200402786 玖、發明說明： 【發明所屬之技術領域】 本發明係適用於1C卡或智慧卡（smart card)等之卡片 的薄膜化研磨加工，尤及是涉及晶圓之薄膜化研磨 (grinding)及薄膜化後之晶圓的移送等晶圓製造方法以及 該方法所用之粘膠帶。 【先前技術】 半導體晶圓中廣被人所知者為石夕及嫁—石申等化合物半 導體，其中矽最為常用。此矽晶圓係將由單晶拉晶法製得 之高純度矽錠（silicon ingot)切割成厚度約500〜1000 # m 之薄片而製取。將如此製取之矽晶圓，依各種方法加工就 可將多種之積體電路圖案形成於晶圓上。然後，將此形成 有電路圖案之晶圓包封成為各種元件或裝置（dev ice)之封 裝體（package)前，需先藉由研磨加工在該晶圓的背面實施 研磨使其薄化至規定的厚度。進而因應需要為消除研磨加 工時產生之碎層等研磨應變（strain)目的，有時要實行由 化學蚀劇及CMP(化學機械磨光）等代表之應力消除（stress relief)處理。 此時’為防止研磨加工及應力消除處理引轉之碎屑或 化學品等之污染及防止研磨加工時之衝擊引起之:晶圓本身 之破損目的’需於電路圖案的表面貼合保護用·之點膠帶。 待晶圓背面之研磨加工完了後，若是紫外線硬化型粘膠帶 時’對其實施紫外線照射後，而其他種保護用粘膠帶時則 無需實行特別之後處理，將貼於該晶圓表面之保護用粘膠 Λ ,Γ· Λ 』 200402786 帶剝除’然後存放於晶圓盒（wafer cassette)中並輸送至 · 切割（dicing)部門。 然而，採用以往之晶圓背面研磨加工方式時，若是背 面研磨後之晶圓厚度在300//p以上之較厚場合，很難因研 磨加工發生晶圓本身之彎蹺或撓曲等變形，因此研磨後之 晶圓與不施加研磨加工之晶圓同樣呈平坦狀，故能於研磨 加工後之原狀輸送至下一製程，同時也能直接存放於晶圓 盒内。 但近年來由於對行動機器之封裝用途的急遽增大，由 stack型CSP(Chip · Size · Package)所代表之三維高密度包 封型封裝體之需求量大增。為配合晶片（chip)面積與封裝 體（package)投影面積之同一化以及封裝體厚度的薄膜 化’必須使組裝之晶片本身薄膜化，亦即須使半導體晶圓 本身之厚度作成25〜100# m之極薄狀。但，如此薄膜化之晶 圓在研磨加工後極難保持加工前之平坦狀，亦即研磨加工 後會發生顯者之彎蹺及撓曲等變形，尤其易在晶圓之端部^ 發生所謂之薯條狀的彎蹺變形。因此，用背側研磨機 ^ (backside grinder)對晶圓之背面進行研磨加工後，從吸镰 附固定晶圓之台面（stage)放離晶圓時，晶圓即會發生如薯 條狀的變形。由於此種變形將該晶圓藉由吸附臂輸送至下 一製程時易發生真空吸附之失誤。另外將其存放於晶圓盒· 内時’由於晶圓呈彎蹺狀而又有無法存放等問題。 為了解決上述問題，在日本特開平6—3〇2569號公報中 有倡議，例如於切割製程中使用一種直徑較晶圓直徑為大 6 200402786 ^環形框（ring frame)，在其表面之全面貼 腺 片而在該膠片的中央部貼合固定晶圓之方法膠 之晶圓平坦狀的保持於^ 且」肘忑日日囡隨同J辰形框一起輸送。 等，將另日外^還有例如揭示於日本特開_~9㈣號公報 ^r:r於，等吸==:= 土孤，而在該狀恶連基盤—起實行晶圓之背面研磨加 化之Γ平坦狀的保持，並於貼合於基盤上之 狀L輸运至下一製程或存放於晶圓盒中之方法等。 然而，此種薄膜化之晶圓形狀之保持、輸送方法，在 使用環=框時’隨著晶圓直徑之增大有必要配合適合晶圓 直徑之環形框的大小加大背侧研磨機本身之吸咐固定台面 (stage)。於疋，除需要研發與通用裝置全然不同之特別嗖 :又需要可賴環形框-起存放之特製晶圓盒及存 又，依上述之贴合於基盤上之晶圓形狀的保持、輸送 方法時’曰曰曰圓與硬質基盤的貼合界面極難作爿無氣泡等捲 入。利用現有裝置{existing facilities}時，赛晶圓之薄 膜化研磨加工後極難使晶圓自基盤剝離，且剝離時有易引 起晶圓破損之問題。 【發明内容】 本發明為解決上述之問題，提供一種晶圓薄膜化研磨 7 200402786 及薄膜化晶圓之輪误古、土 維持輸送時之性能：同時確=持薄膜化的晶圓形狀及 之與現有裝置之適合性為夺2:曰合及自晶圓剝離等 化研目的為提供—種適合上述方法中，薄膜 化研磨加工時使用之晶圓粘膠帶。 及配述及其他目的、_及獅，將由實施例 及配合附圖所作之說明趨為更明晰。 化研解決上述先前技術之半導體晶圓的薄膜 =研磨及薄媒化晶圓的輸送方法之問題，經多方研究结果 ==圓之研磨前，預先於其設有電路圖案之表面貼 口具有曰曰圓形狀保持層之枯膠帶，於該晶圓的背面實行背 面研磨加工後，從該研磨裝置之吸附固定晶片之夾盤 (cH ta_取下晶圓前，使該枯膠帶之晶圓形狀保持層 由柔軟之狀態硬化至能保持薄膜化之晶圓之形狀之硬度 後’將該晶圓及該轉帶—起從該夾盤剝離而輸送至下一 製程’如此可將晶圓保持平坦狀態，防止在輪送時受到破 損’、同時又能存放於既有之晶圓盒中，從而根據此發現， 完成本發明。 即，本發明提供一種含有·· (1) (a)於晶圓之研磨前，預先將粘膠帶貼合於曰圓表 面之步驟，及（b)於晶圓的研磨加工完了後，使該粘ς帶之 晶圓形狀保持層硬化至可將晶圓之形狀保持原來之平坦狀 之硬度之步驟為特徵之晶圓製造方法。 一 (2) 上述之粘膠帶具有至少一層晶圓形狀保持層構成 200402786 其薄膜狀支持體，或於薄膜狀支持體與塗佈於該薄膜狀支 持體之粘膠劑，層之間設置晶圓形狀保持層，其^該晶圓形 狀保持層可將薄膜化之晶圓的形狀保持平坦狀。^ (3) 上述之晶圓形狀保持層具有依周遭溫度作可逆的 軟化-硬化變化的特性。 (4) 使上述晶圓形狀保持層硬化之步驟包括：於曰圓 研磨完了後’從因研磨時發熱之加熱狀態，將該粘膠帶冷 卻至晶圓形狀保持層可將晶圓之形狀保持平坦狀的溫度。 (5) 構成上述之钻膠帶之晶圓形狀保持層係由至少一 層以上之樹脂層構成，且該樹脂層含有可在熔融開始溫度 Ti軟化-硬化變化之侧鏈結晶性聚合物。 (6) 上述晶圓製造方法尚包含可將晶圓貼合於粘膠帶 之狀態輸送之一步驟。 y α)—種含有： (a) 於晶圓之研磨前、預先於該晶圓表面貼合備有晶 圓形狀保持層之粘膠帶時，於構成該保持層之樹脂之玻璃 化轉變點（glass transition point)以上之溫度下一邊加 熱一邊使該保持層軟化進行貼合之步驟； (b) 於晶圓的研磨加工完了後，從因研磨時發熱之加 熱狀態，將該枯膠帶冷卻至構成該保持層之樹脂之玻璃化 轉變點以下之溫度，使其硬化之步驟。 (8)上述之晶圓形狀保持層係構成粘膠帶之薄膜狀支 持體之至少一層’或由配置於薄膜狀支持體與塗佈於該薄 膜狀支持體之枯膠劑層之間之至少一層以上之樹脂層構成 200402786 ，該樹脂具有構成點膠帶之薄膜狀支持體之玻璃化轉變點 以下之玻璃化#變點，將該粘膠帶冷卻至該樹脂之玻璃化 轉變點以下之溫度時，該樹脂層即硬化而得以將薄膜化之 晶圓的形狀保持平坦狀。 (9) 一種晶圓薄膜化研磨加工用粘膠帶，係以··將晶 圓形狀保持層作為構成粘膠帶之薄膜狀支持體之至少一 ，層，或於薄膜狀支持體與塗佈於該薄膜狀支持體之粘膠劑 層之間配置晶圓形狀保持層，藉該晶圓形狀保持層將晶圓 的形狀保持平坦狀為其特徵者。 (10) 上述之晶圓形狀保持層具有依周遭溫度作軟化 及硬化之可逆變化的特性。 (11) 上述之晶圓形狀保持層具有受冷卻時會硬化之 特性。 (12) 上述之晶圓形狀保持層係由至少一層以上之樹 脂層構成，而該樹脂層含有侧鏈結晶性聚合物，將該聚合 物冷卻至一次熔融轉變溫度Tm以下時會硬化的特徵。 (13) 上述之晶圓形狀保持層係由至少一層以上之樹 月曰層構成’而該树Ba層含有具有構成枯膠帶之薄膜狀支持 體之玻璃化轉變點以下之破璃化轉變點之樹脂，將該枯膠 帶冷卻至該樹脂之玻璃化轉變點以下之溫度時，該樹脂層 即硬化而得以將薄膜化之晶圓的形狀保持平坦狀。 本說明書中所S之「侧鍵結晶性聚合物」其熔融開始 溫度Ti係指樹脂從軟化狀態實質的轉變完成為硬化狀態之 溫度’換言之’加熱則有秩序排列整合之樹脂的特定部分 10 Λ Λ r- 200402786 因受加熱開始變成無秩序狀態之溫度。爰參照第1圖說明 之0200402786 发明, Description of the invention: [Technical field to which the invention belongs] The present invention is applicable to thin film polishing processing of 1C cards or smart cards, especially to thin film polishing of wafers and Wafer manufacturing method such as wafer transfer after thinning, and adhesive tape used in the method. [Previous Technology] Semiconductor wafers are widely known as semiconductor compounds such as Shi Xi and Jia Shi-Shen, among which silicon is most commonly used. This silicon wafer is obtained by cutting a high-purity silicon ingot (silicon ingot) prepared by a single crystal pulling method into a thickness of about 500 to 1000 # m. By processing the silicon wafer thus prepared, various integrated circuit patterns can be formed on the wafer by various methods. Then, before packaging the wafer with the circuit pattern into packages of various components or devices (dev ice), it is necessary to first grind the wafer to a predetermined thickness by grinding on the back surface of the wafer. thickness of. In order to eliminate the need for grinding strain such as chipping during grinding, stress relief treatments such as chemical etching and CMP (Chemical Mechanical Polishing) are sometimes required. At this time, 'in order to prevent contamination of debris or chemicals induced by the grinding process and the stress relief process, and to prevent the impact caused by the grinding process: the purpose of damage to the wafer itself', it is necessary to protect the surface of the circuit pattern. Dot tape. After the polishing process on the back of the wafer is completed, if it is a UV-curable adhesive tape, it will be irradiated with ultraviolet rays, while other types of protective adhesive tapes do not need special post-treatment, and will be attached to the surface of the wafer for protection. Viscose Λ, Γ · Λ 200402786 The tape is stripped and then stored in a wafer cassette and transported to the dicing department. However, when the conventional wafer back-grinding method is used, if the thickness of the wafer after back-grinding is 300 // p or more, it is difficult for the wafer itself to deform or deform due to the grinding process. Therefore, the polished wafer is flat like the wafer without the grinding process, so it can be transported to the next process after the grinding process, and it can also be stored directly in the wafer box. However, in recent years, due to the rapid increase in the use of packaging for mobile devices, the demand for three-dimensional high-density packaging packages represented by stack-type CSP (Chip · Size · Package) has increased greatly. In order to match the uniformity of the chip area with the projected area of the package and the thinning of the package thickness, the assembled wafer itself must be thinned, that is, the thickness of the semiconductor wafer itself must be made 25 ~ 100 # m is extremely thin. However, it is extremely difficult for such a thin-filmed wafer to remain flat before processing after grinding, that is, obvious distortions such as deflection and deflection will occur after grinding, and it is particularly prone to the so-called ^ at the end of the wafer. The french fries are deformed. Therefore, after grinding the back surface of the wafer with a backside grinder ^, when the wafer is released from the stage where the wafer is attached to the fixed wafer, the wafer will appear like a fries. Deformation. Due to this deformation, the wafer is easily transferred to the next process by the suction arm, and the vacuum suction error is liable to occur. In addition, when it is stored in a wafer cassette ·, the wafer cannot be stored because it is jagged. In order to solve the above problems, there is an proposal in Japanese Patent Application Laid-Open No. 6-30002, for example, in the dicing process, a diameter larger than that of the wafer is used. 6 200402786 ^ Ring frame, which is affixed on its surface. The method of attaching a wafer to a central part of the film and fixing the wafer to the wafer is to keep the wafer in a flat shape at ^, and the elbow is transported along with the J-shaped frame. Etc. will be disclosed in Japanese Unexamined Patent Publication No. _ ~ 9㈣ ^ r: r Yu, etc. ==: = Tu Gu, and the backside polishing of the wafer will be carried out on this substrate. The method of maintaining the flattened Γ in a flat state and transporting the L in a state adhered to the substrate to the next process or storing in a wafer box. However, in the method of maintaining and conveying the thin wafer shape, when using the ring = frame, as the wafer diameter increases, it is necessary to increase the size of the ring frame suitable for the wafer diameter to increase the size of the backside grinder itself. The suction command fixed stage. Yu Yu, in addition to the need to develop a special and completely different from the general device: You also need to rely on the ring frame-a special wafer box for storage and storage, according to the above-mentioned method of wafer shape retention and transportation on the substrate Shi 'said that the bonding interface between the circle and the hard substrate is extremely difficult to get involved without bubbles. When the existing equipment {existing facilities} is used, it is extremely difficult to peel off the wafer from the substrate after the thin film polishing process of the wafer, and the problem of wafer breakage is likely to occur during the peeling. [Summary of the Invention] In order to solve the above-mentioned problems, the present invention provides a wafer thin film polishing 7 200402786 and the performance of the thin film wafer wheel when the soil is maintained and transported: at the same time, it is indeed equal to the shape of the thin film wafer. The suitability with the existing device is to obtain 2: a combination and peeling from wafers, etc. The purpose of chemical research is to provide a kind of wafer adhesive tape suitable for thin film polishing in the above method. And descriptions and other purposes, and lions, will be made clearer from the examples and the description made with the accompanying drawings. Chemical research solves the problems of the thin film of the prior art semiconductor wafer = the method of polishing and the transport of thin dielectric wafers. The results of various researches = = before the grinding of the circle, the surface stickers with circuit patterns in advance have The dry tape of the circular shape retaining layer is subjected to back grinding processing on the back of the wafer, and then the wafer of the grinding device is used to fix and fix the wafer chuck (cH ta_ before removing the wafer to make the wafer shape of the dry tape). After the holding layer is hardened from a soft state to a hardness capable of maintaining the shape of the thin film wafer, the wafer and the transfer tape are peeled off from the chuck and transported to the next process, so that the wafer can be kept flat. State to prevent damage during rotation ', and at the same time, it can be stored in an existing wafer cassette, so that the present invention is completed based on this finding. That is, the present invention provides a method containing ... (1) (a) 于 晶The steps of laminating the adhesive tape on the round surface before grinding the circle, and (b) after the wafer grinding process is completed, the wafer shape retaining layer of the adhesive tape is hardened to the shape of the wafer Keep the original flat hardness The steps are characterized by a method for manufacturing a wafer. (1) The above adhesive tape has at least one wafer shape retaining layer structure 200402786, a film-shaped support thereof, or an adhesive applied between the film-shaped support and the film-shaped support. Adhesive, a wafer shape retaining layer is provided between the layers, and the wafer shape retaining layer can keep the shape of the thin-filmed wafer flat. ^ (3) The above wafer shape retaining layer has a function of ambient temperature. Reversible softening-hardening change characteristics. (4) The step of hardening the wafer shape retaining layer includes: after completion of the round grinding, the adhesive tape is cooled from the heating state due to the heat generated during grinding, and the wafer shape is maintained until the wafer shape is maintained. The temperature at which the wafer shape can be kept flat. (5) The wafer shape maintaining layer constituting the above-mentioned drill tape is composed of at least one resin layer, and the resin layer contains a softening at the melting start temperature Ti- Hardened side-chain crystalline polymer. (6) The above wafer manufacturing method further includes a step of conveying the wafer in a state where the wafer is attached to the adhesive tape. Y α)-A type containing: (a) Grind 7. When an adhesive tape provided with a wafer-shaped retaining layer is laminated on the wafer surface in advance, the retaining layer is softened while being heated at a temperature above the glass transition point of the resin constituting the retaining layer. The bonding step is performed; (b) After the wafer is polished, the dry tape is cooled to a temperature below the glass transition point of the resin constituting the holding layer from the heating state due to heat generated during polishing, so that the Steps of hardening. (8) The above-mentioned wafer shape maintaining layer is at least one layer of a film-shaped support constituting an adhesive tape 'or at least one layer disposed between the film-shaped support and a gumming agent layer coated on the film-shaped support. The above resin layer constitutes 200402786, the resin has a glass transition #change point below the glass transition point of the film-like support constituting the dot tape, and when the adhesive tape is cooled to a temperature below the glass transition point of the resin, the The resin layer is hardened to keep the shape of the thin film wafer flat. (9) An adhesive tape for wafer thin film polishing processing, which uses a wafer shape retaining layer as at least one or a layer of a film-like support constituting the adhesive tape, or is coated on the film-like support and A wafer shape retaining layer is disposed between the adhesive layers of the film-shaped support, and the wafer shape retaining layer is used to keep the shape of the wafer flat as its characteristic. (10) The above-mentioned wafer shape retaining layer has a characteristic of reversible change of softening and hardening according to the surrounding temperature. (11) The wafer shape retaining layer described above has a characteristic that it hardens when cooled. (12) The above-mentioned wafer shape maintaining layer is composed of at least one resin layer, and the resin layer contains a side chain crystalline polymer, and the polymer is hardened when it is cooled to a temperature below the primary melting transition temperature Tm. (13) The above-mentioned wafer shape maintaining layer is composed of at least one layer of the tree moon layer, and the tree Ba layer contains a glass transition point below the glass transition point of the film-shaped support constituting the dry tape. For the resin, when the dry tape is cooled to a temperature below the glass transition point of the resin, the resin layer is hardened to keep the shape of the thin-filmed wafer flat. The "side-bond crystalline polymer" referred to in this specification has a melting start temperature Ti which refers to the temperature at which the resin is substantially transformed from a softened state to a hardened state. In other words, a specific part of the resin is arranged and integrated in an orderly manner when heated 10 Λ Λ r- 200402786 The temperature at which it becomes disordered due to heating.爰 Refer to Figure 1
對本發明之粘膠帶之晶圓形狀保持層，依通常之條件 於空氣圍氛下，以昇溫速度10°c/分進行差示掃描量熱法 (DSC)測定時，獲得如第1圖所示之熱量—溫度曲線。由圖可 知，本發明之粘膠帶之晶圓形狀保持層隨著溫度之上昇顯 示很大之吸熱高峰。吸熱高峰出現之前後，熱量_溫度曲線When the wafer shape retaining layer of the adhesive tape of the present invention was subjected to a differential scanning calorimetry (DSC) measurement at a temperature increase rate of 10 ° c / min under an ordinary atmosphere under an air atmosphere, as shown in FIG. 1 Heat-temperature curve. As can be seen from the figure, the wafer shape maintaining layer of the adhesive tape of the present invention shows a large heat absorption peak with the increase in temperature. Heat_temperature curve before and after the endothermic peak
殆呈平坦狀。以直線連結吸熱前之熱量—溫度曲線之平垣部 分之點A及吸熱後之熱量-溫度曲線之平坦部分之點b而以 此直線作為基準線。從點人進一步提升溫度，熱量—溫度曲 線之傾度即變為最大。在此點(：所引之切線（tangent Hne) 與上述基準線之交點為溶融開始溫度以，超過點c進一步提 升度，吸熱曲線即達高峰，此點即為一次熔融轉變溫度The salamander is flat. A straight line is used to connect point A of the flat portion of the heat-temperature curve before the endotherm and point b of the flat portion of the heat-temperature curve after the endotherm, and this straight line is used as the reference line. From the point of further raising the temperature, the inclination of the heat-temperature curve becomes maximum. At this point (: the intersection of the tangent Hne and the above reference line is the melting start temperature, and if the point c is further increased, the endothermic curve will reach a peak, and this point will be the melting transition temperature.
TlD。本發韻謂—切轉變溫度Tm係指加減有秩序排 ，整合之樹脂（聚合物）的特定部分因受加制始變成無秩TlD. This rhyme means that the cut transition temperature Tm refers to the orderly addition and subtraction, and the specific part of the integrated resin (polymer) becomes rankless due to addition.
t態之溫度。從此點進—步提升溫度即達融解完了點B。 此時之溫度為融解完了溫度Te。 本㈣書中所言之「將薄膜化之晶_形狀保持平; :二係指藉由钻膠帶，將研磨加工後之晶圓以實質上不赛 或撓曲等變形下保持，使能用吸附f (sucti〇narii 輸送存放於晶圓盒内之意。 有上Γ月曰書：所言之「軟化-硬化變化」係指使不具 ϊίϊϋ之=保持層轉變為能將晶®形狀保射 — 又’’、卩由具有可撓性狀態轉變為能平坦狀的裔 11 200402786 持晶圓形狀之硬度之意。 上述硬化及軟化係可逆的發生。本發明係將可硬化至 能將薄膜化的晶圓形狀保持平坦狀之具有晶圓形狀保持層 之粘膠帶，在實施研磨加工前，預先將晶圓形狀保持層仍 呈柔軟狀態時貼合於晶圓上，待薄膜化研磨加工完了後， 將晶圓平坦狀的固定保持於研磨機的晶圓吸附固定用台面 (stage)上之狀態，使粘膠帶之晶圓形狀保持層硬化，因而 可將晶圓及粘膠帶一起保持平坦狀態，供輸送及存放於晶 圓盒中。更有進者，由於本發明之粘膠帶之晶圓形狀保持 層之硬度可發生可逆的變化，故從薄膜化的晶圓剝離粘膠 帶時，可用習知之膠帶剝離裝置，於吸附晶圓之狀態將粘 膠帶向180度方向折曲即能剝離，故能輕易製得薄膜化的晶 圓。 可用於本發明之晶圓製造方法之粘膠帶為其構成薄 膜狀支持體之至少一層，或薄膜狀支持體與塗敷於該薄膜 狀支持體之粘膠劑層之中間具有因施予加熱或冷卻等溫度 差時可逆的改變硬度，即由柔軟狀態硬化成能將晶圓形狀 保持平坦狀之硬度之性質之晶圓形狀保持層。 本說明書中所謂「可將晶圓形狀保持平坦狀之溫度」 係指構成晶圓形狀保持層之樹脂由軟化狀態實質的完成硬 化之溫度。在此溫度以下時可維持硬化狀態。此溫度只要 疋構成日日0形狀保持層之樹脂的一次炼融轉變點或玻璃化 轉變點以下之溫度，即可任意的設定。「可將晶圓形狀保 持平坦狀之溫度」最好在1〇〜3〇°c範圍任意選擇，但配合實 12 200402786 行研磨加工之場所之室溫設定最為可取。 此粘膠帶如第2圖斷面圖所示，1為薄膜狀支持體，2 為晶圓形狀保持層，3為貼合晶圓之粘膠劑層。 本發明之粘膠帶之晶圓形狀保持層受到冷卻時具有 硬化成能將晶圓形狀保持平坦狀之硬度之性質。此晶圓形 狀保持層係由因周遭溫度發生軟化—硬化之可逆變化之材 料構成，軟化點雖依用途及使用方法等而有些許之不同， 可在30〜100°C範圍選擇，最好在4〇〜6(TC之範圍。但只要能 以所定溫度為界發生軟化—硬化，則亦可選擇上述溫度範圍 以外之溫度。 由於本發明之粘膠帶之晶圓形狀保持層具有可逆的 軟化-硬化變化的性質，故利用研磨機對晶圓的背面進行研 磨加工時，構成晶圓形狀保持層之樹脂本身會隨著工件溫 度之亡昇而被加熱軟化，顯現適當之緩衝性，發揮防止晶 圓破損之效果。研磨加工後從晶圓剝離粘膠帶時，使其柔 軟化，則_帶本身變為具有可撓性，於是適合使用習知 之勝帶卿裝置將膠帶折曲度實行·U法。 wt此帶之晶圓形狀保持層最好是含有在溶融開始 熱ΐ炼融硬化變化之侧鏈結晶性聚合物。此聚合物加 ΐ會硬化 度T1以上之溫度時會柔軟化，‘彻下溫 為主ΐί:::性丙烯酸醋、甲基丙物 直鏈燒基，二取為含碳原子10個以上之 一旯了取為含奴原子10〜24個以下之直鏈烷基，上 200402786 述之丙稀酸醋及曱基丙烯酸醋之 醋、（曱基)丙，烯酸曱醋、（曱=為(曱基)丙烯酸 酸正丁醋、（甲基）丙稀酸異丁; ^、（曱基）丙= 醋、(甲基)丙烯酸，基乙醋、(曱 基）烯^ 2絲丙醋、（甲基） 酸甘油酯、（甲基) ，、（曱基)丙烯 所舉示者。 虱乙δ曰及丙烯瞭等，但不限於 丹有 人时修咿之日日圓形狀保持 Β曰 可以玻璃化轉變點為界發 =疋取好使用-’ 。此樹脂威s ^ 硬化變化之熱塑性樹脂 卻至此溫度以下時备^變::士之溫度時會柔軟化’ ^ 丁二稀共聚合物。；硬:用性樹墙可舉苯乙稀-禪拣厗夕拍拖^仁使用於本發明之粘膠帶之晶圓形法 玻璃““樹脂之玻璃化轉變點須在薄膜狀支持體4 璃轉&點以下。此種熱塑性樹脂轉 口 ί，變成具有可將薄膜化之晶圓=口 —構成师帶之晶®雜絲層之樹脂（聚合物）不限 上面所舉示者’即只要會因周遭溫度，於所定之溫度為 I可逆的發生軟化-硬化變化之樹脂均能適用。 匕又，粘膠帶之晶圓形狀保持層亦可含有紫外線硬化型 樹脂等因化學反應而會硬質化之樹脂。在此場合，晶圓形 狀保持層則由至少二種樹脂構成，即由受放射線照射硬化 之放射線硬化型樹脂及具有冷卻至所定溫度會結晶化之性 質之側鍵結晶性聚合物及/或加熱至玻璃化轉變點以上溫 14 δδδ45 2UU4U2/80 度時會柔軟化之熱塑性 脂廣被用者、,> Τ θ所構成。此種放射線硬化型樹 具有至少2個W ^射^會三維（立體）網狀化之在分子内 而言，例如：三\:性碳一碳雙鍵之低分子量化合物。具體 丙稀酸醋、泰☆基丙烧二丙歸酸酯、四經曱基甲烧四 、二季戊 〗=二丙稀酸酯、季戊四醇四丙烯酸醋 、u 减五__旨、二季戊四醇六丙烯酸輯 二醇-丙一丙烯酸酯、r，6~己二醇二丙烯酸酯、聚乙 丙烯酸酯、或低酯丙烯酸酯等。 烯酸醋烯酸§旨系化合物之外，亦可使用尿燒丙 ===元醇化合物與多價異氰_旨化合物（例风 笨一 —異减g旨、2,6_甲次苯基二異氰酸醋、1,3- 甲二異，醋、“一苯二甲基二異氰酸醋、二苯基 人:異氰酸自旨等）反應所得之末端異級醋尿烧聚 :发再與具有經基之丙雜酯或甲基丙烯酸醋（例如2 — 二土丙烯酸酯、2一羥乙基甲基丙烯酸酯、2一羥丙基丙烯 一 ®曰2〜羥丙基曱基丙烯酸酯、聚乙二醇丙烯酸酯、聚乙 二醇甲基丙烯酸酯等）反應所得者。 么晶圓形狀保持層之厚度並無特別限制，硬举時只要具 有症保持晶圓形狀之厚度即愈薄愈好，較好為10〜20〇em 更好為3 0〜1 〇 〇 # m。 e 本發明粘膠帶之薄膜狀支持體通常用塑膠或橡膠。若 疋晶圓形狀保持體或粘膠劑使用放射線硬化型之樹脂或魅 谬劑，則該薄膜狀支持體需使用具有放射線透過性者，若 88SS8 15 200402786 是使用紫外線照射硬化時，則選用 者。此穆 薄膜狀支持體係由例如聚乙稀、聚丙烯、乙二一兩烯兵' 物、聚丁婦~[1]、聚+甲基戊婦[1]、乙婦酸匕婦炎聚 物、乙=-丙_共聚體、離聚物（離子交聯聚舍物）等^ #烯屬烴之单獨聚合物或共聚物，或彼等之潞舍物、条. 苯^曱酸乙i旨、聚碳酸酷、聚甲基丙烯酸曱酿等工释谬、 聚氨基甲酸乙醋、苯乙稀乂婦_丁稀 聚物等之 熱塑性彈性物等，依要求特性任意的選^糸 此等薄膜狀支持體可依習知之擠製法製造，芳是由黎 種樹脂疊層製造薄膜狀支持體時可用共擠製法或疊置法製 造’此時可依—般躲製造疊層薄膜之方法，可在 樹脂之層間設置貼膠層。此種薄膜狀支持體之 ^ 度及延伸特性、放射線透過性觀點，通常2〇〜3〇〇又’由強 設置於薄膜狀支持體上之粘膠劑，只要是適當。 磨加工完了後，從晶圓剝除粘膠帶時不會引起㊂，螟化研 或無粘膠劑殘留而污染晶圓表面，則均可用，^，之破鵪 用受紫外線照射時會硬化而立體網狀化且枯著力^歲好使 在剝除後不會有在晶圓表面留下粘膠劑等殘留物胃降低使 硬化塑粘膠劑。此種紫外線硬化型粘膠劑，只 $紫外線 線硬化性均可用，例如對100重量份之2-乙基·已―、有紫外 酯與正丁基丙烯酸酯之共聚物混合5〜200重量份^"兩烯酸 碳雙鍵之（甲基）丙烯酸酯化合物及添加適量之具有碳〜 及光增感劑以及習用之粘性賦與劑、軟化劑、备/起始劑 等組成之钻膠劑。 ^匕防止劑 16 200402786 設置於此薄膜狀支持體上之放射線硬性性粘膠劑層 之厚度通常為10〜2〇〇//in，如此可使其密貼於圖案面。 適合依本發明製造方法加工之晶圓之種類並無特別 限制，但最好是半導體晶圓，例如矽及鎵-砷等化合物半導 又說明書中所謂晶圓是指在上面通過加工形成有集 體電路圖案之晶圓及無施加該種加工之晶圓。對形成有電 路圖案之晶圓實行研磨加工時，將本發明之粘膠帶作為保 護粘膠帶貼合於電路圖案表面，如此即可防止研磨加工及 應力消除處理時產生之研磨粉屑或化學物之污染，哎防止 研磨加工時因碰衝發生晶圓本身之破損。 〆 依本發明之晶圓製造方法研磨之晶圓適用於ic卡或 智慧卡等。此種半導體用晶圓之薄膜化研磨加工，如 括以下之步驟： (a)在晶圓的背面研磨前，預先於電路圖案表面一邊 加熱一邊貼合枯膠帶，然後沿晶圓之形狀切除餘之粘膠 帶； (b)將晶圓之背面研磨使其薄膜化； (C)=晶圓之背面研磨完了後’由研輯置之爽持台 ^cktaMe)取下晶圓前，對構成該轉帶之▲圓形狀保 脂層，從研磨而發熱之加熱狀態冷卻該 -日日圓城雜層硬化至可將晶靜狀 坦狀之硬度； 1 (d)以貼合有粘膠帶之狀態輸送。 λ n iff M *-v 、·- 17 200402786 在上述之步驟（a)之於晶圓背面實行研磨前，預先於’-電路圖案表面，貼合表面保護膠時，最好將粘膠帶一邊加熱 [ 至其構成晶圓形狀保持層之樹脂的一次溶融轉變溫度或玻 璃化轉變點以上一邊貼合。若是將可因化學反應硬化之紫 外線硬化樹脂等與該等晶圓形狀保持層併用之場合，最好 於上述步驟（a)及（b)中間增加一個步驟以便預先用紫外線 照射等所定方法使該紫外線硬化樹脂硬化。 本發明之晶圓製造方法，對適用於1C卡或智慧卡等超 薄膜化之晶圓的研磨及運輸尤其可發揮其效果，且能從平漏 坦狀的貼合保持有薄膜化的晶圓之粘膠帶順利剝離膠帶， 同時能順利將其存放於晶圓盒中。使用本發明之方法時， 可用既有之原本生產線及裝置實行薄膜化晶圓之製造。 另外，本發明之晶圓粘膠帶具有晶圓形狀保持層，可 通過加温條件之不同使該粘膠帶發生軟化—硬化變化，故極 適合使用於上述薄膜化晶圓之製造方法。 【實施方式】 次依實施例更詳細的說明本發明，但本發明不受該等、 實施例之限制。 ^ 實施例1 於由厚度100/zm之乙烯-乙酸乙烯共聚合物構成之薄 膜狀支持體（1)上塗佈由厚度60/zm之具有一次熔融轉變溫- 度約50°C ( —次熔融轉變溫度係指加熱前有秩序配向整合 ， 的聚合物的特定部分因加熱而變成無秩序狀態時之溫度） 之侧鏈結晶性聚合物構成之樹脂層（以具ClCM以下直鍵烧 a Α Γ 、 18 200402786 基侧鏈之丙烯酸酯為主成份之聚合物）作為晶圓形狀保持 層（2)，再於該晶圓形狀保持層（2)上塗佈厚度30# m之紫外 線硬化性粘膠劑層（3)[此粘膠劑係由100重量份之c〇ponil N-3497(日本合成化學公司製）、〇· 6重量份之c〇ronate L-55E(日本urethan公司製之異氰酸鹽硬化劑）及ι· 4重量 份之Irugacure 184(Chibafine chemical公司製之紫外線 硬化起始劑）調製之組成物]，製取粘膠帶（如第2圖所示）。 然後用習知之枯膠帶貼合裝置（日東電工社製DR8500II )將 該粘膠帶加熱至50°C之狀態貼合於直徑8英吋之半導體晶 圓的表面，然後使用背面研磨機（Disco公司製，j)FG85〇(商 品名））研磨晶圓之背面侧，使晶圓厚度減薄至5〇//m。繼 之’於該背面研磨機（BG裝置）的晶圓吸附固定台上將該晶 圓冷卻至一次熔融轉變溫度以下之室溫（23。〇，使晶圓形 狀保持層硬化成可將薄膜化之晶圓形狀保持平坦狀之硬度 後’檢查其疋否可存放於晶圓盒内及晶圓有無破損，從而 確濕其向下一製程之輪送性。進而，使用既有之保護用粘 膠剝離裝置（日東電工社製HR85削（商品名），對貼合之枯 膠帶照射5G0nJ/em2科線之後，於加錄諸薄膜化之晶 ®剝離祐膠帶，測試制離之容易性及檢查晶圓有無破損作 為膠帶剝離性指標。結果示於下表丨。 ；： 另外’除使用具有一次熔融轉變溫度約50°C之侧鏈結 曰曰曰性聚合物（以含碳原子1〇以上之直鍵狀烧基作為侧鍵之 丙烯酸酯為主成分之聚合物）之外，其餘職上述進行試 驗’結果獲得同樣之結果。 mm 19 200402786 實施例2 於厚度100# m之聚對苯二曱酸乙酯構成之薄膜狀支 ，體上塗佈由厚度30 之具有第一次熔融轉變溫度約5〇 C之侧鏈結晶性聚合物構成之樹脂層（與實施例丨同樣之以 丙烯酸酯為主成份構成之聚合物）作為晶圓形狀保持層，再 於該晶圓形狀保持層上塗布厚度30//m紫外線硬化型樹脂 層（由100重量份之2—乙基己基丙烯酸酯與正戊基丙烯酸酯 之，^合體、80重量份之二季戊四醇一羥基五丙烯酸酯及i 重篁份之作為光起始劑之2—羥基-環己基苯基甲酮的混合 塗佈厚度30 A m之由2—乙羥基丙烯酸酯及正丁基丙烯 I酉曰之共聚合物構成之丙烯酸系粘膠劑作為粘膠劑層，製 ，粘膠帶。然後與實施例1同樣，將該粘膠帶貼合於半導體 曰，曰圓的表面後，從膠帶表面照射紫外線100J/cm2。繼之 例剝除粘膠帶時除了不照射紫外線之外，其餘悉與實施 雜同樣，在薄膜研磨加工處理後，實行晶圓之輸送性及剝 離性之試驗。結果示於表丨。 支持於厚度100之等規立體聚丙烯樹脂構成之薄膜狀 體上’塗佈厚度100//m、玻璃化轉變點60°c之由苯乙 、，繼丁一歸共聚合體構成之樹脂層作為晶圓形狀保持層 正六之再在其上塗佈厚度30 之由乙基己基丙烯酸酯及 '基丙稀酸酯之共聚合物構成之丙烯酸系粘膠劑作為粘 ^丨層’製取枯膠帶。與實施例2同樣，對該粘膠帶實行薄 、研磨加工處理後之晶圓輸送性及剝離性試驗。結果示於 r> 7* 20 200402786 表1 〇 除不設置晶圓形狀保持層之外，其餘悉依實施例！調 製枯膠帶’經薄膜研磨加工處理後，實行晶圓輸造性及剝 離性試驗，所得結果示於表1中。 i匕較例2 除不設置晶圓形狀保持層之外，其餘悉依實施例2調 製钻膠帶’經薄膜研磨加工處理後，實行晶圓輸造性及剝 離性試驗，所得結果示於表丨中。 各試驗之評估基準如下： (1) 現有貼合裝置適合性 ·〇：能夠在無氣泡卷入之情形下貼合於晶圓 x :有氣泡卷入 (2) 50 // πι薄膜研磨性 〇··無晶圓的破損及微細龜裂發生 x :有晶圓的破損及微細龜裂發生 (3) BG裝置（背面研磨裝置）内之輸送性 〇：能以真空吸附臂吸附，可輸送 X :在真空吸附臂發生吸附失誤 Ό (4) 日日圓盒内之存放性 〇··能良好的存放，且不接觸於上下段、之晶圓 χ ·不能良好的存放或存放後因晶圓之撓曲變形 而接觸於上下段之晶圓 (5) 現有剝離裝置適合性 Λ Λ 〇 Γ- 21 200402786 〇：能使晶圓不受損傷的剝離t-state temperature. From this point-the temperature is raised to reach point B after melting. The temperature at this time was the melting temperature Te. In this book, "the shape of the thin-film crystal is kept flat;: the second means that the polished wafer is held by the tape without deformation or deflection, etc. by drilling tape, which can be used. The adsorption f (sucti〇narii is conveyed and stored in the wafer box. There is a Γ month book: the "softening-hardening change" refers to the conversion of the non-holding layer into a shape that can maintain the crystal shape— '' 、 卩 is changed from a flexible state to a flat shape. 11 200402786 It means the hardness of the wafer shape. The above-mentioned hardening and softening are reversible. The present invention is to harden to a thin film. Before the wafer shape is maintained, the adhesive tape with the wafer shape retaining layer is kept flat, and the wafer shape retaining layer is preliminarily bonded to the wafer before the polishing process is performed. The wafer is fixed and held on the stage of the wafer suction and fixing stage of the polishing machine, and the wafer shape retaining layer of the adhesive tape is hardened. Therefore, the wafer and the adhesive tape can be maintained in a flat state together. Conveying and storing in crystal Furthermore, since the hardness of the wafer shape retaining layer of the adhesive tape of the present invention can be reversibly changed, when peeling the adhesive tape from a thin film wafer, a conventional tape peeling device can be used to adsorb the crystal. In a round state, the adhesive tape can be peeled off by bending it in a direction of 180 degrees, so that a thin-film wafer can be easily produced. The adhesive tape that can be used in the wafer manufacturing method of the present invention constitutes at least one layer of a film-like support, Or the middle of the film-shaped support and the adhesive layer applied to the film-shaped support has a reversible change in hardness due to temperature differences such as heating or cooling, that is, it is hardened from a soft state to maintain the shape of the wafer flat Wafer shape retaining layer with the property of the hardness of the shape. The "temperature at which the wafer shape can be kept flat" in this specification refers to the temperature at which the resin constituting the wafer shape retaining layer is substantially cured from the softened state. Here The hardened state can be maintained below the temperature. This temperature may be a temperature below the primary melting and melting point or glass transition point of the resin constituting the 0-shape retaining layer every day. "The temperature at which the wafer shape can be kept flat" is best selected arbitrarily in the range of 10 ~ 30 ° C, but the room temperature setting of the place where the grinding process is performed is the most preferable. This adhesive tape As shown in the sectional view of Fig. 2, 1 is a thin film support, 2 is a wafer shape retaining layer, and 3 is an adhesive layer for bonding a wafer. The wafer shape retaining layer of the adhesive tape of the present invention is cooled It has the property of being hardened to maintain the flatness of the wafer shape. This wafer shape retaining layer is made of a material that undergoes a softening-hardening reversible change due to the surrounding temperature. Although the softening point is somewhat dependent on the application and method of use, etc. The difference is that it can be selected in the range of 30 to 100 ° C, preferably in the range of 40 to 6 ° C. However, as long as softening and hardening can occur within a predetermined temperature boundary, a temperature outside the above temperature range can also be selected. Because the wafer shape retaining layer of the adhesive tape of the present invention has a reversible softening-hardening change property, when the back surface of the wafer is polished with a grinder, the resin constituting the wafer shape retaining layer itself will follow the temperature of the workpiece. It will be softened by heating when it rises, showing appropriate cushioning properties, and exerting the effect of preventing wafer damage. When the adhesive tape is peeled from the wafer after lapping and softened, the tape itself becomes flexible, so it is suitable to perform the U-fold method of the degree of bending of the tape using a conventional belt tape device. It is preferable that the wafer shape retaining layer of this band contains a side chain crystalline polymer that changes by heat melting and hardening at the beginning of melting. This polymer will soften at a temperature of T1 or higher, and it will be softened when the temperature is higher than T1. ::: Acrylic acid vinegar, methyl propyl straight chain alkyl group, the second one is 10 carbon atoms or more. One is taken as a straight chain alkyl group containing 10 to 24 or less slave atoms, the vinegar of acrylic acid and methacrylic acid vinegar described in 200402786, (fluorenyl) propane, acetic acid vinegar, (曱 = 为(Fluorenyl) n-butyl acrylate, isobutyl (meth) acrylic acid; ^, (fluorenyl) propane = vinegar, (meth) acrylic acid, ethyl ethyl acetate, (fluorenyl) ^ 2 silk vinegar (Methyl) glyceride, (methyl), (fluorenyl) propylene, etc. Lice δ and propylene, etc., but it is not limited to the shape of the Japanese yen when repairing when someone repairs it. The glass transition point is the boundary hair = 疋 Get it ready for use-'. This resin may harden and change the thermoplastic resin, but it will be prepared when the temperature is below ^: :: softens at the temperature of ^ succinic copolymer ： Hard: styrenic wall can be exemplified by styrene-zen picking and scoring, and the crystal round method glass used in the adhesive tape of the present invention "" The glass transition point of resin must be Film-shaped support 4 glass turn & point below. This kind of thermoplastic resin is re-exported into a wafer with a thin film = port-the resin (polymer) constituting the crystal ® hybrid layer of the band is not limited to the above The "informer" can be used as long as the resin can be reversibly softened and hardened due to the surrounding temperature at a predetermined temperature of I. The wafer shape retaining layer of the adhesive tape can also contain ultraviolet curing resin and other factors. Resin that hardens due to chemical reaction. In this case, the wafer shape retaining layer is composed of at least two types of resin, that is, a radiation-hardening resin hardened by radiation and a side that has properties of crystallizing when cooled to a predetermined temperature. Bonded crystalline polymers and / or thermoplastic greases that soften when heated to a temperature above the glass transition point 14 δδδ45 2UU4U2 / 80 degrees are widely used by users, > τ θ. This type of radiation hardening tree has at least two W ^ She ^ will be a three-dimensional (stereo) network in the molecule, for example: low molecular weight compounds of three carbon: carbon double bond. Specific acrylic acid vinegar, Thai acetyl dipropane dicarboxylic acid , Tetramethylammonium methylbenzene, dipentaerythrene = dipropionate, pentaerythritol tetraacrylic acid vinegar, u minus five __ purpose, dipentaerythritol hexaacrylic acid diol-propylene monoacrylate, r, 6 ~ hexane Alcohol diacrylate, polyethylacrylate, or low-ester acrylate, etc. In addition to the enoic acid acetic acid § compounds, urinary propylene === glycol compounds and polyvalent isocyanate compounds ( Examples of wind stupid one-isomer reduction, 2,6-methine diisocyanate, 1,3-methylene diiso, vinegar, "monoxylylene diisocyanate, diphenyl : Isocyanic acid, etc.) terminal iso-grade urinary urinary polyurea obtained by reaction: hair and then with acrylic esters or methacrylic acid esters having a radical (for example, 2-diacrylate, 2-hydroxyethylmethyl) Acrylate, 2-hydroxypropylpropene-1®, 2 ~ hydroxypropylfluorenyl acrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.). The thickness of the wafer shape retaining layer is not particularly limited. As long as the thickness is maintained, the thickness of the wafer shape retaining layer is preferably as thin as possible, preferably from 10 to 20 om, more preferably from 30 to 1 〇〇 # m. . e The film-like support of the adhesive tape of the present invention is usually made of plastic or rubber. If the wafer-shaped retainer or adhesive uses a radiation-hardening resin or charm, the film-shaped support must be made of a radiolucent material. If 88SS8 15 200402786 is hardened by ultraviolet radiation, use it. . This film-like support system consists of, for example, polyethylene, polypropylene, ethylene diene polymer, polybutene ~ [1], poly + methylpentane [1], acetoic acid, diabolite, etc. , B = -propyl _ interpolymer, ionomer (ion cross-linked polymer), etc. ^ # olefinic hydrocarbons alone polymers or copolymers, or their dens, strips. The purpose of i, polycarbonate, polymethacrylic acid, etc., thermoplastic elastomers such as polyurethane, styrene-butadiene polymer, etc. can be selected arbitrarily according to required characteristics. Other film-like supports can be manufactured according to the known extrusion method. When the film-like support is manufactured by laminating resins, the co-extrusion method or the stacking method can be used to manufacture the laminated film. You can set an adhesive layer between the resin layers. From the viewpoints of the degree and elongation characteristics and radiation permeability of such a film-shaped support, usually 20 to 300, and an adhesive agent provided on the film-shaped support is used as long as it is appropriate. After grinding, peeling of the adhesive tape from the wafer will not cause radon. It can be used if the wafer surface is not contaminated by adhesives and the surface of the wafer is polluted. The three-dimensional network is reticulated and withered, so that after the peeling, no residues such as adhesives are left on the wafer surface. The stomach is lowered and the plastic adhesive is hardened. This kind of UV-curable adhesive can be used only with UV-curing properties. For example, it is mixed with 5 to 200 parts by weight of 100 parts by weight of 2-ethyl · hexyl, copolymer with ultraviolet ester and n-butyl acrylate. ^ " Dimethic acid carbon double bond (meth) acrylate compound and adding a suitable amount of carbon with carbon ~ and light sensitizers and conventional viscosity modifiers, softeners, preparation / starter, etc. Agent. ^ Darkener 16 200402786 The thickness of the radiation-hardening adhesive layer provided on the film-shaped support is usually 10 to 2000 / in, so that it can be closely adhered to the pattern surface. The types of wafers suitable for processing according to the manufacturing method of the present invention are not particularly limited, but semiconductor wafers, such as silicon and gallium-arsenic compound semiconductors, and the so-called wafers in the specification refer to collectives formed by processing on them. Circuit pattern wafers and wafers without such processing. When performing a polishing process on a wafer on which a circuit pattern is formed, the adhesive tape of the present invention is attached to the surface of the circuit pattern as a protective adhesive tape, so that the grinding dust or chemical substances generated during the polishing process and the stress relief process can be prevented. Contamination, to prevent damage to the wafer itself due to bumps during grinding.晶圆 The wafer polished according to the wafer manufacturing method of the present invention is suitable for IC cards or smart cards. The thin film polishing process of such a semiconductor wafer includes the following steps: (a) Before grinding the back surface of the wafer, apply dry tape on the circuit pattern surface in advance while heating, and then remove the remaining material along the shape of the wafer. Adhesive tape; (b) Grind the back surface of the wafer to make it thin; (C) = After the back surface of the wafer has been ground, 'from the cooler table set by the research institute (cktaMe) before removing the wafer, The ▲ circular grease-retaining layer of the belt is cooled from the heated state of grinding and heating, and the -Japanese-Japanese-Yencheng complex layer is hardened to a crystal-like tan-like hardness; . λ n iff M * -v, ·-17 200402786 Before the polishing of the wafer back in the above step (a), it is better to heat the adhesive tape on the surface of the '-circuit pattern before applying the surface protection adhesive. [It adheres to the temperature above the primary melting transition temperature or glass transition point of the resin constituting the wafer shape retaining layer. In the case where a UV-curable resin or the like that can be hardened by chemical reaction is used in combination with these wafer shape retaining layers, it is preferable to add a step between the above steps (a) and (b) so that the predetermined method such as ultraviolet irradiation can be used to make The UV-curable resin is hardened. The wafer manufacturing method of the present invention is particularly effective for grinding and transporting wafers suitable for ultra-thin film wafers such as 1C cards and smart cards, and can maintain thin film wafers from flat-shaped bonding. The adhesive tape can peel off the tape smoothly, and can be stored in the wafer cassette at the same time. When the method of the present invention is used, thin film wafers can be manufactured using existing production lines and equipment. In addition, the wafer adhesive tape of the present invention has a wafer shape retaining layer. The adhesive tape can be softened and hardened by different heating conditions. Therefore, the wafer adhesive tape is extremely suitable for the above-mentioned thin film wafer manufacturing method. [Embodiment] The present invention will be described in more detail in accordance with the examples, but the present invention is not limited by these examples. ^ Example 1 A film-like support (1) composed of an ethylene-vinyl acetate copolymer having a thickness of 100 / zm was coated with a primary melting transition temperature of 60 / zm and a temperature of about 50 ° C (—times) Melt transition temperature refers to the temperature at which a specific part of the polymer is ordered and integrated before heating. The temperature is the temperature at which a specific part of the polymer becomes disordered due to heating. The resin layer is composed of a side chain crystalline polymer (with a straight bond below ClCM and a Α Γ). , 18 200402786 Polymer based on acrylate on the side chain) as the wafer shape retaining layer (2), and then the wafer shape retaining layer (2) is coated with 30 # m UV-curable adhesive Agent layer (3) [This adhesive is made of 100 parts by weight of coponil N-3497 (manufactured by Nippon Synthetic Chemical Co., Ltd.), and 0.6 parts by weight of coronate L-55E (isocyanide manufactured by Japan urethan company). Acid salt curing agent) and ι · 4 parts by weight of a composition prepared by Irugacure 184 (ultraviolet curing initiator made by Chibafine Chemical Co., Ltd.) to prepare an adhesive tape (as shown in FIG. 2). Then, this adhesive tape was heated to 50 ° C with a conventional dry tape bonding device (DR8500II manufactured by Nitto Denko Corporation), and then bonded to the surface of a semiconductor wafer having a diameter of 8 inches, and then a back-side grinder (manufactured by Disco) was used. J) FG85 (brand name)) polished the back side of the wafer to reduce the wafer thickness to 50 // m. Following this, the wafer was cooled to a room temperature (23.0 ° C) below the primary melting transition temperature on the wafer suction and fixing table of the back grinder (BG device), and the wafer shape retaining layer was hardened to thin film. After the wafer shape is kept flat and hardness, 'check whether it can be stored in the wafer box and the wafer is not damaged, so as to ensure its rollability to the next process. Furthermore, use the existing protective adhesive. Adhesive peeling device (HR85 cut (trade name) manufactured by Nitto Denko Corporation). After applying the 5G0nJ / em2 branch line to the bonded dry tape, a thin film of crystallized peeling tape was added to test the ease of inspection and inspection The presence or absence of damage to the wafer is an indicator of tape peelability. The results are shown in the table below: In addition, 'except when using a side chain with a primary melting transition temperature of about 50 ° C, a polymer (with a carbon atom of 10 or more) In addition to the straight bond type alkoxy group as the side bond acrylate polymer as the main component), the rest of the above-mentioned test results obtained the same results. Mm 19 200402786 Example 2 Polyparaphenylene diene with a thickness of 100 # m Ethyl acetate The film-like branch is coated with a resin layer composed of a side chain crystalline polymer having a first melting transition temperature of about 50 ° C with a thickness of 30 (the same as in Example 丨, which is mainly composed of acrylate). Polymer) as a wafer shape retaining layer, and then a UV curing resin layer (containing 100 parts by weight of 2-ethylhexyl acrylate and n-pentyl acrylate) is coated on the wafer shape maintaining layer. ^ Complex, 80 parts by weight of dipentaerythritol monohydroxypentaacrylate and 1 part by weight of 2-hydroxy-cyclohexyl phenyl ketone as a photoinitiator in a mixed coating thickness of 30 A m An acrylic adhesive composed of a copolymer of hydroxy acrylate and n-butyl propylene was used as an adhesive layer to prepare an adhesive tape. Then, in the same manner as in Example 1, this adhesive tape was bonded to a semiconductor. After the round surface, the surface of the tape is irradiated with ultraviolet rays of 100 J / cm2. The next example is the same as the implementation of the film except that the ultraviolet ray is not irradiated when the adhesive tape is removed. And peeling test The results are shown in Table 丨. Supported on a film-shaped body made of isotactic three-dimensional polypropylene resin with a thickness of 100 'coating thickness of 100 // m and glass transition point of 60 ° C The resin layer composed of the copolymer is used as a wafer shape retaining layer. The acrylic adhesive made of a copolymer of ethylhexyl acrylate and 'acrylic acid acrylic ester having a thickness of 30 is applied thereon.丨 Layer 'was used to prepare dry tape. As in Example 2, the adhesive tape was subjected to a thin and polished wafer transportability and peelability test. The results are shown in r > 7 * 20 200402786 Table 1 Except for the wafer shape retaining layer, the rest are described in the examples! After the film preparation process is performed on the prepared dry tape, the wafer transportability and peelability tests are performed. The results are shown in Table 1. Comparative Example 2 Except that the wafer shape retaining layer is not provided, the rest of the drill tape is prepared in accordance with Example 2 after film grinding processing, and wafer transportability and peelability tests are performed. The results are shown in Table 丨in. The evaluation criteria of each test are as follows: (1) Applicability of existing bonding devices · 〇: Can be bonded to the wafer without air bubble entrainment x: Air bubble entrainment (2) 50 // π film abrasiveness ·· No wafer breakage and micro cracks occur x: Wafer breakage and micro cracks occur (3) Transportability in BG device (back grinding device) 〇: Can be adsorbed by vacuum suction arm, can transport X : Adsorption error occurred in the vacuum suction arm. (4) Storage in the Japanese yen box.... Can be stored well without contact with the upper and lower sections. Wafers cannot be stored or stored properly because of the wafer. Wafers that are deformed and come into contact with the upper and lower segments (5) Applicability of existing stripping devices Λ Λ 〇Γ- 21 200402786 〇: Stripping without damage to the wafer
X 實施例 1 2 3 現有貼合裝 置之適合性 〇 〇 〇 ( 5〇/zm薄膜 硏磨 〇 〇 〇 ( BG裝置之輸 送性 〇 〇 〇 ) 晶圓盒內之 碰性 〇 〇 〇 現有剝離裝 置之適合件 〇 〇 〇 X •不能從晶圓剝離或剝離後之晶圓有受損傷 表 1__ 較X Example 1 2 3 Applicability of existing laminating device (500 / zm film honing 00 (transportability of BG device) 00) Impact in wafer cassette Suitable pieces 〇〇〇〇X • Can not be peeled from the wafer or the wafer is damaged after peeling Table 1__ Compare
X λ由上表1之比較例1及2之結果可知，使用不具有晶圓 f狀保持層之枯膠帶時，在晶圓的運輸中從真空吸附臂脫 落以致無法進行後續的處理步驟。比較例3時，由於晶圓形 狀保持層為玻璃化轉變點120 °C之苯乙婦—丁二稀共聚合 物’因此該粘膠帶之薄膜狀支持體本身會由於晶圓形狀保s 持層軟化時之加熱溫度而起熔融，以致會枯附於貼合滾的、 表面並於晶圓及點膠帶之界面卷入氣泡，使得無法使用現肇 有之貼合裝置’同時在薄膜研磨時亦會因貼合時卷入的氣 泡發生微細龜裂，以致不能實行薄膜研磨加工。 對此’依本發明方法之實施例1〜3在現有貼合裝 t 置之適合性、50/zm薄膜研磨性、BG裝置内之輸送性、‘ 晶圓盒内之存放性及現有剝離裝置之適合性等各方面 均良好’故能有效率的實現薄膜化晶圓之製造。 22 200402786 【圖式簡單說明】 第1圖為本發明晶圓粘膠帶之晶圓形狀保持層之差示掃描量 熱法(DSC)測得之熱量-溫度曲線圖； 第2圖為本發明晶圓粘膠帶之一例之斷面圖。 【符號說明】 1…薄膜支持體 2…晶圓形狀保持層 3…熔融開始溫度 Ti…熔融開始溫度 Tm…一次熔融轉變溫度 Te…熔融完了溫度X λ can be seen from the results of Comparative Examples 1 and 2 in Table 1 above. When the dry tape without the f-shaped holding layer of the wafer is used, the wafer is detached from the vacuum suction arm during the transportation of the wafer, so that subsequent processing steps cannot be performed. In Comparative Example 3, since the wafer shape retaining layer is a styrene-butadiene copolymer with a glass transition point of 120 ° C, the film-shaped support of the adhesive tape itself will retain the layer due to the wafer shape. The heating temperature at the time of softening causes melting, so that it will adhere to the surface of the bonding roll, and become involved in air bubbles at the interface of the wafer and the adhesive tape, making it impossible to use the existing bonding device. Due to the fine cracks caused by the air bubbles entrained during bonding, the film cannot be polished. In response to this, 'the suitability of Examples 1 to 3 according to the method of the present invention in the existing laminating device, the 50 / zm film lapping property, the transportability in the BG device,' the storage property in the wafer box, and the existing peeling device It has good suitability and other aspects, so it can efficiently realize thin film wafer manufacturing. 22 200402786 [Schematic description] Figure 1 is the heat-temperature curve measured by differential scanning calorimetry (DSC) of the wafer shape retaining layer of the wafer adhesive tape of the present invention; Figure 2 is the crystal of the present invention Sectional view of an example of round adhesive tape. [Description of symbols] 1 ... thin film support 2 ... wafer shape retaining layer 3 ... melting start temperature Ti ... melting start temperature Tm ... primary melting transition temperature Te ... melting completion temperature