JP2003010991A5 - - Google Patents
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- JP2003010991A5 JP2003010991A5 JP2002097725A JP2002097725A JP2003010991A5 JP 2003010991 A5 JP2003010991 A5 JP 2003010991A5 JP 2002097725 A JP2002097725 A JP 2002097725A JP 2002097725 A JP2002097725 A JP 2002097725A JP 2003010991 A5 JP2003010991 A5 JP 2003010991A5
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- JP
- Japan
- Prior art keywords
- region
- processing method
- laser processing
- modified
- cutting
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【特許請求の範囲】
【請求項１】 ウェハ状の加工対象物の内部に集光点を合わせてレーザ光を照射することで、前記加工対象物の厚さ方向と略直交する断面において前記加工対象物の切断予定ラインに沿った方向の長さが最大の長さとなる改質スポットを前記切断予定ラインに沿って前記加工対象物の内部に複数形成し、複数の前記改質スポットによって、切断の起点となる改質領域を形成することを特徴とするレーザ加工方法。
【請求項２】 前記改質領域を切断の起点として前記加工対象物を前記切断予定ラインに沿って切断することを特徴とする請求項１記載のレーザ加工方法。
【請求項３】 前記改質領域は溶融処理領域であることを特徴とする請求項１又は２記載のレーザ加工方法。
【請求項４】 前記改質領域はクラック領域であることを特徴とする請求項１又は２記載のレーザ加工方法。
【請求項５】 前記改質領域は屈折率変化領域であることを特徴とする請求項１又は２記載のレーザ加工方法。
【請求項６】 前記加工対象物は半導体材料基板であることを特徴とする請求項１又は２記載のレーザ加工方法。
【請求項７】 前記加工対象物はガラス基板であることを特徴とする請求項１又は２記載のレーザ加工方法。
【請求項８】 前記加工対象物は圧電材料基板であることを特徴とする請求項１又は２記載のレーザ加工方法。
【請求項９】 前記改質領域は、単結晶構造から非晶質構造に変化した領域、単結晶構造から多結晶構造に変化した領域、又は単結晶構造から非晶質構造及び多結晶構造を含む構造に変化した領域である溶融処理領域であることを特徴とする請求項６記載のレーザ加工方法。
[Claims]
(1) Wafer-shapedIrradiate laser light with focusing point inside processing objectBy doing so, in a cross section substantially orthogonal to the thickness direction of the workpieceAlong the line to cut the workpieceWasA modified spot with the maximum length in the directionAlong the cutting line, inside the processing objectMultiple formationAnd a starting point of cutting by the plurality of modified spots.Form a reformed areaCharacterized byLaser processing method.
(2) 2. The laser processing method according to claim 1, wherein the object to be processed is cut along the cut line using the modified region as a starting point of cutting. 3.
(3) The laser processing method according to claim 1, wherein the modified region is a melt processing region.
(4) The laser processing method according to claim 1, wherein the modified region is a crack region.
(5) The laser processing method according to claim 1, wherein the modified region is a refractive index change region.
6. 3. The laser processing method according to claim 1, wherein the object to be processed is a semiconductor material substrate.
7. The laser processing method according to claim 1, wherein the processing target is a glass substrate.
8. The laser processing method according to claim 1, wherein the object to be processed is a piezoelectric material substrate.
9. The modified region has been changed from a single crystal structure to an amorphous structure, a region changed from a single crystal structure to a polycrystalline structure, or changed from a single crystal structure to a structure including an amorphous structure and a polycrystalline structure. 7. The laser processing method according to claim 6, wherein the region is a melt processing region.
【０００６】
【課題を解決するための手段】
本発明に係るレーザ加工方法は、ウェハ状の加工対象物の内部に集光点を合わせてレーザ光を照射することで、加工対象物の厚さ方向と略直交する断面において加工対象物の切断予定ラインに沿った方向の長さが最大の長さとなる改質スポットを切断予定ラインに沿って加工対象物の内部に複数形成し、複数の改質スポットによって、切断の起点となる改質領域を形成することを特徴とする。
[0006]
[Means for Solving the Problems]
The laser processing method according to the present invention is directed to cutting a processing object in a cross section substantially orthogonal to a thickness direction of the processing object by irradiating a laser beam with a converging point inside a wafer-shaped processing object. A plurality of modified spots having a maximum length in the direction along the planned line are formed inside the object to be processed along the planned cut line, and the modified region serving as a starting point of cutting is formed by the plurality of modified spots. and forming a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002097725A JP3867003B2 (en) | 2000-09-13 | 2002-03-29 | Laser processing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000278306 | 2000-09-13 | ||
| JP2000-278306 | 2000-09-13 | ||
| JP2002097725A JP3867003B2 (en) | 2000-09-13 | 2002-03-29 | Laser processing method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001278752A Division JP3722731B2 (en) | 2000-09-13 | 2001-09-13 | Laser processing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006055538A Division JP2006205259A (en) | 2000-09-13 | 2006-03-01 | Method for laser beam machining |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003010991A JP2003010991A (en) | 2003-01-15 |
| JP2003010991A5 true JP2003010991A5 (en) | 2006-04-13 |
| JP3867003B2 JP3867003B2 (en) | 2007-01-10 |
Family
ID=26599900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002097725A Expired - Lifetime JP3867003B2 (en) | 2000-09-13 | 2002-03-29 | Laser processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3867003B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8168514B2 (en) * | 2006-08-24 | 2012-05-01 | Corning Incorporated | Laser separation of thin laminated glass substrates for flexible display applications |
| JP5670647B2 (en) * | 2010-05-14 | 2015-02-18 | 浜松ホトニクス株式会社 | Processing object cutting method |
| US8950217B2 (en) | 2010-05-14 | 2015-02-10 | Hamamatsu Photonics K.K. | Method of cutting object to be processed, method of cutting strengthened glass sheet and method of manufacturing strengthened glass member |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
-
2002
- 2002-03-29 JP JP2002097725A patent/JP3867003B2/en not_active Expired - Lifetime
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