TW200414796A - Organic electroluminescence display device - Google Patents

Organic electroluminescence display device Download PDF

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Publication number
TW200414796A
TW200414796A TW092126685A TW92126685A TW200414796A TW 200414796 A TW200414796 A TW 200414796A TW 092126685 A TW092126685 A TW 092126685A TW 92126685 A TW92126685 A TW 92126685A TW 200414796 A TW200414796 A TW 200414796A
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Taiwan
Prior art keywords
organic
organic electroluminescence
display device
substrate
line
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TW092126685A
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Chinese (zh)
Inventor
Atsushi Yoshizawa
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Pioneer Corp
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Publication of TW200414796A publication Critical patent/TW200414796A/en

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

An organic electroluminescence display device has scanning lines and data lines intersecting apart from one another and power supply lines which are formed over a substrate; and light emitting units arranged in matrix near intersections of the scanning lines and data lines respectively, each including an organic electroluminescence element which includes a pair of opposing electrodes and an organic material layer including an organic light emission layer laminated between the pair of electrodes. The organic electroluminescence display device also has two or more switch circuits connected in parallel between the power supply line and each organic electroluminescence element to supply an electric power from the power supply line to the organic electroluminescence element in response to signals supplied thereto from the scanning line and the data line.

Description

200414796 玖、發明說明： 明戶斤頁】 發明領域 本發明有關一種有機電致發光顯示器裝置，其具有由 5 複數個規則排列的光發射單元所構成之一顯示器陣列，該 等光發射單元包括含有一由一有機電致發光材料薄膜製成 的光發射層之有機電致發光元件，該有機電致發光材料係 利用經由入射電子及電洞來發光之一有機化合物材料的電 致發光（下文稱為EL)。 10 【关^ lltr老L相e】 發明背景 一種包含矩陣式排列的複數個有機EL元件之有機el 頒不Is裝置因為可提供較低的耗電量、高的顯示品質及降 低的厚度，所以此顯示器裝置受人囑目。 15 有機EL元件已知係為一種自我發射元件且其譬如包含 一諸如玻璃板等透明基材，在透明基材上形成有一由稱為 IT〇的氧化銦錫製成之透明電極，且透明電極上係層疊設有 至少一有機材料層，諸如一有機電子運送層、一有機光發 射層、一有機電洞運送層及類似物、及一金屬電極。透明 20電極在其陽極施加一正電壓且在其陰極施加一負電壓時， =上累積一電荷。隨後，當電荷超過此元件固有的一障壁 電壓或-光發射臨限電壓，一電流開始流動，造成元件以 大致與此電流呈正比的強度發光。 基於有機EL元件的顯示面板係包括—簡單的矩陣顯示 5 面板，其具有簡單地以矩陣排列之有機肛元件；並包括— 主動矩陣顯示面板，其將-基於U體的驅動元件添加至 矩陣式排_各有機EL元件。主動矩陣㈣面板優於簡單 矩陣顯示面板之優點係為具有較低她電、較低的像素間 串擾及類似的其他性質，並特別適合大螢幕顯示器及高解 析顯示器。 一主動矩陣驅動式顯示器裝置在各光發射單元中採用 譬如由低溫多晶矽製成之一薄膜電晶體(丁 FT),所以經由交 換(switching)以逐一像素方式供應—電流來迫使有機EL元 件發光。 因為盈需要具有大顯示螢幕之有機EL顯示器裝置，低 溫多晶矽TFT可有效地使用於可供驅動主動矩陣顯示面板 之電晶體。 然而，當低溫多晶矽TFT應用在有機EL顯示器裝置時 ，遇到下列問題。譬如，除非大基材上之多晶矽維持極高 的效率百分比，光發射單元將漏失(dr〇p 〇ut)而造成產品具 有較低良率。並且，因為多晶矽TFT具有一多晶矽通道，其 在電性特徵方面表現出比單晶矽TFT更大的變異。因此，當 低 '溫多晶石夕TFT使用於主動矩陣驅動式有機EL顯示器裝置 的大尺寸顯示面板時，所產生的顯示器裝置難免較為昂貴。 【發明内容】 發明概要 因此，本發明之一目的係提供一種具有可以較高密度 製造且形成於一共同基材上的低溫多晶矽TFT及有機£乙元 200414796 件之有機EL顯示器裝置。 根據本發明的有機EL顯示器裝置包含彼此分開相交之 掃描線及資料線以及形成於一基材上方之電源供應線；及 光發射單元，其以矩陣式分別排列為接近掃描線與資料線 5 的交點，且其各包括一有機EL元件，該有機EL元件包括一 對相對電極及一有機材料層，該有機材料層包括一層疊於 該對電極之間的有機光發射層。有機EL顯示器裝置亦包括 兩或更多個交換電路，該等兩或更多個交換電路併聯式連 接於電源供應線與各有機EL元件之間，以回應從掃描線及 10 資料線供應的訊號自電源供應線將電力供應至有機EL元 件。 圖式簡單說明 第1圖為顯示根據本發明的一實施例之一有機EL顯示 器裝置的一顯示面板之組態的方塊圖； 15 第2圖為顯示根據本發明的實施例之有機EL顯示器裝 置中的一光發射單元之方塊電路圖； 第3圖為顯示根據本發明的實施例之有機EL顯示器裝 置中的光發射單元之一交換電路的電路圖； 第4圖為概括顯示根據本發明的另一實施例之一有機 20 EL顯示器裝置的一光發射單元之立體圖； 第5圖為概括顯示根據本發明的另一實施例之一有機 EL顯示器裝置的一光發射單元之部分切除立體圖。 t 方方式]1 較佳實施例之詳細說明 7 200414796 下文中，參照圖式描述本發明的實施例。200414796 (ii) Description of the invention: Field of invention] The present invention relates to an organic electroluminescence display device having a display array composed of five regularly arranged light emitting units, the light emitting units including An organic electroluminescence element of a light emitting layer made of a thin film of an organic electroluminescence material. The organic electroluminescence material is an electroluminescence of an organic compound material (hereinafter referred to as "luminescence") which emits light through incident electrons and holes. EL). 10 [OFF ^ lltr old L phase e] Background of the Invention An organic EL device including a plurality of organic EL elements arranged in a matrix arrangement is not an Is device because it can provide lower power consumption, high display quality, and reduced thickness. This display device is subject to orders. 15 An organic EL element is known as a self-emissive element and includes, for example, a transparent substrate such as a glass plate. A transparent electrode made of indium tin oxide called IT0 is formed on the transparent substrate, and the transparent electrode The upper layer is stacked with at least one organic material layer, such as an organic electron transport layer, an organic light emitting layer, an organic hole transport layer and the like, and a metal electrode. The transparent 20 electrode accumulates a charge when a positive voltage is applied to its anode and a negative voltage is applied to its cathode. Subsequently, when the charge exceeds a barrier voltage or -emission threshold voltage inherent in the element, a current starts to flow, causing the element to emit light at an intensity approximately proportional to the current. Organic EL element-based display panels include—a simple matrix display 5 panel with organic anal elements simply arranged in a matrix; and—an active matrix display panel that adds a U-based drive element to the matrix Row_each organic EL element. The advantages of active matrix display panels over simple matrix display panels are that they have lower power, lower inter-pixel crosstalk, and other similar properties, and are particularly suitable for large-screen displays and high-resolution displays. An active-matrix-driven display device uses, for example, a thin-film transistor (T-FT) made of low-temperature polycrystalline silicon in each light-emitting unit, so that an organic EL element is forced to emit light by switching-by-pixel supply current through switching. Because Yingying needs an organic EL display device with a large display screen, low-temperature polycrystalline silicon TFTs can be effectively used for transistors that can drive active matrix display panels. However, when a low-temperature polycrystalline silicon TFT is applied to an organic EL display device, the following problems are encountered. For example, unless polycrystalline silicon on a large substrate maintains a very high percentage of efficiency, the light emitting unit will miss (dropout) and cause the product to have a lower yield. And, because a polycrystalline silicon TFT has a polycrystalline silicon channel, it exhibits greater variation in electrical characteristics than a single crystal TFT. Therefore, when a low temperature polycrystalline TFT is used in a large-size display panel of an active matrix driving organic EL display device, the resulting display device is inevitably more expensive. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an organic EL display device having a low-temperature polycrystalline silicon TFT and an organic EL element which can be manufactured at a higher density and formed on a common substrate. The organic EL display device according to the present invention includes scanning lines and data lines separated from each other and a power supply line formed above a substrate; and light emitting units, which are arranged in a matrix form to be close to the scanning lines and the data lines 5, respectively. The intersections each include an organic EL element including a pair of opposing electrodes and an organic material layer. The organic material layer includes an organic light emitting layer laminated between the pair of electrodes. The organic EL display device also includes two or more switching circuits connected in parallel between the power supply line and each organic EL element in response to signals supplied from the scanning line and the 10 data lines. Power is supplied to the organic EL element from a power supply line. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a configuration of a display panel of an organic EL display device according to an embodiment of the present invention; FIG. 2 is a diagram showing an organic EL display device according to an embodiment of the present invention A block circuit diagram of a light emitting unit in FIG. 3 is a circuit diagram showing a switching circuit of one of the light emitting units in an organic EL display device according to an embodiment of the present invention; and FIG. 4 is a schematic diagram showing another one according to the present invention. A perspective view of a light emitting unit of an organic 20 EL display device according to one embodiment; FIG. 5 is a partially cutaway perspective view schematically showing a light emitting unit of an organic EL display device according to another embodiment of the present invention. t square method] 1 Detailed description of the preferred embodiment 7 200414796 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第1圖顯示根據一實施例之一主動矩陣驅動式有機EL 顯示器裝置。此顯示器裝置包含一顯示面板101 ; —位址驅 動器110 ; —資料驅動器120 ;及一控制器130。 5 如第1圖所示，顯示面板101包含以預定間隔平行地形 成之“n”(n為整數)個掃描線SL1 -SLn及以預定間隔平行地形 成之“m”(m為整數)個資料線DLl-DLm，其中掃描線及資料 線形成為彼此以一預定分隔彼此正交。顯示面板101進一步 包含nxm個光發射單元1〇2，各光發射單元形成於一對應於 10 一掃描線與一資料線的各交點之位置。各掃描線有一端連 接至位址驅動器110,而各資料線有一端連接至資料驅動器 120 〇 位址驅動器110依順序對於掃描線SLl-SLn逐一施加一 電壓。 資料驅動杰120對於資料線dl 1 -DLm施加一資料電壓 以從光發射單元1〇2發射光。 連接位址驅動器U〇及資料驅動器120之控制器130係 依據先刖供應的影像資料來控制位址驅動器11〇及資料驅 動器120的操作。 如第2圖所示，光發射單元102包含三個交換電路SW， 〇又換包路分別經由線Ssub、Dsub連接至掃描線SL及資料 、、東DL，並回應自掃描線乩及資料線DL供應的訊號經由一線 VSUbk 一電源供應線VccL將電力供應至有機EL元件15。三 、包路8%併聯式連接於電源供應線VccL與有機EL元 8 200414796 件15之間。 如第3圖所示，各交換電路sw&含一用於一選擇電晶 體之位址化低溫多” TFT u ;—驗_·鶴電晶體之驅 動低溫多晶石夕TFT 12，-電容器13，及—有機此元件15。FIG. 1 shows an active matrix driving organic EL display device according to an embodiment. The display device includes a display panel 101; an address driver 110; a data driver 120; and a controller 130. 5 As shown in FIG. 1, the display panel 101 includes “n” (n is an integer) scan lines SL1-SLn formed in parallel at a predetermined interval and “m” (m is an integer) formed in parallel at a predetermined interval. The data lines DL1-DLm, in which the scanning lines and the data lines are formed to be orthogonal to each other with a predetermined separation. The display panel 101 further includes nxm light emitting units 102, and each light emitting unit is formed at a position corresponding to each intersection of a scan line and a data line. One end of each scan line is connected to the address driver 110, and one end of each data line is connected to the data driver 120. The address driver 110 sequentially applies a voltage to the scan lines SL1-SLn one by one. The data driver 120 applies a data voltage to the data lines dl 1 -DLm to emit light from the light emitting unit 102. The controller 130 connected to the address driver U0 and the data driver 120 controls the operation of the address driver 11 and the data driver 120 based on the image data supplied by the driver. As shown in FIG. 2, the light emitting unit 102 includes three switching circuits SW, and the packet switching circuit is connected to the scanning lines SL and the data, and the east DL respectively through the lines Ssub and Dsub, and responds to the self-scanning lines 资料 and the data lines. The signal supplied by the DL supplies power to the organic EL element 15 via a first line VSUbk and a power supply line VccL. Third, the package circuit 8% is connected in parallel between the power supply line VccL and the organic EL element 8 200414796 15 pieces. As shown in FIG. 3, each of the switching circuits sw & includes a low-temperature polycrystalline TFT u for a selective transistor; __test_ · crane-crystal crystal-driven low-temperature polycrystalline TFT 12, capacitor 13 , And-organic this element 15.

5 第2及3圖中，位址化低溫多晶矽TFT 11具有一閘電極G ，其經由一線sSUb連接至掃描線SL&被供應一位址訊號， 亚具有-源電極S，其經由^Dsub連接至資料線dl且被 供應一資料訊號。位址化低溫多晶矽71^ u具有一汲電極D ，其連接至驅動低溫多晶矽TFT 12的一閘電極G，且連接至 1〇電容器13的一終端。驅動低溫多晶矽丁FT 12具有一源電極s ，其經由一線Vsub連同電容器13的另一終端一起連接至一 電源供應線VccL。驅動低溫多晶#TFT 12具有一汲電極β ，其經由一線out連接至有機EL元件15的一陽極，且有機 EL兀件15的一陰極連接至一共同電極c〇m。 15 如第2圖所示連接至各有機EL元件15的陰極之電源供 應線VccL及共同電極com係連接至一用來對其供電之電壓 供源。 現在描述此電路的一光發射控制操作，首先從第i圖所 示的位址驅動器將一 0N_電壓供應至交換電路⑽之位址化 2 0低溫多晶石夕T F Τ 11的閘電極G時，位址化低溫多晶石夕TF T i i 從源電極S將-對應於供應至源電極§的資料電麼之電流施 加至汲電極D。當位址化低溫多晶矽TFTU的閘電極：定 在-OFF·電Μ時，位址化低溫多晶石灯打u被截止，如一 般所述，造成位址化低溫多㈣TFT 電極d開啟。因 9 此，在一使低溫多晶矽TFT丨丨的閘電極G處於〇N_電壓之期 間中，電容器13被充電。橫越電容器13的電壓係供應至焉區 動低狐多晶矽丁!^ 12的閘電極〇，且其基於其閘電壓及從源 $電極S到汲電極D的源電壓被施加一電流，藉以經由線〇听 k成有機EL元件15發光。另一方面，當位址化低溫多晶石夕 TFT 11的閘電極D減小至〇FF_電壓時，位址化低溫多晶石夕 TFT 11開啟，同日寺驅動低溫多晶石夕tft ^經由累積在電容 器13上的電荷之輔助來維持閘電極G上的電壓，以保持一驅 動電流直到下讀描為止，所以有機队元件⑽維持光發 10射作用。 又 根據上述實施例，用於驅動有機£]^元件15之複數個交換 電路SW係併聯式連接於電源供應線VccL與有機el元件μ之 間，所以即便在製造過程中_用於_有彳紙顯示器裳置之大 基材上具有大量的TFT，有機EL元件15可藉由其餘TFT加以 15切換直到所有TFT在各光發射單元中同時失效為止，藉以降 低光發射單元漏失的發生率並改善產品的良率。 有機EL顯示器裝置的—大基材面板之製造方法係包含 -將-石夕膜塗覆在-玻璃基材上的步驟中之高溫。雖然對 於-使用非晶石夕的正常TFT基材以超過·。c的溫度進行此 2〇步驟，對於多晶石夕必須在⑽叱左右的更高溫度進行此步 驟’故需要昂貴的耐熱石英玻璃。 利用較低溫度塗覆-多晶石夕所製成者係為低溫多晶石夕 TFT。具體言之，#如利用—用於形成_的受激準分子雷 射而非利用-用於塗覆石夕膜的爐具或類似物來進行—種部 10 200414796 分加熱方法。因為矽經由局部加熱而瞬間融化及結晶，亦 即瞬間融化、冷卻下來及結晶，可防止基材受到加熱。利 用此方式，多晶矽膜可在低達600°C或更低或是45CTC或更 低之溫度形成。雖然隨後可使用任何方法來形成元件，譬 5如可合併使用濺鍵、EB氣相沉積、電阻加熱氣相沉積、CVD 列印及類似方法。雖然可藉由任意方法來進行圖案成形 言如可使用光姓刻、遮罩氣相沉積及類似方法。 對於低溫多晶矽TFT，譬如可使用光學玻璃或一玻璃 板與一塑膠板之一組合作為一基材。譬如，如第4圖所示， 1〇將一資料線LD及一掃描線SL佈線在一光學透明的玻璃基 材1中，將分別連接資料線LD與掃描線S1之線Dsub、Ssub 佈線成為導孔或通孔，且將四個各含有第3圖所示電路之交 換電路sw製作在這些線上方。較接近基材丨之有機EL元件 15的電極係由一種諸如IT〇等光學透明材料製成，且各交換 15電路SW配置於基材1上的有機EL元件15周圍。利用此方式 產生一種所謂底發射型有機EL顯示器裝置。 在一底閘型中，譬如，將一閘電極沉積在基材丨上、將 一閘絕緣膜沉積在閘電極上、將一低溫多晶矽膜沉積在閘 絕緣膜上'在低溫多晶矽膜上利用光微影術及蝕刻技術來 20形成一源電極及一汲電極使其彼此相對並隔開、且將一保 護膜及類似物沉積在電極上，藉以製造各位址化低溫多晶 矽TFT 11及驅動低溫多晶矽71^ 12。由於從閘電極將一電 場施加至源電極與汲電極之間，其間可形成一通道。 有機EL元件15由一像素電極、一有機材料層及一共同 11 电極:構成。雖然有機讨料層—般係由諸如— 、一琶崎科、—紐射層、 ^入射層 射層及類似物等複數個層所構成，其只至少:=子入 射層。有機材料層係依據以：要匕括光發 丨彩。 &先色以逐-像素方式產生色 的另-貫施例。如圖所示，兩個用於將電力== 叠方式設置基材1上’且可在其上以層 編號之構件亦：:Γ:,為第5圖中標示與第]至4圖同樣 同泰搞±/、 故省略其描述。此實施例中，一共 有機EL元件^由—光學透明材料形成。此結構可有利地增大 由轉15的面積，因此亦增大開叫_伽eratio)。5 In FIGS. 2 and 3, the addressed low-temperature polycrystalline silicon TFT 11 has a gate electrode G, which is connected to the scanning line SL & via a line sSUb, and is supplied with an address signal. The sub-source electrode S is connected via ^ Dsub. To the data line dl and a data signal is supplied. The addressed low-temperature polycrystalline silicon 71 ^ u has a drain electrode D, which is connected to a gate electrode G driving the low-temperature polycrystalline silicon TFT 12, and is connected to a terminal of the 10 capacitor 13. The driving low temperature polycrystalline silicon FT 12 has a source electrode s which is connected to a power supply line VccL via a line Vsub together with the other terminal of the capacitor 13. The driving low-temperature polycrystalline #TFT 12 has a drain electrode β connected to an anode of the organic EL element 15 through a line out, and a cathode of the organic EL element 15 is connected to a common electrode cm. 15 A power supply line VccL and a common electrode com connected to the cathode of each organic EL element 15 as shown in Fig. 2 are connected to a voltage supply source for supplying power thereto. Now, a light emission control operation of this circuit will be described. First, a 0N_ voltage is supplied from the address driver shown in Fig. I to the addressing of the switching circuit. The gate electrode G of the low temperature polycrystalline TF TF 11 At this time, the addressed low-temperature polycrystalline silicon TF T ii applies a current corresponding to the data electrode supplied to the source electrode § from the source electrode S to the drain electrode D. When the gate electrode of the addressed low-temperature polycrystalline silicon TFTU is set to -OFF · M, the addressed low-temperature polycrystalline silicon lamp u is turned off, as described above, causing the addressed low-temperature polycrystalline TFT electrode d to be turned on. Therefore, the capacitor 13 is charged while the gate electrode G of the low-temperature polycrystalline silicon TFT 丨 is at a voltage of ON. The voltage across the capacitor 13 is supplied to the gate electrode of the active low-poly polysilicon substrate 12 in the region, and a current is applied based on its gate voltage and the source voltage from the source electrode S to the drain electrode D, thereby passing Line 0 is heard, and the organic EL element 15 emits light. On the other hand, when the gate electrode D of the addressed low temperature polycrystalline silicon TFT 11 is reduced to a voltage of 0FF_, the addressed low temperature polycrystalline silicon TFT 11 is turned on, and the same day temple drives the low temperature polycrystalline silicon tft ^ The voltage on the gate electrode G is maintained through the assistance of the charge accumulated on the capacitor 13 to maintain a driving current until the next reading, so the organic element maintains a light emitting effect. According to the above embodiment, the plurality of switching circuits SW for driving the organic element 15 are connected in parallel between the power supply line VccL and the organic el element μ, so even in the manufacturing process _ 用 _ 有 彳The large substrate on the paper display has a large number of TFTs. The organic EL element 15 can be switched by the remaining TFTs 15 until all TFTs fail in each light emitting unit at the same time, thereby reducing the incidence of leakage of the light emitting unit and improving it. Product yield. The method for manufacturing a large substrate panel of an organic EL display device includes a high temperature in the step of applying a -shixi film to a glass substrate. Although for normal TFT substrates using amorphous stone, it exceeds ·. This step 20 is performed at a temperature of c, which must be performed at a higher temperature of about ⑽ 叱 for polycrystalline stones, so expensive heat-resistant quartz glass is required. The coatings made with the lower temperature coating-polycrystalline silicon are low-temperature polycrystalline silicon TFTs. Specifically, #if using—excitation excimer laser for forming—but not using—for stoves or the like for coating Shixi film—see Section 10 200414796 heating method. Because silicon is instantly melted and crystallized by local heating, that is, instantaneously melted, cooled down and crystallized, it can prevent the substrate from being heated. In this way, polycrystalline silicon films can be formed at temperatures as low as 600 ° C or lower or 45CTC or lower. Although any method can subsequently be used to form the element, such as a combination of sputtering, EB vapor deposition, resistance heating vapor deposition, CVD printing, and the like. Although the patterning can be performed by any method, for example, light engraving, mask vapor deposition, and the like can be used. For the low temperature polycrystalline silicon TFT, for example, optical glass or a combination of a glass plate and a plastic plate can be used as a substrate. For example, as shown in FIG. 4, a data line LD and a scanning line SL are wired in an optically transparent glass substrate 1, and the lines Dsub and Ssub connecting the data line LD and the scanning line S1 are wired into Vias or vias, and four switching circuits sw each containing the circuit shown in FIG. 3 are made over these lines. The electrode of the organic EL element 15 closer to the substrate 丨 is made of an optically transparent material such as IT0, and each of the switching 15 circuits SW is arranged around the organic EL element 15 on the substrate 1. In this way, a so-called bottom emission type organic EL display device is produced. In a bottom gate type, for example, a gate electrode is deposited on a substrate, a gate insulating film is deposited on the gate electrode, and a low temperature polycrystalline silicon film is deposited on the gate insulating film. 'Using light on the low temperature polycrystalline silicon film Lithography and etching technology are used to form a source electrode and a drain electrode opposite to each other and spaced apart, and a protective film and the like are deposited on the electrode to manufacture the low-temperature polycrystalline silicon TFT 11 and drive the low-temperature polycrystalline silicon. 71 ^ 12. Since an electric field is applied from the gate electrode between the source electrode and the drain electrode, a channel can be formed therebetween. The organic EL element 15 is composed of a pixel electrode, an organic material layer, and a common electrode. Although the organic soliciting layer is generally composed of a plurality of layers, such as-, Ipazaki,-button layer, incident layer, and the like, it only has at least: = sub-injection layer. The basis of the organic material layer is: to make light shine. & Alternatively, the first color produces a color on a pixel-by-pixel basis. As shown in the figure, the two components for setting the electric power == on the substrate 1 'and can be numbered on the layer are also :: Γ :, which is the same as that shown in Figure 5 and Figures 4 to 4. Tongtai engages in ± /, so its description is omitted. In this embodiment, the total organic EL element is formed of an optically transparent material. This structure can advantageously increase the area from turn 15 and therefore also increase the opening bid_gaeratio).

構成址化低溫多晶釘打及—驅動低溫多晶石夕TFT 15 之H父 構成之後，形成了 —亦作為賴絕緣膜 :化層20 ’但不包含與—像素電極⑸的—連接部Μ。 於右^換電路SW的粗财晶石夕丁打造成像素電極更容易對 平腼兀件的共同電極C〇m產生短路，平面化層20必須 ’地覆蓋住粗糙性。 2〇 六平面化層2〇構成之後，一像素電極形成於基材上以與 ς、電路sw連接’且可進一步形成—有機材料層及共同電 ^此完成-蝴曝㈣她咖裝置之顯 雖然上述實施例已經顯示用於驅動包含二個、三個及 陶電晶體的有機EL元件之最簡單結構，本發明亦可應用 12 200414796 在一使用五個或更多個電晶體之元件。 【圖式簡單說明3 第1圖為顯示根據本發明的一實施例之一有機EL顯示 器裝置的一顯示面板之組態的方塊圖； 5 第2圖為顯示根據本發明的實施例之有機EL顯示器裝 置中的一光發射單元之方塊電路圖； 第3圖為顯示根據本發明的實施例之有機EL顯示器裝 置中的光發射單元之一交換電路的電路圖； 第4圖為概括顯示根據本發明的另一實施例之一有機 10 EL顯示器裝置的一光發射單元之立體圖； 第5圖為概括顯示根據本發明的另一實施例之一有機 EL顯示器裝置的一光發射單元之部分切除立體圖。 【圖式之主要元件代表符號表】 11···位址化低溫多晶石夕TFT 130···控制器 12···驅動低溫多晶石夕TFT 13···電容器 15…有機EL元件 15a···像素電極 19…連接部 20…平面化層 101···顯示面板 102···光發射單元 110···位址驅動器 com···共同電極 D…汲電極 DL，DLl-DLm···資料線 G···閘電極 OUT，Ssub，Dsub，Vsub …線 S···源電極 SL，SLl-SLn…掃描線 SW···交換電路 V c c L…電源供應線 120··.資料驅動器 13After the formation of the addressing of the low temperature polycrystalline nail and driving of the low temperature polycrystalline silicon TFT 15, the parent structure of the TFT 15 is also formed-also as the insulating film: the insulating layer 20 'but does not include the-pixel electrode 连接-connection portion M . The coarse crystal spar of the switching circuit SW makes it easier for the pixel electrode to short-circuit the common electrode Cm of the flat element, and the planarization layer 20 must cover the roughness. After the formation of the 206 planarization layer 20, a pixel electrode is formed on the substrate to be connected to the circuit and the circuit sw 'and can be further formed-the organic material layer and the common electricity are completed-butterfly exposure Although the above embodiments have shown the simplest structure for driving an organic EL element including two, three, and ceramic crystals, the present invention can also be applied to a device using five or more transistors. [Brief Description of the Drawings 3] FIG. 1 is a block diagram showing a configuration of a display panel of an organic EL display device according to an embodiment of the present invention; 5 FIG. 2 is a diagram showing an organic EL according to an embodiment of the present invention A block circuit diagram of a light-emitting unit in a display device; FIG. 3 is a circuit diagram showing a switching circuit of one of the light-emitting units in an organic EL display device according to an embodiment of the present invention; and FIG. A perspective view of a light emitting unit of an organic 10 EL display device according to another embodiment. FIG. 5 is a partially cutaway perspective view showing a light emitting unit of an organic EL display device according to another embodiment of the present invention. [Representative symbol table of main elements of the figure] 11 ... Addressed low temperature polycrystalline TFT 130 ... Controller 12 ... Driving low temperature polycrystalline TFT 13 ... Capacitor 15 ... Organic EL element 15a ... Pixel electrode 19 ... Connection portion 20 ... Planarization layer 101 ... Display panel 102 ... Light emitting unit 110 ... Address driver com ... Common electrode D ... Drain electrode DL, DL1-DLm ··· Data line G ·· Gate electrode OUT, Ssub, Dsub, Vsub… Line S ··· Source electrode SL, SL1-SLn ... Scan line SW ··· Switching circuit V cc L ... Power supply line 120 ·· .Data Drive 13

Claims (1)

200414796 拾、申請專利範圍： 1. 一種有機電致發光顯示器裝置，包含： 彼此分開地交會之掃描線及資料線，及形成於一基 材上方之電源供應線；光發射單元，其分別矩陣式排列 5 為接近該等掃描線與資料線之交點且其各包括一有機 電致發光元件，該有機電致發光元件包括一對相對電極 及一有機材料層，該有機材料層包括一層疊在該對電極 之間的有機光發射層； 兩或更多個交換電路，其併聯式連接於該電源供應 10 線與各有機電致發光元件之間，以回應自該掃描線及該 資料線供應的訊號從該電源供應線將電力供應至該有 機電致發光元件。 2. 如申請專利範圍第1項之有機電致發光顯示器裝置，其 中該等交換電路各包含至少兩個低溫多晶矽薄膜電晶 15 體，及一電容器。 3. 如申請專利範圍第1項之有機電致發光顯示器裝置，其 中該等交換電路各包含： 一第一低溫多晶矽薄膜電晶體，其連接至該掃描線 及該肓料線， 20 一第二低溫多晶矽薄膜電晶體，其連接至該電源供 應線及該有機電致發光元件；及 一電容器，其連接至該第一低溫多晶矽薄膜電晶體。 4. 如申請專利範圍第1項之有機電致發光顯示器裝置，其 中該有機電致發光元件具有一在與該基材相對的一側 14 200414796 上藉由一光學透明材料製成之電極，且該等交換電路各 配置於該基材與該有機電致發光元件之間。 5.如申請專利範圍第1項之有機電致發光顯示器裝置，其 中該基材由一光學透明材料製成，該有機電致發光元件 5 具有一較接近該由一光學透明材料製成的基材之電極 ，且該等交換電路各在該基材上配置於該有機電致發光 元件周圍。 15200414796 Scope of patent application: 1. An organic electroluminescence display device comprising: scanning lines and data lines which are separated from each other, and a power supply line formed over a substrate; light emitting units, which are respectively of a matrix type Arrangement 5 is close to the intersections of the scan lines and data lines and each includes an organic electroluminescence element. The organic electroluminescence element includes a pair of opposing electrodes and an organic material layer. The organic material layer includes a layer stacked on the Organic light emitting layer between counter electrodes; two or more switching circuits connected in parallel between the power supply 10 line and each organic electroluminescence element in response to the supply from the scan line and the data line The signal supplies power from the power supply line to the organic electroluminescence element. 2. For example, the organic electroluminescence display device according to the scope of the patent application, wherein each of the switching circuits includes at least two low-temperature polycrystalline silicon thin film transistors and a capacitor. 3. For the organic electroluminescence display device according to item 1 of the patent application scope, wherein the exchange circuits each include: a first low temperature polycrystalline silicon thin film transistor connected to the scan line and the material line, 20 a second A low temperature polycrystalline silicon thin film transistor is connected to the power supply line and the organic electroluminescent element; and a capacitor is connected to the first low temperature polycrystalline silicon thin film transistor. 4. The organic electroluminescence display device according to item 1 of the patent application scope, wherein the organic electroluminescence element has an electrode made of an optically transparent material on the side 14 200414796 opposite to the substrate, and The switching circuits are each disposed between the substrate and the organic electroluminescent device. 5. The organic electroluminescence display device according to item 1 of the application, wherein the substrate is made of an optically transparent material, and the organic electroluminescent element 5 has a substrate closer to the substrate made of an optically transparent material. Material electrodes, and the exchange circuits are each disposed around the organic electroluminescent element on the substrate. 15
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