TW200423203A - Heating apparatus - Google Patents

Heating apparatus Download PDF

Info

Publication number
TW200423203A
TW200423203A TW093101979A TW93101979A TW200423203A TW 200423203 A TW200423203 A TW 200423203A TW 093101979 A TW093101979 A TW 093101979A TW 93101979 A TW93101979 A TW 93101979A TW 200423203 A TW200423203 A TW 200423203A
Authority
TW
Taiwan
Prior art keywords
substrate
heat
hot plate
pin
heating device
Prior art date
Application number
TW093101979A
Other languages
Chinese (zh)
Inventor
Kenji Yotsuya
Yasuhiro Hashimura
Takahiro Akai
Toshiaki Okuda
Koji Sato
Original Assignee
Nissha Printing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissha Printing filed Critical Nissha Printing
Publication of TW200423203A publication Critical patent/TW200423203A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A kind of heating apparatus contains the followings: hot plate for radiating and heating the substrate to be heated; the raising pin, which is disposed at the through hole formed on the hot plate to exhibit a movable state in the vertical direction so as to move the heated substrate vertically; and the approaching pin, which is fixed on the hot plate for maintaining the separation between the heated substrate and the hot plate during the period when the heated substrate is heated. In addition, at the periphery of the approaching pin of the hot plate or the periphery of the through hole, heat-decreasing part for decreasing the radiation heat is disposed.

Description

200423203 玖、發明說明： 【發明所屬技術領域】 發明領域 本發明係有關於一種用以加熱由以近接銷或升高銷為 5代表之基板支持銷所保持之被加熱基板的加熱裝置，特別 係有關於一種當併用液晶配向膜用聚醯亞胺印刷裝置時 等’用以使利用塗布或印刷而供給到前述被加熱基板上的 膜原料溶液乾燥，俾形成薄膜的薄膜形成用加熱裝置。 t先前】 10 發明背景 以往’這種加熱裝置具有各式各樣構造，例如其中有 具有第27圖所示之構造的加熱裝置501。如第27圖所示，加 熱裝置501包含有：熱板5〇2，係用以加熱被加熱基板51 〇 者；升高銷505，係配置成可沿形成在熱板5〇2之各貫通孔 15 506上下移動，且一邊支持被加熱基板510 —邊分別使其升 降者；及，近接銷511，係固定於熱板502，並在被加熱基 板510加熱之期間用以分別保持被加熱基板510與熱板502 有預定間隔者。 當由先前步驟處理過之被加熱基板510經未圖示之搬 20送裝置搬入加熱裝置501時，這種構造之加熱裝置501會藉 處於上升狀態之各升高銷505 (第27圖中以虛線表示之狀 悲）來保持被加熱基板510，且進行被加熱基板51〇之搬遞， 以於該保持狀態下降下各升高銷505而由各近接銷511來保 持被加熱基板510，同時地，藉熱板502進行被加熱基板51〇 5 之加熱處理（第27圖中以實線表示之狀態）。當預定時間之 加熱處理結束時，使各升高銷505沿各貫通孔506上升，俾 將被加熱基板510從各近接銷511搬遞到各升高銷505，再藉 前述搬送裝置將被加熱基板505從加熱裝置501搬出（參照 例如日本專利公開公報特開2001-44117號）。 當使用這種構造之加熱裝置501，使塗布在被加熱基板 510上之例如配向膜墨水或抗蝕膜墨水等膜原料溶液乾燥 時，各升高銷505和各近接銷511等基板支持銷與被加熱基 板510接觸之處會產生環狀之乾燥不均。 具體而言，處於由熱板502賦與輻射熱來加熱之狀態的 被加熱基板510，隨著其與各升高銷505、各近接銷511之接 觸之導熱，將使局部高溫化，於被加熱基板51〇表面產生大 略圓形高溫部分，導致被加熱基板51〇上溫度不均。 再者，因為通過用以使各升高銷505可上下移動而設之 各貝通孔506之南溫上升氣流造成局部高溫化，所以也會於 被加熱基板510表面產生大略圓形高溫部分。即，通常係在 熱板502表面與被加熱基板51〇之圖示下面保持有約 0.1〜5mm間隔的狀態下進行加熱，但是由於有用以使各升 高銷505上下移動之貫通孔506存在，故被加熱基板51〇是配 置在離各貫通孔506極近距離處，且呈筒狀上升之氣流直接 到達被加熱基板510之圖示下面，導致被加熱基板上產 生強烈溫度不均。 當欲使供給到這種被加熱基板51〇上之墨水等液體乾 燥時，若被加熱基板510表面之溫度在被加熱基板51〇上各 點並不均一’則前述所供給液體將不會均勻地乾燥，而會 產生早乾_之部分與遲乾燥之部分。結果，早乾燥與遲乾 之部分’其乾燥後形成之gj形物的膜會有膜厚差。推斷 故係因為被加熱基板510上之液體會從先開始乾燥處朝遲 乾燥之處移動或者反方向移動所導致的。 因此，為防止乾燥不均，必須使乾燥過程中被加熱基 板510表面之溫度保持一定。若欲使被加熱基板510表面溫 度保持疋有一方法係在各升高銷505和近接銷511之頂 部安裝導熱率小之塑膠材料形成之尖頂物，使升高銷5〇5、 近接銷511與被加熱基板51()之制傳熱的熱難以傳遞到被 加熱基板（參照例如日本新型專利公開公報實開平6_2677 號）。 L發明内容】 發明概要 近年來，這種藉液晶配向膜用聚醯亞胺印刷裝置印刷 聚醯亞胺（膜原料溶液），再藉使用前述基板支持銷之加熱 裝置使聚醯亞胺乾燥的被加熱基板所製成液晶顯示裝置 (所謂液晶面板）漸漸傾向大型化。隨著液晶面板大型化， 愈難以使對大型化之前述被加熱基板進行加熱乾燥處理時 的酿度分布達到均一。實際上，即使是使用前述這種加熱 裝置進行乾燥之被加熱基板所製成的液晶面板，實際點亮 面板一看，依然可確認隱約有乾燥不均。 又’雖然在升高銷505和近接銷511之前端配置導熱率 小之塑膠材料，的確是具有相當程度效果，但是可確認有 則述隱約之乾燥不均，無法說是完備的對策。 此外’即使使用這種加熱裝置之構造，仍舊無法解決 k熱板之貫通孔上升之高溫上升氣流，而這將成為乾燥不 均產生的重要因素。 因此’本發明目的在於解決前述問題，可提供一種加 …、衣置’包含有用以藉施加輻射熱來加熱被加熱基板的熱 板’及’設於該熱板，且在該被加熱基板加熱之期間用以 保持该被加熱基板與該熱板有間隔的基板支持銷，其特徵 在於·可均勻地加熱由前述基板支持銷保持之前述被加熱 基板。 為達成前述目的，本發明之構造如下。 依本毛明第1怨樣，可提供一種加熱裝置，包含有用以 藉施加輻射熱來加熱被加熱基板的熱板；及，設於該熱板， 且在該被加熱基板加熱之期間用以保持該被加熱基板與該 熱板有間隔的基板支持銷，其特徵在於：該熱板之前述基 板支持銷關圍’設有用以減低由前述關㈣至該被加 熱基板之熱量的減熱部，又，藉前述減熱部減低由前述周 圍施加至該被加減板（即，前额加祕板之相對於前 述周圍的部分）之輻射熱量，財卩制由於前述基板支持銷 之接觸傳熱而產生之從板對該被加熱基板施加熱量造 成之該被加熱基板溫度上升。 又，前述熱板亦可不只藉輻射同時並藉對流對前述被 加熱基板施加熱’ 亦可施加輕射熱等等（輻射熱和對 流熱）。此時，可藉前述減熱部減低由前述周圍施加至該被 加熱基板之輻射熱量即對流熱量，以抑制由於前述接觸傳 熱而產生之從該熱板對該被加熱基板施加熱量造成之該被 加熱基板溫度上升。 依本發明第2態樣，可提供如第1態樣之加熱裝置，其 中鈿述基板支持銷係固定於前述熱板，且在該被加熱基板 加熱之期間用以保持該被加熱基板與該熱板有間隔的近接 銷。 依本發明第3態樣，可提供如第丨態樣之加熱裝置，其 中前述基板支持銷係配置成可沿形成在前述熱板之貫通孔 上下移動，且在該被加熱基板加熱之期間用以抬起並保持 該被加熱基板與該熱板有間隔的升高銷。 依本發明第4態樣，可提供如第1至3態樣中任一態樣之 加熱裝置，其中前述減熱部係由與前述熱板不同之另一構 件形成的減熱構件，且至少利用前述熱板與前述減熱構件 之接觸面的接觸電阻來減低前述輻射熱量。 依本發明第5態樣，可提供如第4態樣之加熱裝置，其 中前述減熱部係由配置在前述基板支持銷周圍之多數前述 減熱構件所構成者。 依本發明第6態樣，可提供如第4態樣之加熱裝置，其 中則述減熱構件具有由多數構件積層之積層構造，且利用 各層間之接觸面之接觸電阻來減低前述輻射熱量。 依本發明第7態樣，可提供如第4態樣之加熱裝置，其 中刚述減熱構件配置於前述熱板上，使前述被加熱基板與 幻述減熱構件之間的間隔尺寸較前述被加熱基板與前述熱 200423203 板之間之前述間隔尺寸還大。 依本發明第8態樣，可提供如第1至3態樣中任一態樣之 加熱裝置，其中前述減熱部係形成在前述基板支持銷之周 圍的凹部，且藉由形成前述凹部，使前述被加熱基板與前 述凹部之内底表面之間的間隔尺寸較前述被加熱基板與前 述熱板之間之前述間隔尺寸還大，藉此來減低前述輻射熱 量0 依本發明第9態樣，可提供如第8態樣之加熱裝置，其 中前述凹部於前述内底表面具有朝前述基板支持銷中心之 1〇 深度梯度。 依本發明第10態樣，可提供如第1態樣之加熱裝置，其 中前述減熱部，沿前述熱板之表面，具有其中心配置成與 前述基板支持銷之中心大致一致之大略圓形或大略多角形 的外周端部。 15 依本發明第11態樣，可提供如第3態樣之加熱裝置，其 中月ό述貝通孔’其孔徑在前述熱板之上面附近較在前述熱 板之内部擴大。 依本發明第12態樣’可提供如第3態樣之加熱裝置，其 中前述升高銷之周圍具有遮蔽板，該遮蔽板係配置成可遮 20擋從前述貫通孔朝前述被加熱基板產生之上升氣流者。 依本發明第13態樣，可提供如第1至3態樣中任一態樣 之加熱裴置，其中前述加熱裝置係用以加熱前述被加熱基 板，使供給到前述被加熱基板之表面的膜原料溶液乾燥， 俾於前述表面形成薄膜的薄膜形成用加熱裝置。 10 依本發明第1態樣，當由熱板藉施加輻射熱來加熱被加 熱基板（以下簡稱為基板）時，因為是使用用以保持（支 持）該基板與該熱板有預定間隔的基板支持銷，所以—般 認為前述基板與前述基板支持銷之接觸傳熱會在前述接觸 部施加較其他部分更多熱量，而阻礙前述基板之岣勻加 熱，但是，該熱板之前述基板支持銷的周圍設有減熱部2 減低來自具有前述減熱部之部分的輻射熱量，以抑制前述 接觸傳熱產生之額外熱量造成該基板溫度上升，藉此3事 先防止前述均勻加熱的阻礙。因此，可均勻地加熱前述基 板，防範由於未均勻加熱將導致的問題於未然。例如，若 欲利用加熱之乾燥處理於前述基板上形成均一膜厚之薄: 時，可達成前述薄膜膜厚之高精度均一。 、 依本發明第2態樣，特別若是大型液晶面板用基板，則 於該基板之薄膜形成區域，前述基板支持鎖必須係由近接 鎖來支持前述基板，此可確實防止前述近接銷之支持部分 對基板的影響。又，這種前述近接銷，在前述加熱處理時， 也由於其支持前述基板之時間較長，藉與前述基板之接觸 傳遞之熱量亦較大，所以可使本態樣之效果更上一層。 依本發明第3態樣’為進行這種前述基板之自動化處 里义/頁係用Μ使前述基板升降，呈可搬送狀態的升高銷， 不過前述基板支持鎖係前述升高鎖時，依然可確實獲得前 述第1態樣之效果。 依本毛明帛4態樣，纟於前述減熱料&與前述軌板不 同之另-構件形成的減熱構件，即獨立之減熱構件，所以 200423203 可利用=述熱板與前述減熱構件之接觸面的接觸電阻，來 減低從前述熱板傳遞到前述減熱構件的熱量，最終，可減 低從前述減熱構件輻射到前述基板的熱量。更進一步，若 使用導熱率較前述熱板小之材料形成前述減熱構件，可更 5 減低前述轄射熱量。 依本發明第5態樣’由於前述減熱部係由配置在前述基 板支持銷周圍之多數前述減熱構件所構成者，所以可獲得 前述各態樣之效果的同時，可利用其配置位置和個別構件 之幻开^狀，還有配置密度和多種構件混合配置等的技 10巧，輕易地將前述輻射熱量作多樣性調整。 依本發明第6態樣，由於將前述減熱構件形成多層構 造’所以亦可獲得積極活用前述接觸電阻之減熱效果，以 及積層多種構件等而可輕易地調整前述減熱量。 依本發明第7態樣，調整前述基板與前述減熱構件之間 15隔尺寸，可獲得與兩者間距離成正比之減熱效果，使減熱 量調整报容易。 、依本發明第8祕，並;f；限於由構件構成的情形，當前 述減熱是形成在前述基板支持銷之周圍的凹部時，亦係 y利用基板與前述凹部之内底表面之距離產生的輻射熱減 20 v效果，達成前述輻射熱減低帶來的前述基板溫度分布均 一化。 依本發明第9態樣，由於前述凹部之内底表面設有朝前 述基板支持銷中心之深度梯度，所以可微妙地調整與前述 基板支持鎖之接觸傳熱產生之熱量施加量對應的輕射熱 12 200423203 量，使得從前述凹部之内底表面朝相對之前述基板輕射之 熱量亦是在靠近前述基板支持銷處小，隨著愈遠離前述基 板支持銷而逐漸變大。 依本發明第10態樣，由於前述減熱部具有以前述基板 5 支持銷中心為其中心之大略圓形或大略多角形的外周端 部，所以可對應於以前述基板支持銷為中心之前述傳熱施 加熱量的擴展，形成前述減熱部之減熱區域。 依本發明第11態樣，雖然會產生從前述升高銷升降之 前述貫通孔内部朝前述基板冒出之高溫上升氣流，且該上 10升氣流與前述基板接觸，使前述基板之溫度分布局部混 亂，但疋由於前述貫通孔在前述熱板之上面附近擴大，所 以可讓月ίι述上升氣流在擴散狀態下冒出。因此，可降低該 上升氣流對前述基板溫度分布的影響，形成更均一之溫度 分布。 15 依本發明第12態樣，前述貫通孔内設有遮蔽板，所以 亦可使前述上升氣流擴散或遮擋前述上升氣流，有助於前 述基板溫度分布之均一化。 依本發明第13態樣，由於前述加熱裝置係用以加熱前 述被加熱基板，使供給到前述被加熱基板之表面的膜原料 2〇溶液乾燥，俾於前述表面形成薄膜的薄膜形成用加熱裝 置，所以可實現該加熱處理時之溫度分布均一化，最終， 可幵成具有已均-化之膜厚分布的前述薄膜。此外，還可 、<不太被重視之乾燥不均（熱像·· image)， 而可形成高精度的薄膜。 13 200423203 圖式簡單說明 本發明之前述與其他目的及特徵，從以下配合附加圖 式之較佳實施形態相關敘述說明，便可更清楚明瞭。這些 圖式係： 5 第1圖係顯示本發明實施形態之一之加熱裝置構造的 模式立體圖。 第2圖係前述加熱裝置的部分模式截面圖，其顯示於近 接銷周圍配置著其上面是與熱板上面大致同高度位置之溫 度調節構件的狀態。 10 第3圖係前述加熱裝置的部分模式截面圖，其顯示於近 接銷周圍配置著其上面位於較熱板上面還上方之高度位置 之溫度調節構件的狀態。 第4圖係前述加熱裝置的部分模式截面圖，其顯示於近 接銷周圍配置著其上面位於較熱板上面還下方之高度位置 15 之溫度調節構件的狀態。 第5圖係前述加熱裝置的部分模式截面圖，其顯示於近 接銷周圍配置凹部的狀態。 第6圖係第2圖之溫度調節構件的模式平面圖。 第7圖係第6圖之溫度調節構件之形狀變形例，其顯示 20 具有鋸齒之多角形狀者。 第8圖係第6圖之溫度調節構件之形狀變形例，其顯示 具有正八角形狀者。 第9圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數之部分圓環構件構成者。 14 200423203 第10圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數圓形構件構成者。 第11圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數微細粒子構件構成者。 5 第12圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數線狀構件構成者。 第13圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數線狀構件配置成放射狀而構成者。200423203 (1) Description of the invention: [Technical field to which the invention belongs] Field of the invention The present invention relates to a heating device for heating a heated substrate held by a substrate support pin represented by a proximity pin or a raised pin as 5, particularly the heating system. The present invention relates to a thin film heating device for forming a thin film when a polyimide printing device for a liquid crystal alignment film is used in combination, such as to dry a film material solution supplied onto the substrate to be heated by coating or printing. [Previous] 10 Background of the Invention Conventionally, such a heating device has various structures, for example, there is a heating device 501 having a structure shown in FIG. 27. As shown in FIG. 27, the heating device 501 includes: a hot plate 502, which is used to heat the heated substrate 51; and a raised pin 505, which is arranged so as to pass through each of the hot plates 502 formed. The holes 15 506 move up and down, and support the heated substrate 510 to lift them respectively; and the proximity pin 511 is fixed to the hot plate 502 and is used to separately hold the heated substrate while the heated substrate 510 is being heated. 510 is a predetermined distance from the hot plate 502. When the heated substrate 510 processed in the previous step is carried into the heating device 501 through a conveying device (not shown), the heating device 501 of this structure borrows the raising pins 505 (as shown in FIG. The broken line indicates sadness) to hold the heated substrate 510, and to carry the heated substrate 51o, so that the raised pins 505 are lowered in the holding state and the proximity pins 511 are used to hold the heated substrate 510. Ground, the heating plate 502 is used to heat the substrate 5105 to be heated (the state shown by a solid line in FIG. 27). When the heating process is completed for a predetermined time, each raised pin 505 is raised along each through hole 506, and the heated substrate 510 is transferred from each proximity pin 511 to each raised pin 505, and then heated by the aforementioned conveying device The substrate 505 is carried out from the heating device 501 (see, for example, Japanese Patent Laid-Open Publication No. 2001-44117). When the heating device 501 having such a structure is used to dry a film material solution such as an alignment film ink or a resist film ink applied on the substrate 510 to be heated, the substrate supporting pins such as the rising pins 505 and the proximity pins 511 and the like Where the heated substrate 510 is in contact, a ring-shaped uneven drying occurs. Specifically, the heated substrate 510 in a state heated by the radiant heat imparted by the hot plate 502 will locally increase the temperature as it conducts heat with the contact between the raised pins 505 and the proximity pins 511. A substantially circular high-temperature portion is generated on the surface of the substrate 51, resulting in uneven temperature on the heated substrate 51. In addition, because the local temperature rise is caused by the south temperature rising air flow of each of the through holes 506 provided to allow each of the raising pins 505 to move up and down, a substantially circular high temperature portion is also generated on the surface of the substrate 510 to be heated. That is, the heating is usually performed in a state where the surface of the hot plate 502 and the bottom of the heated substrate 51 are held at a distance of about 0.1 to 5 mm. However, since there are through holes 506 which are used to move each raising pin 505 up and down, Therefore, the heated substrate 51 is placed at a very close distance from each of the through holes 506, and the airflow rising in a cylindrical shape directly reaches the bottom of the heated substrate 510, which causes a strong temperature unevenness on the heated substrate. When the liquid such as ink supplied to the heated substrate 51 is to be dried, if the temperature of the surface of the heated substrate 510 is not uniform at each point on the heated substrate 51, the liquid supplied will not be uniform. It will dry early, and will produce early drying part and late drying part. As a result, there is a difference in film thickness of the gj-shaped film formed after the early drying and the late drying portions'. It is presumed that this is because the liquid on the substrate 510 to be heated moves from the place where the drying is started to the place where it is late to drying, or vice versa. Therefore, in order to prevent uneven drying, the temperature of the surface of the substrate 510 to be heated must be kept constant during the drying process. To maintain the surface temperature of the heated substrate 510, one method is to install a sharp object formed of a plastic material with low thermal conductivity on the top of each of the raised pins 505 and the proximity pins 511, so that the raised pins 505, the proximity pins 511 and The heat of the heat transfer of the heated substrate 51 () is difficult to transfer to the heated substrate (see, for example, Japanese New Patent Publication Shikaihei 6_2677). SUMMARY OF THE INVENTION Summary of the Invention In recent years, such polyimide (film raw material solution) is printed by a polyimide printing device for a liquid crystal alignment film, and the polyimide is dried by a heating device using the aforementioned substrate support pin. A liquid crystal display device (a so-called liquid crystal panel) made of a heated substrate is gradually becoming larger. With the increase in the size of liquid crystal panels, it becomes more difficult to achieve a uniform distribution of the degree of heating when the large-sized substrate to be heated is dried. In fact, even a liquid crystal panel made of a substrate to be heated which is dried by using the aforementioned heating device, even when the panel is actually lit, it can be confirmed that there is a slight unevenness in drying. Also, although a plastic material with a small thermal conductivity is arranged at the front end of the raising pin 505 and the proximity pin 511, it has a certain degree of effect, but it can be confirmed that there is a vague drying unevenness, which cannot be said to be a complete countermeasure. In addition, even if the structure of such a heating device is used, the high-temperature rising air flow rising through the through-holes of the k-hot plate cannot be solved, and this will be an important factor for uneven drying. Therefore, the 'object of the present invention is to solve the foregoing problems, and a garment can be provided including a hot plate for heating a heated substrate by applying radiant heat' and 'provided on the hot plate and heated on the heated substrate. The substrate supporting pin for holding the heated substrate and the hot plate spaced therebetween is characterized in that the heated substrate held by the substrate supporting pin can be uniformly heated. To achieve the foregoing object, the present invention is structured as follows. According to the first aspect of this Maoming, a heating device may be provided, which includes a hot plate for heating a heated substrate by applying radiant heat; and is provided on the hot plate and is used for holding the heated substrate during heating The substrate supporting pin with a space between the heated substrate and the hot plate is characterized in that: the aforementioned substrate supporting pin of the hot plate is provided with a heat reducing section for reducing the heat from the aforementioned barrier to the heated substrate, In addition, by the aforementioned heat-reducing portion, the radiant heat applied from the surroundings to the plate to be added or subtracted (that is, the portion of the forehead plus secret plate relative to the surroundings) is generated due to the contact heat transfer of the substrate supporting pins. The temperature of the heated substrate is caused by the heat applied from the slave plate to the heated substrate. In addition, the aforementioned hot plate may apply heat to the heated substrate not only by radiation but also by convection, as well as light radiation heat (radiation heat and convection heat). At this time, the radiant heat applied to the heated substrate from the surroundings, i.e., convection heat, can be reduced by the aforementioned heat-reducing portion, so as to suppress the heat caused by the heat transfer from the hot plate to the heated substrate caused by the contact heat transfer. The temperature of the heated substrate rises. According to a second aspect of the present invention, a heating device as in the first aspect can be provided, wherein the substrate supporting pin is fixed to the aforementioned hot plate, and is used to hold the heated substrate and the heated substrate during the heating of the heated substrate. The hot plate has spaced proximity pins. According to a third aspect of the present invention, there can be provided the heating device according to the third aspect, wherein the substrate supporting pin is configured to be movable up and down along a through hole formed in the hot plate, and is used during the heating of the heated substrate. To raise and hold the raised pin with a space between the heated substrate and the hot plate. According to a fourth aspect of the present invention, there may be provided a heating device as in any one of the first to third aspects, wherein the heat-reducing portion is a heat-reducing member formed by another member different from the heat plate, and at least The contact resistance of the contact surface between the hot plate and the heat reducing member is used to reduce the radiant heat. According to a fifth aspect of the present invention, there can be provided the heating device according to the fourth aspect, wherein the heat-reducing portion is composed of a plurality of the heat-reducing members arranged around the substrate support pin. According to the sixth aspect of the present invention, there can be provided the heating device as the fourth aspect, wherein the heat-reducing member has a laminated structure in which a plurality of members are laminated, and the contact resistance between the contact surfaces between the layers is used to reduce the aforementioned radiant heat. According to the seventh aspect of the present invention, a heating device as in the fourth aspect can be provided, in which the heat-reducing member is just arranged on the hot plate, so that the space between the heated substrate and the magical heat-reducing member is larger than that described above. The aforementioned space size between the heated substrate and the aforementioned thermal 200423203 plate is still large. According to an eighth aspect of the present invention, there can be provided the heating device as in any one of the first to third aspects, wherein the heat-reducing portion is a recessed portion formed around the substrate support pin, and by forming the recessed portion, The space between the heated substrate and the inner bottom surface of the recess is larger than the space between the heated substrate and the hot plate, thereby reducing the radiant heat. 0 According to the ninth aspect of the present invention, The heating device according to the eighth aspect can be provided, wherein the recess has a depth gradient of 10 on the inner bottom surface toward the center of the substrate support pin. According to the tenth aspect of the present invention, the heating device as the first aspect can be provided, wherein the heat-reducing portion has a substantially circular shape whose center is arranged to be substantially consistent with the center of the substrate support pin along the surface of the hot plate. Or roughly polygonal peripheral ends. 15 According to the eleventh aspect of the present invention, a heating device according to the third aspect can be provided, in which the through hole ′ is larger near the upper surface of the hot plate than inside the hot plate. According to the twelfth aspect of the present invention, a heating device as in the third aspect can be provided, wherein the raising pin is provided with a shielding plate around the shielding pin, and the shielding plate is configured to cover 20 stops from the through hole toward the heated substrate. Of the updraft. According to a thirteenth aspect of the present invention, a heating device according to any one of the first to third aspects can be provided, wherein the heating device is used to heat the heated substrate, so that the heat is supplied to the surface of the heated substrate. The film raw material solution is dried, and the film forming heating device is formed on the surface to form a thin film. 10 According to the first aspect of the present invention, when a heated substrate is heated by applying radiant heat to a heated substrate (hereinafter referred to simply as a substrate), it is used to hold (support) the substrate with a predetermined distance between the substrate and the hot plate. Therefore, it is generally considered that the contact heat transfer between the substrate and the substrate support pin will apply more heat to the contact portion than other parts, and prevent uniform heating of the substrate. However, the substrate support pin of the hot plate A heat-reducing portion 2 is provided in the periphery to reduce the radiant heat from the portion having the heat-reducing portion, so as to suppress the increase in the temperature of the substrate caused by the additional heat generated by the contact heat transfer, thereby preventing the obstacle of the uniform heating in advance. Therefore, the aforementioned substrate can be uniformly heated to prevent problems caused by uneven heating. For example, if it is desired to form a uniform thin film thickness on the substrate by using a heating and drying process, the high-precision uniformity of the thin film thickness can be achieved. According to the second aspect of the present invention, especially if it is a substrate for a large-scale liquid crystal panel, in the film formation area of the substrate, the substrate support lock must be supported by a proximity lock to prevent the support portion of the proximity pin. Impact on the substrate. In addition, during the heat treatment, the proximity pin also supports the substrate for a long time, and the heat transferred through the contact with the substrate is also large, so the effect of this aspect can be further enhanced. According to the third aspect of the present invention, in order to perform the automatic processing of the substrate, the substrate is lifted and lowered by M to be a lift pin that can be transported. However, when the substrate supports the lock as the lift lock, The effect of the first aspect can be surely obtained. According to this 4th aspect of Maoming, the heat-reducing material that is different from the aforementioned heat-reducing material & the rail plate is a heat-reducing component formed by the component, that is, an independent heat-reducing component, so 200423203 can be used = The contact resistance of the contact surface of the thermal member reduces the heat transferred from the hot plate to the heat-reducing member, and finally reduces the heat radiated from the heat-reducing member to the substrate. Furthermore, if the heat-reducing member is formed by using a material having a lower thermal conductivity than the hot-plate, the radiation heat can be further reduced. According to the fifth aspect of the present invention, since the heat-reducing portion is composed of a plurality of the heat-reducing members arranged around the substrate support pin, the effects of the various aspects can be obtained, and the position and The magical shape of individual components, as well as techniques such as configuration density and mixed configuration of various components, can easily adjust the aforementioned radiant heat in a variety of ways. According to the sixth aspect of the present invention, since the heat-reducing member is formed into a multi-layered structure, the heat-reducing effect of the contact resistance can be actively used, and a variety of members can be laminated to easily adjust the heat-reducing amount. According to the seventh aspect of the present invention, by adjusting the size of the 15 interval between the substrate and the heat-reducing member, a heat-reducing effect proportional to the distance between the two can be obtained, making it easy to adjust the heat-reduction amount. According to the eighth secret of the present invention, and; f; limited to the case of a component, when the aforementioned heat reduction is formed in the recessed portion around the substrate support pin, it also uses the distance between the substrate and the inner bottom surface of the recessed portion. The generated radiant heat is reduced by 20 v, thereby achieving uniformity of the substrate temperature distribution caused by the radiant heat reduction. According to the ninth aspect of the present invention, since the inner bottom surface of the recessed portion is provided with a depth gradient toward the center of the substrate support pin, the light shot corresponding to the heat application amount generated by the contact heat transfer of the substrate support lock can be finely adjusted. The amount of heat 12 200423203 makes the light emitted from the inner bottom surface of the recess toward the substrate opposite to the substrate smaller, and gradually becomes larger as it moves away from the substrate supporting pin. According to the tenth aspect of the present invention, since the heat-reducing portion has a substantially circular or substantially polygonal outer peripheral end with the center of the support pin of the substrate 5 as the center, it can correspond to the foregoing center of the support pin of the substrate. The expansion of the applied heat by heat transfer forms the heat reduction area of the aforementioned heat reduction portion. According to the eleventh aspect of the present invention, although a high-temperature updraft emerging from the inside of the through hole raised and lowered by the raised pin toward the substrate is generated, and the upper 10 liters of air is in contact with the substrate, the temperature distribution of the substrate is locally It is confusing, but since the through-holes are enlarged near the upper surface of the hot plate, it is possible to let the ascending gas flow out in a diffused state. Therefore, it is possible to reduce the influence of the rising air flow on the temperature distribution of the substrate and to form a more uniform temperature distribution. 15 According to the twelfth aspect of the present invention, a shielding plate is provided in the through hole, so that the updraft can be diffused or blocked, which contributes to the uniformity of the substrate temperature distribution. According to a thirteenth aspect of the present invention, the heating device is a heating device for forming a thin film, which heats the substrate to be heated, dries a solution of the film material 20 supplied to the surface of the substrate to be heated, and forms a thin film on the surface. Therefore, the temperature distribution during the heat treatment can be uniformized, and finally, the aforementioned thin film having a uniform-thinned film thickness distribution can be formed. In addition, < Uneven drying (heat image ...), which is less valued, can form a high-precision film. 13 200423203 Brief description of the drawings The foregoing and other objects and features of the present invention can be made clearer from the following description of the preferred embodiments with additional drawings. These drawings are: 5 Fig. 1 is a schematic perspective view showing the structure of a heating device according to an embodiment of the present invention. Fig. 2 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature adjustment member having an upper surface thereof positioned at approximately the same height as the upper surface of the hot plate is arranged around the proximity pin. 10 FIG. 3 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature regulating member having an upper surface thereof positioned at a height higher than the upper surface of the hot plate is arranged around the proximity pin. Fig. 4 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature regulating member having an upper surface positioned at a height position 15 above and below the hot plate is arranged around the proximity pin. Fig. 5 is a partial schematic cross-sectional view of the heating device, and shows a state in which a recessed portion is arranged around the proximity pin. FIG. 6 is a schematic plan view of the temperature adjustment member of FIG. 2. Fig. 7 is a modification example of the shape of the temperature-adjusting member of Fig. 6, which shows a polygonal shape having a sawtooth shape. Fig. 8 is a modification example of the shape of the temperature adjustment member of Fig. 6 and shows a shape having a regular octagonal shape. Fig. 9 is a modification example of the shape of the temperature adjusting member shown in Fig. 6, which shows a plurality of partial ring members. 14 200423203 Fig. 10 is a modification example of the shape of the temperature adjustment member in Fig. 6 and shows a structure composed of a plurality of circular members. Fig. 11 is a modification example of the shape of the temperature adjusting member in Fig. 6 and shows a structure composed of a plurality of fine particle members. 5 Fig. 12 is a modification example of the shape of the temperature adjusting member shown in Fig. 6 and shows a structure composed of a plurality of linear members. Fig. 13 is a modification example of the shape of the temperature adjusting member in Fig. 6 and shows a configuration in which a plurality of linear members are arranged radially.

第14圖係第6圖之溫度調節構件之形狀變形例，其顯示 10 由多數任意形狀構件構成者。 第15圖係前述加熱裝置的部分模式截面圖，其顯示於 升高銷之貫通孔周圍配置著其上面是與熱板上面大致同高 度位置之溫度調節構件的狀態。Fig. 14 is a modification example of the shape of the temperature adjustment member shown in Fig. 6, and it shows that 10 is composed of a plurality of arbitrary shape members. Fig. 15 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature adjustment member having an upper surface thereof positioned at approximately the same height as the upper surface of the hot plate is arranged around the through hole of the raising pin.

第16圖係前述加熱裝置的部分模式截面圖，其顯示於 15 升高銷之貫通孔周圍配置著其上面位於較熱板上面還上方 之南度位置之溫度調卽構件的狀態。 第17圖係前述加熱裝置的部分模式截面圖，其顯示於 升高銷之貫通孔周圍配置著其上面位於較熱板上面還下方 之高度位置之溫度調節構件的狀態。 20 第18圖係前述加熱裝置的部分模式截面圖，其顯示於 升高銷之貫通孔周圍形成凹部的狀態。 第19圖係前述加熱裝置的部分模式截面圖，其顯示升 高銷之貫通孔之開口部擴大的狀態。 第20圖係前述加熱裝置的部分模式截面圖，其顯示於 15 200423203 升高銷周圍設有遮蔽板的狀態。 第21圖係第15圖之溫度調節構件的模式平面圖。 第22圖係顯示本發明實施例2之加熱裝置之升高銷周 圍構造的模式截面圖。 5 第23A圖及第23B圖係顯示實施例1使用近接銷時之基 板溫度分布的圖，第23B圖係離近接銷中心之距離與基板表 面溫度之間關係的圖表，第23A圖係顯示依據第23B圖表畫 出之基板表面2維溫度變化的等溫線分布圖。 第24A圖及第24B圖係顯示比較例1使用近接銷時之基 1〇 板溫度分布的圖，第24B圖係離近接銷中心之距離與基板表 面溫度之間關係的圖表，第24A圖係顯示依據第24B圖表畫 出之基板表面2維溫度變化的等溫線分布圖。 第25A圖及第25B圖係顯不貫施例2使用升南銷時之基 板溫度分布的圖，第25Β圖係離升高銷中心之距離與基板表 15 面溫度之間關係的圖表，第25Α圖係顯示依據第25Β圖表畫 出之基板表面2維溫度變化的等溫線分布圖。 第2 6 Α圖及第2 6 Β圖係顯示比較例2使用升高銷時之基 板溫度分布的圖，第26B圖係離升高銷中心之距離與基板表 面溫度之間關係的圖表，第26A圖係顯示依據第26B圖表畫 20 出之基板表面2維溫度變化的等溫線分布圖。 第27圖係顯示習知加熱裝置構造的模式戴面圖。 I：實施方式3 較佳實施例之詳細說明 在繼續本發明說明之前，對於附加圖式中之相同構件 16 200423203 賦與相同參照標號。 首先，先解釋本發明所用之用語的定義。 所謂用語「近接銷（proximity-pin)」，係在被加熱基板 之加熱處理時，不使該被加熱基板吸附於熱板，而是用以 5保持該被加熱基板與該熱板之間有間隔的間隔保持銷。 又’在如此以近接銷保持著前述預定間隔的狀態下，藉來 自前述熱板之輻射熱進行之該被加熱基板的加熱處理稱為 近接乾燥（proximity bake )。 所谓用語「熱像（Thermal Image )」，係指在塗布或印 10刷後之暫時乾燥階段，因被加熱基板之溫度不均而產生的 膜厚不均。這種溫度不均係由於升高銷、近接銷、或機器 臂等與前述被加熱基板接觸者之導熱及於貫通孔產生之上 升氣流所導致的。 以下，配合參照圖式，詳細地說明本發明之實施形態。 15 第1圖顯示本發明一實施形態之加熱裝置構造之例之 薄膜形成用加熱裝置101主要構造的模式。 如第1圖所示，加熱裝置101包含有··熱板2,以該圖示 上面側為加熱表面，來對配置在其上方之作為被加熱基板 一例之基板10施加輻射熱者；及多數基板支持銷5、u，設 2〇於該熱板2上面，且在進行對基板1〇之前述加熱日寺，用以保 持基板10與熱板2有間隔者。 此種加熱裝置101，係在藉各基板支持銷5、u支持其 上面已供、、’σ有膜原料浴液之狀態之基板1 〇與熱板2之前述 加熱表面有預定間隔的狀態下，由熱板2之前述加熱表面對 17 5 俾一邊大致均勻地加熱基板1〇整 較前膜原料溶液乾燥，藉此來完成在基板1〇上形 成磚螟的膜形成處理。 叉，加熱裝置101所設置之各基板支持銷5、u，依其 使用目μ 加埶的及功能，可分為2類。1種係近接銷11，係用以在 定^處理之際支持基板10，使基板10可位於熱板2上方之預 在其度位置者，而另1種係升高銷5，係可一邊支持著配置 上方之基板10一邊下降，以由近接銷11來支持基板 10 ίο將教且可上升從基板10下方抬起由近接銷11支持之基板 字之搬出者。以下，詳細地說明此加熱裝置ι〇ι之構造， 特另丨j I^ 15 刀別以升咼銷5及近接銷11相關構造為中心來說明。 接金>在此，第2圖係顯示在加熱裝置101之熱板2上方，由近 、、肖11支持著上面已塗布有膜原料溶液8之基板1〇之狀態 的模式截面圖。如第2圖所示，熱板2係用以加熱基板1〇者， 例如’可使用以電力等產生熱之發熱部*及用以對基板輕 射放出由該發熱部4施加之熱的頂板部3組合而構成者等 20 基板1〇進行輻射加熱，俾一 ΜΆ 等。另，熱板2並不僅限於如此組合而構成者，例如，由前 述發熱部單體構成者亦可。又，這種發熱部4可使用護套加 熱器等，而頂板部3可使用傳熱性良好金屬之例如鋁來形 成。又，基板10可使用已塗布配向膜墨水或抗蝕膜墨水等 膜原料溶液8之玻璃板等。 又，如第2圖所示，熱板2上面，即頂板部3上面，配置 固定有近接銷11，用以在基板10加熱期間保持基板1〇與熱 板2有一定間隔。 18 200423203 近接銷11可以其上方側前端部來支持基板10，此外， 該前端部形成尖端部，俾以小支持面積來支持基板1〇，使 違支持對基板10的影響降低。又，近接銷Η可使用由導熱 率小之聚醚醯亞胺樹脂、全氟烷氧基樹脂、聚碳酸酯樹脂 5等塑膠材料形成者。又，亦可不如此地整體以塑膠材料形 成，而是以剛性高之金屬材料（例如，不銹鋼材料）形成 近接銷11本體部，且僅其前端部以塑膠材料形成。又，近 接銷11 ’例如其直控形成在約〇 1mm〜5mm之範圍内。另， 近接銷11可由單線材形成，或者亦可由多數細線材之集合 體形成。 又如第2圖所示，熱板2之圖示上面之近接銷I〗周圍， 15 20 配置由與熱板2不同之另-構件形成（即，由獨立之構件形 成）的減熱部及減熱構件之一例的溫度調節構件13。如後 將述’該溫度調節構件13具有的功能係可在設有溫度調節 構件13之部分減低由頂板部3對基板職加的輕射熱量。 又’可配置溫度調節構件13之處是在熱板2之上面附近， 即，：在頂板部3之上面附近，亦可在頂板部3之裡面附近。 淮且配置成使溫度調節構件π與發熱部4不直接接觸。 〜這種溫度調節構件13，如第6圖之溫度調節構件13的模 式平面圖所不，例如，可使用其外周端部具有大略圓形， 〜2Gmm，厚度咖_上之環狀者。此時， 則述環狀之崎可形成與近接⑧直徑大致相同尺寸，以 Ϊ = Π之周面相接，或者，亦可形成有間隙，使溫度 °即與近接銷11之周面不相接，將前述_作為用 19 200423203 以減低從溫度言周節構件13朝近接_之傳熱量的減熱帶使 用。又，溫度調節構件13之材料，宜使用導熱率較鋁等金 屬材料形成之熱板2表面素材逛低的材料，例如，聚酿亞胺 系樹脂、全氟烷氧基系樹脂等合成樹脂，陶瓷材料等導熱 5率低的材料。另，亦可使用與熱板2表面素材同一材料或者； 導熱率與該表面素材相近的材料。其他，亦可使用含有人 金材料等之金屬材料、自然石材等。但是，必須是對熱板 1 之加熱溫度具有耐熱性者，例如，宜具有約2〇〇它以上之耐 熱溫度。 1〇 又，如第2圖所示，可於熱板2之頂板部3之上面，將溫 度調節構件I3欲入近接銷關圍之形成與該溫度調節構件 13形狀一致之孔部以配置溫度調節構件13。又，這樣之配 置，可使用耐熱性接著材料之接著固定裝置或螺固之固定 裝置等來保持。另，雖未圖示，不過亦可使用耐熱性接著 15劑直接接著溫度調節構件13將之固定在頂板部3之上面。 如此地將溫度調節構件13配置在熱板2之近接銷u周 圍，可調節輻射到由近接銷U所保持之基板1〇的熱量。具 體而言，藉著選擇導熱率較熱板2表面素材低之材料作為溫 度調節構件13之材料，可將從熱板2隔著溫度調節構件槐 2〇射到基板10之熱量，減得遠比溫度調節構件13周圍之從熱 板2表面直接輻射到基板10之熱量還少。又，可選擇導熱率 與熱板2表面素材相近的材料作為溫度調節構件η之材 料，將輻射到基板10之熱量減少些許。另，即使是使用與 熱板2表面素材同-材料時，由於可藉溫度調節構件13與熱 20 板2之接觸面的接觸電阻來猶微減低從熱板2傳到溫度調節 構件^之傳熱量，因此可稍微減低前述輻射熱量，並微妙 地η周即基板1G之溫度。舉例而言，若熱板2之表面溫度約為 b〇°c ,則藉這種接觸電阻可降低約2〜3。(：的溫度。 5 又，當將溫度調節構件13配置在熱板2之上面附近時， 如弟3圖之模式說明圖所示，亦可配置成使溫度調節構件^ 之上面位於較熱板2之上面還高的位置，即配置成使基板1〇 與溫度調節構件13之間之間隔尺寸較基板1()與熱板2之間 之間隔尺寸還小。如此一來，例如即使由溫度調節構件Η 10朝基板10輕射之輻射熱量之減熱量過大時，還是可調節縮 小該溫度㈣構件13與基板1G之間之_尺寸，以將前述 減熱量調整成適當之量。又，反之，如第4圖之模式截面圖 所示，亦可配置成使溫度調節構件13之上面位於較熱板2之 上面還低的位置，即配置成使基板10與溫度調節構件13之 5間之間隔尺寸較基板10與熱板2之間之間隔尺寸還大。如此 —來，可將由溫度調節構件13輻射到基板1〇之熱量，減得 較由其周圍之熱板2直接輻射到基板1〇之熱量更少，結果可 凋節溫度，將基板10相對於溫度調節構件13之部分之溫度 降得較其周圍低。另，宜將溫度調節構件13之上面之高度 2〇位置相對熱板2之上面之高度位置的差調整在在例如一（頂 板部3之厚度尺寸）+5mm左右之範圍内。惟，考慮到以溫 度調節構件13與近接銷11之接觸位置為中心，直徑15mm& 右之範圍是可受到由於傳熱而產生之溫度變化之影響的區 域，則一旦當差大於一20mm，就無法期待會有更好的效果。 21 200423203 再者，溫度調節構件13之形狀並不限於其周圍形狀形 成大略圓形之環狀者。例如，溫度調節構件13之外周端部 形狀亦可為多角形，而非前述大略圓形之環狀。具體而言， 可使用如第7圖所示，周圍形狀形成如鋸齒狀之多角形的溫 5度調#構件13A，以及如第8圖所示，形成正人角形之溫度 調節構件13B。如溫度調節構件13B，將周圍形狀形成正多 角升乂可幵々成近似大略圓形之形狀，又，如溫度調節構件 UA將周圍形狀形成鋸齒形狀，可使熱板2與溫度調節構 件13之間之邊界線模糊化，讓相對之基板之溫度調節更 10 平穩。 此外，如第9圖和第1〇圖所示，亦可於近接銷丨丨之周圍 配置多數構件，以構成溫度調節構件13C、13D。例如，第 9圖之溫度調節構件况制個之部分圓環構件⑽近接銷 11中、位置為其中心H成環狀，來構成大略環狀形狀。 I5又第10圖之溫度調節構件13〇係8個圓形構件大致均 等地配置於近接銷11周圍來構成者。如此地使用多數構件 構成溫度調節構件況、郎這些情形，亦可藉著調整各構 件之形狀和間隔來賦與作為溫度調節構件之功能。另，這 種構件除前述部分圓環構件14C和圓形構件14D以外，亦^ 2〇使用三角形構件和方形構件等等各種形狀的構件。當然， 亦可混合配置多種形狀之構件。 又，如第11圖所示，亦可於近接銷此周圍配置多數 微細粒子構件14E，以構成溫度調節構件13E。另，如第12 圖所示，亦可將多數線狀構件14F配置成大致平行以構成 22 200423203 溫度調節構件13F。當然，這種線狀構件14F之配列可採取 各式各樣圖案，例如配列成袼子狀、配列成不規則等等。 這類溫度調節構件13e、13F具有的優點，係可調整粒子構 件14E和線狀構件14F之配置密度和材質等，以稍微調整溫 5度調節構件13E、13F之減熱能力。 又，如第13圖所示，亦可將多數線狀構件14〇}大略放射 狀地配置於近接銷11之周圍，以構成溫度調節構件13(3。 另，如第14圖所示，亦可配置多數任意形狀構件14H，以構 成溫度調節構件13H。 10 此外，由於當將溫度調節構件13之形狀形成多角形等 複雜形狀時，熱板2及溫度調節構件13之加工就變得複雜， 所以是否要將溫度調節構件13之形狀形成多角形等，係依 所要求之膜厚平滑性及所允許之加熱裝置1〇1之製造原價 來選擇的。 15 又，除前述運用溫度調節構件13之各種形狀和配置等 以外，亦可於熱板2之近接銷π之周圍設置冷卻裝置。設置 冷卻裝置，可部分地降低前述周圍之溫度，且因此亦可減 低所輻射之熱量。另，這種冷卻裝置，可使用例如空氣冷 卻管和水冷管等流體冷卻裝置，或冷卻葉片等。又，使用 20前述流體冷卻裝置時，例如，若是空氣宜在 60cc/min〜600cc/min之流量範圍，若是水則宜在 6cc/min〜60cc/min之流量範圍。另，使用冷卻葉片時，例如， 葉片表面積（傳熱面積）宜在相對於冷卻葉片設置區域之 面積約為1.1〜10倍之間。 23 200423203 另外，亦可不以另一構件形成溫度調節構件13，改而 於熱板2表面之近接銷11周圍設置以近接銷u中心為其中 心之大略同心圓狀或同心多角形的縫隙。形成這種縫隙， 可於該縫隙部分減少接觸傳熱產生之傳熱量，結果可將該 5部分溫度降得較其他部分低，有助於減少輻射熱量。另， 這種縫隙宜形成在1處〜20處左右之範圍内。 如此地在熱板2之近接銷11周圍配置溫度調節構件 13，可將從熱板2隔著溫度調節構件13輻射到基板1〇之熱 量，減得比從熱板2直接輻射到基板10之熱量還少。藉此， 10可減少前述輻射熱量來抵銷藉近接銷11與基板1〇之接觸而 傳遞之熱量，換言之，對應前述接觸傳熱熱量來減少前述 輻射熱量，可使前述接觸傳熱形同並未產生過。因此，可 防止由於近接銷11與基板10之接觸而產生之傳熱在基板1〇 造成以近接銷11所在位置為中心的圓形高溫部分，達成基 15板10溫度分布均一化。另，可考慮欲乾燥之基板10之厚度、 欲塗布材料之揮發溫度、塗布量等來選擇溫度調節構件 之配置、形狀、形成材料，以調節前述輻射熱量之減少量。 又，當溫度調節構件13是使用導熱率較熱板2低之材料 時，可降低近接銷11本身溫度，更具效果。 20 又，用以調節對基板10施加之輻射熱的減熱部，並不 限於如所述溫度調節構件13，以構件構成的情形。舉例而 cr亦了不以構件構成，而是如第5圖所示，於近接銷u周 圍之熱板2上面形成凹部23，令該凹部23發揮前述減熱部之 功能。如第5圖所示，凹部23於熱板2之近接銷丨丨周圍形成 24 200423203 環狀，其内底表面之高度位置形成較熱板2之上面低。將該 凹部23之外周直徑調節為約0·卜20mm，深度為〇 〇lmm以上 即可。 又，凹部23之形狀，不只環狀，可與前述溫度調節構 5 件13—樣地，形成多角形狀等各種形狀。尤其係於凹部23 之内底表面，朝近接銷11中心設有例如漸深入之深度梯 度，在調整輻射熱量上，亦為一有效方法。因為從凹部23 朝基板10施加之輻射熱量係與凹部23内底表面與基板1〇之 間距離成反比之故。另，設置這種傾斜時，可在1〇〜9〇度之 1〇 範圍内，選擇其傾斜角度。 接著’說明升高銷5之構造。首先，第15圖係顯示在加 熱裝置101之熱板2之上方，由升高銷5支持著上面已塗布有 膜原料溶液8之基板10之狀態的模式截面圖。 如第15圖所示，組合頂板部3與發熱部4而構成之熱板2 15形成有多數貫通孔6 (另，第15圖顯示其中i個貫通孔〜 且於貫通孔6配置有可沿該貫通孔6升降，且在基板ι〇加熱 之期間用以抬起並保持基板1 〇與熱板2有任意間隔的升高 銷5。 。 升高銷5，可使用於不錄鋼、電鍍鋼、銘、銅及前述者 之合金等之金屬製棒材前端配置著導熱率小之聚魏亞胺 樹脂、全氟燒氧基樹脂、聚碳酸賴樹脂等塑膠材料而構成 者。另，升高鎖5亦可不如此地由金屬材料及塑膠材料带 成，而是其整體都由前述塑膠材料形成。因為若可_ 剛性，就可縮小升高鎖5整體之導熱率。又，升高鎖^ 25 200423203Fig. 16 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature regulating member whose upper side is located southerly than the upper surface of the hot plate is arranged around the through hole of the 15-rise pin. Fig. 17 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature adjustment member having an upper surface thereof positioned at a higher position than the upper surface of the hot plate is disposed around the through hole of the raising pin. 20 FIG. 18 is a partial schematic cross-sectional view of the heating device, and shows a state where a recessed portion is formed around the through hole of the raising pin. Fig. 19 is a partial schematic cross-sectional view of the heating device, showing a state where the opening portion of the through hole of the raising pin is enlarged. Fig. 20 is a partial schematic cross-sectional view of the aforementioned heating device, which is shown in 15 200423203 with a shield plate around the raising pin. Fig. 21 is a schematic plan view of the temperature adjusting member of Fig. 15; Fig. 22 is a schematic cross-sectional view showing a surrounding structure of a raised pin of a heating device according to a second embodiment of the present invention. 5 Figures 23A and 23B are diagrams showing the temperature distribution of the substrate when the proximity pin is used in Example 1. Figure 23B is a graph showing the relationship between the distance from the center of the proximity pin and the surface temperature of the substrate. Figure 23A shows the basis The isotherm distribution diagram of the two-dimensional temperature change of the substrate surface drawn on the 23B chart. Figures 24A and 24B are graphs showing the temperature distribution of the base 10 plate when the proximity pin is used in Comparative Example 1. Figure 24B is a graph showing the relationship between the distance from the center of the proximity pin and the surface temperature of the substrate. Shows the isotherm distribution diagram of the two-dimensional temperature change of the substrate surface drawn according to the 24B chart. Figures 25A and 25B are diagrams showing the temperature distribution of the substrate in the case where the south pin is used in Example 2. Figure 25B is a graph showing the relationship between the distance from the center of the pin and the surface temperature of the substrate surface. The 25A diagram is an isotherm distribution diagram showing a two-dimensional temperature change of the substrate surface drawn according to the 25B diagram. Figures 26A and 26B are graphs showing the temperature distribution of the substrate when a rising pin is used in Comparative Example 2. Figure 26B is a graph showing the relationship between the distance from the center of the rising pin and the substrate surface temperature. Figure 26A is an isotherm distribution diagram showing the two-dimensional temperature change of the substrate surface drawn according to chart 26B. Fig. 27 is a schematic top view showing the structure of a conventional heating device. I: Detailed description of the preferred embodiment of Embodiment 3 Before continuing the description of the present invention, the same reference numerals are assigned to the same components in the additional drawings. First, the definitions of the terms used in the present invention are explained. The term "proximity-pin" is used to keep the heated substrate between the heated substrate and the hot plate during the heat treatment of the heated substrate. Interval interval retention pins. In addition, the heating treatment of the heated substrate by the radiant heat from the hot plate in a state where the predetermined interval is maintained by the proximity pin is called proximity bake. The term "Thermal Image" refers to the uneven film thickness caused by the uneven temperature of the substrate being heated during the temporary drying stage after coating or printing. This temperature unevenness is caused by the heat transfer of the contact of the raised pin, proximity pin, or robot arm with the substrate to be heated, and the upward air flow generated in the through hole. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 15 Fig. 1 shows a mode of a main structure of a heating device 101 for forming a thin film, which is an example of the structure of a heating device according to an embodiment of the present invention. As shown in FIG. 1, the heating device 101 includes a hot plate 2 that applies radiant heat to a substrate 10 as an example of a heated substrate disposed on the upper side of the figure as a heating surface; and most substrates Support pins 5 and u are provided on the hot plate 2 and the aforementioned heating of the substrate 10 is performed to keep the substrate 10 spaced from the hot plate 2. Such a heating device 101 is in a state in which the substrate 1 with a film of the raw material bath supplied thereon, and the substrate 1 with a film raw material bath on it are supported by the substrate supporting pins 5 and u with a predetermined distance from the heating surface of the hot plate 2. The substrate 10 is heated substantially uniformly by the aforementioned heating surface of the hot plate 2 to the side of 17 5 干燥 and dried over the front film raw material solution, thereby completing the film forming process for forming the brick 上 on the substrate 10. Each of the substrate supporting pins 5 and u provided in the fork and the heating device 101 can be classified into two types according to their use and functions. One type is the proximity pin 11, which is used to support the substrate 10 during the fixed process, so that the substrate 10 can be located above the hot plate 2 at a predetermined position, and the other type is the raised pin 5, which can be used on one side. While supporting the substrate 10 disposed above, it is lowered to support the substrate 10 by the proximity pin 11 and can be lifted from below the substrate 10 and lifted out of the substrate word supported by the proximity pin 11. In the following, the structure of this heating device is described in detail, and especially the structure of the lifting pin 5 and the proximity pin 11 will be described as the center. Gold Deposit> Here, FIG. 2 is a schematic cross-sectional view showing a state in which the substrate 10 on which the film raw material solution 8 has been applied is supported by the top, bottom, and bottom 11 above the hot plate 2 of the heating device 101. As shown in FIG. 2, the hot plate 2 is used to heat the substrate 10, for example, 'a heating portion that generates heat using electricity or the like can be used, and a top plate for lightly emitting the substrate to release the heat applied by the heating portion 4. The substrate 3 is composed of a combination of the parts 3, and the substrate 10 is subjected to radiant heating, such as 1 μm. In addition, the hot plate 2 is not limited to those composed in such a combination. For example, the heat plate 2 may be composed of the aforementioned heat generating unit alone. In addition, such a heat generating portion 4 can be formed by using a sheathed heater or the like, and the top plate portion 3 can be formed by using a metal having good heat conductivity such as aluminum. As the substrate 10, a glass plate or the like to which a film material solution 8 such as an alignment film ink or a resist film ink has been applied can be used. Further, as shown in FIG. 2, a proximity pin 11 is arranged and fixed on the upper surface of the hot plate 2, that is, the upper plate portion 3, so as to keep the substrate 10 and the hot plate 2 at a certain interval during the heating of the substrate 10. 18 200423203 The proximity pin 11 can support the substrate 10 at its upper front end portion. In addition, the front end portion forms a tip portion to support the substrate 10 with a small support area, so that the influence of the violation of support on the substrate 10 is reduced. Further, the proximity pin Η can be formed of a plastic material such as a polyether 烷 imine resin, a perfluoroalkoxy resin, or a polycarbonate resin 5 having a low thermal conductivity. Alternatively, instead of being formed entirely of a plastic material in this manner, the body portion of the proximity pin 11 may be formed of a metal material having a high rigidity (for example, a stainless steel material), and only the front end portion thereof may be formed of a plastic material. The proximity pin 11 'is formed, for example, in a range of about 0.01 mm to 5 mm by direct control. The proximity pin 11 may be formed of a single wire, or may be formed of an aggregate of a plurality of thin wires. As shown in FIG. 2, around the pin I on the upper side of the hot plate 2 as shown in the figure, the 15 20 configuration is different from the hot plate 2 by a different component (that is, a separate component) of the heat reducing portion and A temperature adjustment member 13 which is an example of a heat reduction member. As will be described later, the function of the temperature adjustment member 13 is to reduce the light-radiated heat added to the substrate by the top plate portion 3 in the portion where the temperature adjustment member 13 is provided. The temperature adjusting member 13 may be disposed near the upper surface of the hot plate 2, that is, near the upper surface of the top plate portion 3, or near the inner surface of the top plate portion 3. It is arranged so that the temperature adjustment member π is not in direct contact with the heat generating portion 4. ~ Such a temperature adjustment member 13 is not the same as the mode plan view of the temperature adjustment member 13 in Fig. 6, and for example, a ring having an outer peripheral end portion having a substantially circular shape, ~ 2 Gmm, and a thickness of about 2 mm can be used. At this time, the ring-shaped osaki can be formed to have approximately the same size as the diameter of the proximal contact, and the peripheral surface of Ϊ = Π can be connected, or a gap can be formed so that the temperature ° is different from the peripheral surface of the proximal pin 11. Then, the above-mentioned __ is used as a heat-reduction zone for reducing the heat transfer from the temperature-speaking member 13 toward the _____ using 19 200423203. In addition, as the material of the temperature adjusting member 13, a material having a lower thermal conductivity than that of the surface of the hot plate 2 formed of a metal material such as aluminum, such as a synthetic resin such as a polyimide resin and a perfluoroalkoxy resin, is preferably used. Materials with low thermal conductivity such as ceramic materials. In addition, the same material as the surface material of the hot plate 2 or a material having a thermal conductivity similar to that of the surface material may also be used. Alternatively, metal materials including natural gold materials, natural stone materials, and the like may be used. However, it is necessary to have heat resistance to the heating temperature of the hot plate 1, for example, it is preferable to have a heat resistance temperature of about 200 or more. 10) As shown in FIG. 2, the temperature adjustment member I3 can be formed on the top plate portion 3 of the hot plate 2 to form a hole portion consistent with the shape of the temperature adjustment member 13 in order to arrange the temperature. Adjusting member 13. In addition, such an arrangement can be maintained by using a heat-resistant adhesive material, a fixing device, a screw-type fixing device, or the like. Although not shown, a heat-resistant adhesive 15 may be directly adhered to the top plate portion 3 and then fixed to the temperature regulating member 13. By disposing the temperature adjustment member 13 around the proximity pin u of the hot plate 2 in this manner, the heat radiated to the substrate 10 held by the proximity pin U can be adjusted. Specifically, by selecting a material having a lower thermal conductivity than the surface material of the hot plate 2 as the material of the temperature adjustment member 13, the heat radiated from the hot plate 2 to the substrate 10 through the temperature adjustment member Huai 20 can be reduced far. The amount of heat radiated directly from the surface of the hot plate 2 to the substrate 10 around the temperature adjustment member 13 is smaller than that of the heat regulation member 13. In addition, a material having a thermal conductivity close to that of the surface of the hot plate 2 may be selected as the material of the temperature adjustment member η, and the heat radiated to the substrate 10 may be slightly reduced. In addition, even when the same material as the surface material of the hot plate 2 is used, since the contact resistance of the contact surface between the temperature adjustment member 13 and the heat 20 plate 2 can be slightly reduced, the transmission from the hot plate 2 to the temperature adjustment member ^ Therefore, the aforementioned radiant heat can be slightly reduced, and the temperature of the substrate 1G is delicately n cycles. For example, if the surface temperature of the hot plate 2 is about b ° C, the contact resistance can be reduced by about 2 ~ 3. (: Temperature. 5) When the temperature adjustment member 13 is arranged near the upper surface of the hot plate 2, as shown in the pattern illustration of FIG. 3, it may be arranged such that the upper surface of the temperature adjustment member ^ is located on the hot plate. The position above 2 is also high, that is, it is arranged so that the distance between the substrate 10 and the temperature adjustment member 13 is smaller than the distance between the substrate 1 () and the hot plate 2. In this way, for example, even by temperature When the reduction in heat of the radiant heat radiated by the member 朝 10 toward the substrate 10 is too large, the size of the temperature ㈣ between the member 13 and the substrate 1G can be adjusted to reduce the heat reduction to an appropriate amount. As shown in the schematic cross-sectional view of FIG. 4, it can also be arranged so that the upper surface of the temperature adjustment member 13 is located at a lower position than the upper surface of the hot plate 2, that is, disposed between the substrate 10 and the fifth of the temperature adjustment member 13. The gap size is larger than the gap size between the substrate 10 and the hot plate 2. In this way, the heat radiated from the temperature regulating member 13 to the substrate 10 can be reduced compared to the heat directly radiated from the surrounding hot plate 2 to the substrate 1 〇 less heat, with the result that the temperature can be reduced The temperature of the portion of the substrate 10 relative to the temperature adjustment member 13 is lower than that of the surroundings. In addition, the difference between the height 20 position of the temperature adjustment member 13 and the height position of the heat plate 2 should be adjusted to For example, in the range of one (thickness of the top plate portion 3) +5 mm. However, considering the contact position of the temperature adjustment member 13 and the proximity pin 11 as the center, the range of 15 mm in diameter & right is acceptable due to heat transfer In the area affected by the temperature change, once the difference is greater than 20mm, better results cannot be expected. 21 200423203 Furthermore, the shape of the temperature adjustment member 13 is not limited to the shape of the surroundings to form a substantially circular ring. For example, the shape of the outer peripheral end portion of the temperature adjustment member 13 may be a polygonal shape instead of the above-mentioned substantially circular ring. Specifically, as shown in FIG. 7, a peripheral shape may be formed as much as a zigzag shape. The angular temperature 5 degree adjustment member 13A, and a temperature adjustment member 13B forming a regular human angle, as shown in Fig. 8. As the temperature adjustment member 13B, the surrounding shape can be formed into a positive polygon. The shape is approximately circular, and if the temperature adjustment member UA forms a zigzag shape, the boundary line between the hot plate 2 and the temperature adjustment member 13 is blurred, and the temperature adjustment of the opposite substrate is more stable. In addition, as shown in Fig. 9 and Fig. 10, a plurality of members may be arranged around the proximity pin to form the temperature adjustment members 13C and 13D. For example, the temperature adjustment member shown in Fig. 9 is a part of which The ring member ⑽ has a ring-shaped position at the center H of the proximity pin 11 to form a substantially annular shape. I5 and the temperature adjustment member 13 of FIG. 10 are 8 circular members arranged approximately equally on the proximity pin 11 Those who make up the surroundings. In this way, using a large number of components to form a temperature-adjusting component, such as Lang, can also give the function as a temperature-adjusting component by adjusting the shape and interval of each component. In addition to this type of member, in addition to the aforementioned partial ring member 14C and circular member 14D, various shapes such as a triangular member and a square member are used. Of course, it is also possible to mix and arrange members of various shapes. Further, as shown in Fig. 11, a plurality of fine particle members 14E may be arranged around the proximity pin to constitute a temperature adjusting member 13E. In addition, as shown in Fig. 12, a plurality of linear members 14F may be arranged substantially in parallel to constitute 22 200423203 temperature adjustment member 13F. Of course, the arrangement of such linear members 14F can take a variety of patterns, such as arranging in a zongzi shape, arranging in an irregular manner, and the like. The advantages of such temperature adjustment members 13e and 13F are that the arrangement density and material of the particle member 14E and the linear member 14F can be adjusted to slightly adjust the heat reduction ability of the temperature adjustment members 13E and 13F. Further, as shown in FIG. 13, a plurality of linear members 14 may be arranged approximately radially around the proximity pin 11 to constitute a temperature adjustment member 13 (3. As shown in FIG. 14, Many arbitrary shape members 14H can be arranged to form the temperature adjustment member 13H. 10 In addition, when the shape of the temperature adjustment member 13 is formed into a complex shape such as a polygon, the processing of the hot plate 2 and the temperature adjustment member 13 becomes complicated. Therefore, whether the shape of the temperature adjustment member 13 is to be polygonal is selected according to the required film thickness smoothness and the original manufacturing cost of the allowed heating device 101. 15 In addition, in addition to the aforementioned use of the temperature adjustment member 13 In addition to various shapes and configurations, a cooling device can also be installed around the proximity pin π of the hot plate 2. The cooling device can be used to partially reduce the aforementioned surrounding temperature and therefore reduce the radiated heat. In addition, this As the cooling device, a fluid cooling device such as an air cooling pipe and a water cooling pipe, or a cooling blade, etc. may be used. In addition, when using the fluid cooling device of the aforementioned 20, for example, if the air is preferably 60, The flow rate range is from cc / min to 600cc / min. If it is water, the flow rate range is from 6cc / min to 60cc / min. In addition, when using a cooling blade, for example, the surface area (heat transfer area) of the blade should be set relative to the cooling blade The area of the area is about 1.1 to 10 times. 23 200423203 In addition, instead of forming another temperature regulating member 13, the vicinity of the proximity pin 11 on the surface of the hot plate 2 may be set with the center of the proximity pin u as the center. A roughly concentric gap or a concentric polygonal gap. The formation of such a gap can reduce the heat transfer caused by contact heat transfer in the gap portion. As a result, the temperature of the 5 parts can be lower than other parts, which can help reduce radiant heat. In addition, such a gap should be formed in a range of about 1 to about 20. In this way, the temperature adjustment member 13 is arranged around the proximity pin 11 of the hot plate 2 so as to be radiated to the hot plate 2 through the temperature adjustment member 13. The heat of the substrate 10 is reduced less than the heat radiated directly from the hot plate 2 to the substrate 10. By this, 10 can reduce the aforementioned radiant heat to offset the heat transferred through the contact between the proximity pin 11 and the substrate 10, In other words Corresponding to the contact heat transfer heat to reduce the radiant heat, the contact heat transfer is not generated. Therefore, the heat transfer caused by the contact between the proximity pin 11 and the substrate 10 can be prevented from causing the substrate 10 to be in close proximity. The circular high-temperature part with the pin 11 as the center achieves a uniform temperature distribution of the base 15 and plate 10. In addition, the thickness of the substrate 10 to be dried, the volatilization temperature of the material to be coated, the coating amount, etc. can be considered to select the temperature adjustment member. Configuration, shape, and forming material to adjust the aforementioned reduction in radiant heat. Also, when the temperature adjustment member 13 is made of a material having a lower thermal conductivity than the heat plate 2, the temperature of the proximity pin 11 itself can be lowered, which is more effective. 20 and The heat-reducing portion for adjusting the radiant heat applied to the substrate 10 is not limited to the case where the temperature adjusting member 13 is configured as a member. For example, cr is not composed of components, but as shown in Fig. 5, a recessed portion 23 is formed on the heat plate 2 around the proximity pin u, so that the recessed portion 23 functions as the aforementioned heat reducing portion. As shown in FIG. 5, the recessed portion 23 forms a ring of 24 200423203 around the proximity pin of the hot plate 2, and the height position of the inner bottom surface thereof is lower than that of the upper surface of the hot plate 2. The diameter of the outer periphery of the recessed portion 23 may be adjusted to about 0.1 mm to 20 mm and the depth may be 0.001 mm or more. In addition, the shape of the recessed portion 23 is not limited to a ring shape, and can be formed into various shapes such as a polygonal shape in the same manner as the aforementioned temperature regulating member 13. In particular, it is tied to the inner bottom surface of the recess 23, and a depth gradient, for example, is provided toward the center of the connecting pin 11, which is also an effective method for adjusting the radiant heat. This is because the radiant heat applied from the recessed portion 23 to the substrate 10 is inversely proportional to the distance between the inner bottom surface of the recessed portion 23 and the substrate 10. In addition, when setting such a tilt, the tilt angle can be selected within a range of 10 to 90 degrees. Next, the structure of the lift pin 5 will be described. First, FIG. 15 is a schematic cross-sectional view showing a state where the substrate 10 on which the film raw material solution 8 has been applied is supported by a raised pin 5 above the hot plate 2 of the heating device 101. As shown in FIG. 15, a plurality of through holes 6 are formed in the heat plate 2 15 formed by combining the top plate portion 3 and the heat generating portion 4 (In addition, FIG. 15 shows that i through holes are provided therethrough, and the through holes 6 are disposed along the through holes 6. The through hole 6 is raised and lowered, and is used for lifting and holding the substrate 10 and the raising pin 5 at an arbitrary interval from the hot plate 2 during heating of the substrate. The raising pin 5 can be used for non-recording steel and electroplating. Steel, Ming, copper, alloys of the foregoing, etc. are made of plastic materials such as polyweiimide resins, perfluoroalkoxy resins, and polycarbonate carbonate resins, which have a low thermal conductivity. The high lock 5 may not be made of metal material and plastic material in this way, but the whole is formed of the aforementioned plastic material. Because if it can be rigid, the overall thermal conductivity of the heightened lock 5 can be reduced. Also, the heightened lock ^ 25 200423203

如其直徑形成在約〇.5mm〜5mm之範圍内，而配置有該升高 銷5之貫通孔6之孔徑形成較升高銷5直徑大〇〇〇lmm〜2mI 左右。另，欲驅動升高銷5沿貫通孔6進行前述升降，可使 用氣缸、伺服馬達、脈衝馬達等裝置。 5 又，如第15圖所示，熱板2之圖示上面之貫通孔6周圍， 配置由與熱板2不同之另一構件形成（即，由獨立之構件形 成）的減熱部及減熱構件之一例的溫度調節構件7。與前述 配置在近接銷11周圍之溫度調節構件13一樣地，該溫度調 節構件7具有的功能係可在設有溫度調節構件7之部分減低 1〇由頂板部3對基板10施加的輻射熱量。又，可配置溫度調節 構件7之處疋在熱板2之上面附近，即，可在頂板部3之上面 附近，亦可在頂板部3之裡面附近。惟，宜配置成使溫度調 節構件7與發熱部4不直接接觸。 這種溫度調節構件7 ,如第21圖之溫度調節構件7的模 15式平面圖所示，例如，可使用其外周端部具有大略圓形， 其直徑約〇·1〜20mm，厚度o.ooimm以上之環狀者。又，前 述環狀之内控可形成與貫通孔6孔徑大致相同尺寸。又，溫 度調節構件7之材料，宜使用導熱率較鋁等金屬材料形成之 熱板2表面素材還低的材料，例如，聚醯亞胺系樹脂、全氟 20烷氧基系樹脂等合成樹脂，陶瓷材料等導熱率低的材料。 不過，亦可使用與熱板2表面素材同一材料或者導熱率與該 表面素材相近的材料。 又’如第15圖所示，可於熱板2之頂板部3之上面，將 溫度調節構件7嵌人升高銷5周圍，即貫通孔6周圍之形成與 26 200423203 該溫度調節構件7形狀-致之孔部以配置溫度調節構件7。 又’這樣之配置，可使用耐熱性接著劑之接著固定裝置或 螺固或壓入之固定裝置等來保持。 如此地將溫度調節構件7配置在熱板2之貫通孔6周 5圍’可調節輻射到由升高銷5所保持之基板1〇的熱量。具體 而言’藉著選擇導熱率較熱板2表面素材低之材料作為溫产 調節構件7之材料，可將從熱板2崎溫度調節構件7輻H 基板10之熱量，減得遠比溫度調節構件If the diameter is formed in a range of about 0.5 mm to 5 mm, the diameter of the through hole 6 of the raised pin 5 is about 0.001 mm to 2 mI larger than the diameter of the raised pin 5. In addition, to drive the raising pin 5 to perform the aforementioned raising and lowering along the through hole 6, a device such as an air cylinder, a servo motor, and a pulse motor can be used. 5 In addition, as shown in FIG. 15, around the through hole 6 on the upper surface of the hot plate 2, a heat reducing portion and a heat reducing portion formed of another member different from the hot plate 2 (that is, an independent member) are disposed. Temperature regulating member 7 as an example of a thermal member. Like the aforementioned temperature adjustment member 13 disposed around the proximity pin 11, the temperature adjustment member 7 has a function of reducing the radiant heat applied to the substrate 10 by the top plate portion 3 at the portion where the temperature adjustment member 7 is provided. The temperature adjusting member 7 may be disposed near the upper surface of the hot plate 2, that is, near the upper surface of the top plate portion 3, or near the inner surface of the top plate portion 3. However, it is preferable to arrange so that the temperature adjustment member 7 and the heat generating portion 4 do not directly contact each other. Such a temperature adjusting member 7 is shown in a mold 15 type plan view of the temperature adjusting member 7 in FIG. 21. For example, its outer peripheral end portion may have a substantially circular shape, with a diameter of about 0.1 to 20 mm and a thickness of o.ooimm. Those above the ring. In addition, the ring-shaped internal control can be formed to have approximately the same size as the diameter of the through-hole 6. In addition, as the material of the temperature adjustment member 7, it is preferable to use a material having a lower thermal conductivity than the surface material of the hot plate 2 formed of a metal material such as aluminum, for example, a synthetic resin such as polyimide resin, perfluoro20 alkoxy resin , Ceramic materials and other materials with low thermal conductivity. However, the same material as the surface material of the hot plate 2 or a material having a thermal conductivity similar to that of the surface material may be used. As shown in FIG. 15, the temperature adjustment member 7 can be embedded around the raising pin 5 on the top plate portion 3 of the hot plate 2, that is, the formation around the through hole 6 and the shape of the temperature adjustment member 7. -A hole portion is provided to arrange the temperature adjustment member 7. Such an arrangement can be held by a heat-resistant adhesive, a fixing device for screwing, or a fixing device for screwing or pressing. In this way, the temperature adjustment member 7 is disposed in the through hole 6 of the hot plate 2 for six weeks, and the heat radiated to the substrate 10 held by the raising pin 5 can be adjusted. Specifically, 'by selecting a material having a lower thermal conductivity than the surface material of the hot plate 2 as the material of the warming production adjusting member 7, the heat from the hot plate 2 and the temperature adjusting member 7 to the H substrate 10 can be reduced to a far greater temperature. Regulating member

面直純娜默峨少H賴前H 10在近接銷11周圍之溫度調節構件13一樣地，選擇導熱率與 熱板2表面素材相近的材料或使用與該表面素材同一材料 作為溫度調節構件7之材料，以稍微調整前·射熱量，並 微妙地調節基板10之溫度。 又，當將溫度調節構件7配置在熱板2之上面附近時， 15如第16圖之模式截面圖所示，亦可配置成使溫度調節構件7 之上面位於較驗2之上面還高的位置，或者，如第Η圖之 模式截面圖所示’亦可配置成使溫度調Μ件7之上面位於 =熱板^之上面還低的位置。如此—來，與前述近接鎖_ ’皿度肩即構件13 -樣地’可調節由溫度調節構件7輕射到美 2〇板1〇之熱量，以調節基板_當於溫度調節構件7之部分二Straight, straight, pure, innocent, low, H, front, H 10, the same as the temperature adjustment member 13 around the proximity pin 11, choose a material with a thermal conductivity similar to the surface material of the hot plate 2 or use the same material as the surface material as the temperature adjustment member 7 Material to slightly adjust the front and the emitted heat, and finely adjust the temperature of the substrate 10. When the temperature adjustment member 7 is arranged near the upper surface of the hot plate 2, 15 can be arranged such that the upper surface of the temperature adjustment member 7 is higher than the upper surface of the test 2 as shown in the schematic sectional view of FIG. Alternatively, as shown in the schematic cross-sectional view of the second figure, it may be configured such that the upper surface of the temperature adjustment member 7 is located at a position lower than the upper surface of the hot plate ^. In this way, with the above-mentioned proximity lock _ 'shoudu degree of shoulder 13 is the sample 13', the heat emitted from the temperature adjustment member 7 to the US 20 board 10 can be adjusted to adjust the substrate _ when the temperature adjustment member 7 Part two

溫度。 J 又’溫度調節構件7之形狀並不限於其周圍形狀形成大 略®形之環狀者。例如，與前述近接鎖11用溫度調節構件 13-樣地’如第7至14圖所示，其周圍可形成正多角形、鋸 27 齒形狀，或由多數構件構成之形狀等各種形狀，而非前述 大略圓形之環狀。 此外，酿度调玲構件7之形狀可配合考慮貫通孔6和溫 5 :凋即構件7加工之複雜度，依所要求之膜厚平滑性及所允 5許之加熱裝置101之製造原價來選擇。 ▲如此地在熱板2之貫通孔6周圍，即升高銷5周圍配置溫 周節構件7，可將從熱板2隔著溫度調節構件7輕射到基板 ^之熱量，減得比從熱板2直接輻射到基板1〇之熱量還少。 错此，可減少前述輻射熱量來抵銷藉升高銷$與基板1〇之接 觸而傳遞之熱量。因此，可防止由於升高銷5與基板⑺之接 觸而產生之傳熱在基板1〇造成以升高銷5所在位置為中心 的圓形高溫部分，達成基板10溫度分布均一化。另，可考 慮欲乾燥之基板10之厚度、欲塗布材料之揮發溫度、塗布 量等來選擇溫度調節構件7之配置、形狀、形成材料，以調 15節前述輻射熱量之減少量。 20 又，用以調節對基板10施加之輻射熱的減熱部，並不 限於以構件構成的情形。舉例而言，亦可不以構件構成， 而是如第18圖所示，於貫通孔6周圍之熱板2上面形成凹部 27，令該凹部27發揮前述減熱部之功能。如第18圖所示°， 凹部27於熱板2之貫通孔6周圍形成環狀，其内底表面之言 度位置形成較熱板2之上面低。另，將該凹部η之外朽直^ 調節為約0.1〜20mm，深度為〇.〇imm#上即可。又 凹部27 之形狀，不只環狀，可與前述溫度調節構件一樣地，形成 多角形狀等各種形狀。 / 28 200423203 又，如第19圖之模式截面圖所示，為調節朝由各升高 銷5支持之狀態之基板1〇的上升氣流，熱板2之貫通孔6之孔 徑亦可在熱板2之上面附近擴大。例如，如第19圖所示，於 熱板2之上面之貫通孔6開口部形成大略環狀之段部仏，可 5使在前述上面附近之孔徑擴大。另，令熱板2之上面之貫通 孔6之前述開口部口徑為直徑約5〜20mm，其深度約lmm以 上即可。 如此地，熱板2之貫通孔6之孔徑在熱板2之上面附近擴 大’可使沿著貫通孔6筆直上升之上升氣流在碰到基板1〇之 10前就擴散，即，可使其在熱板2表面之貫通孔6開口部出口 附近擴散。因此，可使這種因貫通孔6内之上升氣流導致之 基板10溫度不均變成均一。 又，前述擴大之貫通孔6開口部之形狀並不限於大略圓 形（筒狀），而是可形成正六角形、正八角形等多角形、如 15鋸齒形狀之多角形等各種形狀。例如，若將前述開口部之 形狀形成多角形，於前述開口部就可使沿貫通孔6產生之上 升氣流更擴散，以抑制基板1〇之溫度急遽變化，使溫度調 節更精密。 又’亦可在使熱板2之貫通孔6孔徑在熱板2之上面附近 2〇擴大的同時，一併使用溫度調節構件7。藉這樣的結構，可 更周密地調節基板10之溫度。另，如第19圖所示之貫通孔6 開口部擴大的形態，亦可是同時於貫通孔6周圍形成有凹部 27的形態，以獲得設置凹部27而產生之輻射熱量減少效果。 又，如第20圖所示，為調節朝基板1〇之上升氣流，亦 29 200423203 可於升高銷5周圍設置用以遮擋來自貫通孔6下部之上升氣 流的遮蔽板9。藉遮蔽板9，可更積極地使呈筒狀上升之氣 流擴散。遮蔽板9，可係設置在從升高銷5頂部向下約 〇·1〜10mm之下部位置之直徑較升高銷5直徑大約丨…腿 5之環狀者。亦可藉遮蔽板9之安裝位置及其直徑，來完全塞 住貫通孔6，以完全封閉上升氣流。 另外，遮蔽板9之形狀，不只環狀（圓形），亦可形成 正/、角形、正八角形等多角形或如錯齒形狀之多角形。遮 蔽板9右形成多角形，可使上升氣流更擴散，以抑制基板1〇 10之溫度急遽變化，使溫度調節更精密。 又，亦可在使用遮蔽板9的同時，一併使用溫度調節構 件7。又，亦可在使用遮蔽板9的同時，一併使熱板2之貫通 孔6孔徑在熱板2之上面附近擴大。藉這樣的結構，可更周 密地調節基板10之溫度。另，關於配置在升高銷5周圍之溫 I5度調節構件7的構造，g己合參照前述之配置在近接銷u周圍 之溫度調節構件13的構造例，有各種形態可供選擇。 接下來，返回第1圖，針對包含有這種近接銷11及升高 銷5以及兩者各自之溫度調節構件13、7的加熱裝置101整 體結構，再詳細地說明。 20 如第1圖所示，在加熱裝置101之熱板2之上面大略中央 附近配置有近接銷u，此外，熱板2上面之*個角部附近各 配置有可貝通孔6升降之升高銷5。又，近接銷η周圍設 有/皿度调即構件13，另外，各升高銷5周圍，即各貫通孔6 周圍設有溫度調節構件7。 30 200423203 又，基板10表面，除其周圍部外，皆藉印刷供給膜原 料溶液而形成有印刷圖案10a。加熱裝置101具有用以保持 該基板10之未形成有印刷圖案l〇a之端部的多數升高爪 16。各升高爪16是固定於裝設在熱板2外側呈可升降狀態之 5 大略棒狀的爪支持構件15,其可使各升高爪16—體地升降。 又，熱板2下方設有可使各升高銷5及各升高爪16—體 地升降的升降驅動機構9。此外，加熱裝置101設有可一邊 支持基板10下面，一邊進行基板10之搬入及搬出的機器臂 17 ° 10 此外，加熱裝置1〇1具有控制裝置（未圖示），其可相 關且總括地進行機器臂17搬入及搬出基板10之動作、熱板2 加熱基板10之動作、升降驅動機構9升降各升高銷5及升高 爪16之動作的各種動作控制。藉此種控制裝置相關且總括 地進行加熱裝置101各構成部之動作控制，即可進行用以於 15 基板10形成薄膜的加熱處理。 接著，以下針對在具有前述結構之加熱裝置101，對所 搬入之基板10進行之加熱處理的步驟加以說明。另，以下 所示之各動作係由前述控制裝置相關且總括地進行。 首先，第1圖所示之加熱裝置101之狀態，係藉升降驅 2〇 動機構9 ’各升南銷5及各升南爪16已位在較近接銷11前端 還上方位置的上升位置。位於該上升位置時，各升高銷5之 前端位置及各升高爪16之支持端位置是大致同一位置。之 後，藉機器臂17之移動，將其下面由機器臂17支持之狀態 之基板10搬到熱板2之上方，並傳遞基板10，使位在前述上 31 200423203 升位置之狀態之各升高銷5及各升高爪16來支持基板10下 面。另，為保持將基板10從機器臂17傳遞至各升高銷5時之 而度位置精度，可決定各升高銷5之配置及機器臂17之形狀 等’使各升高銷5位在前述上升位置時，各升高銷5之前端 5可位於機器臂17附近。在傳遞該基板10後，機器臂17可移 動從熱板2上方退避。 然後，處於正支持著基板10之狀態之各升高銷5及各升 高爪16，藉升降驅動機構9，一邊保持各自之高度位置，一 邊一體地下降，使基板10接近熱板2上面。一旦基板1〇下面 10觸接到設在熱板2大略中央附近之近接銷11前端，就停止基 板10之下降動作，變成同時亦藉近接銷丨丨支持著基板1〇的 狀態。 由於各升南爪16是在基板10之未形成有印刷圖案 之位置支持基板10，所以即使是在前述下降動作後，進行 15加熱處理時，依然與近接銷11 一齊支持基板1〇。另一方面， 由於各升高銷5是在印刷圖案l〇a内支持基板1〇，所以為求 縮短各升高銷5與基板10之接觸時間，以降低對基板1〇之熱 影響，就有別於各升南爪16而另外使各升高銷$更下降。呈 體而言，升降驅動機構9，藉由與驅動馬達串列連接之氣缸 20 (未圖示），僅使各升高銷5更下降而不使各升高爪16下 降。藉此，基板10呈現與熱板2上面保持預定間隔的狀態， 且是由近接銷11及各升高爪16加以支持的狀態。 之後，保持在該狀態下，開始由來自熱板2表面之輻射 熱量加熱基板10 ’以進行基板10上之印刷圖案1〇a的乾燥處 32 200423203 理。在此，基板10適才與各升高銷5接觸之部分及其周圍附 近’由於與升賴5賴㈣生之傳熱及絲自貫通孔6之 上升氣流接觸，所以會被施加較其他部分更多熱量，如此 而導致局部溫度上升，但是，可藉設在各貫通孔G周圍之溫 5度調節構件7減低輻抛加之熱量，來防止前述局部溫度上 升。 又，在前述加熱處理期間，用以一邊與基板1〇接觸一 邊支持該基板10的近接銷11，藉由該接觸而產生之傳熱對 基板10持續施加額外熱量，但是，可在近接鎖叫圍設置 溫度调卽構件13減低輻射施加之熱量，來防止前述接觸部 分之局部溫度上升。因此，在前述加熱處理時，可使基板 10溫度分布呈大致均-狀態，且即使是在稍微有溫度變化 之處，也可使其溫度變化之梯度呈平緩狀態。另，由於各 升高爪16是在基板10未形成有印刷圖案1〇a之位置支持基 15板10，所以在前述加熱處理時，即使由於接觸而產生之傳 熱對基板10施加額外熱量，仍然不會使印刷圖案1〇a之品質 受到影響。 如前述，本發明在前述加熱處理時，使基板1〇之溫度 分布呈大致均一狀態，且即使有溫度變化之梯度產生，還 20是可使該梯度平緩，藉此不致因該加熱處理而產生局部溫 度上升部分。因此，可使印刷圖案l〇a膜厚大致均一，不會 因前述局部溫度上升而產生熱像。 對基板10施行了預定時間之加熱處理後，停止熱板2 之輻射，同時藉升降驅動機構9升高各升高銷5以與基板1〇 33 200423203 下面觸接，且進而使各升高爪16與各升高銷5—體地上升來 使基板10上升以與熱板2表面有間隔，並解除近接銷11對基 板10之支持。之後，當基板10上升到前述上升位置，便停 止藉升降驅動機構9升高各升高銷5及各升高爪16。在此狀 5 態下，驅動機器臂17去支持基板10並將之搬出加熱裝置 101。藉此，完成用以使印刷在基板10之印刷圖案10a乾燥 之加熱處理。 此外，當欲施行前述加熱處理之基板10為小型基板 時，可僅藉用以支撐沒有印刷圖案10a存在之基板1〇周邊的 10 各升高爪16來支持基板10，所以未必一定要有各升高銷5或 近接銷11，因而不致發生由於前述接觸而產生之傳熱造成 局部溫度上升的問題事態。然而，通常，作為液晶面板使 用之基板10 (例如，厚度0.7mm之基板），若基板10之長邊 在600mm以下，是與前述小型基板一樣地，可僅藉各升高 15 爪16來支持，但是，一旦基板10之長邊具有600mm以上長 度時，為了要一邊保持基板10呈大致水平狀態一邊確實地 支持基板10，就必須如加熱裝置101所示，一定要有各升高 銷5及近接銷11。另，為了確實地支持這種基板10 ,宜相距 約300mm之間隔來配置基板支持銷等支持構件。 20 又，由於各升高銷5與基板10之接觸時間約例如1〇秒左 右之短，且各升高銷5在印刷在基板10之膜原料溶液8幾乎 將乾燥之前的微妙時間（即，溫度分布不均更易影響膜厚 變化之時間）並不與基板10接觸，所以其減熱程度較近接 銷11稍小也無妨。相反地，近接銷11與基板10接觸約60秒 34 200423203 鐘，直到前述微妙時間，故其減熱程度可說是較升高銷5大。 (實施例1) 接著，以下利用實施例1說明前述實施形態之加熱裝置 101所用之近接銷11及溫度調節構件13的實施例。 5 本實施例1，採用了前述實施形態說明中所用之第3圖 模式截面圖所示之形態的加熱裝置101結構。具體而言，如 第3圖所示，使用由厚i〇mm之鋁製頂板部3及發熱部4構成 者作為熱板2。又，使用由烏魯特姆（登錄商標：ULTEM : 聚醚醯亞胺）構成直徑3mm之尖頂物作為近接銷η。又， 10使用由烏魯特姆（登錄商標）構成之外徑10mm ,厚l〇mm 之環狀者作為溫度調節構件13，且使溫度調節構件13上面 位在較熱板2上面高1mm處。 又，使用厚0.7mm之鈉玻璃作為基板10。又，膜原料 溶液8，即塗布材料，是使用含6%之聚醯胺酸且αΝΜρ為 15主洛劑之液晶配向膜用墨水（日產化學工業公司（Nissan Chemical Industries Ltd·;日産化学工業株式会社）製桑安巴 SE_7492，062M)，於基板1〇上塗布約如丨/以。 然後，藉近接銷11保持基板10位在熱板2上方2 5mm的 咼度位置，且藉已加熱到145°C之熱板2之輻射熱加熱，使 20液曰曰配向膜用墨水乾燥。該加熱處理時，溫度調節構件13 之表面溫度為ll〇°C。 如此進行而獲得之液晶配向膜，幾乎觀察不到有任何 乾燥不均。在此，於第23B圖顯示離近接銷U中心之距離與 基板10表面溫度之間的關係，作為前述加熱處理時之基板 35 200423203 10表面溫度的測量結果。第23B圖，橫軸表示離近接銷u 中心之距離（mm)，縱軸表示基板10之表面溫度（。〇。更 進一步’第23A圖係沿基板1〇表面之方向二維地顯示該表面 /JZL度與距離之關係的專溫線分布圖。另，第23A圖之等溫線 5分布圖，係假設第23B圖表所示之始自近接銷11中心之負向 溫度分布為整體溫度分布，而顯示成為丨它單位之等溫線分 布0 如第23A圖及第23B圖所示，基板1〇與近接銷丨丨接觸之 處（即，圖示距離0mm之位置）與其他處幾乎沒有溫度差。 1〇 (比較例1) 其次，相對於該實施例1之比較例丨，除了是將近接銷 直接埋入熱板以外，其餘皆與實施例丨一樣，但是所獲得之 液晶配向膜，清楚觀察到乾燥不均。又，與前述實施例1 一 樣地，於第24B圖顯示用以呈現離近接銷中心之距離與基板 15表面溫度之間關係的圖表，作為加熱處理時之基板表面溫 度的測量結果；第24A圖顯示用以平面地呈現第24B圖之溫 度測量結果的等溫線分布圖。如第24A圖及第24B圖所示， 本比較例1，基板與近接銷接觸之處的溫度較其他處約高8 °C，已可明白確認有局部溫度上升部分。 20 (實施例2) 接著，以下利用實施例2說明前述實施形態之加熱裝置 101所用之升高銷5及溫度調節構件7的實施例。 本實施例2,係使用組合前述實施形態說明所用之各種 裝置而構成如第22圖模式截面圖所示的溫度調節構件7。具 36 200423203 體而-如第22圖所示，使用由厚1〇mm之銘製頂板部认 各熱口Μ構成者作為熱板2。又，使用以不鱗鋼為主材，烏 _寺姆（且錄商;f*)為前端部材料之尖頂物作為升高銷5。 結板2之頂板部3形成直徑15麵之貫通孔6，並將溫度調 5節構件7丧入。③度調節構件7,係下部以由銘構成之外徑 15mm ’内徑5mm，厚度5麵之環狀者作為下部溫度調節構 件7a上相由烏魯特姆（登錄商標）構成之外徑15咖， 内徑7麵，厚度《5mm之環狀者作為上部溫度調節構件 几，如此配置成積層構造，並使上部溫度調節構件几上面 10位在較熱板2上面低〇.5mm之處。 又，使用厚0.7mm之鈉玻璃作為基板1〇。又，膜原料 溶液8，即塗布材料，是使用含6%之聚酿胺酸且以觀p為 主溶劑之液晶配向膜用墨水（日產化學工業公司㈤_ Chemical Industries Ltd.;日産化学工業株式会社）製桑安巴 15 SE-7492 ’ 062M)，於基板 1〇上塗布約 i 2ml/m2。 然後，在熱板2上方50mm之高度位置，使升高鎖5與基 板1〇襄面接觸H)秒鐘，再使升高錦5下降後，保持基板職 在熱板2上方2.5mm的高度位置，且藉已加熱則价之熱 板2之輻射熱加熱’使液晶配向膜用墨水乾燥。該加熱處理 2〇 時’溫度调卽構件7之表面溫度為1 。 如此進行而獲得之液晶配向冑，幾钱察不到有任何 乾燥不均。在此，於第25B圖顯示離升高銷5中心之距離與 基板10表面溫度之間的關係，作為前述加熱處理時之基板 1〇表面溫度的測量結果。第25B圖，橫軸表示離升高銷5中 37 200423203 心之距離（mm)，縱軸表示基板10之表面溫度（°c )。更進 一步，第25A圖係沿基板1〇表面之方向二維地顯示該表面溫 度與距離之關係的等溫線分布圖。 如弟25A圖及弟25B圖所示，基板1〇與升高銷接觸之處 5 (即，圖示距離〇mm之位置）與其他處幾乎沒有溫度差。 (比較例2) 其次，相對於該實施例2之比較例2，除了是使用具有 直徑5mm之貫通孔之熱板以外，其餘皆與前述實施例2一 樣，但是所獲得之液晶配向膜，清楚觀察到乾燥不均。又， 10與前述實施例2—樣地，於第26B圖顯示用以呈現離升高銷 中心之距離與基板表面溫度之間關係的圖表，作為加熱處 理時之基板表面溫度的測量結果；第26A圖顯示用以平面地 呈現第26B圖之溫度測量結果的等溫線分布圖。如第26A圖 及第26B圖所示’本比較例2，基板與升高銷接觸之處的溫 1S度較其他處約高4°C，已可明白確認有局部溫度上升部分。 依照前述實施形態，可獲得以下種種效果。 首先’當欲藉用以使膜原料溶液8乾燥之加埶處理，於 已印刷或塗布有膜原料溶液8之基板1〇形成薄膜時即使藉 近接銷u對基板1〇進行接觸支持或者藉升高銷$對基板1〇 2〇進行接觸支持，仍然不會產生局部溫度變化部，可使基板 10溫度分布呈均—狀態。結果，可使供料基板10上之膜 原料溶液⑽大致均-狀態乾燥，而不會產生局部乾燥速度 差異，讓藉該乾燥形成之薄膜膜厚均一。 具體而言，習知加熱方法，由於近接鎖5U或升高銷505 38 200423203 與基板510之接觸而產生之傳熱，會在從熱板5〇2輻射出之 熱量之外，額外施加該傳熱之熱量，因此，造成基板之前 述銷周圍溫度上升，本發明之前述實施形態，係在各銷U、 5周圍設置溫度調節構件13、7來將來自該部分之輕射紙量 5減得較端部分少，以防止前述溫度上升。 又，可選擇这些溫度調節構件13、7之材質、形狀、配 置等’以微妙地調節前述轄射熱量來找出最佳條件。 又即使疋不使用這種為獨立構件之溫度調節構件， 仍然可藉著將各銷U、5周圍之熱板2表面與基板聞的⑬ « 1〇離較其他部分增大，以獲得輻射熱量會隨著距離愈遠愈衰 減的效果，防止與各銷11、&gt; Μ、 ^ 期1 5接觸之部分之基板10局部溫度 上升。 此外，對於在配置著可升降之升高銷5之貫通孔6所產 生的上升氣流，可擴大熱板2表面之貫通孔6開口部，來使 15上升氣流在該開口部附近擴散，以降低由於與上升氣流接 觸k成基板10溫度分布受到的影塑。 又’在貫通孔6内之升高銷5周圍設置可使上升氣流冑 _ 散之遮蔽板9，亦極為有效。 又，這種加熱裝置1〇1所處理之基板10要求的溫度分布 20均—性（或溫度不均），一般是在土代以内，不過，這樣 的條件亦適用於平緩之溫度梯度（約rc/1〇cm以下之溫度 ^度而即使是在前述條件範圍内，卻產生局部急陡部分 時，還是會成為問題所在。舉例而言，習知加熱處理時， 與升高销接觸之部分，產生lt/0.4cm如此局部急陡之溫度 39 200423203 梯度’又，與近接銷接觸之部分，則可推斷產生了約是此 之2〜5倍的局部急陡之溫度梯度。然而，依前述實施形態之 加熱處理’使用溫度調節構件等，就可使局部溫度梯度變 成平緩’例如約l°C/3cm。 5 又’ 一般若是液晶用配向膜用途之基板，所形成之聚 醯亞胺膜的膜厚大多設定為500〜1200A。這種情形時，所要 求之膜厚範圍通常要在約± 5〜7%之範圍，不過除此外，還 要加上目視所形成之聚醯亞胺膜時無法辨認出不均的條 件。在此’所謂「目視」，係指視覺可察覺因微小膜厚差而 10產生干擾色造成之色差，而非聚醯亞胺膜原本之色。這種 干擾色之目視，尤其有時可在加熱處理之乾燥過程中確 濕。一般，此「目視」之條件很嚴格，基板整體之大的彎 曲之不均若膜厚範圍在± 5%以内，是幾乎不會察覺，但 是，與銷接觸之部分，局部產生之熱像之不均卻極為明顯。 15例如’由於用以測量形成在基板上之薄膜膜厚的膜厚測量 機無法充分測出膜厚之不均，所以推測認為相對於丨。〔/化㈤ 之/皿度梯度’產生約1GA/em之膜厚梯度，可實現將梯度抑 制到此程度為止之梯度。 另，可適當地組合前述各種實施形態中任一實施形 20態，以發揮各自具有之效果。 本卷明充分纪載著配合參照附加圖示來說明之較佳實 加开八、過為此所屬技術領域中具有通常知識者，當可 輕易作種種變形或修正。這類變形或修正只要不脫離申請 專利範圍之本發明範圍，就包含在本發明内。 40 200423203 I：圖式簡單說明3 第1圖係顯示本發明實施形態之一之加熱裝置構造的 模式立體圖。 第2圖係前述加熱裝置的部分模式截面圖，其顯示於近 5 接銷周圍配置著其上面是與熱板上面大致同高度位置之溫 度調節構件的狀態。 第3圖係前述加熱裝置的部分模式截面圖，其顧示於近 接銷周圍配置著其上面位於較熱板上面還上方之高度位置 之溫度調節構件的狀態。 10 第4圖係前述加熱裝置的部分模式截面圖，其顯示於近 接銷周圍配置著其上面位於較熱板上面還下方之高度位置 之溫度調節構件的狀態。 第5圖係前述加熱裝置的部分模式截面圖，其顯示於近 接銷周圍配置凹部的狀態。 15 第6圖係第2圖之溫度調節構件的模式平面圖。 第7圖係第6圖之溫度調節構件之形狀變形例，其顯示 具有鋸齒之多角形狀者。 第8圖係第6圖之溫度調節構件之形狀變形例，其顯示 具有正八角形狀者。 20 第9圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數之部分圓環構件構成者。 第10圖係第6圖之溫度調節構件之形狀變形例，其顯示 由多數圓形構件構成者。 第11圖係第6圖之溫度調節構件之形狀變形例，其顯示 41 200423203 由夕數微細粒子構件構成者。 二之形狀變形例，其顯示 5 之3圖係第6圖之溫度調節構件之形狀變形例，其顯示 由夕數線狀構件配置成放射狀而構成者。 夕第！4圖係第6圖之溫度調節構件之形狀變形例 ，其顯示 由夕數任意形狀構件構成者。 第15圖係前述加熱裝置的部分模式截面圖，其顯示於 10 =銷之貫通孔周圍配置著其上面是與熱板上面大致同高 又位置之溫度調節構件的狀態。 第16圖係前述加熱裝置的部分模式截面圖，其顯示於 升=銷之貫通孔周圍配置著其上面位於較熱板上面還上方 之回度位置之溫度調節構件的狀態。 15 第17圖係前述加熱裝置的部分模式截面圖，其顯 料銷之貫通關圍配置著其上面位於較熱板上面還下方 之鬲度位置之溫度調節構件的狀態。 第18圖係前述加熱裝置的部分模式截面圖，其顯示於 升高銷之貫通孔周圍形成凹部的狀態。 、 20 一第19圖係前述加熱裝置的部分模式截面圖，其顯 高銷之貫通孔之開口部擴大的狀態。 第20圖係前述加熱襄置的部分模式截面圖其顯示於 升南銷周圍設有遮蔽板的狀態。 μ 第21圖係第15®之溫朗節構件的模式平面圖。 第22圖係顯示本發明實_2之加熱裝置之升高銷周 42 200423203 圍構造的模式截面圖。 第23A圖及第23B圖係顯示實施例丨使用近接銷時之基 板溫度分布的圖，第23B圖係離近接銷中心之距離與基板表 面溫度之間關係的圖表，第23A圖係顯示依據第23B圖表畫 5出之基板表面2維溫度變化的等溫線分布圖。 第2 4 A圖及第2 4 B圖係顯示比較例丨使用近接銷時之基 板溫度分布的圖，第24B圖係離近接銷中心之距離與基板表 面溫度之間關係的圖表，第24A圖係顯示依據第24B圖表畫 出之基板表面2維溫度變化的等溫線分布圖。 10 第25A圖及第25B圖係顯示實施例2使用升高銷時之基 板溫度分布的圖，第25B圖係離升高銷中心之距離與基板表 面溫度之間關係的圖表，第25A圖係顯示依據第25B圖表晝 出之基板表面2維溫度變化的等溫線分布圖。 第26A圖及第26B圖係顯示比較例2使用升高銷時之基 15板溫度分布的圖，第26B圖係離升高銷中心之距離與基板表 面溫度之間關係的圖表，第26A圖係顯示依據第26B圖表畫 出之基板表面2維溫度變化的等溫線分布圖。 第27圖係顯示習知加熱裝置構造的模式戴面圖。 【圖式之主要元件代表符號表】 2,502···熱板 3…頂板部 4...發熱部 5,505.··升高銷 6,506···貫通孔 6 a…段部 7，13，13八，13：6，13(：，130，13民13卩，130，1311..溫度調節構件 7a…下部溫度調節構件 43 200423203 7b...上部溫度調節構件 8.. .膜原料溶液 9.··升降驅動機構；遮蔽板 10,510·.·基板 10a...印刷圖案 11，511…近接銷 14C...部分圓環構件 14D.··圓形構件 14E...粒子構件 14F，14G...線狀構件 14H...任意形狀構件temperature. The shape of the J &apos; temperature adjusting member 7 is not limited to those having a substantially ®-shaped ring shape. For example, as shown in FIGS. 7 to 14, the temperature regulating member 13 for the proximity lock 11 described above may have various shapes such as a regular polygon, a sawtooth shape, or a shape composed of a plurality of members. Not the aforementioned roughly circular ring. In addition, the shape of the brewing tone adjusting member 7 can be matched with the consideration of the through hole 6 and the temperature 5: the complexity of the processing of the member 7, according to the required film thickness smoothness and the allowable manufacturing cost of the heating device 101. select. ▲ In this way, around the through hole 6 of the hot plate 2, that is, around the raising pin 5, the heat cycle member 7 can be lightly radiated from the hot plate 2 to the substrate ^ through the temperature adjustment member 7, which can reduce the heat from The heat radiated directly from the hot plate 2 to the substrate 10 is still small. In this case, the aforementioned radiant heat can be reduced to offset the heat transferred by the contact between the raised pin and the substrate 10. Therefore, it is possible to prevent the heat transfer caused by the contact between the raised pin 5 and the substrate ⑺ from forming a circular high-temperature portion centered on the position of the raised pin 5 on the substrate 10, and to achieve uniform temperature distribution on the substrate 10. In addition, the configuration, shape, and forming material of the temperature adjustment member 7 may be selected in consideration of the thickness of the substrate 10 to be dried, the volatilization temperature of the material to be coated, the coating amount, and the like, so as to adjust the reduction amount of the aforementioned radiant heat in 15 sections. 20 Also, the heat-reducing portion for adjusting the radiant heat applied to the substrate 10 is not limited to a case where it is constituted by a member. For example, instead of being constituted by a member, as shown in FIG. 18, a recessed portion 27 is formed on the hot plate 2 around the through hole 6, so that the recessed portion 27 functions as the aforementioned heat reducing portion. As shown in Fig. 18, the recess 27 is formed in a ring shape around the through hole 6 of the hot plate 2, and the position of the inner bottom surface is lower than that of the upper surface of the hot plate 2. In addition, the recessed portion η may be adjusted to approximately 0.1 to 20 mm, and the depth may be 0.00 mm. Further, the shape of the recessed portion 27 is not limited to a ring shape, and can be formed into various shapes such as a polygonal shape in the same manner as the aforementioned temperature regulating member. / 28 200423203 In addition, as shown in the schematic cross-sectional view of FIG. 19, in order to adjust the ascending airflow toward the substrate 10 supported by each raising pin 5, the aperture of the through hole 6 of the hot plate 2 can also be adjusted on the hot plate. The area near 2 is enlarged. For example, as shown in Fig. 19, a substantially ring-shaped section 开口 is formed in the opening portion of the through hole 6 on the upper surface of the hot plate 2, so that the aperture near the upper surface can be enlarged. The diameter of the opening of the through hole 6 on the upper surface of the hot plate 2 may be about 5 to 20 mm in diameter, and the depth may be about 1 mm or more. In this way, the aperture of the through hole 6 of the hot plate 2 is enlarged near the upper surface of the hot plate 2 so that the ascending air flow rising straight up through the through hole 6 can be diffused before it hits the substrate 10-10, that is, it can be made It diffuses in the vicinity of the exit of the opening of the through-hole 6 on the surface of the hot plate 2. Therefore, it is possible to make the temperature unevenness of the substrate 10 caused by the rising airflow in the through hole 6 uniform. The shape of the opening of the enlarged through-hole 6 is not limited to a substantially round shape (cylindrical shape), but various shapes such as a regular hexagon, a regular octagon, and a 15-toothed polygon. For example, if the shape of the aforementioned opening is formed in a polygonal shape, the ascending airflow generated along the through hole 6 can be more diffused in the aforementioned opening, so as to suppress the rapid change in the temperature of the substrate 10 and make the temperature adjustment more precise. It is also possible to use the temperature adjustment member 7 together while expanding the hole diameter of the through-hole 6 of the hot plate 2 near the upper surface of the hot plate 2. With this structure, the temperature of the substrate 10 can be adjusted more thoroughly. In addition, as shown in FIG. 19, the opening of the through-hole 6 is enlarged, and a form in which a recessed portion 27 is formed around the through-hole 6 at the same time can be obtained to reduce the radiant heat generated by providing the recessed portion 27. In addition, as shown in FIG. 20, in order to adjust the upward airflow toward the substrate 10, a shielding plate 9 may be provided around the elevation pin 5 to block the upward airflow from the lower portion of the through hole 6. The shielding plate 9 can more actively diffuse the airflow having a cylindrical shape. The shielding plate 9 may be a ring having a diameter which is about 0.1 to 10 mm from the top of the raised pin 5 and lower than that of the raised pin 5 and the leg 5 is circular. It is also possible to completely block the through hole 6 by the installation position of the shielding plate 9 and its diameter to completely close the updraft. In addition, the shape of the shielding plate 9 is not limited to a ring shape (circular shape), but can also be formed into a polygonal shape such as a regular shape, an angular shape, a regular octagonal shape, or a polygonal shape such as a staggered tooth shape. The right side of the shielding plate 9 is formed in a polygonal shape, so that the upward air flow can be more diffused, so as to suppress the rapid change of the temperature of the substrate 10 and make the temperature adjustment more precise. It is also possible to use the temperature regulating member 7 together with the shielding plate 9. It is also possible to use the shielding plate 9 while increasing the diameter of the through hole 6 of the hot plate 2 near the upper surface of the hot plate 2. With this structure, the temperature of the substrate 10 can be adjusted more closely. In addition, regarding the structure of the temperature I5 degree adjusting member 7 arranged around the raising pin 5, referring to the aforementioned structural example of the temperature adjusting member 13 arranged around the proximity pin u, there are various forms to choose from. Next, referring back to FIG. 1, the overall structure of the heating device 101 including the proximity pin 11 and the raising pin 5 and the respective temperature adjusting members 13 and 7 will be described in detail. 20 As shown in FIG. 1, a proximity pin u is arranged near the approximate center of the upper surface of the hot plate 2 of the heating device 101. In addition, each of the * corners on the upper surface of the hot plate 2 is provided with a lifting hole 6 for lifting. High sales 5. A temperature adjusting member 7 is provided around the proximity pin η, and a temperature adjusting member 7 is provided around each of the raising pins 5, that is, around each of the through holes 6. 30 200423203 In addition to the peripheral portion of the substrate 10, a printed pattern 10a is formed by printing and supplying a film material solution. The heating device 101 includes a plurality of raised claws 16 for holding the end portion of the substrate 10 on which the printed pattern 10a is not formed. Each of the raised claws 16 is fixed to 5 approximately rod-shaped claw supporting members 15 installed on the outer side of the hot plate 2 in a liftable state, which can raise and lower the raised claws 16 integrally. Further, an elevating driving mechanism 9 is provided under the hot plate 2 to elevate the lifting pins 5 and the lifting claws 16 in one body. In addition, the heating device 101 is provided with a robot arm capable of carrying in and out of the substrate 10 while supporting the underside of the substrate 10 17 ° 10 In addition, the heating device 101 has a control device (not shown), which can be relevant and comprehensive Various operation controls are performed for the robot arm 17 to move the substrate 10 in and out, the hot plate 2 to heat the substrate 10, and the lifting drive mechanism 9 to raise and lower the lifting pins 5 and the lifting claws 16. With this kind of control device, the operation control of each component of the heating device 101 is performed in a related and collective manner, and the heat treatment for forming a thin film on the substrate 10 can be performed. Next, the steps of the heat treatment performed on the carried-in substrate 10 in the heating device 101 having the aforementioned structure will be described below. It should be noted that each operation shown below is performed in a related and collective manner by the aforementioned control device. First of all, the state of the heating device 101 shown in FIG. 1 is that each of the south pin 5 and the south claw 16 of the lifting drive 20 driving mechanism 9 ′ has been positioned near the front end of the connecting pin 11 and above the rising position. When located in this raised position, the front end position of each raised pin 5 and the support end position of each raised claw 16 are substantially the same position. Then, by moving the robot arm 17, the substrate 10 under the state supported by the robot arm 17 is moved above the hot plate 2, and the substrate 10 is transferred to raise each of the states in the above-mentioned upper position of 200423203203. The pins 5 and the raised claws 16 support the lower surface of the substrate 10. In addition, in order to maintain the position accuracy when the substrate 10 is transferred from the robot arm 17 to each of the lifting pins 5, the configuration of each of the lifting pins 5 and the shape of the robot arm 17 can be determined so that each of the lifting pins 5 is positioned at In the aforementioned raised position, the front end 5 of each raised pin 5 may be located near the robot arm 17. After transferring the substrate 10, the robot arm 17 can be moved and retracted from above the hot plate 2. Then, each of the raising pins 5 and the raising claws 16 which are in a state of supporting the substrate 10 is lowered integrally while maintaining the respective height positions by the lifting driving mechanism 9, so that the substrate 10 approaches the upper surface of the hot plate 2. Once the lower surface 10 of the substrate 10 contacts the front end of the proximity pin 11 provided near the approximate center of the hot plate 2, the lowering operation of the substrate 10 is stopped, and the substrate 10 is also supported by the proximity pin 丨 丨. Since each of the rising claws 16 supports the substrate 10 at a position where the printed pattern is not formed on the substrate 10, the substrate 10 is supported with the proximity pin 11 even when the heating process is performed 15 after the aforementioned lowering operation. On the other hand, since each raised pin 5 supports the substrate 10 in the printed pattern 10a, in order to shorten the contact time between each raised pin 5 and the substrate 10 to reduce the thermal influence on the substrate 10, Different from each rising south claw 16, each raising pin $ is further decreased. As a matter of fact, the lift driving mechanism 9 is configured to lower only each of the raising pins 5 without lowering each of the raising claws 16 by an air cylinder 20 (not shown) connected in series to the driving motor. Thereby, the substrate 10 is in a state of maintaining a predetermined distance from the upper surface of the hot plate 2 and is in a state of being supported by the proximity pin 11 and each of the raising claws 16. After that, in this state, the substrate 10 'is heated by the radiant heat from the surface of the hot plate 2 to dry the printed pattern 10a on the substrate 10. Here, the portion of the substrate 10 that is in contact with each of the rising pins 5 and the vicinity thereof are in contact with the heat transfer of the rising 5 and the rising air flow of the wire from the through hole 6, so it will be applied more than the other portions. A large amount of heat causes a local temperature rise, but the temperature 5 degree adjusting member 7 provided around each through hole G can reduce the heat added by the radiation to prevent the local temperature rise. In addition, during the aforementioned heat treatment, the proximity pin 11 for supporting the substrate 10 while being in contact with the substrate 10 is used to continuously apply additional heat to the substrate 10 by the heat transfer generated by the contact, but it can be called in the proximity lock. A temperature regulating member 13 is provided around the structure to reduce the heat applied by radiation to prevent the local temperature of the contact portion from rising. Therefore, during the aforementioned heat treatment, the temperature distribution of the substrate 10 can be brought into a substantially uniform state, and the temperature change gradient can be made gentle even in a place where there is a slight temperature change. In addition, since each of the raised claws 16 supports the base plate 15 at a position where the printed pattern 10a is not formed on the substrate 10, during the aforementioned heat treatment, even if heat is generated due to contact, additional heat is applied to the substrate 10, The quality of the printed pattern 10a is still not affected. As mentioned above, the present invention makes the temperature distribution of the substrate 10 in a substantially uniform state during the aforementioned heat treatment, and even if a gradient of temperature change is generated, it is also possible to make the gradient gentle so as not to be caused by the heat treatment. Local temperature rise. Therefore, the film thickness of the printed pattern 10a can be made substantially uniform, and no thermal image is generated due to the aforementioned local temperature rise. After heating the substrate 10 for a predetermined time, the radiation of the hot plate 2 is stopped, and at the same time, the lifting pins 5 are raised by the lifting driving mechanism 9 to contact the bottom of the substrate 1033 200423203, and the lifting claws are further caused. 16 and each of the raising pins 5 are integrally raised to raise the substrate 10 to be spaced from the surface of the hot plate 2, and the support of the proximity pin 11 to the substrate 10 is released. After that, when the substrate 10 is raised to the aforementioned raised position, the raising of the raising pins 5 and the raising claws 16 by the raising and lowering driving mechanism 9 is stopped. In this state, the robot arm 17 is driven to support the substrate 10 and carried out of the heating device 101. Thereby, the heat treatment for drying the printed pattern 10a printed on the substrate 10 is completed. In addition, when the substrate 10 to be subjected to the aforementioned heat treatment is a small substrate, the substrate 10 may be supported only by 10 raised claws 16 for supporting the periphery of the substrate 10 without the printed pattern 10a, so it is not necessary to have each The raised pin 5 or the proximity pin 11 does not cause the problem of local temperature rise due to the heat transfer caused by the aforementioned contact. However, in general, the substrate 10 (for example, a substrate having a thickness of 0.7 mm) used as a liquid crystal panel, if the long side of the substrate 10 is less than 600 mm, is the same as the aforementioned small substrate, and can only be supported by raising 15 claws 16 each. However, once the long side of the substrate 10 has a length of 600 mm or more, in order to reliably support the substrate 10 while maintaining the substrate 10 in a substantially horizontal state, it is necessary to have each of the raised pins 5 and 5 as shown in the heating device 101. Proximity pin 11. In order to reliably support such a substrate 10, it is desirable to arrange support members such as substrate support pins at intervals of about 300 mm. 20 Also, since the contact time of each raised pin 5 with the substrate 10 is, for example, about 10 seconds, and the delicate time of each raised pin 5 before the film material solution 8 printed on the substrate 10 is almost dried (that is, The uneven temperature distribution is more likely to affect the time of film thickness change), and it is not in contact with the substrate 10, so the degree of heat reduction is slightly smaller than that of the proximity pin 11. In contrast, the proximity pin 11 is in contact with the substrate 10 for about 60 seconds 34 200423203 minutes until the aforementioned delicate time, so the degree of heat reduction can be said to be greater than that of the raised pin 5. (Embodiment 1) Next, an embodiment of the proximity pin 11 and the temperature adjustment member 13 used in the heating device 101 of the aforementioned embodiment will be described below using Embodiment 1. 5 In the first embodiment, the structure of the heating device 101 in the form shown in the schematic sectional view of the third figure used in the description of the foregoing embodiment is adopted. Specifically, as shown in Fig. 3, as the hot plate 2, a top plate portion 3 and a heat generating portion 4 made of aluminum having a thickness of 10 mm are used. Also, as a proximity pin η, a cusp having a diameter of 3 mm was formed from Ulutum (registered trademark: ULTEM: polyetherimide). In addition, 10 is a ring-shaped member made of Ulutum (registered trademark) with an outer diameter of 10 mm and a thickness of 10 mm as the temperature adjustment member 13, and the upper surface of the temperature adjustment member 13 is 1 mm higher than the upper surface of the hot plate 2. . In addition, as the substrate 10, a soda glass having a thickness of 0.7 mm was used. In addition, the film raw material solution 8, the coating material, is a liquid crystal alignment film ink containing 6% polyamic acid and αNΜρ is 15 main agents (Nissan Chemical Industries Ltd .; Nissan Chemical Industries Co., Ltd. Co., Ltd.) (Sangba SE_7492, 062M), coated on the substrate 10 about 丨 /. Then, the proximity pin 11 is used to keep the substrate 10 at a position of 25 mm above the hot plate 2 and heated by the radiant heat of the hot plate 2 which has been heated to 145 ° C, so that the 20-liquid alignment film is dried with ink. During this heat treatment, the surface temperature of the temperature adjustment member 13 was 110 ° C. In the liquid crystal alignment film obtained in this manner, almost no unevenness in drying was observed. Here, the relationship between the distance from the center of the proximity pin U and the surface temperature of the substrate 10 is shown in FIG. 23B as the measurement result of the surface temperature of the substrate 35 200423203 10 during the aforementioned heat treatment. In FIG. 23B, the horizontal axis indicates the distance (mm) from the center of the proximity pin u, and the vertical axis indicates the surface temperature of the substrate 10 (.. Further, FIG. 23A shows the surface two-dimensionally along the direction of the substrate 10 surface. / JZL degree and distance-specific temperature distribution diagram. In addition, the isotherm 5 distribution diagram in Figure 23A, assumes that the negative temperature distribution from the center of the near pin 11 shown in Figure 23B is the overall temperature distribution. And the display becomes 丨 the isotherm distribution of its unit 0. As shown in FIG. 23A and FIG. 23B, the contact between the substrate 10 and the proximity pin 丨 丨 (that is, the position at a distance of 0 mm in the figure) is almost nowhere else Temperature difference 10 (Comparative Example 1) Second, compared to Comparative Example 丨 of Example 1, except that the proximity pin is directly buried in the hot plate, the rest are the same as in Example 丨, but the obtained liquid crystal alignment film The uneven drying was clearly observed. As in the first embodiment, a graph showing the relationship between the distance from the center of the proximity pin and the surface temperature of the substrate 15 is shown in FIG. 24B as the substrate surface during heat treatment. Temperature measurement results; 24th Figure A shows an isotherm distribution diagram for presenting the temperature measurement results of Figure 24B in a plane. As shown in Figures 24A and 24B, in Comparative Example 1, the temperature at the place where the substrate is in contact with the proximity pin is higher than elsewhere. The temperature is about 8 ° C, and it can be clearly confirmed that there is a local temperature increase. 20 (Example 2) Next, the implementation of the raising pin 5 and the temperature adjusting member 7 used in the heating device 101 of the foregoing embodiment will be described using Example 2. For example, the second embodiment is a combination of various devices used in the foregoing embodiment to form a temperature adjustment member 7 as shown in the schematic sectional view of FIG. 22. With 36 200423203, as shown in FIG. 22, the use of A 10mm thick top plate part recognizes each hot mouth M as the hot plate 2. In addition, non-scale steel is used as the main material, and Wu_Simu (and recording company; f *) is the tip of the front end material. The object serves as a raising pin 5. The top plate portion 3 of the joint plate 2 forms a through hole 6 with a diameter of 15 faces, and the temperature adjustment member 5 is inserted. ③ The degree adjustment member 7 is an outer diameter of 15 mm formed by a lower part. 'A ring with an inner diameter of 5mm and a thickness of 5 faces is used as the upper part of the lower temperature adjustment member 7a. A rotmeme (registered trademark) consisting of 15 outer diameters, 7 inner diameters, and a ring with a thickness of <5 mm is used as the upper temperature adjustment member. This is configured as a laminated structure, and the upper temperature adjustment member is 10 bits above It is 0.5mm lower than the top of hot plate 2. In addition, soda glass with a thickness of 0.7mm is used as the substrate 10. In addition, the film raw material solution 8, that is, the coating material, is made of 6% polyvinylamine and the Ink for liquid crystal alignment film based on p (Nissan Chemical Industry Co., Ltd .; Samba 15 SE-7492 '062M) manufactured by Nissan Chemical Industry Co., Ltd., and coated on the substrate 10 with about 2ml / m2 . Then, at a height position of 50 mm above the hot plate 2, the lift lock 5 is brought into contact with the base plate 10) for a second, and after the lift brocade 5 is lowered, the substrate is held at a height of 2.5 mm above the hot plate 2. Position, and dried by the radiant heat of the hot plate 2 which has been heated, the liquid crystal alignment film is dried. At this heat treatment, the surface temperature of the 'temperature regulating member 7 was 1 at 20 ° C. In the liquid crystal alignment film obtained in this manner, no unevenness in drying was observed for a few dollars. Here, the relationship between the distance from the center of the elevating pin 5 and the surface temperature of the substrate 10 is shown in FIG. 25B as the measurement result of the surface temperature of the substrate 10 during the aforementioned heat treatment. In FIG. 25B, the horizontal axis represents the distance (mm) from the center of the riser pin 5, and the vertical axis represents the surface temperature (° C) of the substrate 10. Furthermore, Fig. 25A is an isotherm distribution diagram showing the relationship between the surface temperature and the distance two-dimensionally along the direction of the substrate 10 surface. As shown in FIG. 25A and FIG. 25B, there is almost no temperature difference between the place where the substrate 10 is in contact with the raised pin 5 (that is, the position shown by a distance of 0 mm) and other places. (Comparative Example 2) Next, compared to Comparative Example 2 of Example 2, except that a hot plate having a through hole with a diameter of 5 mm was used, the rest were the same as those of Example 2 above, but the obtained liquid crystal alignment film was clear. Uneven drying was observed. In addition, 10 is the same as that of the previous embodiment 2. In FIG. 26B, a graph showing the relationship between the distance from the center of the rising pin and the substrate surface temperature is shown as the measurement result of the substrate surface temperature during the heat treatment; Figure 26A shows an isotherm profile used to present the temperature measurement results of Figure 26B in a plan view. As shown in Figs. 26A and 26B, "Comparative Example 2", the temperature at which the substrate is in contact with the riser pin is about 1 ° C higher than at other places, and it can be clearly confirmed that there is a local temperature rise. According to the aforementioned embodiment, the following various effects can be obtained. First of all, when it is necessary to use the additive processing for drying the film raw material solution 8 to form a thin film on the substrate 10 that has been printed or coated with the film raw material solution 8, even if the contact pin u is used to support or lend the substrate 10 High sales support for the substrate 1020, but there is still no local temperature change, and the temperature distribution of the substrate 10 can be uniform. As a result, the film material solution ⑽ on the supply substrate 10 can be dried in a substantially uniform state without causing a local drying speed difference, and the thickness of the film formed by the drying can be made uniform. Specifically, in the conventional heating method, the heat transfer generated due to the contact of the proximity lock 5U or the raised pin 505 38 200423203 and the substrate 510 will be applied in addition to the heat radiated from the hot plate 502. Due to the heat, the temperature around the aforementioned pins of the substrate rises. In the aforementioned embodiment of the present invention, the temperature adjusting members 13 and 7 are provided around each of the pins U and 5 to reduce the amount of light shot 5 from the part. The lower part is small to prevent the aforementioned temperature from rising. In addition, the material, shape, arrangement, etc. of these temperature adjusting members 13, 7 can be selected to finely adjust the aforementioned radiated heat to find the optimal conditions. Even if you do not use such a temperature-adjusting member as an independent member, you can still obtain the radiant heat by increasing the temperature of the surface of the hot plate 2 and the substrate around the pins U and 5 from the other parts. The effect will be attenuated as the distance gets longer, preventing the substrate 10 from rising in temperature at a portion in contact with each of the pins 11, M, and 15. In addition, for the updraft generated in the through-hole 6 provided with the lifting pin 5 that can be raised and lowered, the opening portion of the through-hole 6 on the surface of the hot plate 2 can be enlarged to diffuse 15 updraft near the opening to reduce the The temperature distribution of the substrate 10 is affected by the contact with the updraft. It is also very effective to provide a shielding plate 9 around the raising pin 5 in the through-hole 6 so as to disperse the updraft. In addition, the temperature distribution 20 required for the substrate 10 processed by this heating device 101 is uniform (or temperature uneven), generally within the soil age. However, such conditions are also applicable to a gentle temperature gradient (about When the temperature is below rc / 10cm, even if it is within the range of the above conditions, a local sharp part will still be a problem. For example, the part in contact with the raised pin during heat treatment is known. , Resulting in a local steep temperature such as lt / 0.4cm 39 200423203 gradient. Also, the part in contact with the proximity pin can be inferred that a local steep temperature gradient of about 2 to 5 times this is generated. However, according to the foregoing The heat treatment of the embodiment 'uses a temperature adjustment member, etc., can make the local temperature gradient gentle', for example, about 1 ° C / 3cm. 5 Also, generally, if it is a substrate for an alignment film for a liquid crystal, a polyimide film is formed. Most of the film thickness is set to 500 ~ 1200A. In this case, the required film thickness range is usually in the range of about ± 5 to 7%, but in addition to this, a visually formed polyimide film must be added. Unrecognizable Uneven conditions. Here, the so-called "visual" refers to the color difference caused by the interference color caused by the small film thickness difference of 10, but not the original color of the polyimide film. In particular, it can be confirmed that it is wet during the drying process of heat treatment. Generally, this "visual" condition is very strict, and the large bending unevenness of the entire substrate is hardly noticeable if the film thickness range is within ± 5%. However, the unevenness of the localized thermal image is very obvious in the part in contact with the pin. 15 For example, 'The film thickness measuring machine used to measure the film thickness of a thin film formed on a substrate cannot sufficiently detect the unevenness of the film thickness. Therefore, it is presumed that a film thickness gradient of about 1 GA / em is generated relative to 丨. [/ ㈤ 之 之 / 度 度 gradient 'can realize a gradient that suppresses the gradient to this extent. In addition, the foregoing various embodiments can be appropriately combined Any of the implementation forms 20 states, in order to exert their respective effects. This volume fully contains the best practice explained with reference to the additional illustrations. 8. For those who have ordinary knowledge in the technical field, easily Various deformations or corrections. Such deformations or corrections are included in the present invention as long as they do not depart from the scope of the present invention for which a patent is applied. 40 200423203 I: Brief description of the drawings 3 The first diagram is a heating showing one of the embodiments of the present invention A schematic perspective view of the structure of the device. Fig. 2 is a partial schematic cross-sectional view of the aforementioned heating device, which shows a state in which a temperature regulating member having an upper surface positioned at approximately the same height as the upper surface of the hot plate is arranged around the 5 pins. It is a partial schematic cross-sectional view of the aforementioned heating device, which is shown in a state where a temperature adjustment member is arranged around the proximity pin at a height position above the upper surface of the hot plate. 10 FIG. 4 is a partial schematic cross-section of the aforementioned heating device. The figure shows a state in which a temperature adjustment member is arranged around the proximity pin at a height position above and above the hot plate. Fig. 5 is a partial schematic cross-sectional view of the heating device, and shows a state in which a recessed portion is arranged around the proximity pin. 15 FIG. 6 is a schematic plan view of the temperature regulating member of FIG. 2. Fig. 7 is a modification example of the shape of the temperature adjusting member in Fig. 6 and shows a polygonal shape having sawtooth. Fig. 8 is a modification example of the shape of the temperature adjustment member of Fig. 6 and shows a shape having a regular octagonal shape. 20 FIG. 9 is a modification example of the shape of the temperature adjusting member in FIG. 6, and it shows a structure composed of a plurality of partial ring members. Fig. 10 is a modification example of the shape of the temperature-adjusting member shown in Fig. 6 and shows a structure composed of a plurality of circular members. Fig. 11 is a modification example of the shape of the temperature adjustment member in Fig. 6. The figure 41 200423203 is composed of a fine particle member. The second modification example of the shape is shown in Fig. 5 and Fig. 6 is the modification example of the shape of the temperature adjustment member in Fig. 6. It shows a configuration in which the linear members are arranged radially. Xi Di! Fig. 4 is a modification example of the shape of the temperature adjusting member shown in Fig. 6, which shows a member composed of arbitrary shape members. Fig. 15 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state where a temperature adjustment member having an upper surface substantially at the same height and position as the upper surface of the hot plate is arranged around the through hole of the 10 = pin. Fig. 16 is a partial schematic cross-sectional view of the aforementioned heating device, and shows a state in which a temperature adjustment member having an upper surface thereof positioned at a return position higher than the upper surface of the hot plate is arranged around the through hole of the liter = pin. 15 FIG. 17 is a partial schematic cross-sectional view of the aforementioned heating device. The penetrating barrier of the display pin is in a state in which the temperature adjustment member is arranged on the upper side of the heating plate at a lower position than the upper side of the hot plate. Fig. 18 is a partial schematic cross-sectional view of the heating device, and shows a state where a recessed portion is formed around the through hole of the raising pin. Fig. 20-Fig. 19 is a partial schematic cross-sectional view of the aforementioned heating device, showing a state where the opening portion of the high-pin through hole is enlarged. Fig. 20 is a partial schematic cross-sectional view of the aforementioned heating arrangement, which shows a state where a shield plate is provided around the south south pin. μ Figure 21 is a schematic plan view of the 15th section of the Wenlang section. FIG. 22 is a schematic cross-sectional view showing the surrounding structure of the raised pin of the heating device according to the present invention. Figures 23A and 23B are diagrams showing the temperature distribution of the substrate when the proximity pin is used in the embodiment. Figure 23B is a graph showing the relationship between the distance from the center of the proximity pin and the surface temperature of the substrate. The 23B chart draws the isotherm distribution map of the 2-dimensional temperature change of the substrate surface. Figures 2 4 A and 2 4 B are diagrams showing a comparison example of the substrate temperature distribution when a proximity pin is used. Figure 24B is a graph showing the relationship between the distance from the center of the proximity pin and the substrate surface temperature. Figure 24A It is an isotherm distribution diagram showing the two-dimensional temperature change of the substrate surface drawn according to the 24B chart. 10 FIG. 25A and FIG. 25B are graphs showing the temperature distribution of the substrate when a raised pin is used in Example 2. FIG. 25B is a graph showing the relationship between the distance from the center of the raised pin and the surface temperature of the substrate. Shows the isotherm profile of the two-dimensional temperature change of the substrate surface according to the 25B chart. 26A and 26B are graphs showing the temperature distribution of the base plate 15 in the case of using a raised pin in Comparative Example 2. FIG. 26B is a graph showing the relationship between the distance from the center of the raised pin and the surface temperature of the substrate. FIG. 26A It is an isotherm distribution diagram showing the two-dimensional temperature change of the substrate surface drawn according to the 26B chart. Fig. 27 is a schematic top view showing the structure of a conventional heating device. [Representative symbols for main components of the drawing] 2,502 ... Hot plate 3 ... Top plate portion 4 ... Heating portion 5,505 ... Raising pin 6,506 ... Through hole 6a ... Section portion 7, 13, 13 , 13: 6, 13 (:, 130, 13 min, 13 卩, 130, 1311 .. Temperature adjustment member 7a ... Lower temperature adjustment member 43 200423203 7b ... Upper temperature adjustment member 8 .... Film raw material solution 9. · · Elevating and lowering driving mechanism; shielding plate 10,510 ··· substrate 10a ... printed pattern 11,511 ... proximity pin 14C ... partial ring member 14D ... · round member 14E ... particle member 14F, 14G .. .Linear member 14H ... arbitrarily shaped member

15.. .爪支持構件 16.. .升高爪 17.. .機器臂 23,27···凹部 101，501…加熱裝置15. .. claw supporting member 16. .. raising claw 17.... Robot arm 23, 27... Recessed part 101, 501... Heating device

4444

Claims (1)

200423203 拾、申請專利範圍： 1 · 一種加熱裝置，包含有用以藉施加輻射熱來加熱被 加熱基板的熱板；及，設於該熱板，且在該被加熱 基板加熱之期間用以保持該被加熱基板與該熱板有 間隔的基板支持銷，其特徵在於·· 5亥熱板之別述基板支持銷的周圍，設有用以減 低由前述周圍輻射至該被加熱基板之熱量的減熱 部， 又，藉前述減熱部減低由前述周圍施加至該被 加熱基板之輻射熱量，以抑制由於前述基板支持銷 之接觸傳熱而產生之從該熱板對該被加熱基板施加 熱量造成之該被加熱基板溫度上升。 2·如申請專利範圍第丨項之加熱裝置，其中前述基板 支持銷係固定於前述熱板，且在該被加熱基板加熱 之期間用以保持該被加熱基板與該熱板有間隔的近 接銷。 3·如申請專利範圍第1項之加熱裝置，其中前述基板 支持銷係配置成可沿形成在前述熱板之貫通孔上下 移動，且在該被加熱基板加熱之期間用以抬起並保 持該被加熱基板與該熱板有間隔的升高銷。 4·如申請專利範圍第1至3項中任一項之加熱裝置， 其中前述減熱部係由與前述熱板不同之另一構件形 成的減熱構件，且至少利用前述熱板與前述減熱構 件之接觸面的接觸電阻來減低前述輻射熱量。 45 •如申請專利範圍第4項之加熱裝置，其中前述減熱 部係由配置在前述基板支持銷周圍之多數前述減熱 構件所構成者。 如申明專利範圍第4項之加熱裝置，其中前述減熱 5 構件具有由多數構件積層之積層構造，且利用各層 間之接觸面之接觸電阻來減低前述輻射熱量。 7·如申明專利範圍第4項之加熱裝置，其中前述減熱 構件配置於前述熱板上，使前述被加熱基板與前述 減熱構件之間的間隔尺寸較前述被加熱基板與前述 10 熱板之間之前述間隔尺寸還大。 8.如申μ專利圍第i至3項中任—項之加熱装置， 其中前述減熱部係形成在前述基板支持銷之周圍的 :部’且藉由形成前述凹部，使前述被加熱基板與 則述凹部之内底表面之間的間隔尺寸較前述被加熱 15 基板與前述熱板之間之前述間隔尺寸還大，藉此來 減低前述輻射熱量。 9·如I請專利範圍第8項之加熱裝置，其中前述凹部 於剛述内底表面具有朝前述基板支持銷巾心之深度 梯度。 又 20200423203 Patent application scope: 1 · A heating device including a hot plate for heating a heated substrate by applying radiant heat; and provided on the hot plate and used to hold the heated substrate while the heated substrate is heated The substrate supporting pin having a space between the heating substrate and the hot plate is characterized in that: around the substrate supporting pin of the 5H heat plate, a heat reducing portion is provided to reduce the heat radiated from the surrounding to the heated substrate. In addition, by the aforementioned heat-reducing portion, the radiant heat applied to the heated substrate from the surrounding area is reduced to suppress the heat caused by the heat transfer from the hot plate to the heated substrate caused by the contact heat transfer of the substrate support pins. The temperature of the heated substrate rises. 2. The heating device according to item 丨 of the patent application range, wherein the substrate supporting pin is fixed to the hot plate and is used to maintain the proximity pin spaced between the heated substrate and the hot plate during the heating of the heated substrate. . 3. The heating device according to item 1 of the patent application range, wherein the substrate supporting pin is configured to be movable up and down along a through hole formed in the hot plate, and is used to lift and hold the heated substrate while the heated substrate is being heated. The heated substrate has a raised pin spaced from the hot plate. 4. The heating device according to any one of claims 1 to 3, wherein the heat-reducing portion is a heat-reducing member formed of another member different from the hot-plate, and at least the hot-plate and the heat-reducing member are used. The contact resistance of the contact surface of the thermal member reduces the aforementioned radiant heat. 45 • The heating device according to item 4 of the scope of the patent application, wherein the aforementioned heat-reducing portion is composed of a plurality of the aforementioned heat-reducing members arranged around the aforementioned substrate support pin. For example, the heating device according to item 4 of the patent scope, in which the aforementioned heat-reducing member 5 has a laminated structure composed of a plurality of members laminated, and the contact resistance between the contact surfaces between the layers is used to reduce the aforementioned radiant heat. 7. The heating device as claimed in item 4 of the patent scope, wherein the heat-reducing member is arranged on the hot plate, so that the space between the heated substrate and the heat-reducing member is larger than the heated substrate and the 10 hot plate. The aforementioned interval size between them is still large. 8. The heating device of any one of items i to 3 in the application of the μ patent, wherein the aforementioned heat-reducing portion is formed around the substrate supporting pin: the portion, and the aforementioned heated substrate is formed by forming the aforementioned recessed portion. The interval between the bottom surface of the recessed portion and the substrate 15 is larger than the interval between the heated substrate and the hot plate, thereby reducing the radiant heat. 9. The heating device according to item 8 of the patent claim, wherein the recessed portion has a depth gradient on the inner bottom surface just before the substrate supporting pin center. Another 20 10·如申請專利範圍第！項之加熱裝置，其中前述減: p Wj述熱板之表面，具有其中心配置成與前: 二板支持銷之中心大致_致之大略圓形或大略多 形的外周端部。 ； 申請__第3項之加熱裝置’其中前述貫i 46 200423203 孔，其孔徑在前述熱板之上面附近較在前述熱板之 内部擴大。 12. 如申請專利範圍第3項之加熱裝置，其中前述升高 銷之周圍具有遮蔽板，該遮蔽板係配置成可遮擔從 5 前述貫通孔朝前述被加熱基板產生之上升氣流者。10 · If the scope of patent application is the first! The heating device according to the above item, wherein the surface of the aforementioned minus: p Wj hot plate has a center end configured to be approximately the same as the center of the front: two plate support pin, which has a substantially circular or polymorphic outer peripheral end. Application __ The heating device of item 3, wherein the above-mentioned through-i 46 200423203 hole has an enlarged hole near the upper surface of the hot plate than inside the hot plate. 12. The heating device according to item 3 of the patent application, wherein the raising pin is provided with a shielding plate around the raising pin, and the shielding plate is configured to cover the ascending air generated from the aforementioned through hole to the heated substrate. 13. 如申請專利範圍第1至3項中任一項之加熱裝置， 其中前述加熱裝置係用以加熱前述被加熱基板，使 供給到前述被加熱基板之表面的膜原料溶液乾燥， 俾於前述表面形成薄膜的薄膜形成用加熱裝置。 1013. The heating device according to any one of the claims 1 to 3, wherein the heating device is used to heat the heated substrate, to dry the film raw material solution supplied to the surface of the heated substrate, and to hold the above A heating device for forming a thin film on the surface. 10 4747
TW093101979A 2003-01-30 2004-01-29 Heating apparatus TW200423203A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003021693 2003-01-30
JP2003021694 2003-01-30
JP2003021695 2003-01-30

Publications (1)

Publication Number Publication Date
TW200423203A true TW200423203A (en) 2004-11-01

Family

ID=32830628

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093101979A TW200423203A (en) 2003-01-30 2004-01-29 Heating apparatus

Country Status (3)

Country Link
KR (1) KR20050101169A (en)
TW (1) TW200423203A (en)
WO (1) WO2004068227A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120030646A (en) * 2010-09-20 2012-03-29 이병칠 Oven chamber for lcd glass plate having a proximity adhesive
CN107942552A (en) * 2017-12-29 2018-04-20 张家港康得新光电材料有限公司 Alignment film drying unit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4148387B2 (en) * 2001-07-05 2008-09-10 東京エレクトロン株式会社 Heat treatment equipment

Also Published As

Publication number Publication date
KR20050101169A (en) 2005-10-20
WO2004068227A1 (en) 2004-08-12

Similar Documents

Publication Publication Date Title
KR100330088B1 (en) Substrate Processing Equipment
CN103529599B (en) The orientation equipment of a kind of air-flotation type crystal liquid substrate and method
KR100892554B1 (en) Supporting pin
CN106716607A (en) Susceptor and pre-heat ring for thermal processing of substrates
EP2840601B1 (en) Substrate support pin and substrate support device adopting substrate support pin
JP4601301B2 (en) Heating device
JP2006116454A (en) Slit coat type coater and slit coat type application method
TW200423203A (en) Heating apparatus
JP2003218003A (en) Substrate heating device
KR20160075344A (en) Substrate processing apparatus and substrate processing method
KR101209297B1 (en) Substrate heating apparatus and substrate heating method
TW565924B (en) Substrate heat treatment apparatus and manufacturing method of flat device
CN108944075B (en) Stamp pad, printing device and Method of printing for inkjet printing
JP2002313700A (en) Heating device and cooling device
KR20180014414A (en) Susceptor
JP2005264226A (en) Plasma treatment device
JP2006100743A (en) Temperature rising unit and temperature raising/dropping unit
JP5603055B2 (en) Hot plate and hot plate unit using the same
JP2017112304A (en) Substrate temperature controller
JP2008007375A (en) Method for manufacturing glass article
US10118318B2 (en) Temperature regulation mask and alignment layer pre-curing device
JP2006093495A (en) Substrate heating device and method therefor
TWI312855B (en) Multi stage type heating apparatus for large size substrates
KR20060100635A (en) Substrate drying apparatus using microwave
US11854842B2 (en) Substrate heat treatment apparatus