SU332578A1 - REVERSIBLE INVERTING REGISTRY. VOGOLYUZNAYA ^^^^ • ^ • Ш1штт ^ '' B Lis Lis TETKA - Google Patents

Description

The invention relates to the field of pulsed technology, namely, reversible inverting registers, and can be used in computing equipment devices, in particular, in K-valued logic, automation and instrument engineering circuits.

Known schemes registers built on ferrite-transistor cells with diodes or without diodes.

However, the use of diodes or reduces the reliability of the device and the load capacity of the cells, or requires a large number of ferrite-transistor cells.

The purpose of the invention is to simplify the register and increase its reliability.

This goal is achieved by using a push-pull shift register, supplemented by four cells to control the direction of advancement of information, with the collector circuit, each storage cell connected to the record windings of the previous and next cells and the emitters of the corresponding control cells, which write windings are connected to the shift direction buses . The read windings of the storing and control cells are connected to the respective constant bars.,

The circuit is based on a push-pull shift register, made on cells 1, 2 ... K, in whose collector circuits of the transistors the windings are connected in series

records of two adjacent cells. The outputs of the write cell windings I, 2 ... K, which ensure the promotion of information to the right, are combined into two groups of even and odd cells. Groups of even and odd cells are included

in the emitter circuit of the transistors of the control cells, K + 3 and / (+ 4, respectively. Likewise, the outputs of the windings are lowering, providing information to the left, are combined into two groups, even and odd, and included

into emitter values of K + 1 and / C + 2 control cell transistors. The reading windings of the odd-numbered cells 1, 3, 5, ... K + 1, / (+ 3 are connected in a series circuit, to the input of which pulses are continuously applied in the cycle t.

Similarly, to the input of a circuit obtained by connecting in series the windings of reading even cells 2, 4 ,. .. / (+ 2, / C + 4, pulses are constantly applied in the tj-2 cycle. The write cell windings / C + 2 and / (+ 4 are included in the collector circuits of the transistors K and / C- | -3 , and the write cell windings K. and / C- | -3 are included in the collector values of the cell transistors / Cf-2 and I + 4, respectively. To the input of the write cell winding QC-3, cheni cell, once in the t + 3 cycle, a control impulse to move the information to the right, and the input of the recording cell's winding K + 1, connected in series with the cell blanking coil / C + 3, 5, in the t + 1 cycle, a control pulse is applied once The information operates to the left. The device works as follows: A control pulse is sent to the input of the cell recording winding K -} - 3. Once in the i + 3rd cycle, a control pulse is written, recording a "unit into the cell / C + 3 and dying "Unit in the K + 1 cell. With the arrival of pulses in the i-th and i + 2 clock cycles, the unit will be written from the cell / C + 3 into the cell +4 and back. With 15 pulses being applied in the i and ifS pulses, the transistors will open cells / С + 3 and / С + 4, respectively, which will enable the information to the entry winding of cell 1 to move to the right. Similarly, 20 feed control pulse in the i + 1-th cycle with the arrival of pulses in the i-th and i + 2-nd cycles will provide alternate opening of the transistors of the K + 1 and K-i-2 cells, which will allow the information to move to the left. The direct or inverse value of the variable, depending on the direction of information advancement, is output from the cell output. The subject of the invention is a reverse inverting register made on the storage and control magneto-transistor cells, characterized in that, in order to simplify the register and increase its reliability, the collector circuit of each memory cell is connected to the windings of the previous record and the next cells and emitters of the corresponding control cells the cells whose recording windings are connected to the shear directions, and the read windings of the memory and control cells are connected to the corresponding constant cycles.

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