TW200423224A - Exposure system, exposure method, and device fabricating method - Google Patents

Abstract

An opening (55b) for passing an exposure light beam (EL) therethrough toward a projection optical system (PL) not through a reticle (R) is made in a movable reticle stage (RST) holding the reticle. Even if an optical member such as a lens constituting the projection optical system is locally (nonuniformly) heated when a pattern formed on the reticle is transferred (exposed) onto a wafer (W) through the projection optical system, the optical member can be illuminated with the exposure light during the nonexposure time through the opening to heat the unheated portion of the optical member not heated during the pattern exposure. Resultantly, the nonuniformity of the heated state of the optical member can be mitigated. The aberration (aberration which is not rotationally symmetrical with respect to the optical axis) hard to correct of the projection optical system caused by the nonuniform heating of the optical member can be suppressed, thereby realizing high accuracy exposure.

Description

200423224 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an exposure device, an exposure method, and a device manufacturing method θ: in detail, the 'system'-a method for forming a semiconductor element (integrated circuit), and a liquid crystal display. For micropatterns of electronic components such as devices, the exposure device and exposure method used, and the device manufacturing method using the above exposure device. [Prior art] _I have been using various exposure devices in the lithography process of manufacturing electronic components such as semiconductor devices and liquid crystal display devices. The types of projection exposure devices that have been mainly used in recent years include step-and-repeat (repeated) reduction projection exposure devices (ie steppers), which expand the pattern to be formed by 4 to 5 times to become light. The pattern on the hood (or reticle) is reduced and transferred to the exposed object such as a wafer through a projection optical system, or a step-scan type formed by improving the stepper. Scanning projection exposure device (ie scanning stepper), etc. ^ In response to the high integration of semiconductor devices, the circuit diagram becomes gradually finer, and the exposure wavelength in the exposure device is gradually developing to a shorter wavelength. Although the current wavelength is mainly 248nm of KrF excimer laser light, 193nm of the FArF excimer f light has gradually entered the practical stage. In addition, the light source of the projection exposure device can oscillate f2 lasers (fluorinated lasers) with a wavelength as short as 157⑽ Tian Zijiu, and ^ ar2 lasers with a wavelength as short as 126⑽, 5 ^ Ar2 lasers, etc., that is, can be rotated out The wavelength of the vacuum ultraviolet region: is, the projection exposure device of the light source (vacuum ultraviolet light), also issued. 200423224 This kind of vacuum ultraviolet light with a wavelength below 200mn will be absorbed by a large amount of glass of general lens materials, so the lens materials that can be used are limited to synthetic quartz or fluoride crystals such as fluorite (calcium fluoride crystal). In particular, when & laser light having a length of 157 nm is used as the light source for exposure, the lens material is limited to fluorite. However, even if these materials are used, the light source for exposure is not completely absorbed, and the light source for exposure in the lens is absorbed by ~ 0.5% of the light source for exposure per 1 cm of penetration. In addition, the true ultraviolet light will be absorbed by the oxygen or tritium in the atmosphere; a large amount of 4 gas is absorbed. Therefore, when using a vacuum ultraviolet light exposure device, the internal gas in its optical path space must be replaced (gas purge) It is formed so as not to absorb low-absorptive gas such as nitrogen or rare gas of the light source for exposure. For example, an exposure device using an oscillation wavelength of 157nm ~ laser as a light source must control the remaining oxygen concentration below the most of the optical path from the laser to the crystal pattern, not only by shortening the wavelength. Since increasing the numerical aperture (NA) of the projection optical system can also improve the resolution, the large MA of the projection optical system is also under development. Furthermore, to achieve the goal of high resolution, it is an important issue to reduce the residual aberration of the projection optical system.

In order to realize the above-mentioned large NA and reduce the aberration, the optical system with a smaller field of view becomes easier to realize. However, in terms of warm-up driving, as far as the exposure-first device is concerned, the larger the exposure area, the better the processing capacity (thr0Ugh Put). The large NA projection optical system, in order to provide an additional exposure area 4, maintains a fixed imaging relationship between the reticle and the wafer during the exposure to scan in a relatively progressive manner. 200423224

On the other hand, “Using the same wavelength and the same _N resolution as Jiang Xiang'an Lu Shi’ ^ You Yu ♦, and super-techniques such as phase shift⑽❿, etc., have also entered the practical stage. This kind of super-resolution technology is used, for example, ‘I ’m familiar with it’. The “phase-shift reticle” used in the pattern on the reticle makes the light 穿透 that passes through the adjacent transmission pattern. Phase difference to improve resolution. At this time, 'Because the incident angle range of the illumination light of the phase-shift reticle is smaller, the resolution improvement effect is better, so it is desirable to use the illumination condition with a narrow incident angle range, that is, coherence fact, According to the sun and moon ^) small lighting conditions. As for other super-analysis technologies, such as deformed lighting such as 4-pole lighting or 2-pole lighting, they have also entered the practical stage. As described above, when vacuum ultraviolet light is used as the light source for exposure, the lens (lens element) constituting the projection optical system absorbs the light source for exposure, in addition to the fact that the energy of the light source for exposure that reaches the wafer is attenuated, and it also means that The above-mentioned lens generates heat by absorbing the energy of the light source for exposure. In addition, when the lens expands due to the above-mentioned heat generation (temperature change), the refractive index changes' and aberrations occur. As mentioned above, the residual aberration required for the projection optical system is small. However, the aberration caused by the heat generated by the above-mentioned absorption exposure light source may exceed the maximum aberration allowed by the projection optical system. Value (allowable value). In particular, when using the combination of the above-mentioned phase-shift reticle and small σ illumination, the exposure beam transmitted through the projection optical system is easy to localize, so that the through-thickness of the projection optical system is localized (or biased). (Setting)), and easy to produce aberration ::: heat. This phenomenon means that in the projection optical system, a rotationally symmetric aberration at the center of r =... Is feared to greatly improve the performance of c-m0s-lsi. When the surface of the Ba® wafer is the "面" plane of the crystal plane, the wafer gate or mine, electrons, or holes have different degrees of movement, so it is best to cut the direction of the crystal's [11 °] direction . Therefore, the .., pages of the transistors are in the "1U" plane orthogonal to the [110] direction). In addition, in the description of the above faces and directions, Asia does not punch the signs of each index. At this time, the direction of the reticle pattern used for the gate process is completely opposite to * 杳 一 古 A m to the 'two-way', so the diffraction light generated from the reticle pattern is also the month and direction. In particular, the use of phase-shift reticles and small-mouth illumination to pass through the projection optical system has a significant localization phenomenon. Moreover, the lenses constituting the projection optical system generate heat by absorbing the light source for exposure. Symmetry such that significant rotational asymmetric aberrations occur in the projection optical system. The right side is the same as the C_hall_ LSi of the previous one. When the surface of Shi Xijing used is a crystal surface "J 〇〇", the square direction with the time pole pattern is the direction. At this time, obvious localization of the diffracted light occurs at the same time as above, so that the rotational asymmetric aberration of 0 occurs in the projection optical system, and even when deformed illumination is used, it causes exposure through the projection optical system 10 200423224. The beam is localized (or biased), and the same problem occurs as described above. [Summary of the Invention] The present invention is proposed based on the problems of the above disclosure. The first purpose of the present invention is to provide an exposure device capable of exposing exposures with high accuracy. A second object of the present invention is to provide an exposure method capable of realizing high-precision exposure. The third object of the present invention is to provide a component manufacturing method to improve the productivity of highly integrated components. The first exposure device of the first aspect of the present invention is "lighting a mask with an energy beam" and transferring a pattern formed on the mask onto a photosensitive object through a projection optical system. It is characterized by: , The light beam is illuminated with the energy beam; the mask stage is formed with an opening, and the energy beam for virtual irradiation is penetrated to the projection optical system without passing through the light mask; At least a part of the soil around the reticle to isolate the perimeter of the reticle from the outside, can hold the reticle freely and move freely. According to this invention, in the mask △ which can be moved freely while holding the mask, == the energy beam to be irradiated penetrates through the mask without passing through the mask: when the optical system is transferred to the photosensitive object (during exposure), In the case where the optical components of the system are locally (not uniformly) heated, the exposure is performed preliminarily. The optical structure ^ ^ +, A through the above openings is strange, and the two optical components for the virtual irradiation are in the above exposure. Without heating, the unevenness of the heating state of the optical member can be alleviated. In this way, it is possible to suppress the aberrations that are difficult to correct for the above-mentioned optical components, and also to produce the projection optical system that suppresses the rotational asymmetric aberration (ie, the rotational asymmetric aberration) that is not centered on the optical axis.疋 Turn to symmetrical aberrations, which can be easily corrected by reversing the rotation of the existing 6 ’′ projection optical system. + The component is driven in the direction of the optical axis by the 'mask' stage with a partition wall (or in the periphery of the mask, and the vicinity of the mask is solid. "U ^ Straight 1 S team Λ. Babe nipples, and external Isolation, so its effect is equivalent to making the device small and lightweight with a partition wall. It can also be used in addition to ^ 1, and, for example, when the space in the partition wall is replaced with a gas with low energy, It is the same as covering the photomask and curved wall with a partition wall. 'It can reduce the amount of light absorbing substances in the peripheral space of the photomask: it can also reduce costs by reducing the amount of gas used. Therefore, when you see _exposure' also Can achieve the device's small size and light weight. "Lai Guang called"% symmetric "" refers to the "rotation: t" which is different from the general meaning, that is, does not mean that "-a figure, etc. only go around at a fixed angle The general definition of "the fixed axis (the axis of symmetry) rotates and can remain unchanged" means "-a figure can be obtained. ~ 36 ... all angles of rotation are rotated along a fixed axis (the axis of symmetry) without changing its Nature ". In all other cases, red to asymmetric. Because & Rotate the light at any angle within the range of the projection optical system or the optical component and the axis is “0 ～ 36〇. The aberration when the component 6 produces the same aberration is a rotationally symmetric aberration. Aberration is rotational asymmetric aberration. In this specification, the terms "rotational symmetry" A "rotational symmetry aberration", and the terms "rotational non-private" and "rotational asymmetric aberration" are adopted as above. Definition: 12 200423224 This% 'can also be part of the opening formed by the above photomask stage 2: exposure: using the opening, the energy beam penetrates to the projection optical system side when the above pattern is transferred on the photosensitive object; Alternatively, when the mask pattern is transferred onto the photosensitive object on the photomask stage, the exposure opening for penetrating the energy beam to the optical system side is formed separately from the aforementioned opening; the aforementioned opening is possible It has the same size as the area where the energy beam is irradiated on the mask when the above pattern is projected on the object. As the first exposure device of the present invention, it is further provided with a mechanism for changing the lighting conditions. In the When the pattern is transferred on the photosensitive object, and the energy beam is irradiated as an energy beam for virtual irradiation through the opening, the lighting conditions of the lighting system are changed. Only then is the illumination of the energy beam radiated through the opening. Conditions, and the thermal bias state of the optical components in the projection optical system due to the irradiation of the energy beam. The first exposure device of the present invention, the step-by-step device, is arranged on the light through the U r gap. The illumination system 2 'of the mask stage is provided with a light penetrating portion through which the energy beam penetrates, a portion thereof, and a surface of the mask stage is used as a movement guide surface of the mask stage; and The platform is provided with a light penetrating portion for the energy beam penetrating through the optical system side of the predetermined second interval disposed on the mask stage 'two-' and facing the mask stage. Acts as a guide surface for the mask stage. At this time, the light penetrating portion of the first mask platform and the light penetrating portion of the second mask flat A light both serve as a path different from that of the virtual beam of the energy beam. Guiliju 13 200423224 The first exposure device of the present invention further includes a beam splitter, which is inserted into the lighting system or the optical path between the lighting system and the projection optical system during the virtual irradiation, and passes through the opening for the virtual irradiation. An energy beam is incident on the projection optical system. Let the first exposure device of I cut be an infrared energy beam for irradiation. The second exposure device of the second aspect of the present invention illuminates the photomask with the energy beam, and transfers the pattern formed on the photomask to the photosensitive object. The utility model is characterized in that it comprises a projection optical system for projecting the pattern image on the photosensitive object and an infrared irradiation mechanism, and irradiating an optical member constituting the projection optical system with infrared rays, so that the optical member can be locally heated. According to this invention, it is provided with the infrared radiation and radiation mechanism which irradiates the optical member which comprises this projection optical system T with infrared rays, and can heat this optical member locally. Therefore, Jiang Bao #… the pattern of the first mask is transmitted through the projection optical system == on the object (at the time of exposure), even if the progeny component constituting the projection light is partially (unevenly) added due to the irradiation of the energy beam In the case of I, it is also possible to irradiate infrared rays with an infrared irradiation mechanism, and to heat the optical member substantially uniformly at other parts of the μ optical member that are not heated by the irradiation of the energy beam. According to 、, °, b, ^, ^ According to this, this suppresses the occurrence of the correction of the aberration of the projection optical system caused by the unevenness of the optical components due to heating. In this case, because the heating of the optical structure # by the Ran LM and Bu line irradiation mechanism can also be performed during exposure Yin, the plate member can more reliably suppress the occurrence of the projected light phase. Therefore, it can be good. The projection characteristics of the asymmetry aberration pre-maintaining system are adjusted to advance the exposure characteristics of the system into 14 200423224 lines: to achieve high-precision exposure. I β a external light irradiation mechanism, by adding the optical component locally Γ and the thermal polarization structure 2Γ ′ generated by the energy beam irradiation in the optical component. The optical component may be a refractive optical element, or the light :: element may also be a reflective optical element. If the latter is a radiation mechanism system The reflection optics are opened by the ffl line, " In cattle, to reflect the lunar surface of the reflecting surface of the energy beam, and irradiate the infrared rays. The second oR output of the present invention | The infrared irradiating mechanism can irradiate a part of the surface of the light member. "This%, part of the surface of the optical member, when the pattern image is projected on the photosensitive object, it is not A, the woman is virgin." This catching rabbits surface of the optical member of the sub-beam irradiation square date of invention * optical device, the lens system of the optical member constituted of fluorite, the infrared irradiation means, can be called a wavelength of 6 - the degree of the optical irradiation member. 2. The second exposure unit of the present invention is composed of V. ,, ^, and the external line irradiation mechanism includes a plurality of optical fibers, one end of which is arranged near the flower and the broadcast sub-member to irradiate the parallel member. infrared. The first and second exposures w φ of the present invention can be further provided with a driving mechanism in the ui clothes to drive at least one of the optical components constituting the projection optical system, and the light driven by the projection optical system Axis direction. In the first 帛 2 exposure apparatus of this month, the energy beam is a fluorine laser light having a wavelength of 157 nm or a pseudo excimer laser light having a wavelength of 19-. 15 200423224 The exposure method according to the third aspect of the present invention is characterized by comprising: a transfer process, irradiating a photomask disposed on the first surface with an energy beam, and transferring the pattern formed on the photomask through a projection optical system. Printed on a photosensitive object arranged on the second surface; and an irradiation process in a state where the photosensitive object is not arranged, in order to ease the irradiation of the optical member in the projection optical system by the energy beam during the transfer process The irradiation conditions of the generated thermal offset state do not pass through the mask, and irradiate the projection optical system with a virtual irradiation energy beam. According to this invention, the photomask disposed on the first surface is illuminated with energy beam, and the pattern formed on the photomask is transferred to the photosensitive object disposed on the second surface through the projection optical system (transfer process). In the state where the photosensitive object is not arranged on the second surface, the condition that is sufficient to alleviate the thermal bias state of the optical material in the projection optical system of the above-mentioned transfer process due to the irradiation of the energy beam is used as the radiation condition. Through the reticle, the projection optical system is irradiated with a virtual beam (","). Therefore, even in the transfer system, the photonic material constituting the projection system is locally (unevenly). Heating, but the optical material can still be heated to a nearly consistent state by the treatment of the irradiation process. The above-mentioned makeup and shot process disclosed by Jin can be performed after the transfer process or before. One method can suppress the uneven heating of optical materials, avoid the occurrence of rotational asymmetric aberrations that are difficult to compensate for the projection optical system, and maintain the good imaging characteristics of the projection optical system to achieve high-precision exposure. ： 时 '可可-Steps included before the irradiation process, insert a beam splitter 2 :: beam: system in the optical path space; in this irradiation process, the energy beam for virtual irradiation is irradiated through the knife action 16 200423224 In the first exposure method of the present invention, the irradiation process is performed when the photosensitive object is exchanged on an object stage holding a photosensitive object. The exposure method of the fourth aspect of the present invention is characterized in that: With the L •• transfer process, the mask is illuminated with an energy beam, and the pattern formed on the mask is transferred to the photosensitive object through the projection optical system; and the heating process is used to irradiate the optical components constituting the projection optical system Infrared light to locally heat the light and the component.% According to the invention, the photomask is illuminated with an energy beam, and the formed pattern is transferred to a photosensitive object through a projection optical system (transfer, to a component constituting the projection optical system). The optical component is irradiated with infrared rays: the component (heating process). Therefore, even in the transfer process, the optical material constituting the projection optical system in the transfer clothing is locally (Unevenly, u support the irradiation of the beam here and ^^ _) The heating% can also heat the optical components that are not heated by the beam of the heart during the heating process, so the other parts are irradiated with infrared rays to add evidence Therefore, the state is always / the optical component is heated to almost the same state. The second system: the occurrence of the projection optical pair formation caused by the uneven heating of the optical component. In this case, '*, so it is the same as the first dagger, 'The rotation of the optical system can also be performed in the exposure, compared to', which can more surely suppress the occurrence of the projection quarter optical aberration. Therefore, it can expose the imaging characteristics of the exposure system with good dimensions, In order to achieve high accuracy in this case, the ',,, and clothing' caused by the poor beam is considered by the heat distribution of the energy sub-members irradiated in the transfer process, and the heating is performed so that the heat distribution is equal to 17 200423224 of the optical member. The optical axis is the result of rotational symmetry. In this case, in the heating process, the optical member may be irradiated with infrared rays by a plurality of optical fibers. In this case, the heating process may irradiate the optical member with infrared rays from at least one of the plurality of optical fibers in response to the thermal offset of the optical member. In this case, the part of the surface of the optical member that is not irradiated with the energy beam can be projected on the photosensitive object during the infrared irradiation position. < The first aspect of the present invention is performed simultaneously. In the 2 exposure method, the transfer process and the heating process are the element manufacturing method according to the aspect 5 of the present invention, which includes a lithography process, and the special feature is that the lithography process uses the i and the second exposure wear of the present invention. Either way, a circuit pattern is formed on a photosensitive object. , Called Gan W Dan and Ku Hu Ge are formed from the second wafer with the [1 1 1] axis approximately the same, formed on the long side of the gate pattern of the gate graph on the 4 silicon wafer, which is related to [110 ] The orthogonal directions of the axis direction or its equivalent axis direction are the same. Alternatively, the photoreceptor system is perpendicular to the main body of the pot, and has a surface axis and a crystal axis [110] axis approximately-so that when the wafer is formed on the circle, the long side direction of the closed pole graph is related to [110]. ] The orthogonal directions of the axis direction or its equivalent axis direction are the same. [Embodiment] "First Embodiment" An embodiment. Hereinafter, the eighteenth 200423224 of the present invention will be described with reference to Figs. 1 to 10. Fig. 1 is an exposure device according to the first embodiment of the present invention. The device is shown in a straight line. The energy beams in the outer regions of the exposure light E / ..., 4 are used as exposure radiation

The toilet thread A is a private thread piece R covered by the 11 piece, and the marking piece R :: is the crystal of the first object

Relatively speaking, the pattern of the reticle R is transmitted through the light side of the projection optical system PL. It is a step-and-scan type (p and SCan) projection exposure method, which is also called a scanning stepper. The exposure device 10 ° includes a light source 101 and an illumination unit ILU. The lighting system of the 1 > system 'uses illumination light for exposure (hereinafter referred to as "exposure: first" M to illuminate the reticle R; the reticle stage m, which is used to protect the reticle ... stage; projection optics, uniform hole, which is used to project the exposure light EL emitted by the reticle R on the wafer evaluation; and wafer stage m, which It is a stage for holding the wafer w. The above-mentioned light source 1G1 uses a round-out wavelength (the gas field emission light (f2 laser) of the vibrational wavelength η%). Also, the light source 10 can also be used, which belongs to a wavelength of about 12 〇m „~ 18_ Other light sources in the vacuum ultraviolet range, for example, a two-molecule laser with an output wavelength of 146nm is called a laser), a chlorine two-molecule laser (Ah laser) with an output of 126⑽, or a turn-out wavelength ArF excimer laser at 193 nm, etc. The light source 101 passes through a light transmission optical system (beam line) that has a beam shaping optical system 21 formed by optical elements such as a beam expander 103a, a cylindrical lens 103, and the like. 〇2, connected to the-end of the lighting system housing 105 constituting the lighting unit ILU. The actual setting of the light source 101 It is not a clean room that contains the lighting unit ILU, projection optical system, etc. 19 200423224, but other spaces with lower cleanliness, or public pipelines installed under the floor of the clean room. The lighting unit ILU is provided with: a lighting system housing 105; a diffractive optical unit 106, which is arranged in a predetermined positional relationship; relay lenses 107 and 109; a reflecting mirror 108; an optical integrator 11; an aperture light of the lighting system The diaphragm 111; the relay lenses 112 and 114; the reticle blind mechanism BL serving as the diaphragm of the field of view; the illumination optical system composed of the curved reflector 115 and the condenser 116. Furthermore, this embodiment The morphology uses an eye lens as the optical integrator 110. Therefore, in the following description, it may be appropriate to call it a "fly eye lens 110." The above-mentioned diffractive optical unit 106 is provided with two diffractive optical elements 6a, 6b. 'And a retainer 6c (refer to FIG. 9) for retaining the diffractive optical element 6a in a predetermined positional relationship. The retainer “is controlled by a control device (not shown) and a driver (not shown). Proceed Rotary or sliding drive, and then one of the diffractive optical elements 6a, 6b is selected, which is set on the optical path of the illumination light (laser light) emitted from the light source 101. As the above-mentioned diffractive optical element 6a ', its use The reason is that the incident illumination light is diffused in a predetermined angle range, and becomes a beam of a predetermined breadth: it is incident on the compound eye lens 110 _ incident surface that has been placed in the light money side. The real shape is also '% 中' diffraction The optical element 6a is mainly used in the known condition of the small alpha lighting described later. For a long time, another purpose of the diffractive optical element 6b is that it has a diffractive sub-pattern (signed, Fig. 9). A plurality of apertures 20 200423224, which are arranged on the exit-side focal plane of the fly-eye lens 110 and constitute the aperture stop plate lu of the lighting system, select aperture light such as a deformed illumination aperture described later having an opening at a predetermined distance from the optical axis. At the time of the diaphragm, the incident illumination light can be diffused in a wide range of angles, and the illumination beam can be focused to a position corresponding to the opening of the deformed illumination aperture with better efficiency. The compound eye lens of the above-mentioned optical integrator 丨 0 is the same as the pupil surface of the illumination optical system (the illumination light illuminated at each position on the reticle R, and the convergence surface of the main ray). It is arranged in a state to make the illuminance distribution of the illumination light of the reticle R uniform. The light (ultraviolet pulsed light) emitted from the fly-eye lens 110 is limited to the exposure light source EL. Moreover, the optical integrator 110 can not only use a fly-eye lens, but can also use a homogenizing member such as a glass ionization rod (a glass with a quadrangular prism, which uses the multiple internal reflections on its side to make the illumination uniform). use. Since the focal side of the exit side of the glass rod must be the same as the R pattern surface of the reticle, the reticle shield mechanism bl is arranged at the focal side of the exit side of the glass rod. It is closer to the common surface of the exit side focal plane on the #R side, and at this time, the diffractive optical element ^ is placed on the incident side focal plane of the glass rod, or it is closer to the light source. ι, of the: near the car surface of the focal side of the shooting side. Thus, in order to realize the above-mentioned positional relationship when using a glass rod, it is necessary to change the arrangement of the illumination unit, the mirror, or the reflector. ........., the implementation of the prisoner uses ultraviolet light with a wavelength shorter than 20- as the exposure light, so the optical component (synthetic quartz or fluorite, Dunhua bell "] Soil. Of course, the other lens materials 21 200423224 constituting the illumination optical system are also preferably materials that can also pass the exposure wavelength intact. The aperture diaphragm plate of the above-mentioned makeup system is arranged on the fly-eye lens 11 The disk-shaped member (that is, the aperture stop of the lighting system) is constituted by the disk-shaped material arranged in the focal plane of the emission side, which is approximately the same as that of the illumination optical system in this embodiment. The plate 11 1) includes, at approximately equal angular intervals, an alpha diaphragm made of, for example, a rainbow diaphragm, a belt lighting material, a belt-shaped aperture, and a plurality of deformed light sources (for example, two or four). ) Deformed-aperture apertures composed of eccentric openings, and / or diaphragms for virtual illumination, etc. In addition, only two of the holes in the picture! Are light only, that is, σ diaphragm j and virtual ones that are not shown in figure i 〇 The light used for irradiation is llb. As can be understood from FIG. 10 In the aperture for virtual illumination lib, there is a circular light-shielding portion, which is centered at 2 points with a predetermined distance in the center of the optical axis in the direction of soil γ (equivalent to the tz direction in FIG. 1), and other The part is 々 ·· ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, 1. The opening diameter is continuously changed within the existing range. The σ diaphragm Ua, with a large opening diameter, is used for general lighting. At the small opening diameter, it is coherent, that is, a small σ diaphragm with a small σ value. · Aperture diaphragm plate of the lighting system controls the motor and other driving devices to select one of the aperture diaphragms in the optical path. The rotation of the reticle is based on the above-mentioned reticle masking mechanism BL for the exposure light el by the control 11c ′ (not shown). The actual arrangement surface is slightly conjugated to the conjugate surface of the pattern surface of the reticle R. A defocused surface, which includes ϋ # 4- 1 1 〇U 疋 私 绿 '& which has an opening of a predetermined shape to regulate the lighting area on the marking line 22 200423224 slice R; and a movable marking line Sheet mask 113b, which is a pattern of the reticle R arranged near the arrangement surface of the " Ha fixed reticle mask The conjugate surface has a variable opening, and its position and width can be changed in the non-scanning direction corresponding to the scanning direction and orthogonal to it. The opening of the fixed reticle shield 113a is located in the projection optical system pL. The center of the circular field of view forms a slender or rectangular shape that extends linearly, and its formation direction is the χ-axis direction that is orthogonal to the moving direction (γ-axis direction) of the reticle 1 during scanning exposure. 'Scanning exposure at the beginning and end is further limited by its movable reticle mask 113b to avoid exposure of other parts. The movable reticle mask 113b is not shown by a drive system (not shown). Control system to control. Here, the function of the illumination system including the light source 101 and the illumination unit IL1J is briefly described. The light beam (laser beam) in the vacuum ultraviolet range emitted by the light source 101 is shaped by the beam shaping optical system 21 in the beam path 102, Into the lighting unit ILU. The light beam entering the illumination unit ILU passes through the diffractive optical element 6a (or the diffractive optical element 6b) constituting the diffractive optical unit 106, passes through the relay lenses 107, 109, and the reflective mirror 108, and enters the fly-eye lens. 110. The fly-eye lens 110 converts the exposure light EL with a substantially uniform intensity (illumination) distribution. In addition, after passing through any aperture stop of the illumination aperture stop plate Π1 disposed near the exit surface of the fly-eye lens 丨 丨 0, the exposure light source EL passes through the relay lens 112 to illuminate the constituent target with uniform illumination. The reticle shutter mechanism BL fixes the reticle shutter U 3a. The exposure light el passing through the opening of the fixed reticle shield 113a passes through the movable target 200423224 reticle shield 113b, and then passes through the relay lens 114, the f-curve mirror n5, and the focusing lens 116 to illuminate with uniform illumination. The predetermined lighting area on the reticle r (extends in a straight line; ^ 'p A, the slit-shaped or rectangular lighting area in the X-axis direction). In addition, when using the light in the vacuum ultraviolet region as the exposure light, it is necessary to exclude gases such as oxygen, krypton vapor, and hydrocarbon systems from its optical path, that is, gases with strong absorption for the above-mentioned wavelength band light ( Hereinafter, it is appropriately called "absorptive gas"). Because & 'In the present embodiment, the internal system of the m-system casing m is filled with a gas having a weaker absorption capacity than the absorptive gas, such as nitrogen or gas 1 n, rare gases such as oxygen, or mixed gas (hereinafter, Called "low-absorptivity, ^ ,, m • sigh rolling"). As a result, the concentration of the absorbent gas in the lighting system case 105 becomes several ppm or less. In this embodiment, the internal optical path of the light source 101 and the light-transmitting optical system ι02 is also filled with a low-absorptive gas at the same time as the above-mentioned photo 1G5. The exposure light EL of the illumination unit ILU emits $ The telescopic sealing mechanism (air box) 18 is provided with the lighting system as the i-th photomask platform: platform 2. Below the lighting system-side platform 2, through: the telescopic sealing mechanism between the projection system PL (Wind box) 29 is provided with a projection system side platform 3 serving as a first mask platform, and a plurality of (here, root) support columns (spacers) are formed between the illumination system side platform 2 and the projection system side platform 3 at a certain interval. (Spacer) 26a ~ 26d, (not shown in figure i support: 26c '26d' can refer to 4A, 4B), the projection system side plane is an unillustrated support member located on the floor of the clean room by i The upper 24 is supported horizontally. The above lighting system side platform 2 and the happy platform 3 'cast by materials such as natural stone, ceramics, or stainless steel are respectively ground and the projection of the lighting system side platform 2 are ground and polished. Become the top of 1 flat mouth 3) Also, flat ... The material is sky: smooth surface of stone.-The surface is coated with fluorine resin and other steam. The surface absorbs or desorbs oxygen or water. In these platforms 2, 3, it is planned to be # 古国, 〇 ^ becomes as shown in Figure 1. The rectangular opening 3a serves as a light penetrating portion through which the exposure light beam passes. ^ The reticle stage RST is disposed between the lighting system side platform 2 and the system side platform 3, and holds the above platforms, respectively. The predetermined distance, film, = Γ wide line film / can move at least freely in the direction of the γ axis. Marking port _ 6 'Poor position' is through a moving mirror set on the marking sheet stage m, through the mirror shown in Figure 1. The reticle laser interferometer 9 may blame the resolution accuracy of 0.5 to 1 nm, for example. The configuration of the reticle stage RST and the reticle laser interferometer 9 will be further detailed later. The optical system PL is a refractive optical system that uses a telecentric reduction system on both sides and has a common z-axis direction on the optical axis, and is composed of a plurality of lens elements (lenses) (~ 30K (see FIG. 7)). This projection optical system The projection magnification of PL is, for example, "Ge 1/5. As described above, when the exposure light EL of the illumination unit 7L ILU is irradiated to the circuit pattern of the reticle R, the image illuminated by the exposure light EL (equivalent to the above-mentioned illumination area) is projected by the projection optical system pL And a part of the exposure shot transferred on the wafer 25 200423224 W is reduced to form a reduced image (partially inverted image) of the circuit pattern. Among the lenses 3 0 a to 3 0 j constituting the projection optical system PL, for example, the uppermost lens 3Oa is supported at three points by a piezoelectric element PZ as a driving mechanism as shown in FIG. With these three piezoelectric elements pz, the lens 30a is driven in the optical axis direction (Z-axis direction) and a direction inclined to the XY plane. As shown in Fig. 1, one end of the projection optical system air supply line 50 and one end of the exhaust line 51. The other end of the gas supply line 5 (is connected to a supply of a low-absorptive gas (such as helium), not shown. The other end of the exhaust line 51 is connected to an external gas recovery device. The high-purity helium gas from the helium gas supply device passes through the helium gas supply line 50 and flows into the lens barrel of the projection optical system pL. At this time, the gas in the lens barrel is recovered to the gas recovery device through the exhaust line 51, Furthermore, the reason why the invention towel uses helium as its low-absorptance surname, besides the same reason as above, the optical path in the lens barrel can exclude oxygen, water vapor, and hydrocarbon system gas from evacuating the vacuum. The light source in the ultraviolet region has a powerful retracting gas, and also focuses on its excellent cooling effect. That is, in the real form: because the vacuum ultraviolet light is used as the exposure light EL, so the expansion coefficient is ㊅ Rong; 5 as the lens material constituting the pL of the projection optical system. Therefore, the temperature rise of the lens due to absorption of light exposure exposure, and the imaging characteristics of the lens. Therefore, it is best #, More nitrogen Wait for its vapor ... /, as the clean gas inside the clock of the projection optical system PL. June 26 200423224: The wafer stage w is arranged in the wafer chamber 40. The wafer 40 is formed by the projection optical system. PL ’s lens barrel is joined by a partition wall 7] to isolate the internal gas from the outside. The partition wall of the wafer 40 is made of a material with low degassability such as stainless steel (SUS). " Within the wafer 40, the pedestal is supported by a plurality of anti-vibration units: and: the level is supported. In order to prevent the vibration of the wafer stage WST from transmitting vibrations to the projection optics "PL or marking m Vibration unit 86 and two "grade insulation capacity. Furthermore, as a matter of course, it can also actively control the vibration of the base money based on the value of the -in part of the -semiconductor accelerometer and other vibration sensors. The so-called active-type anti-vibration unit is used as the above-mentioned anti-vibration unit 86. The wafer stage wst passes through the wafer holder 25 to adsorb and hold the wafer W by means of direct air adsorption or the like, for example, by A drive system not shown, such as a linear motor, can drive freely. The XY2 dimension of the pedestal. As shown in this embodiment, the vacuum ultraviolet region is used to set the exposure wavelength to 1 ^. In order to avoid the absorption of exposure light by absorbent gases such as oxygen, the light is applied to the system PL to the crystal. The optical path of ID w must also be replaced with nitrogen or rare earth 0 ^: The partition wall 71 of the round chamber 40 is connected to one end of the air supply official road 41 and one end of the exhaust pipe 43 as shown in FIG. 1. In the air supply line 41, it is connected to the supply device of low absorption gas, such as the supply of nitrogen gas. The exhaust line 43 The other end is connected to the external gas recovery dream department. Ν, Zhiyou ', as described above, keeps the flow of helium 27 200423224 gas in the wafer chamber 40. The reason for using helium as its low-absorptive gas and how to reuse helium after recovery are the same as above. A light transmission window 85 is provided on the side wall on the + Y side of the partition wall 71 from a to 40 yen. Similarly, although the illustration has been omitted, a light transmission window is also provided on the side wall of the + X side of the partition wall 71 (the deep side of the paper surface in FIG. 1). The structure of some light transmission windows is formed in the window portion (opening) formed in the partition wall 71, and is used to block the light penetrating material of the window portion, and here refers to ordinary optical glass. At this time, in order to prevent air leakage from occurring in the safety part of the light-transmitting member constituting the light-transmitting window 85, a metal seal room such as indium or copper or a fluorine-based resin is used for the installation portion. Also, as the job «resin, it is best to make ^ 80. = Heated and degassed for 2 hours. A moving mirror 56Y composed of a flat mirror is extended at the end on the + γ side of the wafer holder 25 in the x-axis direction. The length measuring laser light emitted by the Υ-axis laser interference 胄 57Υ arranged outside the wafer chamber 40 passes through the light transmission window 85 and is projected almost perpendicularly on the ¥ -axis moving mirror 56γ. Through the light penetrating window 85 'through the light of the internal sensor of the gamma-axis laser interferometer 57γ, the moxibustion can be detected based on the position of the y-axis laser interferometer; when the position of the Υ-axis laser interferometer 56γ is used as a reference, : Brother axis position. W Υ a is the same, the material is shown in the figure, and the # part on the + X side of the wafer holder 25 is extended in the Y-axis direction by a moving mirror composed of a plane mirror and the interferometer passes through the moving mirror. In the same way, the position of the private mirror, that is, the position of the wafer W6U axis. The detection values (measured values) of the above two laser stems 28 200423224 are supplied to a control device (not shown). The control device measures the detection values of these laser interferometers while passing through the wafer drive system. The position of the wafer stage WST is controlled. As described above, since the laser interferometer of the present embodiment, that is, the optical components such as the laser light source, chirp, and the sensor are arranged outside the wafer chamber 40, even if the sensor or the like described above is generated, A small amount of absorbed gas will not adversely affect the exposure. In addition, the other end of the gas supply pipe 50 and the other end of the exhaust pipe 51 connected to the partition wall of the above-mentioned projection optical system PL may be respectively connected to a helium gas supply device (not shown), which is supplied by helium gas. The device supplies high-purity helium gas into the projection optical system pL at any time through the gas supply line, and the internal gas of the projection optical system PL is returned to the helium gas supply device K through the exhaust line 51. The above method is used to form a cycle to throw helium The mechanism of Qi is also good. In this case, it is preferable that a gas refining device be built in the helium gas supply device. In this way, with the function of the two-body refining device, even if helium is in the circulation path inside the projection optical system PL including the helium supply center, after a long period of cycle use, the helium in the projection optical system PL can still be used The concentration of other absorptive gases (oxygen, water vapor, organic matter, etc.) is controlled to a few ppm or less. Also, at this time, it is also possible to set a compression lens, a lens, a knife sensor, and an absorptive gas concentration-sensing sensor in the projection optical system PL. According to the measured value of the sensor , Through the control device to determine the built-in gas θ and stop. The same wafer chamber 40 with the same starting diameter as that in the device can also use the same helium circulation path 29 200423224. Next, the structure of the reticle stage RST will be described in detail based on Figs. A perspective view of a part of the reticle stage RST is omitted, and FIG. 3 is a longitudinal sectional view of the reticle stage RST. Fig. 4A is a cross-sectional view taken along the line A-A of Fig. 3 'Fig. 4B is a cross-sectional view taken along the line B-B of Fig. 3. The holographic film stage RST is held between the lighting system side platforms 2 to 糸, and the front side platform 3 as described above, and is held on the platform 23 in a non-contact manner, respectively. This reticle stage RST, as shown in FIG. 2, includes a reticle coarse motion stage and a 'line micro motion stage 5'. The reticle micro motion stage is surrounded by the reticle coarse motion. The three directions of the soil z direction and the _γ direction are maintained. The coarse motion stage 4 for the reticle is provided with an upper plate shirt arranged at a small interval of a few micrometers below the lighting system side platform 2 and a lower plate portion 46c arranged at a small interval of a few micrometers. The earth surface on the projection system side platform 3; and the middle portion 46b are located between the upper plate portion and the lower plate portion to connect the two. q㈣ 丨 Using back, through the support 4 members 47a, 47b is equipped with a linear motor RM1, interesting moving parts 48b (the supporting members are not shown in Figure 2 ... and moving parts, Figure 4A). The movable members 48a are driven in the direction of "via" by electromagnetic interaction with the extensions 49a, 49b. This drives the reticle coarse motion stage 4 in the direction of the γ axis. ° 1 Also, The above-mentioned stators 49a and 49b can also be supported by a rack (not shown) supporting the platform 23, however, a support mechanism (not shown) can also be provided on the floor of the clean room through an anti-vibration mechanism, thereby The support of the stator is also available. Also, the movable part. 〇u ^ ^ piece 48a, the right installation position is not 30 200423224: limited to the above lower plate portion 46c, or can be placed on the middle portion 46 "wire coarse motion stage The 4 series is similar to these movable shirts, and the body generates acceleration and deceleration following the generated thrust. Therefore, it is best to install it at a position (south direction) that can move coarsely with the reticles. 4 The overall weight and position are consistent. The center of gravity of the version In this embodiment, the ‘lighting system side platform 2 and cast 3 are respectively opposite the coarse moving load surface of the reticle, which are respectively parallel to the top and bottom surfaces of the coarse moving load M. Therefore, even if the reticle coarse movement ^ is driven by the linear motor in the direction of the y-axis as described above, the minute interval between ^ 2, 3 and the reticle coarse movement stage 4 can be maintained approximately one: the above-mentioned middle 46b As shown in ® 4B, γ-axis microactuators AC1, AC2, and χ-axis microactuators composed of a voice coil motor ㈣ are embedded. These micro-actuators are similar to the movable parts of ~ AC3, and are respectively connected to the reticle micro-motion stage 5 through the stage holders 42 :: 42b, 42c. Therefore, the micro-actuators AC1 to AC3 drive the reticle micro-movement stage 5 in the X-axis direction, the Y-axis direction, and the θZ direction (the rotation direction of the z-axis rotation). Furthermore, in this embodiment, in order to suppress the temperature rise of the microactuators AC1 and AC2, a part of the configuration is exposed outside the intermediate portion 46b to facilitate heat release. In addition, the reticle coarse motion stage 4 has a differential exhaust type gas static pressure bearing for maintaining a predetermined gap between the lighting system side platform 2 and the projection system side platform 3, and also has a differential exhaust type. The aerostatic bearing is used to maintain a predetermined gap with the reticle micro-movement stage 5, but this point will be described in detail later. 31 200423224 Returning to FIG. 2, the reticle micro-movement stage 5 includes a base Η and a partition wall M fixed on the bottom surface member 55. The bottom member 55, as shown in FIG. 4B, is formed by a handle and a rectangular opening for exposure in the vicinity of its central portion. When it is equal to the light, the exposure light EL is irradiated to the Erming area). Also, a plurality of (here, four) reticle holding mechanisms 53 are provided in the peripheral portion of the exposure opening 55a. The above-mentioned reticle holding mechanism 53 is connected to a vacuum pump (not shown) provided in the exposure device through the true line 54 and the like introduced into the bottom surface member 5 when the reticle R is placed on the reticle holding mechanism 53. The operation of the two air pumps causes the reticle R to be adsorbed and held on the reticle holding machine M. The above-mentioned vacuum line 54 is introduced into the inside of the reticle micro-moving stage 5 through a gas guide terminal of the reticle coarse moving stage 4 through a gas introduction terminal such as an f-body joint. = 、 The vacuum line 44 in the wire coarse motion stage 4 is bundled with wiring I 39 together with other electrical wiring connected to the actuary crying temple and connected to the heart. The above-mentioned vacuum pump may be installed in an exposure device, or a vacuum line from a semiconductor factory or a line for decompressed air may be used. The illustrated vacuum pump is also the same as described above. The rectangular opening shown in FIG. 3 and the light passing through the exposure light EL 55b and the two openings 55a are much larger. The partition wall 52 is provided with a side wall portion and a top plate portion having a central opening 52a provided at the upper end of the side wall portion. The rectangular opening 52a, as shown in FIG. 3, has a total area of the cutout portion between the exposure opening 55a and the irradiation opening 55b. 32 200423224 The partition wall 52 and the bottom surface member 55 form a reticle holding space%. The upper end surface of the top plate portion is formed with opposed annular grooves 58 and 59 as described later. On the outside of the holding space SS of the reticle micro-movement stage 5, on the side -X of the partition wall 52, as shown in Fig. 4B, a plane mirror 9U is provided. The light beam emitted by the reticle laser interferometer 9c provided on the X side is irradiated to the child plane mirror 91c, and the reticle microinterferometer 5c is continuously detected by the reticle laser interferometer 9c (also That is, the position of the reticle in the x-axis direction can reach, for example, a resolution of about 0.5 to 1 nm. Furthermore, the outside of the partition wall 52 (the outside of the holding space SS) is near the + γ side end of the bottom member 55. Through the safety cracking member 104b (Shenri call '..., Θ 2), a retro-reflective mirror 9ia ㈣leCtor) is provided as a reflecting member. The laser light from the reticle laser ^ 9a, 9b is irradiated to the retro-reflective mirrors 91a, 91b, respectively. = The reticle laser interferometers 9a, 9b respectively detect the position, emission, & Block: reticle micro-movement stage 5 (ie, reticle _ Y-axis square reticle :: often guarantee the resolution of, for example, 0.5 ~ 1nm. Also, according to 2 :: household line 2 · dry 9a, the difference between the detection value of the ribs and the distance between the beams will make the line sheet stiffen the stage 5 (also the direction of rotation of the furnace) rotation (deflection) " secret aspect (z-axis rotation: the person's can also be on the bottom surface) The side ends 9ia, 91 of the member 55, and the flat mirror 9lc and the inverted mirror described above are described in detail on the basis of the figure. 33 200423224 aerostatic bearing provided on the reticle coarse motion stage 4. First, the description of the formation of the reticle Differential exhaust type gas hydrostatic bearing (hereinafter referred to as "the first bearing") with a slight gap between the coarse motion stage 4 and the projection system-side platform 3. The plate portion under the reticle coarse motion stage 4 On the bottom surface of 46c, an air-supply-side annular groove 3 is formed from the inner side of the outer edge portion. An air-supply-side annular groove 3 is formed on the outside of the air-supply-side annular groove 31. 2. Air supply ㈣-shaped groove 31 ^ Pass the-end of the air supply line 37 formed in the coarse moving stage 4 of the reticle, and the air supply ... the other-end is connected to an unillustrated = supply device. Also, Exhaust-side annular groove 32 through reticle coarse movement stage 4

The exhaust pipe 36 formed in the inside is connected to one end of the row QQ A according to the main row 38, and the other end of the exhaust pipe 38 is connected to a vacuum pump (not shown). There is milk. Therefore, in this embodiment, the nitrogen or rare gas delivered by the gas supply device through the air supply is high, and the low-riding gas passes through the supply line formed in the coarse movement stage 4 of the reticle. The total 卞 + mountain hole of the mountain & the road 35 is fed by the gas-supply-side annular groove 3], and the gas on the exhaust-side annular t ^ ^ monk dl-shaped groove I exhaust pipe 3Λ is passed through The exhaust-side ring riveting hole s-path 36 and the exhaust pipe 38 are exhausted by suction of a pump (not shown). Fu Zhizhi — ^ ^ f ,,,,,, °, can make the reticle coarse dynamic load A 4 at a regular distance, suspended on the projection system side platform 3, and can form a distance from the inside 内 within the gap of = 4 (Dotted arrow) to prevent the airflow in the outer side groove 32 (refer to FIG. 3, the external clock into the gas (oxygen, water vapor) from the stage 4 coarsely moves the jr text into the eta side of the reticle). By the above-mentioned / _ the inside of the carrier 4 (that is, the opening bearing.) /, The following plate portion 46c substantially constitutes the first shaft 34 200423224 4 and the static pressure bearing of the lighting system side platform (hereinafter referred to as the next, details Differential exhaust type gas second bearing with air-tightening function between the reticle coarse moving stage "). = The upper part of the upper plate part 46a of the traverse coarse movement stage 4 is formed with a supply shaft inside the outer edge. The groove 27 on the outer side of the groove 27 is formed with an annular groove 28 on the exhaust side. A material groove 27 is provided. The annular groove on the milk supply side 2Y is a gas-supply pipeline formed in the carrier port 4. % Connected to the above-mentioned driver two: one end. Also, the exhaust-side annular groove 28 is thick through the reticle: load: 4 :: the exhaust pipe formed is connected to the above-mentioned exhaust pipe: 8 Gossier 22 The gas supply device transmits low-absorptive gases such as nitrogen through the gas supply pipe 37, and carries the coarse dynamic load through the reticle: The gas pipe 35 is ejected from the gas-supply-side annular groove 27, and The gas also passes through the annular grooves 28, ::, and the exhaust pipe 38 on the exhaust side, and is exhausted by a suction force of a vacuum system (not shown). As a result, # 始 μ Flat ... Coarse movement stage 4 and the side of the lighting system maintain a predetermined distance, and an airflow measured from the inside to the outside can be formed within the predetermined distance (refer to the dotted arrow in Fig. 3). Therefore, external air can be blocked (Oxygen, water vapor) is formed by the reticle coarse moving stage 4 (the opening 4 "). As disclosed above, the entire plate portion 46a substantially constitutes a second bearing. Next 'Describe a differential exhaust-type gas (referred to as a "third bearing") formed between the lower plate portion 46c of the reticle coarse motion stage 4 and the reticle micromotion stage 5.) On the lower plate portion 46c of the reticle coarse movement stage 4, an air-supply-side annular groove 33 is formed on the outside of the opening 35, 200423224, and further outside ^, her ~ ^, and chaotic side nuclear groove 33. ^ Bu side opening / groove exhaust side annular groove 34. The air supply is formed at one end of the gas supply line 35 in the coarse motion stage 4 of the reticle with L =… 7. In addition, the exhaust-side annular groove% is the exhaust pipe in the coarse-moving stage 4 of the diaphragm at the 軚 -end. Therefore, the gas supply device transmits = upper two ^ ^ or a rare gas such as a rare gas, and penetrates to form: :::: nitrogen ... supply pipe ... supply-side annular groove: = _ 台 exhaust side annular At the periphery of the groove 34, the ㈣ 'at 34, the exhaust battalion narrow and the ceremonial limbs' pass through the exhaust side annular groove gravity At and the exhaust f38' through the un-dagger, only occasionally, due to the ring The groove 33 34 ^ The lower end surface of the thread micro-movement stage 5 is close to the target due to the condition, and is subject to the slot ..., one side lifts the target line and the second slot loads = shoots around it. That is to say, subjecting the groove to the micro-movement of the reticle by the above-mentioned grooves ... acting at a small distance, the stage 4 can achieve a close configuration (upward support): death :: the reticle is coarsely moved between the loading slots 34, Due to the formation of a dashed arrow from slot 33 to slot 33, it is free from external air (gas: gas flow (see Figure 3 for the outside of the moving stage 5 to intrude into the marking strip 7) Second gas: field marking strip The side of the space of the micro-marking line "⑽ reveals the interior of V, (that is, used to ensure the formation of the third fine bearing. The substantial movement of the substantial part of the lower plate 46c is carried on the & coarse-movement stage 4 Between the plate portion 46a and the reticle, a differential exhaust type gas-static 36 200423224 pressure bearing (hereinafter referred to as a "fourth bearing") having a gas-tightening effect. The upper plate of the reticle rough movement stage 4 An air-supply-side annular groove is formed on the outer side of the lower portion of the portion 46a, and an exhaust-side annular ring 59, ::, is formed on the outer side of the opening cut. The annular groove 59 on the exhaust side is transparently connected to the exhaust pipe in the coarse feeding stage 4 described above. The exhaust pipe is connected to the second line at the end of the marked line. Tube] or a low-absorptive gas such as a rare gas, which is formed by a special gas supply pipe 35 in the 4 and is formed by a gas-supply-side annular groove, 5Γ = a coarse moving stage gas-side annular recess The gas around the tank 59 is exhausted through the exhaust pipe 36 and the exhaust pipe 38, and the breast: Read the groove 59 to exhaust.… The attraction of the two pumps, the ring here The upper end of the reticle micro-moving stage 5 is shaped like a "groove" on the upper end of the reticle coarse-moving stage 4 and the upper plate portion 46aJ of the reticle coarse-moving stage 5 is an annular groove 58 and a ring. The grooves are formed between the grooves μ; m ′ and the air flow (refer to the cliff and line arrows in FIG. 3). Therefore, ^ L to the groove 59, water vapor can be blocked) from the reticle micro-movement stage 5 outside air (The inside of oxygen 5 (that is, the method for holding the reticle only ~ the stub moving platform method, the upper plate portion 46a essentially constitutes the 4 :: 2 side). As disclosed, the `` reticle is thick The dynamic stage 4 and the momentum of the graticule are based on linear motors, and the compensation is for the slight movement when the graticule = the relative displacement of the port 5. Specifically, there are only a few " the position of the movable stage 4 is right. Therefore, set At 37 two The bearings between the bearings (that is, the rough moving load a 4 pairs of Bu +, brother 4 bearings) do not need to be too high, the marking line only needs a small amount of gas injection and suction: the bearing capacity is carried out, gas) 'Yes The time is fully compatible with the inner and outer sides. When the two-faced eight-knife knife / moon and air tightness are arranged close to each other, the 4 and the reticules are slightly moved ... There may be no coarse reversing of the reticles. Bearings (ie, 3rd and 4th bearings). The 4th ~ 4th brothers of the bearings described above are supported by non-contact methods on each carrier, and can be dropped into the halves from the outside. The gas passes through the coarse motion stage 4 of the reticle and the lighting system side ^ ee .κ 〇2 and the platform 3 side of the technical film system, and the coarse motion load of the reticle △ ρκ port and the micro motion stage 5 Between the gaps, k enters the holding space of the reticle R. Here, as shown in FIG. 3, the milk supply mechanism used by 々 々 H H ^ ^ can be used to answer the Q 7 ^ r of the supply to the coarse motion stage 4 of the thread, read,… η, Part of the flowing nitrogen or rare gas passes through the coarse movement stage 4 of the thread guide, and the divergence within the 4 l + a 991 Q0lu 4 is diverted from the gas supply branches 221a, 221b of the gas supply line 35, and is taken from the production unit. A gas is flowed into the openings of the openings 4a and 4b of the bismuth wire coarse-moving stage 4 to allow nitrogen or rare gases i,, and to be contained in the holding space SS. On the other hand, the exhaust mechanism used can pass through the old milk discharge branches 222a, 222b of the divergent self-exhaust pipe 36, and from the side walls of the openings 4a, 4b, the space will be maintained. The gas is vented. With the above-mentioned gas supply mechanism and gas exhaust mechanism, in addition to the above-mentioned air-tightening effect, it is more conducive to replacement in the space of the reticle ^] holding space with low-absorption nitrogen for exposure light or Rare gas. Furthermore, a gas supply branch pipe such as 221b may be provided between the gas-supply-side annular grooves 58 and 33 and the opening π 4a and 4b. 38 200423224 As mentioned above, the reticle R is adsorbed and held by the reticle holding mechanism 53 located near the exposure opening 55a on the reticle stage 5). . The reticle R, as shown in Fig. $, Depicts the case 61 to be transferred onto the wafer w in the central pattern area PA. The circle and private road pattern 61 is a phase-shifting pattern, which is composed of 3 to 5 penetrating patterns arranged on the background of the light-shielding part and having a length of 3 to 5 in the Y-axis direction and the X-axis direction as the long side. In each of the penetrating patterns, the phase of the penetrating light of the penetrating portion is inverted at every other root to form a phase-shift reticle pattern. In addition, after this pattern is transferred to the crystal circle ^, the transparent portion 肖 between the penetrating portion and the penetrating portion of the towel 61 becomes the gate of the transistor. Therefore, in the reticle of mesh 5, the gate direction (long side direction of the gate pattern) transferred to the wafer W is aligned with the X-axis direction. Next, the exposure operation of the exposure apparatus 100 configured as described above will be briefly described. First, set various exposure conditions. In this embodiment, as described above, the phase-shifting reticle R shown in FIG. 5 is used for exposure. Because 2 is used to illuminate the exposure light of the reticle R, the resolution and depth of focus are considered. It is better to use the illumination light with small coherence (σ value), that is, the illumination light with smaller incident angle range of the reticle. When using phase-shift reticle R for exposure, the The control device shown in the figure sets the σ aperture Ua on the iris aperture plate U1 near the exit surface of the fly-eye lens 1102 to the optical path of the exposure light EL, and at the same time reduces the opening of the σ aperture to become Small σ lighting conditions. The control device is a diffractive optical element 6a 39 200423224 set on the optical path 'so that the transmitted light beam has a small divergence angle as a diffractive optical element that guides the exposure light EL to the σ aperture 11 a. Based on this, the numerical aperture of the reticle bright beam alignment reticle R is set to be small. Afterwards, under the management of a control device (not shown), alignment is performed using an unillustrated reticle alignment system and an unillustrated off-axis alignment sensor (〇ff — alignment sensor). Film preparation, basic line measurement of positioning sensor, etc. After that, under the tube Z of the control device, the wafer w is subjected to enhanced global wafer alignment (EGA, ie, enhanced global alignment) with the alignment sensor. After completion, a plurality of exposures on the wafer f are obtained. Arrangement coordinates of the irradiation area. In the above-mentioned manner, after the exposure preparation operation for the wafer w is completed, the amount of the x-axis laser interference and the x-axis laser interferometer 57γ is measured by the control device i (not shown) according to the above-mentioned pair. Measured value—While moving the wafer stage WST through the wafer driving system, it reaches the start position of the acceleration tracing for the first exposure irradiation (the first exposure irradiation area) of the wafer w). Then the control device uses the reticle drive system and the wafer drive system to cause the reticle carrier 纟 and the wafer stage WST to start scanning in the γ-axis direction. When the two stages RST and WST reach the target scanning speed, that is, Beginning with the pattern area of the light-marked line R, scanning exposure gold is started, and j: t "During the exposure, the illumination light emitted by σ light ㈤1 la is in the state shown in Figure 6a ( In FIG. 6A, the oblique line area is the area where the illumination beam is wide, and the product area is the area where the energy density of the exposure light is high. (2004 200423224). This is because the phase-shifting reticle R of "5" is used to perform At the time of exposure, its illumination state is caused by the illumination light being concentrated in a small circle (small π illumination) near the optical axis. Furthermore, as shown in Figure 1, the reticle is only available. There is between the light ia The curved mirror 115, so the Γ direction in FIG. 6A corresponds to the z direction 0 in the figure. Then, the pulse pattern is used to sequentially illuminate the reticle " with different pattern areas: or 'After completing the full illumination of the pattern area , That is, the scanning exposure of the first exposure irradiation area on the wafer boundary is completed. Therefore, the circuit pattern of the reticle R is reduced and transferred through the projection optical system PL to the photoresist layer of the ith = irradiation area on the wafer w. The scan of the first exposure irradiation area is completed. The control device shown in the figure moves the wafer carrier ST in the X-axis direction in a stepwise manner (that is, the step between the exposure irradiation areas is performed.-The exposure start acceleration position (scanning start position) of Daddy 2 exposure point) Line η: :,: With the control device not shown, the second exposure irradiation area is scanned in the same way as above. Reverse the exposure in the manner described above, and mark the lines for scanning the exposure irradiation area on the & Step of the exposure irradiation area until the exposure irradiation area. 2 α case sequentially transferred to the wafer w shaming as the new \ All new exposure areas on the wafer w: Γ Wafer loading ... that is, wafer exchange, in exchange for Γ two! = Placement of unloaded wafers and loading of new wafers through a robotic arm for wafer exchange not shown. 41 200423224 Again ' During the above exposure operation P 动作 I >. Stroke period 'due to formation in Figure 5 R The circuit pattern is the same as the long-side direction. The phase-shifting pole-soul pattern is 1 ^ ^ in the γ fine direction, so the penetrating light will be diffracted by the line pattern. Role, and the main thing, less machine W ^, .... As a result, the energy distribution of light used in the projection optical system PL will be as shown in Figure 7 + Pupil plane (system of camphor 2. Second, the main light emitted from each point on your green sheet R converges to the 1-point surface, and here there is no aperture lighthouse 63 such as a rainbow diaphragm ) The lens 30c, ㈣, heart 30f, 3Gg, 3Gh # near 30p, as shown in FIG. 6B, is a state where the exposure light is concentrated (in an offset state) in two circular areas at a predetermined distance from the optical axis. . In addition, in FIG. 6B, the two regions given with slashes indicate the energy density of the light used:

High area. X Therefore, among the 4 lenses 30c, 30d, 30e, 30g, 30g, and so on, only the portion irradiated with the exposure light is heated, that is, the heating phenomenon of asymmetric rotation is exhibited. As a result, among the lenses such as lenses 30e, 30s, 30e, 30f, 30g, and 30h, only the heated portion generates volume expansion or refractive index fluctuation. As a result, these lenses 30c ~ 30h causes a rotational asymmetric aberration, and even causes a rotational asymmetric aberration in the projection optical system PL. Therefore, 'the exposure apparatus 100 of this embodiment, in order to suppress the above-mentioned rotational asymmetrical aberration during wafer exchange on the wafer stage WST, performs virtual irradiation on the lens in the projection optical system PL. That is, on the wafer stage WST, during the above-mentioned wafer exchange, the bright light is irradiated into the projection optical system PL, so that the light amount distribution in the projection optical system PL, especially near the pupil plane 30p. The light quantity distribution (exposure 42 200423224 using this density distribution of light) shows a distribution reversed from that shown in FIG. 6B (refer to FIG. 8). “Based on this,” the lenses 30c ~ 30h near the pupil surface 30p of the projection optical system PL are displayed. The rotationally asymmetric heating (heating) state can be transformed into a rotationally symmetrical heating state as much as possible. Specifically, § 'the wafer stage WST is driven toward the wafer exchange position, and the wafer W is separated from the exposure field of the projection optical system PL by the control device' for the virtual irradiation of the aperture diaphragm plate 111 of the illumination system described above. The light disturbance 1 lb is set on the optical path of the exposure light el. In order to correspond to the setting of the aperture light board 111 of the illumination system, the control device replaces the diffractive optical element in the diffractive optical unit 106 with a diffractive tassel which can give a larger divergence angle to the penetrating light beam and has a fine gap. Diffractive optical element 613 (see FIG. 9). As a result, the light amount distribution of the exposure light EL after passing through the virtual aperture stop lib is shown in Fig. 8A. At this time, since the reticle r and the virtual illumination frame 11 b also have a curved mirror 5, the direction of γ in FIG. 8 a corresponds to the Z direction in FIG. 1. The control device drives the reticle stage rST to position the irradiation opening 55b arranged near the + γ side of the exposure opening 55a so as to approximately coincide with the penetration position of the exposure light, that is, to make the irradiation The center of the use opening 55b substantially coincides with the optical axis of the illumination optical system (which coincides with the optical axis of the projection optical system PL). At this time, since the reticle R 'does not exist on the irradiation opening 55b, the exposure light is not shielded or diffracted by the reticle r, and is incident on the projection optical system PL. Further, in the vicinity of the pupil plane 30p of the projection optical system pl, a light amount distribution as shown in FIG. 8B is formed. The light amount distribution of FIG. 8B has a similar shape to the light amount distribution of the exposure light EL after passing through the virtual illumination diaphragm 11b (FIG. 43 200423224 8A). In the manner described above, the projection optical system pL is irradiated with the exposure light EL (virtual irradiation), so that the lens in the projection optical system pL (especially near the pupil plane 30p) is heated by the dotted line in FIG. 8B to generate heat. Therefore, the light amount distribution (see FIG. 6B) 'near the pupil plane 30.1) when the wafer w is exposed and the light amount distribution (see FIG. 8B) near the pupil plane 30p during virtual irradiation are added up, That is, the lens 30 c ~ 30 h and the like near the pupil surface 30 p can be brought into a substantially uniform heating state (that is, a rotationally symmetric heating state), and the same expansion can be achieved. According to this, the "rotational asymmetric aberration occurring in the projection optical system and the system PL is effectively suppressed. At this time, although the total amount of light irradiated to the projection optical system PL is increased due to the progress of virtual irradiation, the aperture of the projection optical system is increased Rotationally symmetric aberrations, but when compensating for rotationally symmetric aberrations, the control device can micro-drive the movable lens (lens 30a * of the mesh 1 in this embodiment) to the projection optical system PL through the drive mechanism PZ. Optical axis direction to correct aberrations. After ending the virtual irradiation and lens driving in this way, a series of exposure processing steps are performed on the new wafer. After that, the control device exchanges each wafer or the predetermined At each time point of the number of wafers, the above-mentioned virtual irradiation is performed. It can be seen from the above 5 that in this embodiment, the diffractive optical unit 106 and the aperture diaphragm plate of the lighting system are used to form A mechanism for changing the lighting conditions of the lighting system, thereby changing the pattern when the pattern of the reticle R is transferred to the wafer W and when the exposure light is irradiated to the optical system PL through the irradiation opening 55b. Illumination conditions. 44 200423224 As described above, “If the exposure device according to this embodiment is used”, in the reticle stage RST holding the reticle R freely, the shape = irradiation gate 55b can make the light source for exposure El penetrates to the projection optical system and system PL without passing through the reticle. Therefore, when the reticle / pattern is transferred to the wafer w through the projection optical system PL (during exposure) ' The lenses constituting the projection optical system and the system PL, especially the lenses 30c ~ 30h near the pupil surface will be partially (uneven sentences). When the exposure is not performed when heating, the light for exposure is transmitted through the opening D55b. The lens 30c ~ 30h 'can heat the portion of the lens 30c ~ 30h that was heated purely during the above exposure, and as a result, the non-uniformity of the heating state of the lens can be reduced. As a result, for the above lens · ~ 3Qh Aberrations that are difficult to correct in the projection optical system PL caused by uneven sentence heating, that is, rotational asymmetric aberrations that are not centered on the optical axis, have the effect of suppression. At this time, in the projection optical system PL, Although rotationally symmetric aberrations occur, Since the exposure device 100 includes a driving mechanism PZ, the lens 30a constituting the projection optical system pL can be driven in the optical axis direction (z-axis direction) of the projection optical system PL. Therefore, the projection optical system PL is driven by the driving mechanism PZ. The inner lens 3 ′ can easily correct the above-mentioned rotationally symmetric aberration. The exposure device 100 includes an illumination system-side stage 2 and is arranged on a reticle stage through a predetermined gap] rST illumination On the system side, an opening 2a is provided in a part thereof to allow the exposure light EL to penetrate, and a surface facing the reticle stage RST is used as a movement guide surface of the reticle stage RST; and a projection system; The side stage 3 is arranged on the pL side of the projection optical system of the reticle stage RST through a predetermined gap, and an opening 45 200423224 3a 'is arranged in a part of the side so that the exposure light source el penetrates and faces

The surface of the reticle is A RST ># &#, the moving guide surface of the reticle stage KST M m port RST is provided with a partition wall 52, which surrounds the side of the reticle stage. Around Lili D RST (mainly

Wit fruit. This π enables the vicinity of the reticle stage RST to reach a substantial distance around its mouth 2 ′ 3. Therefore, in addition to having the same effect as ^ ^ 土 土 盖 & 线 片 ^, it also contributes to the miniaturization and quantity of the device. For example, the space ss in the partition wall 52 The replacement absorbing UM and the low-absorptive gas material, in addition to covering with the next wall: = quality = τ 'can also reduce the "absorption in the surrounding space" of the marking line. On the other hand, it can also reduce the amount of gas used. It has the effect of reducing the cost. Therefore, it can be used to raise the resolution of the projection optical system PL by using vacuum ultraviolet light as the exposure iris. As mentioned above, if the exposure device 100 is used, the device can also be achieved. Miniaturization and light-weighting. Exposure of 1¾ precision can be realized. The "exposure device i 100" has a mechanism (106, m) for changing the lighting conditions of the lighting system to change the pattern when it is transferred to the wafer w, and through The irradiation opening d 55b will be used to expose the lighting conditions of the projection optical system at all times. &Amp; Hour 'by this change. The use of the mechanism can change the lighting conditions according to the pattern of the reticle R, and Exposure near the pupil plane of the projection optical system PL under this lighting condition The lighting conditions such as the energy density distribution of the light EL, and the opposite of the energy distribution density of the exposure light EL are generated near the pupil plane of the projection optical system pL during virtual irradiation. 46 200423224 According to the exposure device The exposure method performed at 100 is when the wafer is not exposed (pattern transfer of the reticle R), specifically, when the wafer is exchanged, 'the wafer is not arranged on the image surface of the projection optical system PL. In the state of w, a thermal offset state caused by the exposure of the exposure light EL in the lenses 30c to 30h in the projection optical system PL during exposure can be used as a lighting condition, in the case where the reticle R is not transmitted. Next, the exposure light EL is irradiated to the projection optical system PL for virtual irradiation. Therefore, even when the pattern of the reticle R is transferred, the lenses 30c to 30h constituting the projection optical system pL are locally generated. (Uneven sentence) heating, the virtual irradiation treatment can still be used to heat the lens 3Gc ~ 3Gh to a state where the average sentence is heated. This prevents the lens 30c ~ 30h from being heated by the unevenness of the optical member. , As a result, it is difficult to compensate the rotational asymmetric aberration of the projection optical system PL, so it is possible to maintain the good imaging characteristics of the projection optical system PL to achieve high-precision exposure. Also, in this embodiment, it is performed through the opening opening for the user. The virtual irradiation of the exposure light is performed in parallel with the wafer exchange included in the exposure step, so `` there is almost no reduction in productivity due to the progress of the virtual irradiation. Also, in the above-mentioned first embodiment, the irradiation opening 55b And exposure openings are formed separately (near the exposure openings), but the method is not limited to this, for example, the size of the scanning direction of the exposure opening ^ ^ may be extended to make the exposure openings The-part doubles as an opening for irradiation. Furthermore, in the above-mentioned first embodiment, ^ -Λ 隹 is a reticle R, 鈇 Η, which uses the long sides of the pattern in the same direction. The application of the present invention is not limited to this, and a general reticle is used. The film pattern (also ^ ^ 'has both a pattern with a predetermined direction of 47 200423224 long side direction and a direction of the long side of the pattern with a direction orthogonal to the predetermined direction within 2 $ plane) also has good results. χ, exposed pure parts are not. The combination of J σ value lighting and phase-shifting reticle is also effective when used for deformation lighting with large localized illumination light. In other words, when the reticle pattern is transferred to the wafer, the light distribution of the exposure light formed on the projection optical system light = surface, and the shape is formed on the pupil surface of the projection light: system PL during virtual irradiation. It is sufficient to distribute the illumination light 1 in the shape of light-dark inversion. In particular, when lighting with a small σ value, when the long side of the pattern is used and the reticle in the same S direction is used, the light amount distribution of the exposure light on the pupil surface of the projection optical system has the largest local Therefore, the present invention is most effective when used in such exposure conditions. Furthermore, in the first embodiment described above, the lens 30a & located at the uppermost of the lenses 30a to 30j constituting the projection optical system PL is driven so as to correct the rotationally symmetric aberration by driving in the γ vehicle direction. The application of the invention is not limited to this, and other lenses can be driven to correct rotationally symmetric aberrations. A gas chamber can also be arranged between a specific lens and a lens adjacent to the specific lens, and the pressure of the gas chamber can be changed to correct the rotation. Symmetrical aberration. In other words, when a catadioptric optical system is used as the projection optical system pL, a mirror element constituting a part of the optical system of the shirt is moved slightly in the direction of the optical axis, and the rotationally symmetric aberration can be corrected. In the first embodiment described above, openings are formed in the illumination system-side platform 2 and the projection system-side platform 3 as light transmitting portions. However, its application is not limited to this, and a transparent member may be used to form the entire platform, or it may be transparent. Structure 48 200423224 pieces to constitute the penetrating portion of the exposure light. The shadow optical system and the lighting optical system 2. The transparent member can also be modified with quartz. . In the case of using fluorite or modified SS, it is not necessary to provide any of them. In addition, it is not necessary to provide both a gas supply mechanism and an exhaust mechanism in the reticle stage RST. In addition, in the first embodiment described above, the absorptive radon is low as a differential exhaust second milk or a rare gas. However, the present invention is not limited to this. When the air supply amount of the milk supply device is directly used, It can be used that the amount of oxygen exhausted is more than that of gas. In the above-mentioned first embodiment, the portion between the upper plate portion 46a and the lower plate portion 46c of the coarse reticle stage 4 is formed only by the middle portion. Yilian News Agency. The present invention is not limited to this, but the other part (+ γ side) of the coarse motion stage 4 of the reticle can be added with a support column that holds the upper plate shirt and the lower plate portion 46c. To further enhance its rigidity. The gas that is returned to the soil, and the gas that is supplied to the retention space of the reticle, should preferably be made at a predetermined temperature (2rc), and the pellets have been fully removed: organic matter, water Foreign objects such as steam. In addition, each bearing in the above-mentioned first embodiment has a double structure including an air-supply-side annular groove and a gas-supply-side annular groove. The β-hook description example is used. However, its application is not limited to Therefore, if a groove with a triple structure is used, the gas is supplied from the groove located in the middle, and the gas is introduced from the other two grooves of the middle groove of the 挟, which can also have the same air-tightening effect. In addition, Wu Yongxian's 49 200423224 is also applicable if it forms two sets of the above-mentioned double structure grooves and becomes a quadruple structure bearing. That is, the number of slots of each bearing can be arbitrarily arranged. In the first embodiment described above, although the exposure light is used during the virtual irradiation, a light source in a region different from the exposure light may be used as the energy beam for the virtual irradiation during the virtual irradiation. The beam t * 3E (for example, infrared rays) used for the virtual irradiation passes through the opening 2a, the opening cut, the opening, the opening 4b, and the opening 3a, respectively, and is directed toward the projection optical system without passing through the reticle R Irradiation. At this time, if an infrared irradiation mechanism is provided in the optical path of the exposure light, a beam splitter inserted into the optical path during virtual irradiation is provided, and the energy beam (for example, infrared rays) for the virtual irradiation is made by the beam splitter. Through the above-mentioned openings, the projection optical holes are also suitable. In the above application example, before the virtual irradiation is performed, the above-mentioned beam splitter is inserted in the exposure room of the exposure light, and is then emitted through the beam splitter. Infrared: At this time, the insertion position of the beam splitter can be between the projection optical system pL and the lighting early ILU, or in the lighting unit ILU. "Second Embodiment". The second description is based on Figure 1U and Figure 11B The second embodiment of the present invention. The "*" portion is the same as or equal to the first embodiment described above, and is given the same-symbol, and further description thereof is omitted or omitted. The exposure apparatus of the second embodiment has projection optics. The structure of the system is only slightly different from the above-mentioned ^: state, and the structure of the other swords is the same. Therefore, in order to avoid repetition, the differences are used as the main points. Figure 11A All This is a schematic configuration diagram of the exposure system PL 'constituting the second embodiment. The number is 50 200423224. As shown in FIG. 11A, the projection optical system pL is introduced from the outside into the optical fiber FB (especially the insulating glass). The inner surface of the tube is coated with aluminum fiber optics — υ Souling IV, the upper system is shown in Figure Π β, along the outer edge of the lens, the optical components (such as the lens 3c, 3d) (30g) Introduce several optical fibers FBi to FBn. These optical fibers FB are connected to an infrared radiation source (not shown) located outside of the projection optical system and first PL. At this time, a complex bismuth optical fiber FB is used. The FBn and an infrared radiation source (not shown) constitute an infrared irradiation mechanism. Since the second embodiment of the present invention also uses I? 2 laser light as the exposure light, a projection optical system PL is formed, and the lenses 30a to 3 〇j is using fluorite. It is the optical fiber Pβ that constitutes the infrared irradiation mechanism. It irradiates the lens with infrared rays with a wavelength of about 6 ~ 10 // m which is easier to be absorbed by the fluorite lens (30c, 30d, 30g). The infrared irradiation source at this time, for example, can use Semiconductor lasers for compound semiconductors such as lead sulfide, lead selenide, and lead telluride. The exposure device of the second embodiment is the same as that of the first embodiment, and the pattern of the reticle R is transferred. It is printed on the wafer w. Furthermore, a control mechanism (not shown) calculates the optical components (for example, the lens 30c, which constitutes the projection optical system pL, according to the pattern or illumination conditions of the reticle used for the exposure. 30d, 30g), and based on the calculated exposure light distribution, predict the thermal bias state that should occur in the lens (30c, 30d, 30g), and correspond to the prediction As a result, an appropriate optical fiber was selected from the plurality of optical fiber FBn fields, and the lens (30c, 30d, 30g) was irradiated with infrared rays by the selected optical fiber. In addition, infrared rays can be irradiated on either the surface of each lens (30c, 51 200423224, or 3Od, 30g). The incident surface or the emission surface of the light source for exposure is irradiated on both the incidence surface and the emission surface. ~ 丨 · Please, when Dian predicts that there is a heating state shown in Figure UB ', that is, infrared light is provided by optical fibers other than _ and PBn, so that the heating state approaches a rotationally symmetrical shape. In addition, by adjusting the position of the movable lens in the projection optical system η, for example, adjusting the position of the optical axis direction of 30a ', the rotational symmetric aberration of the projection optical system and the system PL is corrected in the same manner as in the first embodiment. . As disclosed above, the pattern formed on the reticle is transferred onto the wafer W through the projection optical system PL ′ by the exposure device and method of the method that is used in the form of Taisheng 0a. (At the time of exposure), even if the lens constituting the projection optical system PL is locally (non-uniformly) added by the exposure light EL, the infrared irradiation mechanism can still be used for other lenses that are not illuminated by the exposure light source 乩The infrared rays are partially provided and heated, and as a result, the lens can be heated to a substantially uniform state. This makes it possible to prevent asymmetrical aberrations that are difficult to correct in the projection optical system and the system PL due to the heating of the uneven sentence of the lens, which has a good suppression effect. In this case, the infrared irradiating mechanism can heat the transmission, and it can also be performed during exposure. Therefore, compared with the above-mentioned embodiment, the 'asymmetric aberration of the projection optical system can be suppressed more reliably. Therefore, it is possible to maintain good imaging characteristics of the projection optical system while the exposure is in progress, and realize high-precision exposure. Infrared heating to the lens is different from heating by the contact heating mechanism (..., original) or cooling by the contact cooling mechanism. Because it is not in contact with the lens, it will not be caused by contact with the heating or cooling mechanism. 52 200423224 The lens is skewed, and there is no lens vibration caused by air cooling. Furthermore, the exposure performed by the combination of the above-mentioned illumination beam with a small illumination σ and a phase-shift reticle, or the localization of the illumination light becomes more serious ^ Illumination sometimes depends on only one exposure step. Unable to form (transfer) all circuit patterns to be exposed. At this time, according to the predetermined lighting conditions, one wafer can be exposed from the predetermined rod and wire strips. After the reticle is exchanged, the other lighting conditions can be changed to expose another pattern (double exposure) on the wafer. To form all the desired patterns. In the case of this double exposure, it is possible that the optical path length of the exposure light in the projection optical system may be changed during two individual exposures, so that the heat generation of the material accompanying the absorption exposure light source may be averaged. There are many cases where the exposure cannot be fully averaged. Therefore, the present invention can still exert an excellent effect in the case of performing double exposure. In addition, in the above embodiments, although pulse laser light sources in the vacuum ultraviolet region, such as h laser, laser, Ar2 laser, and ArF excimer laser, are used as the light source, their applications are not limited thereto. It is also preferable to use a Kβ excimer laser as its light source. For another example, there is no specific limitation on the laser light in the vacuum ultraviolet region output by each of the above light sources. A DFB semiconductor laser, an infrared region oscillated by a laser fiber, or a single wavelength laser light in the visible region, for example, It is also possible to use erbium (Er) (or both erbium and mirror (Yb))-doped optical fibers to amplify and amplify and use non-linear optical crystals to convert the wavelength to high-frequency ultraviolet light. For example, if the oscillation wavelength of a single-wavelength laser is set in the range of 1.5 · 1 ~ 53 200423224 1 · 2, it will generate a Liemenmen ° white wave with a wavelength in the range of i89 ~ ⑽⑽ or a wavelength in the range of 151 ~ 159nm. Among the 10 people we wave. In particular, when the oscillation wavelength is set to 纟 1.544 ~ 1 553 ": within the range, 8 times higher harmonics with a wavelength in the range of 193 ~ 194 will be obtained, that is, the #ArF excimer laser is almost the same as- Ultraviolet light with a wavelength; When the vibrational wavelength is set within the range of U7 ~ 1.58 ", a harmonic wave of 10 times higher than the wavelength in the range of 157 ~ 158nm can be obtained, that is, ultraviolet light with almost the same wavelength. Also, when 1 099〜1. 1 When the oscillation wavelength is 1. 〇3 ~ 1. 12 # m range, the wavelength can be 7 times higher harmonics within the range of 147 ~ 160nm, especially when the oscillation wavelength is 1. 099 ~ 1. 1 〇6 " In the range of m, you can get 7 times higher harmonics in the range of 157 ~ 158 # m, that is, the same as the laser light: almost the same wavelength of ultraviolet light. At this time, a single wavelength oscillation mine For example, an optical fiber laser doped with a mirror can be used as the light. In addition, when the light source of the projection optical system PL is an ArF excimer laser light source or a KrF excimer laser light source, most of them are constituted by refractive optical elements (lens elements). Refraction systems, however, are mainly used when using & laser light sources, A. laser light sources, etc. The group of refractive optical elements and reflective optical elements (concave mirrors or beam splitters) disclosed in Japanese Patent Application Laid-Open No. 31 and corresponding US Patent No. 5,220,454 is also known as a refracting system ( catadioptr ic), or a reflective optical system consisting of a reflective element and a vj element. However, when using an F2 laser light source, a refractive system is used. As mentioned earlier, a refracting optical system is used as the projection optical system.

PL 54 200423224 The above lenses can also irradiate elements (for example, concave mirrors, the above-mentioned infrared irradiation range may not be limited to the reflective optical beam splitters, chirps, or flat mirrors included in the refracting optical system). The object of illumination is the reflective surface of a reflecting mirror such as a concave mirror or a flat mirror. The point that the infrared light that you want to use is in the wavelength range where the reflective surface can be greatly absorbed should be self-explanatory. For example, the reflective surface has been coated ^ 'I hope that the wavelength of the infrared rays used is low in reflectivity to aluminum, that is, in the wavelength range of 700 to 900 nm where the absorption is large. In addition, the irradiation surface of the mirror with infrared rays is not limited to its reflective surface.' It is performed on the back or side. At this time, as in the above case, the deformation of the mirror caused by the heating of the mirror caused by the exposure light can be offset by the irradiation of infrared rays to achieve the uniform heating of the mirror. In addition, it is also desirable to use infrared rays that irradiate the above-mentioned back surface or side surface of the mirror in a wavelength region that has a large degree of absorption in this part. As mentioned above, the lenses, mirrors, and grate that constitute the projection optical system are heated by irradiating infrared rays. When the optical components (optical 7L elements) are heated due to the absorption of exposure light, the projection optical system is also well maintained. The imaging state is performed. Because Λ, it is possible to maintain a good imaging state of the projection optical system as long as it is possible to set the internal temperature distribution of each optical member (lens, mirror, 稜鏡, etc.) to a predetermined relationship. Even if the internal temperature of all optical components is not completely heated, that is, when the temperature distribution changes in a given optical component (lens, reflector, ridge) caused by absorption of exposure light, it seriously affects the projection optical system. In order to obtain uniform projection, it is possible to avoid irradiating infrared rays on the given optical structure 55 200423224 pieces. Instead, irradiate infrared light to other optical components to obtain projection optics. The good imaging performance of the entire system. Also, in the above-mentioned embodiments, an example of the configuration of the reticle stage RST is shown on the lighting system side platform. A reticle coarse motion stage 4 and a reticle micromotion stage 5 are provided between 2 and the projection system side platform 3. The reticle micromotion stage 5 is surrounded by the reticle coarse motion stage 4 The three directions of the direction and a γ direction are maintained in this state, however, the configuration of the present invention is not limited to this. For example, a partition wall of the reticle coarse movement stage 4 in the ~ Z direction may be provided with There is an opening for the reticle micro-motion stage 5 to be inserted. The reticle micro-motion stage 5 is supported by the non-contact method of differential exhaust for the reticle coarse-motion stage 4 and the projection system side platform 3. &amp; When the reticle micro-motion carrier 5 also has the function of the reticle coarse-motion stage, the-part of the projection system side platform or the lighting system side platform can also constitute a spaced Ikeda covered around the photomask. t…, /… “… m, Jiao Ke) also need β VIII: the difference between the first source. When using an ArF excimer laser light source or a μ ^ knife laser light source, both synthetic quartz and fluorite can be used. However, when using a vacuum ultraviolet light source such as 2 fields, all fluorite must be used. In addition, in addition to the wall stone 1 and the second Γ, m fluoride storage and fluoride single crystals of fluoride materials can be used: ": Shao's composite gaseous crystals, Zhong-zhao-ming's composite gasification force-lanthanum-scandium composition Fluorinated glass, Fluorine-doped quartz gas, Quartz glass with Γ added, Quartz glass with 0H group, Quartz glass with 0H group, Quartz glass with fl group, etc. Furthermore, in the above-mentioned embodiments, although The scanning exposure device of the step-scan type 56 200423224 is used as an illustrative example of applying the present invention, but @ ， 理 所 洛 然:, the scope of application of the present invention is not limited to this. Also #, step repeat: The reduced projection exposure apparatus is also applicable to the present invention.-Furthermore, the exposure apparatus disclosed in the present invention such as the "exposure apparatus 4 100 of each of the above embodiments", "at the time of manufacture", is an illumination element composed of a plurality of lenses. 、 The projection optical system is assembled by the exposure device body to perform optical adjustments. And a wafer stage (including a standard stage when scanning type is used) composed of most mechanical components is installed on the exposure device body, and the connection line or piping is installed. By the lighting system side platform 2 The partition wall composed of the projection system side platform 3 and the wafer chamber 40 is connected to the gas piping, and control systems such as control devices (not shown) are connected to each department &amp; comprehensively (electricity, motion (Confirmation, etc.) to manufacture. X, the exposure device is best manufactured in a clean room where / Jm_ degree and cleanliness are controlled. "Element Manufacturing Method" I wish to use the above exposure device in the lithography step. An embodiment of the method for manufacturing a device. Figure 12 is a flowchart of a manufacturing example of a device (such as a semiconductor wafer such as an IC or an LSI, a liquid crystal panel, a CC-D, a thin-film magnetic head, or a microcomputer). Don't worry, Baixian, in step 201 (design step), the function of the component can be set to ten (for example, the circuit design of semiconductor components, etc.), and the design of the map with the delay force. In step 2 (mask making step), a mask containing a design circuit pattern is produced. On the other hand, in step V 203 (Japanese yen manufacturing step), a time-honored material is used to manufacture a wafer. Person at step 204 (wafer processing In step), the mask and wafer that have been prepared in step 57 200423224 201 to step 203 are used, and the next day is 0, and the actual circuit is formed on the wafer by lithography technology as described later. Then, in step 205 (unit-packing step), the wafers processed in step 2G4 are used for ㈣. In step 205, processes such as cutting, bonding, and wafers are included as necessary. Θθ In step 206 (inspection step), the component completed in step 205 is tested for operation confirmation and durability inspection. After the process is completed, the component is completed and shipped. As shown in FIG. Example of the detailed production process of the above-mentioned step in the device. In FIG. 13, step 211 (oxidation step) is to oxidize the wafer surface? Step 212 (CVD step) is to form an insulating film on the surface of the wafer. Step ⑽ The electrode formation step) is to form an electrode by vaporizing ore on the wafer. Step 214 (ion implantation step) is implanting ions into the wafer. The above steps 2 to 2 "constitute the pre-processing processes of each stage of the wafer processing, and are selectively implemented in each stage depending on the required processing. In each stage of wafer formation, the above-mentioned pre-processing process is completed, as follows The post-processing process is generally performed. The steps of the post-processing process are firstly applying a photosensitizer to the wafer in step 215 (photoresist formation step). Then in step 216 (exposure step), the above-mentioned implementation is performed. In the form, the exposure device and the exposure method of the present invention transfer the circuit pattern of the photomask to the wafer. Then, 'the exposed wafer is developed in step * 217 (development step), and the step is engraved) In the process, ㈣ is used to remove the remaining photoresist (except the component), and in step 219 (photoresist removal step), the unnecessary photoresist is removed after being carved into a coin. 58 200423224 Round repeated implementation These pre-processing processes and post-processing processes form multiple circuits on the wafer. ^ ^ The device manufacturing method of the present embodiment disclosed above is used in the exposure process (step 216) in ... The exposure method and method of the exposure mode can maintain high-precision exposure. Therefore, for highly integrated precision components with fine patterns, production efficiency can be improved. K is to further improve the performance of c_m0s-lsi. The Shi Xi wafer used is also right-handed: the ancient μ ^ [111] is the same as the axis of the silicon wafer surface and the crystal axis, that is, the <⑴> plane of the wafer surface and the crystal plane is the same Wafer: such as 'In the above-mentioned device manufacturing process, when using the surface of the wafer and the crystal plane of Shixi ::: the same wafer', hope that M. &quot; Electricity of the crystal = shift: direction, and "crystalline ⑽] the direction of the axis or its equivalent ixr represents the exponential order of the axis has been replaced by the heart symbol = that is, the gate electrode of the better M0S transistor 〖20-degree interval mouth tea "long side knife direction" Although the essence of the pattern产 关 # Because it is drawn on the edge of the reticle of the reticle R, the fine pattern is the most square), so it is essentially limited to the same: Fang Qian: On the reticle. Therefore, in order to improve the performance of C-M0S-LSI In the case of <111> φ-shaped wafers on the crystal plane ^ The wafer surface is identified by the transfer gate pattern 59 200423 In the exposure process of 224, because the long sides of the pattern are side by side in the same direction, the rotation asymmetric heating and aberration of the projection optical system are particularly significant due to the absorption of light. Therefore, in the second embodiment described above, The effects of virtual irradiation and infrared irradiation implemented in China are the most obvious. Furthermore, it is needless to say that in the above-mentioned manufacturing process, an axis perpendicular to the surface can also be used, which is approximately the same as the [110] axis of the crystal axis. At this time, the movement direction of the electrons and U (positive hole) of the M0S transistor should preferably be consistent with the y-axis direction or the equivalent axis direction of Shi Xi crystal, which is conducive to the movement of electrons and holes. degree. Therefore, the long side direction of the closed electrode pattern of the MOS transistor should preferably be the same as the [211] axis direction orthogonal to the [110] axis or its equivalent axis direction. As previously described, it is sometimes better to make the gate patterns side by side in the same direction. At this time, by the above-mentioned virtual irradiation and infrared irradiation, a high-precision pattern can also be formed. In addition, as mentioned above, the wafer whose surface of the wafer is a crystalline (结晶) surface is not limited to the bulk wafer of Bai Zhi. It can also be, for example, I (Silicon ⑽Insulator), that is, there is a stone on the insulator. ) Wafer. When using a soi wafer, 'the surface portion' also refers to the crystal circle between the surface and the <⑴> plane of the crystal. As explained above, the exposure device and exposure method of the present invention are very palatable when the pattern formed on the photomask is transferred to the photosensitive object through the projection optical system. X, the device manufacturing method of the present invention is suitable for manufacturing a micro device. 60 200423224 [Brief description of the drawings] (I) Schematic part f 1 Figure ′ is a schematic view showing an exposure apparatus of the first embodiment. Figure 2 is a perspective view showing one of the graticule stage and its vicinity omitted. Figure 3 of 1 knife is a longitudinal sectional view of a reticle stage. Figures 4A, 4B, 4A are the sectional views taken along line A_A in Figure 3, taken along line B-B. Fig. 5 is a plan view showing a sheet (phase-shifted reticle) used in the exposure apparatus of the i-th embodiment. Figures 6a, 6B, and 6A are diagrams showing the light quantity distribution of the illuminating light beam emitted from the illumination aperture stop ® ® 6b is a diagram showing the biased state of the light source for exposure in the lens in the projection optical system. Fig. 7 is a graph showing the energy distribution of the exposure light in the projection light science system PL. 8A and 8B, 8A is a light quantity distribution diagram of an illumination beam emitted from an illumination aperture stop during virtual irradiation; 8B is a diagram of a state of exposure light of a lens in a projection optical system during virtual irradiation. Fig. 9 is a diagram showing a diffractive optical unit. Fig. 10 is a diagram showing an iris diaphragm. Figures 11A and 11B '11A is a diagram showing the structure of a projection optical system according to the second embodiment; ΠB is a diagram showing an arrangement of optical fibers introduced into the projection optical system. Fig. 12 is a flowchart for explaining a method for manufacturing a device according to the present invention. FIG. 13 is a specific process example of step 204 in FIG. 12. 61 200423224) Element representative symbols 3 2a, 3a, 4a, 4b, 55b 4 5 6a, 6b 6c 9, 9c 11a lib 11c 18, 29 21 25 26a ~ 26d 27, 31, 33, 58 28, 32, 34, 59 30a ~ 30j 35 36 37 38 Illumination system side platform projection system side platform opening reticle coarse movement stage reticle micro movement stage diffraction optics optical element holder reticle laser interferometer σ diaphragm virtual irradiation Sealing mechanism (wind box) with diaphragm drive device Beam shaping optical system Wafer holder Supporting column Air supply side annular groove Exhaust side annular groove lens Air supply pipe Exhaust pipe Air supply pipe Exhaust pipe 39 Wiring Beam 62 200423224 40 41, 50 43, 51 42a, 42b, 42c 46a 46b 46c 47a 48a, 48b 49a, 49b 52 52a 53 54 55 55a 55b 56y 57 58, 59 61 63 71 Wafer chamber supply line Exhaust line Holding member Upper plate part Middle part Lower plate part Support member Movable stator Partition wall Rectangular opening reticle Retaining mechanism Vacuum line Bottom member Exposure opening Exposure opening Exposure moving mirror Y-axis laser interferometer Ring groove Circuit pattern Aperture stop Next door light Transmission window 63 85 200423224 86 Anti-vibration unit 91c Plane mirror 91a, 91b Inverted mirror 100 Exposure device 101 Light source 102 Light transmission optical system 103a Beam expander 103b Cylinder lens 104a, 104b Mounting member 105 Lighting system housing 106 Optical unit 107, 109 Relay lens 108 Reflector 110 Optical integrator (Flying lens) 111 Illumination aperture diaphragm 112, 114 Relay lens 113a Fixed reticle shield 113b Moveable reticle shield 115 Curved reflector 116 Concentrator 221a, 221b Air supply branch pipes 222a, 222b Exhaust branch pipes ILU Lighting unit PL, PL, projection optical system 64 200423224 RST reticle stage WST Wafer stage EL Exposure light source RM1, RM2 Linear motors AC1, AC2 , AC3 micro-actuator PZ piezoelectric element SS reticle holding space FB fiber PA pattern area

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Claims (1)

Scope of patent application: • An exposure device based on a combination of illuminating light masks with a combination of daggers and soil, which will form a percentage of the animal — ', the pre-existing system is transferred to a photosensitive object, which is particularly characterized by: With the light system, the light beam is illuminated with the energy beam; &quot; The mask carrier port is formed with an opening, and in the case of not transmitting through the light mask: let the energy beam for virtual irradiation penetrate to the projection An optical system having at least a part of a partition wall surrounding the photomask to isolate the photomask from the outside can hold the photomask and move freely. 2. According to the scope of the patent application, the pattern is transferred to the optical system side of the photosensitive object in one of the openings of the mask stage. An exposure device according to item 1, wherein the component can also serve as an exposure opening, and when it is on, the energy beam penetrates to the projection. 3. As for the scope of patent application! The exposure device according to the item, wherein the light: stage is used to transmit the energy beam to the exposure opening on the side of the 4 projection optical system when the pattern is transferred to the photosensitive object, and is separated from the opening. form. (For example, the exposure device of scope 3 of the patent application, in which the area where the developer irradiates the energy beam on the photomask when the project is projected on the photosensitive object is approximately equal in size. 5. If the scope of patent application The exposure device of item 1 further includes a changing mechanism for changing the lighting conditions. When the pattern is transferred to: a light-sensitive object, and when the energy beam is irradiated through the opening as a virtual irradiation energy I beam. 'Change the lighting conditions of this lighting system. 66 200423224 6 · If the exposure device in the scope of patent application No.5, the lighting conditions of the energy beam through the opening can ease the projection optics: the optical components in the system due to The thermally biased state plant generated by the irradiation of the energy beam 7. If the exposure device of the scope of application for the patent application item 丨, the pot is filled with a + device: /, ν 乐乐 i uncovered platform is arranged in the The lighting system side of the mask stage, a light penetrating portion for the energy beam to penetrate is provided at a part thereof, and a surface facing the mask stage is used as a light movement guide surface; The mask platform is transmitted through the predetermined second compartment to the projection optical system side of the stage, and the light penetrating part for the energy beam to penetrate is transmitted to the Fuzhong-section, and the surface facing the mask stage is made : The moving guide surface. The shift of the halberd 8. If the exposure device in the scope of the patent application No. 7 is used, the multiple T, Xi * flute 1 through the light platform and the light through the 2 light platform ^ Is a path different from the energy beam used for the virtual irradiation of the energy beam. "9 · For the exposure device of the scope of application for patent application, a spare beam splitter is inserted into the lighting system 'factory during the virtual irradiation, * 1 bite On the optical path between the Zhaoming system and the projection optical system, through the opening —... Yue 糸 K 5 5 virtual radiance energy beam is incident on the projection optical system. “Poly”, 耵 10 · If the scope of the patent application is the first one In the exposure device, the measuring beam is ultraviolet; In the #, the energy beam used for the virtual irradiation is infrared. 11. For the exposure device according to item 丨 of the patent application range, wherein the energy 67 200423224 is a fluorometer with a wavelength of 157 nm. Light, or ArF quasi-fraction at 193nm Sub-laser light. 1 2. The exposure device according to item 1 of the patent application scope, further comprising a driving mechanism to drive at least one of the optical components constituting the projection optical system in the direction of the optical axis of the projection optical system. 13 · An exposure device that illuminates a photomask with an energy beam, and transfers a pattern of a square and a photomask onto a photosensitive object, and is characterized by comprising: a projection optical system for projecting the image of the pattern onto the photosensitive object The upper and lower radiation mechanism is an infrared member irradiating an optical member constituting the projection optical system, so that the optical member can be locally heated. &Quot; ㈣ Please request an exposure device according to item 13 of the patent, in which, The two: the irradiating mechanism is to locally heat the optical member, so as to relieve the heat offset state generated by the irradiation of the light beam in the dagger in March. 1 5. The exposure device according to the scope of application for patent No. u light ^ # ^ ^ 14, wherein the Jiuyu member is a refractive optical element. 16. According to the scope of application for patent No. 14, the optical member is a reflective optical element. The exposure of the "set" of which 7. The reflection surface of infrared light 18. Infrared light 19. If the patent application scope 申请 Gule 16 exposure device, where the radiation mechanism is particularly reflective optics 70, use The infrared rays are irradiated by the back surface reflecting the energy. For example, the i 3 radiation mechanism is an exposure device for optical components such as the i 8th scope of the patent application scope, in which one part of the surface is irradiated with the infrared rays. Among them, the 68 200423224 light = part of the surface of the component is the surface portion of the optical component that is not illuminated by the energy beam when the pattern image is projected on the photosensitive object. The exposure device, wherein the optical member is a lens made of fluorite; the infrared irradiation mechanism is a device that irradiates infrared light with a wavelength of about 6 to 1 Mm to the optical member. 21 · The exposure device according to item 13 of the patent application scope, wherein: The infrared irradiator only includes a plurality of light and fibers, one end of which is arranged near the optical member to irradiate the optical member with infrared rays. 22 · If the exposure device according to item 13 of the patent application scope, it further includes a driving mechanism to drive at least one of the optical members constituting the projection optical system in the direction of the optical axis of the projection optical system. 23 · If applied The exposure device according to item 13 of the patent, wherein the energy beam is a fluorine laser light having a wavelength of 157 nm or an ArF excimer laser light having a wavelength of 193 nm. 2 4 · An exposure method, characterized in that it includes: a transfer process , Is irradiated with a photomask disposed on the first surface with an energy beam, and the pattern formed on the photomask is transferred to a photosensitive object disposed on the second surface through a projection optical system; and R? In a state where the photosensitive object is not arranged, in order to alleviate the thermal offset state of the optical member in the projection optical system due to the energy east irradiation during the transfer process, the light is not transmitted through the mask and is directed toward the The projection optical system is irradiated with the energy beam for virtual irradiation. 25. If the exposure method in the scope of application for the patent No. 24, it is further 69 200423224 The energy beam is inserted into the optical path of the process air; the irradiation process, the system is transmitted through the beam splitter to irradiate a virtual energy beam irradiation. &amp; 26. The exposure method of item 24 in the patent application scope, wherein the knowledge and shooting process is performed when the photosensitive object is exchanged on an object stage holding the photosensitive object. 27. An exposure method, comprising: a transfer process for illuminating a photomask with an energy beam; transferring a pattern formed on the photomask to a photosensitive object through a projection optical system; and a heating process for the composition The optical member of the projection optical system is irradiated with infrared rays to locally heat the optical member. … 28. For the exposure method according to item 27 of the scope of patent application, wherein the 2 thermal process is to consider the heat distribution of the light to the component caused by the energy beam irradiated in the transfer process, and heat it to make the heat distribution to The optical axis of the optical component is rotationally symmetrical. 29. The exposure method according to item 28 of the scope of patent application, wherein in the heating process, infrared light is irradiated to the optical member by a plurality of optical fibers. 30. The exposure method according to item 29 of the patent application scope, wherein the heating process is based on the thermal bias state of the optical member, and the optical member is irradiated with infrared rays by at least one optical fiber selected from the plurality of optical fibers. . 31. The exposure method according to item 30 of the patent application scope, wherein the infrared irradiated portion is a surface portion of the optical member that is not irradiated with the energy beam while the pattern image is projected onto the photosensitive object. 70 200423224 32. If the patent application is applied, the transfer process and heating process system, 33 · —manufacturing of the components are: The exposure method around item 27 is performed simultaneously. The method includes a lithography process, which is characterized in that the lithography process uses an exposure device of φ &amp; Shi Yongshen # patent scope items 1 to 23 to form a circuit pattern and one of the circuit patterns. On light-sensitive objects. 34 · If the scope of patent application, the 33th component manufacturing method, Gan |, the photoreceptor system is perpendicular to the surface of the replica, and is straight to the [m-induced side of the surface axis and the crystal axis, formed on the stone evening The long side 6 of the interelectrode pattern on the wafer is a direction orthogonal to the [11G] axis direction or its equivalent axis direction-to the direction of '3 5 In the method, the photoreceptor system is perpendicular to ^ f- .7Γ. ± L · Λ. A Shi Xi wafer that is approximately the same as the [11 0] axis of the surface axis and the crystal axis is formed on the Shi Xi wafer. The long-side direction of the open pole graph 荦 above is the same as the direction orthogonal to the [110] axis direction or its equivalent axis direction. , Pick up, Schematic: Like the next page. 71