TW200506527A - Acrylic polymers and radiation-sensitive resin compositions - Google Patents

Acrylic polymers and radiation-sensitive resin compositions

Info

Publication number
TW200506527A
TW200506527A TW093123523A TW93123523A TW200506527A TW 200506527 A TW200506527 A TW 200506527A TW 093123523 A TW093123523 A TW 093123523A TW 93123523 A TW93123523 A TW 93123523A TW 200506527 A TW200506527 A TW 200506527A
Authority
TW
Taiwan
Prior art keywords
linear
units
general formula
branched alkyl
hydrogen
Prior art date
Application number
TW093123523A
Other languages
English (en)
Other versions
TWI351579B (zh
Inventor
Kouichi Fujiwara
Hiroshi Yamaguchi
Atsushi Nakamura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200506527A publication Critical patent/TW200506527A/zh
Application granted granted Critical
Publication of TWI351579B publication Critical patent/TWI351579B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/22Esters containing halogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW093123523A 2003-08-05 2004-08-05 Acrylic polymers and radiation-sensitive resin compositions TW200506527A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003286389 2003-08-05

Publications (2)

Publication Number Publication Date
TW200506527A true TW200506527A (en) 2005-02-16
TWI351579B TWI351579B (zh) 2011-11-01

Family

ID=34113954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123523A TW200506527A (en) 2003-08-05 2004-08-05 Acrylic polymers and radiation-sensitive resin compositions

Country Status (9)

Country Link
US (1) US7704669B2 (zh)
EP (1) EP1652866B1 (zh)
JP (1) JP4765625B2 (zh)
KR (1) KR101109798B1 (zh)
CN (1) CN100374475C (zh)
AT (1) ATE418570T1 (zh)
DE (1) DE602004018648D1 (zh)
TW (1) TW200506527A (zh)
WO (1) WO2005012374A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI477909B (zh) 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
CN101395189B (zh) * 2006-03-31 2013-07-17 Jsr株式会社 含氟聚合物及其精制方法以及感放射线性树脂组合物
US8637623B2 (en) * 2008-02-25 2014-01-28 Daicel Chemical Industries, Ltd. Monomer having electron-withdrawing substituent and lactone skeleton, polymeric compound, and photoresist composition
JP5427447B2 (ja) * 2008-03-28 2014-02-26 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5287065B2 (ja) * 2008-09-12 2013-09-11 Jsr株式会社 感放射線性樹脂組成物
KR101706409B1 (ko) * 2009-09-30 2017-02-13 제이에스알 가부시끼가이샤 중합체, 감방사선성 조성물 및 단량체, 및 그의 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910122A (en) * 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
DE69214035T2 (de) 1991-06-28 1997-04-10 Ibm Reflexionsverminderde Überzüge
JPH0612452A (ja) 1992-06-25 1994-01-21 Hitachi Ltd グループ情報アクセス方式
KR100354871B1 (ko) * 1997-12-31 2003-03-10 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
JP3821211B2 (ja) * 2000-03-21 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
TW546545B (en) * 2000-03-21 2003-08-11 Shinetsu Chemical Co Resist compositions and patterning process
JP4768152B2 (ja) 2000-09-01 2011-09-07 ダイセル化学工業株式会社 フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP2002201232A (ja) 2000-10-27 2002-07-19 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
JP2002145934A (ja) * 2000-11-08 2002-05-22 Daicel Chem Ind Ltd フォトレジスト用樹脂とその製造方法、及びフォトレジスト組成物
US6838225B2 (en) * 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition
KR100907268B1 (ko) * 2001-04-05 2009-07-13 후지필름 가부시키가이샤 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
JP4149148B2 (ja) * 2001-08-03 2008-09-10 富士フイルム株式会社 ポジ型レジスト組成物
JP4727092B2 (ja) * 2001-09-10 2011-07-20 東京応化工業株式会社 化学増幅型レジスト組成物
JP4420169B2 (ja) * 2001-09-12 2010-02-24 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP3895224B2 (ja) * 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP3855770B2 (ja) * 2001-12-28 2006-12-13 Jsr株式会社 感放射線性樹脂組成物
JP3963724B2 (ja) 2002-01-10 2007-08-22 ダイセル化学工業株式会社 フォトレジスト用高分子化合物の製造方法、及びフォトレジスト用樹脂組成物
JP4345326B2 (ja) * 2002-03-15 2009-10-14 Jsr株式会社 感放射線性樹脂組成物
JP3900135B2 (ja) * 2002-10-29 2007-04-04 Jsr株式会社 感放射線性樹脂組成物
JP4134685B2 (ja) * 2002-11-05 2008-08-20 Jsr株式会社 感放射線性樹脂組成物
JP2004220009A (ja) * 2002-12-28 2004-08-05 Jsr Corp 感放射線性樹脂組成物
JP4110398B2 (ja) * 2003-03-07 2008-07-02 信越化学工業株式会社 α位メチル基に酸素置換基を有する脂環含有メタクリレート化合物
US7279265B2 (en) * 2003-03-27 2007-10-09 Fujifilm Corporation Positive resist composition and pattern formation method using the same
JP2005023234A (ja) * 2003-07-04 2005-01-27 Jsr Corp アクリル系重合体および感放射線性樹脂組成物

Also Published As

Publication number Publication date
DE602004018648D1 (de) 2009-02-05
JPWO2005012374A1 (ja) 2007-09-27
EP1652866A1 (en) 2006-05-03
CN100374475C (zh) 2008-03-12
KR101109798B1 (ko) 2012-03-13
CN1842551A (zh) 2006-10-04
WO2005012374A1 (ja) 2005-02-10
US20070269754A1 (en) 2007-11-22
TWI351579B (zh) 2011-11-01
ATE418570T1 (de) 2009-01-15
EP1652866A4 (en) 2007-04-11
JP4765625B2 (ja) 2011-09-07
US7704669B2 (en) 2010-04-27
KR20060059998A (ko) 2006-06-02
EP1652866B1 (en) 2008-12-24

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