TW200516632A - Control method for impurity doping, and the device for impurity doping - Google Patents

Control method for impurity doping, and the device for impurity doping

Info

Publication number
TW200516632A
TW200516632A TW093127425A TW93127425A TW200516632A TW 200516632 A TW200516632 A TW 200516632A TW 093127425 A TW093127425 A TW 093127425A TW 93127425 A TW93127425 A TW 93127425A TW 200516632 A TW200516632 A TW 200516632A
Authority
TW
Taiwan
Prior art keywords
processing body
impurity
dose
impurity doping
control method
Prior art date
Application number
TW093127425A
Other languages
English (en)
Other versions
TWI377592B (zh
Inventor
Yuichiro Sasaki
Ichiro Nakayama
Tomohiro Okumura
Satoshi Maeshima
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200516632A publication Critical patent/TW200516632A/zh
Application granted granted Critical
Publication of TWI377592B publication Critical patent/TWI377592B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Thin Film Transistor (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093127425A 2003-09-12 2004-09-10 Control method for impurity doping, and the device for impurity doping TW200516632A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003321385A JP2005093518A (ja) 2003-09-12 2003-09-12 不純物導入の制御方法および不純物導入装置

Publications (2)

Publication Number Publication Date
TW200516632A true TW200516632A (en) 2005-05-16
TWI377592B TWI377592B (zh) 2012-11-21

Family

ID=34308633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127425A TW200516632A (en) 2003-09-12 2004-09-10 Control method for impurity doping, and the device for impurity doping

Country Status (4)

Country Link
US (1) US7666770B2 (zh)
JP (2) JP2005093518A (zh)
TW (1) TW200516632A (zh)
WO (1) WO2005027208A1 (zh)

Cited By (1)

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TWI459488B (zh) * 2008-03-14 2014-11-01 應用材料股份有限公司 在電漿離子佈植過程中測量摻質濃度的方法

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EP1865544A4 (en) * 2005-03-31 2010-12-22 Panasonic Corp PLASMA DOPING PROCESS AND DEVICE
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
TWI476292B (zh) * 2005-08-30 2015-03-11 尖端科技材料股份有限公司 利用選擇性氟化硼前驅物之硼離子植入方法，及供植入用之大群氫化硼之形成方法
JP4101279B2 (ja) 2006-01-31 2008-06-18 キヤノン株式会社 電子写真感光体、プロセスカートリッジおよび電子写真装置
JP5116357B2 (ja) * 2007-05-09 2013-01-09 株式会社アルバック シリコン層へのドーパント元素の導入方法、ポリシリコン太陽電池の製造方法、ポリシリコン型薄膜トランジスタの製造方法
US20090008577A1 (en) * 2007-07-07 2009-01-08 Varian Semiconductor Equipment Associates, Inc. Conformal Doping Using High Neutral Density Plasma Implant
KR100908820B1 (ko) 2007-11-01 2009-07-21 주식회사 하이닉스반도체 플라즈마 도핑 방법 및 그를 이용한 반도체 소자의제조방법
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
US8383496B2 (en) 2008-08-15 2013-02-26 Kazuhiko Tonari Plasma doping method and manufacturing method of semiconductor device
US20100048018A1 (en) * 2008-08-25 2010-02-25 Varian Semiconductor Equipment Associates, Inc. Doped Layers for Reducing Electromigration
JP2010161259A (ja) * 2009-01-09 2010-07-22 Toshiba Corp プロセスシミュレーションプログラム、プロセスシミュレーション方法、プロセスシミュレータ
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI386983B (zh) 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
CN103201824B (zh) 2010-08-30 2016-09-07 恩特格里斯公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法
US20120302048A1 (en) * 2011-05-27 2012-11-29 Applied Materials, Inc. Pre or post-implant plasma treatment for plasma immersed ion implantation process
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
KR20200098716A (ko) 2012-02-14 2020-08-20 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류
JP2013258319A (ja) * 2012-06-13 2013-12-26 Ulvac Japan Ltd 極浅接合の形成方法
SG11201601015RA (en) 2013-08-16 2016-03-30 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
JP2015213159A (ja) * 2014-05-05 2015-11-26 東京エレクトロン株式会社 プラズマ処理装置および計測方法
CN107219652B (zh) * 2017-07-21 2020-10-02 深圳市华星光电技术有限公司 一种液晶面板气泡检测系统

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Publication number Priority date Publication date Assignee Title
JP3100230B2 (ja) 1992-07-16 2000-10-16 株式会社日立製作所 半導体基板への添加物イオン注入方法
US6274459B1 (en) * 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6020592A (en) 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP2000114198A (ja) 1998-10-05 2000-04-21 Matsushita Electric Ind Co Ltd 表面処理方法および装置
JP2000332252A (ja) 1999-05-19 2000-11-30 Matsushita Electric Ind Co Ltd イオンドーピング方法および薄膜トランジスタの製造方法
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459488B (zh) * 2008-03-14 2014-11-01 應用材料股份有限公司 在電漿離子佈植過程中測量摻質濃度的方法

Also Published As

Publication number Publication date
JPWO2005027208A1 (ja) 2006-11-24
WO2005027208A1 (ja) 2005-03-24
US7666770B2 (en) 2010-02-23
US20070059848A1 (en) 2007-03-15
JP4447555B2 (ja) 2010-04-07
JP2005093518A (ja) 2005-04-07
TWI377592B (zh) 2012-11-21

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