200421408 五、發明說明（l) 【發明所屬之·技術領域】 本發明係關於-種場發射顯 於奈米碳管之場發射顯示裝置。 置，尤其涉及一種基 【先前技術】 奈米碳管係於1 9 9 1年由丨i · i /泰 次發現之中空碳管，苴菸矣 ^兔弧放電的產物中首 56。奈米碳管以其優良之導電性能，f版之Nature 354， 米尺度之尖端等特性而成為極且晶格結構，奈 於場發射平面顯示器件、電直允哭^之％务射陰極材料， 應用領域有著廣闊之前景。…二态、大|功率微波器件等 通過化學氣相沈積法可易於石夕片璃 長出位置、取向、高度均確定之太 —螭寻基板表面生 尺寸可通過半導體光刻工蓺：二：陣列’而點陣之 乂精度义使得奈米碳管陣列於平面孽 /回之衣 迅速之應用。 ^不為件中可能得到 美國專利第6，33 9，2 8 1號揭露一種三 管場發射I員示器之製備方法。該方-括？：構奈米碳 ⑴於：基底形成陰極，再於陰極表: · (2)於絶緣層表面形成柵 、’巴、.彖層； 口； 丹於柵極層表面形成開. (3 )利用輙極層作為掩模，通過刻 孔； 、、、巴緣層中形成一微 (4 )形成〜層催化劑於基底，利用化趨^ 表面生長奈米碳管陣列。 予1相沈積法於基底 200421408 五、發明說明（2) 惟，實 場發射之奈 之難題： 首先， 碳管陣列之 而利用化學 積均勻。 其次， 時為達到線 降低栅級之 距應盡可能 奈米碳管陣 求，難以精 再次， 避免含有一 並夾雜少量 發射性能之 有鑒於在丨 電子之奈米 可避免催化 碳管之場發 【内容】 本發明 距於大面積 際製備過程中，利用化學氣 米碳管陣列 ，尤積法制備用於 干夕彳有如下缺點及本領域一 只3 直難以克服 為達到顯示均勻性，栅極與 間距兩屈：〜 、用於％發射之夺半 门距而要於大面積上保持微 不未 氣相沈積生具丁蓺雞^似、、，及之句勻性， 、生長工云難以做到奈米碳管高度大面 =衣作便攜式平面顯示器，必須降低能耗，同 巳上易於實現尋址及控制顯示灰度，要求盡量 起始發射電壓，故，柵極與奈米碳管陣列之間 減小。化學氣相沈積方法雖然能夠大體上控制 歹J之生長高度，惟，其精度目前尚未能滿足要 確控制上述間距於一理想之範圍。 化學氣相沈積法生長之奈米碳管陣列表面不4 薄層雜亂分佈之奈米碳管，且其尺度不均句磁 剩餘之催化劑顆粒或無定性碳等雜質，造成^ 不穩定及不均勻，並可能降低器·件之壽命。射 b ’提供一種具有較低之栅極啟動電壓，欲/命 碳管具有大面積高度一致均勻性，且發射2米 制顆叙或無定性碳等雜質，或雜亂分佈二# 射顯示裝置實為必要。 之目的在於提供一種栅極與奈米碳管陣列 上保持微米量級均勻性之場發射顯示器° 五、發明說明（3) 本發明之另— 米碳管尺度均J的提供-種奈米碳管陣列發射端之大 碳等雜質之場發射；；；列、不含有催化劑顆教或無定： 本發明之又一 口口 之間距可盡可铲:目的在於提供一種柵極與奈米碳管陳Μ 器。 了…，例如達到微米量級之場發列 本發明提佴少 於陰極舆陽極間—種場發射顯示器包括陰極、陽極、位 及栅極與陰極間u思用作場發射單元之奈米碳管陣列 砝電性相連，該太=f層，該奈米碳管陣列之一端面與陰 極之端面基心：：：列之：-端面與絕緣層靠近二 一絕緣介質膜。、σ平，於絕緣層與柵極之間還包括 層之金屬、^巴ί介質膜之製備材料可為玻璃、塗敷絕緣 1000微米，優误=化矽、陶瓷或雲母，其厚度為1微米〜 可為玻續、塗數絕=3°尸°微：。該絕緣層之製備材料 母，其厚度為屬、石夕、氧化石夕、陶竞或雲 場發射顯示裝詈、1 〇笔米，優選為1 0微米〜5 0 0微米。該 保護層。該保罐2絕緣介質膜與絕緣層之間進一步包括一 本發明之；‘之f度為10奈米〜1 00 0奈米。 與奈米碳管之間庇射顯不器之絕緣介質膜可用來控制栅極 較低之拇極壓了 為控制進而獲得 催化劑之-端，故；：：奈米碳管靠近 人用於毛射兒子之奈米碳管陣列可實現大 五、發明說明（4) 面積南度一致 一致性。且發 質，也不會含 定、更均勻， 【實施方式】 請先蒼閱 意圖。該場發 1 7與陽極2 0間 1 5及柵極1 9與 端面與陰極1 7 絕緣層1 4靠近 1 4與桃極1 9之 均勻性，進％ + 射端面不；：：貫現各像素的場 有雜亂八：'有催化劑顆粒或無 從，刀布之奈米碳管，使場發 ^ %發射顯示器之壽命。 發射效果之 定性碳等雜 射性能更穩 第 θ =圖，本發明之場發射顯示 之^不器包括：陰極17，陽極2〇 冊極1 9，用作場發射單元之奈 :極^間之絕緣層14，該奈米碳 笔性相連，該秦米碳管陣列1 5之 柵極19之端面基本位於同一平面 間退包括'一絕緣介質膜1 1。 器之結構示 ，位於陰極 米碳管陣列 管陣列1 5 一 另一端面與· ，於絕緣層 下面通過第一圖至第十二圖介紹本發明之場發射顯示 器之製造方法。 請參閱第一圖，首先，提供一工作板1 〇，該工作板1 〇 之表面可以帶有細微凹槽1 〇 1，以便成品脫附容易。先用 石蠟102等易於去除之物質塗平’其平整度要求在1微米以 下。工作板1.0應當可耐受奈米碳管生長時的高溫，並可反 復使用。 請參閱第二圖，再於工作板1 0表面沈積一絕緣介質膜 11。沈積方法可用鍍膜、印刷或直接採用現成之薄板。此 絕緣介質膜11在結構中用於控制陰極1 7與柵極1 9間之間 距，及後續工藝中的印刷、生長用的基板。絕緣介質膜11 之厚度範圍為1微米〜1000微米’優選厚度範圍約為微米 200421408 五、發明說明（5) 〜2 0 0被米’平整度要求在1微米以下。此絕緣介質膜1 1應 當可光刻加工，並且能夠耐受70 0。C左右的奈米碳管生長 溫度’其材料可選擇高溫玻璃、塗敷絕緣層的金屬、石夕、 氧化矽或陶瓷、雲母等。 請參閱第三圖，再於絕緣介質膜丨i表面沈積一層保護 層1 2。沈積時用光刻法製作出顯示點陣。此保護層丨2之目 的在於保護奈米碳管於後續工藝中可能採用之濕法刻蝕步 驟中不被破壞。保護層1 2可採用矽或其他材料要求可耐 叉 >熙法刻姓，且可用不損傷奈来碳管之幹法刻钱工藝去 除。沈積方法可採用電子束蒸發或磁控濺射，其厚度|滿 足保護，求的情況下可以儘量薄，厚度範圍為。 明麥閱第四圖，再於保護層丨2表面沈積催化劑層丨3。催化 劑層1 3材料可為鐵、鈷、鎳等過渡元素金屬或其合金。催 化劑層ij之沈積厚度為b10nm，優選5nm。沈積方式採用 電子束蒸發、熱蒸發或者濺射法。 ^請參閱第五圖，再於保護層12表面形成一絕緣層14。 。亥、’、巴緣層1 4 ·之目的係使陰極電極丨7與栅極電極丨9絕緣，同 日寸形成空隙1 4 1以提供奈米碳管陣列1 5之生長空間。製作 可採用鍍膜、印刷或直接採用現成的薄板。此絕緣層14厚 度範圍1微米〜1 0毫米，根據奈米碳管陣列丨5生長長度而 疋，、優選厚度範圍1 0微米〜5 〇 0微米。若採用現成之薄板則 要求單面平整度1微米以下（面向催化劑一面）。製作時 應做出顯示點陣。此絕緣層丨4之製成材料應當能夠耐受 7 0 0 c左右之奈米妷官生長溫度，其材料可選擇高溫玻200421408 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a field emission display device in which field emission is displayed on a carbon nanotube. In particular, it involves a kind of basic technology. [Previous technology] Nano carbon tubes were discovered in 1991 by i · i / Tai times, hollow carbon tubes, the first 56 of the product of the rabbit arc discharge. Nanometer carbon tubes have a polar and lattice structure due to their excellent electrical conductivity, Nature f 354, and meter-scale tips. They are used in field emission flat display devices and cathodes. The application field has broad prospects. … Two-state, large | power microwave devices, etc. can easily determine the position, orientation, and height of Shi Xi's glass by chemical vapor deposition—finding the substrate surface size can be achieved by semiconductor lithography. Two: Array 'and the precision of the dot matrix make nano-carbon tube arrays quickly used in the flat / return garment. ^ It is possible to obtain U.S. Patent No. 6,33 9,2 8 1 in this article, which discloses a method for preparing a three-tube field emission display device. Which side-enclosed? ： Constructing nanometer carbon: on the substrate to form the cathode, and then on the surface of the cathode: · (2) forming a gate, 'bar,. 彖 layer on the surface of the insulating layer; The electrode layer is used as a mask, and a micro (4) layer of a catalyst is formed on the substrate through the engraved holes; the carbon nanotube array is grown on the surface of the substrate. I. 1-phase deposition method on the substrate 200421408 V. Description of the invention (2) However, the difficulty of real-field emission is as follows: First, the carbon tube array is used to make the chemical product uniform. Secondly, in order to reduce the grid distance, the carbon nanotube array should be as much as possible, and it is difficult to refine it again. Avoiding the inclusion of a small amount of emission performance in combination with nanometer electrons can avoid the field emission of catalytic carbon tubes. [Content] The present invention is used in the preparation process of large-area interstitials, and uses chemical gas meter carbon tube arrays, especially the product method to prepare for the use of dry eve. It has the following disadvantages and it is difficult to overcome in the art. Bifurcation with the distance: ~, half of the door distance used for% launch and to maintain a small amount of vapour deposition on a large area, and the uniformity of the Ding chicken is similar to, and it is difficult to grow. To achieve a large height of the nano-carbon tube = to make a portable flat-panel display, it is necessary to reduce energy consumption, and it is easy to achieve addressing and control of the display gray scale. It is required to start the emission voltage as much as possible. Decreases between arrays. Although the chemical vapor deposition method can generally control the growth height of 歹 J, its accuracy has not yet been satisfied to control the above-mentioned pitch to an ideal range. The surface of the nano carbon tube array grown by chemical vapor deposition method is not a thin layer of nano carbon tubes that are randomly distributed, and the unevenness of the magnetic particles, such as catalyst particles or amorphous carbon, causes ^ instability and unevenness. , And may reduce the life of the device. It provides a low starting voltage of the grid, and the carbon tube has a large area and high uniformity, and emits 2 meters of particles or amorphous carbon and other impurities, or messy distribution ## The display device is necessary. The purpose is to provide a field emission display that maintains micron-level uniformity on the grid and the nano-carbon tube array. V. Description of the invention (3) Another aspect of the present invention-provision of J-meter carbon tube dimensions-a kind of nano-carbon Field emission of impurities such as large carbon at the emission end of the tube array;; column, no catalyst particles or non-deterministic: the distance between the other mouths of the present invention can be as much as possible: the purpose is to provide a grid and a carbon nanotube Chen M device. For example, the field emission to the order of micrometers is improved. The present invention provides less than the cathode and anode. A field emission display includes a cathode, an anode, a bit, and a grid and a cathode. Nanocarbons are used as field emission units. The tube array weights are electrically connected. The too = f layer. One of the end faces of the nano carbon tube array and the end face of the cathode are at the center of the core ::: column:-the end face and the insulating layer are close to the two-layer dielectric film. , Σ flat, the layer between the insulating layer and the gate also includes a layer of metal, and the dielectric film can be made of glass, coated with 1000 micrometers of insulation, and the error is equal to silicon, ceramic or mica, and its thickness is 1 Micron ~ can be glass continuous, coating number absolutely = 3 ° dead ° micro :. The thickness of the insulating layer mother material is 10 metre, preferably 10 micrometers to 500 micrometers. The protective layer. Between the insulating dielectric film and the insulating layer of the can 2 further includes an invention according to the present invention; the f-degree is 10 nm to 100 nm. The insulating dielectric film between the nanometer carbon tube and the reflective display can be used to control the lower thumb pressure of the grid to control the catalyst to obtain the -side of the catalyst. The son of the nano-carbon tube array can achieve the fifth, invention description (4) the area is consistent with the south. And the hair will not be vague and more even. [Embodiment] Please read the intention first. In this field, the uniformity between 17 and anode 15 and grid 19 and end face and cathode 17 insulation layer 1 4 is close to 14 and peach pole 19 is uniform, and the entrance end is not +: The field of each pixel is messy: 'With catalyst particles or nowhere, the carbon nanotube of the knife cloth makes the field emit ^% of the life of the display. The emission performance of qualitative carbon and other stray emission properties is more stable. Θ = Figure. Field emission display devices of the present invention include: cathode 17, anode 20, and pole 19, which are used as field emission units. The insulating layer 14 is connected to the nano carbon in a pen-shaped manner, and the end faces of the grid 19 of the Qin Mi carbon tube array 15 are substantially located on the same plane and are retracted to include an insulating dielectric film 11. The structure of the device is shown in the cathode carbon tube array tube array 15 and the other end surface and ·, and the insulating layer is used to introduce the manufacturing method of the field emission display device of the present invention through the first to twelfth figures. Please refer to the first figure. First, a work board 10 is provided. The surface of the work board 10 may be provided with fine grooves 101 to facilitate easy desorption of the finished product. First, it should be flattened with an easily removable substance such as paraffin 102, and its flatness is required to be 1 micron or less. The working plate 1.0 should be able to withstand the high temperatures of the carbon nanotubes as they grow and can be used repeatedly. Referring to the second figure, an insulating dielectric film 11 is deposited on the surface of the work board 10. The deposition method can be coated, printed or directly used off-the-shelf sheet. This insulating dielectric film 11 is used in the structure to control the distance between the cathode 17 and the grid 19, and the substrate for printing and growth in the subsequent processes. The thickness of the insulating dielectric film 11 ranges from 1 micrometer to 1000 micrometers', and the preferred thickness range is about micrometers. 200421408 V. Description of the invention (5) to 2 0 0 meters The flatness is required to be less than 1 micrometer. The insulating dielectric film 11 should be lithographically processable and capable of withstanding 70 °. The growth temperature of carbon nanotubes around C is selected from high-temperature glass, metal coated with insulation, stone, silicon oxide, ceramics, and mica. Refer to the third figure, and then deposit a protective layer 12 on the surface of the insulating dielectric film 丨 i. During the deposition, a display dot matrix is made by photolithography. The purpose of this protective layer 2 is to protect the carbon nanotubes from being damaged during the wet etching steps that may be used in subsequent processes. The protective layer 12 can be made of silicon or other materials, which can be resistant to forks, and can be removed by a dry money engraving process that does not damage the carbon nanotube. The deposition method can use electron beam evaporation or magnetron sputtering, and its thickness | is fully protected. It can be as thin as possible under the circumstances. Mingmai read the fourth picture, and then deposited a catalyst layer 3 on the surface of the protective layer 2. The material of the catalyst layer 13 may be a transition element metal such as iron, cobalt, nickel, or an alloy thereof. The deposition thickness of the catalyst layer ij is b10 nm, preferably 5 nm. The deposition method is electron beam evaporation, thermal evaporation or sputtering. ^ Please refer to the fifth figure, and then form an insulating layer 14 on the surface of the protective layer 12. . The purpose of this layer is to insulate the cathode electrode 丨 7 from the gate electrode 丨 9, and form a space 141 on the same day to provide a growth space for the carbon nanotube array 15. Production Can be coated, printed or directly from ready-made sheets. The thickness of the insulating layer 14 ranges from 1 micrometer to 10 millimeters, and depends on the growth length of the nano-carbon tube array, and preferably ranges from 10 micrometers to 500 micrometers. If ready-made sheet is used, the flatness of one side is required to be less than 1 micron (the side facing the catalyst). Display dot matrix should be made during production. The material of this insulating layer 丨 4 should be able to withstand the nano eunuch's growth temperature of about 7 0 c.
第9頁 200421408 五、發明說明（6) 〜 璃、塗敷絕緣層之金屬、矽、氧化矽或陶瓷、雲母等。 請蒼閱第六圖’再於絕緣層丨4之間隙丨4 1生長奈米碳 管陣列1 5 ’其高度與5之絕緣層丨4大致相同即可，高度之 不均t性不會影響場發射顯示效果。 請蒼閱第七圖’根據驅動電路之需要，可選擇沈積— 層電阻負反饋層1 6。其材料可選用合適電阻率之矽、合金 等材料，厚度根據需要之電阻大小決定，該電阻大小由電 路設計及使用時之柵極電壓決定，範圍可能在丨千歐姆至 100兆歐姆之間。沈積方法可採用電子束蒸發、熱蒸發或 濺射法，沈積的形狀與陰極電極相同，沈積需要用到鏤空 請 17 〇沈 沈積模 數能夠 請 用玻璃 接、融 請 11表面 或濺射 要求對 與陰極 請 芩閲第八圖 積方法與沈 板。陰極材 與電阻負反 參閱第九圖 、塑膠、陶 合等。 參閱第十圖 沈積柵極電 法，沈積可 準下方的奈 電極1 7相同 參閱第十一圖 ’於電阻負反饋層1 6表面沈積陰極電極 積笔阻負反饋層1 6相同，亦用到相同之 料17可選用任何金屬，只須其熱膨脹係 饋層16及底板18(見第九圖）匹配即可。、 對陰極進行封裝底板is。底板is可選 瓷等材料，製作方法可採用印刷、粘， =離工作板丨〇，翻轉後於 =沈積可採用電子束蒸發、； 用鎮空的模板’或者用光刻工蔽 。 柵極19的電極材料要求 用適當之工蓺，4 有 如u法刻钱除去絕 200421408 五、發明說明（7) 緣介質膜1 1於顯示像素位置之對應部分（未標示）。 請參閱第十二圖，採用適當之工藝，如幹法刻蝕去除 保護層1 2於顯示像素位置之對應部分（未標示）。如有必 要，可採用雷射轟擊去除催化劑層1 3。 請參閱第十三圖，再與熒光屏封裝，即成場發射顯示 器。其中熒光屏包括一陽極20，玻璃基板21及熒光層22。 綜上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟，以上所述者僅為本發明之較佳實施 例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援议本發明之精神所作之等效修飾或變化，皆 應涵蓋於以下申請專利範圍内。Page 9 200421408 V. Description of the invention (6) ~ glass, metal coated with insulating layer, silicon, silicon oxide or ceramic, mica, etc. Please read the sixth picture 'and then the gap between the insulation layer 4 and the 4 1 growth carbon nanotube array 1 5' its height is about the same as that of the insulation layer 5 4. The unevenness of the height will not affect Field emission display effect. Please refer to the seventh figure. According to the needs of the driving circuit, the deposition-layer resistance negative feedback layer 16 can be selected. The material can be selected from silicon, alloy and other materials with suitable resistivity. The thickness is determined by the required resistance. The resistance is determined by the circuit design and the gate voltage during use, and the range may be from 1000 ohms to 100 megaohms. The deposition method can use electron beam evaporation, thermal evaporation or sputtering. The shape of the deposition is the same as that of the cathode electrode. Hollowing is required for the deposition. Please deposit the deposition module. Please use glass for welding, melt the surface or sputtering requirements. Please read the eighth plot method and the sink plate with the cathode. Cathode material and resistance negative inverse Refer to the ninth figure, plastic, ceramic and so on. Refer to the tenth figure for depositing the gate electrode method. The deposition of the negative electrode 17 can be the same. Refer to the eleventh figure 'depositing the negative electrode feedback layer 16 on the surface of the negative feedback layer. The negative feedback layer 16 is the same. The same material 17 can be selected from any metal, as long as the thermal expansion system feeding layer 16 and the bottom plate 18 (see the ninth figure) are matched. ， Encapsulating the cathode to the substrate. The base plate is made of ceramics or other materials. The production method can be printed and glued, = away from the work plate, and after being turned over, deposition can be performed by electron beam evaporation; using a blanked template 'or masking by photolithography. The electrode material of the grid 19 requires proper workmanship. 4 There is a method of removing money by the method 200421408 V. Description of the invention (7) Corresponding part (not labeled) of the edge dielectric film 11 at the position of the display pixel. Please refer to the twelfth figure, using a suitable process, such as dry etching to remove the corresponding portion of the protective layer 12 at the position of the display pixel (not labeled). If necessary, laser bombardment can be used to remove the catalyst layer 1 3. Please refer to the thirteenth figure, and then package it with a fluorescent screen to form a field emission display. The fluorescent screen includes an anode 20, a glass substrate 21, and a fluorescent layer 22. In summary, the present invention has indeed met the requirements for an invention patent, and a patent application was filed in accordance with the law. However, the above is only a preferred embodiment of the present invention, and it cannot be used to limit the scope of patent application in this case. For example, those who are familiar with the skills of this case to the equivalent of the modification or change made by the spirit of the present invention should be covered by the following patent applications.
200421408 圖式簡單說明 第一圖係製造本發明場發射顯示器所用之具有複數凹 槽之工作模板之主視圖。 第二圖係第一圖所示之工作模板表面沈積絕緣介質層 之示意圖。 第三圖係第二圖所示之絕緣介質層表面沈積保護層之 示意圖。 第四圖係第三圖所示之保護層表面沈積催化劑層之示 意圖。 第五圖係第四圖所示之催化劑層表面形成絕緣層之示 意圖。 1 第六圖係第五圖所示之絕緣層之間隙生長奈米碳管陣 列之示意圖。 第七圖係第六圖所示之奈米碳管陣列之頂部沈積負反 饋層之示意圖。 第八圖係第七圖所示之負反饋層表面沈積陰極電極之 示意圖。 ’ 第九圖係第八圖所示之陰極電極封裝底板之示意圖。 第十圖係去除第九圖中之工作板後於絕緣介質層表面 沈積柵極之示意圖。 第十一圖係第十圖中之絕緣介質層進行刻蝕之示意 圖。 第十二圖係第十一圖中奈米碳管之保護層進行刻蝕之 示意圖。 第十三圖係封裝顯示屏後之場發射顯示器之結構示意200421408 Brief Description of Drawings The first drawing is a front view of a working template having a plurality of grooves for manufacturing a field emission display of the present invention. The second diagram is a schematic diagram of the insulating dielectric layer deposited on the surface of the working template shown in the first diagram. The third diagram is a schematic diagram of a protective layer deposited on the surface of the insulating dielectric layer shown in the second diagram. The fourth diagram is a schematic view of a catalyst layer deposited on the surface of the protective layer shown in the third diagram. The fifth diagram is a schematic diagram of forming an insulating layer on the surface of the catalyst layer shown in the fourth diagram. 1 The sixth diagram is a schematic diagram of the gap-growth carbon nanotube array of the insulating layer shown in the fifth diagram. The seventh diagram is a schematic diagram of depositing a negative feedback layer on the top of the nano-carbon tube array shown in the sixth diagram. The eighth figure is a schematic view of the cathode electrode deposited on the surface of the negative feedback layer shown in the seventh figure. The ninth figure is a schematic diagram of the cathode electrode package bottom plate shown in the eighth figure. The tenth figure is a schematic view of depositing a gate electrode on the surface of an insulating dielectric layer after removing the working plate in the ninth figure. The eleventh figure is a schematic view of etching the insulating dielectric layer in the tenth figure. The twelfth figure is a schematic view of etching the protective layer of the carbon nanotube in the eleventh figure. The thirteenth figure shows the structure of the field emission display after the display screen is packaged.
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