SU1545845A1 - METHOD OF OBTAINING STRUCTURE "SILICA ON INSULATOR" - Google Patents
METHOD OF OBTAINING STRUCTURE "SILICA ON INSULATOR"Info
- Publication number
- SU1545845A1 SU1545845A1 SU4448613/25A SU4448613A SU1545845A1 SU 1545845 A1 SU1545845 A1 SU 1545845A1 SU 4448613/25 A SU4448613/25 A SU 4448613/25A SU 4448613 A SU4448613 A SU 4448613A SU 1545845 A1 SU1545845 A1 SU 1545845A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- silicon
- implanted
- insulator
- silica
- silicon substrate
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Способ получения структуры "кремний на изоляторе", включающий имплантацию в кремниевую подложку ионов кислорода (азота) с дозами и энергиями, достаточными для образования изолирующего слоя двуокиси кремния (нитрида кремния) под слоем кремния, и нагрев, отличающийся тем, что, с целью улучшения качества структуры, имплантацию и нагрев проводят в два этапа: на первом этапе имплантируют часть поверхности кремниевой подложки так, чтобы имплантируемые области чередовались с неимплантированными, и проводят нагрев, а на втором имплантируют только неиплантированную на первом этапе поверхность кремниевой подложки и проводят нагрев.The method of obtaining the structure of "silicon on the insulator", including the implantation into the silicon substrate of oxygen ions (nitrogen) with doses and energies sufficient to form an insulating layer of silicon dioxide (silicon nitride) under a layer of silicon, and heating, characterized in that, in order to improve The quality of the structure, implantation and heating are carried out in two stages: in the first stage, a portion of the surface of the silicon substrate is implanted so that the implantable areas alternate with the non-implanted, and they are heated, and the second is implanted About the surface of the silicon substrate, which is not implanted at the first stage, is heated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU4448613/25A SU1545845A1 (en) | 1988-06-27 | 1988-06-27 | METHOD OF OBTAINING STRUCTURE "SILICA ON INSULATOR" |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU4448613/25A SU1545845A1 (en) | 1988-06-27 | 1988-06-27 | METHOD OF OBTAINING STRUCTURE "SILICA ON INSULATOR" |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU1545845A1 true SU1545845A1 (en) | 1999-11-10 |
Family
ID=60529017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU4448613/25A SU1545845A1 (en) | 1988-06-27 | 1988-06-27 | METHOD OF OBTAINING STRUCTURE "SILICA ON INSULATOR" |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU1545845A1 (en) |
-
1988
- 1988-06-27 SU SU4448613/25A patent/SU1545845A1/en active
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