SU723681A1 - Shaper of pulses of storage elements selection - Google Patents

Description

The invention relates to computing technology and can be used in storage devices.

Addressable pulse shapers of the sample memory element® are known [1] - [h].

In each of them, a positive voltage pulse is generated at the output, which allows you to select the required memory element in the drive matrix.

However, the known devices have low reliability.

The aim of the invention is to increase the reliability of the shaper without increasing the power consumption.

This is achieved by introducing the device. an additional pnp transistor, the base of which is connected to the collector and the pn transistor, an emitter to the sampling bus, a collector to the pnp base of the transistor, and the pnp base of the transistor connected to the input bus.

The pulse generator of a sample of memory elements contains a transistor 1, a pnp transistor 2, resistors 3,4, and

5, a memory element sampling bus 6, a sampling current generator 7, a power source 8, bias diodes 9 connected in series; additional pnp transistor 10.

In standby mode, the current of the current generator of sample 7 is zero. Suppose that the transistor 2 is open, and the transistor 10 is closed. Then, due to the collector current of the transistor 2, due to the current of the sampling bus 6 1 _w6 , a voltage drop is created on the resistor 5 and the base-emitter voltage of the additional _pnp transistor 10 is less than the base-emitter voltage of the transistor 2. Since the transistor 10 is closed, then rpn transistor 1 is also closed. The potential of the sampling bus 6 is defined as where E ^ is the voltage of the power supply 8;

2i _d - voltage drop across the bias diodes 9;

0 _BE2 - voltage drop at the base-emitter junction of the open transistor 2;

T _BE - base current of the Transistor 2;

- resistance of the resistor 4. 5

At the sample time, the sample current generator 7 is turned on and its current lowers the base potential of transistor 2. The transistor 10 and transistor 1 are turned on. While the sample current generator 7 is on, the collector current of transistor 1 is not enough to increase the base potential of transistor 2, so it remains closed .

In this state, the potential slime sample memory elements 6 defined ^'5 both n ^{· = F -II -1 .R ν ωβ} · η Wei'"5 5 _'B9 ^and where w'

- voltage drop across the transition baEa-emitter of the open transistor 10;

- base current of the transistor 10;

- resistance

And it’s fretted—

those. about 25 ra 5.

⁴ > and ° seam seam, an increase in the potential of the sample bus 6 has occurred.

After the sample current generator 7 turns off, the base potential of transistor 2 will increase. Since p - η-p of transistor 1 is more inertial, than η —p — and transistors 2 and 10, then its collector current provides an increase in the base potential of transistor 2 so that transistor 2 ³⁵ turns on and transistor 10 turns off. This brings the pulse shaper to its initial state when transistor 2 is open and transistors 1 and 10 closed. In turn, the potential of the sampling bus of memory elements 6 decreases to the value and _ww =.

In the proposed device rnp transistor 1 plays an auxiliary role and its relatively low speed does not affect the rate of increase of the potential of the sampling bus 6.

The increase in speed of the shaper is achieved without increasing the power consumption.

Claims (3)

The invention is related to computer technology and can be used in storage devices. The address formers of sampling pulses to a memory element are known. In each of them, at the output, a positive voltage pulse is generated with an output, which allows selecting the necessary memory element in the accumulator matrix. However, the known devices have low reliability. The aim of the invention is to increase the reliability of the former without increasing the power consumption. It is achieved by introducing into the device an additional ti-pn transistor, the base of which is connected to the collector ..l transistor, the emitter to the sample bus, the collector to the base of the pnp transiotor, and the base of the pnp transistor is divided by input bus. The pulse shaper of a sample of memory contains a transistor "f 1 n pp transistor 2, resistors 3,4, It 5, bus 6, sampling of memory elements,. sampling current generator 7, source 8 pitash1, successively onOJe bias diodes 9; additional, npp transistor 10. In the mode, the quiescent current of the current generator of sample 7 is zero. Suppose that transistor 2 is open, and ppP transistor Yu is closed. Then, due to the collector current of transistor 2 due to the current of sample bus 6 Iui6,, f5a, the resistor 5 creates a voltage drop and the base-emitter voltage of the additional pn-p transistor 10 is less than the base-eqitter transistor 2. Since the transistor 10 is closed, then the p-Pr transistor 1 is also closed. The bus potential of sample 6 is defined as u: E: n-2Vu ,,, - i ,, - R ,. where Ef is the power supply voltage 81 2 U.- voltage drop across the bias diodes 9; - voltage drop at the base-emitter junction of an open transistor 2; Tg is the base current of transistor 2; TH - the resistance of the resistor 4. At the time of sampling, the current generator of sample 7 is turned on and its current lowers the potential of the base of transistor 2. It turns on with a transistor (Yu and transistor 1. While the current generator of sample 7 is turned on, the collector current of transistor 1 is not enough to increase the potential of transistor 2 therefore it remains closed. In this state, the potential of the selection of the memory elements 6 is defined as the voltage of the transistor O of the base of the transistor 1O and the voltage drop across the junction of the bay-emitter of the open transistor O. We and ShV P PLEASE increase the potential of the bus 6 sampling. After I turn off the sample current generator 7, the base potential of transistor 2 starts to increase. Since pnp transistor 1 is more inoperative than n pf) transistors 2 and then its collector current increases the base potential of transistor 2 so that transistors 2 turn on and transistor 10 turns off. This causes the pulse shaper to be in the initial state when transistor 2 is open and transistors 1 and 10 are closed . In turn, the potential of the memory bus 6 selection is reduced to a value. and In the proposed device, the pnp transistor 1 plays an auxiliary role and its relatively low speed does not affect the rate of increase of the potential of the sample bus 6. The increase in the speed of the driver is achieved without an increase in consumption. power consumption. The invention The pulse shaper of a sample of memory elements containing a pp transistor, the base of which is connected to a power bus through a first resistor and emitter, a pp transient transducer, the base of which is connected to a collector of a pn transistor and the connected second resistor and bias diodes to the power bus, the collector through the third resistor is connected to the power bus, and the emitter to the bus, the sample, and the input bus, characterized in that, in order to increase reliability, it contains an additional ppn transistor, Kotor base connected to the collector of n-p-n transistor, the emitter to the bus sample collector to the base of p-n-p transistor and the base of n-p-n transistor is connected to the input bus. The sources of information taken into account in the examination 1.Patent of France No. 2112364, cl. Q 11 11/00, 1972. 2. US patent N9 3624620, cl. 340-173, 1972. 3. Electronics, No. 9, 1974.  I ten / Lx