CN101462693A - Method for in-situ construction of micro-nano device - Google Patents
Method for in-situ construction of micro-nano device Download PDFInfo
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- CN101462693A CN101462693A CNA2008101437602A CN200810143760A CN101462693A CN 101462693 A CN101462693 A CN 101462693A CN A2008101437602 A CNA2008101437602 A CN A2008101437602A CN 200810143760 A CN200810143760 A CN 200810143760A CN 101462693 A CN101462693 A CN 101462693A
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Abstract
The invention discloses an in-situ construction method for a micro-nano device, and in particular relates to a method for in-situ construction of the micro-nano device by a maskless lithography, which is a novel method arranging nanomaterials between electrodes and connecting the nanomaterials with the electrodes. The process comprises the steps of distributing the nanomaterials on a substrate, glue evening, positioning the nanomaterials by a maskless lithography machine, designing an exposure figure in situ and exposing, developing, fixation, depositing and stripping a metal layer, and finally forming a prototype micro-nano device of which the nanomaterials are positioned under the electrodes and connected with the electrodes. The method is particularly suitable for the in-situ construction of devices with complex nano structures, and the device can further construct micro-nano devices with other structures, including nanomaterial field effect transistors, micro-nano sensors, oscillators, phasers, and the like. The method has the advantages of in-situ preparation, low cost, simple process, quick speed, and little damage to the devices, and is a construction method for micro-nano device units with wide application prospect.
Description
Technical field
The present invention relates to a kind of construction method of micro-nano device, be a kind of fast, the in-situ construction method of the little micro-nano device of damage, be particularly suitable for large-area device preparation.
Background technology
Nanometer technology is 21 century important new scientific and trechnolocial undertaking, and a large amount of nano material and devices constantly are developed, and show unprecedented application prospect in every field such as information, medical science and national defence.Micro-nano device is an important research field in the nanosecond science and technology, is important channel and the bridge that nanosecond science and technology are moved towards practical application.Also there are many technical difficult problems in the research of micro-nano device at present.
Be connected the preparation of so basic micro-nano structure unit between two electrodes for nano material, method at present commonly used can be divided into following several substantially: 1) adopt to be coated with nano material, ESEM in mark, the substrate and to search series of process processes such as the importing of nano material position, exposure figure, beamwriter lithography and prepare nano material and place under the metal electrode layer, be connected the micro-nano device between the electrode.This method also is a kind of maskless lithography method of in-situ construction of micro-nano device, can realize less device size, thereby by more use.Yet this method is bigger to material damage, and because beamwriter lithography equipment cost height, maintenance cost height, preparation speed are slow, therefore is unfavorable for prepared in batches.
2) adopt and to prepare earlier metal electrode, nano material is implemented in method on the electrode again.The technological difficulties of this method are that nano material is connected on the electrode.Required litho machine can be the beamwriter lithography machine, and the conventional litho machine of band mask plate also comprises the maskless photoetching machine that the present invention is used, also comprises nanometer embossing.This method can prepare multiple micro-nano device, and range of application is wider.But beamwriter lithography has 1) described in some shortcomings; And the conventional litho machine of band mask plate is because the difference of exposure figure just needs different mask plates, thereby use cost is higher; Nanometer embossing can prepare the nano graph structure in repeatability ground on large tracts of land, also has extremely low, simple, the efficient advantages of higher of cost of manufacture, yet this method needs high-quality imprint lithography masterplate and expensive platelet defects checking tool, also need other instruments to realize aligning between each layers of circuit, it is bigger to implement difficulty.
Summary of the invention
Technical problem to be solved by this invention provides a kind of construction method of lower-cost original position micro-nano device newly, this method had both avoided beamwriter lithography to the damage of device with prepare slow-footed shortcoming, also avoided the more mask plate of use cost comparatively high amts, method is simple to operation, and can guarantee that interelectrode passage is a nano material, be particularly suitable for the preparation of micro-nano antetype device.
Technical scheme provided by the invention is a kind of in-situ construction method of micro-nano device, may further comprise the steps:
(6) nano material is distributed on the substrate base;
(7) gluing on substrate comprises even glue;
(8) microscopic system of utilization maskless photoetching machine is searched the position of nano material, uses maskless photoetching machine original position design wait the to expose figure of electrode again, and nano material is connected between the electrode pattern;
(9) utilization maskless photoetching machine original position exposure, development, photographic fixing then;
(10) on substrate the deposit metal electrodes layer, peel off, obtain nano material at last and be connected between the electrode and be positioned at micro-nano device (as shown in Figure 1) under the electrode.
The described nano material of above-mentioned steps (1) is the nano material that can prepare, and comprises the nanometer system of zero-dimension nano material, monodimension nanometer material, two-dimensional nano material or composite construction; Wherein, the nanometer system of composite construction comprises Y shape, polygonal nanometer material, polynary nanometer system and other compound system.
Described nano material also can be inorganic nano material, also can be organic nano material or biological nano material; Can be single nano material, also can be a plurality of nano materials; The characteristic dimension of nano material is between 1 nanometer-1 centimetre.
The dispersion of the described nano material of above-mentioned steps (1) on substrate base, can be at first to utilize ultrasonic method that nano material evenly is dispensed into corresponding solution, ethanolic solution for example, use buret that solution is dispersed on the substrate base then, also solution is used the method for spin coating, can also be the method for solution being used spraying, solution is dispersed on the substrate base, treat to form the dispersion of nano material on substrate base behind the solution evaporation.Can also adopt the method for microfluid (microfluidic) nano material to be distributed on the substrate base by actual needs, also can adopt the probe of AFM AFM or the probe of other kind to move nano material, nano material is distributed on the substrate base by the purpose requirement, more can adopts means such as tweezers directly selected materials to be distributed or be placed on the substrate base.
The described electrode of above-mentioned steps (3) is to prepare on the insulating barrier of substrate, and the insulating barrier of substrate is an insulating materials, comprises SiO
2, glass and high dielectric material; Wherein high dielectric material comprises Si
3N
4, Al
2O
3, HfO
2, Y
2O
3, La
2O
3, Ta
2O
5, TiO
2, LaAlO
3In at least a; Thickness of insulating layer is 1 nanometer-10 centimetre.
Described maskless photoetching machine is the key equipment of in-situ construction of micro-nano device.
The method of described in-situ preparing electrode, it can be gluing in substrate, utilize the microscopic system of maskless photoetching machine, find the position of relevant nanometer material, then in this Position Design and import the exposure figure of two electrode shapes, make the nano material two ends between two electrodes, can also and import the exposure figure of a plurality of electrodes, make nano material be connected with electrode in this Position Design.
The three electrode method of described in-situ preparing, it can be gluing in substrate, utilize the microscopic system of maskless photoetching machine, find relevant nanometer material three ends and substrate position contacting, import three electrode exposure figure in this position then, make nano material between three electrodes and with the figure of electrode, be connected.
The two ends of the described nano material that links to each other with electrode are positioned under two electrode material layers, and three ends with nano material of Y shape, quadrangular pyramid shape are positioned under three electrode material layers.
The microscopic system of above-mentioned described step (3) utilization maskless photoetching machine finds the position of relevant nanometer material, find the nano material position after, at this Position Design wait to expose figure of electrode, make being connected of nano material with electrode.
The described nano material of above-mentioned steps (3) is connected with electrode, can be that end connection, two ends connection, three ends or multiterminal connect; In the designed electrode pattern, do not need every end of nano material all to be connected, do not need each electrode all to be connected yet with nano material with electrode.
Above-mentioned steps (3) is described can be the microscopic system of utilization maskless photoetching machine, finds the position of Y shape nano material, designs the exposure figure of three electrodes then at three end positions of Y shape, makes nano material be connected between electrode and with electrode.
Above-mentioned steps (3) is described also can be the microscopic system of utilization maskless photoetching machine, find the position of quadrangular pyramid shape nano material, three end positions that contact with substrate at material design the exposure figure of three electrodes then, make nano material be connected between electrode and with electrode.
Prepared electrode does not need each all to be connected with nano material, can not contact with nano material, and as the grid of device, the current potential or the carrier concentration of regulation and control device.
Spacing between the electrode that is connected with nano material of the described gained of above-mentioned steps (5) is less than the length of nano material; Distance between electrodes is between 1 nanometer to 1 centimetre.
The described deposit metal electrodes layer of above-mentioned steps (5) deposits layer of conductive material for adopting thermal evaporation, sputter or electron beam evaporation method on substrate, described conductive material comprises: the compound or combination of one or more in (1) Au, Ag, Ti, Pt, Pd, AuGe, Ta, W, Co, Mo, Cr, the Ni metal; (2) metal oxide; (3) other inorganic matter or organic matter conductive material; (4) metal or semiconductor nano material; Wherein, the thickness of metal electrode is between 1 nanometer to 1 millimeter, and the characteristic dimension of conductive material is between 1 nanometer-1 centimetre.
Based on this micro-nano device, can further process, be prepared into other micro-nano device and construction unit, comprise transistor, sensor.
Describe the present invention in detail below in conjunction with the drawings and specific embodiments.
Description of drawings
Fig. 1 is the theory structure schematic diagram of micro-nano device of the present invention, and wherein the nano material two ends link to each other with two electrodes, place under two electrodes, contact with substrate;
Fig. 2 is the top gate transistor device principle structural representation that utilizes antetype device of the present invention further to be processed into, and wherein nano material is the nano material of semiconductive, and two ends link to each other with two electrodes, place under two electrodes, contact with substrate;
Fig. 3 is the micro-nano device of embodiment 8 preparations, and grid is positioned on the base insulating layer, under the transistor insulating layer;
Fig. 4 is three end micro-nano devices of embodiment 9 in-situ preparing;
Fig. 5 is the micro-nano device planar structure schematic diagram of embodiment 10 in-situ preparing;
Fig. 6 is the micro-nano device planar structure schematic diagram of embodiment 11 in-situ preparing.
Reference numeral:
Insulating barrier 3 nano materials 4 of 1 two electrode 2 substrates that are connected with nano material do not comprise the transistorized insulating barrier of substrate 5 top gate structures of insulating barrier, as 7 one kinds of grids of the transistorized grid of gate medium 6 top gate structures be positioned at the below 8 one kinds of grids of transistorized grid be positioned at the below transistorized insulating barrier, as gate medium 9 four horn shape nano materials, wherein three ends are connected four horn shape nano materials are connected nano material with three electrodes 11 of substrate contact four electrodes that electrode 12 is not connected with nano material with substrate contact 10
The specific embodiment
Select the n of (001) orientation for use
+The type highly doped silicon grows the SiO of one deck 500 nanometer thickness as substrate 4 by the method for thermal oxide on silicon face
2Layer, as the insulating barrier 2 of substrate, as shown in Figure 1, wherein nano material 3 is a CNT, and diameter is 10 nanometers, and length is 10 microns, and is synthetic by chemical gaseous phase depositing process.At first utilize ultrasonic method that even carbon nanotube is dispensed into ethanolic solution, use the method for spin coating or spraying that solution is dispersed on the substrate base then, treat that ethanol volatilization back forms the even dispersion of CNT on substrate.At the even glue in substrate insulating barrier 2 surfaces, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of first CNT, original position imports two electrode exposure figures and exposes then, utilizes similar method at second, the 3rd ... N CNT place exposure.Through developing fixing, adopt the method for electron beam evaporation successively to deposit the titanium of 10 nanometer thickness and the gold of 50 nanometer thickness, form two electrodes 1 after peeling off cleaning, the size of each electrode is 100 microns * 100 microns, spacing between the electrode is 0.5 micron, promptly obtains N prototype micro-nano device.
Select for use common insulating glass as substrate 2 and 4, as shown in Figure 1, wherein nano material 3 is the ZnO nano wire, and diameter is 30 nanometers, and length is 2 microns, and is synthetic by physical method.Use the method for microfluid that the ZnO nano wire is dispersed on the substrate base.At the even glue in substrate insulating barrier 2 surfaces, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of first ZnO nano wire, original position designs two electrode exposure figures and imports figure to the relevant position then, expose, utilize similar method ... N ZnO nano wire place exposure at second, the 3rd.Through developing fixing, the method for employing thermal evaporation deposits the gold of 80 nanometer thickness, forms two electrodes 1 after peeling off cleaning, and the size of each electrode is 200 microns * 200 microns, and the spacing between the electrode is from being variation between 1 micron.Promptly obtain N prototype micro-nano device.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the HfO of 10 nanometer thickness as substrate 4 by atomic layer deposition system at silicon face
2, as the insulating barrier 2 of substrate, as shown in Figure 1, wherein nano material 3 is a tin oxide nano-wire, and diameter is 40 nanometers, and length is 3 microns, and is synthetic by physical method.At first utilize ultrasonic method that tin oxide nano-wire evenly is dispensed into ethanolic solution, use the method for spraying that solution is dispersed on the substrate base then, treat that ethanol volatilization back forms the even dispersion of tin oxide nano-wire on substrate.At the even glue in substrate insulating barrier 2 surfaces, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of first tin oxide nano-wire, original position imports two electrode exposure figures and exposes then, utilizes similar method at second, the 3rd ... N tin oxide nano-wire place exposure.Through developing fixing, adopt the method for sputter successively to deposit the silver of 20 nanometer thickness and the gold of 30 nanometer thickness, after peeling off cleaning, form two electrodes 1, the size of each electrode is 500 microns * 500 microns, the spacing between the electrode is 0.6 micron.Promptly obtain N prototype micro-nano device.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the HfO of 10 nanometer thickness as substrate 4 at silicon face with atomic layer deposition system
2, as the insulating barrier 2 of substrate, as shown in Figure 1, wherein nano material 3 is the ZnO nano wire, and diameter is 10 nanometers, and length is 2 microns, and is synthetic by physical method.Use the probe of probe station system to move 100 ZnO nano wires, it is evenly being disperseed on 2 in substrate.The surface is spared glue, is searched the position of 100 ZnO nano wires, original position design exposure figure and exposure successively with the maskless photoetching machine microscopic system, developing fixing then, adopt the electron beam evaporation system successively to deposit the titanium of 10 nanometer thickness and the gold of 50 nanometer thickness, peel off and clean, form two electrodes 1, the size of each electrode is 30 microns * 30 microns, and the spacing between the electrode is 1 micron.Promptly obtain 100 prototype micro-nano devices.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the HfO of 10 nanometer thickness as substrate 4 at silicon face with atomic layer deposition system
2, as the insulating barrier 2 of substrate, as shown in Figure 1, wherein nano material 3 is the ZnO nano wire, and diameter is 10 nanometers, and length is 2 microns, and is synthetic by physical method.Use the probe of probe station system to move 100 ZnO nano wires, it is evenly being disperseed on 2 in substrate.The surface is spared glue, is searched the position of 100 ZnO nano wires, original position importing exposure figure and exposure successively with the maskless photoetching machine microscopic system, developing fixing then, adopt the electron beam evaporation system successively to deposit the titanium of 10 nanometer thickness and the gold of 50 nanometer thickness, peel off and clean, form two electrodes 1, the size of each electrode is 300 microns * 300 microns, and the spacing between the electrode is 1 micron.Promptly obtain 100 prototype ZnO nano wire micro-nano devices.With n
+Type highly doped silicon 4 is as transistorized back of the body grid, and electrode 1 is as transistorized source-drain electrode, and the ZnO nano material obtains 100 ZnO nano-wire transistors with same back of the body grid as transistorized raceway groove.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the HfO of 10 nanometer thickness as substrate 4 at silicon face with atomic layer deposition system
2, as the insulating barrier 2 of substrate, as shown in Figure 2, wherein nano material 3 is the ZnO nano wire, and diameter is 10 nanometers, and length is 2 microns, and is synthetic by physical method.Use the probe of probe station system to move 100 ZnO nano wires, it is evenly being disperseed on 2 in substrate.The surface is spared glue, is searched the position of 100 ZnO nano wires, original position importing exposure figure and exposure successively with the maskless photoetching machine microscopic system, developing fixing then, adopt the electron beam evaporation system successively to deposit the titanium of 10 nanometer thickness and the gold of 50 nanometer thickness, peel off and clean, form two electrodes 1, the size of each electrode is 100 microns * 100 microns, and the spacing between the electrode is 1 micron.Promptly obtain 100 prototype micro-nano devices.On this substrate, deposit the HfO of 10 nanometer thickness then with atomic layer deposition system
2As gate medium 5, even thereon glue, utilize the microscopic system of maskless photoetching machine to search the ZnO nano wire and be connected to figure between two electrodes, design the exposure of gate patterns and original position herein, adopt the electron beam evaporation system to deposit the gold of 50 nanometer thickness, peel off and clean, obtain having top grid 6, prepare the ZnO nano-wire transistor of top gate structure.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the Si of 70 nanometer thickness as substrate 4 at silicon face with atomic layer deposition system
3N
4, as the insulating barrier 2 of substrate, as shown in Figure 2, wherein nano material 3 is a semiconductive carbon nano tube, and diameter is 10 nanometers, and length is 10 microns, and is synthetic by chemical gaseous phase depositing process.Use the probe of AFM to move 100 CNTs on substrate 2 surfaces, it is evenly disperseed in substrate.The surface is spared glue, is searched the position of 100 CNTs, original position design exposure figure and exposure successively with the maskless photoetching machine microscopic system, developing fixing then, adopt the electron beam evaporation system to deposit the Pd of 50 nanometer thickness, peel off and clean, form two electrodes 1, the size of each electrode is 100 microns * 100 microns, and the spacing between the electrode is 1 micron.Promptly obtain 100 prototype CNT micro-nano devices.On this substrate, deposit the HfO of 10 nanometer thickness then with impulse laser deposition system
2As gate medium 5, even thereon glue, utilize the microscopic system of maskless photoetching machine to search CNT and be connected to figure between two electrodes, design and import the exposure of gate patterns and original position herein, adopt the electron beam evaporation system to deposit the gold of 50 nanometer thickness, peel off and clean, obtain having top grid 6, prepare the carbon nanometer transistor of top gate structure.
Embodiment 8
Select for use common insulating glass as substrate 4 and 2, as shown in Figure 3, in substrate, prepare the metal level Pt of 60 nanometers, as preparing transistorized grid 7.On metal level, prepare the La of 60 nanometers with the method for pulsed laser deposition
2O
3As gate medium 8.(diameter is 30 nanometers with the ZnO nano wire, length is 2 microns, synthetic by physical method) utilize ultrasonic method evenly to be dispensed into ethanolic solution, use the method for spraying that solution is dispersed on the substrate base then, treat that ethanol volatilization back forms the even dispersion of ZnO nano wire on substrate.At the even glue in substrate insulating barrier 2 surfaces, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of first ZnO nano wire, original position designs and imports two electrode exposure figures then, expose, utilize similar method ... N ZnO nano wire place exposure at second, the 3rd.Through developing fixing, the method for employing sputter deposits the gold of 80 nanometer thickness, forms electrode 1 as transistorized source-drain electrode after peeling off cleaning, and the size of each electrode is 100 microns * 200 microns, and the spacing between the electrode is 0.6 micron.Promptly obtain N ZnO nano-wire transistor.
Embodiment 9
Select the n of (001) orientation for use
+The type highly doped silicon grows the SiO of one deck 500 nanometer thickness as substrate by the method for thermal oxide on silicon face
2Layer, as the insulating barrier of substrate, as shown in Figure 4, wherein nano material 9 is a quadrangular pyramid shape ZnO nano material, and is synthetic by physical method.Quadrangular pyramid shape ZnO nano material is dispersed on the substrate base.At the even glue of substrate surface of insulating layer, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of first quadrangular pyramid shape ZnO nano material, its three end contacts with substrate.Original position designs three electrode patterns and exposes, and utilizes similar method at second, the 3rd ... N quadrangular pyramid shape ZnO nano material place exposure.Through developing fixing, the method for employing electron beam evaporation successively deposits the gold of 50 nanometer thickness, forms three electrodes 10 after peeling off cleaning, and the size of each electrode is 100 microns * 100 microns, promptly obtains N prototype micro-nano device.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the HfO of 10 nanometer thickness as substrate by atomic layer deposition system at silicon face
2, as the insulating barrier of substrate, nano material 3 is a tin oxide nano-wire, and diameter is 20 nanometers, and length is 30 microns, and is synthetic by physical method.At first utilize ultrasonic method that tin oxide nano-wire evenly is dispensed into ethanolic solution, use the method for spraying that solution is dispersed on the substrate base then, treat that ethanol volatilization back forms the even dispersion of tin oxide nano-wire on substrate.At the even glue of substrate surface of insulating layer, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of a tin oxide nano-wire, the original position importing has the figure of four electrodes and exposes then, through developing fixing, adopt the method for sputter successively to deposit the titanium of 10 nanometer thickness and the gold of 30 nanometer thickness, after peeling off cleaning, form four electrodes 11) (as shown in Figure 5), promptly obtain a tin oxide nano-wire prototype micro-nano device that is connected with four electrodes.
Select the n of (001) orientation for use
+The type highly doped silicon deposits the Si of 50 nanometer thickness as substrate by atomic layer deposition system at silicon face
3N
4, as the insulating barrier of substrate, nano material 3 is a tin oxide nano-wire, and diameter is 20 nanometers, and length is 10 microns.At first utilize ultrasonic method that tin oxide nano-wire evenly is dispensed into ethanolic solution, use the method for spraying that solution is dispersed on the substrate base then, treat that ethanol volatilization back forms the dispersion of tin oxide nano-wire on substrate.At the even glue of substrate surface of insulating layer, substrate is placed under the microscopic system of maskless photoetching machine and observes, find out the position of a tin oxide nano-wire, the original position importing has the figure of three electrodes and exposes then, through developing fixing, adopt the method for sputter successively to deposit the titanium of 10 nanometer thickness and the gold of 60 nanometer thickness, after peeling off cleaning, form three electrodes, wherein two electrodes 1 are connected with the two ends of nano material, another electrode 12 be not connected (as shown in Figure 6) with the nanometer material, be used to regulate and control the carrier concentration of nano material, promptly obtain a tin oxide nano-wire micro-nano device.
Claims (10)
1, a kind of in-situ construction method of micro-nano device is characterized in that, may further comprise the steps:
(1) nano material is distributed on the substrate base;
(2) gluing on substrate comprises even glue;
(3) microscopic system of utilization maskless photoetching machine is searched the position of nano material, uses maskless photoetching machine original position design wait the to expose figure of electrode again, and nano material is connected between the electrode pattern;
(4) utilization maskless photoetching machine original position exposure, development, photographic fixing then;
(5) on substrate the deposit metal electrodes layer, peel off, obtain nano material at last and be connected between the electrode and be positioned at micro-nano device under the electrode.
2, according to the construction method of the described micro-nano device of claim 1, it is characterized in that, the described nano material of step (1) is the nano material that can prepare, and comprises the nanometer system of zero-dimension nano material, monodimension nanometer material, two-dimensional nano material or composite construction; Wherein, the nanometer system of composite construction comprises Y shape, polygonal nanometer material, polynary nanometer system and other compound system; The characteristic dimension of nano material is between 1 nanometer-1 centimetre.
3, construction method according to the described micro-nano device of claim 1, it is characterized in that, the described process that nano material is distributed on the substrate base of step (1) is: utilize ultrasonic method that nano material evenly is dispensed into corresponding solution, with one of following method nano material solution is dispersed on the substrate base: (1) uses buret that nano material solution is dispersed on the substrate base again, treat to form the distribution of nano material on substrate base behind the solution evaporation, (2) use the method for spin coating or spraying that nano material solution is dispersed on the substrate base, treat to form the distribution of nano material on substrate base behind the solution evaporation; Or adopt one of following method that nano material is dispersed on the substrate base: the method that (1) adopts microfluid distributes nano material on the substrate base by actual needs, (2) adopt the probe of AFM or the probe of other kind to move nano material, nano material is distributed on the substrate base by the purpose requirement, and (3) are adopted tweezers directly selected materials to be distributed or are placed on the substrate base.
According to the construction method of the described micro-nano device of claim 1, it is characterized in that 4, the described electrode of step (3) is to prepare on the insulating barrier of substrate; The insulating barrier of substrate is an insulating materials, comprises SiO
2, glass or high dielectric material; Described high dielectric material comprises Si
3N
4, Al
2O
3, HfO
2, Y
2O
3, La
2O
3, Ta
2O
5, TiO
2, LaAlO
2In at least a; Thickness of insulating layer is 1 nanometer-10 centimetre.
5, according to the construction method of the described micro-nano device of claim 1, it is characterized in that, the microscopic system of described step (3) utilization maskless photoetching machine, find the position of relevant nanometer material, after finding the nano material position, at this Position Design wait to expose figure of electrode, make being connected of nano material with electrode.
6, according to the construction method of the described micro-nano device of claim 1, it is characterized in that, the described nano material of step (3) and electrode be connected to that an end is connected, two ends connect, three ends connect or multiterminal connect; In the designed electrode pattern, do not need every end of nano material all to be connected, do not need each electrode all to be connected yet with nano material with electrode.
7, according to the construction method of the described micro-nano device of claim 1, it is characterized in that, the microscopic system of described step (3) utilization maskless photoetching machine, find the position of Y shape nano material, design the exposure figure of three electrodes then at three end positions of Y shape, make nano material between electrode and with electrode, be connected.
8, according to the construction method of the described micro-nano device of claim 1, it is characterized in that, the microscopic system of described step (3) utilization maskless photoetching machine, find the position of quadrangular pyramid shape nano material, three end positions that contact with substrate at material design the exposure figure of three electrodes then, make nano material be connected between electrode and with electrode.
According to the construction method of the described micro-nano device of claim 1, it is characterized in that 9, the spacing between the electrode that is connected with nano material of step (5) gained is less than the length of nano material; Distance between electrodes is between 1 nanometer to 1 centimetre.
10, according to the construction method of the described micro-nano device of claim 1, it is characterized in that, the described deposit metal electrodes layer of step (5) deposits layer of conductive material for adopting thermal evaporation, sputter or electron beam evaporation method on substrate, described conductive material comprises: the compound or combination of one or more in (1) Au, Ag, Ti, Pt, Pd, AuGe, Ta, W, Co, Mo, Cr, the Ni metal; (2) metal oxide; (3) other inorganic matter or organic matter conductive material; (4) metal or semiconductor nano material; Wherein, the thickness of metal electrode is between 1 nanometer to 1 millimeter, and the characteristic dimension of conductive material is between 1 nanometer-1 centimetre.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109631811A (en) * | 2019-01-07 | 2019-04-16 | 新疆交通建设集团股份有限公司 | Vibrating string type strain transducer and preparation method thereof |
| CN110342504A (en) * | 2019-06-28 | 2019-10-18 | 西安交通大学 | A kind of preparation method of graphene nanobelt |
-
2008
- 2008-11-28 CN CNA2008101437602A patent/CN101462693A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109631811A (en) * | 2019-01-07 | 2019-04-16 | 新疆交通建设集团股份有限公司 | Vibrating string type strain transducer and preparation method thereof |
| CN110342504A (en) * | 2019-06-28 | 2019-10-18 | 西安交通大学 | A kind of preparation method of graphene nanobelt |
| CN110342504B (en) * | 2019-06-28 | 2021-05-28 | 西安交通大学 | Preparation method of graphene nanoribbon |
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