SU739649A1 - Magnetic memory member - Google Patents

Description

This invention relates to the field of mag nnt digital memory. A device for non-destructive reading of information is known, comprising; selector (CC) and wacky (ES cores, combined by resistive video communication, read bus, all-flush and output bus in JCO.TODOM, the selector core of the displacement probe and read-through bus I.) and the duration of the bus is counted in the direction opposite to the displacement created by the direct current flowing through the displacement winding. The principle of operation of this device is based on the fact that when there is a pull of O in the CC, overlaid by the wired connection, The effect of the current reading pulse varies little. The drawback of the device is the hard two-sided limitation on the amplitude and duration of the counting current pulse, which is necessary for the operation of the invention. The closest in essence to the invention is the device where the cycle the access to the memory element is carried out in three cycles: reading, writing, recording 2. In the reading cycle, a current pulse is applied to the numeric bus according to the stitching of both cores core to a state of negative residual magnetization. At the same time, the output signal corresponding to the recorded format is induced in the exit of the Shin. E, passing through the ES. To record O in the second cycle, simultaneously with a read pulse, a discharge current pulse exceeding the amplitude of the pulse is applied to the discharge spike passing through the SS; readout current, which switches the CC to the positive state of the residual magnetization, while the numerical current. The reading keeps the CS in a state of negative residual magnetization. To write I into the discharge bus in the third cycle (at the end of the read pulse), the discharge current is supplied, which switches the SS into a positive residual magnetization state, and the current induced at the same time in the negative communication circuit is reversible as and an irreversible change in the flow of SS, transforms the CS into a state of positive residual magnetization. Record in the ES tachsoy is performed by prohibiting the alternating magnetization of the ES by the discharge current. The disadvantage of the device is the destruction of information when reading. In order to increase the speed of aa and the commanding element, an additional read bus was inserted into it, stitching the ES according to the numeric bus. FIG. 1 is the schematic diagram of the proposed device; Fig 2 is a time chart of his work. Contains CC1 CWS 2, covered by a resistive coil of communication 3, numerical bus-recorder 4, according to stitching CC and AP, equal to 1 shsh 5, stitching CC counter-numeric and Record, output bus 6 passing through ES, and additional bus g read 7, mined AP is consistent with the numeric write bus. When storing information, the SS is in a state of positive residual magnetization, and CS is in a state of positive residual magnetization: when storing code 1 and in the state of denial of residual magnetization when stored in code O. The code is recorded in two cycles. In the first cycle (3 m) on the write bus 4 (W-j,, Fig. 2a), a current pulse () i is delivered which translates both cores into a state of negative residual magnetization. In the second cycle (t), a pulse of an additional write current (Zp) is applied to the bit bus 5 (Fr), which switches the SS to a state of positive residual magnetization, and the induced current in connection circuit 3 transfers the ES to positive residual magnetization. To write the code O to the numeric write bus 4 (VUSrt), FIG. 26), and the discharge bus pulses tlan and o p are simultaneously applied to the discharge bus 5 (SR). A pulse of discharge current Pp, which exceeds the recording current in amplitude, keeps the CC at a positive residual magnetization, and the current pulse is written; CS is in a state of negative residual magnetization. Non-destructive reading of information is performed in two cycles. In step 1 (b), a read current pulse () is fed to the readout number bus 7 (iu (hr, fs. 2a, 26)), which, depending on the information stored in the device or sub-T1, causes the CS state to be negative residual magnetization, or switches it into this state. When switching the ES due to irreversible flow change, and also due to reversible flow change along the flat part of the hysteresis loop, connection 3 is induced in the turn of connection, which alternates in a full SS cycle. The output bus 6 (Vgyj) is induced to signal 1. In the second Act (CJ also restores to bus 5 a current pulse recovered & lg 3g, which when reading the code O confirms in the SS a state of positive residual magnetization, and when reading code 1 it switches it to this state. At the same time induced by reversible and of irreversible changes in the SS in the current, the current in the turn of the connection 3 returns the ES to its initial state. The invention should be used in semi-permanent memory in an electrical transducer. In the prototype, the recovery of the read information can be carried out by regeneration in three cycles: read, write, and write. In the proposed storage element, non-destructive reading is carried out in two cycles: reading and recovery, which makes it possible to increase the speed at 1. readout. Claims of the invention Magnetic storage element containing a selection and storage cores, combined by a resistive connection, a head write bus and a discharge bus, a selection and memory cores are flushed by a number write bus according to, the selector core is a front bus line of a number bus, the word bus is divided by a number bus, according to the selection bus, the selector core is a slot bus, the selector core is used. due to the fact that, in order to increase the speed, it provides an additional bus, readout, and the memory core is flashed with an additional bus, which corresponds to the numerical th bus write.

57396496

Information sources. Sat Storing information in cyberspaces is taken into account during exertizetic conditions. Ed. L. P., Г11 ° Т1 ЛГ74 .. °°°°

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Claims (1)

Claim A magnetic storage element comprising a selection and memory cores combined by a resistive coupling, a numerical write bus and a bit line, a select and memory cores are "numbered by the numerical write bus according to the select core is stitched with a bit line opposite the numerical write bus, characterized in that in order to increase performance, it contains an additional bus. read, and the storage core is flashed with an additional read bus "" "^ according to the numerical write bus.