TW200505277A - Deposition of permanent polymer structures for OLED fabrication - Google Patents
Deposition of permanent polymer structures for OLED fabricationInfo
- Publication number
- TW200505277A TW200505277A TW093110981A TW93110981A TW200505277A TW 200505277 A TW200505277 A TW 200505277A TW 093110981 A TW093110981 A TW 093110981A TW 93110981 A TW93110981 A TW 93110981A TW 200505277 A TW200505277 A TW 200505277A
- Authority
- TW
- Taiwan
- Prior art keywords
- well
- layer
- light emitting
- electrode layer
- disposed
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002955 isolation Methods 0.000 abstract 2
- 150000003384 small molecules Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/422,212 US7427529B2 (en) | 2000-06-06 | 2003-04-23 | Deposition of permanent polymer structures for OLED fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200505277A true TW200505277A (en) | 2005-02-01 |
Family
ID=33309584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093110981A TW200505277A (en) | 2003-04-23 | 2004-04-20 | Deposition of permanent polymer structures for OLED fabrication |
Country Status (3)
Country | Link |
---|---|
US (2) | US7427529B2 (US07427529-20080923-C00011.png) |
TW (1) | TW200505277A (US07427529-20080923-C00011.png) |
WO (1) | WO2004095600A2 (US07427529-20080923-C00011.png) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6762132B1 (en) | 2000-08-31 | 2004-07-13 | Micron Technology, Inc. | Compositions for dissolution of low-K dielectric films, and methods of use |
US6703639B1 (en) * | 2002-12-17 | 2004-03-09 | The United States Of America As Represented By The Secretary Of The Navy | Nanofabrication for InAs/AlSb heterostructures |
US20060073687A1 (en) * | 2002-12-30 | 2006-04-06 | Koninklijke Philips Electronics N.V. | Method for maskless fabrication of self-aligned structures comprising a metal oxide |
US7773064B2 (en) * | 2003-07-02 | 2010-08-10 | Kent Displays Incorporated | Liquid crystal display films |
CN1914031B (zh) | 2004-01-28 | 2011-11-16 | 肯特显示器公司 | 可悬垂液晶转移显示膜 |
US6992326B1 (en) | 2004-08-03 | 2006-01-31 | Dupont Displays, Inc. | Electronic device and process for forming same |
US7276453B2 (en) * | 2004-08-10 | 2007-10-02 | E.I. Du Pont De Nemours And Company | Methods for forming an undercut region and electronic devices incorporating the same |
US7166860B2 (en) * | 2004-12-30 | 2007-01-23 | E. I. Du Pont De Nemours And Company | Electronic device and process for forming same |
WO2007100125A1 (ja) * | 2006-02-28 | 2007-09-07 | Advanced Interconnect Materials, Llc | 半導体装置、その製造方法およびその製造方法に用いるスパッタリング用ターゲット材 |
WO2007142603A1 (en) * | 2006-06-09 | 2007-12-13 | Agency For Science, Technology And Research | An integrated shadow mask and method of fabrication thereof |
JP5650402B2 (ja) | 2006-07-25 | 2015-01-07 | エルジー・ケム・リミテッド | 有機発光素子の製造方法およびこれによって製造された有機発光素子 |
KR101586673B1 (ko) * | 2006-12-22 | 2016-01-20 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
GB2458454B (en) * | 2008-03-14 | 2011-03-16 | Cambridge Display Tech Ltd | Electronic devices and methods of making the same using solution processing techniques |
US8314716B2 (en) * | 2008-03-27 | 2012-11-20 | Siemens Industry, Inc. | Use of OLED technology in HVAC sensors |
US20100019239A1 (en) * | 2008-07-23 | 2010-01-28 | Electronics And Telecommunications Research Institute | Method of fabricating zto thin film, thin film transistor employing the same, and method of fabricating thin film transistor |
US8574934B2 (en) * | 2011-09-19 | 2013-11-05 | The Regents Of The University Of Michigan | OVJP patterning of electronic devices |
ITMI20112296A1 (it) | 2011-12-16 | 2013-06-17 | St Microelectronics Srl | Dispositivo elettronico flessibile incapsulato e relativo metodo di fabbricazione |
US8916337B2 (en) * | 2012-02-22 | 2014-12-23 | International Business Machines Corporation | Dual hard mask lithography process |
US8870345B2 (en) * | 2012-07-16 | 2014-10-28 | Xerox Corporation | Method of making superoleophobic re-entrant resist structures |
KR20140090458A (ko) * | 2013-01-09 | 2014-07-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
CN105393334B (zh) * | 2013-03-29 | 2018-05-11 | 应用材料公司 | 压印有图案以形成隔离器件区域的基板 |
US9296879B2 (en) * | 2013-09-03 | 2016-03-29 | Rohm And Haas Electronic Materials Llc | Hardmask |
US9082735B1 (en) * | 2014-08-14 | 2015-07-14 | Srikanth Sundararajan | 3-D silicon on glass based organic light emitting diode display |
CN104766933B (zh) * | 2015-04-30 | 2016-11-16 | 京东方科技集团股份有限公司 | 一种隔离柱及其制作方法、显示面板及显示装置 |
JP6744395B2 (ja) * | 2016-03-14 | 2020-08-19 | 国立大学法人北陸先端科学技術大学院大学 | 積層体、エッチングマスク、積層体の製造方法、及びエッチングマスクの製造方法、並びに薄膜トランジスタの製造方法 |
KR20210014966A (ko) | 2019-07-31 | 2021-02-10 | 엘지디스플레이 주식회사 | 기판 홀을 포함하는 디스플레이 장치 |
CN113737131B (zh) * | 2021-09-09 | 2023-12-01 | 杭州美迪凯光电科技股份有限公司 | 一种晶圆表面吸收式ir镀膜工艺 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929682A1 (de) * | 1979-07-04 | 1981-01-15 | Bbc Brown Boveri & Cie | Verfahren zum aetzen von silizium- substraten und substrat zur durchfuehrung des verfahrens |
US4439464A (en) * | 1982-05-11 | 1984-03-27 | University Patents, Inc. | Composition and method for forming amorphous chalcogenide films from solution |
US4770590A (en) * | 1986-05-16 | 1988-09-13 | Silicon Valley Group, Inc. | Method and apparatus for transferring wafers between cassettes and a boat |
US5140366A (en) * | 1987-05-29 | 1992-08-18 | Canon Kabushiki Kaisha | Exposure apparatus with a function for controlling alignment by use of latent images |
US5178989A (en) * | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
US5140590A (en) * | 1990-01-31 | 1992-08-18 | Mitel Corporation | Telephone or data switching system with variable protocol inter-office communication |
JP2626289B2 (ja) * | 1990-03-27 | 1997-07-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6072207A (en) * | 1991-02-25 | 2000-06-06 | Symetrix Corporation | Process for fabricating layered superlattice materials and making electronic devices including same |
US5486176A (en) * | 1991-03-27 | 1996-01-23 | Smith & Nephew Richards, Inc. | Angled bone fixation apparatus |
US5292558A (en) * | 1991-08-08 | 1994-03-08 | University Of Texas At Austin, Texas | Process for metal deposition for microelectronic interconnections |
JP3416134B2 (ja) * | 1992-11-19 | 2003-06-16 | ザ ユニバーシティ コート オブ ザ ユニバーシティ オブ ダンディ | 付着方法 |
US5272099A (en) * | 1992-11-27 | 1993-12-21 | Etron Technology Inc. | Fabrication of transistor contacts |
JP2803999B2 (ja) * | 1993-11-10 | 1998-09-24 | 現代電子産業株式会社 | 半導体装置の微細パターン製造法 |
US5534312A (en) * | 1994-11-14 | 1996-07-09 | Simon Fraser University | Method for directly depositing metal containing patterned films |
US5952037A (en) * | 1995-03-13 | 1999-09-14 | Pioneer Electronic Corporation | Organic electroluminescent display panel and method for manufacturing the same |
JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US5652166A (en) * | 1996-01-11 | 1997-07-29 | United Microelectronics Corporation | Process for fabricating dual-gate CMOS having in-situ nitrogen-doped polysilicon by rapid thermal chemical vapor deposition |
US5627087A (en) * | 1996-03-11 | 1997-05-06 | United Microelectronics Corporation | Process for fabricating metal-oxide semiconductor (MOS) transistors based on lightly doped drain (LDD) structure |
US5766784A (en) * | 1996-04-08 | 1998-06-16 | Battelle Memorial Institute | Thin films and uses |
US6048769A (en) * | 1997-02-28 | 2000-04-11 | Intel Corporation | CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers |
JP3892565B2 (ja) * | 1997-02-28 | 2007-03-14 | 株式会社東芝 | パターン形成方法 |
US6107736A (en) * | 1997-06-02 | 2000-08-22 | Motorola, Inc. | Organic electroluminescent display device and method of fabrication |
US6069443A (en) * | 1997-06-23 | 2000-05-30 | Fed Corporation | Passive matrix OLED display |
US5935762A (en) * | 1997-10-14 | 1999-08-10 | Industrial Technology Research Institute | Two-layered TSI process for dual damascene patterning |
TW432896B (en) | 1997-10-15 | 2001-05-01 | Siemens Ag | Preparation of organic electroluminescencizing elements |
US6013538A (en) * | 1997-11-24 | 2000-01-11 | The Trustees Of Princeton University | Method of fabricating and patterning OLEDs |
US5953587A (en) | 1997-11-24 | 1999-09-14 | The Trustees Of Princeton University | Method for deposition and patterning of organic thin film |
US6307087B1 (en) * | 1998-07-10 | 2001-10-23 | Massachusetts Institute Of Technology | Ligands for metals and improved metal-catalyzed processes based thereon |
US6297519B1 (en) * | 1998-08-28 | 2001-10-02 | Fujitsu Limited | TFT substrate with low contact resistance and damage resistant terminals |
US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6235693B1 (en) * | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
US6506616B1 (en) * | 1999-11-18 | 2003-01-14 | Texas Instruments Incorporated | Photolithographic method for fabricating organic light-emitting diodes |
US6191433B1 (en) * | 2000-03-17 | 2001-02-20 | Agilent Technologies, Inc. | OLED display device and method for patterning cathodes of the device |
EP1305824A4 (en) * | 2000-06-06 | 2007-07-25 | Univ Fraser Simon | METHOD FOR MANUFACTURING ELECTRONIC MATERIALS |
US6696363B2 (en) * | 2000-06-06 | 2004-02-24 | Ekc Technology, Inc. | Method of and apparatus for substrate pre-treatment |
US6433358B1 (en) * | 2000-09-11 | 2002-08-13 | International Business Machines Corporation | Method for producing an organic light emitting device (OLED) and OLED produced thereby |
US6548961B2 (en) * | 2001-06-22 | 2003-04-15 | International Business Machines Corporation | Organic light emitting devices |
DE20120643U1 (de) | 2001-12-20 | 2002-03-21 | Chang Peng Kuan | Organische Elektrolumineszenzvorrichtung |
-
2003
- 2003-04-23 US US10/422,212 patent/US7427529B2/en not_active Expired - Fee Related
-
2004
- 2004-04-19 WO PCT/US2004/012201 patent/WO2004095600A2/en active Application Filing
- 2004-04-20 TW TW093110981A patent/TW200505277A/zh unknown
-
2005
- 2005-09-30 US US11/240,921 patent/US20060208630A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20040101988A1 (en) | 2004-05-27 |
US20060208630A1 (en) | 2006-09-21 |
US7427529B2 (en) | 2008-09-23 |
WO2004095600A2 (en) | 2004-11-04 |
WO2004095600A3 (en) | 2005-05-12 |
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