SU928376A1

SU928376A1 - Device for simulating bipolar transistor

Info

Publication number: SU928376A1
Application number: SU802900875A
Authority: SU
Inventors: Марат Садыкович Валитов; Борис Алексеевич Волков; Игорь Абрамович Зельцер; Ирина Ивановна Пестрякова
Original assignee: Московский Институт Радиотехники,Электроники И Автоматики
Priority date: 1980-03-28
Filing date: 1980-03-28
Publication date: 1982-05-15

Description

(54) УСТРОЙСТВО ДЛЯ МОПЕЛИРОВАНИЯ БИПОЛЯРНОГО ТРАНЗИСТОРА(54) DEVICE FOR MOBILE OF BIPOLAR TRANSISTOR

Изобретение относитс к радиоэлектронике , а именно к исследовани м и измерени м параметров транзисторов, и может быть использовано дл анализа поведени радиоэлектронных устройств в услови х воздействи различного рода облучени ; нейтронного, j -излучени , d,излучени , протонного.The invention relates to radio electronics, namely to the research and measurement of parameters of transistors, and can be used to analyze the behavior of radio electronic devices under the conditions of exposure to various types of irradiation; neutron, j-radiation, d, radiation, proton.

Известно устройство дл моделировани полупроводникового элемента, содержащее операционные усилители, переменный резистор и транзистор. Данное устройство позвол ет моделировать изменение коэффициента передачи по току транзистора til .A device for simulating a semiconductor element is known, which contains operational amplifiers, a variable resistor and a transistor. This device allows you to simulate a change in the current transfer ratio of the transistor til.

Недостатки этого устройства заключаютс в том, что точность моделировани определ етс точностью совпадени парноподобных транзисторов. Кроме того, невозможно одновременно изменить входное сопротивление и коэффициент передачи по току, что не позвол ет моделировать поведение транзистора в услови х нейтронного облучени .The disadvantages of this device are that the accuracy of the simulation is determined by the coincidence accuracy of the pair-like transistors. In addition, it is impossible to simultaneously change the input resistance and current transfer coefficient, which does not allow to simulate the behavior of the transistor under neutron irradiation conditions.

Наиболее близкой по технической сущности к предлагаемому вл етс модель , бипол рного транзистора, содержаща транзистор и операционный усилитель, в эмиттерную цепь транзистора, который соединен через резистор с инвертируют шим входом операционного усилител , введен эталонный резистор, св занный с неинвертирующим входом операционного усилител , выход которого соединен с The closest in technical essence to the present invention is a model of a bipolar transistor containing a transistor and an operational amplifier, into the emitter circuit of the transistor, which is connected through a resistor to the inverter's inverted input, is connected to a non-inverting input of the operational amplifier, output which is connected to

10 усилителем мощности, св занным с базовой цепью входного транзистора 2 .10 by a power amplifier connected to the base circuit of the input transistor 2.

Недостатком данного устройства вл етс сложность схемы и наличие внещних источников питани .The disadvantage of this device is the complexity of the circuit and the presence of external power sources.

1515

Цель изобретени - упрощение.The purpose of the invention is simplification.

Поставленна цель достигаетс тем, что в устройство дл моделировани би-. пол рного транз1й;тора, содержащее первый транзистор и переменный резистор This goal is achieved by the fact that in the device for modeling bi-. polar transistor; torus containing the first transistor and a variable resistor

Claims

20 a second tr & resistor is inserted, the terminals of the variable resistor are connected to the bases of both transistors, respectively, the emitters of the transistors are combined 39 and are the emitter input of the device, the base of the first transistor is connected to the collector of the second transistor and the collector of the first transistor is the collector input of the device. The drawing shows a diagram of a device for simulating a bipolar transistor. The device consists of a first transistor 1, in the base circuit of which a variable resistor 2 is included, which is simultaneously connected to the base circuit of the second transistor 3, transis emitters. 1 and 3 are combined and are the emitter jack of the device (E), the base of transistor 1 is connected to the collector of transistor 3 and is the base input of the device (B), the collector of transistor 1 is the collector input of the device (K). The device works as follows. To quickly study the behavior of electronic devices under special conditions, it is sufficient to change the amplifying properties of the transistor from nominal to minimum values, which corresponds to different doses of radiation. The input current of device 36f is the sum of three Ots currents, (bif, the Gap collector-emitter of transistor 3 represents a current generator, the value of which is saiBHCHTb from 3, and therefore, from the resistance value of resistor 2. Thus, when current is applied to the base input The magnitude of the collector current Jj of transistor 1 will also depend on the magnitude of the resistance of resistor 2. The ratio J | / k E is the device's current-gain factor B. At resistance 6 of resistor 2, the current 31 and 3r tends to zero, hence , 3 (j, and B are equal to the current gain of transistor 1. When / resistor 2 decreases, the base current of transistor 1 compared to the input current of the device decreases, and therefore decreases, 3 c, which is equivalent to the reduction of B from the external terminals of the device. external additional power sources, ease of manufacture and operation. Serial transistors can be used to create the model. The formula is shown in Fig. 2. A device for simulating a bipolar transistor containing a first transistor and a variable resistor, is deprived of the fact that, for the sake of simplicity, a second transistor is inserted in it, while the terminals of the variable resistor are connected to the bases of both transistors, respectively, emitters The transistors are connected and are emitter emitters. the input of the device, the base of the first transistor is connected to the collector of the second transistor and is the basic input of the device, and the collector of the first transistor is the collector input of the device. Sources of information taken into account during the examination 1. USSR author's certificate No. 631944, cl. Q06Q 7/62, 1977.

2. USSR author's certificate in accordance with application number 2822923/27, cl, H O1 U 29 / 7O, 1979,