TWM276315U - Carbon nanotube layer structure - Google Patents

Carbon nanotube layer structure Download PDF

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Publication number
TWM276315U
TWM276315U TW94205329U TW94205329U TWM276315U TW M276315 U TWM276315 U TW M276315U TW 94205329 U TW94205329 U TW 94205329U TW 94205329 U TW94205329 U TW 94205329U TW M276315 U TWM276315 U TW M276315U
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Taiwan
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nano
carbon tube
layer
carbon
tube layer
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TW94205329U
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Chinese (zh)
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Jing-Shie Lin
Jin-Tian Shiau
Yi-Lung Jiang
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Powertip Technology Corp
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Priority to TW94205329U priority Critical patent/TWM276315U/en
Publication of TWM276315U publication Critical patent/TWM276315U/en

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M276315 八、新型說明: 【新型所屬之技術領域】 本創作係有關-種奈料管層結構,尤指—種於 中:成有规洞’而各孔祠之周壁具有多數由奈米二: 什出之奈米碳管的結構。 【先如技術】M276315 8. Description of the new type: [Technical field to which the new type belongs] This creative department is related to-a kind of nano-material tube layer structure, especially-a kind of middle: a regular hole. The structure of the carbon nanotube. [Xianru Technology]

2科技蓬勃發展,其巾在平_示轉感應_上 運用到奈米碳管層結構,而該奈讀管層 層與-基板以形成該平面顯示器與感應^她=== =之奈米碳管突出於該奈崎層,以形成多:= =運用該奈米碳管尖瑞放電原^ r ;" 碟匕、反應時間快、高經濟性、可大型化等優點, =核企#界所,故該奈米碳管層結構中碳管突出之高度 與數I,攸關產品品質之良窳不可不慎。 基板上成形奈料沒層之方式,在實驗室階段係以化 r成長法使多數根之奈米碳管成長於基板上,但此-方法目 易於大量生產之模式,且由於生長過程所需的高溫以及氣 •目/儿積均自性所造成的困難點不易突破,遂有 製作奈米碳管層,如第7圖 柘 l ’:’ 大丨… 巧不水反官層6 3,在塗佈該 咖侧繼娜㈣輪62細_而後進 5 M276315 行塗佈,待黏膠凝固即形成該奈米碳管層6 3。 然而,由於奈米硬管層63在塗佈前物 6 2與黏膠混拌,進行塗佈,因此奈 二 4置或傾斜狀態,且大部 一 者整根平躺而黏著於導奸6 ]之^ 6 2均會破轉包覆,或 突露出奈米_63表二艺面’這會導致奈米破管62 對顯示器而言,會二少’造成尖端之數量不夠,2 Technology is booming, and its towel uses nano-carbon tube layer structure on the flat display sensor, and the nano-reading tube layer and-substrate to form the flat display and sensing ^ she === = the nano The carbon tube protrudes from the Nagasaki layer to form multiple layers: = = Using the nano carbon tube sharp discharge source ^ r; " Dish, fast response time, high economy, large scale, etc., = nuclear enterprises # 界 所, so the height and number of the carbon tubes protruding in the nano-carbon tube layer structure are of great importance to the quality of the product. The method of forming nanomaterials and no layers on the substrate is to grow most of the carbon nanotubes on the substrate by chemical growth method in the laboratory stage, but this method is easy to mass-produce, and due to the growth process required The difficult points caused by the high temperature and the qi / membrane are not easy to break through, so there is a carbon nanotube layer made, as shown in Figure 7 柘 l ':' 大 丨… Coincidentally, the anti-government layer 6 3, On the side of coating the coffee cup, the thickness of the carbon fiber is 62 μm, and then 5 M276315 lines are applied, and the carbon nanotube layer 63 is formed when the adhesive is solidified. However, because the nano-hard tube layer 63 is mixed with the viscose and applied before coating, the nano-tube 4 is placed or tilted, and most of the one lies flat and adheres to the adulterate 6] ^ 6 2 will break the coating, or expose the nano_63 watch second art surface 'this will cause the nano tube to break 62. For the display, it will be two less', resulting in insufficient number of tips,

㈣好^ Γ 能,造成場發射均勻性不佳, 心’會影響縣應之效果,降低感應之準確性。 、可使。亥不米石火官層中具有數量較多之奈米破管凸伸的 結構,為本創作之創作重點。 【新型内容】 —本創作之主要目的,在於解決上述的問題而提供-種奈米碳 管層結構,其係於奈米碳管射形成多數之制,並於各該孔洞 之周壁分別具有多數延伸出之奈求碳管,以增加該奈米碳管之發 射或感果’而且本創作具有低成本、製程快速方便,以供達 到快速、向經濟及穩定性高之量產標準。 為達前述之目的,本創作係包括··一基板,該基板上具有一 導電層,且該導電層附著一奈米碳管層,該奈米碳管層内具有多 數之奈米碳官,且該奈米碳管層具有多數之孔洞,各該孔洞之周 i刀別具有多數由邊奈米碳管層内部延伸出之奈米礙管。 本創作之上述及其他目的與優點,不難從下述所選用實施例之詳 6 M276315 細_與附圖中,獲得深入了解。 當然,本創作在某些另件 但所選用之餘 3另件之支排上容許有所不同, 中展示其構造。 曰4,予以誶細說明,並於附圖 【實施方式】 5月参閱第1圖至第6A图mi 一 制。 丄寸利申明上並不父此種結構之限 其广實施例之奈米碳管層結構,如第1圖所示,其係包括:一 i二士具有—導電層2 ’該導電層2附著-奈米碳 ^ ㈣層3内具有多數之奈米碳管312 米碳管層3具有多數之孔、、同q Ί 、 见4者 一 / 3 1,各該孔洞3 1之周壁3 1 ·|八 以 別具有多數由該奈米碳管層3内部延伸出之奈米碳管3 U刀 供各該凸出於該奈米碳管層3之奈米礙管3工2形成—尖靖 欲製造該奈Μ管層3結構,於本實施例中,如第/圖及第 3圖所示’其係於該導電層2上以網版印刷之方式將多數之夺= 奴τ312混入玻璃粉與銀膠中,調配成漿料,形成於—二 、 丹令笔 層2之基板1上,再經微影製程於該奈米碳管層3之表面定義出 各該孔洞3 1欲蝕刻區域,再利用蝕刻的方法,將蝕刻區域進/一 蝕刻,俾使該奈米碳管層3形成多數孔洞3丄,由於在進行鈕六 過权中,該孔洞3 1位置之玻璃粉與銀膠會因蝕刻之作用y' M276315 落,但孔洞3 1位置之奈米碳管3 1 2,因本身特性而不受蚀刻 之影響,因而會於各該孔洞3 i之周壁3丄丄形成有多數突出: 奈米碳管312。 該奈米碳管層3運胁顯示糾,如第4 _示,須在节太 米碳管層3之孔洞3 1周邊設置介電層4丄與閘極層4㈣ Good ^ Γ energy, resulting in poor field emission uniformity, the heart ’will affect the county ’s response and reduce the accuracy of induction. Can make. There are a large number of nano-tube broken and protruding structures in the Heibumi stone fire official layer, which is the focus of this creation. [New content] —The main purpose of this creation is to solve the above problems and provide a kind of nano carbon tube layer structure, which is formed by the nano carbon tube to form a majority, and has a majority on the peripheral wall of each hole. The extended carbon tube is needed to increase the emission or fruit of the carbon tube '. Moreover, this creation has low cost and fast and convenient manufacturing process, so as to achieve fast, economical and stable production standards. In order to achieve the foregoing purpose, the creative system includes a substrate having a conductive layer on the substrate, and the conductive layer is attached with a carbon nanotube layer, and the carbon nanotube layer has a majority of carbon nanotubes. In addition, the nanometer carbon tube layer has a plurality of holes, and the periphery of each hole has a large number of nanometer obstruction tubes extending from the inside of the side nanometer carbon tube layer. The above and other purposes and advantages of this creation can be easily understood from the details of the selected embodiment below. Of course, this creation allows some differences in the branches of the other 3 alternatives, and the structure is shown in it. It will be described in detail on the 4th, and attached to the drawing. [Embodiment] In May, refer to FIG. 1 to FIG. 6A. It is stated that the structure of the nano carbon tube layer is not limited to its wide embodiment, as shown in FIG. 1, which includes: a conductive layer 2 and a conductive layer 2 'The conductive layer 2 Attachment-Nanocarbon ^ ㈣ layer 3 has a large number of nano-carbon tubes 312 meters carbon tube layer 3 has a large number of holes, the same as q 、, see 4 of 1/3 1, each of the holes 3 1 peripheral wall 3 1 · | Yabetsu has most of the nano carbon tube 3 U knife extended from the inside of the carbon tube layer 3 for the nano carbon tube 3 protruding from the nano carbon tube layer 3 to form 2- Jing wants to manufacture the structure of the nano-M tube layer 3. In this embodiment, as shown in FIG. 3 and FIG. 3, 'it is based on the conductive layer 2 and the majority is captured by screen printing. The glass powder and silver glue are mixed to form a slurry, which is formed on the substrate 1 of the tanning pen layer 2 and then lithographically defines the holes 3 1 on the surface of the nano carbon tube layer 3 Etching the area, and then using the etching method to further etch the etched area, so that the nano carbon tube layer 3 forms a large number of holes 3, because the hole 31 is in the glass at the position of 1 in the button 6 pass. The powder and silver glue will fall due to the effect of etching y 'M276315, but the nano carbon tube 3 1 2 at the hole 31 position is not affected by the etching due to its own characteristics, so it will be on the peripheral wall 3 i of each hole 3 i The salamander has the most prominent: carbon nanotube 312. The nano carbon tube layer 3 shows a correction, as shown in Section 4_. A dielectric layer 4 and a gate layer 4 must be provided around the holes 3 1 of the carbon nanotube layer 3

具有發光層51之陽極板5,而突出於各該孔洞3丄周壁3丄1 之奈米碳管3 1 2_成場發㈣’藉此,t施加—電^於場發 射源時,電子會從場發射源之尖端受閘極之牵引而放出,射向陽 極板5上設置之螢光層5!,而使螢光層5丄受激而發光;由二 各該孔洞3 1中之奈米碳f 3 χ 2係分科露’讓電子較易歸 出來’而可增加該奈米碳f3丄2之發射功效,使顯示器之發光An anode plate 5 having a light-emitting layer 51, and a nano-carbon tube 3 1 2_protruding from each of the holes 3 丄 peripheral wall 3_1 to form a field burst ′ It will be released from the tip of the field emission source by being pulled by the gate electrode, and will be emitted to the fluorescent layer 5! Provided on the anode plate 5, so that the fluorescent layer 5 will be excited and emit light; Nano-carbon f 3 χ 2 is based on the “Let the electrons return easily”, which can increase the emission efficiency of the nano-carbon f3 丄 2 and make the display emit light.

均勻性增加。 M 由上述可知,本創作之奈純管層結構,彻_只腐触銀 膠與玻璃粉而不腐#、奈㈣f之特性,可使該奈米碳管層社構之 孔洞中具有數量較多且突出高度較高之奈米·,轉^用奈 米碳管層結構碳管凸出高度較為不足之缺失,藉此,以增加該奈 米石厌官層之奈米碳管的發射或感應效果。 當然,本創作仍存在許多例子’可製造出相同之結構,其間 僅細節上之變化。請參閱第5圖至第6 Ail所示,其係本創作之 弟二實施例,其中’係於—具導電層2之基板1±排列有多數之 顆粒21,接著在該具顆粒21的導電層2上塗佈-混合有黏膠 8 M276315 - 與奈米碳管3 2 2之奈米碳管層3,由於該黏膠在乾燥後會有收 . 縮的現象,因此在顆粒21與顆粒21之間會因黏膠之收縮而形 成孔洞3 2,且位在該孔洞3 2位置之奈米碳管3 2 2則因黏膠 之收縮而外露凸出,而形成該奈米碳管層3具有多數孔洞3 2, ‘ 且孔洞3 2内具有多數凸出之奈米碳管3 2 2的結構;藉此,亦 可達到增加該奈米破管層之奈米碳管的發射或感應效果。 以上所述實施例之揭示係用以說明本創作,並非用以限制本 • 創作,故舉凡數值之變更或等效元件之置換仍應隸屬本創作之範 田壽。 【圖式簡單說明】 第1圖係本創作奈米碳管層結構之示意圖 第2圖係本創作奈米碳管層結構製作過程的示意圖之一 第3圖係本創作奈米碳管層結構製作過程的示意圖之二 第4圖係本創作奈米碳管層運用在顯示器結構之示意圖 • 第5圖係本創作第二實施例之奈米碳管層結構製作過程的示 意圖 , 第6圖係本創作第二實施例之奈米碳管層結構製作後的示意 . 圖 第6 A圖係本創作第二實施例之奈米碳管層結構製作後之俯 視圖 第7圖係習用奈米碳管層結構示意圖 M276315 【主要元件符號說明】 (習用部分) 基板6 導電層6 1 碳管6 2 奈米碳管層6 3 (本創作部分) 基板1 導電層2 奈米$炭管層3 孔洞31、3 2 周壁3 1 1 碳管 312、3 2 2 顆粒2 1 閘極層4 介電層4 1 陽極板5 螢光層5 1 10Uniformity increases. M From the above, it can be seen that the pure tube layer structure of this creation completely rots in contact with the silver glue and glass powder but does not rot. The characteristics of the nano carbon tube layer structure can make the carbon tube layer structure more quantitative. There are many nanometers with a high protruding height, and the carbon nanotube layer structure of the carbon nanotubes is used to reduce the lack of protruding height of the carbon tubes, thereby increasing the emission or Induction effect. Of course, there are still many examples of this creation ’that can produce the same structure, with only minor changes in detail. Please refer to FIG. 5 to FIG. 6 Ail, which is the second embodiment of this creation, in which 'is connected to-a substrate 1 with a conductive layer 2 ± a plurality of particles 21 are arranged, and then the conductive particles 21 Layer 2 coated with adhesive 8 M276315-Nano carbon tube layer 3 with nano carbon tube 3 2 2 because the viscose will be collected after drying. Shrink phenomenon, so in particles 21 and particles A hole 3 2 will be formed by the shrinkage of the adhesive between 21, and the nano carbon tube 3 2 2 located at the position of the hole 32 will be exposed due to the shrinkage of the adhesive to form the nano carbon tube layer. 3 has a large number of holes 3 2, 'and a large number of protruding carbon nanotubes 3 2 2 in the holes 3 2; thereby, it is also possible to increase the emission or induction of the carbon nanotubes of the nano tube breaking layer. effect. The disclosure of the above-mentioned embodiments is used to explain the creation, and is not intended to limit the creation. Therefore, any change in numerical values or replacement of equivalent components should still belong to Tian Tianshou, the creator of this creation. [Schematic description] Figure 1 is a schematic diagram of the carbon nanotube layer structure of the original creation. Figure 2 is one of the schematic diagrams of the production process of the carbon nanotube layer structure of the original creation. The second schematic diagram of the production process. Figure 4 is a schematic diagram of the nano-carbon tube layer used in the display structure of this creative creation. Figure 5 is a schematic diagram of the nano-carbon tube layer structure manufacturing process of the second embodiment of this creative. The schematic diagram of the nano carbon tube layer structure after the second embodiment of this creation is made. Figure 6A is a top view of the nano carbon tube layer structure after the second embodiment of this creation is made. The seventh picture is a conventional nano carbon tube. Layer structure diagram M276315 [Description of main component symbols] (conventional part) Substrate 6 Conductive layer 6 1 Carbon tube 6 2 Nano carbon tube layer 6 3 (This creative part) Substrate 1 Conductive layer 2 Nano $ carbon tube layer 3 Hole 31 , 3 2 peripheral wall 3 1 1 carbon tube 312, 3 2 2 particles 2 1 gate layer 4 dielectric layer 4 1 anode plate 5 fluorescent layer 5 1 10

Claims (1)

M276315 九、申請專利範圍: 1 · 一種奈米碳管層結構,其係包括··一基板,該基板上具有一 導電層,該導電層上塗佈一奈米碳管層,其改良在於: 該奈米碳管層内具有多數之奈米碳管,且該奈米碳管層 具有多數之孔洞,各該孔洞之周壁分別具有多數由該奈米碳 管層内部延伸出之奈米碳管。 2 ·如申請專利範圍第1項所述一種奈米碳管層結構,其中,該 奈米碳管層之各該孔洞係呈陣列狀排列。 3 ·如申請專利範圍第1項所述一種奈米碳管層結構,其中,該 奈米礙管係為單壁奈米碳管。 4 ·如申請專利範圍第1項所述一種奈米碳管層結構,其中,該 奈米碳管係為多壁奈米碳管。 5 ·如申請專利範圍第1項所述一種奈米碳管層結構,其中,該 基板係為破璃基板。 11M276315 9. Scope of patent application: 1. A nano-carbon tube layer structure, which includes a substrate with a conductive layer on the substrate, and a nano-carbon tube layer coated on the conductive layer. The improvements include: The nano carbon tube layer has a plurality of nano carbon tubes in the nano carbon tube layer, and the nano carbon tube layer has a plurality of holes, and the peripheral wall of each hole has a plurality of nano carbon tubes extending from the inside of the nano carbon tube layer. . 2. The nano carbon tube layer structure according to item 1 of the scope of the patent application, wherein the holes of the nano carbon tube layer are arranged in an array. 3. The nano-carbon tube layer structure according to item 1 of the scope of the patent application, wherein the nano-barrier tube system is a single-walled carbon carbon tube. 4. The nano-carbon tube layer structure according to item 1 in the scope of the patent application, wherein the nano-carbon tube is a multi-walled carbon tube. 5. The nano-carbon tube layer structure according to item 1 of the scope of patent application, wherein the substrate is a glass-breaking substrate. 11
TW94205329U 2005-04-06 2005-04-06 Carbon nanotube layer structure TWM276315U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426046B (en) * 2011-01-05 2014-02-11 Hon Hai Prec Ind Co Ltd Method for forming defect on carbon nanotube
TWI464903B (en) * 2011-06-24 2014-12-11 Hon Hai Prec Ind Co Ltd Epitaxial base, method of making the same and application of epitaxial base for growing epitaxial layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426046B (en) * 2011-01-05 2014-02-11 Hon Hai Prec Ind Co Ltd Method for forming defect on carbon nanotube
TWI464903B (en) * 2011-06-24 2014-12-11 Hon Hai Prec Ind Co Ltd Epitaxial base, method of making the same and application of epitaxial base for growing epitaxial layer

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