TW200509225A - Group III nitride crystal and method for producing the same - Google Patents

Group III nitride crystal and method for producing the same

Info

Publication number
TW200509225A
TW200509225A TW093115833A TW93115833A TW200509225A TW 200509225 A TW200509225 A TW 200509225A TW 093115833 A TW093115833 A TW 093115833A TW 93115833 A TW93115833 A TW 93115833A TW 200509225 A TW200509225 A TW 200509225A
Authority
TW
Taiwan
Prior art keywords
group iii
iii nitride
nitride crystal
film
metallic
Prior art date
Application number
TW093115833A
Other languages
English (en)
Inventor
Seiji Nakahata
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200509225A publication Critical patent/TW200509225A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
TW093115833A 2003-06-10 2004-06-02 Group III nitride crystal and method for producing the same TW200509225A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003165083A JP2005005378A (ja) 2003-06-10 2003-06-10 Ｉｉｉ族窒化物結晶およびその製造方法

Publications (1)

Publication Number Publication Date
TW200509225A true TW200509225A (en) 2005-03-01

Family

ID=33549200

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115833A TW200509225A (en) 2003-06-10 2004-06-02 Group III nitride crystal and method for producing the same

Country Status (6)

Country Link
US (1) US20050257733A1 (zh)
EP (1) EP1523033A1 (zh)
JP (1) JP2005005378A (zh)
CN (1) CN1701415A (zh)
TW (1) TW200509225A (zh)
WO (1) WO2004112112A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4932121B2 (ja) * 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
JP2007042843A (ja) * 2005-08-03 2007-02-15 Furukawa Co Ltd Ａｌ含有窒化物のハイドライド気相成長装置およびＡｌ含有窒化物半導体基板の製造方法ならびにＡｌ含有窒化物半導体基板
JP5005266B2 (ja) * 2006-03-02 2012-08-22 日本碍子株式会社 ＡｌＮ結晶の作製方法およびＡｌＮ厚膜
JP5287240B2 (ja) 2006-03-29 2013-09-11 富士通株式会社 多結晶ＳｉＣ基板を有する化合物半導体ウエハの製造方法
US7879697B2 (en) 2006-06-05 2011-02-01 Regents Of The University Of Minnesota Growth of low dislocation density Group-III nitrides and related thin-film structures
CN101473075B (zh) * 2006-06-20 2012-09-05 住友电气工业株式会社 AlxGa1-xN晶体的生长方法和AlxGa1-xN晶体衬底
JP5060875B2 (ja) * 2007-08-28 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体とその製造方法
JPWO2009090821A1 (ja) * 2008-01-16 2011-05-26 国立大学法人東京農工大学 Ａｌ系ＩＩＩ族窒化物単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いたＡｌ系ＩＩＩ族窒化物単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
KR101358541B1 (ko) * 2008-12-26 2014-02-05 도와 일렉트로닉스 가부시키가이샤 Ⅲ족질화물 반도체 성장용 기판, ⅲ족질화물 반도체 에피택셜 기판, ⅲ족질화물 반도체소자 및 ⅲ족질화물 반도체 자립 기판, 및, 이들의 제조 방법
JP4513927B1 (ja) * 2009-09-30 2010-07-28 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5365454B2 (ja) 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
CN103311391B (zh) * 2012-03-06 2016-07-20 展晶科技(深圳)有限公司 发光二极管晶粒及其制作方法
CN107275187B (zh) * 2017-06-26 2020-06-05 镓特半导体科技（上海）有限公司 自支撑氮化镓层及其制备方法、退火方法
CN111128686A (zh) * 2019-12-30 2020-05-08 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法
JP7478826B2 (ja) * 2020-01-16 2024-05-07 エスエルティー テクノロジーズ インコーポレイテッド 高品質ｉｉｉ族金属窒化物種結晶およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3788104B2 (ja) * 1998-05-28 2006-06-21 住友電気工業株式会社 窒化ガリウム単結晶基板及びその製造方法
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP3886341B2 (ja) * 2001-05-21 2007-02-28 日本電気株式会社 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板

Also Published As

Publication number Publication date
EP1523033A1 (en) 2005-04-13
JP2005005378A (ja) 2005-01-06
WO2004112112A1 (ja) 2004-12-23
CN1701415A (zh) 2005-11-23
US20050257733A1 (en) 2005-11-24

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