SU629428A1 - Device for catalyst oxidizing of metals and semiconductors - Google Patents
Device for catalyst oxidizing of metals and semiconductorsInfo
- Publication number
- SU629428A1 SU629428A1 SU772484849A SU2484849A SU629428A1 SU 629428 A1 SU629428 A1 SU 629428A1 SU 772484849 A SU772484849 A SU 772484849A SU 2484849 A SU2484849 A SU 2484849A SU 629428 A1 SU629428 A1 SU 629428A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- semiconductors
- metals
- catalyst oxidizing
- catalyst
- furnace
- Prior art date
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- Physical Or Chemical Processes And Apparatus (AREA)
Description
что пары мышь ка, образующиес при тер .мическом разложении образцов 14 арсенида галли , не удал ютс за пределы используемой печи, а конденсируютс на внутренней поверхности стекл нного колпака 8. Конденсаци мышь ка обусловлена тем, что стекл нный колпак имеет более низкую температуру , чем нагревательный элемент и окисл емый образец.that pairs of mice formed during the thermal decomposition of samples 14 of gallium arsenide are not removed beyond the limits of the furnace used, but are condensed on the inner surface of the glass cap 8. The mouse condensation is caused by the fact that the glass cap has a lower temperature than heating element and oxidizable sample.
Коэффициент полезного использовани подаваемой на печь электроэнергии достаточно велик (60-80°/о), поскольку, кроме образцов и катализатора, другие элементы печи не подвергаютс специальному нагреву, а теплоотвод от нагревательного элемента 7 по стойкам 6 и за счет теплового излучени при температурах до 700°С невысок.The efficiency of the electric power supplied to the furnace is sufficiently large (60-80 ° / o), since, in addition to the samples and the catalyst, the other elements of the furnace are not subjected to special heating, and the heat sink from the heating element 7 is through racks 6 and due to heat 700 ° C is low.
При использовании предлагаемого устройства упрош,аетс конструкци печи дл термического окислени металлов и полупроводников; обеспечиваетс возможность проведени окислени при низких температурах и увеличиваетс коэффициент полезного использовани подаваемой на печь электроэнергии; обеспечиваетс равномерное перемешивание газа в реакционной зоне; достигаетс безопасность при работе с окисл емым веществом.Using the proposed device, the furnace structure for the thermal oxidation of metals and semiconductors is simplified; it is possible to carry out the oxidation at low temperatures and increase the efficiency of the power supplied to the furnace; gas is uniformly mixed in the reaction zone; Safety is achieved when working with an oxidizable substance.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772484849A SU629428A1 (en) | 1977-04-20 | 1977-04-20 | Device for catalyst oxidizing of metals and semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772484849A SU629428A1 (en) | 1977-04-20 | 1977-04-20 | Device for catalyst oxidizing of metals and semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU629428A1 true SU629428A1 (en) | 1978-10-25 |
Family
ID=20708523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU772484849A SU629428A1 (en) | 1977-04-20 | 1977-04-20 | Device for catalyst oxidizing of metals and semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU629428A1 (en) |
-
1977
- 1977-04-20 SU SU772484849A patent/SU629428A1/en active
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