TW200511565A - SRAM cell and methods of fabrication - Google Patents

SRAM cell and methods of fabrication

Info

Publication number
TW200511565A
TW200511565A TW093126681A TW93126681A TW200511565A TW 200511565 A TW200511565 A TW 200511565A TW 093126681 A TW093126681 A TW 093126681A TW 93126681 A TW93126681 A TW 93126681A TW 200511565 A TW200511565 A TW 200511565A
Authority
TW
Taiwan
Prior art keywords
fabrication
methods
sram cell
active region
substrate
Prior art date
Application number
TW093126681A
Other languages
English (en)
Other versions
TWI247418B (en
Inventor
Wen-Chin Lee
Yee-Chia Yeo
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200511565A publication Critical patent/TW200511565A/zh
Application granted granted Critical
Publication of TWI247418B publication Critical patent/TWI247418B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
TW093126681A 2003-09-05 2004-09-03 SRAM cell and methods of fabrication TWI247418B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50042603P 2003-09-05 2003-09-05
US10/852,324 US7105908B2 (en) 2003-09-05 2004-05-24 SRAM cell having stepped boundary regions and methods of fabrication

Publications (2)

Publication Number Publication Date
TW200511565A true TW200511565A (en) 2005-03-16
TWI247418B TWI247418B (en) 2006-01-11

Family

ID=35307661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093126681A TWI247418B (en) 2003-09-05 2004-09-03 SRAM cell and methods of fabrication

Country Status (3)

Country Link
US (2) US7105908B2 (zh)
CN (2) CN100413076C (zh)
TW (1) TWI247418B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105908B2 (en) * 2003-09-05 2006-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell having stepped boundary regions and methods of fabrication
US20050167777A1 (en) * 2004-01-30 2005-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device with active layer bumper
US7681628B2 (en) * 2006-04-12 2010-03-23 International Business Machines Corporation Dynamic control of back gate bias in a FinFET SRAM cell
US20080057636A1 (en) * 2006-08-31 2008-03-06 Richard Lindsay Strained semiconductor device and method of making same
US7704823B2 (en) * 2006-08-31 2010-04-27 Infineon Technologies Ag Strained semiconductor device and method of making same
US7514317B2 (en) * 2006-08-31 2009-04-07 Infineon Technologies Ag Strained semiconductor device and method of making same
US7728392B2 (en) * 2008-01-03 2010-06-01 International Business Machines Corporation SRAM device structure including same band gap transistors having gate stacks with high-K dielectrics and same work function
JP5407192B2 (ja) 2008-06-20 2014-02-05 富士通セミコンダクター株式会社 パターン形成方法及び半導体装置
US8232179B2 (en) 2009-10-01 2012-07-31 International Business Machines Corporation Method to improve wet etch budget in FEOL integration
US7932143B1 (en) * 2009-10-22 2011-04-26 Globalfoundries Inc. Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods
CN102376622A (zh) * 2010-08-12 2012-03-14 中芯国际集成电路制造(上海)有限公司 避免介质层中出现空洞的方法
US8680644B2 (en) * 2011-04-11 2014-03-25 International Business Machines Coroporation Semiconductor device and method for making same
CN102412263B (zh) * 2011-09-15 2013-06-12 上海华力微电子有限公司 具有金属前介质填充结构的半导体器件及其制备方法
US8823149B2 (en) 2012-12-11 2014-09-02 Globalfoundries Inc. Contact landing pads for a semiconductor device and methods of making same
US8859388B2 (en) * 2012-07-13 2014-10-14 International Business Machines Corporation Sealed shallow trench isolation region
US9362272B2 (en) 2012-11-01 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral MOSFET
US8956928B2 (en) 2012-11-30 2015-02-17 Globalfoundries Inc Contact structure for a semiconductor device and methods of making same
KR102008744B1 (ko) 2012-12-13 2019-08-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9991124B2 (en) * 2015-01-20 2018-06-05 Taiwan Semiconductor Manufacturing Company Ltd. Metal gate and manufacturing method thereof
US10269822B2 (en) * 2015-12-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate uniform tunneling dielectric of embedded flash memory cell
US9698043B1 (en) 2016-05-20 2017-07-04 International Business Machines Corporation Shallow trench isolation for semiconductor devices
US10388654B2 (en) 2018-01-11 2019-08-20 Globalfoundries Inc. Methods of forming a gate-to-source/drain contact structure
CN115700902A (zh) * 2021-07-21 2023-02-07 长鑫存储技术有限公司 一种接触结构的形成方法、接触结构及半导体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902558A (en) * 1982-03-12 1990-02-20 Henriksen Henning R Method for protecting skin from hazardous chemicals
US5275965A (en) * 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
US5511246A (en) * 1994-07-29 1996-04-30 Vallen Safety Supply Company Low lint protective garment
KR0151049B1 (ko) * 1995-05-29 1998-12-01 김광호 반도체장치의 소자분리방법
US5622764A (en) * 1995-06-07 1997-04-22 Minnesota Mining And Manufacturing Company Sterilization indicators and methods
KR100256056B1 (ko) * 1997-09-08 2000-05-01 윤종용 반도체 장치의 콘택 플러그 형성 방법
TW366559B (en) * 1998-04-27 1999-08-11 United Microelectronics Corp Manufacturing method of shallow trench isolation structure
US6352897B1 (en) * 1999-06-09 2002-03-05 United Microelectronics Corp. Method of improving edge recess problem of shallow trench isolation
ATE468768T1 (de) * 1999-07-27 2010-06-15 Claude Q C Hayes Wärmeschutzschicht
US6391720B1 (en) * 2000-09-27 2002-05-21 Chartered Semiconductor Manufacturing Ltd. Process flow for a performance enhanced MOSFET with self-aligned, recessed channel
JP2002359298A (ja) * 2001-05-31 2002-12-13 Mitsubishi Electric Corp 半導体記憶装置
US6461887B1 (en) * 2002-01-03 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form an inverted staircase STI structure by etch-deposition-etch and selective epitaxial growth
US6638813B1 (en) * 2002-01-29 2003-10-28 Taiwan Semiconductor Manufacturing Company Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell
JP2003229568A (ja) * 2002-02-04 2003-08-15 Hitachi Ltd 半導体装置の製造方法および半導体装置
US6670279B1 (en) 2002-02-05 2003-12-30 Taiwan Semiconductor Manufacturing Company Method of forming shallow trench isolation with rounded corners and divot-free by using in-situ formed spacers
JP4030383B2 (ja) * 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7105908B2 (en) * 2003-09-05 2006-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell having stepped boundary regions and methods of fabrication

Also Published As

Publication number Publication date
CN100413076C (zh) 2008-08-20
US7807546B2 (en) 2010-10-05
US7105908B2 (en) 2006-09-12
TWI247418B (en) 2006-01-11
US20060252227A1 (en) 2006-11-09
US20050051867A1 (en) 2005-03-10
CN1684262A (zh) 2005-10-19
CN2736934Y (zh) 2005-10-26

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