TW200507286A - Three dimensional radiation conversion semiconductor devices - Google Patents

Three dimensional radiation conversion semiconductor devices

Info

Publication number
TW200507286A
TW200507286A TW093101741A TW93101741A TW200507286A TW 200507286 A TW200507286 A TW 200507286A TW 093101741 A TW093101741 A TW 093101741A TW 93101741 A TW93101741 A TW 93101741A TW 200507286 A TW200507286 A TW 200507286A
Authority
TW
Taiwan
Prior art keywords
semiconductor devices
junction
radiation conversion
conversion semiconductor
dimensional radiation
Prior art date
Application number
TW093101741A
Other languages
English (en)
Inventor
Glenn Saunders
Partha Dutta
Original Assignee
Rensselaer Polytech Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst filed Critical Rensselaer Polytech Inst
Publication of TW200507286A publication Critical patent/TW200507286A/zh

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Photovoltaic Devices (AREA)
TW093101741A 2003-01-21 2004-01-27 Three dimensional radiation conversion semiconductor devices TW200507286A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44075303P 2003-01-21 2003-01-21

Publications (1)

Publication Number Publication Date
TW200507286A true TW200507286A (en) 2005-02-16

Family

ID=32825141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093101741A TW200507286A (en) 2003-01-21 2004-01-27 Three dimensional radiation conversion semiconductor devices

Country Status (2)

Country Link
TW (1) TW200507286A (zh)
WO (1) WO2004068548A2 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663288B2 (en) 2005-08-25 2010-02-16 Cornell Research Foundation, Inc. Betavoltaic cell
CN101552295A (zh) 2008-04-03 2009-10-07 清华大学 太阳能电池
CN101527327B (zh) * 2008-03-07 2012-09-19 清华大学 太阳能电池
CN101562204B (zh) 2008-04-18 2011-03-23 鸿富锦精密工业（深圳）有限公司 太阳能电池
CN101562203B (zh) * 2008-04-18 2014-07-09 清华大学 太阳能电池
EP2099075B1 (en) * 2008-03-07 2015-09-09 Tsing Hua University Photovoltaic device
US8143143B2 (en) 2008-04-14 2012-03-27 Bandgap Engineering Inc. Process for fabricating nanowire arrays
RU2608313C2 (ru) * 2015-05-14 2017-01-17 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Высоковольтный преобразователь ионизирующих излучений и способ его изготовления
CN106898663A (zh) * 2017-02-23 2017-06-27 京东方科技集团股份有限公司 一种太阳能电池、太阳能电池的制作方法及用电设备
US11081252B2 (en) * 2019-03-27 2021-08-03 The United States Of America As Represented By The Secretary Of The Army Electrophoretic deposition (EPD) of radioisotope and phosphor composite layer for hybrid radioisotope batteries and radioluminescent surfaces

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US5383976A (en) * 1992-06-30 1995-01-24 Jx Crystals, Inc. Compact DC/AC electric power generator using convective liquid cooled low bandgap thermophotovoltaic cell strings and regenerative hydrocarbon burner

Also Published As

Publication number Publication date
WO2004068548A3 (en) 2004-09-23
WO2004068548A2 (en) 2004-08-12

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