SU722509A3 - Поверхностный лазер - Google Patents
Поверхностный лазер Download PDFInfo
- Publication number
- SU722509A3 SU722509A3 SU752103057A SU2103057A SU722509A3 SU 722509 A3 SU722509 A3 SU 722509A3 SU 752103057 A SU752103057 A SU 752103057A SU 2103057 A SU2103057 A SU 2103057A SU 722509 A3 SU722509 A3 SU 722509A3
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- substrate
- laser
- laser radiation
- insulating layer
- gaas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000005086 pumping Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 229910000846 In alloy Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43446974A | 1974-01-18 | 1974-01-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU722509A3 true SU722509A3 (ru) | 1980-03-15 |
Family
ID=23724371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU752103057A SU722509A3 (ru) | 1974-01-18 | 1975-01-17 | Поверхностный лазер |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JPS5845196B2 (enExample) |
| DE (1) | DE2501782A1 (enExample) |
| FR (1) | FR2258724A1 (enExample) |
| SU (1) | SU722509A3 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2337449A1 (fr) * | 1975-12-29 | 1977-07-29 | Tokyo Inst Tech | Circuit optique integre du type a guide d'ondes a structures multiples heterogenes et son procede de fabrication |
| JPS61166193A (ja) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | 光集積回路 |
| JP2020513716A (ja) * | 2016-11-10 | 2020-05-14 | コプシス・ソチエタ・ア・レスポンサビリタ・リミタータＱＯｐＳｙＳ Ｓ．ｒ．ｌ． | フォトニック共振モータ |
| DE102021004609A1 (de) | 2021-09-11 | 2023-03-16 | Eques Consulting GmbH | Vorrichtung und damit durchführbares Verfahren zur non-invasiven Konzentrationsbestimmung von Komponenten im menschlichen Blutkreislauf und Verwendung des Verfahrens. |
| CN114552371B (zh) * | 2022-02-23 | 2024-07-19 | 安徽格恩半导体有限公司 | 一种GaN基的激光二极管结构及制造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS529358B2 (enExample) * | 1972-01-25 | 1977-03-15 |
-
1975
- 1975-01-17 SU SU752103057A patent/SU722509A3/ru active
- 1975-01-17 JP JP50007694A patent/JPS5845196B2/ja not_active Expired
- 1975-01-17 DE DE19752501782 patent/DE2501782A1/de not_active Withdrawn
- 1975-01-20 FR FR7501674A patent/FR2258724A1/fr active Granted
-
1983
- 1983-05-31 JP JP9686683A patent/JPS58218188A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2258724A1 (en) | 1975-08-18 |
| JPS58218188A (ja) | 1983-12-19 |
| JPS5845196B2 (ja) | 1983-10-07 |
| DE2501782A1 (de) | 1975-10-30 |
| JPS50105081A (enExample) | 1975-08-19 |
| FR2258724B1 (enExample) | 1981-09-25 |
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