JP2010272677A - Optical element, exposure apparatus, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical element and an exposure apparatus that effectively suppress a non-exposure light spectrum of a light source using a carbon dioxide gas laser as excitation light and excellently maintain imaging performance of each optical element or a wafer and a stage or the like, and a device manufacturing method using them. <P>SOLUTION: An exposure-light reflecting layer (103) reflects exposure light using a carbon dioxide gas laser as excitation light and transmits the excitation light. An excitation-light reflection preventing layer (104) prevents reflection of the excitation light. The exposure-light reflecting layer and the excitation-light reflection preventing layer are laminated in this order from the light-source side on an optical path of the exposure light. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an optical element, an exposure apparatus, and a device manufacturing method.

  In recent years, with the miniaturization of semiconductor integrated circuits, in order to improve the resolution of an optical system achieved by the light diffraction limit, extreme ultraviolet rays (EUV) having shorter wavelengths (for example, 11 to 14 nm) are used instead of conventional ultraviolet rays. : Extreme Ultra Violet) exposure technology has been developed. In an EUV exposure apparatus using such extreme ultraviolet rays (hereinafter referred to as “EUV light”) or the like, a reflecting mirror is used as an optical element for projection or illumination (for example, see Patent Document 1).

  In an exposure apparatus using laser plasma as a light source for generating EUV light, the laser beam used for plasma excitation and the wavelength component not used for exposure (non-exposure light) have the same optical path as the EUV light (exposure light) used for exposure. Thus, there is a problem of reaching each optical element, wafer, stage and the like. Some of the non-exposure light is absorbed by each optical element, wafer, stage, etc., and induces a shape change due to thermal expansion, which adversely affects imaging performance. In particular, in an EUV exposure apparatus, since each optical element is held in a vacuum, heat exchange via gas is not performed, and the temperature rise is more remarkable.

Patent Document 1 discloses an exposure apparatus that excites plasma with YAG laser light (excitation light) having a wavelength of 1064 nm and uses EUV light having a wavelength of 13.5 nm as exposure light. The multilayer film reflecting mirror of Patent Document 1 includes an excitation light reflection preventing film formed on a substrate and an exposure light reflecting film formed thereon. The excitation light antireflection film has a configuration in which a molybdenum (Mo) layer, a silicon oxide (SiO ₂ ) layer, and a silicon (Si) layer are repeatedly stacked in order from the substrate side. The exposure light reflection film has a two-layer structure in which a Mo layer and a Si layer are laminated in order from the substrate side. With this configuration, the excitation light can be absorbed by the excitation light reflection film, and the exposure light can be selectively reflected by the exposure light reflection film, and temperature rise of each optical element, wafer, and stage can be prevented.

JP 2006-216783 A

  However, in Patent Document 1, since the exposure light reflection film itself has a high reflectance over the ultraviolet to infrared wavelength region, for example, it is an effective reflection for a light source that uses a carbon dioxide laser with a wavelength of 10600 nm as excitation light. There is a problem that the prevention effect cannot be obtained.

  Therefore, the present invention effectively suppresses the non-exposure light spectrum of a light source that uses a carbon dioxide laser as excitation light, and can maintain the imaging performance of each optical element, wafer, stage, etc., an optical element, an exposure apparatus, And it aims at providing the manufacturing method of the device using these.

  In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 11 shown in the embodiment. In addition, in order to explain the present invention in an easy-to-understand manner, the description will be made in association with the reference numerals of the drawings showing an embodiment, but the present invention is not limited to the embodiment.

  An optical element (100) according to the present invention includes an exposure light reflecting layer (103) that reflects exposure light using a carbon dioxide laser as excitation light and transmits the excitation light, and excitation light that prevents reflection of the excitation light. An antireflection layer (104) is laminated in this order from the light source (51) side in the optical path of the exposure light.

  An exposure apparatus (10) according to the present invention includes the optical element (100) described above.

  The device manufacturing method according to the present invention is characterized in that exposure is performed on the photosensitive agent on the substrate (WA) on which the photosensitive agent is formed, using the exposure apparatus (10).

  According to the present invention, an optical element, an exposure apparatus, which can effectively suppress the non-exposure light spectrum of a light source using a carbon dioxide laser as excitation light, and can favorably maintain the imaging performance of each optical element, wafer, stage, etc. And the manufacturing method of the device using these can be provided.

1 is a schematic block diagram of an exposure apparatus according to an embodiment of the present invention. Sectional drawing which shows the structure of the optical element which concerns on embodiment of this invention. The graph which shows the relationship between the wavelength of the exposure light which injects into the optical element which concerns on embodiment of this invention, and a reflectance. The graph which shows the relationship between the wavelength of the non-exposure light which injects into the optical element which concerns on embodiment of this invention, and a reflectance. The graph which shows the relationship between the incident angle of the exposure light which injects into the optical element which concerns on embodiment of this invention, and a reflectance. The graph which shows the relationship between the wavelength of the non-exposure light which injects into the optical element which concerns on embodiment of this invention, and a reflectance. The graph which shows the relationship between the wavelength of the exposure light which injects into the conventional optical element, and a reflectance. The graph which shows the relationship between the wavelength of the non-exposure light which injects into the conventional optical element, and a reflectance. Sectional drawing which shows the modification of the optical element which concerns on embodiment of this invention. Sectional drawing which shows the modification of the optical element which concerns on embodiment of this invention. The flowchart which shows an example of the manufacturing process of a semiconductor device.

  FIG. 1 is a view for explaining the arrangement of an exposure apparatus according to an embodiment of the present invention. The exposure apparatus 10 includes, as an optical system, a light source device 50 that generates light source light including EUV light (wavelength 11 to 14 nm) that is exposure light, an illumination optical system 60 that guides the EUV light to an illumination mask MA, And a projection optical system 70 for forming a pattern image of the mask MA on a wafer WA which is a sensitive substrate. Further, the exposure apparatus 10 includes a mask stage 81 that supports the mask MA and a wafer stage 82 that supports the wafer WA as mechanical mechanisms. Note that the wafer WA is obtained by embodying a sensitive substrate and surface-coating a photosensitive layer such as a resist.

  The light source device 50 includes, for example, a laser plasma light source 51 that generates laser light for plasma excitation, and a tube 52 that supplies a gas such as xenon that is a target material into the housing SC. As the laser light that is excitation light, for example, a carbon dioxide laser is used. In the present embodiment, for example, infrared laser light having a wavelength of 10600 nm is used. In addition, a condenser mirror 54 and a collimator mirror 55 are attached to the light source device 50. In the light source device 50, by condensing the laser light from the laser plasma light source 51 to xenon emitted from the tip of the tube 52, the target material in that portion is converted into plasma and EUV light is generated. The condenser mirror 54 collects EUV light generated at the tip S of the tube 52. The EUV light that has passed through the condenser mirror 54 exits the casing SC while being converged, and enters the collimator mirror 55. Instead of the light source light from the laser plasma type light source device 50 as described above, light source light from a discharge plasma light source, radiation light from a synchrotron radiation light source, or the like can be used.

  The illumination optical system 60 includes reflection type optical integrators 61 and 62, a condenser mirror 63, a bending mirror 64, and the like. In the illumination optical system 60, the light source light from the light source device 50 is condensed by the condenser mirror 63 while being uniformed as illumination light by the optical integrators 61 and 62 including a large number of small mirrors, and is passed through the bending mirror 64. The light is incident on a predetermined area (for example, a belt-shaped area) on the mask MA. Thereby, a predetermined area on the mask MA can be uniformly illuminated by EUV light having an appropriate wavelength.

  Note that there is no substance having sufficient transmittance in the EUV light wavelength region, and a reflective mask, that is, a patterned mirror is used as the mask MA instead of a transmissive mask.

  The projection optical system 70 is a reduction projection system including a large number of mirrors 71, 72, 73 and 74. Although FIG. 1 shows a configuration in which four mirrors are arranged, for example, a configuration in which six mirrors are arranged may be used. A circuit pattern, which is a pattern image formed on the mask MA, forms an image on the wafer WA coated with a resist by the projection optical system 70 and is transferred to the resist. In this case, the area onto which the circuit pattern is projected at once is a linear or arcuate slit area, for example, a rectangle formed on the mask MA by scanning exposure in which the mask MA and the wafer WA are moved synchronously. This circuit pattern can be transferred to a rectangular area on the wafer WA without waste.

  The mask stage 81 is configured to support the mask MA and to move to a desired position while precisely monitoring the position and speed of the mask MA under the control of the control device. In addition, the wafer stage 82 is configured to support the wafer WA and to be moved to a desired position while precisely monitoring the position and speed of the wafer WA under the control of the control device.

Of the light source device 50 described above, the portion disposed on the optical path of the EUV light, the illumination optical system 60, and the projection optical system 70 are disposed in the vacuum vessel 84 to prevent the exposure light from being attenuated. Yes. In other words, although EUV light is attenuated is absorbed by the atmosphere, the whole device as well as shielded from the outside by the vacuum chamber 84, a predetermined vacuum degree optical path of the EUV light (for example, 1.3 × ¹⁰ -3 Pa or less) By maintaining this, attenuation of EUV light, that is, reduction in brightness and contrast of the transferred image is prevented.

  The optical elements such as the mirrors 54, 55, 61, 62, 63, 64, 71, 72, 73, 74 and the mask MA arranged on the EUV light path in the vacuum vessel 84 are made of, for example, quartz glass. A multilayer film for reflection is formed on the substrate. The shape of the optical surface of the optical element or the like is typically a concave surface, but is not limited to the concave surface, and is appropriately adjusted depending on the place of incorporation, such as a flat surface, a convex surface, or a multi-surface. In the present embodiment, optical elements such as mirrors 54, 55, 61, 62, 63, 64, 71, 72, 73, 74 and mask MA constituting the optical system of the exposure apparatus 10 are illustrated in FIG. The optical element 100 is used.

FIG. 2 is a cross-sectional view showing the structure of the optical element 100.
The optical element 100 includes a substrate 101 and a multilayer film 102. The substrate 101 is a base material that supports the multilayer structure. The substrate 101 is formed by processing, for example, synthetic quartz glass or low expansion glass, and its upper surface is polished to a mirror surface with a predetermined accuracy.

The multilayer film 102 is a reflective film that is supported on the substrate 101 and reflects EUV light that is exposure light. The multilayer film 102 further includes an EUV reflection block (exposure light reflection layer) 103 and a non-exposure light reflection prevention block (excitation light reflection prevention layer) 104.
The optical element 100 is arranged in the optical path of the exposure light in the exposure apparatus 10 so that the EUV reflection block 103, the non-exposure light reflection preventing block 104, and the substrate 101 are arranged in this order from the laser plasma light source 51 side. Furthermore, it is possible to provide at least one capping layer on the surface of the EUV reflection block 103.

  The EUV reflection block 103 is a multilayer film of several to several hundred layers formed by, for example, alternately laminating two kinds of thin film layers L1 and L2 formed of different materials on the substrate 101. As a material constituting the thin film layers L1 and L2, a material having a different refractive index with respect to EUV light and having an optical characteristic that transmits non-exposure light is selected. Examples of such substances include lithium (Li), carbon (C), oxygen (O), fluorine (F), silicon (Si), phosphorus (P), sulfur (S), chlorine (Cl), and potassium. (K), two or more substances selected from zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), and tellurium (Te) be able to.

  In order to increase the reflectance of the optical element 100, which is a reflecting mirror, the EUV reflection block 103 is formed by laminating a large number of less absorbing materials, and the phase of the reflected wave is within the range of the light incident angle for each position on the reflecting surface. The film thickness distribution is adjusted based on the optical interference theory. That is, for the wavelength region of EUV light used in the projection exposure apparatus, a layer made of a material having a relatively high refractive index is referred to as a thin film layer L1, and a layer made of a material having a relatively low refractive index is referred to as a thin film layer L2. To do. Then, the EUV reflection block 103 is formed by laminating the thin film layers L1 and L2 on the substrate 101 alternately or in an arbitrary order with a predetermined film configuration and film thickness distribution so that the phases of the reflected waves are matched.

In the present embodiment, the two types of thin film layers L1 and L2 constituting the EUV reflection block 103 are, for example, a C layer and a Si layer, respectively. Regarding the thickness of the thin film layers L1 and L2, for example, the thickness of the C layer is about 2.64 nm, and the thickness of the Si layer is about 4.44 nm. Further, for example, 80 sets of the thin film layers L1 and L2 are stacked. As a result, the EUV reflection block 103 has an equal periodic structure in which thin film layers L1 and L2 having equal thicknesses are alternately stacked.
The EUV reflection block 103 may be formed so that the thin film layer L2 (Si layer) is the outermost surface, or may be formed so that the thin film layer L1 (C layer) is the outermost surface.

In addition to C / Si, the combination of the thin film layers L1 and L2 is, for example, a combination of SiO ₂ / Si, Si ₃ N ₄ / Si, or three or more substances such as C / Si ₃ N ₄ / Si. The configuration of is also possible. Also, one of the thin film layers L1 and L2 can be made of Si or C, and the other layer can be made of any of the following substances. For example, CdTe, GaAs, GaP, Ge, InAs, InP, SiC, ZnS, LiF, KCl, SiO ₂ , SiO, etc.

Any one of the layers of the thin layers L1, L2, when constituted by Si is the other layer for example, CdTe, InAs, SiC, LiF, KCl, be composed of any of SiO ₂ preferred. These two layers are alternately laminated about 100 layers (50 sets) periodically, and the film thickness is optimized so that the EUV reflection block 103 with respect to the vertically incident exposure light having a wavelength of about 13.5 nm is obtained. For example, 20% or more. The other layer is more preferably composed of CdTe or LiF. As a result, the reflectance of the EUV reflection block 103 with respect to the exposure light incident vertically can be set to 30% or more, for example.

  When one of the thin film layers L1 and L2 is made of C, the other layer is preferably made of, for example, KCl. These two layers are alternately laminated about 100 layers (50 sets) periodically, and the film thickness is optimized so that the EUV reflection block 103 with respect to the vertically incident exposure light having a wavelength of about 13.5 nm is obtained. For example, it is possible to make the reflectance of 20% or more.

  The non-exposure light reflection preventing block 104 is a thin film disposed on the lower surface side (substrate side) of the EUV reflection block 103. The non-exposure light reflection preventing block 104 is a single layer film or a multi-thin film having two to several tens layers. As a substance constituting the non-exposure light reflection preventing block 104, a substance that absorbs the non-exposure light wavelength that reaches through the EUV reflection block 103 or an optical characteristic and a film that allow the light to pass through the substrate 101 due to an interference effect are used. A material having a thickness can be used.

  In the present embodiment, the non-exposure light antireflection block 104 is an SiO single layer film that can obtain an interference effect at a wavelength of about 10600 nm, which is the oscillation wavelength of a carbon dioxide laser, for example. The non-exposure light antireflection block 104 has a thickness capable of obtaining an interference effect and transmitting non-exposure light into the substrate 101 as an antireflection film. That is, the EUV reflection block 103 in which the thickness of each layer is sufficiently small with respect to the wavelength of the non-exposure light behaves like a single thin film with respect to the non-exposure light, and the non-exposure light disposed immediately below the non-exposure light. Non-exposure light is transmitted to the antireflection block 104.

  The non-exposure light reflection preventing block 104 may have a structure that prevents reflection by absorbing non-exposure light instead of transmitting it into the substrate 101. As such a material, for example, carbon black can be used.

  FIG. 3 is a graph showing the relationship between the wavelength of exposure light incident at an incident angle of 15 ° from the multilayer film 102 side of the optical element 100 and the reflectance of the optical element 100. FIG. 4 is a graph showing the relationship between the wavelength of non-exposure light incident at an incident angle of 15 ° from the multilayer film 102 side of the optical element 100 and the reflectance of the optical element 100.

  As shown in FIG. 3, the optical element 100 has a high reflectance of about 55% with respect to light having a wavelength of about 13.5 nm, which is the wavelength of exposure light. On the other hand, it can be seen that it has a low reflectance of 20% or less for light in the infrared region of about 10600 nm, which is the wavelength of non-exposure light.

  That is, the EUV reflection block 103 reflects exposure light having a wavelength of about 13.5 nm using a carbon dioxide laser as excitation light, and transmits non-exposure light including excitation light having a wavelength of about 10600 nm. The non-exposure light that has passed through the EUV reflection block 103 passes through the non-exposure light reflection prevention block 104 and enters the substrate 101. At this time, the non-exposure light antireflection block 104 transmits the non-exposure light to the inside of the substrate 101 as an antireflection film to prevent the non-exposure light from being reflected on the optical path of the exposure light. The non-exposure light that has entered the substrate 101 passes through the substrate 101 and is emitted to the outside of the substrate 101.

Here, for comparison with the optical element 100 of the present embodiment, a conventional optical element including an exposure light reflection film including a Mo layer will be described. The exposure light reflection film has a two-layer structure in which a Mo layer and a Si layer are laminated in order from the substrate side.
FIG. 7 is a graph showing the relationship between the wavelength of exposure light incident on a conventional optical element at an incident angle of 15 ° and the reflectance. FIG. 8 is a graph showing the relationship between the reflectance and the wavelength of non-exposure light incident on a conventional optical element at an incident angle of 15 °.

  As shown in FIG. 7, the conventional optical element has a higher reflectivity for excitation light having a wavelength of about 13.5 nm than the graph of the optical element 100 shown in FIG. However, as shown in FIG. 8, the reflectance of non-exposure light including excitation light having a wavelength of 10600 nm is 95% or more. Therefore, in the conventional optical element, an effective antireflection effect cannot be obtained for a light source that uses a carbon dioxide laser in the infrared region as excitation light. Therefore, a part of the non-exposure light is absorbed by each optical element, wafer, stage, etc., and there is a possibility that the shape change due to thermal expansion is induced and the imaging performance is adversely affected.

  On the other hand, according to the optical element 100 of the present embodiment, it is possible to selectively reflect exposure light having a wavelength of about 13.5 nm while preventing reflection of non-exposure light including excitation light having a wavelength of about 10600 nm. The temperature rise of the optical element 100, the wafer, and the stage can be prevented. Therefore, it is possible to effectively suppress the non-exposure light spectrum of the light source device 50 using a carbon dioxide laser as excitation light, and to maintain good imaging performance of each optical element 100, wafer, stage, and the like.

  Next, a second embodiment of the present invention will be described. This embodiment is different from the above-described embodiment in that the EUV reflection block 103 shown in FIG. The unequal periodic structure is a structure in which the film thicknesses of the thin film layers L1 and L2 of the EUV reflection block 103 shown in FIG. 2 are appropriately changed according to the wavelength range of EUV light and the magnitude of the light incident angle.

  The EUV reflection block 103 having such a non-periodic structure is used as an oblique incidence mirror for dealing with a relatively wide angle width of a light incident angle of about 74 ° to 79 °, for example. The number of thin film layers L1 and L2 in the EUV reflection block 103 having an unequal periodic structure can be nine layers, for example. Other configurations are the same as those of the optical element 100 of the above-described embodiment.

  As a specific configuration example of the EUV reflection block 103 and the light reflection prevention block 104 having an unequal periodic structure, for example, the first layer from the substrate 101 side is a C layer with a film thickness of 972.6 nm, and the second layer is a film thickness. Is a 10.1 nm Si layer, the third is a C layer having a thickness of 17.6 nm, the fourth is a Si layer having a thickness of 12.3 nm, the fifth is a C layer having a thickness of 14.8 nm, The sixth layer is a Si layer with a thickness of 14.4 nm, the seventh layer is a C layer with a thickness of 11.7 nm, the eighth layer is a Si layer with a thickness of 19.1 nm, and the ninth layer is a thickness of 17 .0 nm C layer. In this configuration, the first C layer functions as the light reflection preventing block 104, and the second to ninth layers function as the EUV reflection block 103 (thin film layers L1, L2).

  FIG. 5 is a graph showing the relationship between the incident angle of exposure light and the reflectance when the EUV reflection block 103 has an irregular periodic structure in the optical element 100 described above. FIG. 6 is a graph showing the relationship between the wavelength of non-exposure light incident at an incident angle of 75 ° and the light reflectance when the EUV reflection block 103 has an irregular periodic structure in the optical element 100.

  As shown in FIG. 5, according to the optical element 100 of the present embodiment, a high reflectance of about 55% is maintained with respect to exposure light having a relatively wide angle width with an incident angle of about 74 ° to 79 °. can do. Moreover, as shown in FIG. 6, the reflectance with respect to the non-exposure light containing excitation light with a wavelength of about 10600 nm can be suppressed to about 30%.

  Therefore, according to the optical element 100 of the present embodiment, it is possible to selectively reflect exposure light having a wavelength of about 13.5 nm while preventing reflection of non-exposure light including excitation light having a wavelength of about 10600 nm. The temperature rise of the optical element 100, the wafer, and the stage can be prevented. Therefore, it is possible to effectively suppress the non-exposure light spectrum of the light source device 50 using a carbon dioxide laser as excitation light, and to maintain good imaging performance of each optical element 100, wafer, stage, and the like.

Next, a modified example of the optical element 100 of the present embodiment will be described.
FIG. 9A is a cross-sectional view of the optical element 100 including the single-layer non-exposure light antireflection block 104 described in the above embodiment. FIGS. 9B and 9C are cross-sectional views of modifications of the optical element 100 including the non-exposure light antireflection blocks 204 and 304 having a multilayer structure.
Instead of the single-layer non-exposure light reflection preventing block 104 shown in FIG. 9A, as shown in FIG. 9B, four layers of C layer 204a, SiO ₂ layer 204b, SiC layer 204c, and SiO ₂ layer 204d are provided. A non-exposure light antireflection block 204 made of a layer may be used. Further, as shown in FIG. 9B, a non-exposure light antireflection block 304 including four layers of a C layer 304a, a SiO layer 304b, a Si layer 304c, and a SiC layer 304d may be used.
According to the modification shown in FIG. 9A and FIG. 9C, similarly to the optical element 100 described above, it is possible to obtain an antireflection effect of non-exposure light including excitation light having a wavelength of about 10600 nm.

FIG. 10A to FIG. 10C are cross-sectional views showing other modifications of the optical element 100.
As shown in FIGS. 10A to 10C, the excitation light transmitted through the substrate 101 is applied to the surface of the optical element 100 opposite to the surface on which the non-exposure light reflection preventing block 104 is provided. You may provide the reflection preventing part (excitation light reflection preventing part) which prevents reflection of the non-exposure light containing.

Specifically, as shown in FIG. 10A, the non-exposure light is reflected in a direction different from the optical path of the exposure light on the surface of the substrate 101 opposite to the surface on which the non-exposure light reflection preventing block 104 is provided. A reflective surface 101a can be provided. As shown in FIG. 10B, a scattering portion 101b that scatters non-exposure light can be provided on the surface of the substrate 101 opposite to the surface on which the non-exposure light antireflection block 104 is provided. Further, as shown in FIG. 10C, an antireflection layer 105 for preventing non-exposure light from being reflected on the surface of the substrate 101 opposite to the surface on which the non-exposure light antireflection block 104 is provided. It may be provided.
According to such a configuration, reflection of non-exposure light including excitation light transmitted through the substrate 101 can be prevented, and non-exposure light can be prevented from being reflected by the optical path of exposure light.

  Next, the overall operation of the exposure apparatus 10 configured as described above will be described. In the exposure apparatus 10, the mask MA is illuminated with illumination light from the illumination optical system 60, and a pattern image of the mask MA is projected onto the wafer WA by the projection optical system 70. As a result, the pattern image of the mask MA is transferred to the wafer WA.

  As described above, in this embodiment, the light source light that is emitted from the laser plasma light source 51 and contains a mixture of non-exposure light including EUV light (exposure light) and excitation light having a wavelength of 10600 nm reaches the multilayer film 102. Of the light source light that reaches the multilayer film 102, EUV light (exposure light) is selectively reflected by the EUV reflection block and transmitted to the subsequent optical system. The non-exposure light passes through the EUV reflection block 103 and reaches the non-exposure light reflection prevention block 104 disposed on the substrate 101 side, and is guided to the substrate 101 side by absorption or interference effect. Thereby, each optical element 100, a wafer, a stage, etc. can be prevented from thermal expansion and shape change by non-exposure light, and imaging performance can be maintained favorably.

  The above is the description of the exposure apparatus 10. By using such an exposure apparatus 10, it is possible to provide a device manufacturing method for manufacturing semiconductor devices and other micro devices with a high degree of integration. Specifically, as shown in FIG. 11, the microdevice has a step of designing the function and performance of the microdevice, a pattern, etc. (S101), and a step of producing a mask MA based on this design step (S102), A substrate manufacturing process (S103) for preparing a wafer WA as a substrate of the device, an exposure processing process (S104) for exposing the pattern of the mask MA onto the wafer WA by the exposure apparatus 10 of the above-described embodiment, a series of exposure and etching, etc. The device is manufactured through a device assembly process (S105) for completing the element while repeating the steps, a device inspection process after assembly (S106), and the like. The device assembly process (S105) includes a normal dicing process, a bonding process, a package process, and the like.

  In the above embodiment, the exposure apparatus using EUV light as the light source light has been described. However, the present invention relates to a soft X-ray optical instrument such as a soft X-ray microscope or a soft X-ray analyzer using soft X-rays as the light source light. It is also applicable to. Specifically, by incorporating the optical element 100 as shown in FIG. 2 as an optical element constituting the soft X-ray optical apparatus, the optical characteristics of the optical apparatus can be maintained well without increasing the cost. Is possible.

  Further, all of the mirrors 54, 55, 61, 62, 63, 64, 71, 72, 73, 74 and the mask MA constituting the optical system of the exposure apparatus 10 need to be the optical element 100 illustrated in FIG. Alternatively, each optical system may be configured such that at least one of the illumination optical system 60 and the projection optical system 70 includes the optical element 100 of FIG. For example, if the optical element 100 of FIG. 2 is used as each optical element constituting the illumination optical system 60, a high reflectance can be ensured even on the upstream side of the exposure apparatus 10, and throughput can be improved more reliably. Can do.

DESCRIPTION OF SYMBOLS 10 Exposure apparatus, 51 Laser plasma light source (light source), 100 Optical element, 101 Substrate, 101a Reflection surface (excitation light reflection prevention part), 101b Scattering part (excitation light reflection prevention part), 103 EUV reflection block (exposure light reflection layer) ), 104, 204, 304 Non-exposure light antireflection block (excitation light antireflection layer), 105 Antireflection layer (excitation light antireflection part)

Claims (5)

An exposure light reflecting layer that reflects exposure light using a carbon dioxide laser as excitation light and transmits the excitation light, and an excitation light antireflection layer that prevents reflection of the excitation light are provided on the light source side in the optical path of the exposure light. The optical elements are stacked in this order. The optical element according to claim 1,
The exposure light reflecting layer includes lithium (Li), carbon (C), oxygen (O), fluorine (F), silicon (Si), phosphorus (P), sulfur (S), chlorine (Cl), potassium (K). ), Zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), cadmium (Cd), indium (In), and tellurium (Te). An optical element. The optical element according to claim 1 or 2,
The excitation light antireflection layer is provided on a substrate;
An excitation light reflection preventing portion for preventing the excitation light transmitted through the substrate from being reflected on the optical path of the exposure light is provided on the surface of the substrate opposite to the surface on which the excitation light reflection preventing layer is provided. An optical element characterized by comprising: An exposure apparatus comprising the optical element according to any one of claims 1 to 3. A device manufacturing method, wherein the exposure apparatus according to claim 4 is used to expose a photosensitive agent on a substrate on which a photosensitive agent is formed.

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