SU773027A1 - Ceramic material - Google Patents

Description

(54) CERAMIC MATERIAL

one

The invention relates to ceramic materials for electronic equipment, which can be used for trimming capacitors, resistor bases operating at 300 ° C, and other electronic products that require increased thermal conductivity and a linear expansion coefficient (85-95) -U-.

Known ceramic material 1, containing, wt.%;

Magnesium Oxide .31-53.5

Aluminum oxide OY7,7 - 54

Silicon dioxide 9.7 - 40.6

Barium Oxide 0 - 30

The closest solution to the proposed invention is a ceramic material 2, comprising, in wt.%:

Oxide - 98

Aluminum oxide 0.02 - 0.25

Silicon dioxide 1.0 - 3.5

Add-on 0.05 - 5

Odiaco these materials have insufficient physical and dielectric characteristics.

The purpose of the invention is to obtain a homogeneous, fine-crystalline structure of ceramics with high physical and dielectric characteristics.

This is achieved by a certain ratio of comonnsons, leading to a high content of periclase phase in ceramics, wt.%: Magnesium oxide 70 - 80

Aluminum oxide 10 - 20

Silicon Dioxide Else

ten

The proposed material is obtained in the following way.

These components are mixed for less than 2 hours, calcined at 1250-1300 ° C with 2 hours. Grinding obo: 1kzhnogo spec

15 is produced in a vibratory mill with a dry method to a particle size of 15-20 microns and further with a wet method to a basic particle size of 3 microns.

The products are manufactured by pressing, hot-casting under pressure and flowing through an organic plasticizer.

The proposed .a material based on joint crisgallisation of periclase, spinel and form1 has a higher physical

and dielectric characteristics as compared with those currently used both in domestic and in foreign technology.

Example 1. The composition of the ceramic material,%:

MDO70

AljOj10

SiO, 20 P. M and p 2. Composition of ceramic material, 25%. MDO75 AVzOz12,5 SiOj12,5 Ceramic firing temperature 1600 + 20С. Example 3. Composition of ceramic material,%: MDO80 A jOa10 SiO210 The sintering temperature of the material is 1600 ± 20 C. The ceramic structure is uniform with mutually distributed periclase, spinel and forsterite,%:

The firing temperature of ceramics is 1600-1620 ° C. The structure of ceramics with uniformly distributed phases of periclase, itineli and forsterite. The porosity of the material is 3-4%. Pore size 5 microns or less.

The electrical characteristics of ceramics are given in table. one.

Table 1

Table 2 The structure of ceramics with uniform fine crystallization of the three phases - periclase, spinach, ha, and forsterite. The porosity of the material is 4-5%. The electrical characteristics of ceramics are given in table. 2. Spinel Forsterite Material porosity 4%. Pore size um and less. The electrical characteristics of ceramics are shown in Table. 3

LMG-1460 - 1600 kg / cm

The proposed ceramic material is sintered at 1600 + 20 ° C in an oxidizing environment. The porosity of ceramics is 4-5%.

The crystallization is shallow, which creates a homogeneous micro-relief of the material.

Claims (2)

1. The UK patent number 955979, cl. From 1 J, pub. 1970. 2. The UK patent number 1493238, cl. From 04 to 35/04, published in 1977.