TW200415739A - Device and method for detecting stress migration - Google Patents

Abstract

The invention relates to a device and a method for detecting stress migration properties of a semiconductor module (IC) finally mounted in a product-relevant housing (G) with a stress migration test structure (SMT) formed in the semiconductor module (IC). In order to increase an accuracy of detection even of a stress Σg caused by the housing (G), an integrated heating device (IH) is formed within or in direct proximity to the stress migration test structure (SMT).

Description

200415739 V. Description of the invention (1) The present invention relates in particular to a framed semiconductor module, integrated circuit, manufacturing, which is connected by a pattern, one layer. The speed should be more and more due to the body transport. Or stress mechanical non-conductive matching, the alternation should be integrated and increased contact holes that can occur if some planes of the body substrate are connected by metallization, or in a device and method to detect the stress device and method to Detect the stress transfer properties of the last installation. Generally, they are electrically isolated from each other by a number of patterned metallization or dielectric interlayers. Between the interconnection layer or between the interconnection layer and the substrate, or the via hole is formed at a selected position. As a function of the circuit, the via hole becomes more susceptible to the general term. As a result of the mutual intermediate layer, the conductivity depends on the semiconductor mold. An interconnect or connection layer or dimensional thermal expansion caused by the direct current of a manufacturing or dielectric layer electron transfer is similar. This causes the mutual interaction in the group. "Lian" is called the opposite of the consistency of each order, and the special stress-to-hole contact between the number of non-material electrical conduction resistance is now improved, the area is small, the base stress-to-electron transfer is in the non-transition system. The resulting insulation matching and loss, according to the increased performance in the material, should be the original shift. The special mass transfer layer with different elastic compression or voids or even methods that are shifted to each other are considered. As an example, the interconnect layer formed above (the nature of the second transfer and the product-related external plane system is used to achieve the The electrical connection between them is caused by the mechanical stress caused by the increase of the size and special characteristics of the insulation characteristics. They change the mass and current density of the material. The other conductive and elastic modulus of this machine does not cause tensile stress or formation. The junction interconnection is interrupted, which is because the semiconductor

200415739

The tensile stress of the adjacent insulating layer of the chemical gas is attributed to the fact that after the interconnecting time, the edge layer layer of the segment pattern that generates the air-like interconnection is deposited by the CVD method (deposition on the interconnect layer and the Phase mechanical stress, such as pulling. Cavity is generated in the stress gradient generated by Cu through copper and gold. To be more precise, in order to reduce the dispersion, the result is that this mass is transmitted in a specific continuous layer or through hole. Electronic properties and can even lead to the simplified conventional devices shown in 1 A to 1 c. Deposition) Different expansion coefficients at temperatures of 350 ° C have caused stresses generated in the interconnect layer, such as Transmission due to heat mismatch (formation of voids). The hole in the layer's stress energy expands typically for months or years, at which the interstitial space affects the interruption of the semiconductor module. To illustrate the nature of detecting stress transfer

According to Fig. 1A, the reliability check of the above-mentioned stress transfer properties for characterizing interconnects and metallization, especially in integrated circuits or semiconductor module ICs, is performed directly at B-circle or at the wafer level. In this case, the resistances of the various stress transfer test structures SMT formed in the semiconductor module IC are measured at fixed intervals (such as hourly, daily, or weekly) and the deviation from the starting value is evaluated. During these measurements, wafers are stored in furnaces with temperatures in excess of 50 ° C. As a result, the period of these reliability checks can be significantly reduced to approximately 100 to 2000 hours to cover approximately 15 years Product life.

However, in the case of this type of test device, the disadvantages are that the obtained results are completely insufficient due to the lack of final installation of the outer frame, and in this regard, it is not possible to have stress transfer of the semiconductor module in an environment close to the product. Sufficiently accurate detection of nature. According to Figure 1 B ', this type of test can also be installed at the end.

200415739 V. Description of the invention (3) = The outer frame of TG is used to make a semiconductor mold. It is set on the module carrier T by bonding electricity B: skin. For example, the outer frame of the thermal stability ceramic test may not only detect and Evaluate the semiconductor module I. Μ βΛ # The stress caused by the installation or the solder connection B and the branch carrier T of the measuring frame TG ~, this type of inspection, -Q results again do not produce a semiconductor module with a product frame The correct description of the stress transfer properties of the interconnect system 'especially due to the test frame TG in relation to the product.

Further: According to the first (: figure, the semiconductor module 1 (to be inspected): (B) can also be connected by soldering B and the module carrier and implanted in the plastic frame G of the product, but in this case The problem area generated below is the change of the stress state in the product caused by the mismatch of the layers surrounding the interconnect system under the condition that the temperature TE is heated to a temperature greater than 150 degrees C. Based on this reason, A correct description of the stress transfer properties of the semiconductor package Ic packaged in a manner has not been obtained. In addition, the plastic composition of the outer frame 0 is also dissolved or softened, with the result that the stress caused by the plastic outer frame G is also caused by the same Reduced stress σ ,.

However, without these high temperatures of more than 150 degrees C, it is preferred that a type of reliability check that is generated by external heating ε ′ cannot be performed economically because they take months and often even years. Therefore, this task is based on the purpose of providing a device and method for measuring the stress transfer properties of the semiconductor module finally installed on the relevant frame of the product. Therefore, a sufficiently accurate assessment of the stress transfer properties is relatively short. Time is gained.

Page 200415739 V. Description of the invention (4) = According to the present invention, this object is related to the second item of the scope of patent application. , Characteristics, and method of transfer by applying the method of item 11 of the scope of patent application == force: the use of thermal devices' its stress structure in semiconductor modules and the two I structure = or directly approach the stress transfer in semiconductor modules The test I was completed to achieve the purpose of heating the stress transfer test structure in situ, the acceleration of 2 was used to reduce the test time, and the force caused by the relevant outer frame of the product was basically maintained unchanged. -Inter = structure f includes at least one of the first and second interconnection regions formed in the edge layer. Due to the stress, it is formed in the available interconnect layer of the semiconductor module, and the significance to the degree is exaggerated. 'About the stress transfer properties in the semiconductor module is the surface and / or volume of the first interconnecting region of the σ and / or the first and second; the time period is greater than the surface and / or volume of the interconnecting region over time. Step by step; dagger = ;; due to your work, the shore force of the reliability check surface and the direction of discrimination and reduction, due to the role of the enlarged table to enter a cow secret? The number of diffusible cavities also increased . Characteristic and statistical significance: 5 =: The measurement accuracy during the inspection of the nature of the shift and the second mutual test structure may have multiple first connections. α ° cheng, which is connected to each other in a chained manner through multiple connection regions. Page 8 200415739

， Ν κ 热 王 7 A solid heat transfer in the first or second interconnection area or connection area V. Description of the invention (5) Preferably, the internal heating device is formed in the at least reaction area The parent galvanic current passes through the heating mutual speed region. The structure of the structure to be inspected ^ Α ~ 付 is not heated effectively in the form of j; Bu is obtained, and the effects of electron transfer can be reliably excluded, especially when AC power is used. Bolt of cloth

Regarding the method for testing the stress transfer property, preferably, the above-mentioned force transfer test device is formed on a semiconductor module, and then the semiconductor mold = is mounted on a mold carrier T and packaged in a product-related frame, and finally “Thermal current” is applied to the integrated heating device, and a 'measurement voltage is applied to the stress transfer test structure and the current flowing through the stress transfer test structure is measured to detect the stress transfer properties of the semiconductor module. Way, for the first time, the corresponding stress transfer properties can be determined in a short enough time with high accuracy, as well as the relevant outer frame of the product, such as a plastic knee frame. Further advantageous details of the present invention are characterized by further The specific scope of the sub-application. The present invention is described in detail below with reference to related drawings and specific embodiments.

Figure 2> Simplified section view of the display device to detect stress transfer properties. The same reference numerals are used to represent the elements from the first to the first (: element of the figure) and repeated descriptions are omitted below.

According to the ^ 2 figure, according to the present invention, the final installation state and the related product frame of the famous product ^ packaged semiconductor module 1C (integrated circuit) should be / transfer properties (especially all belong to π soil & (Recognition of & (Μ, 疋, 又, 疋, 疋, 疋, 化, 疋, 疋, 化, 化, 疋, 疋, 化, 化, 疋, 化, 化, 化, 化, 化, 化, 化, 化, 化, 化, 属, 化, 化, 化, 属, 化, 化, 化 的)) reliability checks were performed. In the case of a general flip-chip frame G, in particular, mechanical

Page 9 200415739 V. Description of the invention (6) f Semiconductor module 1C is induced directly into the area generally called daggers. 'For this reason, they constitute an increase: d two services: the impact of this method being evaluated according to previous techniques. Based on 2 = risk. The temperature is measured by the stress transfer integrated in the semiconductor module 1 c, and it is integrated with the SMT or directly adjacent to it. The operating temperature at τ = τ operation, the temperature of which In order to be modified, the plastic material of the relevant frame G of the ini product can act on the semiconductor module 1C in a different way and also correspond to the corresponding mechanical support of the module carrier τ Ϊ. Also, in the second force transition body layer The main basic shore force dimension ^ ¥ body + material or wire connection and / or absolute stress, is held at a value that is not changed σ so that the stress detected by the SMT of the force transfer test structure or the corresponding stress α results as ·

σ = cr〇 + aG. Here, the in-situ heating of the force transfer test structure SMT is greater than 150 degrees c. However, it can be produced by the integrated heating device IH. In the range from 225 degrees C to 300 degrees C, / 里 度 # 乂 仏 is covered by set up. In this way, the description of the stress transfer properties of the semiconductor module 1C finally installed in the relevant frame of the product can be performed in a relatively short time, such as 100 to 2000 hours. Contrary to the conventional storage of the semiconductor module IC with the product-related frame G in the furnace f, the stress state of the frame is changed in an undesired manner, so that it is possible for the first time to test the approximate product to characterize it. Especially product

Page 10 200415739 V. Description of the invention (7) Stress transfer properties of metallization of bulk circuits. Fig. 3A shows a simplified plan view and Fig. 3 shows a perspective section view of the device / port section I-I according to the first exemplary embodiment according to the first exemplary embodiment according to Fig. 3a, again the same Reference symbols denote the same or corresponding elements and repeated descriptions are omitted below.

According to Figures M and 3B, the stress transfer test structure SMT has two first interconnect regions 1 on the first interconnect layer or metallized plane L1, which are formed optimally with conductor plates having a relatively large surface to receive machinery Stress and / or volume forming or providing voids. Three second interconnecting regions 2 are formed on the second interconnecting layer or metallization plane L 2, and the first interconnecting regions 丨 are electrically connected to each other by a connection region 3 called a contact hole or a through-hole. Therefore, the connection area 3 connects the first and second interconnection areas 1 and 2 through corresponding contact holes or through holes in the first insulating layer 丨 丨 located between the interconnection layers L 丨 and L2. In order to improve the sensitivity of the stress transfer test structure SMT, at least the surface and / or volume of the first interconnect region 1 is significantly larger than the surface and / or volume of the connection region 3, and the result is a material transfer caused by stress transfer , Or mainly acting on the voids of the connection region 3. The void formed by the stress transfer experience is represented by V in the connection region 3 (void).

In the stress transfer test structure SMT according to the first exemplary embodiment according to FIGS. 3A and 3B, the first interconnection region 1 has a surface that is significantly larger than the second interconnection region 2 and / or Volume, in this case, the second interconnection area may also have a correspondingly large surface and / or volume. However, in the illustrated exemplary embodiment, the second interconnection region is also significantly suitable for use as an internal heating device described later.

200415739 V. Description of the invention (8) According to Figures 3A and 3B, the stress transfer test structure SMT then includes a plurality of first interconnection regions 1 and a plurality of second interconnection regions 2, which are connected to each other in a chained manner by a plurality of connection regions 3. Connection, the interlocking structure produces a further improvement in the statistical importance of detecting stress transfer properties in semiconductor modules. For the purpose of heating the stress transfer test structure SMT in situ, in the first exemplary embodiment according to FIGS. 3A and 3B, an integrated heating device (the heating) of the interconnect structure type is formed in the first An interconnection region 1 and the second interconnection region 2 or the connection region 3 are outside. More precisely, according to FIG. 3B, as an example, the conductor strip IH1 structured in a zigzag pattern is formed on the second interconnect layer L2 lower than the first interconnect region 1 and on the second interconnect layer Between the areas 2, the conductor strip can be heated by Joule heating with a heating current. According to FIG. 3A, the heating current of the integrated heating device I Η1 below can be, for example, AC or DC a c / d c. Moreover, according to FIG. 3B, the upper integrated heating device IH2 can also be formed on the interconnect layer L3, which is separated by the second insulating layer I2 and is therefore located above the first interconnect layer L1. As an example, this heating device It can be structured again in a zigzag pattern. In this case, the heating system is operated by direct or alternating current in the same manner as in the case where the heating device ΙΠ is integrated below. IΗ1 and IΗ2 have polycrystalline semiconductor materials to particularly good thermal conductivity. Formula is used. The temperature below and above is generally higher than 150 ° C and relatively f-circle. As a result, the stress is transferred to the first interconnecting region 1 and does not need to be better. The integrated heating device and especially polycrystalline stone The result is obtained. However, the metal material can also be produced by the internal heating devices IΗ1 and I 及 2. The temperature shift from 25 ° C to 300 ° C can be optimally accelerated, especially in

200415739 V. Description of the invention (9) A method that causes a significant change in the stress in the semiconductor module, C, and in particular, the stress caused by the plastic frame G.乂 Especially when silicon is used as the semiconductor material of the semiconductor module Ic, the good thermal conductivity of silicon produces unique local heating, which is limited only by a very small area directly near the stress transfer test structure SMT, * FIG. 4A shows a simplified plan view and FIG. 1 shows a simplified perspective view of section 11-II along the first embodiment of the device for detecting stress transfer properties according to the first specific embodiment. The same reference symbols indicate The elements of 3A and ⑽ ^ are the same or correspond to elements and repeated descriptions are omitted below.

According to Figures 4A and 4B, the stress transfer test structure again has the same structure as the stress transfer test structure according to the first exemplary embodiment, but now the integrated heating device is directly formed on the stress transfer test structure SMT or Within. More precisely, according to the second embodiment, the heating device has an internal heating interconnection region 1} 1 in the at least first interconnection region 1 or the second interconnection region 2 or the connection region 3. Flow through the heated interconnect area. The heating current AC is preferably a high-ac power component, and it is more preferable to include only an AC power component. In this way, undesired electron transfer from the DC power plant can be prevented. This electron transfer will damage the measurement accuracy of the detection of the desired stress transfer properties. According to FIGS. 4A and 4B, the heating current AC is directly applied to the outermost second interconnection region 2 of the stress transfer test structure SMT formed in a chain manner through the connection region A. In this case, it is particularly known The illustrated structure of the second interconnect region 2 with their relatively small surface and / or volume and the use of the same type of interconnect material known, Joule heating is in principle at

Page 13 200415739 V. Description of the Invention (ίο) The second interconnecting region 2 occurs and the first interconnecting region ′ heats, but is heated by heat conduction. According to Figure 4B, the gap V once again occurs in this way due to the stress transfer in the special case, #appropriate, causing Erhai to be poor in the connection area 3, or in extreme cases, causing the connection to be interrupted. In the specific embodiment, the heating current also flows through the connection K. According to this second current AC, it should not contain any direct current as much as possible, and the damage caused by the heating shift. ’Avoiding the transfer due to electrons Φ Figure 5 shows a simplified plan view of the specific implementation of the third example. The same reference symbols = 4 components with the same or corresponding components are repeated in the following ^ 3. And in this case, the installation according to Fig. 5 may be exempted from a specific case, the internal heating device ih or the stress transfer test structure may be part of it. ^; However, contrary to Figures 4 A and 4 B, Wang Mulu lL γ 1 & shift test structure SMT contains the case of plus electric power A (: ,,,,,, and a case where the stress is turned, but Only the second and the first: the car and "by, heating via Joule heating" are connected to the heating current Ac. As a result, the structure is only added to the second interconnection area 2 between the brother-interconnection area i其, which is: the electrical penetration of the connection area or the through hole 3 can be avoided. Due to sufficient heat conduction, these directly adjacent interconnection areas 3 are sufficiently heated by the lower or second interconnection layer L2, In order to obtain a sufficiently accelerated stress transfer, the added ..., electricity / ^ _ac should be as far as possible not to contain any direct current components to avoid damage caused by electron transfer.

Page 14 200415739 V. Description of the invention (11) Provided separately for individual interconnections, and the interconnection or metallization materials can be used and / or aluminum can be used and connected to the area. Material, in this case, especially the copper area. The material of the interconnect layer and copper, aluminum or tungsten can be used as a coat for detecting the most distorting properties of the clams. Also, the semiconductor modules of the product-related outer frame should be individually added inside the above-mentioned tools. It is formed directly in the vicinity. It is formed in the semiconducting 髀 :: f '^ stress transfer structure T of the integrated heating device, the soft body, the body, and the 忒 semiconductor module is subsequently installed on the module. Luguan's outer frame is Λ into Λ crystal compared to V :: ... Phosphate Aβ is formed by the plastic injection molding method, and the plastic i is later. 1 This i is hardened, the actual reliability check is in the final installation state and half a month ago, first the heating current is applied to the integrated heating device, the stress transfer property of the semiconductor module is measured, and the electrical _ M Φ is colder than the stress transfer test structure and the mechanical breakdown measurement of the stress transfer test junction iy. In this way, the application of the heating current and the measurement of the voltage 2 can be performed simultaneously or temporarily separately from each other. This results in a further simplification of the test method and acceleration. The invention has been described above based on a semiconductor module packaged in a flip-chip frame, however, the invention is not limited to this and includes all further products in the same manner = relevant frames. In the same way, the stress transfer test structure is not limited to the type of the month, but in the same way includes all alternative types and junctions 2 f 4 stress transfer test structure within or directly adjacent to the integrated gating device is generated in situ heating. ...,

Page 15 200415739 Brief Description of Drawings Figures 1A to 1C show simplified section views to illustrate the conventional device and method for detecting the nature of stress transfer. Figure 2 shows a simplified section view to illustrate the device and method for detecting the stress transfer properties of a semiconductor module that is finally mounted on the relevant frame of the product. Figure 3A shows a simplified plan view of a device according to the first embodiment to detect stress transfer properties. Figure 3B shows a simplified perspective view of the device along section I-I according to Figure 3 A. Figure 4A shows a simplified plan view of a device according to a second embodiment to detect stress transfer properties. Figure 4B shows a simplified perspective view of the device along the sections I I-I I according to Figure 4 A. Figure 5 shows a simplified plan view of a device according to a third embodiment to detect stress transfer properties. Φ

Description of component symbols: 1 First interconnect area 3 Connection area 1C Semiconductor module T Module carrier G Product related frame IH, IH1, IH2 Integrated heating V Gap LI, L2, L3 Interconnect layer 2 Second interconnect area SMT Stress transfer test structure B Welded connection TG Test frame EH External heating AC / DC Heating current A Connection area 11, I 2 Insulation layer

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Claims (1)

200415739 6. Scope of patent application 1. A device for detecting the stress transfer property of a semiconductor module (IC) finally installed in a product-related outer frame (G), which has a stress transfer test structure (SMT) It is formed in the semiconductor module (IC) to achieve the purpose of detecting the nature of the stress transfer; and, an integrated heating device (II), which is in the stress transfer test structure (SMT) of the semiconductor module (IC) ) Or its immediate proximal end to heat the stress transfer test structure (SMT) in situ. … To 2. The device according to item 1 of the scope of patent application, wherein the stress transfer test structure (SMT) has at least one first interconnecting region (1) in the first interconnecting sound (L1), and at least one in A second interconnection region (2) of the second interconnection layer (L2), and at least one connection region (3) via a first insulation layer (I 1) formed between the interconnection layers (Li, [2) The interconnection areas (1, 2) are electrically connected. 3. The device according to item 2 of the scope of patent application, wherein the surface and / or volume of the first and / or the second interconnection region (1, 2) is significantly larger than the surface and / or volume of the connection region (3) . 4. The device according to one of the items 1 to 3 of the scope of patent application, wherein the relevant outer frame (G) of the product constitutes a plastic outer frame. 5. The device according to one of the items 2 to 4 of the scope of patent application, wherein the stress transfer test structure (SMT) has a plurality of first and second interconnection regions (1, 2), which are connected by a plurality of The zones (3) are connected to each other in a chained manner. 6 · The device according to one of items 2 to 5 of the patent scope of Shinsaki, wherein the integrated heating device (IH) is provided in the at least one first or second interconnection. Page 17 200415739 VI. Heating area (I Η1, ΙΗ2) outside the patent application area (1, 2) or the connection area (3) ′ A heating current (AC, DC) flows through the heating interconnection area . 7 · The device according to item 6 of the scope of patent application, wherein the heating interconnection area (IH1, IH2) is formed in the first interconnection layer (L1), the second interconnection layer (L2) or adjacent to the Other interconnect layers (L3) of the first or second interconnect area (1, 2). 8 · The device according to one of the items 2 to 5 of the scope of patent application, wherein the integrated heating device has a heating interconnection area (IH) on the at least one first or first interconnection area (1,2) or In the connection area (3), a heating current (AC) flows through the heating interconnection area (I η). 9 · The device according to item 8 of the scope of patent application, wherein the far heating current (A C) has a South AC power module. 10 · The device according to one of items 1 to 9 of the scope of patent application, wherein the integrated heating device (II) has polycrystalline silicon or metal and the semiconductor module (IC) has a silicon semiconductor material. 1 1 · A method for detecting the stress transfer properties of a semiconductor module (IC) finally installed in a product-related frame (G), with the following steps: a) Formed as in the first to tenth scope of the patent application One of the detection devices is in a semiconductor module (IC); b) the semiconductor module (IC) is installed on a module carrier (T); c) forming a semiconductor device (I c) surrounding the installed semiconductor module (I c) Product related frame (G); d) applying heating current (AC, DC) to the integrated heating device (I Η); and e) applying a measurement voltage to the stress transfer test structure (SMT) and measuring flow through 200415739 6. Scope of Patent Application " " The current of the stress transfer test structure (SMT) is used to detect the stress transfer property of the semiconductor module. 1 2 · The method according to item 11 of the scope of the patent application, wherein 'at step c)' a flip chip carrier is set as the module carrier (τ). 1 3 · The method according to one of items 11 to 12 of the scope of patent application, wherein 'at step c), a plastic injection molding method is performed. 14. A method according to one of claims 11 to 13 of the scope of the patent application, wherein, in step d), a heating current is applied to generate a local temperature greater than 150 ° C) and in particular from 225 ° C Temperature in the range of C to 300 degrees C (Ί \). 15 · The method according to one of the items 11 to 14 of the scope of patent application, wherein steps d) and e) can be performed simultaneously or temporarily separately from each other.