SU191981A1 - METHOD OF IDENTIFICATION OF INHEMITIES - Google Patents
METHOD OF IDENTIFICATION OF INHEMITIESInfo
- Publication number
- SU191981A1 SU191981A1 SU1013098A SU1013098A SU191981A1 SU 191981 A1 SU191981 A1 SU 191981A1 SU 1013098 A SU1013098 A SU 1013098A SU 1013098 A SU1013098 A SU 1013098A SU 191981 A1 SU191981 A1 SU 191981A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- inhemities
- identification
- etching
- water
- saturated
- Prior art date
Links
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- QDHHCQZDFGDHMP-UHFFFAOYSA-N monochloramine Chemical compound ClN QDHHCQZDFGDHMP-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N Gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Description
Способ вы влени неоднородностей в распределении примесей в монокристаллах полупроводников путем анодного травлени известен .The method of detecting inhomogeneities in the distribution of impurities in single crystals of semiconductors by anodic etching is known.
Особенностью предложенного способа вл етс то, что травление осуществл ют в электролите, состо щем из насыщенного хлористым аммонием раствора одного объема концентрированной сол ной кислоты в трех объемах воды в течение 8-10 мин при плотности тока 180-220 а/см. Это дает возможность вы вить неоднородности в распределении примесей в кристаллах антимонида галли .A feature of the proposed method is that the etching is carried out in an electrolyte consisting of a solution of one volume of concentrated hydrochloric acid in three volumes of water saturated with ammonium chloride for 8-10 minutes at a current density of 180-220 A / cm. This makes it possible to reveal inhomogeneities in the distribution of impurities in gallium antimonide crystals.
По онисьшаемому способу травлению подвергали монокристаллы антимонида галли , ограниченные плоскими поверхност ми, или образцы, шлифованные окисью алюмини . Исследуемый образец и нластинку из тантала, служащую катодом, погружали в электролит,By this method, single crystals of gallium antimonide bounded by flat surfaces or samples ground with alumina were subjected to etching. The sample and the tantalum plate that serves as the cathode were immersed in the electrolyte,
представл ющий собой насыщенный хлористым аммонием раствор одного объема концентрированной сол ной кислоты в трех объемах воды. Травление производили при плотности тока 180-220 ма/слс в течение 810 мин при комнатной температуре, после чего образцы промывали водой.which is a solution of one volume of concentrated hydrochloric acid saturated with ammonium chloride in three volumes of water. Etching was performed at a current density of 180-220 mA / ss for 810 min at room temperature, after which the samples were washed with water.
Предмет изобретени Subject invention
Способ вы влени неоднородностей в распределении примесей в монокристаллах полупроводников путем анодного травлени , отличающийс тем, что, с целью определени неоднородностей в кристаллах антимонидаThe method for detecting inhomogeneities in the distribution of impurities in single crystals of semiconductors by anodic etching, characterized in that, in order to determine inhomogeneities in antimonide crystals
галли , образцы антимоцида галли нодвергают травлению в насыщенном хлористым аммонием растворе одного объема концентрированной сол ной кислоты в трех объемах воды в течение 8-10 мин нри плотности тока 180-220 лш/слг2.gallium, gallium antimocide samples are etched in a saturated solution of one volume of concentrated hydrochloric acid in three volumes of water for 8–10 min in ammonium chloride saturated at a current density of 180–220 lsh / sl2.
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU904833057A Addition SU1722689A2 (en) | 1990-05-30 | 1990-05-30 | Device for molding powder articles by rolling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU191981A1 true SU191981A1 (en) |
Family
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2628815C1 (en) * | 2016-06-01 | 2017-08-22 | федеральное государственное автономное образовательное учреждение высшего образования "Самарский национальный исследовательский университет имени академика С.П. Королева" | Method of quantitative estimating grain structure inhomogeneity of sheet metal materials |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2628815C1 (en) * | 2016-06-01 | 2017-08-22 | федеральное государственное автономное образовательное учреждение высшего образования "Самарский национальный исследовательский университет имени академика С.П. Королева" | Method of quantitative estimating grain structure inhomogeneity of sheet metal materials |
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