TW200512057A - Electrolytic processing apparatus and electrolytic processing method - Google Patents

Electrolytic processing apparatus and electrolytic processing method

Info

Publication number
TW200512057A
TW200512057A TW093120955A TW93120955A TW200512057A TW 200512057 A TW200512057 A TW 200512057A TW 093120955 A TW093120955 A TW 093120955A TW 93120955 A TW93120955 A TW 93120955A TW 200512057 A TW200512057 A TW 200512057A
Authority
TW
Taiwan
Prior art keywords
electrolytic processing
electrode
processing
processing apparatus
feeding
Prior art date
Application number
TW093120955A
Other languages
English (en)
Inventor
Ikutaro Noji
Hozumi Yasuda
Takeshi Iizumi
Kazuto Hirokawa
Itsuki Kobata
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of TW200512057A publication Critical patent/TW200512057A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093120955A 2003-07-15 2004-07-14 Electrolytic processing apparatus and electrolytic processing method TW200512057A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003197408 2003-07-15
JP2004007123 2004-01-14

Publications (1)

Publication Number Publication Date
TW200512057A true TW200512057A (en) 2005-04-01

Family

ID=34067356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093120955A TW200512057A (en) 2003-07-15 2004-07-14 Electrolytic processing apparatus and electrolytic processing method

Country Status (6)

Country Link
US (1) US20070272562A1 (zh)
EP (1) EP1644970A4 (zh)
JP (1) JP2007528933A (zh)
KR (1) KR20060026446A (zh)
TW (1) TW200512057A (zh)
WO (1) WO2005006425A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI458579B (zh) * 2009-12-22 2014-11-01
TWI475329B (zh) * 2008-10-22 2015-03-01 尼康股份有限公司 使用多種多孔性材料來控制在多孔性材料之真空之裝置及方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792324B2 (ja) * 2006-04-12 2011-10-12 日立造船株式会社 導電性金属酸化物薄膜の除去方法及び装置
JP4966751B2 (ja) * 2007-06-06 2012-07-04 日立造船株式会社 導電性金属酸化物薄膜の除去方法及び装置
US8634055B2 (en) * 2008-10-22 2014-01-21 Nikon Corporation Apparatus and method to control vacuum at porous material using multiple porous materials
DE102019111929A1 (de) * 2019-05-08 2020-11-12 Khs Gmbh Füllmaschine und Verfahren zum Füllen von Behältern mit einem flüssigen Füllgut
JP7422586B2 (ja) 2020-03-30 2024-01-26 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3837783B2 (ja) * 1996-08-12 2006-10-25 森 勇蔵 超純水中の水酸基による加工方法
EP1139400B1 (en) * 1998-12-07 2009-03-18 Yuzo Mori Method for machining/cleaning by hydroxide ion in ultrapure water
JP2001064799A (ja) * 1999-08-27 2001-03-13 Yuzo Mori 電解加工方法及び装置
JP4141114B2 (ja) * 2000-07-05 2008-08-27 株式会社荏原製作所 電解加工方法及び装置
DE60135705D1 (de) * 2000-07-05 2008-10-23 Yuzo Mori Verfahren und Vorrichtung zum elektrochemischen Bearbeiten
TW592859B (en) * 2001-09-11 2004-06-21 Ebara Corp Electrolytic processing apparatus and method
TWI277473B (en) * 2002-01-31 2007-04-01 Ebara Corp Electrolytic processing apparatus and method, fixing method, fixing structure for ion exchanging member
JP2004255479A (ja) * 2003-02-24 2004-09-16 Ebara Corp 電解加工方法及び電解加工装置
JP2004216542A (ja) * 2002-11-20 2004-08-05 Ebara Corp 電解加工装置及び電解加工方法
JP2004209588A (ja) * 2002-12-27 2004-07-29 Ebara Corp 研磨装置及び研磨方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475329B (zh) * 2008-10-22 2015-03-01 尼康股份有限公司 使用多種多孔性材料來控制在多孔性材料之真空之裝置及方法
TWI458579B (zh) * 2009-12-22 2014-11-01

Also Published As

Publication number Publication date
WO2005006425A1 (en) 2005-01-20
US20070272562A1 (en) 2007-11-29
JP2007528933A (ja) 2007-10-18
KR20060026446A (ko) 2006-03-23
EP1644970A1 (en) 2006-04-12
EP1644970A4 (en) 2008-04-30

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