TW200509194A - Plasma chamber having multiple RF source frequencies - Google Patents
Plasma chamber having multiple RF source frequenciesInfo
- Publication number
- TW200509194A TW200509194A TW093123447A TW93123447A TW200509194A TW 200509194 A TW200509194 A TW 200509194A TW 093123447 A TW093123447 A TW 093123447A TW 93123447 A TW93123447 A TW 93123447A TW 200509194 A TW200509194 A TW 200509194A
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- plasma chamber
- electrode
- source frequencies
- capacitance
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000003319 supportive effect Effects 0.000 abstract 1
- 230000002459 sustained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49552303P | 2003-08-15 | 2003-08-15 | |
US10/890,034 US20050106873A1 (en) | 2003-08-15 | 2004-07-12 | Plasma chamber having multiple RF source frequencies |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200509194A true TW200509194A (en) | 2005-03-01 |
TWI370481B TWI370481B (en) | 2012-08-11 |
Family
ID=34576551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093123447A TWI370481B (en) | 2003-08-15 | 2004-08-05 | Plasma chamber having multiple rf source frequencies |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050106873A1 (zh) |
KR (1) | KR100849709B1 (zh) |
CN (1) | CN100392800C (zh) |
TW (1) | TWI370481B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100898975B1 (ko) * | 2005-08-01 | 2009-05-25 | 주식회사 에이디피엔지니어링 | 플라즈마 처리방법 |
CN100362619C (zh) | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
CN100389225C (zh) * | 2005-10-21 | 2008-05-21 | 友达光电股份有限公司 | 等离子体反应腔 |
US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
US8236144B2 (en) * | 2007-09-21 | 2012-08-07 | Rf Thummim Technologies, Inc. | Method and apparatus for multiple resonant structure process and reaction chamber |
US7777500B2 (en) * | 2007-10-05 | 2010-08-17 | Lam Research Corporation | Methods for characterizing dielectric properties of parts |
US8834684B2 (en) | 2009-04-14 | 2014-09-16 | Rf Thummin Technologies, Inc. | Method and apparatus for excitation of resonances in molecules |
WO2011116187A1 (en) | 2010-03-17 | 2011-09-22 | Rf Thummim Technologies, Inc. | Method and apparatus for electromagnetically producing a disturbance in a medium with simultaneous resonance of acoustic waves created by the disturbance |
CN102686004B (zh) * | 2011-03-17 | 2015-05-13 | 中微半导体设备(上海)有限公司 | 用于等离子体发生器的可控制谐波的射频系统 |
CN103014660B (zh) * | 2012-12-14 | 2015-06-10 | 广东志成冠军集团有限公司 | Pecvd镀膜装置及其射频电源与真空腔体的连接装置 |
EP3032565A1 (en) * | 2014-12-08 | 2016-06-15 | Soleras Advanced Coatings bvba | A device having two end blocks, an assembly and a sputter system comprising same, and a method of providing RF power to a target tube using said device or assembly |
CN111199860A (zh) * | 2018-11-20 | 2020-05-26 | 江苏鲁汶仪器有限公司 | 一种刻蚀均匀性调节装置及方法 |
KR20200130041A (ko) * | 2019-05-07 | 2020-11-18 | 램 리써치 코포레이션 | 폐루프 다중 출력 rf 매칭 |
KR20220106820A (ko) | 2019-12-02 | 2022-07-29 | 램 리써치 코포레이션 | Rf (radio-frequency) 보조된 플라즈마 생성시 임피던스 변환 |
US11994542B2 (en) | 2020-03-27 | 2024-05-28 | Lam Research Corporation | RF signal parameter measurement in an integrated circuit fabrication chamber |
US11784028B2 (en) * | 2020-12-24 | 2023-10-10 | Applied Materials, Inc. | Performing radio frequency matching control using a model-based digital twin |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2548321B1 (fr) * | 1983-06-29 | 1988-07-22 | Teves Gmbh Alfred | Agencement cylindre-piston pour frein, a piston au moins partiellement en ceramique |
US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
US4883549A (en) * | 1988-12-06 | 1989-11-28 | Kimberly-Clark Corporation | Method of attaching a composite elastic material to an article |
US5556501A (en) * | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
JPH04901A (ja) * | 1990-04-18 | 1992-01-06 | Mitsubishi Electric Corp | プラズマ装置の高周波給電方法及び装置 |
US5065118A (en) * | 1990-07-26 | 1991-11-12 | Applied Materials, Inc. | Electronically tuned VHF/UHF matching network |
US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5126778A (en) * | 1991-07-16 | 1992-06-30 | Eastman Kodak Company | Dedicated photographic flash system for varying flash spread based upon camera-to-subject distance |
KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
JP2654340B2 (ja) * | 1993-11-11 | 1997-09-17 | 株式会社フロンテック | 基板表面電位測定方法及びプラズマ装置 |
US5512130A (en) * | 1994-03-09 | 1996-04-30 | Texas Instruments Incorporated | Method and apparatus of etching a clean trench in a semiconductor material |
DE69509046T2 (de) * | 1994-11-30 | 1999-10-21 | Applied Materials Inc | Plasmareaktoren zur Behandlung von Halbleiterscheiben |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JP3119172B2 (ja) * | 1995-09-13 | 2000-12-18 | 日新電機株式会社 | プラズマcvd法及び装置 |
JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
US5817534A (en) * | 1995-12-04 | 1998-10-06 | Applied Materials, Inc. | RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers |
US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
US6500314B1 (en) * | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
JP3220383B2 (ja) * | 1996-07-23 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
US5807785A (en) | 1996-08-02 | 1998-09-15 | Applied Materials, Inc. | Low dielectric constant silicon dioxide sandwich layer |
US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
US6126778A (en) * | 1998-07-22 | 2000-10-03 | Micron Technology, Inc. | Beat frequency modulation for plasma generation |
US5985375A (en) * | 1998-09-03 | 1999-11-16 | Micron Technology, Inc. | Method for pulsed-plasma enhanced vapor deposition |
US6642149B2 (en) * | 1998-09-16 | 2003-11-04 | Tokyo Electron Limited | Plasma processing method |
US6222718B1 (en) * | 1998-11-12 | 2001-04-24 | Lam Research Corporation | Integrated power modules for plasma processing systems |
US6193855B1 (en) * | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US6528751B1 (en) * | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
US6506289B2 (en) * | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
US6706138B2 (en) * | 2001-08-16 | 2004-03-16 | Applied Materials Inc. | Adjustable dual frequency voltage dividing plasma reactor |
US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
TWI241868B (en) * | 2002-02-06 | 2005-10-11 | Matsushita Electric Ind Co Ltd | Plasma processing method and apparatus |
US7169255B2 (en) * | 2002-02-15 | 2007-01-30 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
US7431857B2 (en) * | 2003-08-15 | 2008-10-07 | Applied Materials, Inc. | Plasma generation and control using a dual frequency RF source |
US7838430B2 (en) * | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
-
2004
- 2004-07-12 US US10/890,034 patent/US20050106873A1/en not_active Abandoned
- 2004-08-05 TW TW093123447A patent/TWI370481B/zh not_active IP Right Cessation
- 2004-08-12 CN CNB2004100551922A patent/CN100392800C/zh not_active Expired - Fee Related
- 2004-08-12 KR KR1020040063637A patent/KR100849709B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100392800C (zh) | 2008-06-04 |
KR20050016238A (ko) | 2005-02-21 |
TWI370481B (en) | 2012-08-11 |
KR100849709B1 (ko) | 2008-08-01 |
CN1619767A (zh) | 2005-05-25 |
US20050106873A1 (en) | 2005-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200509194A (en) | Plasma chamber having multiple RF source frequencies | |
WO2001071765A3 (en) | Plasma reactor with overhead rf electrode tuned to the plasma | |
WO2009006072A3 (en) | Methods and arrangements for plasma processing system with tunable capacitance | |
TW200614368A (en) | Plasma processing device amd method | |
DE602004032334D1 (de) | Antenne zur erzeugung gleichförmiger prozessraten | |
TW200802596A (en) | Plasma processing method and plasma processing apparatus | |
WO2004107394A3 (ja) | プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 | |
TWI267138B (en) | Plasma processing apparatus and plasma processing method | |
WO2004102638A3 (en) | Rf pulsing of a narrow gap capacitively coupled reactor | |
WO2006026110A3 (en) | Yttria insulator ring for use inside a plasma chamber | |
TW200802598A (en) | Plasma processing apparatus and plasma processing method | |
WO2010122459A3 (en) | Method and apparatus for high aspect ratio dielectric etch | |
ATE430376T1 (de) | Plasmareaktor zur behandlung von grossflächigen substraten | |
WO2007095388A3 (en) | Plasma processing reactor with multiple capacitive and inductive power sources | |
TW200802597A (en) | Plasma processing apparatus and plasma processing method | |
TWI346145B (en) | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates | |
WO2008005756A3 (en) | Apparatus for substrate processing and methods therefor | |
CN201465987U (zh) | 等离子体处理装置 | |
TW200509247A (en) | Surface wave plasma treatment apparatus using multi-slot antenna | |
TW200520012A (en) | Multiple frequency plasma etch reactor | |
JP2007266533A5 (zh) | ||
WO2001045134A3 (en) | Method and apparatus for producing uniform process rates | |
TW200704289A (en) | Plasma generation and control using dual frequency RF signals | |
TW200507039A (en) | Plasma generation and control using a dual frequency RF source | |
TW200644117A (en) | Plasma processing apparatus and plasma processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |