TW200416496A - EUV exposure method, EUV exposure apparatus and exposure substrate - Google Patents
EUV exposure method, EUV exposure apparatus and exposure substrate Download PDFInfo
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- TW200416496A TW200416496A TW92132359A TW92132359A TW200416496A TW 200416496 A TW200416496 A TW 200416496A TW 92132359 A TW92132359 A TW 92132359A TW 92132359 A TW92132359 A TW 92132359A TW 200416496 A TW200416496 A TW 200416496A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
200416496 玖、發明說明： 【發明所屬之技術領域】 本發明係關於使用EUV(Extreme Ultravi〇iet:超紫外 )光’使形成於光罩上的圖案曝光到塗布有光阻的晶圓上 之EUV曝光方法及EUV曝光裝置。尤其是關於可抑制自塗 布有光阻的晶圓之氣體放出，可得到長期穩定的成像性能 之EUV曝光方法及EUV曝光裝置。 【先前技術】 近年來’隨著半導體積體電路的微細化，為提高因光 的繞射界限而受到限制之光學系統的解像力，使用較習知 的紫外線為短波長（ll〜14nm)的EUV光之投影微影技術一直 在開發中（例如，參照非專利文獻1)。此EUV微影技術， 作為用以得到無法以習知的波長1 90nm程度的光線之光微 影術來實現的70nm以下的解像力之技術而受到期待。 EUV光的波長區域之物質的複折射率η可用n = i-(J-ik(5、k為實數）來表示。此折射率的虛部k表示EUV光 的吸收。由於5、k與1相比為非常小，故在此區域的折 射率非常接近於1。因此，無法使用習知的透鏡般的透過 折射型的光學元件。而使用利用折射率僅較1略小所致的 全反射的斜入射鏡、或以在界面處的微弱反射光相位一致 的方式多數疊合而使整體得到高反射率的多層膜反射鏡。 於13. 4nm附近的波長域，若使用鉬（M〇)層與矽（si)層 交替積層所成的Mo/Si多層膜，則於正入射下可得到 67. 5%的反射率，於波長3ηιη附近的波長域，若使用M〇 200416496 層與皱（Be)層交替積層所成之Mo/Be多層膜，則於正入射 下了件到7 0 · 2 %的反射率（例如，參照非專利文獻2 )。200416496 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to EUV (Extreme Ultravioet: light) used to expose a pattern formed on a photomask to a photoresist coated wafer Exposure method and EUV exposure device. In particular, it relates to an EUV exposure method and an EUV exposure device that can suppress gas evolution from a wafer coated with a photoresist and obtain long-term stable imaging performance. [Prior art] In recent years, with the miniaturization of semiconductor integrated circuits, in order to improve the resolution of optical systems that are restricted by the diffraction limit of light, the conventional UV light with a short wavelength (11 to 14 nm) is used. Light projection lithography technology has been under development (see, for example, Non-Patent Document 1). This EUV lithography technique is expected as a technique for obtaining a resolution of 70 nm or less that cannot be achieved by conventional light lithography using light having a wavelength of about 1 90 nm. The complex refractive index η of a substance in the wavelength region of EUV light can be expressed by n = i- (J-ik (5, k is a real number). The imaginary part k of this refractive index represents the absorption of EUV light. Since 5, k and 1 The refractive index is very small, so the refractive index in this region is very close to 1. Therefore, the conventional lens-like transmission-refractive optical element cannot be used. Instead, the total reflection caused by the refractive index being only slightly smaller than 1 is used. Oblique incident mirrors, or multiple superimposed layers in such a way that the phase of the weakly reflected light at the interface are consistent, so that a high reflectivity multilayer film mirror is obtained as a whole. In the wavelength region near 13.4nm, if molybdenum (M〇) is used Mo / Si multilayer film formed by alternately stacking layers and silicon (si) layers, can obtain 67.5% reflectance under normal incidence, in the wavelength region near the wavelength of 3ηι, if the use of M04200416496 layer and wrinkle ( The Mo / Be multilayer film formed by alternately laminating Be) layers has a reflectance of 70.2% under normal incidence (for example, refer to Non-Patent Document 2).
ElJV曝光裝置，主要係由EUV光源、照明光學系統、 光草载台、投影成像光學系統、晶圓載台等所構成。Ευν 光源’可使用雷射電漿光源、放電電漿光源或放射光等。 照明光學系統，係由使自斜方向入射到反射面的EUV光反 射的斜入射鏡、反射面係由多層膜所形成的多層膜反射鏡 、及只讓既定波長的光透過的濾光片等所構成，對光罩上 、所要的波長之EUV光照明。又，如前述般，由於在guy 光的波長域沒有透明物質的存在，故光罩不使用習知的透 過型的光罩而可使用反射型的光罩。形成於光罩上的電路 圖案，藉由由複數個多層膜反射鏡等所構成之投影成像光 學系統，可在塗布有光阻的晶圓上成像而轉印到該光阻上 。又，由於EUV光會受到大氣吸收而衰減，故其光路係完 全維持於既定的真空度（例如，1 X l〇-3Pa以下）。 投影成像光學系統係由複數片多層膜反射鏡所構成。 由於夕層膜反射鏡的反射率並非故為了抑制光量的 損失，反射鏡的片數以儘量少為佳。迄今被提出的報告有 由4片的多層膜反射鏡所構成的光學系統（例如，參照專 利文獻1、2)、或由6片的多層膜反射鏡所構成的光學系 統（例如，專利文獻3、4)等。異於光束依一個方向進行的 折射光學系統，於反射光學系統中，由於光學系統中之光 束係來回行進，故為了避免因反射鏡導致的光束遮蔽，而 難以使數值孔徑（NA)作成為較大。於4片之光學系統中， 200416496The ElJV exposure device is mainly composed of an EUV light source, an illumination optical system, a light grass stage, a projection imaging optical system, and a wafer stage. The Ευν light source can be a laser plasma light source, a discharge plasma light source, or radiated light. Illumination optical systems are oblique incidence mirrors that reflect EUV light incident on the reflective surface from an oblique direction, multilayer mirrors whose reflective surfaces are multilayer films, and filters that allow only light of a predetermined wavelength to pass through. The structure illuminates EUV light of a desired wavelength on the photomask. In addition, as described above, since there is no transparent substance in the wavelength region of the guy light, the mask can be a reflective mask instead of a conventional transmission mask. The circuit pattern formed on the photomask can be transferred onto the photoresist by imaging on a photoresist-coated wafer through a projection imaging optical system composed of a plurality of multilayer film reflectors and the like. In addition, since EUV light is attenuated by atmospheric absorption, its optical path system is completely maintained at a predetermined vacuum degree (for example, 1 X 10-3 Pa or less). The projection imaging optical system is composed of a plurality of multilayer film mirrors. Since the reflectance of the lamella mirror is not for the purpose of suppressing the loss of light, the number of mirrors is preferably as small as possible. An optical system made up of four multilayer film mirrors (for example, refer to Patent Documents 1 and 2) or an optical system made up of six multilayer film mirrors (for example, Patent Document 3) have been reported so far. , 4) and so on. Different from the refractive optical system in which the light beam travels in one direction, in the reflective optical system, since the light beam in the optical system travels back and forth, it is difficult to make the numerical aperture (NA) relatively small in order to avoid the shielding of the beam caused by the mirror. Big. In a 4-piece optical system, 200416496
ΝΑ只能達到〇· 15的程度，而於6片之光學系統中，則可 設計成ΝΑ為更大的光學系統。為了使光罩載台與晶圓载 台配置於投影成像光學系統的兩側，反射鏡的片數通常為 偶數。如此之投影成像光學系統，由於必須在有限的面數 下修正光學系統的像差，故成為各反射鏡須使用非球面开) 狀、且只在既定的像高附近修正像差之環場（ring f ield) 光學系統。為使光罩上的圖案全體轉印到晶圓上，須使光 罩載台與晶圓載台以依光學系統的倍率而異之速产邊^ ^ 邊進行曝光。 (專利文獻1) 美國專利第531 5629號說明書 (專利文獻2 ) 美國專利第5063586號說明書 (專利文獻3 ) 曰本專利特開平09-21 1332號公報 (專利文獻4)NA can only reach the level of 0.15, and in the 6-piece optical system, NA can be designed as a larger optical system. In order to arrange the mask stage and the wafer stage on both sides of the projection imaging optical system, the number of mirrors is usually an even number. In such a projection imaging optical system, since the aberrations of the optical system must be corrected under a limited number of faces, each mirror must use an aspherical surface), and the ring field (such as the correction of aberrations only around a predetermined image height) ring f ield) optical system. In order to transfer the entire pattern on the photomask to the wafer, the photomask stage and the wafer stage must be exposed at a rapid production rate ^ ^ depending on the magnification of the optical system. (Patent Document 1) U.S. Patent No. 531 5629 (Patent Document 2) U.S. Patent No. 5063586 (Patent Document 3) Japanese Patent Publication No. 09-21 1332 (Patent Document 4)
美國專利第581531 0號說明書 (非專利文獻1) 1995 年，第 2437 D· Tichenor，et al.， 「SPIE」 卷，P.292 (非專利文獻2) 1 998 年， C· Montcalm, 「Proceedings of SPIE」 第 3331 卷，ρ· 42 【發明内容】 7 =而’在這樣的膽曝光裝置内，為了防止 =區域的光衰減而保持於真空狀態。 先:皮 作成為完…的狀< 故曝光裝置内並無法 :如，起因於用於真空排氣系統(真空泵)的油料= 零件（例如電纜線的被覆材料等 线用的 “、 号^寻起因於此等機槿糸姑 :留乳體量’藉由選擇於真空下氣體放出極少的材料、 巧予2分的時間進行排氣等，可降低到一定的程度。 於則述之起因於機構系統的殘留氣體之外，作為含右 烴類的殘留氣體有自晶圓上的光阻揮發者。將塗布有光阻 ^曰曰科入曝光裝置中，對其進行㈣光照射之場合，殘 畕的’:七瘵發’構成光阻的樹脂亦會分解脫離。因此， 含有烴類的氣體會放出到裝置内。因此，晶圓的處理片數 ^曝光處理之晶圓的片數）愈增多，自晶圓放出的氣體量亦 增加。且，含有該烴類的殘留氣體分子，會物理性地吸附 於裝置内的多層膜反射鏡的表面。 物理性地吸附於多層膜反射鏡的表面之殘留氣體分子 二反覆地進行脫離與吸附，而不會以其原來狀態直接成長 又厚但，右對多層膜反射鏡照射EUV光，則於反射鏡的 基板内邛會產生二次電子，此二次電子會將吸附於表面的 a有4類之殘留氣體分子分解而析出碳。如此般，由於吸 附的氣體分子會漸漸被分解而析出，而會在多層膜反射鏡 的表面形成碳層，此碳層的厚度，係與EUV光的照射量成 200416496 比例地增加（參照 κ· Boller et al·，Nucl. Instr And ㈣· V〇1.208, ρ·273 ( 1 983))。 如此般’在多層膜反射鏡的表面形成碳層，則會產生 反射鏡的反射率降低的問題。 圖4為顯示在多層膜反射鏡的表面形成碳層時的反射 率之影響的曲線圖。具體而言，係表示對M〇/Si多層膜反 射鏡（層數45對層，週期長6· 9nm，膜厚比膜厚/週期 長）1/3，隶上層為si)以波長13· 5nm的EUV光以正入射照 射日守因在表面上形成碳層導致之反射率的變化（計算值）之 曲線圖。圖4中’橫坐標為碳層的厚度（nm)，縱坐標為反 射率（/〇。如圖4所示般，碳層的厚度為2nm以下時，反射 率不會降低，而若超過2nm，則反射率會逐漸降低，於6nm 時則反射率會降低達6%以上。 又，形成於多層膜反射鏡的表面之碳層的厚度為2nm 以下的場合’反射率不會降低的理由，係由於附著於多層 膜反射鏡的表面之碳層的光學常數接近於用以構成多層膜 的重原子層（Mo層）的光學常數，故碳層可發揮與多層膜的 重原子層相同的作用。 於EUV曝光裝置中，即使是多層膜反射鏡的反射率之 些微的降低，亦會對曝光裝置的透過量產生非常不良的影 響。圖5為顯示因多層膜反射鏡的反射率之降低對透過量 的影響之曲線圖。具體而言，係假想實際的EUV曝光裝置 ，於使用6片的照明系統、1片的反射光罩、6片的投影系 統之合計為13片的多層膜反射鏡的系統中，就—片的多 200416496 層膜反射鏡之反射率的降低之對於光學系統的透射率（透 過量）有多大程度的影響進行計算的結果而表示的圖。惟 ’ △ R=0的點’為多層膜反射鏡1片的反射率為67%，以此 狀況作為基準而進行規格化。如圖5所示般，例如，多層 膜反射鏡1片的反射率降低若為6%，則光學系統全體的透 射率會降低到原來的值之3〇%的程度。 又，若只在多層膜反射鏡的一部份析出碳層，由於該 部分的反射率會局部性地降低，故光學系統的成像特性會 變差。 曰 本發明係鑑於如此般的問題點而成者，其目的係提供 •可抑制自塗布有光阻的晶圓之氣體放出的EUV曝光方法 及EUV曝光裝置。 為了解決上述問題，本發明之EUV曝光方法，係使用 EUV光，使形成於光罩上的圖案曝光到晶圓上；其特徵在 於，在晶圓上形成所要的光阻層之後，在該光阻層上面成 膜由無機材料所構成之氣體放出防止層而形成基板，在該 基板上進行曝光。 於習知的曝光裝置中，會附著於光學系統上而造成問 題者，主要為自晶圓上的光阻所放出的氣體。依本發明， 係先在光阻上進行由無機材料所構成的氣體放出防止層之 成膜，再進行曝光。藉由自該氣體放出防止層本身不會放 出氣體而將下層的光阻層被覆，可抑制自光阻層的氣體放 出因此，起因於放出氣體之污染膜（附著於光學系統各 部份的污物）的形成速度會變慢，而可長時間進行穩定的 10 416496 曝光。 又，本發明之EUV曝亦古^ ^ 曝先方法，使用EUV光，使形成於 先罩上的圖案曝光到晶圓上· 圆上，其特徵在於，在晶圓上形成 所要的光阻層之後，在兮伞a， Μ光阻層上面成膜以石夕作為主成份 的物質所構成之氣體放出 Γ々工層而形成基板，在該基板上 ^ 。 依本毛明，係先在光阻上進行以石夕作為主成份之物質 所構成的氣體放出防止層之成膜，再進行曝光。由於石夕可 讓㈣光有效率地透過，可在對曝光裝置的透過量沒有大· 的不良影響之下，抑制自光阻層之氣體的放出。 曰於本發明中，於爾曝光中對自前述基板所放出之氣 體里進订測定，將此測定值回授到前述氣體放出防止層之 f膜裝置’藉此來調整前述氣體放出防止層的厚度為佳。 2此可確實地抑制自光阻層之氣體的放出。又，以求出 前述氣體放出防止岸. . ^ «的；度，依據此厚度來調整曝光時間 為佳。藉此，可使光罩圖案正確地轉印到晶圓上。 本發明之EUV曝光裝置，係使用膽光，使形成於光φ 罩上之圖案曝光到塗布有光阻的晶圓上者·其特徵在於， 具備： 氣體放出防止層成膜部，係用以在該光阻上面進行氣 體放出防止層之成膜；及 二曝光部，係具有照明光學系統及投影成像光學系統； 該照明光學系統’係以EUV光對該光罩進行照明·該投影 成像光予系統，係用來使被該光罩反射之EUV光投影成像 11 到成膜該氣體放出防止層之基板上。 依本發明，具有氣體放出防止層成膜部，並於在光阻 進行由無機材料所構成之氣體放出防止層之成膜之後再 =行曝光。自此氣體放出防止層本身不會放出氣體並 層的光阻層被覆，藉此，可抑制自光阻層的氣體放出。因 此，起因於放出氣體之污染膜（附著於光學系統各部份的 巧物)的形成速度會變慢，而可長時間進行穩定的曝光。 於本發明中，以更進-步具備用以除去該氣體放出防 士層的氣體放出防止層除去部為佳。藉此，光阻層可成為 露出於表面的狀態，而可容易地進行顯影。 又於本發明中，更進一步具有用以測定自前述基板 所放出之氣體量之氣體測定器’或用以求出前述氣體放出 防止層的厚度之膜厚測定部為佳。並以藉由前述氣體測定 器的輸出來控制前述氣體放出防止層成膜冑 放出防止層的厚度為佳。 ^ 又，本發明之EUV曝光裝置，係使用Εϋν光，使形成 於光罩上之圖案曝光到塗布有光阻的晶圓上者；其特徵在 於，係具備： 氣體放出防止層成膜部，係用以在該光阻上面進行氣 體放出防止層之成膜；及 曝光部，係具有照明光學系統及投影成像光學系統； 該照明光學系統，係以EUV光對該光罩進行照明；該投影 成像光學系統，係用來使被該光罩反射之EUV光投影成像 到成膜該氣體放出防止層之基板上； 12 200416496 並進一步對應於該氣體放出防止層的厚度，而調整該 基板於EUV曝光時的曝光量。 本發明之曝光基板，其特徵在於，於晶圓上形成光阻 層’並於其上形成由無機材料所構成之氣體放出防止層。 又’本發明之曝光基板，其特徵在於，於晶圓上形成 光阻層，並於其上形成由以矽作為主成份的物質所構成之 氣體放出防止層。 【實施方式】 以下’參照圖式來加以說明。 _ 圖1為表示以本發明之實施形態之EUV曝光裝置進行 曝光之感光基板的概略截面圖。於晶圓3上形成光阻層2 ，且在其上成膜氣體放出防止層丨。欲形成如此的感光基 板4，首先，使用光阻塗布裝置在晶圓3上塗布光阻之後 ，使其乾燥而形成光阻層2。接著，利用濺鍍法在光阻層 2上成膜氣體放出防止層卜為了有效地抑制自光阻層2的 氣體之放出，氣體放出防止層】的厚度以lnm以上為佳。 此處，氣體放出防止層必須是可滿足若干的條件者方⑩ 可使用。首先，於對感光基板照射EUV光的場合，自此氣 體放出防止層t放出烴類等之有機物系的氣體者並不佳， 較佳係氣體放出防止層以由無機材料所構成。 又，氣體放出防止層對EUV光的吸收以抑制於最低限 度為佳，尤以由石夕（叫、训、3从、抓、氫化非晶質石夕 (以CVD等製作之含有多量的氫之石夕）等之以料為主成份 的物貝所構成之氣體放出防止層為特佳。目2為表示對波 13 200416496 長U.4— EUV光之石夕的透射率之曲線圖。圖2中，橫轴 為石夕層的厚度㈤，縱軸為透射率(%)。如圖2所示般，石夕 層的厚度若增加，則透射率會徐徐地降低，♦層的厚度若 為3〇nm以下’可得到95%以上的透射率。由於在進行曝光 之時，以將謝光的吸收抑制於5%以下為佳，故由石夕所構 成之氣體放出防止層的厚度以3〇nm以下為佳。 又，氣體放出防止層卜並非必須將光阻層2完全被 覆0自光阻層2所放出之翕辦旦山士人〆μ 礼體里由於係與光阻層2的露出 面積成比例，故只要將光阻層2的大部分的面積（95%)被覆 ，即使露出-部份，亦可有效地抑制氣體之放出。 藉由使用經進行氣體放出防止層i之成膜的感光基板 4來進行曝光，可有效地抑制自綠層2的氣體之放出。 為了於曝光之後使下層的光阻層2顯影，於顯影製程 前必須將氣體放出防止I 1除去。氣體放出防止層i之除 去’可利用例如使用含有敗的氣體之工加 Εί—·反應型離子姓刻）。又，藉由在將氣體放出防止層 1除去之後使用顯影裝f進行光阻層2㈣影，可得到光 阻圖案。 其次，就本發明之實施形態之曝光裝置，參照圖3來 加以說明。 圖3為表不本發明之實施形態之Εϋν曝光裝置的全體 構成之圖。m曝光裝f _，主要係具備··光阻塗布部 ίο、氣體放出防止層成膜部丨卜曝光部13、氣體放出防止 層除去α卩14、光阻顯影部丨5等。以下，就使用E㈣曝光 14 裝置100使形成於光罩上的圖案曝光到晶圓上的加以 說明。 首先，將晶圓3導人光阻塗布部1G。於光阻塗布部1〇 、’精由在大氣中以旋轉塗布將纽塗布到晶圓3上後，加 以乾燥而形成光阻層2。 ,著k布有光阻層2的晶圓3，藉由移送機構21移 =氣體放纽止層成膜部u。在此氣體放出防止層成膜 …藉由在真工中使用氬氣的濺鍍法，在光阻層2上成 膜為氣體放出防止層卜於以石夕作為氣體放出防止層ι的 材科之場合，可在氣體放出防止層成膜部11的陰極112上 设置成膜材料之石夕製_即可。藉此，可在晶圓3上形 、“層2，而可作成在其上成膜由矽所構成之氣體放出 防止層1的感光基板4。又，氣體放出防止層成膜部u， 在後述之试驗片1U上亦可成膜為氣體放出防止層丄的 構成為佳。 “又，在氣體放出防止層成膜部11形成之感光基板4, 可猎由移^:機構23而移送到曝光部13。此時，以作成為 將感光基4遮蔽使其不暴露於曝光裝置外部的大氣中的 構成為佳在維持真空狀態下將感光基板4自氣體放 出防止層成臈部"移送往曝光部13為佳。藉由使感光基 反4與大氣隔絕，可抑制附著在基板表面之含有有機物的 ⑽的：著量與粒子等之塵埃的量。藉由含有有機物之污 物的附著置之抑制，污染膜(附著於光學系統各部的污物） 的形成會變慢，而可長時間穩定地進行曝光。另一方面， 15 200416496 精由抑制粒子等之污物的附著量，可降低半導體元件的缺 陷，而可使曝光裝置的透過量提高。 曝光部13，主要係具備：EUV光源、照明光學系統 131、光罩載台、投影成像光學系統132、晶圓載台等。 EUV光源，可使用雷射電漿光源、放電電漿光源與放射光 等。照明光學系統131，係具備··使自斜方向入射到反射 面的EUV光反射的斜入射鏡、反射面係由多層膜所形成的 夕層膜反射鏡、及只讓既定波長的光透過的渡光片等，對 光罩133上以所要波長之EUV光照明。又，光罩133為反 射型光罩，係載置於可移動的光罩載台上。於光罩133被 反射的EUV光，藉由以複數片多層膜反射鏡等構成之投影 成像光學系統132，在感光基板4上成像。感光基板4係 載置於可移動的晶圓載台上，藉由使光罩載台與晶圓載台 以依光學系統的倍率而異之速度邊進行掃描邊進行曝光， 可使形成於光罩133上的電路圖案全體轉印到感光基板4 之光阻層2上。如此般，由於係對成膜氣體放出防止層工 的感光基板4進行曝光，故可使曝光中之自光阻層2的氣 體之放出幾乎都抑制於檢測界限以下。又，由於Euv光會 被大氣吸收而衰減，其光路係全部維持於既定的真空度（ 例如，1 X l〇~3Pa以下）。 又，於曝光部13設置有殘留氣體監測器（氣體測定器 )134,用以測定曝光部13内的殘留氣體量。藉由將殘留氣 體量與設定值比較，可檢查氣體放出防止層丨是否有效地 發揮著作用。亦即，殘留氣體量為設定值以下的場合，係 16 200416496 ::體放出防止I !有效地發揮作用。反之，殘留氣體量為 X疋值以上的％ α ’係氣體放出防止I丨未有效地發揮作 用。又’於判斷為氣體放出抑制機能不充分的場合，殘留 氣體量等的資訊會被傳送往氣體放出防止層成膜部η，以 控制使須成膜之氣體放出防止層1的厚度作成更厚。藉由 如此般地測定自基板放出的#，依據此測定值而調整氣體 放出防止層的厚度，可確實地㈣丨自纽層的氣體之放出 糟由移送機構24移iiUS Patent No. 581531 0 (Non-Patent Document 1) 1995, 2437 D. Tichenor, et al., "SPIE" Volume, P.292 (Non-Patent Document 2) 1 998, C. Montcalm, "Proceedings of SPIE "Vol. 3331, ρ · 42 [Summary of the Invention] 7 = And in such a bile exposure device, in order to prevent light attenuation in the area, it is kept in a vacuum state. First: the leather is finished ... so it cannot be used in the exposure device: for example, it is caused by the oil used in the vacuum exhaust system (vacuum pump) = parts (such as the coating material for cable wires, etc.) It is due to these reasons: the amount of retained milk can be reduced to a certain degree by selecting materials that emit very little gas under vacuum, and exhausting for 2 minutes, etc. In addition to the residual gas of the mechanical system, as the residual gas containing right hydrocarbons, there is a photoresist volatilizer from the wafer. When the photoresist is coated in an exposure device, it is subjected to calender irradiation. Residual ': 七 瘵 发' resin that constitutes the photoresist will also decompose and detach. Therefore, the gas containing hydrocarbons will be released into the device. Therefore, the number of wafers processed ^ the number of wafers exposed The more gas is emitted from the wafer, the more the residual gas molecules containing the hydrocarbons are physically adsorbed on the surface of the multilayer film reflector in the device. Physically adsorbed on the multilayer film reflector Residual gas molecules on the surface Detachment and adsorption are performed on the ground, instead of growing directly and thick in its original state. However, when the right side of the multilayer film reflector is irradiated with EUV light, secondary electrons will be generated in the substrate of the mirror. This secondary electron will There are 4 types of residual gas molecules that are adsorbed on the surface to decompose and precipitate carbon. In this way, because the adsorbed gas molecules will be gradually decomposed and precipitated, a carbon layer will be formed on the surface of the multilayer film mirror, and the thickness of this carbon layer , Which increases in proportion to 200416496 with the exposure of EUV light (see κ · Boller et al ·, Nucl. Instr And ㈣ · V〇1.208, ρ · 273 (1 983)). When a carbon layer is formed on the surface, there is a problem that the reflectance of the mirror is reduced. FIG. 4 is a graph showing the influence of the reflectance when a carbon layer is formed on the surface of a multilayer film mirror. / Si multilayer film mirror (45 pairs of layers with a period of 6.9 nm, the film thickness is longer than the film thickness / period) 1/3, the upper layer is si) EUV light with a wavelength of 13.5 nm is irradiated with normal incidence Change in reflectance due to the formation of a carbon layer on the surface (Calculated value). In Figure 4, the abscissa is the thickness of the carbon layer (nm) and the ordinate is the reflectance (/ 0. As shown in Figure 4, when the thickness of the carbon layer is 2 nm or less, the reflectance is It will not decrease, but if it exceeds 2nm, the reflectance will gradually decrease, and at 6nm, the reflectance will decrease by more than 6%. When the thickness of the carbon layer formed on the surface of the multilayer film mirror is 2nm or less' The reason why the reflectance does not decrease is because the optical constant of the carbon layer attached to the surface of the multilayer film mirror is close to the optical constant of the heavy atomic layer (Mo layer) used to form the multilayer film. The heavy atomic layer of the film has the same effect. In the EUV exposure device, even a slight decrease in the reflectance of the multilayer film mirror will have a very bad influence on the transmission of the exposure device. Fig. 5 is a graph showing the influence of the decrease in the reflectance of the multilayer film mirror on the transmittance. Specifically, it is an imaginary actual EUV exposure device. In a system using a 6-piece lighting system, a 1-piece reflective mask, and a 6-piece projection system with a total of 13-piece multilayer film reflectors, 200416496 A graph showing how much the decrease in the reflectance of a layered film mirror affects the transmittance (transmittance) of an optical system. However, the point of "ΔR = 0" is that the reflectance of one sheet of the multi-layer mirror is 67%, and normalization is performed based on this situation. As shown in FIG. 5, for example, if the reflectance of one multilayer film mirror is reduced by 6%, the transmittance of the entire optical system is reduced to about 30% of the original value. In addition, if the carbon layer is deposited only on a part of the multilayer film reflector, the reflectance of that part is locally reduced, so the imaging characteristics of the optical system are deteriorated. The present invention has been made in view of such problems, and its object is to provide an EUV exposure method and an EUV exposure apparatus that can suppress the release of gas from a wafer coated with a photoresist. In order to solve the above problems, the EUV exposure method of the present invention uses EUV light to expose a pattern formed on a photomask to a wafer; it is characterized in that after a desired photoresist layer is formed on the wafer, the light is A gas release prevention layer made of an inorganic material is formed on the resist layer to form a substrate, and exposure is performed on the substrate. In conventional exposure devices, those who attach to the optical system and cause problems are mainly gases released from the photoresist on the wafer. According to the present invention, a film of a gas evolution prevention layer made of an inorganic material is formed on a photoresist before exposure. By covering the lower photoresist layer with the gas release preventing layer itself, no gas is emitted, and the gas release from the photoresist layer can be suppressed. Therefore, the contaminated film (fouling attached to each part of the optical system) caused by the gas is emitted. Formation) will slow down, and stable 10 416496 exposures can be made for a long time. In addition, the EUV exposure method of the present invention uses the EUV method to expose the pattern formed on the mask to the wafer and the circle using EUV light, which is characterized in that a desired photoresist layer is formed on the wafer. After that, a film composed of a substance containing Shi Xi as a main component is formed on the umbrella M and the photoresist layer to form a substrate, and a substrate is formed on the substrate. According to Ben Maoming, a film of a gas release prevention layer composed of a substance containing Shi Xi as a main component is first formed on a photoresist, and then exposed. Since Shi Xi can efficiently transmit the light, it is possible to suppress the release of gas from the photoresist layer without adversely affecting the transmission of the exposure device. In the present invention, the measurement is performed on the gas emitted from the substrate during the exposure, and the measured value is fed back to the f-film device of the gas emission prevention layer to adjust the gas emission prevention layer. The thickness is better. 2 This can reliably suppress the release of gas from the photoresist layer. In addition, in order to obtain the above-mentioned gas release prevention shore .. ^ «; degree, it is better to adjust the exposure time based on this thickness. Thereby, the mask pattern can be correctly transferred to the wafer. The EUV exposure device of the present invention uses a bile light to expose a pattern formed on a light φ cover to a wafer coated with a photoresist. It is characterized in that it includes: a gas-emission prevention layer film-forming portion, which is used for A film of a gas release prevention layer is formed on the photoresist; and two exposure sections are provided with an illumination optical system and a projection imaging optical system; the illumination optical system is used to illuminate the mask with EUV light and the projection imaging light The pre-system is used to project the image 11 of the EUV light reflected by the mask onto the substrate on which the gas release prevention layer is formed. According to the present invention, there is provided a film forming portion of the gas evolution preventing layer, and the exposure is performed after the film formation of the gas evolution preventing layer made of an inorganic material in the photoresist. Since the gas evolution preventing layer itself does not emit gas, the photoresist layer is covered with the layer, thereby suppressing gas evolution from the photoresist layer. As a result, the formation rate of the contaminated film (artifacts attached to various parts of the optical system) due to the outgas becomes slow, and stable exposure can be performed for a long time. In the present invention, it is preferable to further include a gas evolution preventing layer removing portion for removing the gas evolution preventing layer. Thereby, the photoresist layer can be exposed on the surface, and development can be easily performed. Also in the present invention, it is preferable to further include a gas measuring device 'for measuring the amount of gas emitted from the substrate or a film thickness measuring section for determining the thickness of the gas releasing prevention layer. It is preferable to control the thickness of the gas release prevention layer by controlling the output of the gas release prevention layer by the output of the gas measuring device. ^ The EUV exposure device of the present invention uses Εϋν light to expose a pattern formed on a photomask to a wafer coated with a photoresist, and is characterized in that it includes: a gas-emission prevention layer film forming section, It is used to form a gas release prevention layer on the photoresist; and the exposure part is provided with an illumination optical system and a projection imaging optical system; the illumination optical system is used to illuminate the mask with EUV light; the projection The imaging optical system is used to project and project the EUV light reflected by the photomask onto the substrate on which the gas release prevention layer is formed; 12 200416496 and further corresponds to the thickness of the gas release prevention layer to adjust the substrate to EUV The amount of exposure during exposure. The exposure substrate of the present invention is characterized in that a photoresist layer 'is formed on a wafer and a gas evolution preventing layer made of an inorganic material is formed thereon. Further, the exposure substrate of the present invention is characterized in that a photoresist layer is formed on a wafer, and a gas evolution preventing layer composed of a substance containing silicon as a main component is formed thereon. [Embodiment] The following description will be made with reference to the drawings. _ Fig. 1 is a schematic cross-sectional view showing a photosensitive substrate exposed by an EUV exposure apparatus according to an embodiment of the present invention. A photoresist layer 2 is formed on the wafer 3, and a gas release prevention layer is formed thereon. To form such a photosensitive substrate 4, first, a photoresist is coated on a wafer 3 using a photoresist coating device, and then dried to form a photoresist layer 2. Next, a gas release prevention layer is formed on the photoresist layer 2 by sputtering. In order to effectively suppress the release of gas from the photoresist layer 2, the thickness of the gas release prevention layer is preferably 1 nm or more. Here, the gas evolution prevention layer must be used only if it satisfies several conditions. First, when the photosensitive substrate is irradiated with EUV light, the gas release prevention layer t emits organic gas such as hydrocarbons from this point is not preferable, and the gas release prevention layer is preferably made of an inorganic material. In addition, it is better that the gas emission prevention layer absorbs EUV light to a minimum to suppress it, especially from Shi Xi (called, training, 3 slaves, grasping, hydrogenated amorphous Shi Xi (made by CVD, etc. containing a large amount of hydrogen) It is particularly preferred that the gas release prevention layer composed of shellfish with materials as the main component is a material. The head 2 is a graph showing the transmittance of the wave of Shi Xi on wave 13 200416496 long U.4—EUV light. In Figure 2, the horizontal axis is the thickness of the Shi Xi layer, and the vertical axis is the transmittance (%). As shown in Figure 2, if the thickness of the Shi Xi layer is increased, the transmittance will gradually decrease, and the thickness of the layer If it is 30 nm or less, a transmittance of 95% or more can be obtained. Since it is better to suppress the absorption of Xie light to 5% or less when performing exposure, the thickness of the gas release prevention layer composed of Shi Xi It is preferably below 30 nm. Moreover, it is not necessary to completely cover the photoresist layer 2 with the gas emission prevention layer 0. The photoresist layer released from the photoresist layer 2 μ is in the ceremonial body due to the photoresist layer 2 is proportional to the exposed area, so as long as the most area (95%) of the photoresist layer 2 is covered, Effectively suppress outgassing. By performing exposure using the photosensitive substrate 4 through which the gas evolution preventing layer i is formed, it is possible to effectively suppress outgassing from the green layer 2. In order to make the lower layer photoresist after exposure For layer 2 development, the gas evolution prevention layer I 1 must be removed before the development process. The gas evolution prevention layer i can be removed by using, for example, a process using a gas containing a failed gas. In addition, the photoresist layer 2 is shadowed using a developing device f after the gas evolution preventing layer 1 is removed to obtain a photoresist pattern. Next, an exposure apparatus according to an embodiment of the present invention will be described with reference to Fig. 3. Fig. 3 is a diagram showing the overall configuration of an Eϋν exposure apparatus according to an embodiment of the present invention. The m exposure device f _ is mainly provided with a photoresist coating section, a gas release prevention layer film formation section, an exposure section 13, a gas release prevention layer removal α 卩 14, a photoresist development section, and the like. In the following, a pattern formed on a photomask is exposed on a wafer using the E㈣ exposure device 14. First, the wafer 3 is guided into the photoresist coating portion 1G. In the photoresist coating section 10, the spin coat was applied to the wafer 3 by spin coating in the atmosphere, and then dried to form a photoresist layer 2. The wafer 3 with the photoresist layer 2 disposed thereon is moved by the transfer mechanism 21 to the film formation portion u of the gas release stop layer. Here, the gas release prevention layer is formed into a film ... By using the argon sputtering method in the actual process, a film is formed on the photoresist layer 2 as a gas release prevention layer. The material is made of Shi Xi as the gas release prevention layer. In this case, it is sufficient to provide a film-forming material made of Ishiba on the cathode 112 of the gas evolution prevention layer film-forming portion 11. Thereby, a "layer 2" can be formed on the wafer 3, and a photosensitive substrate 4 on which a gas release prevention layer 1 made of silicon is formed can be formed. In addition, the gas release prevention layer film formation portion u, The later-described test piece 1U can also be formed into a gas release prevention layer 防止. "The photosensitive substrate 4 formed in the gas release prevention layer film-forming portion 11 can be transferred by the transfer mechanism 23 Go to the exposure section 13. At this time, it is preferable that the photosensitive substrate 4 is shielded from being exposed to the atmosphere outside the exposure device. The photosensitive substrate 4 is formed from the gas release prevention layer forming portion " transferred to the exposure portion 13 while maintaining the vacuum state. Better. By isolating the photoreceptor substrate 4 from the atmosphere, it is possible to suppress the amount of tritium containing organic matter attached to the substrate surface: the amount of dust and the amount of dust such as particles. By suppressing the adhesion of contaminants containing organic matter, the formation of a contaminated film (dirt attached to each part of the optical system) is slowed, and exposure can be performed stably for a long time. On the other hand, 15 200416496 suppresses the amount of dirt attached to particles and the like, which can reduce defects in semiconductor devices and increase the transmission of the exposure device. The exposure unit 13 mainly includes an EUV light source, an illumination optical system 131, a mask stage, a projection imaging optical system 132, and a wafer stage. EUV light source can be laser plasma light source, discharge plasma light source and radiant light. The illumination optical system 131 is provided with an oblique incidence mirror that reflects EUV light incident on a reflecting surface from an oblique direction, a laminar-layer reflecting mirror formed of a multilayer film, and a light transmitting unit that transmits only light of a predetermined wavelength. The light-shielding sheet 133 illuminates the mask 133 with EUV light having a desired wavelength. The photomask 133 is a reflective photomask and is mounted on a movable photomask stage. The EUV light reflected on the mask 133 is imaged on the photosensitive substrate 4 by a projection imaging optical system 132 composed of a plurality of multilayer film reflectors and the like. The photosensitive substrate 4 is placed on a movable wafer stage, and the mask stage and the wafer stage are exposed while scanning at a speed that varies depending on the magnification of the optical system, thereby forming the mask 133. The entire circuit pattern is transferred onto the photoresist layer 2 of the photosensitive substrate 4. In this manner, since the photosensitive substrate 4 is exposed to the layer-forming gas release prevention layer, the gas release from the photoresist layer 2 during the exposure can be suppressed almost below the detection limit. In addition, since Euv light is absorbed and attenuated by the atmosphere, all of its optical path systems are maintained at a predetermined degree of vacuum (for example, 1 X 10 to 3 Pa or less). Further, a residual gas monitor (gas measuring device) 134 is provided in the exposure section 13 to measure the amount of residual gas in the exposure section 13. By comparing the amount of residual gas with the set value, it is possible to check whether the gas evolution preventing layer 丨 effectively functions. That is, when the amount of residual gas is equal to or less than the set value, the system 16 200416496 :: Body emission prevention I! Effectively functions. On the other hand, the% α '-type gas release prevention amount of the residual gas amount equal to or more than the X 疋 value is not effective. When it is judged that the gas emission suppression function is insufficient, information such as the amount of residual gas is transmitted to the film formation portion η of the gas emission prevention layer to control the thickness of the gas emission prevention layer 1 to be formed thicker. . By measuring the # emitted from the substrate in this way, and adjusting the thickness of the gas release prevention layer based on the measured value, it is possible to reliably release the gas from the button layer.
其次’完成曝光的感光基板Secondly, the exposed photosensitive substrate
到配置於曝光部13的下游側之氣體放出防止層除去部ι 。此時，以在維持真空狀態下將感織板4自曝光部⑴ 送往氣體放出防止層除去部14為佳。藉由使完成曝光ό 感光基板4亦與大氣隔絕，可更進—步㈣基板表面^ 粒子等之塵埃的附著，可使曝光裝置的透過量更加提高£ 又，藉由使氣體放出防止層的成膜、曝光、去除的製程名 真空中-貫地施行，製程管理變得容易，&率亦可提高。 ，氣體放出防止層除去㈣，藉由在真空中使用含有氟纪 =體之RIE’可將感光基板4的氣體放出防止| !除去。 藉此光阻層2會成為露出於表面的狀態而可進行顯影。 —為使此光阻層2進行顯影，將具有光阻層2的晶圓〔 猎由移送機構25移送到光阻顯影部15。於光阻顯影部η ’在大氣中使光阻顯影液滴下到光阻& 2上，進行光阻層 2的顯影。如此做法，可得到所要的光阻圖案。 曰 於圖3所示之Euv曝光裝置1〇"，對成臈著氣體放 17 200416496 出防止層1的晶圓進行曝光。因 層1之EUV光的吸收等以产富、孔體放出防止 因+ 4以精汝地進行曝光量的管理為佳。 因此，於EUV曝光裝置1〇〇 ’ °又置有用以測定反射率、 ^成膜之氣體放心止層的厚度之反射率敎部（膜厚 測疋部）1 2為佳。圖3中，於氣 、 μ _ 、礼體放出防止層成膜部11的 方設置有反射率測定部12。 氣體放出防止層成膜u，於在晶圓3的光阻層2上 進;^體放出防止層1之成臈的同時，亦對試驗片⑴進 行氧體放出防止層]夕#赠 + 产 增1之成膜。此時，於試驗片111上成膜The gas release preventing layer removing portion ι disposed on the downstream side of the exposure portion 13. At this time, it is preferable to send the woven fabric 4 from the exposure portion 往 to the gas release preventing layer removing portion 14 while maintaining the vacuum state. By completing the exposure, the photosensitive substrate 4 is also isolated from the atmosphere, which can be further advanced—the adhesion of dust on the substrate surface ^ particles and the like can increase the transmission of the exposure device. Moreover, by making the gas release prevention layer The process names of film formation, exposure, and removal are performed in a vacuum-consistently, and process management becomes easy, and the & rate can be increased. The gas evolution preventing layer is removed, and the gas evolution prevention of the photosensitive substrate 4 can be removed by using RIE 'containing fluorine-based materials in a vacuum. As a result, the photoresist layer 2 is exposed to the surface and development can be performed. -In order to develop the photoresist layer 2, a wafer having the photoresist layer 2 is transferred to the photoresist developing section 15 by a transfer mechanism 25. In the photoresist developing section η ', a photoresist developing solution is dropped onto the photoresist & 2 in the atmosphere, and development of the photoresist layer 2 is performed. In this way, a desired photoresist pattern can be obtained. The Euv exposure device 10 shown in FIG. 3 "exposes a wafer formed with a gas release 17 200416496 out of the prevention layer 1. Because of the absorption of EUV light in layer 1, it is better to prevent the production of wealth and prevent the hole from being released. + 4 It is better to manage the exposure amount carefully. Therefore, it is preferable that the reflectance section (film thickness measuring section) 12 for measuring the reflectance and the thickness of the gas-relief stop layer of the film to be formed in the EUV exposure device 100 ′ ° is preferably set. In Fig. 3, a reflectance measuring unit 12 is provided in the vicinity of the gas-generating, film-preventing-layer-preventing-layer forming portion 11 of the gas. The gas release prevention layer is formed into a film on the photoresist layer 2 of the wafer 3; at the same time as the formation of the body release prevention layer 1, the test piece is also provided with an oxygen release prevention layer] 夕 # # + 产Add 1 to form a film. At this time, a film was formed on the test piece 111
之氣體放出防止層的厚度，係與成膜於晶圓3之光阻層2 上之乳體放出防止層1的厚度相同。此處，試驗片U1為 例如經測定反射率的多層膜反射鏡。成膜氣體放出防止層 之5式驗片⑴，藉由移送機構以移送往反射率測定部12。 於反射率測定部12,使用測定用EUV光源121與EUV + J疋式驗片111之反射率。測定用Ευν光源 ⑵，可使用以下方式的光源1 Nd:YAG雷射聚光並照射 到二氧化碳乾材所產生的線光譜，藉由經窄帶化之The thickness of the gas release preventing layer is the same as the thickness of the milk release preventing layer 1 formed on the photoresist layer 2 of the wafer 3. Here, the test piece U1 is, for example, a multilayer film mirror having a measured reflectance. The type 5 test piece ⑴ of the film-forming gas release preventing layer is transferred to the reflectance measuring section 12 by a transfer mechanism. In the reflectance measurement section 12, the reflectance of the EUV light source 121 for measurement and the EUV + J-type test piece 111 is used. The υυν light source can be measured by using the following light source 1 Nd: YAG laser to focus and irradiate the linear spectrum generated by the dry carbon dioxide material.
Mosl2/sl多層膜只取出13nm㈣（參照曰本專利特開 200卜272358號公報）等。又，m檢測$ 122，可使用猜 用的光-極體。此外，亦可使用微通道板⑻⑽Channei Plate)或光倍增器（Ph〇t〇 MulUplier)等。將測得之試驗 片111曰的反射率與預先求出的反射率作比較，求出反射率 的降低里並求出成膜之氣體放出防止層1的厚度。並自 反射率測定部12將反射率的降低量、成膜之氣體放出防 18 200416496 止層1的厚度等資訊傳送到曝光部13。曝光部13則依據 此貝汛進行曝光置的控制（例如，曝光時間的控制）。如此 般」求出氣體放出防止層的厚度，依據此厚度作曝光時間 ^周整，並考慮氣體放出防止層！之謂光的吸收等而精 密地進仃曝光罝的管理，藉此，可正確地將光罩圖案轉 到晶圓上。 藉由使用如此的，曝光裝置100，對成膜著氣體放 出防止層1的感光基板4進行曝光，可使曝光中之自光阻 層2的氣體之放出抑制於檢測界限以下。 以上，係就本發明之實施形態之EUV曝光方法及Euv 曝光裝置加以說明，惟，本發明並非限定於此，加以各種 的變化是可能的。 又，在上述的實施形態中，係於膽曝光裝置中組裝 有氣體放出防止層成膜部、氣體放出防止層除去部，惟， 此等氣體放出防止層成膜部、氣體放出防止層除去部亦可 作成為獨立於m曝光裝置之外的裝置。於該場合，係使 2者^體放出防止層的感光基板藉纟爾曝光裝置進行 Μ ’將完成曝光量的感光基板自 :體::氣體放出防止層除去。氣體放出防止層成膜Γ ^體放出防止層除去部，具有上述的構成與作用者皆可使 於氣體放出防止層成膜部作成為獨立於請曝光 的穷U於希望對應於氣體放出肖止 EUV曝光梦罟的捽r 曰"子度果控制 虞置的清形，只要作成為使以前述方法測定之氣 19 200416496 體放出防止層的厚度作為附屬於感光基板的資訊供應到 EUV曝光裝置的控制裝置的方式即可。 (發明之效果） 如上述所說明般，使用本發明之EUV曝光方法及EUV +光扃置由於係對成膜氣體放出防止層的基板進行曝光 ，故可抑制自光阻層之氣體的放出至幾乎都在檢測界限以 下。因此，即使於進行長時間的曝光的場合，構成光學系 統之夕層膜反射鏡等的表面變得不易形成碳層，而可防止 反射率之降低。其結果，可使曝光裝置的透過量提高，並馨 可抑制光學系統的成像特性之變差。 【圖式簡單說明】 (一）圖式部分 圖1為表示以本發明之實施形態之EUV曝光裝置進行 曝光的感光基板之概略截面圖。 圖2為表示對波長13· 4nm的EUV光之矽的透射率之曲 線圖。 圖3為本發明之實施形態之EUv曝光裝置的全體構成籲 之圖。 圖4為表示在多層膜反射鏡的表面形成碳層時的反射 率之影響的曲線圖。 圖5為表示因多層膜反射鏡的反射率之降低對透過量 的影響之曲線圖。 (二）元件代表符號 1 氣體放出防止層 20 200416496 2 光阻層 3 晶圓 4 感光基板 10 光阻塗布部 11 氣體放出防止層成膜部 12 反射率測定部 13 曝光部 14 氣體放出防止層除去部 15光阻顯影部 ® 21、22、23、24、25 移送機構 100 EUV曝光裝置 111 試驗片 112 陰極 121 測定用EUV光源 122 EUV檢測器 131 照明光學系統 132投影成像光學系統 β 133 光罩 134 殘留氣體監測器 21Mosl2 / sl multilayer films only take out 13nm ㈣ (refer to Japanese Patent Laid-Open No. 200 Bu 272358) and the like. Also, for m detection of $ 122, a photo-polar body can be used. Alternatively, a microchannel plate (Channei Plate), a photomultiplier (Photo MulUplier), or the like can be used. The measured reflectance of the test piece 111 is compared with the previously obtained reflectance, the decrease in the reflectance is calculated, and the thickness of the film-forming gas evolution preventing layer 1 is determined. From the reflectance measurement unit 12, information such as the amount of decrease in reflectance, the film-forming gas release prevention layer, and the thickness of the stop layer 1 are transmitted to the exposure unit 13. The exposure unit 13 performs exposure setting control (for example, exposure time control) based on this. This way "find out the thickness of the gas evolution prevention layer, and use this thickness as the exposure time ^ week round, and consider the gas evolution prevention layer! This means that the light absorption and the like are precisely managed for exposure, so that the mask pattern can be accurately transferred to the wafer. By using the exposure device 100 as described above, the photosensitive substrate 4 on which the gas release prevention layer 1 is deposited is exposed, and the release of gas from the photoresist layer 2 during the exposure can be suppressed below the detection limit. The EUV exposure method and Euv exposure apparatus according to the embodiments of the present invention have been described above, but the present invention is not limited to this, and various changes are possible. Moreover, in the above-mentioned embodiment, the gas emission prevention layer film formation portion and the gas emission prevention layer removal portion are incorporated in the bile exposure device, but the gas emission prevention layer film formation portion and the gas emission prevention layer removal portion are assembled. It can also be used as a device independent of the m exposure device. In this case, the photosensitive substrate of the two-body release prevention layer is subjected to M ′ by a helium exposure device to remove the photosensitive substrate whose exposure has been completed from the: body :: gas release prevention layer. The gas release prevention layer film formation Γ ^ body release prevention layer removal section, with the above-mentioned structure and effect, can make the gas release prevention layer film formation section independent of the poor exposure, please wish to respond to the gas release UVr of the EUV exposure nightmare " Ziduoguo controls the clear shape, as long as the thickness of the gas emission prevention layer 19 200416496 measured by the aforementioned method is supplied to the EUV exposure device as the information attached to the photosensitive substrate Way to control the device. (Effects of the Invention) As described above, since the EUV exposure method and EUV + photolithography of the present invention are used to expose the substrate of the film-forming gas release prevention layer, the release of gas from the photoresist layer can be suppressed. It is almost always below the detection limit. Therefore, even in a case where exposure is performed for a long period of time, it is difficult to form a carbon layer on the surface of the layer film reflector and the like constituting the optical system, and it is possible to prevent a decrease in the reflectance. As a result, the transmission amount of the exposure device can be increased, and deterioration of the imaging characteristics of the optical system can be suppressed. [Brief Description of the Drawings] (I) Drawings Figure 1 is a schematic cross-sectional view showing a photosensitive substrate exposed by an EUV exposure apparatus according to an embodiment of the present invention. Fig. 2 is a graph showing the transmittance of silicon to EUV light having a wavelength of 13.4 nm. Fig. 3 is a diagram showing the overall configuration of an EUv exposure apparatus according to an embodiment of the present invention. Fig. 4 is a graph showing the influence of reflectance when a carbon layer is formed on the surface of a multilayer film mirror. Fig. 5 is a graph showing the influence of the decrease in the reflectance of the multilayer film mirror on the transmittance. (II) Symbols of components 1 Gas emission prevention layer 20 200416496 2 Photoresist layer 3 Wafer 4 Photosensitive substrate 10 Photoresist coating portion 11 Gas emission prevention layer film formation portion 12 Reflectance measurement portion 13 Exposure portion 14 Removal of gas emission prevention layer 15 Photoresist developing unit 21, 22, 23, 24, 25 Transfer mechanism 100 EUV exposure device 111 Test piece 112 Cathode 121 EUV light source for measurement 122 EUV detector 131 Illumination optical system 132 Projection imaging optical system β 133 Mask 134 Residual gas monitor 21
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002334930 | 2002-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200416496A true TW200416496A (en) | 2004-09-01 |
Family
ID=32321744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92132359A TW200416496A (en) | 2002-11-19 | 2003-11-19 | EUV exposure method, EUV exposure apparatus and exposure substrate |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2003284556A1 (en) |
| TW (1) | TW200416496A (en) |
| WO (1) | WO2004047155A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60222849A (en) * | 1984-04-20 | 1985-11-07 | Nec Corp | X-ray exposure method |
| JPS60224223A (en) * | 1984-04-20 | 1985-11-08 | Nec Corp | X-ray exposure method |
| JPH0219850A (en) * | 1988-07-07 | 1990-01-23 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
| JPH02108056A (en) * | 1988-10-17 | 1990-04-19 | Nec Corp | Production of semiconductor device |
| JPH03112121A (en) * | 1989-09-27 | 1991-05-13 | Hitachi Ltd | Exposure system |
-
2003
- 2003-11-18 AU AU2003284556A patent/AU2003284556A1/en not_active Abandoned
- 2003-11-18 WO PCT/JP2003/014620 patent/WO2004047155A1/en not_active Application Discontinuation
- 2003-11-19 TW TW92132359A patent/TW200416496A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003284556A1 (en) | 2004-06-15 |
| WO2004047155A1 (en) | 2004-06-03 |
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