TW200505893A - Sulfonium salts, radiation-sensitive acid generators, and positive radiation-sensitive resin compositions - Google Patents
Sulfonium salts, radiation-sensitive acid generators, and positive radiation-sensitive resin compositionsInfo
- Publication number
- TW200505893A TW200505893A TW093101662A TW93101662A TW200505893A TW 200505893 A TW200505893 A TW 200505893A TW 093101662 A TW093101662 A TW 093101662A TW 93101662 A TW93101662 A TW 93101662A TW 200505893 A TW200505893 A TW 200505893A
- Authority
- TW
- Taiwan
- Prior art keywords
- radiation
- sensitive
- group
- salt compound
- sulfonium salt
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/72—Benzo[c]thiophenes; Hydrogenated benzo[c]thiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/78—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems condensed with rings other than six-membered or with ring systems containing such rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003013294 | 2003-01-22 | ||
JP2003271015 | 2003-07-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200505893A true TW200505893A (en) | 2005-02-16 |
Family
ID=32775171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093101662A TW200505893A (en) | 2003-01-22 | 2004-01-20 | Sulfonium salts, radiation-sensitive acid generators, and positive radiation-sensitive resin compositions |
Country Status (6)
Country | Link |
---|---|
US (1) | US7371503B2 (zh) |
EP (1) | EP1586570A4 (zh) |
JP (1) | JP3760952B2 (zh) |
KR (1) | KR101086169B1 (zh) |
TW (1) | TW200505893A (zh) |
WO (1) | WO2004065377A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395064B (zh) * | 2005-10-28 | 2013-05-01 | Sumitomo Chemical Co | 適用於酸產生劑之鹽及含有該鹽之化學放大光阻組成物 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006276755A (ja) * | 2005-03-30 | 2006-10-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法および接続端子の製造方法 |
JP4667945B2 (ja) | 2005-04-20 | 2011-04-13 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2006301289A (ja) * | 2005-04-20 | 2006-11-02 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト組成物およびレジストパターン形成方法 |
WO2008143301A1 (ja) * | 2007-05-23 | 2008-11-27 | Jsr Corporation | パターン形成方法及びそれに用いる樹脂組成物 |
JP5233995B2 (ja) * | 2007-06-05 | 2013-07-10 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP5997873B2 (ja) * | 2008-06-30 | 2016-09-28 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
JP5377172B2 (ja) * | 2009-03-31 | 2013-12-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
US9023579B2 (en) * | 2009-07-10 | 2015-05-05 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition |
JP5645510B2 (ja) * | 2009-07-10 | 2014-12-24 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法 |
CN102225924B (zh) * | 2009-12-10 | 2015-04-01 | 罗门哈斯电子材料有限公司 | 光酸发生剂和包含该光酸发生剂的光致抗蚀剂 |
JP5621735B2 (ja) * | 2010-09-03 | 2014-11-12 | 信越化学工業株式会社 | パターン形成方法及び化学増幅ポジ型レジスト材料 |
JP5283782B2 (ja) * | 2011-03-30 | 2013-09-04 | 三菱マテリアル株式会社 | アニオンのスクリーニング方法 |
EP2527918A2 (en) * | 2011-05-27 | 2012-11-28 | Rohm and Haas Electronic Materials LLC | Photoresist composition |
US9256125B2 (en) * | 2013-03-30 | 2016-02-09 | Rohm And Haas Electronic Materials, Llc | Acid generators and photoresists comprising same |
US9678029B2 (en) | 2014-08-22 | 2017-06-13 | Honeywell International Inc. | Oxidation catalyst detector for aircraft components |
US9383644B2 (en) | 2014-09-18 | 2016-07-05 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
EP2998297A1 (en) | 2014-09-18 | 2016-03-23 | Heraeus Materials Korea Corporation | Photo-acid generating compounds, compositions comprising said compounds, composite and process for making said composite as well as uses of said compounds |
US9477150B2 (en) | 2015-03-13 | 2016-10-25 | Heraeus Precious Metals North America Daychem LLC | Sulfonic acid derivative compounds as photoacid generators in resist applications |
JP6474528B2 (ja) | 2015-08-21 | 2019-02-27 | ヘレウス プレシャス メタルズ ノース アメリカ デイケム エルエルシー | レジスト塗布における光酸発生剤としてのスルホン酸誘導体化合物 |
EP3182203A1 (en) | 2015-12-18 | 2017-06-21 | Heraeus Precious Metals North America Daychem LLC | A combination of nit derivatives with sensitizers |
JP6714533B2 (ja) | 2017-03-22 | 2020-06-24 | 信越化学工業株式会社 | スルホニウム塩、レジスト組成物、及びパターン形成方法 |
JP6905872B2 (ja) * | 2017-06-01 | 2021-07-21 | 東友ファインケム株式会社Dongwoo Fine−Chem Co., Ltd. | 着色樹脂組成物 |
TWI827584B (zh) | 2018-03-16 | 2024-01-01 | 美商賀利氏電子化工有限責任公司 | 作為抗蝕劑應用中之光酸產生劑的環狀磺酸酯化合物 |
JP6691203B1 (ja) * | 2018-12-26 | 2020-04-28 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、感光性ドライフィルムの製造方法、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法 |
CN117440944A (zh) | 2021-06-23 | 2024-01-23 | 贺利氏电子化学品有限公司 | 在抗蚀剂应用中作为光致产酸剂的含氧噻鎓离子的磺酸衍生物化合物 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH497399A (de) * | 1968-10-15 | 1970-10-15 | Geigy Ag J R | Verfahren zur Herstellung von Dihydroxyarylsulfoniumsalzen |
KR100294715B1 (ko) * | 1995-09-14 | 2001-09-17 | 포만 제프리 엘 | 경화된 감광성 폴리시아누레이트 레지스트,그로부터 제조된 구조체 및 그의 제조방법 |
US6187504B1 (en) | 1996-12-19 | 2001-02-13 | Jsr Corporation | Radiation sensitive resin composition |
DE10054550A1 (de) | 1999-11-01 | 2001-05-31 | Nec Corp | Sulfoniumsalz-Verbindung, Photoresist-Zusammensetzung und Verfahren zur Muster-/Strukturerzeugung unter Verwendung derselben |
JP4543558B2 (ja) * | 2001-02-02 | 2010-09-15 | Jsr株式会社 | 感放射線性樹脂組成物 |
EP1270553B1 (en) * | 2001-06-29 | 2009-11-18 | JSR Corporation | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition |
JP2003335826A (ja) * | 2002-05-20 | 2003-11-28 | Jsr Corp | 共重合体とその製造方法および感放射線性樹脂組成物 |
JP4448705B2 (ja) * | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
TWI375121B (en) * | 2004-06-28 | 2012-10-21 | Fujifilm Corp | Photosensitive composition and method for forming pattern using the same |
-
2004
- 2004-01-09 WO PCT/JP2004/000130 patent/WO2004065377A1/ja active Search and Examination
- 2004-01-09 JP JP2005508025A patent/JP3760952B2/ja not_active Expired - Lifetime
- 2004-01-09 US US10/543,092 patent/US7371503B2/en active Active
- 2004-01-09 KR KR1020057009761A patent/KR101086169B1/ko active IP Right Grant
- 2004-01-09 EP EP04701104A patent/EP1586570A4/en not_active Withdrawn
- 2004-01-20 TW TW093101662A patent/TW200505893A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395064B (zh) * | 2005-10-28 | 2013-05-01 | Sumitomo Chemical Co | 適用於酸產生劑之鹽及含有該鹽之化學放大光阻組成物 |
Also Published As
Publication number | Publication date |
---|---|
KR101086169B1 (ko) | 2011-11-25 |
US20060141383A1 (en) | 2006-06-29 |
US7371503B2 (en) | 2008-05-13 |
WO2004065377A1 (ja) | 2004-08-05 |
KR20050098227A (ko) | 2005-10-11 |
JP3760952B2 (ja) | 2006-03-29 |
JPWO2004065377A1 (ja) | 2006-05-18 |
EP1586570A4 (en) | 2007-06-20 |
EP1586570A1 (en) | 2005-10-19 |
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