SU382671A1 - METHOD OF FILLING GAS ACCESSED CAPACITIES WITH SOLVENTS - Google Patents
METHOD OF FILLING GAS ACCESSED CAPACITIES WITH SOLVENTSInfo
- Publication number
- SU382671A1 SU382671A1 SU1635742A SU1635742A SU382671A1 SU 382671 A1 SU382671 A1 SU 382671A1 SU 1635742 A SU1635742 A SU 1635742A SU 1635742 A SU1635742 A SU 1635742A SU 382671 A1 SU382671 A1 SU 382671A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- capacities
- solvents
- filling gas
- acetylene
- gas accessed
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C5/00—Methods or apparatus for filling containers with liquefied, solidified, or compressed gases under pressures
- F17C5/06—Methods or apparatus for filling containers with liquefied, solidified, or compressed gases under pressures for filling with compressed gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2221/00—Handled fluid, in particular type of fluid
- F17C2221/01—Pure fluids
- F17C2221/018—Acetylene
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Description
1one
Изобретение относитс к способам хранени ацетилена в баллонах других емкост х.This invention relates to methods for storing acetylene in cylinders of other containers.
Известен onocOi6 .наполнени газообразным ацетиленом непосредственно от генераторов баллонов и Д1ругих емкостей, охлажденных до отрицательных температур, с последующим отогревом дл повышени в них давлени . Однако Бследст:вие незначительното давлени ацетилена в генераторах растворение его в ацетоне, которым пропитана пориста масса баллонов, протекает медленней, чем при подаче в них ацетилена от компрессоров.OnocOi6 is known. It is filled with acetylene gas directly from cylinder generators and other containers cooled to negative temperatures, followed by heating to increase the pressure in them. However, the insignificant pressure of acetylene in the generators dissolves it in acetone, which the porous mass of cylinders is impregnated with, is slower than with the supply of acetylene to them from compressors.
С целью интенсификации процесса, предлагаетс e,м кocти охлаждать до температурыIn order to intensify the process, it is proposed to cool e to the temperature
конденсации ацетилена, а ацетилен подавать под равновесным давлением.acetylene condensation, and acetylene to serve under equilibrium pressure.
П р е д LM е т изобретени P rede LM et inventions
Способ наполнени газообразным ацетиленом ем.костей с растворител ми путем охлаждени их до отрицательных температур и последующего подолрева до температуры окружающей среды, отличающийс тем, что, с целью интенсификации процесса, емкости охлаждают до тем1пературы конденсации ацетилена, а ацетилен подают под равновесным давлением.The method of filling acetylene gas with solvent tanks by cooling them to negative temperatures and subsequent heating to ambient temperature, characterized in that, in order to intensify the process, the tank is cooled to the acetylene condensation temperature and acetylene is supplied under equilibrium pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1635742A SU382671A1 (en) | 1971-03-25 | 1971-03-25 | METHOD OF FILLING GAS ACCESSED CAPACITIES WITH SOLVENTS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1635742A SU382671A1 (en) | 1971-03-25 | 1971-03-25 | METHOD OF FILLING GAS ACCESSED CAPACITIES WITH SOLVENTS |
Publications (1)
Publication Number | Publication Date |
---|---|
SU382671A1 true SU382671A1 (en) | 1973-05-25 |
Family
ID=20469386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU1635742A SU382671A1 (en) | 1971-03-25 | 1971-03-25 | METHOD OF FILLING GAS ACCESSED CAPACITIES WITH SOLVENTS |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU382671A1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100297853A1 (en) * | 2008-06-04 | 2010-11-25 | Novellus | Method for purifying acetylene gas for use in semiconductor processes |
US8435608B1 (en) | 2008-06-27 | 2013-05-07 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
US8563414B1 (en) | 2010-04-23 | 2013-10-22 | Novellus Systems, Inc. | Methods for forming conductive carbon films by PECVD |
US8664124B2 (en) | 2005-10-31 | 2014-03-04 | Novellus Systems, Inc. | Method for etching organic hardmasks |
US8669181B1 (en) | 2007-02-22 | 2014-03-11 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
US9023731B2 (en) | 2012-05-18 | 2015-05-05 | Novellus Systems, Inc. | Carbon deposition-etch-ash gap fill process |
US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
US9320387B2 (en) | 2013-09-30 | 2016-04-26 | Lam Research Corporation | Sulfur doped carbon hard masks |
US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
US11837441B2 (en) | 2019-05-29 | 2023-12-05 | Lam Research Corporation | Depositing a carbon hardmask by high power pulsed low frequency RF |
-
1971
- 1971-03-25 SU SU1635742A patent/SU382671A1/en active
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8664124B2 (en) | 2005-10-31 | 2014-03-04 | Novellus Systems, Inc. | Method for etching organic hardmasks |
US8669181B1 (en) | 2007-02-22 | 2014-03-11 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
US8309473B2 (en) * | 2008-06-04 | 2012-11-13 | Novellus Systems, Inc. | Method for purifying acetylene gas for use in semiconductor processes |
US20100297853A1 (en) * | 2008-06-04 | 2010-11-25 | Novellus | Method for purifying acetylene gas for use in semiconductor processes |
US9240320B1 (en) | 2008-06-27 | 2016-01-19 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
US8435608B1 (en) | 2008-06-27 | 2013-05-07 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
US8563414B1 (en) | 2010-04-23 | 2013-10-22 | Novellus Systems, Inc. | Methods for forming conductive carbon films by PECVD |
US9023731B2 (en) | 2012-05-18 | 2015-05-05 | Novellus Systems, Inc. | Carbon deposition-etch-ash gap fill process |
US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
US10192759B2 (en) | 2012-12-14 | 2019-01-29 | Lam Research Corporation | Image reversal with AHM gap fill for multiple patterning |
US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
US9618846B2 (en) | 2013-02-25 | 2017-04-11 | Lam Research Corporation | PECVD films for EUV lithography |
US9320387B2 (en) | 2013-09-30 | 2016-04-26 | Lam Research Corporation | Sulfur doped carbon hard masks |
US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
US11837441B2 (en) | 2019-05-29 | 2023-12-05 | Lam Research Corporation | Depositing a carbon hardmask by high power pulsed low frequency RF |
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