TW200507281A - Two mask Shottky barrier diode with LOGOS structure - Google Patents
Two mask Shottky barrier diode with LOGOS structureInfo
- Publication number
- TW200507281A TW200507281A TW092121185A TW92121185A TW200507281A TW 200507281 A TW200507281 A TW 200507281A TW 092121185 A TW092121185 A TW 092121185A TW 92121185 A TW92121185 A TW 92121185A TW 200507281 A TW200507281 A TW 200507281A
- Authority
- TW
- Taiwan
- Prior art keywords
- regions
- doped
- layer formed
- field oxide
- logos
- Prior art date
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- Electrodes Of Semiconductors (AREA)
Abstract
A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device including a LOGOS structure and two p doped regions, which are positioned one above another therein to isolate cells so as to avoid premature of breakdown. The Schottky rectifier device comprises: an n-drift layer formed on an n+substrate; a cathode metal layer formed on a surface of the n+substrate opposite the n-drift layer; a pair of field oxide regions and termination region formed into the n-drift layer and each is spaced from each other by the mesas, where the mesas have metal silicide layer formed thereon. A top metal layer formed on the field oxide regions and termination region and contact with the silicide layer. Under each of field oxide regions and termination region is a p-doped and p-doped region cascade which provide depleted regions enclosed the p-doped regions to block the leakage current while a reverse bias voltage is exerted to the Schottky power rectifier diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92121185A TWI226709B (en) | 2003-08-01 | 2003-08-01 | Two mask Schottky barrier diode with LOCOS structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92121185A TWI226709B (en) | 2003-08-01 | 2003-08-01 | Two mask Schottky barrier diode with LOCOS structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI226709B TWI226709B (en) | 2005-01-11 |
| TW200507281A true TW200507281A (en) | 2005-02-16 |
Family
ID=35634299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92121185A TWI226709B (en) | 2003-08-01 | 2003-08-01 | Two mask Schottky barrier diode with LOCOS structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI226709B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4743447B2 (en) | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | Semiconductor device |
| TWI743818B (en) * | 2020-06-02 | 2021-10-21 | 台灣半導體股份有限公司 | Schottky diode with multiple guard ring structures |
-
2003
- 2003-08-01 TW TW92121185A patent/TWI226709B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI226709B (en) | 2005-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |