TW200516632A - Control method for impurity doping, and the device for impurity doping - Google Patents

Control method for impurity doping, and the device for impurity doping

Info

Publication number
TW200516632A
TW200516632A TW093127425A TW93127425A TW200516632A TW 200516632 A TW200516632 A TW 200516632A TW 093127425 A TW093127425 A TW 093127425A TW 93127425 A TW93127425 A TW 93127425A TW 200516632 A TW200516632 A TW 200516632A
Authority
TW
Taiwan
Prior art keywords
processing body
impurity
dose
impurity doping
control method
Prior art date
Application number
TW093127425A
Other languages
English (en)
Other versions
TWI377592B (zh
Inventor
Yuichiro Sasaki
Ichiro Nakayama
Tomohiro Okumura
Satoshi Maeshima
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200516632A publication Critical patent/TW200516632A/zh
Application granted granted Critical
Publication of TWI377592B publication Critical patent/TWI377592B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093127425A 2003-09-12 2004-09-10 Control method for impurity doping, and the device for impurity doping TW200516632A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003321385A JP2005093518A (ja) 2003-09-12 2003-09-12 不純物導入の制御方法および不純物導入装置

Publications (2)

Publication Number Publication Date
TW200516632A true TW200516632A (en) 2005-05-16
TWI377592B TWI377592B (zh) 2012-11-21

Family

ID=34308633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127425A TW200516632A (en) 2003-09-12 2004-09-10 Control method for impurity doping, and the device for impurity doping

Country Status (4)

Country Link
US (1) US7666770B2 (zh)
JP (2) JP2005093518A (zh)
TW (1) TW200516632A (zh)
WO (1) WO2005027208A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459488B (zh) * 2008-03-14 2014-11-01 Applied Materials Inc 在電漿離子佈植過程中測量摻質濃度的方法

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KR20070115907A (ko) * 2005-03-31 2007-12-06 마쯔시다덴기산교 가부시키가이샤 플라즈마 도핑 방법 및 장치
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
JP4101279B2 (ja) 2006-01-31 2008-06-18 キヤノン株式会社 電子写真感光体、プロセスカートリッジおよび電子写真装置
JP5116357B2 (ja) * 2007-05-09 2013-01-09 株式会社アルバック シリコン層へのドーパント元素の導入方法、ポリシリコン太陽電池の製造方法、ポリシリコン型薄膜トランジスタの製造方法
US20090008577A1 (en) * 2007-07-07 2009-01-08 Varian Semiconductor Equipment Associates, Inc. Conformal Doping Using High Neutral Density Plasma Implant
KR100908820B1 (ko) 2007-11-01 2009-07-21 주식회사 하이닉스반도체 플라즈마 도핑 방법 및 그를 이용한 반도체 소자의제조방법
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
KR101580205B1 (ko) 2008-08-15 2015-12-24 가부시키가이샤 알박 플라즈마 도핑 방법 및 반도체 장치의 제조 방법
US20100048018A1 (en) * 2008-08-25 2010-02-25 Varian Semiconductor Equipment Associates, Inc. Doped Layers for Reducing Electromigration
JP2010161259A (ja) * 2009-01-09 2010-07-22 Toshiba Corp プロセスシミュレーションプログラム、プロセスシミュレーション方法、プロセスシミュレータ
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI386983B (zh) 2010-02-26 2013-02-21 Advanced Tech Materials 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
JP5908476B2 (ja) 2010-08-30 2016-04-26 インテグリス・インコーポレーテッド 固体材料から化合物又はその中間体を調製するための装置及び方法並びにそのような化合物及び中間体の使用
US20120302048A1 (en) * 2011-05-27 2012-11-29 Applied Materials, Inc. Pre or post-implant plasma treatment for plasma immersed ion implantation process
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
EP3267470A3 (en) 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
JP2013258319A (ja) * 2012-06-13 2013-12-26 Ulvac Japan Ltd 極浅接合の形成方法
SG10201801299YA (en) 2013-08-16 2018-03-28 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
JP2015213159A (ja) * 2014-05-05 2015-11-26 東京エレクトロン株式会社 プラズマ処理装置および計測方法
CN107219652B (zh) * 2017-07-21 2020-10-02 深圳市华星光电技术有限公司 一种液晶面板气泡检测系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3100230B2 (ja) * 1992-07-16 2000-10-16 株式会社日立製作所 半導体基板への添加物イオン注入方法
US6274459B1 (en) * 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6020592A (en) 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP2000114198A (ja) 1998-10-05 2000-04-21 Matsushita Electric Ind Co Ltd 表面処理方法および装置
JP2000332252A (ja) * 1999-05-19 2000-11-30 Matsushita Electric Ind Co Ltd イオンドーピング方法および薄膜トランジスタの製造方法
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459488B (zh) * 2008-03-14 2014-11-01 Applied Materials Inc 在電漿離子佈植過程中測量摻質濃度的方法

Also Published As

Publication number Publication date
JP2005093518A (ja) 2005-04-07
TWI377592B (zh) 2012-11-21
WO2005027208A1 (ja) 2005-03-24
JPWO2005027208A1 (ja) 2006-11-24
US7666770B2 (en) 2010-02-23
US20070059848A1 (en) 2007-03-15
JP4447555B2 (ja) 2010-04-07

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