TW200509275A - Shallow trench isolation void detecting method and structure for the same - Google Patents
Shallow trench isolation void detecting method and structure for the sameInfo
- Publication number
- TW200509275A TW200509275A TW092123507A TW92123507A TW200509275A TW 200509275 A TW200509275 A TW 200509275A TW 092123507 A TW092123507 A TW 092123507A TW 92123507 A TW92123507 A TW 92123507A TW 200509275 A TW200509275 A TW 200509275A
- Authority
- TW
- Taiwan
- Prior art keywords
- active areas
- wafer
- same
- void
- trench isolation
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Element Separation (AREA)
Abstract
Disclosed is a method for detecting STI void of a semiconductor wafer. The method of the present invention comprises steps of assigning a detecting area in a predetermined region of the wafer; forming active areas and gate strips crossing the active areas by the process synchronized with that for other regions of the wafer. Dielectric material is filled between the active areas. The adjacent portion between the active areas reaches a predetermined length at least. The electrical value of the gate strips is measured to determine whether there is any void in the dielectric filled between the active areas, thereby to derive whether there is any void generated in the STI between the active areas of the other regions of the wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92123507A TWI237862B (en) | 2003-08-27 | 2003-08-27 | Shallow trench isolation void detecting method and structure for the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92123507A TWI237862B (en) | 2003-08-27 | 2003-08-27 | Shallow trench isolation void detecting method and structure for the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200509275A true TW200509275A (en) | 2005-03-01 |
TWI237862B TWI237862B (en) | 2005-08-11 |
Family
ID=36929974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92123507A TWI237862B (en) | 2003-08-27 | 2003-08-27 | Shallow trench isolation void detecting method and structure for the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI237862B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103822948A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | Testing method for semiconductor |
CN104112685A (en) * | 2013-04-22 | 2014-10-22 | 无锡华润上华科技有限公司 | Method for detecting voids in shallow trench isolation region |
CN110887877A (en) * | 2019-11-22 | 2020-03-17 | 中国人民解放军国防科技大学 | Railway contact line defect detection sensor and detection method |
CN112599436A (en) * | 2020-12-10 | 2021-04-02 | 泉芯集成电路制造(济南)有限公司 | Transistor and STI abnormal hole detection method |
-
2003
- 2003-08-27 TW TW92123507A patent/TWI237862B/en not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104112685A (en) * | 2013-04-22 | 2014-10-22 | 无锡华润上华科技有限公司 | Method for detecting voids in shallow trench isolation region |
CN103822948A (en) * | 2014-03-06 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | Testing method for semiconductor |
CN103822948B (en) * | 2014-03-06 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | The testing method of semiconducter device |
CN110887877A (en) * | 2019-11-22 | 2020-03-17 | 中国人民解放军国防科技大学 | Railway contact line defect detection sensor and detection method |
CN112599436A (en) * | 2020-12-10 | 2021-04-02 | 泉芯集成电路制造(济南)有限公司 | Transistor and STI abnormal hole detection method |
Also Published As
Publication number | Publication date |
---|---|
TWI237862B (en) | 2005-08-11 |
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