TW200500800A - Resist pattern formation method - Google Patents
Resist pattern formation methodInfo
- Publication number
- TW200500800A TW200500800A TW093114120A TW93114120A TW200500800A TW 200500800 A TW200500800 A TW 200500800A TW 093114120 A TW093114120 A TW 093114120A TW 93114120 A TW93114120 A TW 93114120A TW 200500800 A TW200500800 A TW 200500800A
- Authority
- TW
- Taiwan
- Prior art keywords
- resist
- coating film
- substrate
- coating
- resist pattern
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003174861A JP2005010487A (ja) | 2003-06-19 | 2003-06-19 | レジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200500800A true TW200500800A (en) | 2005-01-01 |
TWI254191B TWI254191B (en) | 2006-05-01 |
Family
ID=34098221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093114120A TWI254191B (en) | 2003-06-19 | 2004-05-19 | Resist pattern formation method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2005010487A (zh) |
KR (1) | KR100676120B1 (zh) |
TW (1) | TWI254191B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4368267B2 (ja) | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
JP4749232B2 (ja) * | 2006-05-24 | 2011-08-17 | 信越化学工業株式会社 | レジスト上層反射防止膜材料およびパターン形成方法 |
JP2010066340A (ja) * | 2008-09-09 | 2010-03-25 | U-Tec Corp | 輝点欠陥の検出装置 |
US8012675B2 (en) | 2008-09-18 | 2011-09-06 | Macronix International Co., Ltd. | Method of patterning target layer on substrate |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004361554A (ja) * | 2003-06-03 | 2004-12-24 | Tokyo Ohka Kogyo Co Ltd | 1つの基板上に集積回路と液晶ディスプレイ部分が形成された基板製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
JP4121900B2 (ja) * | 2003-06-04 | 2008-07-23 | 東京応化工業株式会社 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
-
2003
- 2003-06-19 JP JP2003174861A patent/JP2005010487A/ja active Pending
-
2004
- 2004-05-19 TW TW093114120A patent/TWI254191B/zh not_active IP Right Cessation
- 2004-06-16 KR KR1020040044398A patent/KR100676120B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100676120B1 (ko) | 2007-02-02 |
JP2005010487A (ja) | 2005-01-13 |
KR20040110102A (ko) | 2004-12-29 |
TWI254191B (en) | 2006-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |