TW200509275A - Shallow trench isolation void detecting method and structure for the same - Google Patents

Shallow trench isolation void detecting method and structure for the same

Info

Publication number
TW200509275A
TW200509275A TW092123507A TW92123507A TW200509275A TW 200509275 A TW200509275 A TW 200509275A TW 092123507 A TW092123507 A TW 092123507A TW 92123507 A TW92123507 A TW 92123507A TW 200509275 A TW200509275 A TW 200509275A
Authority
TW
Taiwan
Prior art keywords
active areas
wafer
same
void
trench isolation
Prior art date
Application number
TW092123507A
Other languages
Chinese (zh)
Other versions
TWI237862B (en
Inventor
Ping Hsu
Yi-Nan Chen
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW92123507A priority Critical patent/TWI237862B/en
Publication of TW200509275A publication Critical patent/TW200509275A/en
Application granted granted Critical
Publication of TWI237862B publication Critical patent/TWI237862B/en

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Element Separation (AREA)

Abstract

Disclosed is a method for detecting STI void of a semiconductor wafer. The method of the present invention comprises steps of assigning a detecting area in a predetermined region of the wafer; forming active areas and gate strips crossing the active areas by the process synchronized with that for other regions of the wafer. Dielectric material is filled between the active areas. The adjacent portion between the active areas reaches a predetermined length at least. The electrical value of the gate strips is measured to determine whether there is any void in the dielectric filled between the active areas, thereby to derive whether there is any void generated in the STI between the active areas of the other regions of the wafer.
TW92123507A 2003-08-27 2003-08-27 Shallow trench isolation void detecting method and structure for the same TWI237862B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92123507A TWI237862B (en) 2003-08-27 2003-08-27 Shallow trench isolation void detecting method and structure for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92123507A TWI237862B (en) 2003-08-27 2003-08-27 Shallow trench isolation void detecting method and structure for the same

Publications (2)

Publication Number Publication Date
TW200509275A true TW200509275A (en) 2005-03-01
TWI237862B TWI237862B (en) 2005-08-11

Family

ID=36929974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92123507A TWI237862B (en) 2003-08-27 2003-08-27 Shallow trench isolation void detecting method and structure for the same

Country Status (1)

Country Link
TW (1) TWI237862B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103822948A (en) * 2014-03-06 2014-05-28 上海华虹宏力半导体制造有限公司 Testing method for semiconductor
CN104112685A (en) * 2013-04-22 2014-10-22 无锡华润上华科技有限公司 Method for detecting voids in shallow trench isolation region
CN110887877A (en) * 2019-11-22 2020-03-17 中国人民解放军国防科技大学 Railway contact line defect detection sensor and detection method
CN112599436A (en) * 2020-12-10 2021-04-02 泉芯集成电路制造(济南)有限公司 Transistor and STI abnormal hole detection method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104112685A (en) * 2013-04-22 2014-10-22 无锡华润上华科技有限公司 Method for detecting voids in shallow trench isolation region
CN103822948A (en) * 2014-03-06 2014-05-28 上海华虹宏力半导体制造有限公司 Testing method for semiconductor
CN103822948B (en) * 2014-03-06 2016-06-08 上海华虹宏力半导体制造有限公司 The testing method of semiconducter device
CN110887877A (en) * 2019-11-22 2020-03-17 中国人民解放军国防科技大学 Railway contact line defect detection sensor and detection method
CN112599436A (en) * 2020-12-10 2021-04-02 泉芯集成电路制造(济南)有限公司 Transistor and STI abnormal hole detection method

Also Published As

Publication number Publication date
TWI237862B (en) 2005-08-11

Similar Documents

Publication Publication Date Title
CN100514676C (en) Strained channel mos device
EP1291907A3 (en) Method of making high-voltage semiconductor devices
KR101706429B1 (en) Germanium profile for channel strain
TW200603384A (en) Integrated circuit devices including a dual gate stack structure and methods of forming the same
TW200644169A (en) Methods of forming recessed access devices associated with semiconductor constructions
TW200746317A (en) Method of forming a semiconductor device and semiconductor device
WO2001050535A3 (en) Field effect transistor structure with partially isolated source/drain junctions and methods of making same
JP2005094012A (en) Method of manufacturing dmos transistor on semiconductor substrate
SG126734A1 (en) Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices
US20050247930A1 (en) Shallow trench isolation void detecting method and structure for the same
TWI256124B (en) Electrostatic discharge protection device and method of manufacturing the same
CN106531794A (en) High-voltage metal oxide semiconductor transistor element and manufacturing method
TW200608459A (en) Method for fabricating semiconductor device and semiconductor device
TW200634977A (en) Method of forming transistor using step sti profile in memory device
TW340960B (en) Process for forming deep trench drams with sub-groundrule gates
TW356601B (en) Method for making memory cell of self-aligning field plate and structure of the same
TW200520146A (en) Method for forming a semiconductor device having isolation regions
CN106024600A (en) Short-channel nfet device
TW200509275A (en) Shallow trench isolation void detecting method and structure for the same
TW200733296A (en) Semiconductor device including shallow trench isolator and method of forming same
KR100364815B1 (en) High voltage device and fabricating method thereof
CN102142383A (en) Method for detecting positions of wells
CN103985633A (en) Preparation method of PMOS transistor
CN101908560B (en) Semiconductor element and manufacturing method thereof
TW200512886A (en) Method for forming isolation zone of vertical dynamic random access memory cell

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent