TW200423439A - Resistance electrode structure, compound semiconductor light emitting device having the same, and LED lamp - Google Patents

Abstract

The subject of the present invention is to provide a compound semiconductor light emitting device with high light emitting intensity by configuring p-type resistance electrode with low contact resistance in p-type boron phosphide semiconductor layer. The solution is to contact the bottom of the surface of p-type boron phosphide semiconductor layer as p-type resistive electrodes using lanthanoide elements or alloy films.

Description

200423439 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention is a P-shaped resistive electrode structure provided in contact with the surface of a boron phosphide-based semiconductor layer giving p-type conduction, and using the p-type The resistive electrode structure relates to a technology for forming a compound semiconductor element, and in particular, a compound semiconductor light emitting element. [Prior art] In the past, boron phosphide-based semiconductors such as boron phosphide (chemical formula: BP), a type of III-ν compound semiconductor, and light-emitting diode vacuum tubes (English: LED) composed of mixed crystals were used. The technology of the element is disclosed (for example, refer to Patent Document 1). For example, a p-shaped conductive monolithic boron phosphide (chemical formula: BP) layer is a barrier layer composed of a light-emitting portion that is a pn-junction type double heterostructure (DH) junction structure type (for example, refer to a patent document) 2). The boron phosphide-based semiconductor light emitting diode vacuum tube has, for example, a structure in which a p-shaped resistive electrode is provided on a surface of a p-shaped copper plating layer (clad) formed of a boron phosphide layer. Regarding the prior art, for example, an example of forming a p-shaped resistive electrode from aluminum (A1) with respect to the p-shaped boron phosphide layer is known (for example, Non-Patent Document 1). Saponified boron is such that any conductive semiconductor layer of low-resistance n-shaped or p-shaped can be obtained without intentionally adding impurities (for example, refer to Patent Document 1). Accordingly, a conductive boron phosphide layer is used to form a resistive electrode, for example, a clad layer or a contact layer. Regarding a conventional compound semiconductor light-emitting device having a ρ -4- (2) 200423439-shaped boron phosphide layer having a magnesium (element symbol: Mg) as a contact layer, gold (element symbol: Au) • zinc (element symbol: An example of the composition of Zn) is disclosed (for example, refer to Patent Document 2).

However, as described above, the stable formation of a resistive electrode that gives good resistive contact to p-shaped boron phosphide cannot be achieved. Therefore, the input resistance when the current (element driving power) flowing through the light-emitting element flows is meaninglessly increased, and it becomes a problem that the L E D with a high forward current (V f) is different. In addition, it becomes a disadvantageous situation when a laser diode (LD) that obtains a low valve voltage (Vth) is obtained. [Patent Document 1] Reference is made to US Patent No. 6,069,021. [Patent Document 2] Refers to Japanese Patent Application Laid-Open No. 2_288388. [Non-Patent Document 1] K.Shohno et al., Jaanaru obu kurisutaru guroosu (

J.Crystal Growth), Episode 24/25, 1974 (Netherlands), p. 193 [Content of the Invention] [Invention to Solve the Problem] The present invention is' presenting that it contains boron (B) and phosphorus (P) as constituent elements The surface of the P-shaped scaled boron-based semiconductor layer is in contact with a p-type resistor and a t-electrode provided thereon and has an excellent resistive contact. The p-shaped electrode is a positive electrode that is provided on the p-shaped semiconductor layer. In addition, (5) 200423439 provides a compound semiconductor light-emitting device including a p-shaped resistive electrode made of the constitution of the present invention. [Methods for solving problems]

(1) A resistive electrode structure is provided in which a resistive electrode including a conductive boron phosphide-based semiconductor layer that is a constituent element of boron and phosphorus that imparts p-type conduction is brought into contact with the p-type boron phosphide-based semiconductor. The lowest bottom surface of the electrode in contact with the surface of the layer is a resistive electrode structure characterized by a lanthanide or an alloy containing a lanthanide. (2) The bottom surface contacting the surface of the p-type boron phosphide-based semiconductor layer is composed of an alloy of lanthanum and an element having a work function of 4.5 eV or less. The resistive electrode structure described in (1) above is characterized. (3) The bottom surface in contact with the surface of the p-type boron phosphide-based semiconductor layer is a resistive electrode structure as described in (1) or (2) above, which is composed of an alloy of elements of lanthanum and aluminum.

(4) The bottom surface in contact with the surface of the P-shaped boron phosphide-based semiconductor layer is a resistive electrode structure as described in (1) or (2) above, which is composed of an alloy of elements of lanthanum and silicon. (5) The aforementioned P-shaped boron-based semiconductor layer is made of p-type monomer boron phosphide that is undoped without intentionally adding impurities and has an energy gap at room temperature of 2 · 8 ev or more and 5 · 4 e V or less as It is characterized by the compound semiconductor device containing the resistive electrode structure as described in said (1) or (2). (6) Compound semiconductor light-emitting element made of the compound semiconductor device described in (5) above-(6) 200423439

(7) Equipped with a substrate made of insulating or conductive crystals, a light-emitting layer made of a compound semiconductor layer formed on the crystal substrate, and provided on the light-emitting layer to contain boron and phosphorus that impart P-shaped conduction The conductive boron phosphide-based semiconductor layer of the constituent element is in contact with the compound semiconductor light-emitting element of the p-type resistive electrode which is in contact with the resistive contact of the P-shaped boron phosphide-based semiconductor layer, and is in contact with the aforementioned boron phosphide-based semiconductor. At least the aforementioned P-shaped resistive electrode on the surface of the layer is also a compound semiconductor light-emitting element characterized by being composed of a lanthanide element or an alloy containing a lanthanide element. (8) The bottom surface of the surface of the p-type boron phosphide-based semiconductor layer is a compound semiconductor light-emitting device as described in (7) above, which is composed of an alloy of lanthanum and an element having a work function of 4.5 eV or less. (9) The compound semiconductor light-emitting device according to (7) or (8) above, characterized in that the bottom surface contacting the surface of the p-type boron phosphide-based semiconductor layer is made of an alloy of lanthanum and aluminum elements.

(10) The compound semiconductor light-emitting device according to (7) or (8) above, characterized in that the bottom surface contacting the surface of the p-type boron phosphide-based semiconductor layer is composed of an alloy of lanthanum and silicon elements. (Π) The compound semiconductor layer is characterized in that the compound semiconductor light-emitting device described in (7) and (8) above is characterized by a group III-V compound semiconductor system. (1 2) The compound semiconductor layer is composed of indium gallium nitride (composition formula

GaxIni.xN ·· OS X '1) or gallium nitride nitride (compositional GaN ^ Py: 0 ^ YSl) is a compound semiconductor light-emitting device as described in (7) or (8) above, which is characterized in that . (5) 200423439 (1 3) The impure substance (7) or I (1 4) before the abutment electrode for the P-shaped resistor is not doped with 2.8eV as described in (7) (15) above. [Embodiment] The resistive contact of the present invention is that the present phosphorus (P) is a structural inversion Ba Al ^ GaYIni., 0 &lt; α + β + γ g 1 Βα Α1.6 GayIni_ 0 &lt; α + β + γ ^ 1 , BP), boron phosphide, 0 $ γ &lt; 1), δ &lt; 1), and mixed crystals of trifluorfon. The compound semiconductor light-emitting device described in [8] is characterized in that the bottom portion of a neutral electrode composed of a lanthanide element or an alloy containing a lanthanide element has a planar shape, a connection shape, and an adjacently formed mesh portion. The p-type boron-based semiconductor layer is characterized by p-type monomer boron phosphide without intentional addition of impurities and a room temperature band gap of _t 5.4eV or less, or the compound semiconductor light-emitting device according to (8). . Use the LED lamp described in any one of (7) to (14) above. An electrode structure that provides excellent properties for a p-type boron phosphide-based semiconductor layer. The bright boron phosphide-based semiconductor layer is a compound semiconductor containing boron (B) and its elements, for example, .apYPr-5As5 (0 &lt; a ^ 1 'β &lt; \' 7 &lt; 1, 〇 $ δ &lt; 1 ). Also, for example, α · ρ · γP] -δNδ (0 <a S 1, 0 ^ yS &lt; 1, 0 ^ γ &lt; 1, 0 ^ δ &lt; 1). For example, boron phosphide (indium • gallium (composition formula BaGaYIn 1 _α.γρ: 〇 &lt; α $) containing a single body; and boron azide (composition formula BP ^ Nδ: 〇 ^ I) (Composite formula BPyAss) and other plural ν family elements, for example, ΒΡι-δΝδ or BPi_§As§%: I hope that the neighbor (P)

-8-(6) The lower limit composition ratio (1-δ) of 200423439 is 0.550 or more, and more preferably 0.75 or more. The p-type boron phosphide-based semiconductor layer provided with a P-shaped resistive electrode is: halogen ( halogen) method, hydride method, and MOCVD (organic metal chemical vapor deposition) formation. It can also be formed by molecular wire epitaxy (see J. Solid State Chem., 133 (1997), pp. 269 ~ 272)

). For example, the P-shaped single body boron phosphide layer can be formed by a MOCVD method using triethylboron (molecular formula: (C2H5) 3B) and phosphine (molecular formula: PH3) as raw materials. As the formation temperature of the p-shaped BP layer, it is suitable for 100 (temperature of TC to 120CTC. The ratio of raw materials supplied during formation (= PH3 / (C2H5) 3B) is suitable for 10 ° C to 50 ° C. Impurities are not intentionally added, That is to say, the undoped BP layer is effective to avoid denaturation of other layers due to the diffusion of impurities. In addition to the formation temperature and the V / III ratio, if the formation speed is precisely controlled, a large energy gap can be formed. Boron phosphide-based semiconductor layer (refer to Japanese Patent Application No. 2002-158282).

In particular, a p-type boron phosphide-based semiconductor layer having an energy gap at room temperature of 2.8 electron volts (unit: eV) or more and 5.4 eV or less is desirable. More preferably, the p-type boron phosphide-based semiconductor layer having a wide bandgap of 2.8eV to 3.2eV is a compound semiconductor light-emitting device. For example, a barrier having a p-type copper plating (clad) layer can be used. ) Acts as a barrier layer. In addition, the P-type boron phosphide-based semiconductor layer having a wide energy gap is suitable for a substrate composed of indium nitride and gallium (composition GaxIn) .xN: 0 SXS 1) and gallium nitride (composition GaNuPy: OS YS 1) The produced light-emitting layer constitutes visible light such as blue light or colored light as a window (-9- (7) (7) 200423439 window) layer that passes through the outside of the light-emitting element. When the energy gap exceeds 5.4 eV, the barrier difference of the light-emitting layer becomes large, which is disadvantageous for obtaining a compound semiconductor light-emitting device having a low forward voltage or a low threshold voltage. For example, · p-shaped copper plating layer can be formed from a low-resistance boron phosphide layer with a carrier concentration of lxl019cm · 3 or higher and a resistivity of 5 × 1 (Γ2Ω · cm or less at room temperature. The thickness of the p-shaped boron phosphide is suitable to be from 500 nanometers (unit: nm) to 5000 nm or less. The structure of a p-type resistive electrode that is in contact with the p-type copper plating layer is unnecessary. For example, the p-type copper plating layer is unnecessary. The thin layer is disadvantageous because the element drive current supplied through the resistive electrode cannot spread across the entire light-emitting layer, which is a disadvantage. A typical example of a compound semiconductor device using such a p-type boron phosphide-based semiconductor layer is, Although it is not compulsory, it is a boron phosphide-based compound semiconductor LED. In particular, as described above, indium gallium nitride (compositional formula GaxIni.xN: 0SXS1) and gallium nitride (compositional formula GaN) _YpY: 〇SYS 1) The produced light emitting layer is a suitable combination. In addition, compound semiconductor light emitting elements such as a laser diode (LD) can also be suitably used. In the present invention, a copper plating layer or a contact layer for electrode formation is used. P-type boron phosphide semiconductor The bottom surface of the p-shaped resistive electrode provided with a surface contact is composed of a film of lanthanide element or an alloy film containing the element. The lanthanide element is lanthanum (La) with atomic number 57 to thorium (La) with atomic number 71 Element Symbol: Lu) (Refer to Ja · Duffie, "Inorganic Chemistry", (Huangchuan Bookstore, April 15, Showa 46, 5th edition, 262 pages). 钸 (Ce; atomic number 58),镧 (Pr; atomic order 59) 钹 (Nd; atomic order 60), “(Ho; atomic order 67) and other lanthanides-10- (8) 200423439 lanthanoids (refer to the above“ Inorganic Chemistry ”, 263 In particular, in the present invention, the bottom surface portion of the p-shaped resistive electrode is suitable to be composed of lanthanum (La) and its alloy. Among the lanthanoid elements, lanthanum and its alloy are provided with a P-shaped boron phosphide-based semiconductor layer. Good resistive contact. In addition, the adhesion with the boron phosphide-based semiconductor layer is excellent among lanthanoid elements, and can form a strong bottom surface after being coated.

In addition, an alloy of lanthanum and a substance having a work function of 4.5 eV or less is advantageous in that the bottom surface portion of the p-type resistive electrode that is in contact with the surface of the p-type boron phosphide-based semiconductor layer is advantageous. When the work function exceeds 4.5 eV, the barrier with the p-type boron phosphide-based semiconductor layer rapidly increases, which is disadvantageous for forming a P-shaped resistive electrode. An alloy having a large work function and a high melting point is suitable for forming a p-shaped resistive electrode having excellent heat resistance. According to this, the alloy with lower specific work function but lower melting point (work function = 4.0 eV, melting point = 29.8 ° C) and indium (work function = 3.8eV, melting point = 156 ° C), the alloy with high melting point is more Suitable for. For example, an alloy of lanthanum and aluminum (work function = 4.3 eV, melting point = 66 ° C) or lanthanum and sand (work function = 4 · 0 e V, melting point = 14 1 4 ° C) can be composed to give A bottom surface with good resistive contact is advantageous. The content of aluminum (A1) or silicon (Si) is a mass percentage (mass%), and it is suitable to be 1% or more and less than 50%. The lanthanum alloy film can be formed in accordance with methods such as a vacuum evaporation method, an electron beam evaporation method, and a high-frequency sputtering method. A well-known optical lithography process technology processes an alloy film pattern to form a circular shape, a square shape, or the like in a planar shape to form a bottom surface of a desired shape. Others are, for example, lanthanum sulfide (composition formula: La 2 T e 3) or alloy (work function = 4 · 5 e V) with an alloy of lanthanum and tellurium (work function = 4.3 eV, melting point = 450 ° C). , Melting point -11-(9) 200423439 = 1 4 5 3 ° C) Example of lanthanum nickel alloy (composition formula: LaNi5).

Regarding the present invention, a resistive electrode containing a bottom surface portion made of lanthanum and its alloy can be investigated from, for example, general current-voltage (I-V) characteristics. As an example, the I-V characteristics of a p-type resistive electrode composed of lanthanum aluminum alloy (composition formula: LaAl2) are compared with the conventional electrode characteristics. The I-V characteristic is one that is adjacent to the p-shaped resistive electrode at an interval of 3 5 0 # m. Furthermore, the characteristics measured by using a p-type boron phosphide layer having the same resistance reflect the low resistance to reflect the low contact resistance. As shown in the example of FIG. 1, the LaAl2 electrode of the present invention is compared with the conventional aluminum (A1) zirconium or gold (AU) • word (Z π) or gold (A u) • 皴 (B e) alloy electrode. A large amount of current can flow at the same voltage, and a p-shaped resistive electrode with a small contact resistance is attached.

The P-shaped resistive electrode, in particular, has a bottom surface portion that is in good contact with a p-type boron phosphide-based semiconductor layer, and is suitable for being composed of a continuous film without pores. Therefore, the bottom surface portion is preferably composed of a film having a thickness of 10 nm or more and containing lanthanum. More preferably, it is 100 nm to 300 nm. On the surface of the bottom portion, if another metal film is layered, a resistive electrode can be formed by a layered structure. For example, a titanium (Ti) film and a gold (Au) film are sequentially layered on a circular planar bottom surface made of a lanthanum (95% by mass) • aluminum (5% by mass) alloy with a film thickness of 1 to 20 nm. A p-shaped resistive electrode having a three-layer structure is preferred. The uppermost layer of the P-shaped resistive electrode constituting the heavy layer structure is a structure suitable for gold (Au) or aluminum (A1) in order to be easily bonded. In addition, a P-shaped resistive electrode having a three-layer heavy layer structure is provided with a middle layer of -12- (10) (10) 200423439 between the bottom surface portion and the uppermost layer. For example, a transition metal such as titanium or molybdenum (Mo) or Made of platinum (Pt). The P-shaped resistive electrode according to the present invention can provide a compound semiconductor light-emitting device having excellent electrical characteristics. For example, there are LEDs that can provide a low forward voltage (Vf). Vf's low visible light LED has, for example, a multilayer structure including a sapphire substrate / n-shaped gallium nitride (GaN) copper-plated layer / n-shaped indium gallium nitride (GalnN) / p-shaped resistive electrode (BP) copper-plated layer. It is possible to provide a P-shaped resistive electrode made of a lanthanum aluminum alloy film on the surface of the P-shaped BP copper plating layer. The wafer size is, for example, L E D of 3 0 0 // m to 3 5 0 // m, and the bottom surface of the p-shaped resistive electrode is, for example, preferably 90 // m to 150 // m in diameter. If it is composed of a GaxIm-χN (0 &lt; X &lt; 1) layer with a multi-phase structure contained in a phase different from the indium composition (= ΐ-χ), a compound semiconductor having a higher luminous intensity can be effectively formed. Element (refer to Japanese Patent No. 3090057). In addition, for example, in the case of an LED structure having a large flat area on one side with a length of 500, a method of arranging the P-type boron phosphide-based semiconductor layer on the surface of the P-shaped semiconductor layer in a wide range is effective. Due to the driving current of the wide-area diffuser element in the plane, an LED having a high light-emitting intensity or a large light-emitting area becomes favorable. It is desirable to have a resistive electrode with a uniform shape configuration. For example, the surface of the p-shaped boron gallium phosphide mixed crystal layer on the contact light-emitting layer is brought into contact with each other, and p-shaped resistive electrodes made of lanthanum-aluminum alloy in the form of electrical conduction grids or meshes are arranged on each other. In addition, a bottom surface portion made of lanthanum-silicon alloy which is provided in contact with the surface of the p-shaped boron phosphide-based semiconductor layer is electrically connected to the bottom surface portion while extending into a branch shape or a radial shape on the periphery of the wafer. To form a p-shaped resistor-13- (11) 200423439. Further, the base electrode provided in the center of the P-shaped boron phosphide-based semiconductor layer was turned on, and a P-shaped resistive electrode was formed from a plurality of concentric circular lanthanum-aluminum alloy films. The base electrode for the connection of the resistive electrodes with these shapes has a bottom surface made of a material with high resistive contact resistance for the P-shaped boron phosphide-based semiconductor layer, which can prevent the direct drive current of the device directly below the base electrode. Flowing, on the other hand, is advantageous in that it is possible to take out a wide range of diffusion element drive currents in a light emitting area that is advantageous for taking out light to the outside and opening to the outside.

For example, the P-shaped resistive electrode having a desired planar shape is formed, for example, the entire surface of the P-shaped boron phosphide-based semiconductor layer is first formed. For example, the lanthanum-aluminum alloy film is deposited by a normal vacuum evaporation method or an electron beam. The method is to make it adhere first. Second, the desired shape is patterned using a well-known optical lithography process technique. It is suitable to form a pattern in which an equipotential distribution can be formed in the P-shaped boron phosphide-based semiconductor layer. Next, the unnecessary alloy film is removed by a wet etching method or a plasma dry uranium etching method using a halogen gas such as chlorine gas (molecular formula: ci2). Wet etching of lanthanoid alloys is possible by using an acid mixture of glacial acetic acid containing a mixture of glacial acetic acid and hydrogen peroxide. Issued September 10, 977, 1st edition, 1st brush), page 91). [Function] The bottom surface which contacts the surface of the P-shaped boron phosphide-based semiconductor layer is an electrode composed of a lanthanide-based element or an alloy containing the element. The P-shaped boron phosphide-based semiconductor layer has an excellent resistance characteristic. P-shaped resistive electrode • 14- (12) 200423439. The p-shaped boron phosphide-based semiconductor layer has a bottom contact surface, and a p-shaped resistive electrode composed of a lanthanoid element or an alloy containing the element has a function of diffusing a device driving current in a wide range in a light-emitting region. [Embodiment] (First Embodiment)

The present invention will be specifically described with reference to a compound semiconductor LED in which a P-shaped resistive electrode made of lanthanum aluminum alloy (LaAl2) is provided on the surface of the P-shaped boron phosphide-based semiconductor layer.

FIG. 2 shows a multi-layer structure body surface structure pattern for the LED 100 which is used to make a double heterostructure (DH) junction structure. The laminated structure is: on the phosphorus (P) -doped n-shaped (111) -silicon (Si) single crystal substrate 101, a lower copper plating layer made of non-doped n-shaped boron phosphide (BP) is provided. 102. The n-shaped indium gallium nitride (GauGino.iGN) 103a and the gallium nitride (GaN) barrier layer 103b are made of a light emitting layer 103 with multiple layers of multi-mass wells in five cycles. The upper copper-plated layer 104 is made of boron and is formed by stacking. The undoped n-shaped and p-shaped boron phosphide layers 102 and 104 are made of triethyl boron (molecular formula: (C2H5) 3B) as a source of boron (B), and phosphine (molecular formula: PH3) An atmospheric (slightly atmospheric) organometallic vapor phase (MOVPE) method as a phosphorus source is formed. The n-shaped boron phosphide layer 102 is formed at 925 ° C, and the p-shaped boron phosphide layer 104 is formed at 1025 ° C. The light-emitting layer 103 is formed by trimethylgallium (molecular formula: (CH3) 3Ga) / NH3 / H2 reaction system -15- (13) 200423439 atmospheric pressure MOCVD method at 800 ° C. The indium gallium nitride layer constituting the well layer 103a is a multi-phase structure composed of a plurality of phases (Phase) of dissimilar indium composition, and the average indium composition is 0.10 (= 10%). . The layers of the well layer 103a and the barrier layer 103b are, respectively, 5 nm and 10 nm.

The carrier (positive hole) concentration of the undoped p-shaped boron phosphide layer 104 that becomes the copper-plated layer 104 described above is 2 × 1019 cm_3, and 720 nm after the layer. The resistance rate of the same layer 104 at room temperature is 5 × 1 (Γ2Ω · cm. In addition, since the p-shaped boron phosphide layer 104 has an energy gap of 3.2 eV at room temperature, it is used as a means for transmitting light from the light-emitting layer 103 to the outside. The window layer also serves as a p-shaped copper plating layer.

On the entire surface of the P-shaped boron phosphide layer 104 serving as the P-shaped upper copper plating layer, a lanthanum-aluminum (1 ^ 6-12) alloy film 105 and titanium are attached by a normal vacuum evaporation method and an electron beam evaporation method. (Ding) film 106, and gold (eight 11) film 107. Next, limited to the area where the base electrode 108 for wiring is provided, the pattern is selected and implemented by using a well-known optical lithography manufacturing technique in which the above-mentioned three layers of the LaAl2 alloy film 105 remain as the bottom surface. Next, a LaAl2 alloy film or the like in a region other than the base electrode 108 is removed by etching using an acid mixed solution such as a glacial acetic acid-sulfuric acid system to expose the surface of the p-shaped boron phosphide 104. After the photoresist material is peeled off, the application pattern is again selected for setting the grid-like grooves for wafer cutting. Then, using a halogen-containing mixed gas containing chlorine as a plasma dry etching method, the area to which the pattern is applied is limited, and the P-type boron phosphide layer 104 is selectively removed by etching. In addition, on the entire surface of the silicon single crystal substrate 101, a gold (An) film was attached in accordance with a general vacuum evaporation method to form an n-shaped resistive electrode (negative electrode) 109. (1 1 1) S i single crystal substrate 1 〇 · Crystal surface vertical -16- (14) 200423439 Straight cross &lt; 1 10 &gt; Crystal orientation parallel, 50 # m above the stripe The trench is split to serve as a square LED chip with a side of 3 5 0 // m. The present invention is composed of a lanthanum-aluminum (LaAl2) alloy film 105 having excellent adhesion between a bottom surface portion and a p-shaped boron phosphide layer serving as an upper copper plating layer. When a connection is made, a portion may be formed from P The P-shaped resistive electrode 108 between the abutment electrodes of the exfoliated boron phosphide layer 1.

Between the P-shaped n-shaped resistive electrodes 108 and 109, a device driving current of 20 mA flows in the forward direction, and the light emitting characteristic of the LED chip 100 was confirmed. The blue band light with a center wavelength of 440 nm is emitted from the LED 100, and the half-width of the light emission spectrum is 210 millielectron volts (unit: meV). The brightness of the chip state before the resin molding was measured using a general integrating sphere was 11 millicandelas (mcd). In addition, the bottom surface of the p-shaped resistive electrode 105 is composed of a LaAl2 alloy film having a low contact resistance to the P-shaped boron phosphide layer, and the forward voltage (V f) when the forward current is 20 mA is 3. As low as 1 V. In addition, when the reverse current is 1 0 // A, the reverse voltage is as high as 9.5V. In addition, a copper layer is plated from the top of an undoped P-shaped boron phosphide layer composed of a high carrier concentration, and a p-shape of a lanthanum-aluminum alloy film having a low contact resistance is provided to contact the surface of the p-shaped boron phosphide. The resistive electrode and the element driving current make the light emitting area other than the projection area of the abutment electrode emit approximately the same light. (Second Embodiment) A compound semiconductor LED including a lanthanum-silicon alloy p-type resistive electrode provided on a P-shaped boron phosphide-gallium mixed crystal layer will be specifically described as an example. -17- (15) 200423439 The present invention. The basic structure of the compound semiconductor light-emitting element is the same as that of the first embodiment, and the same reference numerals are used for the same parts. The sectional structure is shown in Fig. 3 and the planar structure is shown in Fig. 4.

An undoped P-shaped boron phosphide-gallium mixed crystal layer (Bo.98Gao.o2P) layer 204 is deposited on the light-emitting layer 100 described in the first embodiment. The B〇.98Ga〇〇2P layer 204 is formed by 8 5 (TC by a (C2H5) 3B) / (CH3) 3Ga / PH3 series reduced pressure MOCVD method. The layer thickness is 3 4 0 nm. It becomes Bo.wGamP The carrier concentration of the layer 204 at room temperature is 8 × 1018cnr3, and the resistivity is 5 × 10 · 2Ω · cm.

Next, the entire surface of the P-shaped Bo.MGamP layer 204 is formed, and a lanthanum-silicon (La · Si) alloy film 205 is formed according to a general vacuum evaporation method. The film thickness of the La • Si alloy film 105 is 540 nm. Secondly, patterning is performed using the well-known optical lithography technique and plasma etching technique. Thereafter, the unnecessary alloy film was removed in accordance with the plasma dry etching method. As shown in FIG. 3, the diameter of the central portion of the LED wafer 200 was 150 // m in a circle 205, and the surrounding p-shaped BG.98Ga. ) The surface of the 2P layer was in contact with the mesh 210 and remained on the La · Si alloy film. The circular residual portion forms the intermediate layer 206 and the gold film 207 and completes the base electrode 208. The entire surface of the silicon single crystal substrate 101 is such that gold (Au) 99% by mass • antimony (Sb) 1% by mass alloy film 209 is attached by a general vacuum evaporation method.

Thereafter, the gold-deposited film of the La · Si alloy film subjected to the above-mentioned patterning was deposited in an adhered state, and heat-treated (sin t e r) at 450 ° C for 10 minutes in a hydrogen stream to increase the resistive contact. Therefore, B g. 9 8 G a G _ 〇2 P -18- (16) 200423439 The surface of the layer 204 is made of a P-shaped resistive electrode 205 made of LA · Si, and an inner surface of the silicon single crystal substrate 101 is formed. Resistive electrode 209. The thickness of the Au film formed as the n-shaped resistive electrode 209 is 2 // m.

Next, individual LEDs are separated and cut along cutting lines formed by the uranium engraving process of the above-mentioned La · Si alloy film. The grooves used for cutting are, and [1.-1.0] and [-1.-1.1] crystal orientations of Si single crystals of the substrate 101 are provided in parallel. Therefore, it becomes a rectangular LED chip 200 with 5 00 // m on one side and 600 // m on the other side. The center wavelength of light emission when a 20 mA forward current flows between the p-shaped and n-shaped resistive electrodes 205 and 209 of the large-sized LED chip 200 is 44 Onm. In addition, it was confirmed from the near-field emission image that light emission at the same intensity was given from a light-emitting area other than the abutment electrode in the central portion of the wafer 200. This is because the p-type resistive electrode can be arranged in a shape in which the element operating current is uniformly diffused in a wide range of the B0.98Ga0.02P layer. When the forward current is 20 mA, the forward voltage is 3.4 V, and when the forward current is 10 V A, the forward voltage is 8.3 V.

[Effects of the Invention] According to the present invention, since the P-shaped resistive electrode provided on the surface of the P-shaped boron phosphide-based semiconductor layer in contact with it is made of a lanthanoid element or an alloy film thereof, an electrode having a low contact resistance can be formed. The supplied element driving current is used for efficient light emission, and the effect of giving a compound semiconductor light emitting element with a high light emission intensity has been cited. Furthermore, the compound semiconductor light-emitting element of the present invention is connected to a lead wire, and a resin can be sealed to produce a high-luminance LED lamp. • 19- (17) 200423439 [Brief description of the drawings] [Figure 1] A graph showing the current and voltage characteristics of the present invention and conventional materials. [Fig. 2] A schematic diagram showing a cross-sectional structure of an LED described in the first embodiment.

[Fig. 3] A schematic diagram showing a cross-sectional structure of an LED described in the second embodiment. [Fig. 4] A schematic diagram showing a planar structure of the LED described in the second embodiment. 〔Symbol Description〕

100, 200 ··· LED 1 0 1 ... Sad crystal substrate 102 ... n-shaped copper plated layer 1 0 3 ... n-shaped light-emitting layer 104, 204 ... p-shaped copper plated layer 105, 205 ... p-shaped resistive electrode 106, 206 ... intermediate layer 107, 207 ... pedestal metal 108, 208 ... base electrode 1 09, 209 ... n-shaped resistive electrode 2 1 0 ... p-shaped resistive electrode mesh portion -20-

Claims (1)

(1) 200423439 Patent application scope 1 · If a resistive electrode structure is provided, a resistive electrode is provided in contact with the surface of a conductive boron phosphide-based semiconductor layer containing boron and phosphorus as constituent elements giving p-type conduction. The resistive electrode structure is characterized in that at least the bottom surface of the electrode in contact with the surface of the P-shaped boron phosphide-based semiconductor layer is made of a lanthanide element or an alloy containing the lanthanide element. 2. The resistive electrode structure according to item 1 of the scope of the patent application, wherein the bottom surface contacting the surface of the P-shaped boron phosphide-based semiconductor layer is made of an alloy of lanthanum and an element having a work function of 4.5 eV or less. 3. The resistive electrode structure according to item 1 or 2 of the scope of patent application, wherein the bottom surface contacting the surface of the P-shaped boron phosphide-based semiconductor layer is made of an alloy of lanthanum and aluminum. 4. The resistive electrode structure according to item 1 or 2 of the scope of the patent application, wherein the bottom surface contacting the surface of the P-shaped boron phosphide-based semiconductor layer is made of an alloy of lanthanum and silicon. 5. A compound semiconductor device comprising a resistive electrode structure as described in item 1 or 2 of the scope of the patent application, characterized in that the P-type boron phosphide-based semiconductor layer is a non-intentionally added impurity. Doped p-type monomer boron phosphide with an energy gap of 2.8eV to 5.4eV at room temperature. 6. A compound semiconductor light-emitting device, characterized in that -21-(2) 200423439 is made of a compound semiconductor device described in item 5 of the scope of application for a patent. 7. A compound semiconductor light-emitting device provided with an insulating or A substrate made of conductive crystals; and a light emitting layer made of a compound semiconductor layer formed on the crystal substrate; and a conductive phosphatization provided on the light emitting layer and containing constituent elements of boron and phosphorus imparting p-type conduction Boron-based semiconductor layer And a compound semiconductor light-emitting element of a p-type resistive electrode that is in contact with the resistive contact of the P-type boron phosphide-based semiconductor layer, wherein the P-type resistor is in contact with the surface of the boron phosphide-based semiconductor layer; At least the bottom surface of the sexual electrode is made of lanthanide or alloy containing lanthanide. 8. The compound semiconductor light-emitting device according to item 7 in the scope of the patent application, wherein the bottom surface of the surface of the P-shaped boron phosphide-based semiconductor layer is an alloy of lanthanum and an element having a work function of 4.5 eV or less. 9. The compound semiconductor light-emitting device according to item 7 or 8 in the scope of the patent application, wherein the bottom surface contacting the surface of the aforementioned P-shaped boron phosphide-based semiconductor layer is made of an alloy of lanthanum and aluminum. 10. The compound semiconductor light-emitting element described in item 7 or 8 of the scope of the patent application, wherein the bottom surface contacting the surface of the aforementioned P-shaped boron phosphide-based semiconductor layer is composed of an alloy of lanthanum and element of Shi Xi. 11. The semi-conducting light-emitting element of the compound semi--22- (3) 200423439 conductor described in item 7 or 8 of the scope of application for a patent, wherein the compound semiconductor layer is composed of III- Group V compound semiconductor is made 12. The compound semi-light-emitting device according to item 7 or 8 of the scope of application for a patent, wherein the compound semiconductor layer is made of indium gallium nitride (composition formula 1-YPyGaxIm.xN: 1) or A compound semiconductor made of gallium azide (composition formula ι · γργ: OS YS 1). 1 3 · The compound semi-light-emitting device according to item 7 or 8 of the scope of the patent application, wherein the semi-light-emitting device has a bottom portion of the aforementioned ρ resistive electrode composed of a lanthanide element or an alloy containing a lanthanide element as a planar shape, The shape of the abutment for connection and the meshed part formed adjacent to it. 1 4 · The compound semi-light-emitting device according to item 7 or 8 of the scope of the patent application, wherein the P-shaped neighboring semiconductor layer is doped with no intentionally added impurities and has an energy gap of 2.8 eV at room temperature. Above p-shaped monomer boron phosphide below 5.4eV. 15. A kind of LED lamp characterized by using the compound body element described in item i of item 7 to item 4 of the scope of patent application. -twenty three-