TR200102696T2 - Geliştirilmiş entegre osilatörler ve ayar devreleri. - Google Patents

Geliştirilmiş entegre osilatörler ve ayar devreleri.

Info

Publication number
TR200102696T2
TR200102696T2 TR2001/02696T TR200102696T TR200102696T2 TR 200102696 T2 TR200102696 T2 TR 200102696T2 TR 2001/02696 T TR2001/02696 T TR 2001/02696T TR 200102696 T TR200102696 T TR 200102696T TR 200102696 T2 TR200102696 T2 TR 200102696T2
Authority
TR
Turkey
Prior art keywords
vco
components
tuning circuits
improved integrated
fixed capacitors
Prior art date
Application number
TR2001/02696T
Other languages
English (en)
Turkish (tr)
Inventor
T.M. Van Zeijl Paul
Original Assignee
Telefonaktiebolaget Lm Ericsson (Publ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget Lm Ericsson (Publ) filed Critical Telefonaktiebolaget Lm Ericsson (Publ)
Publication of TR200102696T2 publication Critical patent/TR200102696T2/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TR2001/02696T 1999-03-19 2000-03-13 Geliştirilmiş entegre osilatörler ve ayar devreleri. TR200102696T2 (tr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12524599P 1999-03-19 1999-03-19
US09/434,166 US6268779B1 (en) 1999-03-19 1999-11-04 Integrated oscillators and tuning circuits

Publications (1)

Publication Number Publication Date
TR200102696T2 true TR200102696T2 (tr) 2002-04-22

Family

ID=26823402

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2001/02696T TR200102696T2 (tr) 1999-03-19 2000-03-13 Geliştirilmiş entegre osilatörler ve ayar devreleri.

Country Status (8)

Country Link
US (1) US6268779B1 (enExample)
EP (1) EP1183730A2 (enExample)
JP (1) JP4509390B2 (enExample)
CN (1) CN1218395C (enExample)
AU (1) AU3991200A (enExample)
MY (1) MY122686A (enExample)
TR (1) TR200102696T2 (enExample)
WO (1) WO2000057454A2 (enExample)

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US6566971B1 (en) * 2000-02-24 2003-05-20 Broadcom Corporation Method and circuitry for implementing a differentially tuned varactor-inductor oscillator
US6747307B1 (en) * 2000-04-04 2004-06-08 Koninklijke Philips Electronics N.V. Combined transistor-capacitor structure in deep sub-micron CMOS for power amplifiers
US6504443B1 (en) * 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US7214593B2 (en) * 2001-02-01 2007-05-08 International Business Machines Corporation Passivation for improved bipolar yield
JP5000055B2 (ja) * 2001-09-19 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置
US6541814B1 (en) 2001-11-06 2003-04-01 Pericom Semiconductor Corp. MOS variable capacitor with controlled dC/dV and voltage drop across W of gate
US7126206B2 (en) * 2004-12-30 2006-10-24 Silicon Labs Cp, Inc. Distributed capacitor array
US7323948B2 (en) * 2005-08-23 2008-01-29 International Business Machines Corporation Vertical LC tank device
EP1952445A1 (en) * 2005-11-24 2008-08-06 Technische Universiteit Delft Varactor element and low distortion varactor circuit arrangement
US7511346B2 (en) * 2005-12-27 2009-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Design of high-frequency substrate noise isolation in BiCMOS technology
US7518850B2 (en) 2006-05-18 2009-04-14 International Business Machines Corporation High yield, high density on-chip capacitor design
US20090184749A1 (en) * 2008-01-17 2009-07-23 Realtek Semiconductor Corporation High-resolution digitally controlled tuning circuit elements
US8809155B2 (en) 2012-10-04 2014-08-19 International Business Machines Corporation Back-end-of-line metal-oxide-semiconductor varactors
KR102345675B1 (ko) * 2015-07-13 2021-12-31 에스케이하이닉스 주식회사 스위치드-커패시터 디시-디시 컨버터 및 그 제조방법

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US4458215A (en) 1981-08-17 1984-07-03 Rca Corporation Monolithic voltage controlled oscillator
JPS58107703A (ja) 1981-12-21 1983-06-27 Matsushita Electric Ind Co Ltd 電圧制御発振器
US4855801A (en) * 1986-08-22 1989-08-08 Siemens Aktiengesellschaft Transistor varactor for dynamics semiconductor storage means
US4703286A (en) 1986-11-26 1987-10-27 Rca Corporation Dual gate tunable oscillator
JPH01293673A (ja) * 1988-05-23 1989-11-27 Iwasaki Electric Co Ltd 発光ダイオード
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US4969032A (en) 1988-07-18 1990-11-06 Motorola Inc. Monolithic microwave integrated circuit having vertically stacked components
JPH0354903A (ja) 1989-03-31 1991-03-08 Kyocera Corp 発振回路
US5175884A (en) 1990-06-01 1992-12-29 Motorola, Inc. Voltage controlled oscillator with current control
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JPH07273545A (ja) 1994-03-31 1995-10-20 Murata Mfg Co Ltd 電圧制御形発振器
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JPH1141030A (ja) * 1997-07-15 1999-02-12 Hitachi Denshi Ltd 電圧制御発振器
US5946567A (en) 1998-03-20 1999-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making metal capacitors for deep submicrometer processes for semiconductor integrated circuits

Also Published As

Publication number Publication date
EP1183730A2 (en) 2002-03-06
JP2002540597A (ja) 2002-11-26
WO2000057454A3 (en) 2001-01-18
WO2000057454A2 (en) 2000-09-28
AU3991200A (en) 2000-10-09
MY122686A (en) 2006-04-29
CN1344426A (zh) 2002-04-10
JP4509390B2 (ja) 2010-07-21
US6268779B1 (en) 2001-07-31
CN1218395C (zh) 2005-09-07

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