SU254869A1 - - Google Patents

Info

Publication number
SU254869A1
SU254869A1 SU1170878A SU1170878A SU254869A1 SU 254869 A1 SU254869 A1 SU 254869A1 SU 1170878 A SU1170878 A SU 1170878A SU 1170878 A SU1170878 A SU 1170878A SU 254869 A1 SU254869 A1 SU 254869A1
Authority
SU
USSR - Soviet Union
Prior art keywords
energy
impurities
spectrum
ionization
amount
Prior art date
Application number
SU1170878A
Other languages
English (en)
Russian (ru)
Publication of SU254869A1 publication Critical patent/SU254869A1/ru

Links

SU1170878A SU254869A1 (enrdf_load_stackoverflow)

Publications (1)

Publication Number Publication Date
SU254869A1 true SU254869A1 (enrdf_load_stackoverflow)

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492871A (en) * 1981-10-07 1985-01-08 Agency Of Industrial Science & Technology Method for determining impurities in epitaxial silicon crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492871A (en) * 1981-10-07 1985-01-08 Agency Of Industrial Science & Technology Method for determining impurities in epitaxial silicon crystals

Similar Documents

Publication Publication Date Title
Ducruet et al. Thermoluminescence: experimental
SU254869A1 (enrdf_load_stackoverflow)
CN103712782A (zh) 一种深紫外光学元件光学性能的综合测试方法
KR910003778A (ko) 실리콘 결정 평가 방법과 반도체 장치 제조방법
EP2577274A1 (en) A method for measuring bulk impurities of semiconductor materials using edge - on photoluminescence
CN113884462A (zh) 一种氮掺杂单晶硅中氮元素的测量方法及系统
JP4633549B2 (ja) フォトルミネッセンスマッピング測定装置
CN206696183U (zh) 基于变温拉曼技术的有机物高效无损检测装置
US10317338B2 (en) Method and assembly for determining the carbon content in silicon
Finck et al. Variation with Pressure of the Boiling Points of Naphthalene, Benzophenone and ANTHRACENE1
Hieckmann et al. Comprehensive characterization of extended defects in semiconductor materials by a scanning electron microscope
Berman et al. Evaluation of four imaging techniques for the electrical characterization of solar cells
Lai et al. Image analysis of PV module electroluminescence
JPS59184539A (ja) 半導体結晶の転位密度測定方法
Guillemoles Looking at Photovoltaic Devices with new Eyes
Gonzalez et al. Stress effects on HgI 2 optical properties
RU2432569C2 (ru) Способ экспрессного обнаружения высококачественного кварцевого сырья
Jiang et al. Defects detection in crystalline silicon solar cells based on electroluminescence imaging
Glunz et al. Comparison of spatially resolved carrier lifetimes in mc-Si with solar cell and material characteristics
Habenicht et al. Photoluminescence imaging of chromium in crystalline silicon
Kalinushkin et al. Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials
Furstenberg et al. Photoluminescence study of the 1.3–1.55 eV defect band in CdTe
SU1043578A1 (ru) Способ поисков месторождений полезных ископаемых
JPS6312533B2 (enrdf_load_stackoverflow)
Glunz et al. Lifetime and Material Characteristics of Multicrystalline Silicon Measured with High Spatial Resolution