200416390 玖、發明說明： 【發明所屬之技術領域】 本發明係有關晶圓檢查裝置’特別係有關檢 晶圓外周邊緣部破損之晶圓檢查裝置。 _ 【先前技術】 習知，半導體晶圓外周邊緣部之缺陷，係檢查者利用 如明系統將光照射於晶圓，直接目視晶圓之外周，檢 缺陷部（切口、刮傷等端部之缺陷）來進行檢查。 “ 另—方面，習知，如日本專利特開平㈣ 公 所揭示之技術。 死A報 該習知技術係晶圓之端部缺陷檢查裝置切口 ==:邊緣部是否有缺陷(裂縫)者。該端部缺 從^。 圓外周邊緣部之端面垂直射人平行光， 以嗲光’:二面】之反射光中’藉由橢圓鏡將高次之繞射光加 桩〜“ 媒°亥、兀射先之強度及/或頻率成分，來 特疋核查該端面之缺陷、狀態。 水 (專利文獻1)日本專利特開平9_269298號公報 【發明内容】 4疋 口亥立而面缺陷檢杳梦署；入# — 士 圓外周邊緣部之端面缺ρ ^ 4度精良地檢測出晶 到：^以外之微細刮傷，其結果，未逵 合右紅+ 、J出 又，該端面缺陷檢查裝置， 曰，發現不發生高次繞射光之平面缺陷。 本發明係為了解決上述習知 提供-種晶圓檢查裝置H 碭成者、目的係 、 俾月b迅速且確實檢測出半導體晶 200416390 圓外周邊緣部之缺陷部（缺陷）。 申明專利範圍弟1項之晶圓檢查裝置，其特徵在於具 備： 旋轉台，係用來載置半導體晶圓，並使該半導體晶圓 旋轉； 投光機構，係沿該半導體晶圓面之垂直方向配置，照 射檢查光以檢查載置於該旋轉台之半導體晶圓外周邊緣部 之缺陷； 檢測機構，係以隔著該外周邊緣部的方式配置成與該 投光機構相對向，接受來自該外周邊緣部之檢查光後^ 出檢測信號；以及 $ =乙係根據來自該檢測機構之檢測信號，來判 別該半導體晶圓外周邊緣部之缺陷。 其特徵在於具 申請專利範圍第2項之晶圓檢查 備： 切口 1=導=來載置於外周邊緣部形成預對準用基準 邙+導體曰曰圓，並使該半導體晶圓旋轉·， 投光機構，係沿該半導體晶圓面之垂直方 射檢查光以檢查載置於該旋轉台之半 二：照 之缺陷； _外周邊緣部 檢測機構，传以ρ 4 A # 係U P网者遠外周邊緣部的方 投光機構相對向’接受來自該外周邊緣部之::置先， 出包含料料緣料_訊之檢㈣ 判別機構’係根據來自該檢測機構之檢測^來 200416390 別該半導體晶圓之基準切π部和基準切口部以外之該缺陷 〇 申請專利範圍帛3項之晶UI檢查裝置，係在巾請專利 範圍第2項之晶圓檢查裝置中，該判別機構係將該檢測信 號微分，根據微分值來進行該基準切口部和該缺陷部之判 別。 —申請專利範圍帛4項之晶圓檢查裝置，係在中請專利 乾圍第2 $ 3項之晶圓檢查裝置中，其具有位置檢測機構 ，以该基準切口部為基準來檢測出該晶圓之缺陷部之座標 〇 申請專利範圍第5項之晶圓檢查裝置，係在申請專利 乾圍第4項之晶圓檢查裝置中，使用該位置檢測機構所檢 測出之忒圓之缺陷部之座標，來進行該缺陷部之微檢查 〇 申請專利範圍第6項之晶圓檢查裝置，係在申請專利 範圍第2項之晶圓檢查裝置中，其具有： 位置檢測機構，係用來檢測出載置在該旋轉台之晶圓 之基準切口部之座標及該缺陷部之座標；以及 判斷杜:構’係從該晶圓之基準切口部和缺陷部之座標 位置’來判斷該晶圓之好壞。 申巧專利範圍第7項之晶圓檢查裝置，係在申請專利 範圍第1〜6項中任一項之圓檢查裝置中，其具有預對準 機構’當該判別機構檢測出無該缺陷時，則進行該晶圓之 預對準。 200416390 【實施方式】 ’ 以下’利用圖式來詳細說明本發明之實施形態。 第1圖及第2圖係表示本發明之晶圓檢查裝置之一實 施形態。 本貫施形悲之晶圓檢查裝置係具有用來載置半導體晶 圓基板（以下簡稱晶圓）n之旋轉台13。 旋轉台13 ’係透過旋轉軸15而被支持於旋轉部17。 在旋轉部1 7 ’配置用來使旋轉軸15旋轉之馬達19。 旋轉部17係載置在χγ台21上，如第2圖所示，能往 X方向及Y方向移動。 在晶圓11 一側之外周邊緣部上方，如第丨圖所示，在 載置於旋轉台1 3之晶圓11之外周邊緣部配置用來將光投 射之投光系統23。 5亥技光糸統2 3係具有光源2 5和透鏡2 7。 在光源25中，能使用發光二極體和雷射二極體。 透鏡27係將來自光源25之光形成平行光後，投光在 晶圓11之外周。 在晶圓11之投光系統2 3側之外周邊緣部下方配置檢 測部2 9，以接受投射於晶圓11 (載置於旋轉台1 3 )外周之 光。 本實施形態係在檢測部29，使用檢測出光之明暗邊界 部之CCD感測器。即，檢測部29係檢測出未被晶圓i i遮 光之透過光之光量。 在晶圓11面上方之投光系統23之相反側，配置用來 進行晶圓11微檢查之顯微鏡31。 · · ^上述之晶圓檢查裝置係在旋轉台13上載置晶圓u， :由旋轉部17之馬達19來轉動旋轉軸15，藉此使晶圓u 疑轉。 …、後’在使晶圓11旋轉之前，光源25亮燈，來自投 产:二23之光係彺下投射至晶圓11之外周邊緣部，藉由 才双測口P 29，檢測出被晶圓u 光。 圓11之外周邊緣部所遮光部分之 又’本實施形態，如第？圄新- , 緣 # 2圖所不’在晶圓π之外周邊 、彖4 形成由切口所構成之美進切口如 基準切口部lla以外n 部…。並且，除了 卜存在缺陷之缺陷部11 b。 在旋轉台13上，以筮9固士， 種肤能β 以弟2圖之狀態載置晶圓11，在這 種狀恶下使其往第2圖之箭頭Ε方向旋轉。 切二η在轉台13旋轉前之狀態，從開始測定點3起基準 切口部11a係位於角度0 + 度0 2之位置。 置，缺陷部lib係位於角 弟3圖係表示在投 從開始測定點s起旋二n ?之光源25亮燈之狀態， 檢測信號^之—例。 圈時’被檢測部29檢測出之 在第3圖中，橫軸曰 台13之Θ座栌值_…不 11之旋轉角度，即旋轉 29之檢測信號之值。 &自以⑽所構成之檢測部 部29tc自CD^=29之檢測信號S1之值係對應投影於檢測 〜卩（心Μ之㈣繼術）和明部 9 200416390 (未被晶圓11之外周部遮光之部分）之邊界位置。 在本實施形態，因旋轉台1 3之旋轉軸15之中心和晶 圓11之中心未完全一致，故如第3圖所示，縱軸之檢測信 说S1之值係隨著晶圓丨丨之旋轉而呈圓弧狀緩慢變化。 又’如第3圖所示，在檢測信號si中，檢測出由切口 所構成之基準切口部lla和基準切口部Ua以外之缺陷部 lib 〇 第4圖係表示上述之晶圓檢查裝置之方塊圖。200416390 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a wafer inspection device ', and particularly to a wafer inspection device for inspecting a peripheral edge portion of a wafer for damage. _ [Previous technology] It is known that the defect of the peripheral edge of a semiconductor wafer is that the inspector uses the Ruming system to irradiate light to the wafer, directly visually inspect the outer periphery of the wafer, and inspect the defect (such as cuts, scratches, etc.) Defects). "On the other hand, the conventional technology is disclosed by the Japanese Patent Laid-Open Patent. The dead technology reported that the conventional technology is the cut of the edge defect inspection device of the wafer ==: whether there is a defect (crack) on the edge. The The end is missing ^. The end face of the outer peripheral edge of the circle shoots parallel light perpendicularly, and the reflected light in the ': two sides] is used to pile the higher-order diffracted light through an elliptical mirror ~ "Medium, Hai, Wu The intensity and / or frequency components of the first shot are used to check the defects and status of the end face. Water (Patent Document 1) Japanese Patent Laid-Open Publication No. 9_269298 [Summary of the Invention] 4 疋 口 海 立 面面 面面 杳 测 杳 梦 杳 部; Up to: ^ Small scratches other than ^, as a result, the right red +, J out are not combined, and the end face defect inspection device was found to have no plane defects of high-order diffracted light. In order to solve the above-mentioned conventional problems, the present invention provides a wafer inspection device H, a producer, a purpose system, and a semiconductor wafer 200416390 to quickly and surely detect a defective portion (defect) of a peripheral edge portion of a semiconductor crystal. The wafer inspection device claiming the scope of patent claim 1 is characterized by: a rotating table for mounting a semiconductor wafer and rotating the semiconductor wafer; a light projection mechanism perpendicular to the surface of the semiconductor wafer It is arranged in the direction and irradiates inspection light to inspect defects on the peripheral edge portion of the semiconductor wafer placed on the turntable; the detection mechanism is arranged to face the light projection mechanism through the peripheral edge portion and receives the light from the A detection signal is obtained after the inspection of the peripheral edge portion; and $ = B is used to determine the defect of the peripheral edge portion of the semiconductor wafer based on the detection signal from the detection mechanism. It is characterized by the wafer inspection equipment with the second patent application scope: notch 1 = guide = is placed on the outer peripheral edge to form a pre-aligned reference 邙 + conductor circle, and the semiconductor wafer is rotated. The light mechanism is to emit inspection light along the vertical direction of the semiconductor wafer surface to check the second half of the turntable: the defect of the photo; _outer peripheral edge detection mechanism, transmitted by ρ 4 A # is the outer periphery of the UP network The square projection light mechanism at the edge part relatively accepts the ":: first, from the peripheral edge part, and outputs the detection material containing the material edge material_news. The discriminant body" is based on the inspection from the detection body ^ to 200416390 do not the semiconductor This defect other than the reference cut portion of the wafer and the reference notch portion. The crystal UI inspection device of the patent application No. 3 item is in the wafer inspection device of the patent item No. 2 item. The detection signal is differentiated, and the reference notch portion and the defective portion are discriminated based on the differential value. —The wafer inspection device with the scope of patent application No. 4 is in the wafer inspection device with No. 2 $ 3 in the patent application. It has a position detection mechanism to detect the crystal with the reference notch as the reference. The coordinates of the defective part of the circle. The wafer inspection device of the patent application No. 5 is used in the wafer inspection device of the patent application No. 4, using the round defective part detected by the position detection mechanism. Coordinate to perform a micro-inspection of the defective part. The wafer inspection device under the patent application No. 6 is among the wafer inspection devices under the patent application No. 2 and includes: a position detection mechanism for detecting The coordinates of the reference notch portion of the wafer placed on the turntable and the coordinates of the defect portion; and the judgment mechanism: 'the position of the wafer is determined from the coordinates of the reference notch portion and the defect portion of the wafer' Good or bad. The wafer inspection device in Shenqiao's patent scope No. 7 is a circle inspection device in any of patent application scope Nos. 1 to 6, which has a pre-alignment mechanism 'when the discrimination mechanism detects that there is no such defect , Then pre-align the wafer. 200416390 [Embodiment] The following describes the embodiment of the present invention in detail using drawings. Figures 1 and 2 show one embodiment of the wafer inspection apparatus of the present invention. The conventional wafer inspection apparatus includes a rotary table 13 for placing a semiconductor wafer (hereinafter referred to as a wafer) n. The rotating table 13 'is supported by the rotating portion 17 through the rotating shaft 15. A motor 19 for rotating the rotating shaft 15 is disposed in the rotating portion 17 '. The rotating portion 17 is mounted on the χγ stage 21 and can move in the X direction and the Y direction as shown in Fig. 2. Above the outer peripheral edge portion of the wafer 11 side, as shown in the figure, a light projection system 23 for projecting light is disposed on the outer peripheral edge portion of the wafer 11 placed on the turntable 13. The 5 series of light technology 2 3 has a light source 25 and a lens 27. As the light source 25, a light emitting diode and a laser diode can be used. The lens 27 projects the light from the light source 25 into parallel light, and then projects the light onto the outer periphery of the wafer 11. A detection unit 29 is arranged below the peripheral edge portion of the light-emitting system 23 on the wafer 11 side to receive light projected on the periphery of the wafer 11 (mounted on the turntable 1 3). In the present embodiment, a CCD sensor is used in the detection section 29 to detect the light-dark boundary portion of light. That is, the detection unit 29 detects the light amount of the transmitted light which is not blocked by the wafer i i. On the opposite side of the projection system 23 above the surface of the wafer 11, a microscope 31 is provided for performing micro inspection of the wafer 11. The above-mentioned wafer inspection device mounts the wafer u on the turntable 13: the motor 19 of the rotating portion 17 rotates the rotation shaft 15 to thereby cause the wafer u to rotate suspiciously. …, After 'before the wafer 11 is rotated, the light source 25 is turned on, and the light source 25 is put into production: the light system of the second 23 is projected to the outer peripheral edge of the wafer 11 and the double crystal port P 29 is used to detect the crystal Circle u light. The light shielding portion of the peripheral edge portion of the circle 11 is another embodiment of this embodiment.圄 新-, 缘 # 2 图 不 ’On the periphery of the wafer π, 彖 4 forms a beautiful cut made of cuts, such as n parts other than the reference cut part 11a. In addition, except for the defective portion 11 b having a defect. On the rotating table 13, the wafer 11 is placed at 9 °, and the seed energy β is placed in the state shown in FIG. 2, and the wafer 11 is rotated in the direction of the arrow E in FIG. 2 in this state. The state of the second cut η before the turntable 13 is rotated, and the reference notch portion 11a is located at an angle of 0 + degree 02 from the starting measurement point 3. The defect part lib is located at the corner. The figure 3 shows the state where the light source 25 is turned on by turning n n from the start measurement point s, and the detection signal ^ is an example. The lap time is detected by the detection unit 29. In the third figure, the horizontal axis represents the value of Θ of the platform 13 _... the angle of rotation of 11, which is the value of the detection signal of the rotation 29. & The detection section 29tc composed of self-injection ⑽ The value of the detection signal S1 from CD ^ = 29 corresponds to the projection on the detection ~ 卩 (Heart M's succession operation) and the bright section 9 200416390 (not wafer 11 The border position of the outer peripheral part). In this embodiment, since the center of the rotation axis 15 of the turntable 13 and the center of the wafer 11 are not completely the same, as shown in FIG. 3, the detection letter of the vertical axis says that the value of S1 follows the wafer. The rotation changes slowly in an arc shape. Also, as shown in FIG. 3, in the detection signal si, a defect portion lib other than the reference notch portion 11a composed of the notch and the reference notch portion Ua is detected. FIG. 4 is a block diagram showing the wafer inspection apparatus described above Illustration.
本晶圓檢查裝置係具有：判別部33、位置檢測部35、 預對準部3 7及微檢查部3 9。 判別部33，係在輸入檢測部29之檢測信號S1後，根 據檢測信號si來判別晶圓u之基準切口部Ua和基準切 口部11 a以外之缺陷部丨i b。 在本實施形態’判別部33係將檢測信號S1微分，根 據微分值來進行基準切n .. 1签平卞刀口部1 la和缺陷部1 lb之判別。This wafer inspection apparatus includes a discrimination section 33, a position detection section 35, a pre-alignment section 37, and a micro-inspection section 39. The discriminating unit 33 judges the reference notch portion Ua of the wafer u and the defect portion other than the reference notch portion 11a of the wafer u based on the detection signal si after the detection signal S1 of the detection unit 29 is input. In this embodiment ', the discrimination section 33 differentiates the detection signal S1, and performs a reference cut n .. 1 based on the differential value to judge the flat blade edge section 1a and the defective section 1b.
第5圖係表不將帛3圖所示之檢測信號si微分後之微 分信號圖，橫轴係表示s m , 衣不日日Η 11之角度位置，即表示旋轉 台13之β座標值，縱轴係表示微分值。 由切口所構成之基準切口部lla，因形成預先既定之 尺寸及形狀’故同一種類之晶圓U，基準切口部lla之尺 寸及形狀大致相同。g] + 141此’若微分信號之形狀（微分值之 變化）也係同一種類夕曰m ^貝之曰曰囫的話，則大致相同。微分值之 變化係用第5圖所示之嘗W1 J > ττι A 士 、見W1和鬲HI來表示。 又’表不如土匕基準切口冑Ua之微分值變化之值係被 10 200416390 預先記憶在判別部33。 另一方面，缺陷部1 lb之形狀係視狀況而異之形狀， 一般而言，表示缺陷部llb之微分值變化值之寬W2和高 H2係與表示基準切口部Ua之微分值變化值之寬们和高 H1有很大差異。 口此判別部3 3係分別比較表示所記憶之基準切口部 1八 1二，微分值之變化之寬W1與高H1之值、和表示根據微 刀仏就所求出之微分值變化之寬與高之值，藉此來判斷該 齡值之變化處是基準切口部lla，還是缺陷部llb。具體 而言’根據微分信號所求出之寬W2係與預先所記憶之wi 之值相較，判斷是否在容許範圍内。x ’根據微分信號所 i出i高H2係與預先所記憶之hi之值相較，判斷是否在 午範圍内。右兩者之值皆在容許範圍内’則判斷該部分 為基準切口部 1丨 芸 ^ 右其任值不在容許範圍内，則判斷 該部分為缺陷之缺陷部1 i b。 又，能檢測出之缺陷部llb之尺寸，基本上係取決於 檢測部29(CCD)之解析度，但藉由光學系統之配置，能檢 v則出較CCD之解析度為小之缺陷部11匕。 位置檢測部35係用來檢測出載置於旋轉台13之晶圓 11之基準切口部11 a及缺陷部11 b之座標。 在位置Up 35 ’係對應來自檢測部29之檢測信號 而輸入表示旋轉台13之Θ座標之信號及表示…21 ^ XY座標之信號。表示旋轉台13之0座標之信號係從旋 部17輸出之信號，表示Χγ台2…Y座標之信號係從 XY台21輸出之信號。 然後’根據這些信號， ，u對應弟3圖之檢測信號S1之各 仏旒位置來記憶旋轉台 。 < c /丄铩及χγ台21之χγ座標 又，當從判別部33輸入判斷 檢測部35就能檢測出對 以’位3 。又，對應缺陷部llb=;° 1…座標及_ 微檢查修 之θ座標及ΧΥ座標之資訊係輸“Fig. 5 shows the differential signal diagram after differentiating the detection signal si shown in Fig. 3, and the horizontal axis represents the angular position of sm, which is not sun-dried 11; that is, the β coordinate value of the rotary table 13; The axis system represents the differential value. Since the reference notch portion 11a formed by the notch is formed in a predetermined size and shape, the wafers U of the same type have substantially the same size and shape. g] + 141 Here, if the shape of the differential signal (change in differential value) is also of the same kind, it is roughly the same if it is m ^ Beizhi said. The change of the differential value is represented by the taste W1 J > ττι A 、 shown in Fig. 5, see W1 and 鬲 HI. Also, the value that is different from the differential value of Ua as the reference cut of the earth dagger is stored in the discrimination section 33 in advance. On the other hand, the shape of the defective portion 1 lb is a shape that varies depending on the situation. In general, the width W2 and the height H2 indicating the differential value change value of the defective portion 11b are the same as the differential value change value indicating the reference notch Ua. There is a big difference between wide and high H1. The discrimination section 3 3 compares the width of the differential value W1 and the height H1, which are the reference notch portions 18 and 22 which are memorized, and the widths of the differential values obtained by the micro-knife. And the high value, thereby determining whether the change in the age value is the reference notch portion 11a or the defective portion 11b. Specifically, the width W2 obtained from the differential signal is compared with the value of wi stored in advance to determine whether it is within the allowable range. x 'compares with the value of hi which is i in accordance with the differential signal, and determines whether it is within the range of noon. If both values on the right are within the allowable range, then the part is judged to be a reference notch 1 丨 If the value on the right is not within the allowable range, then the part is judged to be a defective part 1 i b. In addition, the size of the defect portion 11b that can be detected basically depends on the resolution of the detection portion 29 (CCD), but with the configuration of the optical system, v can be detected to produce a defect portion that is smaller than the resolution of the CCD. 11 daggers. The position detection unit 35 is used to detect the coordinates of the reference notch portion 11 a and the defective portion 11 b of the wafer 11 placed on the turntable 13. At the position Up 35 ', a signal representing the Θ coordinate of the turntable 13 and a signal representing ... 21 ^ XY coordinates are input in response to the detection signal from the detecting section 29. The signal indicating the 0 coordinate of the rotary table 13 is a signal output from the rotary unit 17, and the signal indicating the Xγ table 2 ... Y coordinate is a signal output from the XY table 21. Then, according to these signals, u, memorize the rotary table corresponding to the positions of the detection signals S1 in FIG. < c / 丄 铩 and χγ coordinates of the χγ station 21, and when the judging and detecting unit 35 is input from the judging unit 33, it is possible to detect a pair of bits' 3. In addition, the information corresponding to the defective portion llb =; ° 1 ... coordinate and _ micro-examination repair θ coordinate and XY coordinate information is lost "
當微檢查部39藉由判別部33判斷晶圓u存在缺陷名丨 nbk ’為了用顯微鏡31來微檢查晶圓^之缺陷部⑽， 而將晶圓u之缺陷部llb移動至顯微鏡3i之物鏡…阳 近之既定位置。 微檢查部39,係利用位置檢測部35所檢測出之晶 11之缺陷部lib之座標’而將晶圓u之缺陷部…移 至顯彳政鏡31之物鏡31 a附近之既定位置。When the micro-inspection unit 39 judges that the wafer u has a defect name through the discrimination unit 33, nbk 'in order to micro-inspect the defective portion of the wafer ^ with the microscope 31, the defective portion 11b of the wafer u is moved to the objective lens of the microscope 3i. … Yang Jinzhi's established position. The micro-inspection unit 39 moves the defective portion of the wafer u to a predetermined position near the objective lens 31 a of the display mirror 31 by using the coordinates of the defective portion lib of the crystal 11 detected by the position detection unit 35.
以位置檢測部35所檢測出之晶圓u之缺陷部Ub 座標，係晶圓11從第2圖之狀態起往E方向編度旋轉 之狀態’如第6圖所示成為（χ2、Y2、0 2)。 另一方面，為了使晶圓u之缺陷部Ub定位，將顯微 鏡31之物鏡31a附近之既定位置設定為，例如，如第6圖 所示，在XY台21之座標系中相對於原點之（χ3、γ3)。 在此，彳政檢查部3 9係藉由預先作成之既定程式，能將 位於現在（Χ2、Υ2、0 2)之位置之晶圓丨1之缺陷部丨lb移 動至（X3、Y3)之位置，以運算旋轉台13之旋轉角及χγ台 12 200416390 21之XY驅動量。 然後，僅以該運算後之旋轉角、 A 1 Q , ^ 0 艇動Ϊ來旋轉旋轉 口 13,而且，將χγ台2】往χ ，曰圓1 1 ·>认μ Υ方向移動。其結果 曰曰囡11之缺陷部Ub被移動 既定仿v。、 ㈣㈤^鏡31之物鏡附近之 置（X3、Y3)，俾藉由顯微鏡 微檢查。 兄末進仃缺陷部Hb之 當預對準部37藉由判斷部3? m i s — ± 日田^33來匈斷晶» 11之缺陷部 存在打，進行晶圓1〗之概略對準之預對準。 該預對準部37係利用位置檢測部35 11之基準切口部η ΘΗ131 查裝置之㈣位置。&，來使晶圓於晶圓檢 即’被位置檢測部35所檢測出之晶圓u之基準切口 a a之座標’在晶圓u從第2圖 度旋轉後之狀，態，係如第7圖所示成為〇Π、Υ1、^ 置二Γ，供晶圓11之基準切口部⑴定位之既定位 置係-疋為’例如，如第7圖所示，在ΧΗ Μ 中相對於原點之（Χ5、。 不糸 管，〜預對㈣37，係藉由預先作成之既定程式來運 开 立方、現在（Χ1、Υ1、0 D之位置之晶81 11之基準切 口部11a移動至 動至U5、Υ5)後，運算旋轉台13之旋 ΧΥ台21之ΧΥ驅動量。 -用及 /然後，僅以該運算後之旋轉角、ΧΥ驅動量來旋轉旋轉 口 13而且，將χγ台21往X方向、γ方向移動。其結果 將曰曰圓11之基準切口部Ua移動至預對準位置出、^) 13 200416390 接下來，藉由未圖示之搬送裝置從該位置移動至下— 製程。 又，在此實施形態，預對準部37係、如第3圖所示，具 有根據位置檢測部35所檢測出之晶圓丨丨之外周邊緣部之 形狀’求出晶圓11之旋轉中心’ 一面修正晶圓n之旋轉 中心和旋轉軸中心之偏差’―面進行預對準之功能。藉由 使用該功能，而能進行更正確之預對準。 曰 在上述之晶圓檢查裝置’由於在載置於旋轉台13之曰 圓U之外周邊緣部投射光，藉由檢測部29來檢測出^ 於晶圓11之外周邊緣部之光，舾嬙4人 尤根據檢測部29之檢測信號 S1來判別晶圓11之基準切口部】〗 1 Ua和基準切口部11a以 外之缺陷部11 b，故能迅速且禮眘} 疋且確實檢測出晶圓11外周邊緣 部之缺陷部11 b。 因此，在半導體製程之處 处主I牙王中，例如，能防患因 九、烤等熱處理而破壞晶圓丨丨於去 於禾然（防止缺陷部11 b所造 烕之破壞）。 i又’在半導體製程之初期製程中確實檢測出缺陷部 u b，藉此能防止成膜製程變成白費。 又’上述之晶圓檢杳获罢 , 接』 一凌置，由於係將檢測信號S1微分 ，根據微分值來進行基準+ 早刀口部11 a和缺陷部11 b之判 ’故能以高精度進行其進+ 別 土旱刀口部11 a和缺陷部11 b之判 進而 ，由於利用位詈；、、日,丨^ _ ^而部3 5所檢測出 之晶圓11之 14 200416390 缺陷部llb之座標，將晶圓k缺陷部llb移動至顯微鏡 31附近之既定位置，故能容易且確實進行微檢查。 又，上述之晶圓檢查裝置，由於在載置於旋轉台“之 晶圓11上缺陷部nb；f存在時，藉由預對準部3 0 11之預對準，故容易且確實進行晶圓η之預對準。 又，上述之實施形態，係針對根據晶圓u之缺陷 lib之微分信號之值（即缺陷部Ub之形狀），來判別曰圓 U之基準切π部lla和基準切口部lla以外之缺陷部aaub 之例加以說明，但本發明不被限定在該實施形態， 據晶圓η之基準切口部lla和缺陷部llb之 ^ 斷晶圓11之好壞。 求判Based on the coordinates of the defective portion Ub of the wafer u detected by the position detection unit 35, the state in which the wafer 11 is rotated in the E direction from the state shown in FIG. 2 is (χ2, Y2, 0 2). On the other hand, in order to locate the defective portion Ub of the wafer u, a predetermined position near the objective lens 31a of the microscope 31 is set to, for example, as shown in FIG. 6, in the coordinate system of the XY stage 21 with respect to the origin. (Χ3, γ3). Here, the administrative inspection department 39 is able to move the defective part 丨 1 of the wafer 丨 1 located at the current (X2, Υ2, 0 2) position to the (X3, Y3) position by using a predetermined program prepared in advance. The position is calculated by calculating the rotation angle of the rotary table 13 and the XY driving amount of the χγ table 12 20041639021. Then, the rotation port 13 is rotated only by the rotation angle, A 1 Q, ^ 0 after the calculation, and the χγ stage 2] is moved in the direction of χ, circle 1 1 · > As a result, the defective portion Ub of Y11 was moved to a predetermined imitation v. The position (X3, Y3) near the objective lens of the mirror 31 is inspected microscopically. When the brother enters the defect part Hb, the pre-alignment part 37 uses the judgment part 3? Mis — ± Hita ^ 33 to break the defective part of the Hungarian crystal »11 to perform a preliminary alignment of the rough alignment of the wafer 1. quasi. The pre-alignment portion 37 is used to check the position of the device using the reference notch portion η Θ 131 of the position detection portion 35 11. & to make the wafer in the wafer inspection, that is, the "coordinate of the reference cut aa of the wafer u detected by the position detection unit 35" after the wafer u is rotated from the second degree, the state is as follows As shown in FIG. 7, Π, Υ1, ^ are set to Γ, and the predetermined position for positioning the reference notch portion ⑴ of the wafer 11 is-疋 is' for example, as shown in FIG. 7, in XY, relative to the original Point of (X5 ,. Don't care, ~ pre-aligned with 运 37, the cubic notch part 11a of the crystal 81 11 at the position of χ1, Υ1, 0D is moved to the motion by a predetermined program made in advance. After U5, Υ5), calculate the XY drive amount of the rotary X / Y table 21 of the rotary table 13.-and / or, rotate the rotary port 13 only with the calculated rotation angle and XY drive amount. Move to the X direction and γ direction. As a result, the reference cut portion Ua of the circle 11 is moved to the pre-aligned position, ^) 13 200416390 Next, it is moved from this position to the bottom by a conveying device (not shown) — Process. In this embodiment, as shown in FIG. 3, the pre-alignment portion 37 has a shape of the wafer 11 detected by the position detection portion 35. The shape of the peripheral edge portion of the wafer 11 determines the rotation center of the wafer 11. 'One side corrects the deviation between the center of rotation of the wafer n and the center of the axis of rotation'-the function of pre-alignment of the side. By using this function, more accurate pre-alignment can be performed. In the above-mentioned wafer inspection apparatus, 'because light is projected on the peripheral edge portion of the circle U placed on the turntable 13, the detection portion 29 detects the light on the peripheral edge portion of the wafer 11,' Four people especially judge the reference cutout portion of the wafer 11 based on the detection signal S1 of the detection portion 29] [1] Ua and the defective portion 11b other than the reference cutout portion 11a, so they can quickly and carefully 疋 疋 and indeed detect the wafer 11 Defective portion 11 b at the peripheral edge portion. Therefore, in the process of semiconductor manufacturing, the main I tooth king, for example, can prevent the wafer from being damaged by heat treatment such as heat treatment such as baking, and then go to He Ran (prevent the damage caused by the defective portion 11 b). In addition, the defective portion u b is definitely detected in the initial process of the semiconductor process, thereby preventing the film-forming process from becoming wasted. Also, the above-mentioned wafer inspection was obtained. Then, because the detection signal S1 is differentiated and the reference value is determined based on the differential value + the judgment of the early knife edge portion 11 a and the defective portion 11 b, it can achieve high accuracy. The advancement + judgment of the all-terrain blade section 11 a and the defective section 11 b is performed. Further, due to the use of the position, the date, and the date of the wafer 11 detected by the section 35 5 200416390 defective section 11b Since the wafer k defect portion 11b is moved to a predetermined position near the microscope 31, the micro inspection can be easily and reliably performed. In addition, in the wafer inspection device described above, since the defect portion nb; f on the wafer 11 placed on the turntable "is present, the pre-alignment of the pre-alignment portion 3 0 11 is performed, so that the crystal can be easily and reliably performed. The pre-alignment of the circle η. In the above embodiment, the reference cut portion πa and the reference of the circle U are determined based on the value of the differential signal of the defect lib of the wafer u (that is, the shape of the defect portion Ub). The example of the defective portion aaub other than the notch portion 11a will be described, but the present invention is not limited to this embodiment. According to the reference notch portion 11a of the wafer n and the defective portion 11b, the quality of the wafer 11 is broken.
卩身又而°曰曰圓11係結晶構造’即使在晶圓J J 存在缺陷部 11 b，利用：i：盘|淮丄 , 其與基準切口部1la之相對位置關 係，而定位在不受缺陷部Ub破壞之位置。 即，如第8圖所示，例如，對應於基準切口部以， 2陷部山存在於從Θ7至㈣之範圍時，即使缺陷部⑽ 存在也不會引起破壞之虞。 在此，藉由位置檢測部35檢測出載置於旋轉台13之 晶圓η之基準切口部lla之座標及缺陷部m，藉由 33’利用缺陷部llb之座標位置相對於晶圓u之基準 Γ 口部Ua’判斷其是否存在於從角度Θ7到Θ8之範圍， 藉此能判斷晶圓π之好壞。 即’缺陷部llb之座標位置，在相對於晶圓Π之基準 切口部山係存在於從角度”到08之_之情形，_ 15 200416390 曰曰圓11無異常，而在偏離角度0 7到0 8之範圍之情形， 則判斷晶圓11為異常。 如此，利用缺陷部llb之存在，而能有效防止晶圓U 變成不能使用。 又，上述之實施形態，係針對將形成於晶圓丨i之切口 作為基準切口冑lla之例加以說明，但本發明不被限定在 該實施形態，例如，也可將形成在晶圓u之定向平面 (orientation fiat)當作基準切口部 Ua。 又，上述之實施形態，係針對將投光系統Μ配置在晶 圓11外周上方，藉由配置在晶圓u外周下方之檢測部29 檢測出來自晶K i"卜周之投下光之例加以說明，作本發 明不被限定在該實施形態，例如，也可藉由檢測部29來 檢測出被晶圓丨丨外周反射之反射光。 入如以上所述，本發明之晶圓檢查裝置，能迅速且確實 檢測出晶圓外周之缺陷。 【圖式簡單說明】 (一）圖式部分 側視2 /圖係表示本發明之晶圓檢錢置之—實施形態之 η圖係表示第！圖之晶圓檢查裝置之俯視圖。 弟3圖係表示藉由帛1圖之檢測部 號之說明圖。 吓鈿測出之檢測乜 圖係表示第！圖之晶圓檢查裝置之方塊圖。 圖係表示將第3圖之檢測信號微分後之微分信號 16 200416390 之說明圖。 第6圖係表示進行微檢查時之座標之說明圖。 第7圖係表示進行預對準時之座標之說明圖。 第8圖係表示即使存在缺陷部也不致造成破壞之基準 切口部和缺陷部之相對位置關係之說明圖。The body is also a circle 11 series crystal structure. Even if there is a defective portion 11 b on the wafer JJ, it is used: i: disk | Huaiyan, its relative positional relationship with the reference notch portion 1la, and it is positioned without defects. The location where the Ub was destroyed. That is, as shown in FIG. 8, for example, when the 2 recessed part mountains exist in the range from Θ7 to ㈣ corresponding to the reference cutout part, there is no risk of damage even if the defective part ⑽ exists. Here, the coordinates of the reference notch portion 11a and the defect portion m of the wafer η placed on the turntable 13 are detected by the position detection unit 35, and the coordinates of the defect portion 11b relative to the wafer u are used by 33 '. The reference Γ mouth portion Ua ′ judges whether it exists in a range from the angle θ7 to Θ8, thereby determining whether the wafer π is good or bad. That is, the coordinate position of the 'defective part 11b' is relative to the reference notch portion of the wafer Π. The mountain system exists from the angle "to 08", _ 15 200416390 said that the circle 11 is normal, and the deviation angle is 0 7 to In the range of 0, it is judged that the wafer 11 is abnormal. In this way, the presence of the defective portion 11b can effectively prevent the wafer U from becoming unusable. In addition, the above-mentioned embodiment is directed to the wafer to be formed on the wafer. The cut of i is described as an example of the reference cut 胄 lla, but the present invention is not limited to this embodiment. For example, an orientation fiat formed on the wafer u may be used as the reference cut portion Ua. The above-mentioned embodiment describes an example in which the light projection system M is disposed above the outer periphery of the wafer 11 and the detection unit 29 disposed below the outer periphery of the wafer u detects the light emitted from the crystal Ki " Bu Zhou. The present invention is not limited to this embodiment. For example, the reflected light reflected by the outer periphery of the wafer may be detected by the detection unit 29. As described above, the wafer inspection device of the present invention can quickly And check Defects on the outer periphery of the wafer. [Simplified description of the drawings] (I) Partial side view of the drawings 2 / The figure shows the wafer inspection of the present invention-the η diagram of the embodiment shows the wafer inspection of the figure! The top view of the device. Figure 3 is a diagram illustrating the inspection section number shown in Figure 1. Figure 3 shows the block diagram of the wafer inspection device shown in Figure 3. The figure shows the third section of the wafer inspection device. The differential signal 16 200416390 after the detection signal is differentiated in the figure is illustrated. Figure 6 is an explanatory diagram showing the coordinates when performing a differential inspection. Figure 7 is an explanatory diagram showing the coordinates when performing pre-alignment. Figure 8 is an illustration An explanatory diagram of the relative positional relationship between the reference notch portion and the defect portion that do not cause damage even if the defect portion is present.
(二）元件代表符號 11 晶圓 11 a基準切口部 11 b缺陷部 13 旋轉台 23 投光系統 29 檢測部 33 判別部 35 位置檢測部 37 預對準部 39 微檢查部(II) Symbols for components 11 Wafer 11 a Reference cutout 11 b Defective part 13 Rotary table 23 Light projection system 29 Detection part 33 Discrimination part 35 Position detection part 37 Pre-alignment part 39 Micro-inspection part
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