TR202021406A2 - Dielektriksel Olarak Derecelendirilmiş RF-Geçirgen Seramik Matris Kompozit Yapıların Üretimi - Google Patents
Dielektriksel Olarak Derecelendirilmiş RF-Geçirgen Seramik Matris Kompozit Yapıların ÜretimiInfo
- Publication number
- TR202021406A2 TR202021406A2 TR2020/21406A TR202021406A TR202021406A2 TR 202021406 A2 TR202021406 A2 TR 202021406A2 TR 2020/21406 A TR2020/21406 A TR 2020/21406A TR 202021406 A TR202021406 A TR 202021406A TR 202021406 A2 TR202021406 A2 TR 202021406A2
- Authority
- TR
- Turkey
- Prior art keywords
- ceramic
- ratio
- layers
- silica
- dielectric constant
- Prior art date
Links
- 239000011153 ceramic matrix composite Substances 0.000 title abstract description 16
- 238000004519 manufacturing process Methods 0.000 title description 14
- 239000000919 ceramic Substances 0.000 abstract description 43
- 238000000034 method Methods 0.000 abstract description 22
- 239000000835 fiber Substances 0.000 abstract description 15
- 239000002131 composite material Substances 0.000 abstract description 14
- 239000004744 fabric Substances 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 8
- 230000000930 thermomechanical effect Effects 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 6
- 238000013459 approach Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000010304 firing Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 238000005470 impregnation Methods 0.000 abstract 1
- 238000009940 knitting Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 47
- 239000010410 layer Substances 0.000 description 27
- 239000000377 silicon dioxide Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 239000000843 powder Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000010802 sludge Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
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- 229910052863 mullite Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
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- 239000010453 quartz Substances 0.000 description 3
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- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
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- 238000003780 insertion Methods 0.000 description 2
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- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
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- 229920001721 polyimide Polymers 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
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- 239000004094 surface-active agent Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
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- 239000000156 glass melt Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 physical Substances 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
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- 238000000518 rheometry Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004162 soil erosion Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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- C04B35/62605—Treating the starting powders individually or as mixtures
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- C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
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- C04B35/628—Coating the powders or the macroscopic reinforcing agents
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Abstract
Mevcut buluş, bir CMC (Seramik Matris Kompozit) yapısının, ayrı kompozit tabakalarının katı miktarı (SL) oranını değiştirerek dielektrik sabitinin bir fonksiyonu olarak derecelendirilmesini öneren bir yöntemdir. Çamur, seramik kumaşlara emprenye edilerek ya da seramik elyaflar üzerine kaplanarak uygulanır. Nihai yapı, prepreglerin üst üste istiflenmesi veya belirli SL oranıyla seramik elyafların örülmesi, kurutulması ve pişirilmesiyle hazırlanır. Bu yaklaşım, yalnızca katmanlar arasında termomekanik ve kimyasal uyumluluğu sağlamakla kalmaz, aynı zamanda sandviç yapılara göre üstün bir geniş bant performansı ile sonuçlanır.
Description
TARIFNAME DIELEKTRIKSEL OLARAK DERECELENDIRILMIS RF-GEÇIRGEN SERAMIK MATRIS KOMPOZIT YAPILARIN ÜRETIMI Teknik Alan Bulus, genis bant RF geçirgen davranis gösteren, dielektriksel olarak derecelendirilmis seramik matris kompozit yapilarin üretilmesi için bir yöntem ile ilgilidir. Teknigin Bilinen Durumu Ses hizinin 5 veya daha fazla kati hizla uçan yapilar hipersonik rejime ulasir. Füze radomlari, burun konileri, RF-geçirgen pencereleri/basliklari/kalkanlari bu kosullarda agir termal, mekanik ve çevresel yüklere maruz kalir. Mühendislik plastikleri ve/veya seramik elyaf takviyeli plastikler bu rejime özgü tipik kosullara dayanamamaktadir. Uçus süresine bagli olarak sicakliklar kolaylikla 800 CClyi a sabilmektedir, bu durum seramikler disinda baska bir malzeme seçenegi birakmamaktadir. Bu tarz uygulamalar için monolitik yigin seramikler; çamur döküm ve cam ergitme kaliplama/santrifüj gibi klasik yöntemlerle üretilir. Ancak bu yöntemlerin üretim ölçütleri elverisli degildir. Bu yöntemler, belirli dielektrik özelliklere (dielektrik sabit, dielektrik kayip, vb.) ve tasarim kisitlarina (kalinlik, yüzey pürüzlülügü, düzlemsellik, vb.) göre dikkatlice seçilmis ve eslestirilmis malzemelerden olusan çok katmanli genis bant RF- geçirgen yapilarin gelistirilmesi için elverisli degildir. CMC (Ceramic Matrix Composite /Seramik Matris Kompozit) teknolojisiyle üretilen genel yapilara dair pek çok bilgi bulunmaktadir. Arttirilmis kirilma toklugu, yüksek termal yalitim kapasitesi, hafiflik, sekillendirme kolayligi CMC,nin yigin seramiklere göre ayirt edici faydalaridir. CMC teknolojisi, süper/hipersonik hizlarda uçan yapilarin üretilmesinde önemli bir rol oynamaktadir. Ancak açik literatürde bu tür CMC*lerin dielektrik özellikleri hakkinda sinirli bilgi vardir. Bu oldukça beklenmedik bir durumdur çünkü yüksek sicakliklara, termal ve termo-mekanik soklara ve yagmur/todkum erozyonuna maruz kalan radomlar, burun konileri, RF-geçirgen pencereleri/basliklari/kalkanlari gibi kritik bilesenleri ideal olarak CMC teknolojisi ile üretilebilir. Nadiren de olsa yukarida bahsedilen uygulamalara yönelik hibrit yapilara dair daha çok bilgi bulunmaktadir. Buradaki "hibrit" ifadesi, mühendislik polimeri (poliimid bal petegi, poliimid veya siyanat ester esasli reçineler ve/veya köpükler) ve seramik elyaf veya kumasin kombinasyonunu belirtmektedir. U.S. Pat. No. 5,738,750 olan basvuruda, içinde silika esasli reçine (agirlikça %35) ile infiltre edilmis silika elyaflarin (agirlikça %65) birlestirilmesiyle olusan kuvars kumas katlar ile kaplanmis bal petegi yapisi bulunan, çok katmanli radom katmanlarinin gelistirilmesi yöntemini açiklamaktadir. Inorganik reçine pirolizden sonra silika ya da silisyum nitrür olusturulmus polisilikon veya polisilazandir. Ancak bu katmanlarin birlestirilmesiyle radom seklinin nasil olusturulduguna dair tanimlamadan net bir sekilde bahsedilmemistir. U.S. Pat. No. 7,118,802 olan basvuruda 6 Mach üzerinde uçan füze radomlarinin gerekliliklerinden bahsetmektedir. Önerilen yapi, kolloid emprenye edilmis FR-CMC yük tasiyici katman ve termal yalitim katmanindan olusmaktadir. Kolloid, agirlikça %40-50 kati madde oranina (alümina veya silika) sahip bir seramik süspansiyon iken, yalitim katmani %45 açikliga sahip seramik parçacik dolgulu bir köpüktür. Katmanlar yüksek sicaklikta kararli bir yapistirici ile yapistirilmaktadir. Genis bant HARM anti-radyasyon füzesinin yapisi [1]"de çizilmistir. Bu modele göre 3 mm kalinliginda düsük dielektrik bal petegi yapisi, ince yüksek dielektrik katmanlar arasinda sikistirilmistir. Açik literatürde paylasilan bilgilere benzer sekilde genis bant radom kurgulanmasina dair bir açiklama bulunmamaktadir. Genis bant frekans çalisan ve hipersonik hizlara yakin/hizlarda/hizlarin üzerinde uçan RF-geçirgen yapilarin üretim teknikleri açik literatürde açiklanmamistir. Genis bant yapilarin gelistirilmesi için klasik yöntemler, ya her biri belirli dielektrik özelliklere sahip katmanlarin istiflenmesiylesiyle sandviç yapilarin olusturulmasi ya da yapinin yüzeyine (örnegin radom duvari) yama gibi fiziksel katmanlarin eklenmesi seklinde olmaktadir. Ancak bu uygulamalar yapisal ve operasyonel kisitlar nedeniyle sinirlidir. o Sandviç yapilarin genis bant özelligi gösterebilmesi için düsük ve yüksek dielektrik katsayili malzemelerden olusur. Bunun için termal ve termo-mekanik soklar yüzünden olusabilecek delaminasyon ve kirilmalari önlemek adina komsu katmanlarin mutlak CTE (Termal Genlesme Katsayisi) uyumlulugu gerekir. 0 Öngörülemeyen dielektrik fazlarin olusumuna ve hareketliligine neden olan asiri termal enerji nedeniyle olusabilecek kontrolsüz dielektrik sabiti bölgelerinden kaçinmak için farkli katmanlarin kimyasal uyumlulugu saglanmalidir. o Sandviç yapilarin çok sinirli kalinlik araliginda yüksek dielektrik katmanlara sahip olmasi gerekir, bu da onlari yukarida belirtilen uyumsuzluk sorunlarindan dolayi kirilmaya daha yatkin hale getirir. o Hipersonik rejimde/civarinda olusan yüksek sicaklik, yama gibi ekli katmanlari hizla bozar. Bu durum özellikle bu tür tabakalar organik yapida ise geçerlidir. Bulusun Kisa Açiklamasi Kati madde (Solids Loading /SL) orani, ürünün nihai yogunlugunu dogrudan etkiledigi için seramigin kolloidal islemlerinde kritik bir parametredir. Yüksek SL orani, malzemenin yogunlugunu ve dolayisiyla dielektrik sabitini artirir. Bu bulusta açiklanan yöntem, her bir kompozit katmaninin SL oranini degistirerek CMC (Seramik Matris Kompozit) yapisinin dielektrik sabitinin bir fonksiyonu olarak derecelendirilmesini önerir. Birbirine benzemeyen malzemelerden olusan sandviç yapilarin aksine, önerilen kompozit yapida yalnizca tek tip seramik malzeme vardir. Bu yaklasim, sadece katmanlar arasinda termomekanik ve kimyasal uyumlulugu saglamakla kalmaz, ayni zamanda sandviç yapilara göre üstün bir genis bant performansi göstermesi ile sonuçlanir. Hipersonik rejime uygun, RF-geçirgen ve genis bant seramik yapilarin imalati karmasik bir süreçtir. Mevcut genis bant radom üretim teknikleriyle karsilastirildiginda, bu patentte açiklanan yenilik asagidaki benzersiz istemlere sahiptir: 0 Seramik kompozit, dielektrik sabitinin bir fonksiyonu olarak derecelendirilir. 0 Her katman için seramik çamurun SL orani degistirilerek derecelendirme yapilir. 0 Çamurun SL oranindaki ayarlamalar malzeme yogunluguna ve dolayisiyla dielektrik sabitine, faktörlerin arasindaki orantiyla dogrudan yansir. o Kompozitin bütün katmanlari sadece tek tip seramik matristen hazirlanir. 0 Tek bir matris malzemesinin kullanilmasi, genel yapinin fiziksel, kimyasal ve termo-mekanik uyumlulugunu saglar. 0 Özel katkilarla birlikte SL orani °A›10,dan %90,a kadar geçerlidir. 0 Her sistem için kabul edilebilir minimum kritik mukavemete (alt Iimit) ve yüksek kararliliktaki kolloid seviyesine (üst limit) bagli olarak yukarida bahsedilen seramik sistemlerin çogu için SL orani %30'dan %80'e kadar geçerlidir. 0 Çamur, düzlemsel yapilarin gelistirilmesi için çesitli biIesimIerde kuvars, siIika, alümina, mullit, alümina/bor oksit/siIika, alümina/itriya, zirkonya gibi sürekli seramik Iierrinden dokunan seramik kumaslara emprenye edilebilir. Her katman islak halde preslenir, kurutqur ve firinIanir. o Çamur banyolarindaki çamur, E-cam, kuvars, siIika, alümina, mullit, alümina/bor oksit/siIika, aIümina/itriya, zirkonya gibi elyaf demetleri üzerine degisik biIesimIerde kaplanabilir, kurutuIabiIir ve silindirik veya konik nesnelerin imalati için boru seklindeki kaIipIarin etrafina sariIabiIir. 0 Teknik, seramik kumas/elyaf ile uyumlu bir matris bilesimi kullanma kolayligi nedeniyle gelistirilmekte oIan seramik kumaslar ve seramik eIyafIar için geçerlidir. 0 Çamur, sürekli seramik kumas/elyaf ile fiziksel, kimyasal ve termo-mekanik uyum saglandigi sürece, daha önce bahsedilen veya özellestirilmis seramik biIesimIerinden herhangi birinden seçiIebiIir. o FarIi maIzemeIere sahip bir kompozit ile karsilastirildiginda, sunuIan yenilik odagi tek tip matris malzemenin özelliklerine daraItarak gelismis mikrodalga tasarim yetenegi ve esnekligi getirmektedir. Sekillerin Açiklanmasi Sekil 1, sinterIenmis farkli kati madde oranlarina sahip fused siIika çamur döküm numuneIerinin yogunlugu arasindaki iliskiyi göstermektedir (tüm numuneIer ayni sicaklikta sinterIenmistir). Sekil 2, islenmemis, A-sandviç ve derecelendirilmis siIikanin araya girme kayiplarinin (s21) simülasyonunu göstermektedir. Tüm frekans araIigindaki kayiplar, derecelendirilmis siIika için 1 dB'nin altindadir (kirmizi noktali çizgi, 1 dB'lik kayip seviyesini temsil eder). Bulusun Detayli Açiklamasi Seramikler, füze radomlari, burun konileri, RF basliklari ve süper/hipersonik hizlarda hareket eden pencereler gibi RF-geçirgen havada tasinan bilesenlerin yaygin olarak kullanilan yapi taslaridir. Bu durum, bu rejimde organik/inorganik/dolgu ilaveli polimerler gibi alternatif malzeme seçeneklerinin kullanimina engel degildir. Bununla birlikte seramikler, önemli ölçüde gelistirilmis mekanik mukavemet, kimyasal ve termal kararlilik ve asinma direnci saglayan güçlü moleküller arasi baglara sahiptir. Ayrica, kimyasal içerigine bagli olarak hem oksitleyici hem de indirgeyici atmosferlerde kullanilabilirler. Kimyasal asinma, yagmur/todkum erozyonu gibi agir çevre kosullari altinda, özellikle yukarida belirtilen yapilarin yüzey sicakligi 1.000 CC'yi astiginda, bunlar aranan çekici özelliklerdir. Geleneksel seramik üretim rotasi, iyi bilinen adimlardan olusur: üretim süreci için ham madde hazirlama, sekillendirme ve atesleme, ardindan isleme (taslama, parlatma, lepleme) ve alternatif olarak malzemenin termal, asindirici ve çevreye karsi dayanikliligini daha da artirmak için kaplama gibi son islemler yapilir. Çesitli teknikler arasinda, süper/hipersonik rejimde çalisan füze radomlari gibi büyük seramik yapilarin üretiminde en yaygin olarak kullanilan çamur döküm ve cam eriyik santrifüj teknigidir. Ilk teknik, alçi bir kalibina yerlestirildiginde sulu bir çamur içinde dagilan seramik tozun kapiler etkiyle sikistirilmasina ve sekillendirilmesine dayanir. Ikincisi, santrifüj kalibi üzerine dökülen ergimis bir cam seramigi sekillendirmek için sicak kaliplama ve/veya sicak santrifüj kullanir. Her iki teknik de yillardir ticari füze radomlarinin üretiminde kullanilmaktadir. Her teknigin avantajlari ve dezavantajlari vardir. Ancak daha genis bir perspektiften bakildiginda, her iki teknigin de önemli sinirlamalari vardir: o Monolitik yigin seramik dogasi geregi kirilgandir. Kirilma katastrofiktir (aninda ve malzemenin tamaminda). o Sekillendirme süreci sinirlidir. Düsük toleranslara sahip karmasik yapilar yalnizca sonrasinda yapilan islemlerle elde edilir. 0 Her iki teknikte de islemlerin verimi oldukça düsüktür. Her iki teknik için üretim verimi yaklasik %40-50'dir. 0 Genis bant özelligi için çoklu katman olusturma, yüksek dielektrik sabitli malzemelerin çok ince katmanlarin, daha kalin düsük dielektrik sabitli katmanlara entegre edilmesi nedeniyle pratikte imkansizdir. 0 Son derece ince, yüksek dielektrik sabitli katman daha kalin, düsük dielektrik sabitli katmana baglansa bile farkli katmanlar arasindaki fiziksel, kimyasal, termal ve termo-mekanik (CTE) uyumsuzluk, delaminasyona, kirilmaya veya islevsiz kalmaya yol açar. O/O CMC*Ier (Oksit/Oksit CMC), monolitik yigin seramiklerin yukarida bahsedilen eksikliklerini giderebilir. Bu malzemeler oksit elyaftan (ag) ve oksit matristen olusur. Genellikle oksit seramik elyaf malzemesi alüminadir (AI203). Ancak alümina, yüksek sicakliklarda tane büyümesine ugrar dolayisiyla sürünür. Bu nedenle, sürünme davranisini geciktirmek/önlemek için genellikle Si02 ve 8203 ile karistirilir. Bu oksitIeri Al203 ile karistirmanin bir baska nedeni, kompozitin oksidasyonunu ve alkali direncini iyilestirmektir [2-4]. Kompozitin diger kismi olan matris, seramik elyaf ile uyumlu alümina, silika, mullit, zirkonya gibi oksit seramiktir. Seramik tozu, çözücü, yüzey aktif madde, baglayici ve benzeri fonksiyonel bilesenlerin karisimi olan bir çamur olarak hazirlanir. Bu bilesenlerin her birinin belirli bir islevi vardir; seramik tozu, eIyafIarIa birlikte kompozitin fiziksel, termal, mekanik ve eIektrikseI özelliklerini veren islevsel unsurdur, çözücü tozun tasiyicisidir, baglayiciyi çözerek karisimin reolojisini belirler, yüzey aktif madde ise yüzey özeIIikIerini degistirerek tozun reaktivitesini artirir. Seramik tozu, çamurun kati içerigini temsil eder ve kompozitin matrisini olusturur. Çamurdaki diger katilar, çok daha düsük sicakliklarda oksitIenen katki maddelerdir. Bu nedenle SL orani, çamurdaki seramik tozun agirlik yüzdesi veya oranidir. SL orani kritik bir çamur parametresidir; toz, çamur içinde homojen bir sekilde dagildiginda daha yüksek SL'ye sahip bir çamur için birim hacim basina parçaciklar arasi temas daha yüksektir. Bu durumda malzemenin yas yogunlugunda bir artis görülür, ayni sekilde sinterIeme süresince boyun verme ve parçaciklar arasi difüzyon artisi sebebiyle sinterIenme sonrasi yogunluk da gelisme görülür. Ayni sinterIeme sicakliginda ateslenen yüzde 50, 60, 70 ve 80 SL oranlarinda hazirlanan çamur döküm fused silika (SCFS) numunelerinin yogunluk ve SL iliskisi Sekil 1'de gösterilmistir. Iki parametre arasindaki güçlü korelasyon (Ft2 : 0,9958) görülmektedir. SL orani ve dielektrik sabiti arasindaki iliski dogrudan orantiIidir, ancak nispeten baskilanmistir; SL oranindaki %30 varyasyonun etkisi, yalnizca dielektrik sabitinde oldugu düsünülen, %60 SL oranindaki tgö, artan bir deger gösterir. Özetlemek gerekirse, bu çalismada açiklanan dielektrik dereceIendirmenin arkasindaki ana fikir, kompozitin tekIi katmanlarini belirli bir SL oraniyla hazirlayarak gerçeklestirilir. Tablo 1: SCFS SL Orani, Yogunluk, Dielektrik Sabit ve Kayip SL Orani Yêggglgk a tgö oksit seramiklerden hazirlanabilir. Malzeme özelliklerini daha iyi optimize etmek için bunlarin ve diger metal oksitlerin bilesenleri farkli oranlarda karistirarak iki" veya üçIü biIesimIeri hazirlanabilir. Seramik tozun safligi, parçacik boyut ve dagilimi, beIirIi yüzey alani ve morfolojisi dogrudan kompozitin sinterIenme davranisini ve dieIektrik tepkisini etkileyen kritik faktörlerdir. Çamurun SL orani, belirli bir aralikta seçiImeIidir; ne asiri derecede zayif bir parçaciklar arasi baga yol açacak kadar düsük oImaIi ne de segregasyona sebep olacak kadar yüksek olmalidir. Genellikle uygun katki maddeleri ile birlikte agirlikça %10 ile %90 çalismalidir, ancak %30 ile %80 bahsedilen seramik sistemleri için daha güvenli bir araliktir. Dielektrik siniflandirma için baslangiç noktasi, farkli SL oranlarina sahip çamurlarin hazirlanmasidir. Kompozit yapilar, seramik elyaf aglar (kumaslar) veya sürekli seramik elyaf demetIeri kullanilarak imal ediIebiIir. DüzIemseI kompozitIer için, istenen dieIektrik sabit degerine sahip çamur iIe emprenye ediIen seramik kumaslar, islak halde birlikte istiernir, presIenir, kurutqur ve yakiIir. Alternatif olarak, seramik eIyafIardan olusan demetIer, belirli bir dieIektrik sabite sahip çamur banyosuna daldiriIir, kurutqur, silindirik yapidaki bir kalibin etrafina sarilir, kaliptan çikarilir ve ateslenir. Arzu ediIen RF tasarimina göre çok farkli çamurIa (belirli SL oraniyla) kumaslarin istiernmesi veya eIyafIarin sarilmasi isIemi tekrarlanabilir. Burada bahsedilen çamur malzemesinin yalnizca tek bir malzemeden (silika veya alümina gibi) olustugunu ve bu tek malzemenin dieIektrik sabitinin, kompozitin her bir katmaninda SL oranini degistirerek ayarlandigini yeniden belirtmek önemlidir. Bu teknikle bir O/O CMC yapisinin dieIektrik dereceIendiriImesi, benzer olmayan malzemelere sahip sandviç yapilara kiyasla gelismis bir genis bant özelligi saglar. Sekil 2, 3 siIika numunesinin araya girme kaybi (s21) parametresinin simüIasyonunu göstermektedir: Ilk numune %90 bagil yogunluga sahip siIikadir, ikincisi ise düsük dielektrik sabitine sahip olan silikadan ve yüksek dielektrik sabitine sahip baska bir silikadan olusan A-tipi bir sandviç malzemedir (3 kat silika). Bu tasarim için siIikanin kalinligi, yüksek dielektrik sabitli yüzey tabakanin yaklasik 5 katidir. Üçüncü tasarim, her birinin yogunlugu yaklasik %10 oraninda degisen, esdeger kalinlikta 4 silika tabakasindan olusur. Bu 3 yapi için yansima kaybi 0,50 - 40 GHz arasinda simüle edilir. Sekil 2'de açikça görüldügü gibi, derecelendirilmis silika, tüm frekans spektrumunda 1 dB'den daha az bir kayip gösterirken, sandviç ve islenmemis numuneler belirli frekans araliginda 1 dB'nin üzerinde kayiplar sergilemektedir. TR TR TR TR TR
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CN202180080519.3A CN116529224A (zh) | 2020-12-23 | 2021-12-20 | 通过组合物分级制造rf透明陶瓷复合材料结构 |
EP21911736.3A EP4259427A1 (en) | 2020-12-23 | 2021-12-20 | Fabrication of rf-transparent ceramic composite structures by compositional grading |
PCT/TR2021/051435 WO2022139757A1 (en) | 2020-12-23 | 2021-12-20 | Fabrication of rf-transparent ceramic composite structures by compositional grading |
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