SU453703A1 - - Google Patents

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Publication number
SU453703A1
SU453703A1 SU1877573A SU1877573A SU453703A1 SU 453703 A1 SU453703 A1 SU 453703A1 SU 1877573 A SU1877573 A SU 1877573A SU 1877573 A SU1877573 A SU 1877573A SU 453703 A1 SU453703 A1 SU 453703A1
Authority
SU
USSR - Soviet Union
Prior art keywords
source
transistor
input
drain
dynamic range
Prior art date
Application number
SU1877573A
Other languages
Russian (ru)
Inventor
бретеи пзс
Original Assignee
И. П. боконь
Киевский ордена Ленина политехнический институт имени лети Великой Окт брьской социалистической революции
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by И. П. боконь, Киевский ордена Ленина политехнический институт имени лети Великой Окт брьской социалистической революции filed Critical И. П. боконь
Priority to SU1877573A priority Critical patent/SU453703A1/ru
Application granted granted Critical
Publication of SU453703A1 publication Critical patent/SU453703A1/ru

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Description

(54) УСТРОЙСТВО ДЛЯ УМНОЖЕНИЯ НАПРЯЖЕНИЙ(54) DEVICE FOR MULTIPLICATION OF STRESSES

ходе устройства определ етс  произведением входных сигналов.the course of the device is determined by the product of the input signals.

Благодар  нротнвофазностн ианр жеши на стоке и истоке нолевого транзистора 5, его проводимость оказываетс  линейной дл  иапр жеин  источинка снгиала 2. Это повышает точность перемножени  н расшир ет динамическпй диапазон сигналов, оиредел емый, с одной стороиы, уровие шумов, а с другой - допустимыми иогрешност ми иеремиожени .Due to the nanotube phase signal on the drain and the source of the null transistor 5, its conductivity is linear for the source of the sensor 2. This increases the multiplication accuracy and expands the dynamic range of signals, which, on the one hand, reduces the noise level, and on the other hand, the level and the world.

Предмет и з о б р е т е и и  Subject and d on and e and

Устройство дл  умножени  иаир жений, содержаи1 ,ее усилитель на бгпюл рном траизисторе п полевой транзистор, затвор которого соединен с одним из источников входных сигналов , а сток подключен к эмиттеру бипол рного транзистора, н второй источник входного сигиала, отличающеес  тем, что, с целью расширени  динамического диапазона и повышени  точностн иеремножеин , оно содержит иарафазный усилитель, вход которого соединен со вторым источн и ом входного сигнала, а выходы соответственно подключены к базе бииол риого транзистора и истоку иолевого транзистора.A device for multiplying circuits, containing its amplifier on a pulsary trap, is a field effect transistor, the gate of which is connected to one of the input sources, and the drain is connected to the emitter of the bipolar transistor, and the second input source, different in that expanding the dynamic range and improving accuracy of the receiver; it contains a phase amplifier, the input of which is connected to the second input source and signal, and the outputs are respectively connected to the base of the biologic transistor and the source and the left transistor.

II

3-13-1

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СмещениеBias

SU1877573A 1973-01-15 1973-01-15 SU453703A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1877573A SU453703A1 (en) 1973-01-15 1973-01-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1877573A SU453703A1 (en) 1973-01-15 1973-01-15

Publications (1)

Publication Number Publication Date
SU453703A1 true SU453703A1 (en) 1974-12-15

Family

ID=20540861

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1877573A SU453703A1 (en) 1973-01-15 1973-01-15

Country Status (1)

Country Link
SU (1) SU453703A1 (en)

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