TW200408079A - White led package - Google Patents

White led package Download PDF

Info

Publication number
TW200408079A
TW200408079A TW091132652A TW91132652A TW200408079A TW 200408079 A TW200408079 A TW 200408079A TW 091132652 A TW091132652 A TW 091132652A TW 91132652 A TW91132652 A TW 91132652A TW 200408079 A TW200408079 A TW 200408079A
Authority
TW
Taiwan
Prior art keywords
emitting diode
light emitting
patent application
white light
scope
Prior art date
Application number
TW091132652A
Other languages
Chinese (zh)
Other versions
TW564535B (en
Inventor
Peggy Wang
Original Assignee
Acme Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acme Technologies Ltd filed Critical Acme Technologies Ltd
Priority to TW091132652A priority Critical patent/TW564535B/en
Application granted granted Critical
Publication of TW564535B publication Critical patent/TW564535B/en
Publication of TW200408079A publication Critical patent/TW200408079A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)

Abstract

A white LED package comprises a carrier, an adhesive layer having fluorescence particles therein, a LED chip, a bonding wire, a fluorescence layer and an encapsulation layer. The adhesive layer is disposed on the carrier; the LED chip is disposed on the adhesive layer; two electrodes of the LED chip electrically connect with the carrier; the bonding wires electrically connect between the electrodes and the carrier; the fluorescence layer encapsulates the LED chip and the adhesive layer; and the encapsulation layer encapsulates a portion of the carrier, the fluorescence layer and the LED chip.

Description

ZUU4U5U/y 五、發明說明（1) 發明領域 本發明 是有關於一 先前技^ 近幾年 得發光二才虽 例如需要高 前光源汽車 裝置等。發 如體積小、 時沒有熱輻 (省電）等 發光二極體 體0 是有關於一種發光二極體之封裝結構，且特別 種白光發光二極體之封裝結構。 來由於發光二極體的發光效率不斷提升，使 體在某些領域已漸漸取代日光燈與白熱燈泡， 速反應的掃描器燈源、液晶顯示器的背光源或 的儀表板照明、交通號誌燈，以及一般的照明 極體與傳統燈泡比較具有絕對的優勢，例 哥命長、低電壓/電流驅動、不易破裂、發光 射、不含水銀（沒有污染問題）、發光效率佳 特丨生。以今日的生產技術與應用而言，在各種 的色系中，最令人注目的莫過於白光發光二極 由兩種以上处種多顏色的混合光，人眼所見的白光至少係 的二波長白朵長的色光所形成，如藍、黃色光混合而獲得 長白光。目I，或是由紅、綠、藍色光混合而獲得的三波 種：（1)以乡則製作白光發光二極體的方式大致有下列三 長型），並、、綠、藍光三個發光二極體晶片搭配（三波 生均勻的白2由調整通過三個發光二極體晶片的電流以產 生產成本也^此種方式具有报高的發光效率，但相對的 搭配（二波又阿，（2)以藍光與黃光兩個發光二極體晶片 的雷户以#長型），並藉由調整通過兩個發光二極體晶片 …以產生均勾的白光，此種方式具有不錯的發光效ZUU4U5U / y V. Description of the invention (1) Field of the invention The present invention is related to a prior art ^ In recent years, it has to emit two light sources, for example, it requires a high front light source automobile device. Light emitting diodes such as small size and no heat radiation (power saving) are related to the packaging structure of a light emitting diode, and especially a packaging structure of a white light emitting diode. Since the luminous efficiency of light-emitting diodes has continued to improve, the body has gradually replaced fluorescent lamps and incandescent bulbs in some fields, fast-responding scanner light sources, backlights for LCD monitors or instrument panel lighting, and traffic lights. And the general lighting polar body has absolute advantages compared with traditional light bulbs, such as long life, low voltage / current drive, not easy to break, light emission, non-mercury (no pollution problems), and good luminous efficiency. In terms of today's production technology and applications, among the various color systems, the most striking thing is that the white light emitting diode is composed of more than two kinds of mixed colors, and the white light seen by the human eye has at least two wavelengths. It is formed by long white colored light, such as blue and yellow light mixed to obtain long white light. Head I, or three wave types obtained by mixing red, green, and blue light: (1) The method of making white light-emitting diodes in the country is roughly the following three long types), and three light emission: green, blue, and blue. Diode chip matching (three waves of uniform white 2 by adjusting the current through three light-emitting diode chips to generate production costs ^ This method has high luminous efficiency, but the relative matching (two waves and Ah, (2) The two light-emitting diode wafers with blue and yellow light are used as long-length LEDs, and the two light-emitting diode wafers are adjusted through the adjustment to produce uniform white light. This method has a good effect. Luminous effect

9629twf.ptd 第5頁 200408079 五、發明說明（2) 率，且生產成本較低，以及（3)以一個藍光二極體所產生 的藍光為基礎’激發黃色螢光體產生黃光，並藉由混光的 方式產生白光’此種方式生產容易、發光效率較低，但成 本也較低。因此，目前大部分的白光發光二極體皆採用藍 光激發黃色螢光體的模式來產生白光。 1 第1圖繪示為習知白光發光二極體之封裝結構示意 圖。請參照第1圖，習知白光發光二極體之封裝主要係由 封裝接腳100、發光二極體晶片11〇、黏著層114、焊線 1 1 6a、焊線1 1 6b、螢光層1 1 8以及封裝膠體1 22所構成。其 中，封裝接腳1 0 0例如係由一第一接腳丨〇 2以及第二接腳 104所構成。第一接腳〇2頂端例如具有一承載座1〇6，且 承載座1 0 6中具有一晶片容納空間1 〇 8，此晶片容納空間 1 0 8例如係為一凹杯型態，其適於配置發光二極體晶片 110 ° 發光二極體晶片1 10具有電極丨12，通常為陰極、陽極 兩電極。發光二極體晶片1 1 〇通常係藉由黏著層丨丨4貼附於 承載座106的晶片谷納空間内，且發光二極體晶片 上之電極112例如分別藉由焊線U6a、焊線11 6b與第一接 腳102、第二接腳1〇4電性連接。 螢光層1 1 8配置於晶片容納空間1 〇 8中，以覆蓋住發光 二極體晶片110、黏著層114以及部份的焊線116a、U6b。 螢光層118中具有螢光體120，螢光層118例如為環氧樹脂 等材質，而螢光體120例如為YAG等黃色螢光物質。此外， 封裝膠體1 2 2係用以將部份的封裝腳架丨〇 〇、發光二極體晶9629twf.ptd Page 5 200408079 V. Description of the invention (2) The rate and low production cost, and (3) Based on the blue light produced by a blue light diode, 'stimulates the yellow phosphor to generate yellow light, and borrows Generate white light by mixing light 'This method is easy to produce and has low luminous efficiency, but the cost is also low. Therefore, most white light emitting diodes currently use white light to excite yellow phosphors to generate white light. 1 Figure 1 shows a schematic diagram of the packaging structure of a conventional white light emitting diode. Please refer to Figure 1. The conventional white light emitting diode package is mainly composed of package pin 100, light emitting diode chip 110, adhesive layer 114, bonding wire 1 1 6a, bonding wire 1 1 6b, and fluorescent layer. 1 1 8 and encapsulant 1 22. The package pin 100 is composed of a first pin 104 and a second pin 104, for example. The top of the first pin 〇2 has, for example, a carrier seat 106, and the carrier seat 106 has a wafer accommodating space 108. The wafer accommodating space 108 is, for example, a concave cup type, which is suitable for The light-emitting diode wafer 110 is arranged at an angle of 110 °, and the light-emitting diode wafer 1 10 has electrodes, usually two electrodes, a cathode and an anode. The light-emitting diode wafer 1 1 0 is usually attached to the wafer valley space of the carrier 106 through an adhesive layer. The electrode 112 on the light-emitting diode wafer is, for example, a bonding wire U6a and a bonding wire, respectively. 11 6b is electrically connected to the first pin 102 and the second pin 104. The fluorescent layer 1 18 is disposed in the wafer accommodating space 108 so as to cover the light emitting diode wafer 110, the adhesive layer 114, and a part of the bonding wires 116a and U6b. The phosphor layer 118 includes a phosphor 120. The phosphor layer 118 is made of, for example, an epoxy resin, and the phosphor 120 is made of, for example, a yellow fluorescent substance such as YAG. In addition, the encapsulation gel 1 2 2 is used to convert part of the encapsulation tripod and light emitting diode crystal.

9629twf.ptd 第6頁 200408079 五、發明說明（3) 片110、黏著層114、焊線116a、焊線ii6b以及螢光層118 包覆’並使得第一接腳102與第二接腳〗〇4由封裝膠體122 的底部伸出。 ' 習知白光發光二極體之封裝結構中，黏著層通常係採 用環氧樹脂等透明材質，其具有優良的黏著特性，但對 以『螢光體激發』產生白光的效率並無助益。目前此切 的白光發光二極體的發光效率僅約15 lin/w左右，盘_ 長型或三波長型的白光發光二極體相較，其發光效率一偏皮 發明概要 另士 έ士發明的9的在提出一種白光發光二極體之4 Γ冓，可進-步地提昇『螢光體激發』產生白光的；- 封裝出-種白光發光二極體之 光二極體晶片、螢光声^ =雜有螢光體的黏著層、發 層係配置於承載器上乂=:體所構成。其中，黏著 於承載器上，且發光二‘ 7:體晶片係藉由黏著層配置 與承載器電性連接；營；電㉟，這些電極係 體晶片包覆於内。 载即、螢光層以及發光二極 本實施例中，承恭哭 例如係由一第一接腳以及：=是：封裝腳架，⑯封裝腳架9629twf.ptd Page 6 200408079 V. Description of the invention (3) The sheet 110, the adhesive layer 114, the bonding wire 116a, the bonding wire ii6b, and the fluorescent layer 118 are covered and made the first pin 102 and the second pin. 4 protrudes from the bottom of the encapsulant 122. '' In the packaging structure of the conventional white light emitting diode, the adhesive layer is usually made of transparent materials such as epoxy resin, which has excellent adhesion characteristics, but it is not helpful for the efficiency of white light generated by "fluorescence excitation". At present, the luminous efficiency of this cut white light emitting diode is only about 15 lin / w. Compared with the long- or three-wavelength type white light emitting diode, its luminous efficiency is more skewed. 9 of 9 is proposing a white light-emitting diode 4 Γ 冓, which can further increase the "fluorescence excitation" to produce white light;-encapsulated-a kind of white light-emitting diode light-emitting diode chip, fluorescent light Sound ^ = Adhesive layer mixed with phosphor, hair layer is arranged on the carrier 乂 =: body. Among them, it is adhered to the carrier, and the light-emitting two '7: body chip is electrically connected to the carrier through the configuration of the adhesive layer; the electrode; the electrode system body chip is covered inside. Load, fluorescent layer and light emitting diode In this embodiment, Cheng Gong cries, for example, by a first pin and: = Yes: a package foot, a package foot

第一接腳所禮A。甘rK 200408079 五、發明說明（4) —-- 間:此晶片容納空間例如係為一凹杯蜇態，其適於配置發 光一極體晶片。此外，發光二極體晶片上之電極例如是藉 由焊線或是其他方式與第一接腳、第二接腳電性連接。 本實施例中，承載器例如是一印刷電路板，此印刷電 路板上例如具有兩個與發光二極體晶片之電極對應的接 點，以使得發光二極體晶片之電極能夠藉由焊線或是其 方式與接點電性連接。 、 本實施例中，承載器例如是一印刷電路板，此印刷 路板上具有一晶片容納空間以及二接點，晶片容納空間 於配置I光一極體晶片，且電極彳列茹係藉由焊 本 接腳所 電極例 電路板 本 接腳所 及二接 極例如 印刷電 本 著層中 外，螢 的螢光 貫施例 構成。 如是藉 底部伸 實施例 構成。 點，晶 係藉由 路板底 實施例 所摻雜 光層之 體例如 中，承載器例如是由一印刷電路板以及多個 其中’印刷電路板上具有二接點，且 由焊線與接點電性連接；接腳例如係由印刷 出，且與上述之接點電性連接。 中，承載器例如是由一印刷電路板以及多 其中，印刷電路板上具有一晶片容納空間 片容納空間適於配置發光二極體晶片，且 焊線與上述之接點電性連接；接腳例如係 部伸出’且與上述之接點電性連接。 、 中，黏著層之材質例如為環氧樹脂，而 的螢光體例如為YAG等黃色螢光物質，。/ 材質例如為環氧樹脂，而此螢光層中所 為YAG等黃色螢光物質。 ’滩The first pin is a gift A. Gan rK 200408079 V. Description of the invention (4) ---: The wafer accommodating space is, for example, a concave cup, which is suitable for arranging a light emitting polar wafer. In addition, the electrodes on the light-emitting diode chip are electrically connected to the first pin and the second pin, for example, by bonding wires or other methods. In this embodiment, the carrier is, for example, a printed circuit board. The printed circuit board has, for example, two contacts corresponding to the electrodes of the light-emitting diode wafer, so that the electrodes of the light-emitting diode wafer can be connected by bonding wires. Or its way is electrically connected with the contact. In this embodiment, the carrier is, for example, a printed circuit board. The printed circuit board has a wafer receiving space and two contacts. The wafer receiving space is configured with an I-light polar wafer, and the electrode array is soldered by soldering. The electrode of this pin is an example of a circuit board. The pin and the second electrode of this pin are, for example, printed and printed layers. If it is based on the embodiment of the bottom extension. For example, the crystal system is doped with a light layer doped by an embodiment of the circuit board. For example, the carrier is composed of a printed circuit board and a plurality of printed circuit boards. The points are electrically connected; the pins are, for example, printed and electrically connected to the above-mentioned contacts. The carrier includes, for example, a printed circuit board and a plurality of printed circuit boards. The printed circuit board has a wafer accommodating space. The wafer accommodating space is suitable for arranging a light emitting diode chip, and the bonding wire is electrically connected to the above-mentioned contact; For example, the tie portion protrudes and is electrically connected to the above-mentioned contact. The material of the adhesive layer is, for example, epoxy resin, and the phosphor is, for example, yellow fluorescent substance such as YAG. / The material is, for example, epoxy resin, and this fluorescent layer contains yellow fluorescent substances such as YAG. 'beach

9629twf.ptd 第8頁 200408079 五、發明說明（5) 本實施例中，發光二極體晶片係為一具有藍寶石基底 的藍光發光二極體晶片，此透光之藍寶石基底允許藍光發 光二極體晶片所放射出的光線通過，並激發黏著層中的黃 色螢光物質，進而提昇白光的發光效率。 為讓本發明之上述目的、特徵、和優點能更明顯易 懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說 明如下： 圖式之標示說明 100 封裝腳架 102 第一接腳 104 第二接腳 106 承載座 108 晶片容納空間 110 發光二極體晶片 112 電極 1 1 4、2 0 0 :黏著層 1 1 6a、1 1 6b :焊線 118 :螢光層 120、202 :螢光體 1 2 2 :封裝膠體 3 0 0、400 :承載器 3 0 2、4 0 2 :印刷電路板 302a、402a :晶片容納空間 3 0 4、4 0 6 :接點9629twf.ptd Page 8 200408079 V. Description of the Invention (5) In this embodiment, the light emitting diode wafer is a blue light emitting diode wafer with a sapphire substrate. The transparent sapphire substrate allows the blue light emitting diode. The light emitted by the wafer passes through and excites the yellow fluorescent substance in the adhesive layer, thereby improving the luminous efficiency of white light. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed descriptions as follows: One pin 104, second pin 106, carrier base 108, wafer receiving space 110, light emitting diode wafer 112, electrode 1 1 4, 2 0 0: adhesive layer 1 1 6a, 1 1 6b: bonding wire 118: fluorescent layer 120, 202: Phosphor 1 2 2: Encapsulant 3 0 0, 400: Carrier 3 0 2, 4 0 2: Printed circuit board 302a, 402a: Wafer housing space 3 0 4, 4 0 6: Contact

9629twf.ptd 第9頁 200408079 五、發明說明（6) 306、408 :發光二極體晶片 308、410 :電極 3 1 〇、4 1 2 :黏著層 312、318、414、420 :螢光體 3 1 4、4 1 6 :焊線 316、418 :螢光層 320、422 :封裝膠體 4 0 4 :接腳 弟一實施例 第2圖繪示為依照本發明第一實施例白光發光二極體 之封裝結構示意圖。請參照第2圖，本實施例白光發光二 極體之封裝主要係由封裝接腳1〇〇、發光二極體晶片11()、 黏著層200、焊線ii6a、焊線116b、螢光層118以及封裝膠 體1 2 2所構成。其中，封裝接腳丨〇 〇例如係由一第一接腳 1 0 2以及第二接腳丨〇 4所構成。第一接腳丨〇 2頂端例如具有 一承載座1 0 6，且承載座1 〇 6中具有一晶片容納空間丨〇 8， 此晶片容納空間丨〇8例如係為一凹杯型態，其適於配置發 光二極體晶片11 〇 〇 x 發光二極體晶片11 〇具有電極丨i 2，通常為陰極、陽極 兩電極。發光二極體晶片110係藉由黏著層200貼附於承 座106的晶片容納空間1〇8内，且發光二極體晶片11〇上之 電極1 1 2例如分別藉由焊線11 6a、焊線11 6b與第一接腳 1 〇 2、第二接腳1 〇 4電性連接。 值知注意的是，本實施例所使用的黏著層2 〇 〇中摻雜9629twf.ptd Page 9 2004079 V. Description of the invention (6) 306, 408: Light-emitting diode wafers 308, 410: Electrodes 3 1 0, 4 1 2: Adhesive layers 312, 318, 414, 420: Phosphor 3 1 4, 4 1 6: bonding wires 316, 418: fluorescent layers 320, 422: encapsulants 4 0 4: one embodiment of a pin 2 The second figure shows a white light emitting diode according to the first embodiment of the present invention Schematic diagram of the package structure. Please refer to FIG. 2. The package of the white light emitting diode in this embodiment is mainly composed of the package pin 100, the light emitting diode chip 11 (), the adhesive layer 200, the bonding wire ii6a, the bonding wire 116b, and the fluorescent layer. 118 and encapsulating gel 1 2 2. The package pin 丨 〇 〇 is, for example, composed of a first pin 102 and a second pin 〇 04. The top of the first pin 丨 〇2 has, for example, a carrier seat 106, and the carrier seat 106 has a wafer accommodating space. This wafer accommodating space is, for example, a concave cup type. Suitable for arranging a light-emitting diode wafer 1 100x The light-emitting diode wafer 1 10 has an electrode i 2, usually two electrodes, a cathode and an anode. The light emitting diode wafer 110 is attached to the wafer accommodating space 108 of the holder 106 through the adhesive layer 200, and the electrodes 1 1 2 on the light emitting diode wafer 110 are, for example, by bonding wires 116 The bonding wire 11 6b is electrically connected to the first pin 102 and the second pin 104. It is important to note that the adhesive layer 2000 used in this embodiment is doped in

9629twf.ptd9629twf.ptd

200408079200408079

五、發明說明（7) 有螢光體202，黏著層200的材質例如為環氧樹脂等黏著特 性良好的材質，而螢光體2 0 2例如為γ a G等黃色螢光物質: 螢光層11 8配置於晶片容納空間1 〇8中，以覆蓋住發光 二極體晶片1 1 0、黏著層200以及部份的焊線1丨6a、u 6b。 ，光層118中具有螢光體120，螢光層118例如為環氧樹脂 等材質，而螢光體120例如為YAG等黃色螢光物質。此外， 封裝膠體122係用以將部份的封裝腳架丨00、發光二極體晶 片1 1 〇、黏著層2 0 0、焊線11 6 a、焊線11 6 b以及螢光層1J 8 匕覆’並使付苐一接腳102與第二接腳1〇4由封裝膠體122 的底部伸出。 ^ ，然而，熟習該項技術者應知，本發明中使用摻雜有螢 光體之黏著層的作法並不限定使用於上述之封裝結構中， f使用黏著層作為晶粒貼附的前提下，本發明可應用於任 I可以『逢光體激發』方式產生白光的的封裝結構。以下， ^針對本發明應用於不同封裝型態上之實施方式進行說 ^ 如第二實施例、第三實施例所述。 一 η第3圖與第4圖繪示為依照本發明第二實施例白光發光 一 ♦體之封I結構示意圖。請參照第3圖，本實施例與第 二施例的觀念相類似，但本實施例所採用的承載器300 g、加印刷電路板3 〇 2，本實施例之白光發光二極體之封裝 P术構於此印刷電路板3 0 2上。 300本<實、施例白光發光二極體之封裝主要係由承載器 發光二極體晶片3 0 6、黏著層3 1 0、焊線3 1 4、螢光層V. Description of the invention (7) There is a phosphor 202, and the material of the adhesive layer 200 is, for example, a material with good adhesion characteristics such as epoxy resin, and the phosphor 2 0 2 is, for example, a yellow fluorescent substance such as γ a G: fluorescent The layer 118 is disposed in the wafer accommodating space 108, so as to cover the light emitting diode wafer 110, the adhesive layer 200, and a part of the bonding wires 116a, 6b. The light layer 118 includes a fluorescent body 120. The fluorescent layer 118 is made of a material such as epoxy resin, and the fluorescent body 120 is made of a yellow fluorescent material such as YAG. In addition, the encapsulant 122 is used to part of the encapsulation tripod, 00, the light emitting diode chip, 1 10, the adhesive layer, 200, the bonding wire, 11 6 a, the bonding wire, 1 6 b, and the fluorescent layer, 1J 8 Dagger cover 'and make the first pin 102 and the second pin 104 extend from the bottom of the encapsulant 122. ^ However, those skilled in the art should know that the method of using the phosphor-doped adhesive layer in the present invention is not limited to use in the above-mentioned packaging structure. F Under the premise that the adhesive layer is used for die attach The present invention can be applied to any packaging structure that can generate white light in the "excitation of light body" mode. In the following, the embodiments of the present invention applied to different package types will be described ^ as described in the second embodiment and the third embodiment. Figures 3 and 4 are schematic diagrams of the structure of the body seal I according to the second embodiment of the present invention. Please refer to FIG. 3. This embodiment is similar to the concept of the second embodiment, but the carrier used in this embodiment is 300 g, and the printed circuit board 3 002 is added. The white light emitting diode package of this embodiment P technique is constructed on this printed circuit board 3 02. The package of 300 books &examples; white light emitting diode is mainly composed of a carrier, a light emitting diode wafer 3 0 6, an adhesive layer 3 1 0, a bonding wire 3 1 4, a fluorescent layer

第11頁 200408079 五、發明說明（8) "—-- 316以及封裝膠體320所構成。其中，承載器3〇〇例如為一 表面具有接點304之印刷電路板302。發光二極體晶片3〇6 具有電極308，通常為陰極、陽極兩電極。發光二極體晶 片3 0 6係藉由摻雜有螢光體312之黏著層31〇貼附於印刷電 ，板302上，且發光二極體晶片3〇6上之電極3〇8例如分別 藉由悍線3 1 4與印刷電路板3 〇 2上的接點3 〇 4電性連接。 本貝施例中，黏著層3 1 〇的材質例如為環氧樹脂等黏 著特性良好的材質’而螢光體31 2例如為γ a G等黃色螢光物 質。 、 螢光層3 1 6配置於印刷電路板3 〇 2上，以覆蓋住發光二 極體晶片3 0 6、黏著層3 1 0以及部份的焊線3丨4。螢光層3 j 6 中具有螢光體318，螢光層316例如為環氧樹脂等材質，而 螢光體318例如為YAG等黃色螢光物質。此外，封裝膠體 3 2 0係用以將部份的印刷電路板3 〇 2、發光二極體晶片 306、黏著層310、焊線314以及螢光層316包覆於内。 接著請參照第4圖’本圖中為提昇白光發光二極體的 聚光效果，故於印刷電路板3 〇 2中設置一晶片容納空間 3 0 2 a ’此晶片容納空間3 〇 2 a例如係為一凹杯型態，其適於 配置發光二極體晶片3 0 6。此外，基於聚光效果的考量， 晶片容納空間3 0 2 a的側壁上可選擇性的鐘製一些反射膜 層。 第三實施， 第5圖與第6圖繪示為依照本發明第三實施例白光發光 二極體之封裝結構示意圖。請參照第5圖，本實施例所採Page 11 200408079 V. Description of the invention (8) " --- 316 and encapsulating gel 320. The carrier 300 is, for example, a printed circuit board 302 with a contact 304 on a surface. The light emitting diode wafer 306 has an electrode 308, which is usually a cathode and an anode. The light emitting diode wafer 3 06 is attached to the printed circuit board 302 through an adhesive layer 31 doped with a phosphor 312, and the electrodes 3 08 on the light emitting diode wafer 3 06 are, for example, respectively The wire 3 1 4 is electrically connected to the contact 3 04 on the printed circuit board 3 02. In this example, the material of the adhesive layer 3 1 0 is, for example, a material with good adhesive properties such as epoxy resin ', and the phosphor 3 12 is, for example, a yellow fluorescent material such as γ a G. The fluorescent layer 3 1 6 is arranged on the printed circuit board 3 02 to cover the light-emitting diode wafer 3 06, the adhesive layer 3 1 0 and a part of the bonding wires 3 4. The fluorescent layer 3 j 6 includes a phosphor 318. The fluorescent layer 316 is made of a material such as epoxy resin, and the phosphor 318 is made of a yellow fluorescent material such as YAG. In addition, the encapsulant 3 2 0 is used to cover a part of the printed circuit board 3 2, the light emitting diode wafer 306, the adhesive layer 310, the bonding wire 314, and the fluorescent layer 316. Next, please refer to FIG. 4 'In this figure, in order to improve the light-condensing effect of the white light emitting diode, a wafer receiving space 3 0 2 a is provided in the printed circuit board 3 02' the wafer receiving space 3 0 2 a is, for example, It is a concave cup type, which is suitable for arranging a light emitting diode wafer 306. In addition, based on the consideration of the light-concentrating effect, some reflective film layers can be selectively clocked on the side wall of the wafer receiving space 3202a. The third implementation, and FIG. 5 and FIG. 6 are schematic diagrams illustrating a package structure of a white light emitting diode according to a third embodiment of the present invention. Please refer to FIG. 5, which is adopted in this embodiment.

9629twf.ptd 第12頁 2004080799629twf.ptd Page 12 200408079

=承載器400例如係一具有接腳4〇4之印刷電路板4〇2， 本貫細例之白光發光二極體之封裝即架構於此且 404之印刷電路板402上。 、 腳 本實施例白光發光二極體之封裝主要係由承 40 0、發光二極體晶片408、黏著層412、焊線416、 418以及封裝膠體422所構成。其中，承載器4〇〇例如係由曰 一印刷電路板402以及多個接腳404所構成，在印 402上具有多個接點40 6，而接腳4〇4則由印刷電路板4〇2 底部伸出。發光二極體晶片4〇8具有電極41〇，通常為阶 極、陽極兩電極。發光二極體晶片4〇8係藉由摻雜有~ = 體414之黏著層412貼附於印刷電路板4〇2上，且發光二極 體晶片408上之電極410例如分別藉由焊線416與刷^路 板4 0 2上的接點4 0 6電性連接。 本實施例中，黏著層412的材質例如為環氧樹脂等邦 著特性良好的材質，而螢光體41 4例如為YAG等黃色螢光"物 質。 、 螢光層418配置於印刷電路板4 〇2上，以覆蓋住發光二 極體晶片4 0 8、黏著層41 2以及部份的焊線41 6。榮光層4 j 8 中具有螢光體4 2 0 ’螢光層4 1 8例如為環氧樹脂等材質， 螢光體420例如為YAG等黃色螢光物質。此外，封裝膠體 4 2 2係用以將部份的印刷電路板4 〇 2、發光二極體晶片一 408、黏著層412、焊線416以及螢光層418包覆於内。 接著請參照第6圖，本圖中為提昇白光發光二極體的 聚光效果，故於印刷電路板402中設置一晶片容納空間= The carrier 400 is, for example, a printed circuit board 402 with a pin 404. The package of the white light emitting diode in this detailed example is structured on the printed circuit board 402 here and 404. The package of the white light-emitting diode of this embodiment is mainly composed of a socket 400, a light-emitting diode wafer 408, an adhesive layer 412, bonding wires 416, 418, and a packaging gel 422. Among them, the carrier 400 is composed of a printed circuit board 402 and a plurality of pins 404, for example, and has a plurality of contacts 406 on the printed board 402, and the pin 400 is formed of the printed circuit board 4o. 2 The bottom protrudes. The light-emitting diode wafer 408 has an electrode 410, which is usually a step electrode and an anode electrode. The light-emitting diode wafer 408 is attached to the printed circuit board 402 through an adhesive layer 412 doped with ~ = body 414, and the electrodes 410 on the light-emitting diode wafer 408 are, for example, respectively bonded by wires. 416 is electrically connected to the contact 4 0 6 on the circuit board 4 2. In this embodiment, the material of the adhesive layer 412 is, for example, a material with good bonding characteristics such as epoxy resin, and the phosphor 414 is, for example, a yellow fluorescent material such as YAG. The fluorescent layer 418 is disposed on the printed circuit board 402 to cover the light-emitting diode wafer 408, the adhesive layer 412, and a part of the bonding wires 416. The glory layer 4 j 8 includes a phosphor 4 2 0 ′. The phosphor layer 4 1 8 is made of, for example, an epoxy resin, and the phosphor 420 is made of a yellow fluorescent substance, such as YAG. In addition, the encapsulant 4 2 2 is used to cover a part of the printed circuit board 4 2, the light-emitting diode wafer 1 408, the adhesive layer 412, the bonding wire 416, and the fluorescent layer 418. Please refer to FIG. 6. In this figure, in order to improve the light-concentrating effect of the white light-emitting diode, a wafer receiving space is provided in the printed circuit board 402.

200408079200408079

片容納 極體晶 間 402a 空間402a例如係為一凹杯型態，其適 片408。此外，基於聚光效果的考量、 的側壁上可選擇性的鍍製一些反射獏 五、發明說明（10) 402a ，此晶 配置發光二 晶片容納空 層。 綜上所 有下列優點 I本發 『螢光體激 2.本發 種不同架構 3·本發 有製程相容 成本上的負 雖然本 以限定本發 神和範圍内 1蔓範圍當視 述，本發明白 光二極體之封裝結構至少 具 明白光 發』產 明中， 的發光 明白光 ，且於 擔。 發明已 明，任 ，當可 後附之 發光二極體之封裝結構可進一步地提昇 生白光的效率。 払雜有螢光體的黏著層可應用於任何各 一極體封裝。 發光二極體之封裝結構，在製作上與現 黏著層中摻雜螢光體的動作並不會造成 以^較佳貫施例揭露如上，然其並非用 何热習此技藝者，在不脫離本發明之精 作各種之更動與潤飾，因此本發明之保 申請專利範圍所界定者為準。The wafer-receiving polar body inter-crystal 402a space 402a is, for example, a concave cup type, which is suitable for the wafer 408. In addition, based on the consideration of the light-concentrating effect, some reflections can be selectively plated on the side walls. 5. Description of the Invention (10) 402a, this crystal is configured with a light-emitting two wafer to accommodate the empty layer. To sum up all of the following advantages I this hair "phosphor excitation 2. This hair has a different architecture 3. This hair has a negative process compatibility cost Although this book is limited to the scope of this hair and the scope of the scope, as the description, The packaging structure of the white light-emitting diode of the invention has at least clear light emission. The invention has shown that the encapsulation structure of the light emitting diode, which can be attached later, can further improve the efficiency of generating white light. Adhesive layers doped with phosphors can be applied to any individual polar package. The packaging structure of the light-emitting diode, the action of doping the phosphor in the production and the current adhesive layer will not cause the above to be disclosed in the preferred embodiment. However, it is not for anyone who is eager to learn this skill. Various changes and retouches that deviate from the essence of the present invention, so the ones defined by the scope of patent application for this invention shall prevail.

200408079 圖式簡單說明 第1圖繪示為習知白光發光二極體之封裝結構示意 圖； 第2圖繪示為依照本發明第一實施例白光發光二極體 之封裝結構不意圖， 第3圖與第4圖繪示為依照本發明第二實施例白光發光 二極體之封裝結構示意圖；以及 第5圖與第6圖繪示為依照本發明第三實施例白光發光 二極體之封裝結構示意圖。200408079 Brief Description of Drawings Figure 1 shows a schematic diagram of a packaging structure of a conventional white light emitting diode; Figure 2 shows a packaging structure of a white light emitting diode according to the first embodiment of the present invention, which is not intended, Figure 3 And FIG. 4 are schematic diagrams showing a packaging structure of a white light emitting diode according to a second embodiment of the present invention; and FIG. 5 and FIG. 6 are diagrams showing a packaging structure of a white light emitting diode according to a third embodiment of the present invention schematic diagram.

9629twf.ptd 第15頁9629twf.ptd Page 15

Claims (1)

200408079 六、申請專利範圍 1. 一種白光發光二極體之封裝結構，包括： 一承載器； 一黏著層，配置於該承載器上，其中該黏著層中摻雜 有一第一螢光體； 一發光二極體晶片，藉由該黏著層配置於該承载器 上，其中該發光二極體晶片具有二電極，且該些電極係與 該承载器電性連接； 一螢光層，覆蓋住該發光二極體晶片與該黏著層，其 中該螢光體層中具有一第二螢光體；以及 一封裝膠體，該封裝膠體係將部份該承載器、該螢光 層以及該發光二極體晶片包覆。 2 ·如申請專利範圍第1項所述之白光發光二極體之封 裝結構，更包括二焊線，該些焊線係電性連接於該些電極 與該承載器之間。 3 ·如申請專利範圍第2項所述之白光發光二極體之封 裝結構，其中該承載器係為一封裝腳架。 4 ·如申請專利範圍第3項所述之白光發光二極體之封 裝結構，其中該封裝腳架包括： 一第一接腳’該第_接腳頂端具有一承載座，且該承 載座中具有一晶片容納空間，其中該晶片容納空間適於配 置該發光二極體晶片； 第一接腳’該第二接腳位於該第一接腳旁；以及 其中’該些電極係藉由該些焊線與該第一接腳、該第 二接腳電性連接。200408079 6. Scope of patent application 1. A package structure of a white light emitting diode, comprising: a carrier; an adhesive layer disposed on the carrier, wherein the adhesive layer is doped with a first phosphor; The light-emitting diode chip is arranged on the carrier by the adhesive layer, wherein the light-emitting diode wafer has two electrodes, and the electrodes are electrically connected to the carrier; a fluorescent layer covers the A light-emitting diode chip and the adhesive layer, wherein the phosphor layer has a second phosphor; and an encapsulating gel, the encapsulating system comprises a part of the carrier, the fluorescent layer and the light-emitting diode Wafer coating. 2. The packaging structure of the white light emitting diode according to item 1 of the scope of the patent application, further including two bonding wires, the bonding wires are electrically connected between the electrodes and the carrier. 3. The packaging structure of the white light-emitting diode according to item 2 of the scope of the patent application, wherein the carrier is a packaging foot. 4 · The package structure of the white light emitting diode according to item 3 of the scope of the patent application, wherein the package leg includes: a first pin 'the top pin has a bearing base, and the bearing base There is a wafer accommodating space, wherein the wafer accommodating space is suitable for arranging the light-emitting diode wafer; the first pin 'the second pin is located beside the first pin; and wherein' the electrodes are formed by the electrodes The bonding wire is electrically connected to the first pin and the second pin. 9629twf.ptd -------- 第16頁 200408079 六、申請專利範圍 5 ·如申請專利範圍第4項所述之白光發光二極體之封 裝結構，其中該晶片容納空間係為一凹杯型態。 6·如申請專利範圍第2項所述之白光發光二極體之封 I結構，其中該承載器係為〆印刷電路板，且該印刷電路 板上具有二接點，且該些電極藉由該些焊線與該些接點電 性連接。 — 7 ·如申請專利範圍第2項所述之白光發光二極體之封 裝結構，其中該承載器係為一印刷電路板，且該印刷電路 板上具有一晶片容納空間以及二接點，該晶片容納空間適 於配置該發光二極體晶片，且該些電極藉由該些焊線與該 些接點電性連接。 8 ·如申請專利範圍第7項所述之白光發光二極體之封 装結構，其中該晶片容納空間係為一凹杯型態。 9 ·如申請專利範圍第2項所述之白光發光二極體之封 裝結構，其中該承載器包括： 一印刷電路板，該印刷電路板上具有二接點，且該些 電極藉由該些焊線與該些接點電性連接；以及 複數個接腳，該些接腳係由該印刷電路板底部伸出， 且與該些接點電性連接。 1 0 ·如申請專利範圍第2項所述之白光發光二極體之封 裝結構，其中該承載器包括：9629twf.ptd -------- Page 16 200408079 6. Scope of patent application 5 · The white light emitting diode package structure described in item 4 of the scope of patent application, wherein the chip accommodation space is a concave Cup shape. 6. The white light-emitting diode sealing structure as described in item 2 of the scope of the patent application, wherein the carrier is a tritium printed circuit board, and the printed circuit board has two contacts, and the electrodes are connected by The bonding wires are electrically connected to the contacts. — 7 · The packaging structure of the white light emitting diode according to item 2 of the scope of the patent application, wherein the carrier is a printed circuit board, and the printed circuit board has a wafer receiving space and two contacts. The chip receiving space is suitable for disposing the light emitting diode chip, and the electrodes are electrically connected to the contacts through the bonding wires. 8. The packaging structure of the white light emitting diode according to item 7 in the scope of the patent application, wherein the wafer receiving space is a concave cup type. 9 · The packaging structure of the white light emitting diode according to item 2 of the scope of the patent application, wherein the carrier comprises: a printed circuit board having two contacts, and the electrodes are connected by the electrodes. The bonding wires are electrically connected to the contacts; and a plurality of pins, the pins are protruded from the bottom of the printed circuit board and are electrically connected to the contacts. 1 0 · The packaging structure of the white light emitting diode as described in item 2 of the patent application scope, wherein the carrier includes: 一印刷電路板，該印刷電路板上具有一晶片容納空間 以及二接點，該晶片容納空間適於配置該發光二極體，且 該些電極藉由該些焊線與該些接點電性連接；以及 200408079A printed circuit board having a wafer receiving space and two contacts, the wafer receiving space is suitable for disposing the light emitting diode, and the electrodes are electrically connected to the contacts through the bonding wires. Connection; and 200408079 六、申請專利範圍 複數個接腳，該些接腳係由該印刷電路板底部伸出， 且與該些接點電性連接。 1 1 ·如申請專利範圍第1 0項所述之白光發光二極體之 封裝結構，其中該晶片容納空間係為一凹杯型態。 1 2 ·如申請專利範圍第1項所述之白光發光二極體之封 裝結構，其中該黏著層之材質包括環氧樹脂。 1 3 ·如申請專利範圍第1項所述之白光發光二極體之封 裝結構，其中該第一螢光體係為一黃色螢光物質。 1 4 ·如申請專利範圍第1 3項所述之白光發光二極體之 封裝結構，其中該第一螢光體之材質包括YAG。 1 5 ·如申請專利範圍第1項所述之白光發光二極體之封 裝結構，其中該螢光層之材質包括環氧樹脂。 1 6 ·如申請專利範圍第1項所述之白光發光二極體之封 裝結構，其中該第二螢光體係為一黃色螢光物質。 1 7.如申請專利範圍第1 6項所述之白光發光二極體之 封裝結構，其中該第二螢光體之材質包括YAG。 1 8 ·如申請專利範圍第1項所述之白光發光二極體之封 裝結構，其中該發光二極體晶片係為一藍光發光二極體晶 片。 1 9 ·如申請專利範圍第1 8項所述之白光發光二極體之 封裝結構，其中該藍光發光二極體晶片具有一藍寶石基 底06. Scope of Patent Application A plurality of pins are protruded from the bottom of the printed circuit board and are electrically connected to the contacts. 1 1 · The packaging structure of the white light emitting diode as described in item 10 of the scope of the patent application, wherein the chip receiving space is a concave cup type. 1 2 · The packaging structure of the white light emitting diode according to item 1 of the scope of the patent application, wherein the material of the adhesive layer includes epoxy resin. 1 3 · The packaging structure of the white light emitting diode according to item 1 of the scope of patent application, wherein the first fluorescent system is a yellow fluorescent substance. 1 4 · The packaging structure of the white light emitting diode according to item 13 of the scope of the patent application, wherein the material of the first phosphor includes YAG. 15 · The packaging structure of the white light emitting diode as described in item 1 of the scope of patent application, wherein the material of the fluorescent layer includes epoxy resin. 16 · The packaging structure of the white light emitting diode according to item 1 of the scope of the patent application, wherein the second fluorescent system is a yellow fluorescent substance. 1 7. The packaging structure of the white light emitting diode according to item 16 of the scope of patent application, wherein the material of the second phosphor includes YAG. 18 · The packaging structure of the white light emitting diode according to item 1 of the scope of the patent application, wherein the light emitting diode wafer is a blue light emitting diode wafer. 19 · The packaging structure of the white light emitting diode as described in item 18 of the scope of patent application, wherein the blue light emitting diode chip has a sapphire substrate. 9629twf.ptd 第18頁9629twf.ptd Page 18
TW091132652A 2002-11-06 2002-11-06 White LED package TW564535B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW091132652A TW564535B (en) 2002-11-06 2002-11-06 White LED package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091132652A TW564535B (en) 2002-11-06 2002-11-06 White LED package

Publications (2)

Publication Number Publication Date
TW564535B TW564535B (en) 2003-12-01
TW200408079A true TW200408079A (en) 2004-05-16

Family

ID=34617964

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091132652A TW564535B (en) 2002-11-06 2002-11-06 White LED package

Country Status (1)

Country Link
TW (1) TW564535B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110350064A (en) * 2013-07-01 2019-10-18 晶元光电股份有限公司 Light-emitting diode component and production method

Also Published As

Publication number Publication date
TW564535B (en) 2003-12-01

Similar Documents

Publication Publication Date Title
KR102287651B1 (en) Illumination device
US7156538B2 (en) LED package for backlight unit
JP5437177B2 (en) Light emitting device
US7777237B2 (en) Semiconductor light-emitting device and method of fabricating the same
JP5089212B2 (en) LIGHT EMITTING DEVICE, LED LAMP USING THE SAME, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
US20110089815A1 (en) Light-emitting device
JP2008235824A5 (en)
JP2010251775A (en) Light emitting device
JP6107067B2 (en) Light emitting device
TW200939450A (en) LED chip package structure manufacturing method for preventing light-emitting efficiency of fluorescent powder from being decreased due to high temperature
JP2012134295A (en) Semiconductor light-emitting device and method of manufacturing the same
JP2000349345A (en) Semiconductor light emitting device
JP2007243056A (en) Light emitting device
KR20090034412A (en) Light generating chip and method of manufacturing the same
EP2720266A2 (en) Luminescence device
TWM454630U (en) Mixed-light LED structure
JP2007042686A (en) Light emitting diode device
EP2713411B1 (en) Luminescence device
JP3941826B2 (en) LED luminaire manufacturing method
TW200408079A (en) White led package
KR100954858B1 (en) A high-luminance led package and method for manufacturing thereof
JP2013012789A (en) Light-emitting device
TW201607015A (en) An illumination device
TW201244056A (en) Light emitting diode module package structure
JP2009076803A (en) Light emitting module and light emitting device

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees