TH73580A - How the process is performed with laser light and semiconductor chips. - Google Patents

Abstract

The DC60 (11/02/54) provides a method for performing laser processing. Which although substrates formed by the laminate part Which includes a number of functional devices to be thick Substrates and laminates can also be cut with high precision. The laser process method is to impregnate the substrate 4 with laser L, while the end surface 21 is applied as the light entry surface. Sir and addressing the light convergence point P is inside substrate 4 in order to form a modification area 71, 72, 73 within substrate 4. Here, the modified area 71 is formed. Where the distance between the anterior surface 3 of the substrate 4 and the tip of the The quality modification area 71 on the front surface is 5 μm to 15 μm, when the quality modification area 71 is molded at that position, the laminate 16 (here is made up of an insulating film between layers 17a, 17b) where Forming on the front surface 3 of the substrate 4 is cut along the cutting line. With high precision with substrate 4 as well, provide a way to make it through laser processing. Which although substrates formed with laminate sections, which include A number of functional devices will be thick. Can cut substrates and laminate sections with high precision This laser processing method is treated with substrate 4 with laser L, while the end surface 21 is used as the laser entrance surface and the address of the light point P is within the substrate 4 so that Will rise The image of the modified area 71, 72, 73 is inside substrate 4. Here, the modified area 71 is molded at where the distance between the front surface 3 of substrate 4 and the tip of the area. Modified quality 71 on the front surface is 5 μm to 15 μm, when the transposition 71 is molded at that location, the laminate 16 (here is made up of an insulating film between layers 17a, 17b) is formed. The figure on the front surface 3 of the substrate 4 is also cut along the line to cut. High precision with substrate 4 as well

Claims (1)

1. The method of applying laser treatment is by substrating with a laminated front surface, including a number of functional devices with a laser beam while addressing the convergence point. Within the substrate in order to form the modified area to become the starting point for cutting within the substrate. Along the line to cut the substrate Method consisting of steps of: Forming one modified area along a line to cut at a location where the distance between the faces The front and upper end faces are 5 μm to 15 μm, and machining, at least one second modified bit along the line to cut at the position between The first modification area and the front end of the substrate. 2. How to make it through laser treatment by substrate bathing with the pre-formed front surface. Laminate which combines Both a number of functional devices with a laser beam while addressing the convergence point. Within the substrate in order to form the modified area to become the starting point for cutting within the substrate. Along the line to cut the substrate Method which consists of the process of forming a modified area along a line to cut at a location where The distance between the front surface and the tip on the front surface is 5 μm to 15 μm. 3. Laser processing method according to claim 1 or 2, where the first modified area is formed. It is located at a location where the distance between the front surface and the upper end surface is 5 μm to 10 μm. 4. The method of laser treatment is by substrate with a pre-formed front surface. Laminate, which includes a number of functional devices with a laser beam while addressing the light convergence point Within the substrate in order to form the modified area to become the starting point for cutting within the substrate. Along the line to cut the substrate Method consisting of steps of: Forming one modified area along a line to cut at a location where the distance between the faces The front and the tip on the end face is [(Substrate thickness) x 0.1] μm to [20+ (substrate thickness) x 0.1] μm and forming at least one second modification zone along the line to cut at position. between The first modification area and the end surface of the substrate 5. How to make it through laser treatment by applying a substrate with a laminated front surface, including a number of optical functional devices. Laser while addressing the light convergence point Within the substrate in order to form the modified area to become the starting point for cutting within the substrate. Along the line to cut the substrate Method, which consists of the process of forming one modified area along a line to cut at a location where The distance between the fore face and the tip on the end face is [(Substrate thickness) x 0.1] μm [20 + (substrate thickness) x 0.1] μm 6. Laser processing method according to claim 4 or 5, where the first modified area will Was formed Is where the distance between the front surface of the substrate and the tip of the modified area at One on the end surface is [5 + (substrate thickness) x 0.1] μm to [20+ (substrate thickness) x 0.1] μm. 7. Laser processing method according to claim 6. Where the first modified area is formed at Location where the distance between the anterior surface of the substrate and the tip of the upper first modified region The end surface is [5 + (substrate thickness) x 0.1] μm to [10 + (substrate thickness) x 0.1] μm. 8. Laser processing method according to claim 1 to 7 any one Where the substrate is Semiconductor substrate And where the first and second modification areas include the molten treated area 9. Laser processing method according to one of claims 1 to 8. Where the first modified area And the second is being molded in succession sequentially from the side that is further away from the end surface while applying the surface The end is the entrance surface of the laser light 1 0. How to make it through laser treatment according to claim 1 to 9, any one Where the laser has a power of 2 μJ to 50 μJ when forming the first modification area 1 1. Method of processing the laser according to one of claims 1 to 10. Where the laser has a power of 1 μJ to 50 μJ when forming the second modification area 1 2. Laser processing method according to claims 1 to 11. Where to set the point address The laser beam converts at a distance of 50 μm to [(substrate thickness) x0.9] μm from the end surface when forming the second modification area. 1 3. Laser processing method. According to any 1 to 11 claim Where to set the point address The laser beam converges at a distance of 20 μm to 110 μm from the end surface. When forming the second modification area 1 4. How to make it through laser treatment according to claims 1 to 13, any one Which is no longer assembled This is done by cutting the substrate and the laminate along the line to cut 1 5. A semiconductor chip, which contains a substrate. And the laminate section placed on the front surface of the substrate, including functional devices Where the first modified area extending along the end surface of the substrate is molded in position. Where the distance between the anterior surface and the upper front surface is 5 μm to 15 μm in the substrate's lateral surface and where at least one second modified row extends along the stern surface. Will be formed at Location between the first modified area and the stern surface in the lateral anterior surface of the substrate 1 6. A semiconductor chip consisting of a substrate. And the laminate that is placed on the surface Substrate page Including functional equipment Where the first modified area extending along the end surface of the substrate is molded in position. Where the distance between the anterior surface and the upper end surface is 5 μm to 15 μm in the lateral surface of the substrate 1 7. A semiconductor chip which consists of a substrate. And the laminate that is placed on the surface Substrate page Including functional equipment Where the first modified area extending along the end surface of the substrate is molded in position. Which is the distance between the front face and the tip on the end face [(Substrate thickness) x 0.1] μm to [20 + (substrate thickness) x 0.1] μm. In the substrate's lateral surface and where at least one second row of modified areas extending along the end surface is formed at Location between the first modified area and the stern surface in the lateral anterior surface of the substrate 1 8. A semiconductor chip consisting of a substrate. And the laminate section placed on the front surface of the substrate, including functional devices Where the first modified area extending along the end surface of the substrate is molded in position. In which the distance between the front face and the tip on the end face is [(Substrate thickness) x 0.1] micrometers to [20 + (substrate thickness) x 0.1] micrometers in the substrate side surface 1 9. semiconductor chip according to claim 17. Or 18 where the first modification area will be formed at Position at which the distance between the anterior surface of the substrate and the tip of the upper first modified region The end face is [5 + (substrate thickness) x 0.1] μm to [20 + (substrate thickness) x 0.1] μm 2 0. The semiconductor chip according to claim 15 to 19. Any one Where the substrate is the semiconductor substrate and where the first and second modification regions include the melting zone 2. 1. A semiconductor chip in accordance with any of the 15 to 20 claims. Where the distance between the ends Of the first modification area on the stern and the end of the second modification area on the stern side The opposite faces are 0 μm to [(substrate thickness) - (substrate thickness) x 0.6] μm.