123087A patent/TW200519528A/zh unknown
- 2004-12-08 CN CNB2004101006302A patent/CN1325994C/zh active Active
- 2004-12-08 CN CNU2004201174676U patent/CN2777600Y/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1627185A (zh) | 2005-06-15 |
CN1325994C (zh) | 2007-07-11 |
US20050123838A1 (en) | 2005-06-09 |
CN2777600Y (zh) | 2006-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG144908A1 (en) | Mask and method to pattern chromeless phase lithography contact hole | |
TW200610026A (en) | Decoupled complementary mask patterning transfer method | |
TW374867B (en) | Method of patterning sub-0.25 lambda line features with high transmission, "attenuated" phase shift masks | |
TW200504829A (en) | Photomask, pattern formation method using photomask and mask data creation method for photomask | |
TW200720837A (en) | Photomask blank and process for producing the same, process for producing photomask, and process for producing semiconductor device | |
AU2002349080A1 (en) | Optical proximity correction for phase shifting photolithographic masks | |
WO2007033362A3 (en) | Systems, masks, and methods for photolithography | |
TW200623233A (en) | Photomask blank and photomask | |
TW200705111A (en) | Leaky absorber for extreme ultraviolet mask | |
WO2002101466A3 (en) | Exposure control for phase shifting photolithographic masks | |
TW200638163A (en) | Phase shifting mask for equal line/space dense line patterns | |
SG144749A1 (en) | Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography | |
AU2002332489A1 (en) | Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask | |
TW200516343A (en) | Photomask, photomask manufacturing method and semiconductor device manufacturing method using photomask | |
TW200519528A (en) | Chromeless phase shifting mask, method to fabricate the same and method to fabricate semiconductor devices using the same | |
TW200515481A (en) | Photo mask, pattern formation method using the same, and mask data generation method | |
TW200606575A (en) | Levenson type phase shift mask and method of levenson type phase shift mask | |
WO2001084236A3 (en) | Method for phase shift mask design, fabrication, and use | |
TW200710694A (en) | Differential alternating phase shift mask optimization | |
TW200725167A (en) | Mask and fabrication method thereof and application thereof | |
TW200638164A (en) | Chromeless phase shifting mask for equal line/space dense line patterns | |
TW200705138A (en) | Phase shift photomask performance assurance method | |
AU2003213752A8 (en) | Patterning semiconductor layers using phase shifting and assist features | |
TW200712754A (en) | Phase shifting mask for equal line/space dense line patterns | |
TW200603253A (en) | A semiconductor manufacturing method and an exposure mask |